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Zhou Y, Wang Y, Yvind K, Gregersen N, Pu M. Ultra-small mode area V-groove waveguide design for on-chip single-photon emission. OPTICS EXPRESS 2024; 32:2884-2893. [PMID: 38297806 DOI: 10.1364/oe.515904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 12/29/2023] [Indexed: 02/02/2024]
Abstract
We numerically investigate the figures of merit for single-photon emission in a planar GaAs-on-insulator waveguide featuring a V-groove geometry. Thanks to a field enhancement effect arising due to boundary conditions of this waveguide, the structure features an ultra-small mode area enabling a factor of a maximum 2.8 times enhancement of the Purcell factor for quantum dot and a more significant 7 times enhancement for the atomic-size solid-state emitters with the aligned dipole orientation. In addition, the coupling efficiency to the fundamental quasi-TE mode is also improved. To take into account potential on-chip integration, we further show that the V-groove mode profile can be converted using a tapering section to the mode profile of a standard ridge waveguide while maintaining both the high Purcell factor and the good fundamental mode coupling efficiency.
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2
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Jacobsen MA, Wang Y, Vannucci L, Claudon J, Gérard JM, Gregersen N. Performance of the nanopost single-photon source: beyond the single-mode model. NANOSCALE 2023; 15:6156-6169. [PMID: 36806428 DOI: 10.1039/d2nr07132k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We present a detailed analysis of the physics governing the collection efficiency and the Purcell enhancement of the nanopost single-photon source. We show that a standard single-mode Fabry-Pérot model is insufficient to describe the device performance, which benefits significantly from scattering from the fundamental mode to radiation modes. We show how the scattering mechanism decouples the collection efficiency from the Purcell enhancement, such that maximum collection efficiency is obtained off-resonance. Finally, we discuss how this scattering mechanism can be beneficial for future single-photon source designs.
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Affiliation(s)
- Martin Arentoft Jacobsen
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, DK-2800 Kongens Lyngby, Denmark.
| | - Yujing Wang
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, DK-2800 Kongens Lyngby, Denmark.
| | - Luca Vannucci
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, DK-2800 Kongens Lyngby, Denmark.
| | - Julien Claudon
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Jean-Michel Gérard
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Niels Gregersen
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads, Building 343, DK-2800 Kongens Lyngby, Denmark.
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3
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Finazzer M, Tanos R, Curé Y, Artioli A, Kotal S, Bleuse J, Genuist Y, Gérard JM, Donatini F, Claudon J. On-Chip Electrostatic Actuation of a Photonic Wire Antenna Embedding Quantum Dots. NANO LETTERS 2023; 23:2203-2209. [PMID: 36888899 DOI: 10.1021/acs.nanolett.2c04813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A photonic wire antenna embedding individual quantum dots (QDs) constitutes a promising platform for both quantum photonics and hybrid nanomechanics. We demonstrate here an integrated device in which on-chip electrodes can apply a static or oscillating bending force to the upper part of the wire. In the static regime, we achieve control over the bending direction and apply at will tensile or compressive mechanical stress on any QD. This results in a blue shift or red shift of their emission, with direct application to the realization of broadly tunable sources of quantum light. As a first illustration of operation in the dynamic regime, we excite the wire fundamental flexural mode and use the QD emission to detect the mechanical vibration. With an estimated operation bandwidth in the GHz range, electrostatic actuation opens appealing perspectives for the exploration of QD-nanowire hybrid mechanics with high-frequency vibrational modes.
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Affiliation(s)
- Matteo Finazzer
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Rana Tanos
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Yoann Curé
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Alberto Artioli
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Saptarshi Kotal
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Joël Bleuse
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Yann Genuist
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Jean-Michel Gérard
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Fabrice Donatini
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Julien Claudon
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
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4
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Ginés L, Moczała-Dusanowska M, Dlaka D, Hošák R, Gonzales-Ureta JR, Lee J, Ježek M, Harbord E, Oulton R, Höfling S, Young AB, Schneider C, Predojević A. High Extraction Efficiency Source of Photon Pairs Based on a Quantum Dot Embedded in a Broadband Micropillar Cavity. PHYSICAL REVIEW LETTERS 2022; 129:033601. [PMID: 35905333 DOI: 10.1103/physrevlett.129.033601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2021] [Accepted: 06/14/2022] [Indexed: 06/15/2023]
Abstract
The generation of photon pairs in quantum dots is in its nature deterministic. However, efficient extraction of photon pairs from the high index semiconductor material requires engineering of the photonic environment. We report on a micropillar device with 69.4(10)% efficiency that features broadband operation suitable for extraction of photon pairs. Opposing the approaches that rely solely on Purcell enhancement to realize the enhancement of the extraction efficiency, our solution exploits a suppression of the emission into the modes other than the cavity mode. Furthermore, the design of the device can be further optimized to allow for an extraction efficiency of 85%.
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Affiliation(s)
- Laia Ginés
- Department of Physics, Stockholm University, 10691 Stockholm, Sweden
| | - Magdalena Moczała-Dusanowska
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - David Dlaka
- Quantum Engineering Technology Labs, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, BS8 1FD, United Kingdom
| | - Radim Hošák
- Department of Optics, Palacký University, 17. listopadu 12, 77146 Olomouc, Czech Republic
| | | | - Jaewon Lee
- Department of Physics, Stockholm University, 10691 Stockholm, Sweden
| | - Miroslav Ježek
- Department of Optics, Palacký University, 17. listopadu 12, 77146 Olomouc, Czech Republic
| | - Edmund Harbord
- Quantum Engineering Technology Labs, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, BS8 1FD, United Kingdom
| | - Ruth Oulton
- Quantum Engineering Technology Labs, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, BS8 1FD, United Kingdom
| | - Sven Höfling
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Andrew B Young
- Quantum Engineering Technology Labs, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, BS8 1FD, United Kingdom
| | | | - Ana Predojević
- Department of Physics, Stockholm University, 10691 Stockholm, Sweden
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5
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Zielińska A, Musiał A, Wyborski P, Kuniej M, Heuser T, Srocka N, Grosse J, Reithmaier JP, Benyoucef M, Rodt S, Reitzenstein S, Rudno-Rudziński W. Temperature dependence of refractive indices of Al 0.9Ga 0.1As and In 0.53Al 0.1Ga 0.37As in the telecommunication spectral range. OPTICS EXPRESS 2022; 30:20225-20240. [PMID: 36224773 DOI: 10.1364/oe.457952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2022] [Accepted: 05/05/2022] [Indexed: 06/16/2023]
Abstract
In this work, we determine the temperature dependence of refractive indices of In0.53Al0.1Ga0.37As and Al0.9Ga0.1As semiconductor alloys at telecommunication wavelengths in the range from room temperature down to 10 K. For that, we measure the temperature-dependent reflectance of two structures: with an Al0.9Ga0.1As/GaAs distributed Bragg reflector (DBR) designed for 1.3 µm and with an In0.53Al0.1Ga0.37As/InP DBR designed for 1.55 µm. The obtained experimental results are compared to DBR reflectivity spectra calculated within the transfer matrix method to determine refractive index values. We further show that changes due to the thermal expansion of the DBR layers are negligible for our method.
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6
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Rakhlin M, Klimko G, Sorokin S, Kulagina M, Zadiranov Y, Kazanov D, Shubina T, Ivanov S, Toropov A. Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna. NANOMATERIALS 2022; 12:nano12091562. [PMID: 35564271 PMCID: PMC9104217 DOI: 10.3390/nano12091562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/06/2022] [Revised: 04/28/2022] [Accepted: 05/01/2022] [Indexed: 11/16/2022]
Abstract
We report on single-photon emitters for the telecommunication O-band (1260–1360 nm), which comprise an InAs/(In)GaAs quantum dot with asymmetric barriers, placed inside a semiconductor tapered nanocolumn acting as a photonic nanoantenna. The implemented design of the barriers provides a shift in the quantum dot radiation wavelength towards the O-band, while the nanoantenna collects the radiation and ensures its effective output. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 10 MHz with the second-order correlation function g(2)(0) = 0.18 at 8 K.
