Extrinsic and intrinsic contributions to the spin Hall effect of alloys

Momentum-Space Spin Antivortex and Spin Transport in Monolayer Pb

Nontrivial momentum-space spin texture of electrons can be induced by spin-orbit coupling and underpins various spin transport phenomena, such as current-induced spin polarization and the spin Hall effect. In this work, we find a nontrivial spin texture, spin antivortex, can appear at certain momenta on the Γ-K line in a 2D monolayer Pb on top of SiC. Different from spin vortex due to the band degeneracy in the Rashba model, the existence of this spin antivortex is guaranteed by the Poincaré-Hopf theorem and thus topologically stable. Accompanied with this spin antivortex, a Lifshitz transition of Fermi surfaces occurs at certain momenta on the K-M line, and both phenomena are originated from the anticrossing between the j=1/2 and j=3/2 bands. A rapid variation of the response coefficients for both the current-induced spin polarization and spin Hall conductivity is found when the Fermi energy is tuned around the spin antivortex. Our work demonstrates the monolayer Pb as a potentially appealing platform for spintronic applications.

Seebeck effect in nanomagnets

We present a theory of the Seebeck effect in nanomagnets with dimensions smaller than the spin diffusion length, showing that the spin accumulation generated by a temperature gradient strongly affects the thermopower. We also identify a correction arising from the transverse temperature gradient induced by the anomalous Ettingshausen effect and an induced spin-heat accumulation gradient. The relevance of these effects for nanoscale magnets is illustrated byab initiocalculations on dilute magnetic alloys.

Thermal behavior of spin-current generation in PtxCu1-x devices characterized through spin-torque ferromagnetic resonance

High temperature studies of spin Hall effect have often been neglected despite its profound significance in real-world devices. In this work, high temperature spin torque ferromagnetic resonance measurement was performed to evaluate the effects of temperature on the Gilbert damping and spin Hall efficiency of Pt_xCu_1−x. When the temperature was varied from 300 K to 407 K, the Gilbert damping was relatively stable with a change of 4% at composition x = 66%. Alloying Pt and Cu improved the spin Hall efficiency of Pt₇₅Cu₂₅/Co/Ta by 29% to a value of 0.31 ± 0.03 at 407 K. However, the critical switching current density is dependent on the ratio between the Gilbert damping and spin Hall efficiency and the smallest value was observed when x = 47%. It was found that at this concentration, the spin transparency was at its highest at 0.85 ± 0.09 hence indicating the importance of interfacial transparency for energy efficient devices at elevated temperature.

Defect-implantation for the all-electrical detection of non-collinear spin-textures

The viability of past, current and future devices for information technology hinges on their sensitivity to the presence of impurities. The latter can reshape extrinsic Hall effects or the efficiency of magnetoresistance effects, essential for spintronics, and lead to resistivity anomalies, the so-called Kondo effect. Here, we demonstrate that atomic defects enable highly efficient all-electrical detection of spin-swirling textures, in particular magnetic skyrmions, which are promising bit candidates in future spintronics devices. The concomitant impurity-driven alteration of the electronic structure and magnetic non-collinearity gives rise to a new spin-mixing magnetoresistance (XMR_defect). Taking advantage of the impurities-induced amplification of the bare transport signal, which depends on their chemical nature, a defect-enhanced XMR (DXMR) is proposed. Both XMR modes are systematised for 3d and 4d transition metal defects implanted at the vicinity of skyrmions generated in PdFe bilayer deposited on Ir(111). The ineluctability of impurities in devices promotes the implementation of defect-enabled XMR modes in reading architectures with immediate implications in magnetic storage technologies.

Precise detection of magnetic skyrmions is a key prerequisite to exploit them in future magnetic storage technologies. The authors, using first principles studies, propose two novel spin-mixing magnetoresistance effects enabled by defects, which allow for a highly efficient all-electrical detection of spin-swirling textures.

Absence of strong skew scattering in crystals with multi-sheeted Fermi surfaces

We consider an extrinsic contribution to the anomalous and spin Hall effect in dilute alloys based on Fe, Co, Ni, and Pt hosts with different substitutional impurities. It is shown that a strong skew-scattering mechanism is absent in such crystals with multi-sheeted Fermi surfaces. Based on this finding, we conclude on the mutual exclusion of strong intrinsic and skew-scattering contributions to the considered transport phenomena. It also allows us to draw general conclusions in which materials with a giant anomalous Hall effect caused by the skew scattering can be achieved.

Tuning Spin Hall Angles by Alloying

Within a combined experimental and theoretical study it is shown that the spin Hall angle of a substitutional alloy system can be continuously varied via its composition. For the alloy system Au_{x}Pt_{1-x} a substantial increase of the maximum spin Hall angle compared to the pure alloy partners could be achieved this way. The experimental findings for the longitudinal charge conductivity σ, the transverse spin Hall conductivity σ_{SH}, and the spin Hall angle α_{SH} could be confirmed by calculations based on Kubo's linear response formalism. Calculations of these response quantities for different temperatures show that the divergent behavior of σ and σ_{SH} is rapidly suppressed with increasing temperature. As a consequence, σ_{SH} is dominated at higher temperatures by its intrinsic contribution that has only a rather weak temperature dependence.

