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Yun SJ, Duong DL, Ha DM, Singh K, Phan TL, Choi W, Kim Y, Lee YH. Ferromagnetic Order at Room Temperature in Monolayer WSe 2 Semiconductor via Vanadium Dopant. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1903076. [PMID: 32382479 PMCID: PMC7201245 DOI: 10.1002/advs.201903076] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2019] [Revised: 02/07/2020] [Accepted: 02/27/2020] [Indexed: 05/22/2023]
Abstract
Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current ratio of ≈105 at 0.1% V-doping concentration. The V-substitution to W sites keeps a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission electron microscopy. More importantly, the ferromagnetic order is clearly modulated by applying a back-gate bias. The findings open new opportunities for using 2D transition metal dichalcogenides for future spintronics.
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Affiliation(s)
- Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Doan Manh Ha
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Kirandeep Singh
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Thanh Luan Phan
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Wooseon Choi
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Young‐Min Kim
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP)Institute for Basic Science (IBS)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
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Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes. Sci Rep 2017; 7:1115. [PMID: 28442742 PMCID: PMC5430745 DOI: 10.1038/s41598-017-01219-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2016] [Accepted: 03/24/2017] [Indexed: 11/08/2022] Open
Abstract
We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.
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Gorchon J, Curiale J, Lemaître A, Moisan N, Cubukcu M, Malinowski G, Ulysse C, Faini G, von Bardeleben HJ, Jeudy V. Stochastic current-induced magnetization switching in a single semiconducting ferromagnetic layer. PHYSICAL REVIEW LETTERS 2014; 112:026601. [PMID: 24484033 DOI: 10.1103/physrevlett.112.026601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2013] [Indexed: 06/03/2023]
Abstract
We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
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Affiliation(s)
- J Gorchon
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France
| | - J Curiale
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France and Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France and Consejo Nacional de Investigaciones Científicas y Técnicas, Centro Atómico Bariloche-Comisíon Nacional de Energía Atómica, Avenida Bustillo 9500, 8400 San Carlos de Bariloche, Río Negro, Argentina
| | - A Lemaître
- Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France
| | - N Moisan
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France
| | - M Cubukcu
- Institut des nanosciences de Paris, Université Pierre et Marie Curie, CNRS, UMR7588, 75252 Paris, France
| | - G Malinowski
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France
| | - C Ulysse
- Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France
| | - G Faini
- Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France
| | - H J von Bardeleben
- Institut des nanosciences de Paris, Université Pierre et Marie Curie, CNRS, UMR7588, 75252 Paris, France
| | - V Jeudy
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France and Université Cergy-Pontoise, 95000 Cergy-Pontoise, France
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