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7
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Gür UM, Yang Y, Schall J, Schmidt R, Kaganskiy A, Wang Y, Vannucci L, Mattes M, Arslanagić S, Reitzenstein S, Gregersen N. Design and fabrication of ridge waveguide-based nanobeam cavities for on-chip single-photon sources. OPTICS EXPRESS 2022; 30:11973-11985. [PMID: 35473128 DOI: 10.1364/oe.453164] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2022] [Accepted: 03/10/2022] [Indexed: 06/14/2023]
Abstract
We report on the design of nanohole/nanobeam cavities in ridge waveguides for on-chip, quantum-dot-based single-photon generation. Our design overcomes limitations of a low-refractive-index-contrast material platform in terms of emitter-mode coupling efficiency and yields an outcoupling efficiency of 0.73 to the output ridge waveguide. Importantly, this high coupling efficiency is combined with broadband operation of 9 nm full-width half-maximum. We provide an explicit design procedure for identifying the optimum geometrical parameters according to the developed design. Besides, we fabricate and optically characterize a proof-of-concept waveguide structure. The results of the microphotoluminescence measurements provide evidence for cavity-enhanced spontaneous emission from the quantum dot, thus supporting the potential of our design for on-chip single-photon sources applications.
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8
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Chang TY, Kim H, Hubbard WA, Azizur-Rahman KM, Ju JJ, Kim JH, Lee WJ, Huffaker D. InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12488-12494. [PMID: 35175722 DOI: 10.1021/acsami.1c21013] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their power-dependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.
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Affiliation(s)
- Ting-Yuan Chang
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Hyunseok Kim
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - William A Hubbard
- NanoElectronic Imaging Inc., Los Angeles, California 90095, United States
| | | | - Jung Jin Ju
- Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea
| | - Je-Hyung Kim
- Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Wook-Jae Lee
- Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea
- Department of Data Information and Physics, Kongju National University, Gongju 32588, South Korea
| | - Diana Huffaker
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- School of Physics and Astronomy, Cardiff University, Cardiff, Wales CF24 3AA, U.K
- Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
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9
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Purcell Effect and Beaming of Emission in Hybrid AlGaAs Nanowires with GaAs Quantum Dots. NANOMATERIALS 2021; 11:nano11112894. [PMID: 34835659 PMCID: PMC8617613 DOI: 10.3390/nano11112894] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/29/2021] [Revised: 10/20/2021] [Accepted: 10/27/2021] [Indexed: 11/17/2022]
Abstract
Control of directionality of emissions is an important task for the realization of novel nanophotonic devices based on nanowires. Most of the existing approaches providing high directionality of the light emitted from nanowires are based on the utilization of the tapered shape of nanowires, serving as nanoantenna coupling with the light waveguided in nanowire and the directional output beam. Here we report the beaming of the emitted light with wavelength near 800 nm by naturally formed core-shell AlGaAs NW with multiply GaAs quantum dots (QDs) diameter 30 nm and height 10 nm, while the diameter of NW 130 nm, what does not support efficient emission into waveguided modes, including the mode HE11. Experimental measurements show that intensity of emission for directions in the vicinity of the axis of NW is about two orders of magnitude higher than for perpendicular directions. The developed theoretical approach allowed us to calculate the probability of spontaneous emission for various directions and into waveguided modes and showed that highly directional radiation can be provided by the intrinsic emission properties of cylindrical NW. Our results suggest that for the small diameter of NW, directional emissions are associated with an TM0 leaky mode (when electric field oriented in axial direction) and therefore manifests in an existence of axial electric dipole transitions in quantum dots.
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10
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Jaffal A, Regreny P, Patriarche G, Gendry M, Chauvin N. Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring. NANOSCALE 2021; 13:16952-16958. [PMID: 34610634 DOI: 10.1039/d1nr04263g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during the radial growth sequence of the InP shell, hexagonal asymmetric (HA) NWs with long/short cross-section axes were obtained instead of the usual symmetrical shape. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross-section axis. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs. More importantly, the growth protocol herein is fully compatible with the current applications of HA NWs covering a wide range of devices such as polarized light emitting diodes and photodetectors.
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Affiliation(s)
- Ali Jaffal
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
- Univ Lyon, CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France.
| | - Philippe Regreny
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies - C2N, 91120, Palaiseau, France
| | - Michel Gendry
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | - Nicolas Chauvin
- Univ Lyon, CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France.
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11
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Peinke E, Sattler T, Torelly GM, Souza PL, Perret S, Bleuse J, Claudon J, Vos WL, Gérard JM. Tailoring the properties of quantum dot-micropillars by ultrafast optical injection of free charge carriers. LIGHT, SCIENCE & APPLICATIONS 2021; 10:215. [PMID: 34667148 PMCID: PMC8526595 DOI: 10.1038/s41377-021-00654-y] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/05/2021] [Revised: 09/06/2021] [Accepted: 09/12/2021] [Indexed: 06/13/2023]
Abstract
We review recent studies of cavity switching induced by the optical injection of free carriers in micropillar cavities containing quantum dots. Using the quantum dots as a broadband internal light source and a streak camera as detector, we track the resonance frequencies for a large set of modes with picosecond time resolution. We report a record-fast switch-on time constant (1.5 ps) and observe major transient modifications of the modal structure of the micropillar on the 10 ps time scale: mode crossings are induced by a focused symmetric injection of free carriers, while a lifting of several mode degeneracies is observed when off-axis injection breaks the rotational symmetry of the micropillar. We show theoretically and experimentally that cavity switching can be used to tailor the dynamic properties of the coupled QD-cavity system. We report the generation of ultrashort spontaneous emission pulses (as short as 6 ps duration) by a collection of frequency-selected QDs in a switched pillar microcavity. These pulses display a very small coherence length, attractive for ultrafast speckle-free imaging. Moreover, the control of QD-mode coupling on the 10 ps time scale establishes cavity switching as an appealing resource for quantum photonics.
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Affiliation(s)
- Emanuel Peinke
- Université Grenoble Alpes, CEA, IRIG-PHELIQS, "Nanophysique et Semiconducteurs" group, F-38000, Grenoble, France
| | - Tobias Sattler
- Université Grenoble Alpes, CEA, IRIG-PHELIQS, "Nanophysique et Semiconducteurs" group, F-38000, Grenoble, France
| | - Guilherme M Torelly
- Université Grenoble Alpes, CEA, IRIG-PHELIQS, "Nanophysique et Semiconducteurs" group, F-38000, Grenoble, France
- LabSem-CETUC, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro, 22451-900, Brazil
| | - Patricia L Souza
- LabSem-CETUC, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro, 22451-900, Brazil
| | - Sylvain Perret
- Université Grenoble Alpes, CEA, IRIG-PHELIQS, "Nanophysique et Semiconducteurs" group, F-38000, Grenoble, France
| | - Joël Bleuse
- Université Grenoble Alpes, CEA, IRIG-PHELIQS, "Nanophysique et Semiconducteurs" group, F-38000, Grenoble, France
| | - Julien Claudon
- Université Grenoble Alpes, CEA, IRIG-PHELIQS, "Nanophysique et Semiconducteurs" group, F-38000, Grenoble, France
| | - Willem L Vos
- Complex Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, the Netherlands
| | - Jean-Michel Gérard
- Université Grenoble Alpes, CEA, IRIG-PHELIQS, "Nanophysique et Semiconducteurs" group, F-38000, Grenoble, France.
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12
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Jaffal A, Regreny P, Patriarche G, Chauvin N, Gendry M. Density-controlled growth of vertical InP nanowires on Si(111) substrates. NANOTECHNOLOGY 2020; 31:354003. [PMID: 32428880 DOI: 10.1088/1361-6528/ab9475] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method based on controlling the number and the size of the Au-In catalyst droplets in addition to the conditions for the NW nucleation. We show that the NW density can be tuned with values in the range of 18 µm-2 to <0.1 µm-2 by the suitable choice of the In/Au catalyst beam equivalent pressure (BEP) ratio, by the phosphorous BEP and the growth temperature. The same degree of control is transferred to InAs/InP quantum dot-nanowires, taking advantage of the ultra-low density to study by micro-photoluminescence the optical properties of a single quantum dot-nanowires emitting in the telecom band monolithically grown on silicon. Optical spectroscopy at cryogenic temperature successfully confirmed the relevance of our method to excite single InAs quantum dots on the as-grown sample, which opens the path for large-scale applications based on single quantum dot-nanowire devices integrated on silicon. .