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Giant Room Temperature Interface Spin Hall and Inverse Spin Hall Effects

The spin Hall angle (SHA) is a measure of the efficiency with which a transverse spin current is generated from a charge current by the spin-orbit coupling and disorder in the spin Hall effect (SHE). In a study of the SHE for a Pt|Py (Py=Ni_{80}Fe_{20}) bilayer using a first-principles scattering approach, we find a SHA that increases monotonically with temperature and is proportional to the resistivity for bulk Pt. By decomposing the room temperature SHE and inverse SHE currents into bulk and interface terms, we discover a giant interface SHA that dominates the total inverse SHE current with potentially major consequences for applications.

Tunable giant spin hall conductivities in a strong spin-orbit semimetal: Bi(1-x) Sb(x)

Intrinsic spin Hall conductivities are calculated for strong spin-orbit Bi(1-x)Sb(x) semimetals, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 (ℏ/e)(Ω  cm)^{-1} for bismuth to 96 (ℏ/e)(Ω  cm)^{-1} for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi(0.83)Sb(0.17). The spin Hall conductivity could be changed by a factor of 5 for doped Bi, or for Bi(0.83)Sb(0.17), by changing the chemical potential by 0.5 eV, suggesting the potential for doping or voltage tuned spin Hall current.

Validity of the relativistic phase shift model for the extrinsic spin Hall effect in dilute metal alloys

Recently, a generalized relativistic phase shift model was proposed (Fedorovet al 2013 Phys. Rev. B 88 085116) for the description of the skew-scattering contribution to the spin Hall effect caused by impurities. Here, we inspect this model by means of a systematic comparison with the results of first-principles calculations performed for several metallic host systems with different substitutional impurities. It is found that for its proper application, the differences between impurity and host phase shifts should be used as input parameters. Generally, the model provides good qualitative agreement with ab initio results for hosts with a free-electron-like Fermi surface and a relatively weak spin-orbit coupling, but fails otherwise.

Anisotropy of spin relaxation and transverse transport in metals

Using first-principles methods we explore the anisotropy of the spin relaxation and transverse transport properties in bulk metals with respect to the real-space direction of the spin-quantization axis in paramagnets or of the spontaneous magnetization in ferromagnets. Owing to the presence of the spin-orbit coupling the orbital and spin character of the Bloch states depends sensitively on the orientation of the spins relative to the crystal axes. This leads to drastic changes in quantities which rely on interband mixing induced by the spin-orbit interaction. The anisotropy is particularly striking for quantities which exhibit spiky and irregular distributions in the Brillouin zone, such as the spin-mixing parameter or the Berry curvature of the electronic states. We demonstrate this for three cases: (i) the Elliott-Yafet spin-relaxation mechanism in paramagnets with structural inversion symmetry; (ii) the intrinsic anomalous Hall effect in ferromagnets; and (iii) the spin Hall effect in paramagnets. We discuss the consequences of the pronounced anisotropic behavior displayed by these properties for spin-polarized transport applications.

Extrinsic spin Nernst effect from first principles

We present an ab initio description of the thermal transport phenomenon called the spin Nernst effect. It refers to generation of a spin accumulation or a pure spin current transverse to an applied temperature gradient. This is similar to the intensively studied spin Hall effect described by intrinsic and extrinsic mechanisms due to an applied electric field. Analogously, several contributions are present for the spin Nernst effect. Here we investigate the extrinsic skew scattering mechanism which is dominant in the limit of dilute alloys. Our calculations are based on a fully relativistic Korringa-Kohn-Rostoker method and a solution of the linearized Boltzmann equation. As a first application, we consider a Cu host with Au, Ti, and Bi impurities.

First-principle calculations of the Berry curvature of Bloch states for charge and spin transport of electrons

Recent progress in wave packet dynamics based on the insight of Berry pertaining to adiabatic evolution of quantum systems has led to the need for a new property of a Bloch state, the Berry curvature, to be calculated from first principles. We report here on the response to this challenge by the ab initio community during the past decade. First we give a tutorial introduction of the conceptual developments we mentioned above. Then we describe four methodologies which have been developed for first-principle calculations of the Berry curvature. Finally, to illustrate the significance of the new developments, we report some results of calculations of interesting physical properties such as the anomalous and spin Hall conductivity as well as the anomalous Nernst conductivity and discuss the influence of the Berry curvature on the de Haas-van Alphen oscillation.

Spin Hall effect induced by resonant scattering on impurities in metals

The spin Hall effect is a promising way for transforming charge currents into spin currents in spintronic devices. Large values of the spin Hall angle, the characteristic parameter of the yield of this transformation, have been recently found in noble metals doped with nonmagnetic impurities. We show that this can be explained by resonant scattering off impurity states split by the spin-orbit interaction. By using as an example copper doped with 5d impurities we describe the general conditions and provide a guide for experimentalists for obtaining the largest effects.