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Affiliation(s)
- A Jaffal
- Institut des Nanotechnologies des Lyon-INL, UMR 5270 CNRS, INSA de Lyon, Université de Lyon, 7 avenue Jean Capelle, 69621, Villeurbanne cedex, France. Institut des Nanotechnologies des Lyon-INL, UMR 5270 CNRS, Ecole Centrale de Lyon, Université de Lyon, 36 avenue Guy de Collongue, 69134, Ecully cedex, France
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13
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Yang J, Nawrath C, Keil R, Joos R, Zhang X, Höfer B, Chen Y, Zopf M, Jetter M, Luca Portalupi S, Ding F, Michler P, Schmidt OG. Quantum dot-based broadband optical antenna for efficient extraction of single photons in the telecom O-band. OPTICS EXPRESS 2020; 28:19457-19468. [PMID: 32672222 DOI: 10.1364/oe.395367] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 05/24/2020] [Indexed: 06/11/2023]
Abstract
Long-distance fiber-based quantum communication relies on efficient non-classical light sources operating at telecommunication wavelengths. Semiconductor quantum dots are promising candidates for on-demand generation of single photons and entangled photon pairs for such applications. However, their brightness is strongly limited due to total internal reflection at the semiconductor/vacuum interface. Here we overcome this limitation using a dielectric antenna structure. The non-classical light source consists of a gallium phosphide solid immersion lens in combination with a quantum dot nanomembrane emitting single photons in the telecom O-band. With this device, the photon extraction is strongly increased in a broad spectral range. A brightness of 17% (numerical aperture of 0.6) is obtained experimentally, with a single photon purity of g(2)(0)=0.049±0.02 at saturation power. This brings the practical implementation of quantum communication networks one step closer.
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14
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Abstract
Semiconductor nanowires are of interest as light emitters in applications such as light-emitting diodes and single-photon sources. Due to the three-dimensional geometry in combination with a size comparable to the wavelength of the emitted light, nanowires have shown strong scattering effects for the emitted light. Here, we demonstrate with electromagnetic modeling that the emission properties of nanowires/nanocones show a complicated dependence on the geometry of the nanowire/nanocone, the shape and position of the emitter region, and the polarization of the emitter. We show that with proper design, the extraction efficiency can close in on 80% for as-grown single nanowires/nanocones. Importantly, we demonstrate how the internal quantum efficiency of the emitter plays a large role in the design process. A considerably different geometry design approach should be undertaken at low and high internal quantum efficiency. Due to the complicated design optimization, we strongly recommend the use of electromagnetic modeling of the emission to give guidance for suitable designs before starting the fabrication and processing of nanowire/nanocone-based light emitters.
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15
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Zhao TM, Chen Y, Yu Y, Li Q, Davanco M, Liu J. Advanced technologies for quantum photonic devices based on epitaxial quantum dots. ADVANCED QUANTUM TECHNOLOGIES 2020; 3:10.1002/qute.201900034. [PMID: 36452403 PMCID: PMC9706462 DOI: 10.1002/qute.201900034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2019] [Indexed: 05/12/2023]
Abstract
Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on-demand generation of single-photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. In this review, we focus on the latest significant progress of QD photonic devices. We first discuss advanced technologies in QD growth, with special attention to droplet epitaxy and site-controlled QDs. Then we overview the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques. We extend our discussion to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light-emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.
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Affiliation(s)
- Tian Ming Zhao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Yan Chen
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Qing Li
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
| | - Marcelo Davanco
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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16
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Artioli A, Kotal S, Gregersen N, Verlot P, Gérard JM, Claudon J. Design of Quantum Dot-Nanowire Single-Photon Sources that are Immune to Thermomechanical Decoherence. PHYSICAL REVIEW LETTERS 2019; 123:247403. [PMID: 31922831 DOI: 10.1103/physrevlett.123.247403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2019] [Indexed: 06/10/2023]
Abstract
Nanowire antennas embedding a single quantum dot (QD) have recently emerged as versatile platforms to realize bright sources of quantum light. In this theoretical work, we show that the thermally driven, low-frequency vibrations of the nanowire have a major impact on the QD light emission spectrum. Even at liquid helium temperatures, these prevent the emission of indistinguishable photons. To overcome this intrinsic limitation, we propose three designs that restore photon indistinguishability thanks to a specific engineering of the mechanical properties of the nanowire. We anticipate that such a mechanical optimization will also play a key role in the development of other high-performance light-matter interfaces based on nanostructures.
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Affiliation(s)
- Alberto Artioli
- Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - Saptarshi Kotal
- Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - Niels Gregersen
- DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
| | - Pierre Verlot
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Jean-Michel Gérard
- Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - Julien Claudon
- Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
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17
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Jaffal A, Redjem W, Regreny P, Nguyen HS, Cueff S, Letartre X, Patriarche G, Rousseau E, Cassabois G, Gendry M, Chauvin N. InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon. NANOSCALE 2019; 11:21847-21855. [PMID: 31696191 DOI: 10.1039/c9nr06114b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a beam divergence angle θ = 30° is demonstrated using a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, g2(0) = 0.05, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.
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Affiliation(s)
- Ali Jaffal
- Université de Lyon, Institut des Nanotechnologies de Lyon, UMR 5270 CNRS, INSA de Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne cedex, France.
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18
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Dirnberger F, Abujetas D, König J, Forsch M, Koller T, Gronwald I, Lange C, Huber R, Schüller C, Korn T, Sánchez-Gil J, Bougeard D. Tuning Spontaneous Emission through Waveguide Cavity Effects in Semiconductor Nanowires. NANO LETTERS 2019; 19:7287-7292. [PMID: 31525062 DOI: 10.1021/acs.nanolett.9b02883] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The ability to tailor waveguide cavities and couple them with quantum emitters has developed a realm of nanophotonics encompassing, for example, highly efficient single photon generation or the control of giant photon nonlinearities. Opening new grounds by pushing the interaction of the waveguide cavity and integrated emitters further into the deep subwavelength regime, however, has been complicated by nonradiative losses due to the increasing importance of surface defects when decreasing cavity dimensions. Here, we show efficient suppression of nonradiative recombination for thin waveguide cavities using core-shell semiconductor nanowires. We experimentally reveal the advantages of such nanowires, which host mobile emitters, that is, free excitons, in a one-dimensional (1D) waveguide, highlighting the resulting potential for tunable, active, nanophotonic devices. In our experiment, controlling the nanowire waveguide diameter tunes the luminescence lifetime of excitons in the nanowires across 2 orders of magnitude up to 80 ns. At the smallest wire diameters, we show that this luminescence lifetime can be manipulated by engineering the dielectric environment of the nanowires. Exploiting this unique handle on the spontaneous emission of mobile emitters, we demonstrate an all-dielectric spatial control of the mobile emitters along the axis of the 1D nanowire waveguide.
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Affiliation(s)
- Florian Dirnberger
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
| | - Diego Abujetas
- Instituto de Estructura de la Materia (IEM-CSIC) , Consejo Superior de Investigaciones Científicas , Serrano 121 , 28006 Madrid , Spain
| | - Jan König
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
| | - Moritz Forsch
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
| | - Thomas Koller
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
| | - Imke Gronwald
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
| | - Christoph Lange
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
| | - Rupert Huber
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
| | - Christian Schüller
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
| | - Tobias Korn
- Institut für Physik , Universität Rostock , D-18051 Rostock , Germany
| | - José Sánchez-Gil
- Instituto de Estructura de la Materia (IEM-CSIC) , Consejo Superior de Investigaciones Científicas , Serrano 121 , 28006 Madrid , Spain
| | - Dominique Bougeard
- Institut für Experimentelle und Angewandte Physik , Universität Regensburg , D-93040 Regensburg , Germany
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19
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Imran M, Wang H, Jiang Y, Xu Z, Shen L. Harnessing graphene-hBN hyperstructure for single-photon sources. OPTICS EXPRESS 2019; 27:16461-16474. [PMID: 31252871 DOI: 10.1364/oe.27.016461] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
One of the key challenges to move single-photon sources into practical applications is the ability to efficiently extract light from a single quantum emitter while maintaining efficient photon emission. Here, we propose to harness the optical topological transitions of graphene-hBN hyperstructure to engineer the emission from quantum emitters and achieve preferential power extraction. We have designed a hyperstructure, which possesses tunability of spontaneous emission and enhancement of extraction during optical topological transitions from the closed (ellipsoid) isofrequency surface to an open (hyperboloid) isofrequency surface by tuning the chemical potential of graphene. Such an interesting feature relies exclusively on the hyperbolic properties of hBN and tunable behavior of graphene, which is confirmed by detailed calculations and simulations. Remarkably, single-photon sources based on the hyperstructure do not require overmuch microfabrication and they are capable of working at tunable frequency.
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20
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Dalacu D, Poole PJ, Williams RL. Nanowire-based sources of non-classical light. NANOTECHNOLOGY 2019; 30:232001. [PMID: 30703755 DOI: 10.1088/1361-6528/ab0393] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Sources of quantum light that utilize photonic nanowire designs have emerged as potential candidates for high efficiency non-classical light generation in quantum information processing. In this review we cover the different platforms used to produce nanowire-based sources, highlighting the importance of waveguide design and material properties in achieving optimal performance. The limitations of the sources are identified and routes to optimization are proposed. State-of-the-art nanowire sources are compared to other solid-state quantum emitter platforms with regard to the key metrics of single photon purity, indistinguishability and entangled-pair fidelity to maximally entangled Bell states. We also discuss the unique ability of the nanowire platform to incorporate multiple emitters in the same optical mode and consider potential applications. Finally, routes to on-chip integration are discussed and the challenges facing the development of a nanowire-based scalable architecture are presented.
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Affiliation(s)
- Dan Dalacu
- National Research Council of Canada, Ottawa, Ontario, K1A 0R6, Canada
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21
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Zhu G, Liao Q. Highly efficient collection for photon emission enhanced by the hybrid photonic-plasmonic cavity. OPTICS EXPRESS 2018; 26:31391-31401. [PMID: 30650725 DOI: 10.1364/oe.26.031391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2018] [Accepted: 10/22/2018] [Indexed: 06/09/2023]
Abstract
Simultaneously obtaining high photon emission rate and collection efficiency is highly desirable for applications of single photon sources. However, it remains great challenging and is seldom reported before. Here, we demonstrate that highly enhanced radiation of the emitter and efficient collection of the emitted photons can be simultaneously fulfilled in a hybrid photonic-plasmonic cavity which comprises of an Au nanorod dimer and a photonic crystal nanobeam cavity with a collecting waveguide, where the resonance wavelength of nanobeam cavity is red-detuned from that of the Au nanorod dimer. Our calculations show that the spontaneous emission rate of a single emitter can be enhanced by 5060 -folds, correspondingly, the far-field radiation efficiency and collection efficiency into a dielectric waveguide reaches ~97% and ~67%, respectively. The proposed mechanism paves the way towards the practical applications in ultra-bright on-chip single photon sources and plasmon-based nanolasers.
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22
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Fons R, Osterkryger AD, Stepanov P, Gautier E, Bleuse J, Gérard JM, Gregersen N, Claudon J. All-Optical Mapping of the Position of Quantum Dots Embedded in a Nanowire Antenna. NANO LETTERS 2018; 18:6434-6440. [PMID: 30185050 DOI: 10.1021/acs.nanolett.8b02826] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Nanowire antennas embedding single quantum dots (QDs) have recently emerged as a versatile solid-state platform for quantum optics. Within the nanowire section, the emitter position simultaneously determines the strength of the light-matter interaction, as well as the coupling to potential decoherence channels. Therefore, to quantitatively understand device performance and guide future optimization, it is highly desirable to map the emitter position with an accuracy much smaller than the waveguide diameter, on the order of a few hundreds of nanometers. We introduce here a nondestructive, all-optical mapping technique that exploits the QD emission into two guided modes with different transverse profiles. These two modes are fed by the same emitter and thus interfere. The resulting intensity pattern, which is highly sensitive to the emitter position, is resolved in the far-field using Fourier microscopy. We demonstrate this technique on a standard microphotoluminescence setup and map the position of individual QDs in a nanowire antenna with a spatial resolution of ±10 nm. This work opens important perspectives for the future development of light-matter interfaces based on nanowire antennas. Beyond single-QD devices, it will also provide a valuable tool for the investigation of collective effects that imply several emitters coupled to an optical waveguide.
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Affiliation(s)
- Romain Fons
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
| | - Andreas D Osterkryger
- DTU Fotonik, Department of Photonics Engineering , Technical University of Denmark , Ørsteds Plads Building 343 , DK-2800 Kongens Lyngby , Denmark
| | - Petr Stepanov
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
| | - Eric Gautier
- Univ. Grenoble Alpes, CEA, CNRS, INAC, SPINTEC , F-38000 Grenoble , France
| | - Joël Bleuse
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
| | - Jean-Michel Gérard
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
| | - Niels Gregersen
- DTU Fotonik, Department of Photonics Engineering , Technical University of Denmark , Ørsteds Plads Building 343 , DK-2800 Kongens Lyngby , Denmark
| | - Julien Claudon
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
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23
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Light–Matter Interaction of Single Quantum Emitters with Dielectric Nanostructures. PHOTONICS 2018. [DOI: 10.3390/photonics5020014] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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24
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Senellart P, Solomon G, White A. High-performance semiconductor quantum-dot single-photon sources. NATURE NANOTECHNOLOGY 2017; 12:1026-1039. [PMID: 29109549 DOI: 10.1038/nnano.2017.218] [Citation(s) in RCA: 246] [Impact Index Per Article: 35.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2016] [Accepted: 09/29/2017] [Indexed: 05/20/2023]
Abstract
Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.
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Affiliation(s)
- Pascale Senellart
- Center for Nanosciences and Nanotechnology CNRS, UMR9001, University Paris-Saclay, C2N - Site de Marcoussis, Route de Nozay, 91460 Marcoussis, France
| | - Glenn Solomon
- Joint Quantum Institute, National Institute of Standards and Technology, and University of Maryland, Gaithersburg, Maryland 20889, USA
| | - Andrew White
- Centre for Engineered Quantum Systems and Centre for Quantum Computer and Communication Technology, School of Mathematics and Physics, University of Queensland, Brisbane, Queensland 4072, Australia
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25
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Davanco M, Liu J, Sapienza L, Zhang CZ, De Miranda Cardoso JV, Verma V, Mirin R, Nam SW, Liu L, Srinivasan K. Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices. Nat Commun 2017; 8:889. [PMID: 29026109 PMCID: PMC5715121 DOI: 10.1038/s41467-017-00987-6] [Citation(s) in RCA: 56] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2017] [Accepted: 08/09/2017] [Indexed: 12/23/2022] Open
Abstract
Single-quantum emitters are an important resource for photonic quantum technologies, constituting building blocks for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of such functions is achieved through systems that provide both strong light–matter interactions and a low-loss interface between emitters and optical fields. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we develop a heterogeneous photonic integration platform that provides such capabilities in a scalable on-chip implementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots—a mature class of solid-state quantum emitter—with low-loss Si3N4 waveguides. We demonstrate a highly efficient optical interface between Si3N4 waveguides and single-quantum dots in GaAs geometries, with performance approaching that of devices optimized for each material individually. This includes quantum dot radiative rate enhancement in microcavities, and a path for reaching the non-perturbative strong-coupling regime. Effective use of single emitters in quantum photonics requires coherent emission, strong light-matter coupling, low losses and scalable fabrication. Here, Davanco et al. stride toward this goal by hybrid on-chip integration of Si3N4 waveguides and GaAs nanophotonic geometries with InAs quantum dots.
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Affiliation(s)
- Marcelo Davanco
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
| | - Jin Liu
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA. .,School of Physics, Sun-Yat Sen University, Guangzhou, 510275, China. .,Maryland NanoCenter, University of Maryland, College Park, MD, USA.
| | - Luca Sapienza
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.,Department of Physics & Astronomy, University of Southampton, Southampton, S017 1BJ, UK
| | - Chen-Zhao Zhang
- South China Academy of Advanced Optoelectronics, Science Building No. 5, South China Normal University, Higher-Education Mega-Center, Guangzhou, 510006, China
| | - José Vinícius De Miranda Cardoso
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.,Federal University of Campina Grande, Campina Grande, Brazil
| | - Varun Verma
- National Institute of Standards and Technology, Boulder, CO, 80305, USA
| | - Richard Mirin
- National Institute of Standards and Technology, Boulder, CO, 80305, USA
| | - Sae Woo Nam
- National Institute of Standards and Technology, Boulder, CO, 80305, USA
| | - Liu Liu
- South China Academy of Advanced Optoelectronics, Science Building No. 5, South China Normal University, Higher-Education Mega-Center, Guangzhou, 510006, China
| | - Kartik Srinivasan
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
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26
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Resonant driving of a single photon emitter embedded in a mechanical oscillator. Nat Commun 2017; 8:76. [PMID: 28710414 PMCID: PMC5511291 DOI: 10.1038/s41467-017-00097-3] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2017] [Accepted: 05/31/2017] [Indexed: 11/15/2022] Open
Abstract
Coupling a microscopic mechanical resonator to a nanoscale quantum system enables control of the mechanical resonator via the quantum system and vice-versa. The coupling is usually achieved through functionalization of the mechanical resonator, but this results in additional mass and dissipation channels. An alternative is an intrinsic coupling based on strain. Here we employ a monolithic semiconductor system: the nanoscale quantum system is a semiconductor quantum dot (QD) located inside a nanowire. We demonstrate the resonant optical driving of the QD transition in such a structure. The noise spectrum of the resonance fluorescence signal, recorded in the single-photon counting regime, reveals a coupling to mechanical modes of different types. We measure a sensitivity to displacement of 65 fm/\documentclass[12pt]{minimal}
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\begin{document}$$\sqrt {{\rm{Hz}}} $$\end{document}Hz limited by charge noise in the device. Finally, we use thermal excitation of the different modes to determine the location of the QD within the trumpet, and calculate the contribution of the Brownian motion to the dephasing of the emitter. Resonant driving of a nanoscale quantum system coupled to a microscopic mechanical resonator may have uses in precision sensing and quantum information. The authors realize this by tailoring the geometry of a semiconductor nanowire embedding a quantum dot, detecting sub-picometre displacements.
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27
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Grange T, Somaschi N, Antón C, De Santis L, Coppola G, Giesz V, Lemaître A, Sagnes I, Auffèves A, Senellart P. Reducing Phonon-Induced Decoherence in Solid-State Single-Photon Sources with Cavity Quantum Electrodynamics. PHYSICAL REVIEW LETTERS 2017; 118:253602. [PMID: 28696749 DOI: 10.1103/physrevlett.118.253602] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2016] [Indexed: 06/07/2023]
Abstract
Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zero-phonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of temperature. We show that a large coupling to a high quality factor cavity can simultaneously reduce the effect of both phonon-induced sources of decoherence. It first limits the effect of pure dephasing on the zero-phonon line with indistinguishabilities above 97% up to 18 K. Moreover, it efficiently redirects the phonon sidebands into the zero-phonon line and brings the indistinguishability of the full emission spectrum from 87% (24%) without cavity effect to more than 99% (76%) at 0K (20K). We provide guidelines for optimal cavity designs that further minimize the phonon-induced decoherence.
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Affiliation(s)
- T Grange
- Université Grenoble Alpes, F-38000 Grenoble, France
- Centre National de la Recherche Scientifique, Institut Néel, Nanophysique et Semiconducteurs Group, F-38000 Grenoble, France
| | - N Somaschi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, UMR 9001, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France
| | - C Antón
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, UMR 9001, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France
| | - L De Santis
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, UMR 9001, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France
- Université Paris-Sud, Université Paris-Saclay, F-91405 Orsay, France
| | - G Coppola
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, UMR 9001, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France
| | - V Giesz
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, UMR 9001, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France
| | - A Lemaître
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, UMR 9001, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France
| | - I Sagnes
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, UMR 9001, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France
| | - A Auffèves
- Université Grenoble Alpes, F-38000 Grenoble, France
- Centre National de la Recherche Scientifique, Institut Néel, Nanophysique et Semiconducteurs Group, F-38000 Grenoble, France
| | - P Senellart
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, UMR 9001, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France
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28
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Khoshnegar M, Huber T, Predojević A, Dalacu D, Prilmüller M, Lapointe J, Wu X, Tamarat P, Lounis B, Poole P, Weihs G, Majedi H. A solid state source of photon triplets based on quantum dot molecules. Nat Commun 2017; 8:15716. [PMID: 28604705 PMCID: PMC5472777 DOI: 10.1038/ncomms15716] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2016] [Accepted: 04/21/2017] [Indexed: 11/30/2022] Open
Abstract
Producing advanced quantum states of light is a priority in quantum information technologies. In this context, experimental realizations of multipartite photon states would enable improved tests of the foundations of quantum mechanics as well as implementations of complex quantum optical networks and protocols. It is favourable to directly generate these states using solid state systems, for simpler handling and the promise of reversible transfer of quantum information between stationary and flying qubits. Here we use the ground states of two optically active coupled quantum dots to directly produce photon triplets. The formation of a triexciton in these ground states leads to a triple cascade recombination and sequential emission of three photons with strong correlations. We record 65.62 photon triplets per minute under continuous-wave pumping, surpassing rates of earlier reported sources. Our structure and data pave the way towards implementing multipartite photon entanglement and multi-qubit readout schemes in solid state devices. Multipartite photon states are desirable in quantum information technology but their generation in optical systems is less efficient with poor scaling. Here the authors demonstrate time-ordered photon triplets from a quantum dot molecule in a direct generation process with increased efficiency.
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Affiliation(s)
- Milad Khoshnegar
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1.,Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1.,Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
| | - Tobias Huber
- Institut für Experimentalphysik, Universität Innsbruck, Technikerstr. 25, 6020 Innsbruck, Austria
| | - Ana Predojević
- Institut für Experimentalphysik, Universität Innsbruck, Technikerstr. 25, 6020 Innsbruck, Austria
| | - Dan Dalacu
- National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario, Canada K1A 0R6
| | - Maximilian Prilmüller
- Institut für Experimentalphysik, Universität Innsbruck, Technikerstr. 25, 6020 Innsbruck, Austria
| | - Jean Lapointe
- National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario, Canada K1A 0R6
| | - Xiaohua Wu
- National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario, Canada K1A 0R6
| | - Philippe Tamarat
- Université Bordeaux, LP2N Institut d'Optique and CNRS, Talence F-33405, France
| | - Brahim Lounis
- Université Bordeaux, LP2N Institut d'Optique and CNRS, Talence F-33405, France
| | - Philip Poole
- National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario, Canada K1A 0R6
| | - Gregor Weihs
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1.,Institut für Experimentalphysik, Universität Innsbruck, Technikerstr. 25, 6020 Innsbruck, Austria
| | - Hamed Majedi
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1.,Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
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29
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Jöns KD, Schweickert L, Versteegh MAM, Dalacu D, Poole PJ, Gulinatti A, Giudice A, Zwiller V, Reimer ME. Bright nanoscale source of deterministic entangled photon pairs violating Bell's inequality. Sci Rep 2017; 7:1700. [PMID: 28490728 PMCID: PMC5475295 DOI: 10.1038/s41598-017-01509-6] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2017] [Accepted: 03/28/2017] [Indexed: 11/18/2022] Open
Abstract
Global, secure quantum channels will require efficient distribution of entangled photons. Long distance, low-loss interconnects can only be realized using photons as quantum information carriers. However, a quantum light source combining both high qubit fidelity and on-demand bright emission has proven elusive. Here, we show a bright photonic nanostructure generating polarization-entangled photon pairs that strongly violates Bell’s inequality. A highly symmetric InAsP quantum dot generating entangled photons is encapsulated in a tapered nanowire waveguide to ensure directional emission and efficient light extraction. We collect ~200 kHz entangled photon pairs at the first lens under 80 MHz pulsed excitation, which is a 20 times enhancement as compared to a bare quantum dot without a photonic nanostructure. The performed Bell test using the Clauser-Horne-Shimony-Holt inequality reveals a clear violation (SCHSH > 2) by up to 9.3 standard deviations. By using a novel quasi-resonant excitation scheme at the wurtzite InP nanowire resonance to reduce multi-photon emission, the entanglement fidelity (F = 0.817 ± 0.002) is further enhanced without temporal post-selection, allowing for the violation of Bell’s inequality in the rectilinear-circular basis by 25 standard deviations. Our results on nanowire-based quantum light sources highlight their potential application in secure data communication utilizing measurement-device-independent quantum key distribution and quantum repeater protocols.
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Affiliation(s)
- Klaus D Jöns
- Applied Physics Department, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91, Stockholm, Sweden. .,Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ, Delft, The Netherlands.
| | - Lucas Schweickert
- Applied Physics Department, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91, Stockholm, Sweden.,Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ, Delft, The Netherlands
| | - Marijn A M Versteegh
- Applied Physics Department, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91, Stockholm, Sweden.,Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ, Delft, The Netherlands.,Quantum optics, Quantum Nanophysics and Quantum Information, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090, Vienna, Austria.,Institute for Quantum Optics and Quantum Information, Austrian Academy of Science, Boltzmanngasse 3, 1090, Vienna, Austria
| | - Dan Dalacu
- National Research Council of Canada, Ottawa, K1A 0R6, Canada
| | - Philip J Poole
- National Research Council of Canada, Ottawa, K1A 0R6, Canada
| | - Angelo Gulinatti
- Politecnico di Milano, Dipartimento di Elettronica Informazione e Bioingegneria, piazza Leonardo da Vinci 32, 20133, Milano, Italy
| | - Andrea Giudice
- Micro Photon Devices, via Stradivari 4, 39100, Bolzano, Italy
| | - Val Zwiller
- Applied Physics Department, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91, Stockholm, Sweden.,Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ, Delft, The Netherlands
| | - Michael E Reimer
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ, Delft, The Netherlands.,Institute for Quantum Computing and Department of Electrical & Computer Engineering, University of Waterloo, Waterloo, N2L 3G1, Canada
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30
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Valente D, Brito F, Werlang T. Dynamic Stark shift induced by a single photon packet. OPTICS LETTERS 2017; 42:1692-1695. [PMID: 28454137 DOI: 10.1364/ol.42.001692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The dynamic Stark shift results from the interaction of an atom with the electromagnetic field. We show how a propagating single-photon wave packet can induce a time-dependent dynamical Stark shift on a two-level system (TLS). A non-perturbative fully quantum treatment is employed, where the quantum dynamics of both the field and the TLS are analyzed. We also provide the means to experimentally access such time-dependent frequency by measuring the interference pattern in the electromagnetic field inside a 1D waveguide. The effect we evidence here may find applications in the autonomous quantum control of quantum systems without classical external fields, which can be useful for quantum information processing as well as for quantum thermodynamical tasks.
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31
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Yu Y, Zha GW, Shang XJ, Yang S, Sun BQ, Ni HQ, Niu ZC. Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission. Natl Sci Rev 2017. [DOI: 10.1093/nsr/nwx042] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022] Open
Abstract
Abstract
In this chapter, we discuss the epitaxial growth of self-assembled quantum dots (QDs) in GaAs nanowires (NWs) and the characteristics of their single-photon emissions. We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/AlGaAs core–shell NWs, branched GaAs NWs and tailored nanostructured morphologies on the NW facets. Particularly, we show two new types of QD-in-NW systems: one is a single InAs QD formed at the corner of a branched GaAs NW, and the other is a single GaAs QD formed on the NW facet. Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability. Furthermore, a single GaAs QD is achieved at the site of a single AlGaAs quantum ring (QR) on the NW facet. In addition, these NW-based single QDs are in-situ probed and integrated with single-mode optical fibers to achieve all-fiber-output single-photon sources for potential application in quantum integrated networks.
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Affiliation(s)
- Ying Yu
- State Key laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of electronics and information technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Guo-Wei Zha
- State Key laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Xiang-Jun Shang
- State Key laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Shuang Yang
- State Key laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Ban-Quan Sun
- State Key laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Hai-Qiao Ni
- State Key laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Zhi-Chuan Niu
- State Key laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
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32
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Gregersen N, McCutcheon DPS, Mørk J, Gérard JM, Claudon J. A broadband tapered nanocavity for efficient nonclassical light emission. OPTICS EXPRESS 2016; 24:20904-20924. [PMID: 27607694 DOI: 10.1364/oe.24.020904] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We present the design of a tapered nanocavity, obtained by sandwiching a photonic wire section between a planar gold reflector and a few-period Bragg mirror integrated into the tapered wire. Thanks to its ultrasmall mode volume (0.71 λ3/n3), this hybrid nanocavity largely enhances the spontaneous emission rate of an embedded quantum dot (Purcell factor: 6), while offering a wide operation bandwidth (full-width half-maximum: 20 nm). In addition, the top tapered section shapes the cavity far-field emission into a very directive output beam, with a Gaussian spatial profile. For realistic taper dimensions, a total outcoupling efficiency to a Gaussian beam of 0.8 is predicted. Envisioned applications include bright sources of non-classical states of light, such as widely tunable sources of indistinguishable single photons and polarization-entangled photon pairs.
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33
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Chikkaraddy R, Patra PP, Tripathi RPN, Dasgupta A, Kumar GVP. Plasmon-controlled excitonic emission from vertically-tapered organic nanowires. NANOSCALE 2016; 8:14803-14808. [PMID: 27444822 DOI: 10.1039/c6nr02699k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Organic molecular nanophotonics has emerged as an important avenue to harness molecular aggregation and crystallization on various functional platforms to obtain nano-optical devices. To this end, there is growing interest to combine organic molecular nanostructures with plasmonic surfaces and interfaces. Motivated by this, herein we introduce a unique geometry: vertically-tapered organic nanowires grown on a plasmonic thin film. A polarization-sensitive plasmon-polariton on a gold thin-film was harnessed to control the exciton-polariton propagation and subsequent photoluminescence from an organic nanowire made of diaminoanthraquinone (DAAQ) molecules. We show that the exciton-polariton emission from individual DAAQ nanowires can be modulated up to a factor of 6 by varying the excitation polarization state of surface plasmons. Our observations were corroborated with full-wave three-dimensional finite-difference time-domain calculations performed on vertically-tapered nanowire geometry. Our work introduces a new optical platform to study coupling between propagating plasmons and propagating excitons, and may have implications in emerging fields such as hybrid-polariton based light emitting devices and vertical-cavity nano-optomechanics.
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Affiliation(s)
- Rohit Chikkaraddy
- Photonics and Optical Nanoscopy Laboratory, Department of Physics and Center for Energy Science, Indian Institute of Science Education and Research, Pune 411008, India.
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Mermillod Q, Jakubczyk T, Delmonte V, Delga A, Peinke E, Gérard JM, Claudon J, Kasprzak J. Harvesting, Coupling, and Control of Single-Exciton Coherences in Photonic Waveguide Antennas. PHYSICAL REVIEW LETTERS 2016; 116:163903. [PMID: 27152807 DOI: 10.1103/physrevlett.116.163903] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2015] [Indexed: 05/28/2023]
Abstract
We perform coherent nonlinear spectroscopy of individual excitons strongly confined in single InAs quantum dots (QDs). The retrieval of their intrinsically weak four-wave mixing (FWM) response is enabled by a one-dimensional dielectric waveguide antenna. Compared to a similar QD embedded in bulk media, the FWM detection sensitivity is enhanced by up to 4 orders of magnitude, over a broad operation bandwidth. Three-beam FWM is employed to investigate coherence and population dynamics within individual QD transitions. We retrieve their homogenous dephasing in a presence of low-frequency spectral wandering. Two-dimensional FWM reveals off-resonant Förster coupling between a pair of distinct QDs embedded in the antenna. We also detect a higher order QD nonlinearity (six-wave mixing) and use it to coherently control the FWM transient. Waveguide antennas enable us to conceive multicolor coherent manipulation schemes of individual emitters.
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Affiliation(s)
- Q Mermillod
- Univ. Grenoble Alpes, F-38000 Grenoble, France
- CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - T Jakubczyk
- Univ. Grenoble Alpes, F-38000 Grenoble, France
- CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - V Delmonte
- Univ. Grenoble Alpes, F-38000 Grenoble, France
- CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - A Delga
- Univ. Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - E Peinke
- Univ. Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - J-M Gérard
- Univ. Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - J Claudon
- Univ. Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - J Kasprzak
- Univ. Grenoble Alpes, F-38000 Grenoble, France
- CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
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35
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Ono M, Kuramochi E, Zhang G, Sumikura H, Harada Y, Cox D, Notomi M. Nanowire-nanoantenna coupled system fabricated by nanomanipulation. OPTICS EXPRESS 2016; 24:8647-8659. [PMID: 27137300 DOI: 10.1364/oe.24.008647] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Here we demonstrate the combination of a semiconductor nanowire and a plasmonic bowtie nanoantenna. A subwavelength InP nanowire was placed precisely in the middle of the nanogap of a gold bowtie nanoantenna with a nanomanipulator installed in a focused ion beam system. We observed a significantly large enhancement (by a factor of 110) of the photoluminescence intensity from this coupled system when the excitation wavelength was at the plasmonic resonance with its polarization parallel to the nanoantenna. Moreover, simulation results revealed that this large enhancement was caused by an interesting interplay between the plasmonic resonance of the nanoantenna and the breakdown of the field suppression effect in the subwavelength nanowire. Our results show that the combination of a nanowire and a nanoantenna gives us a new degree of freedom to design light-matter interactions on a nanoscale.
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36
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Wang W, Li BH, Stassen E, Mortensen NA, Christensen J. Localized surface plasmons in vibrating graphene nanodisks. NANOSCALE 2016; 8:3809-3815. [PMID: 26815600 DOI: 10.1039/c5nr08812g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Localized surface plasmons are confined collective oscillations of electrons in metallic nanoparticles. When driven by light, the optical response is dictated by geometrical parameters and the dielectric environment and plasmons are therefore extremely important for sensing applications. Plasmons in graphene disks have the additional benefit of being highly tunable via electrical stimulation. Mechanical vibrations create structural deformations in ways where the excitation of localized surface plasmons can be strongly modulated. We show that the spectral shift in such a scenario is determined by a complex interplay between the symmetry and shape of the modal vibrations and the plasmonic mode pattern. Tuning confined modes of light in graphene via acoustic excitations, paves new avenues in shaping the sensitivity of plasmonic detectors, and in the enhancement of the interaction with optical emitters, such as molecules, for future nanophotonic devices.
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Affiliation(s)
- Weihua Wang
- Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark.
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37
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Wu J, Ramsay A, Sanchez A, Zhang Y, Kim D, Brossard F, Hu X, Benamara M, Ware ME, Mazur YI, Salamo GJ, Aagesen M, Wang Z, Liu H. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate. NANO LETTERS 2016; 16:504-511. [PMID: 26666697 DOI: 10.1021/acs.nanolett.5b04142] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The III-V nanowire quantum dots (NWQDs) monolithically grown on silicon substrates, combining the advantages of both one- and zero-dimensional materials, represent one of the most promising technologies for integrating advanced III-V photonic technologies on a silicon microelectronics platform. However, there are great challenges in the fabrication of high-quality III-V NWQDs by a bottom-up approach, that is, growth by the vapor-liquid-solid method, because of the potential contamination caused by external metal catalysts and the various types of interfacial defects introduced by self-catalyzed growth. Here, we report the defect-free self-catalyzed III-V NWQDs, GaAs quantum dots in GaAsP nanowires, on a silicon substrate with pure zinc blende structure for the first time. Well-resolved excitonic emission is observed with a narrow line width. These results pave the way toward on-chip III-V quantum information and photonic devices on silicon platform.
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Affiliation(s)
- Jiang Wu
- Department of Electronic and Electrical Engineering, University College London , Torrington Place, London WC1E 7JE, United Kingdom
| | - Andrew Ramsay
- Hitachi Cambridge Laboratory, Hitachi Europe Ltd. , Cambridge CB3 0HE, United Kingdom
| | - Ana Sanchez
- Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom
| | - Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London , Torrington Place, London WC1E 7JE, United Kingdom
| | - Dongyoung Kim
- Department of Electronic and Electrical Engineering, University College London , Torrington Place, London WC1E 7JE, United Kingdom
| | - Frederic Brossard
- Hitachi Cambridge Laboratory, Hitachi Europe Ltd. , Cambridge CB3 0HE, United Kingdom
| | - Xian Hu
- Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States
| | - Mourad Benamara
- Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States
| | - Morgan E Ware
- Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States
| | - Yuriy I Mazur
- Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States
| | - Gregory J Salamo
- Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States
| | - Martin Aagesen
- Gasp Solar ApS , Gregersensvej 7, Taastrup DK-2630, Denmark
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China
| | - Huiyun Liu
- Department of Electronic and Electrical Engineering, University College London , Torrington Place, London WC1E 7JE, United Kingdom
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GAZZANO OLIVIER, SOLOMON GLENNS. Toward optical quantum information processing with quantum dots coupled to microstructures [Invited]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. B, OPTICAL PHYSICS 2016; 33:10.1364/josab.33.00c160. [PMID: 38881569 PMCID: PMC11177888 DOI: 10.1364/josab.33.00c160] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
Major improvements have been made on semiconductor quantum dot light sources recently and now they can be seen as a serious candidate for near-future scalable photonic quantum information processing experiments. The three key parameters of these photon sources for such applications have been pushed to extreme values: almost unity single-photon purity and photon indistinguishability, and high brightness. In this paper, we review the progress achieved recently on quantum-dot-based single-photon sources. We also review some quantum information experiments where entanglement processes are achieved using semiconductor quantum dots.
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Affiliation(s)
- OLIVIER GAZZANO
- Joint Quantum Institute, National Institute of Standards and Technology & University of Maryland, Gaithersburg, Maryland 20899,USA
| | - GLENN S. SOLOMON
- Joint Quantum Institute, National Institute of Standards and Technology & University of Maryland, Gaithersburg, Maryland 20899,USA
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39
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Anufriev R, Barakat JB, Patriarche G, Letartre X, Bru-Chevallier C, Harmand JC, Gendry M, Chauvin N. Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires. NANOTECHNOLOGY 2015; 26:395701. [PMID: 26349621 DOI: 10.1088/0957-4484/26/39/395701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The emission polarization of single InAs/InP quantum dot (QD) and quantum rod (QR) nanowires is investigated at room temperature. Whereas the emission of the QRs is mainly polarized parallel to the nanowire axis, the opposite behavior is observed for the QDs. These optical properties can be explained by a combination of dielectric effects related to the nanowire geometry and to the configuration of the valence band in the nanostructure. A theoretical model and finite difference in time domain calculations are presented to describe the impact of the nanowire and the surroundings on the optical properties of the emitter. Using this model, the intrinsic degree of linear polarization of the two types of emitters is extracted. The strong polarization anisotropies indicate a valence band mixing in the QRs but not in the QDs.
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Affiliation(s)
- Roman Anufriev
- Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, France
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40
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Lian H, Gu Y, Ren J, Zhang F, Wang L, Gong Q. Efficient single photon emission and collection based on excitation of gap surface plasmons. PHYSICAL REVIEW LETTERS 2015; 114:193002. [PMID: 26024170 DOI: 10.1103/physrevlett.114.193002] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2014] [Indexed: 06/04/2023]
Abstract
Combining the advantages of ultrahigh photon emission rates achievable in the gap surface plasmon polaritons with high extraction decay rates into low-loss nanofibers, we demonstrate theoretically the efficient photon emission of a single dipole emitter and one-dimensional nanoscale guiding in metallic nanorod-coupled nanofilm structures coupled to dielectric nanofibers. We find that total decay rates and surface plasmon polariton channel decay rates orders of magnitude larger than those characteristic of metallic nanofilms alone can be achieved in ultrastrong hot spots of gap plasmons. For the requirement of practical applications, propagating single photons with decay rates of 290γ_{0}-770γ_{0} are guided into the phase-matched low-loss nanofibers. The proposed mechanism promises to have an important impact on metal-based optical cavities, on-chip bright single photon sources and plasmon-based nanolasers.
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Affiliation(s)
- Hang Lian
- State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Ying Gu
- State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Juanjuan Ren
- State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Fan Zhang
- State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Luojia Wang
- State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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Foster AP, Bradley JP, Gardner K, Krysa AB, Royall B, Skolnick MS, Wilson LR. Linearly polarized emission from an embedded quantum dot using nanowire morphology control. NANO LETTERS 2015; 15:1559-1563. [PMID: 25674919 DOI: 10.1021/nl503933n] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
GaAs nanowires with elongated cross sections are formed using a catalyst-free growth technique. This is achieved by patterning elongated nanoscale openings within a silicon dioxide growth mask on a (111)B GaAs substrate. It is observed that MOVPE-grown vertical nanowires with cross section elongated in the [21̅1̅] and [1̅12] directions remain faithful to the geometry of the openings. An InGaAs quantum dot with weak radial confinement is realized within each nanowire by briefly introducing indium into the reactor during nanowire growth. Photoluminescence emission from an embedded nanowire quantum dot is strongly linearly polarized (typically >90%) with the polarization direction coincident with the axis of elongation. Linearly polarized PL emission is a result of embedding the quantum dot in an anisotropic nanowire structure that supports a single strongly confined, linearly polarized optical mode. This research provides a route to the bottom-up growth of linearly polarized single photon sources of interest for quantum information applications.
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Affiliation(s)
- Andrew P Foster
- Department of Physics and Astronomy, University of Sheffield , Sheffield S3 7RH, United Kingdom
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42
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Makhonin MN, Dixon JE, Coles RJ, Royall B, Luxmoore IJ, Clarke E, Hugues M, Skolnick MS, Fox AM. Waveguide coupled resonance fluorescence from on-chip quantum emitter. NANO LETTERS 2014; 14:6997-7002. [PMID: 25381734 DOI: 10.1021/nl5032937] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Resonantly driven quantum emitters offer a very promising route to obtain highly coherent sources of single photons required for applications in quantum information processing (QIP). Realizing this for on-chip scalable devices would be important for scientific advances and practical applications in the field of integrated quantum optics. Here we report on-chip quantum dot (QD) resonance fluorescence (RF) efficiently coupled into a single-mode waveguide, a key component of a photonic integrated circuit, with a negligible resonant laser background and show that the QD coherence is enhanced by more than a factor of 4 compared to off-resonant excitation. Single-photon behavior is confirmed under resonant excitation, and fast fluctuating charge dynamics are revealed in autocorrelation g((2)) measurements. The potential for triggered operation is verified in pulsed RF. These results pave the way to a novel class of integrated quantum-optical devices for on-chip quantum information processing with embedded resonantly driven quantum emitters.
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Affiliation(s)
- Maxim N Makhonin
- Department of Physics and Astronomy and ‡EPSRC National Centre for III-V Technologies, University of Sheffield , Sheffield S3 7RH, United Kingdom
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43
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Huber T, Predojević A, Khoshnegar M, Dalacu D, Poole PJ, Majedi H, Weihs G. Polarization entangled photons from quantum dots embedded in nanowires. NANO LETTERS 2014; 14:7107-7114. [PMID: 25395237 DOI: 10.1021/nl503581d] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
In this Letter, we present entanglement generated from a novel structure: a single InAsP quantum dot embedded in an InP nanowire. These structures can grow in a site-controlled way and exhibit high collection efficiency; we detect 0.5 million biexciton counts per second coupled into a single mode fiber with a standard commercial avalanche photo diode. If we correct for the known setup losses and detector efficiency, we get an extraction efficiency of 15(3) %. For the measured polarization entanglement, we observe a fidelity of 0.76(2) to a reference maximally entangled state as well as a concurrence of 0.57(6).
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Affiliation(s)
- Tobias Huber
- Institut für Experimentalphysik, Universität Innsbruck , Technikerstr. 25, 6020 Innsbruck, Austria
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44
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Observation of strongly entangled photon pairs from a nanowire quantum dot. Nat Commun 2014; 5:5298. [PMID: 25358656 PMCID: PMC4220459 DOI: 10.1038/ncomms6298] [Citation(s) in RCA: 71] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/02/2014] [Accepted: 09/18/2014] [Indexed: 12/23/2022] Open
Abstract
A bright photon source that combines high-fidelity entanglement, on-demand generation, high extraction efficiency, directional and coherent emission, as well as position control at the nanoscale is required for implementing ambitious schemes in quantum information processing, such as that of a quantum repeater. Still, all of these properties have not yet been achieved in a single device. Semiconductor quantum dots embedded in nanowire waveguides potentially satisfy all of these requirements; however, although theoretically predicted, entanglement has not yet been demonstrated for a nanowire quantum dot. Here, we demonstrate a bright and coherent source of strongly entangled photon pairs from a position-controlled nanowire quantum dot with a fidelity as high as 0.859±0.006 and concurrence of 0.80±0.02. The two-photon quantum state is modified via the nanowire shape. Our new nanoscale entangled photon source can be integrated at desired positions in a quantum photonic circuit, single-electron devices and light-emitting diodes. Semiconductor quantum dots embedded in nanowires are good candidates for the realization of a nearly ideal entangled photons source. Here, Versteegh et al. demonstrate emission of single-photon pairs from a position-controlled nanowire quantum dot without the need for temporal post-selection.
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45
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Jakubczyk T, Franke H, Smoleński T, Sciesiek M, Pacuski W, Golnik A, Schmidt-Grund R, Grundmann M, Kruse C, Hommel D, Kossacki P. Inhibition and enhancement of the spontaneous emission of quantum dots in micropillar cavities with radial-distributed Bragg reflectors. ACS NANO 2014; 8:9970-9978. [PMID: 25181393 DOI: 10.1021/nn5017555] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We present a micropillar cavity where nondesired radial emission is inhibited. The photonic confinement in such a structure is improved by implementation of an additional concentric radial-distributed Bragg reflector. Such a reflector increases the reflectivity in all directions perpendicular to the micropillar axis from a typical value of 15-31% to above 98%. An inhibition of the spontaneous emission of off-resonant excitonic states of quantum dots embedded in the microcavity is revealed by time-resolved experiments. It proves a decreased density of photonic states related to unwanted radial leakage of photons out of the micropillar. For on-resonance conditions, we find that the dot emission rate is increased, evidencing the Purcell enhancement of spontaneous emission. The proposed design can increase the efficiency of single-photon sources and bring to micropillar cavities the functionalities based on lengthened decay times.
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Affiliation(s)
- Tomasz Jakubczyk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw , Hoża 69, 00-681 Warsaw, Poland
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46
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Bulgarini G, Reimer ME, Bouwes Bavinck M, Jöns KD, Dalacu D, Poole PJ, Bakkers EPAM, Zwiller V. Nanowire waveguides launching single photons in a Gaussian mode for ideal fiber coupling. NANO LETTERS 2014; 14:4102-6. [PMID: 24926884 DOI: 10.1021/nl501648f] [Citation(s) in RCA: 50] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Quantum communication as well as integrated photonic circuits require single photons propagating in a well-defined Gaussian mode. However, tailoring the emission mode to a Gaussian remains an unsolved challenge for solid-state quantum emitters due to their random positioning in the host material or photonic structure. Here, we overcome these limitations by embedding a semiconductor quantum dot in a tapered nanowire waveguide. Owing to the deterministic positioning of the emitter in the waveguide, we demonstrate a Gaussian emission profile in the far field. Hence, we further couple the emission into a single-mode optical fiber with a record efficiency of 93%, thereby addressing a major hurdle for practical implementation of single photon sources in emerging photonic technologies.
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Affiliation(s)
- Gabriele Bulgarini
- Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
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47
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Motohisa J, Kohashi Y, Maeda S. Far-field emission patterns of nanowire light-emitting diodes. NANO LETTERS 2014; 14:3653-3660. [PMID: 24821257 DOI: 10.1021/nl501438r] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We investigated far-field (FF) emission patterns of nanowire light-emitting diodes (NW-LEDs). NW-LEDs were fabricated using vertical InP-NW arrays with axial pn-junctions grown on InP (111)A substrates, and the emission intensity of NW-LEDs was measured as a function of view angle θ, where θ = 0° indicates the direction normal to the substrate or that along the NWs. For NW arrays with pitch a of around 1 μm, we found a clear dip in the emission intensity at θ = 0°, which was explained by an analogy with dipole antenna, or a smaller contribution of the lowest order guided modes for emission as compared with higher order guided and free-space radiation modes. Results of the simulation of radiation patterns by the finite-difference time-domain method and near-field to far-field transformation are also described. They also confirm that the dip at θ = 0° is specific to light emission from NWs. We also investigated the dependence of the FF pattern on the pitch of the NW array, and the observation was qualitatively explained by the relative contribution of the guided and free-space radiation modes.
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Affiliation(s)
- Junichi Motohisa
- Graduate School of Information Science and Technology, Hokkaido University , North 14 West 9, Sapporo 060-0814, Japan
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48
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Birowosuto MD, Zhang G, Yokoo A, Takiguchi M, Notomi M. Spontaneous emission inhibition of telecom-band quantum disks inside single nanowire on different substrates. OPTICS EXPRESS 2014; 22:11713-11726. [PMID: 24921294 DOI: 10.1364/oe.22.011713] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We investigate the inhibited spontaneous emission of telecom-band InAs quantum disks (Qdisks) in InP nanowires (NWs). We have evaluated how the inhibition is affected by different disk diameter and thickness. We also compared the inhibition in standing InP NWs and those NWs laying on silica (SiO(2)), and silicon (Si) substrates. We found that the inhibition is altered when we put the NW on the high-refractive-index materials of Si. Experimentally, the inhibition factor ζ of the Qdisk emission at 1,500 nm decreases from 4.6 to 2.5 for NW on SiO(2) and Si substrates, respectively. Those inhibitions are even much smaller than that of 6.4 of the standing NW. The inhibition factors well agree with those calculated from the coupling of the Qdisk to the fundamental guided mode and the continuum of radiative modes. Our observation can be useful for the integration of the NW as light sources in the photonic nanodevices.
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49
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Yan WB, Fan H. Single-photon quantum router with multiple output ports. Sci Rep 2014; 4:4820. [PMID: 24769619 PMCID: PMC4001095 DOI: 10.1038/srep04820] [Citation(s) in RCA: 83] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2014] [Accepted: 04/09/2014] [Indexed: 11/16/2022] Open
Abstract
The routing capability is a requisite in quantum network. Although the quantum routing of signals has been investigated in various systems both in theory and experiment, the general form of quantum routing with many output terminals still needs to be explored. Here we propose a scheme to achieve the multi-channel quantum routing of the single photons in a waveguide-emitter system. The channels are composed by the waveguides and are connected by intermediate two-level emitters. By adjusting the intermediate emitters, the output channels of the input single photons can be controlled. This is demonstrated in the cases of one output channel, two output channels and the generic N output channels. The results show that the multi-channel quantum routing of single photons can be well achieved in the proposed system. This offers a scheme for the experimental realization of general quantum routing of single photons.
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Affiliation(s)
- Wei-Bin Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Heng Fan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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50
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Birowosuto MD, Yokoo A, Zhang G, Tateno K, Kuramochi E, Taniyama H, Takiguchi M, Notomi M. Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform. NATURE MATERIALS 2014; 13:279-285. [PMID: 24553654 DOI: 10.1038/nmat3873] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2013] [Accepted: 12/19/2013] [Indexed: 06/03/2023]
Abstract
Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light confinement or efficient coupling with photonic circuits is not straightforward and remains a challenge. Here we show that a high-Q nanocavity can be created by placing a single III–V semiconductor nanowire with a diameter of under 100 nm in a grooved waveguide in a Si photonic crystal, by means of nanoprobe manipulation. We observe very fast spontaneous emission (91 ps) from nanowires accelerated by the strong Purcell enhancement in nanocavities, which proves that very strong light confinement can be achieved. Furthermore, this system enables us to move the nanocavity anywhere along the waveguide. This configuration provides a significant degree of flexibility in integrated photonics and permits the addition and displacement of various functionalities of III–V nanocavity devices in Si photonic circuits.
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