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Yu J, Huang B, Yang S, Zhang Y, Bai Y, Song C, Ming W, Liu W, Wang J, Li C, Wang Q, Li J. Flexoelectric Engineering of Bulk Photovoltaic Photodetector. NANO LETTERS 2024; 24:6337-6343. [PMID: 38742772 DOI: 10.1021/acs.nanolett.4c01173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The bulk photovoltaic effect (BPVE) offers an interesting approach to generate a steady photocurrent in a single-phase material under homogeneous illumination, and it has been extensively investigated in ferroelectrics exhibiting spontaneous polarization that breaks inversion symmetry. Flexoelectricity breaks inversion symmetry via a strain gradient in the otherwise nonpolar materials, enabling manipulation of ferroelectric order without an electric field. Combining these two effects, we demonstrate active mechanical control of BPVE in suspended 2-dimensional CuInP2S6 (CIPS) that is ferroelectric yet sensitive to electric field, which enables practical photodetection with an order of magnitude enhancement in performance. The suspended CIPS exhibits a 20-fold increase in photocurrent, which can be continuously modulated by either mechanical force or light polarization. The flexoelectrically engineered photodetection device, activated by air pressure and without any optimization, possesses a responsivity of 2.45 × 10-2 A/W and a detectivity of 1.73 × 1011 jones, which are superior to those of ferroelectric-based photodetection and comparable to those of the commercial Si photodiode.
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Affiliation(s)
- Junxi Yu
- Institute for Advanced Study, Chengdu University, Chengdu 610100, People's Republic of China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Boyuan Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Songjie Yang
- Institute for Advanced Study, Chengdu University, Chengdu 610100, People's Republic of China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Yuan Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Yinxin Bai
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Chunlin Song
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Wenjie Ming
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Wenyuan Liu
- Institute of Flexible Electronics Technology of THU, Jiaxing, Zhejiang 314000, People's Republic of China
| | - Junling Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Changjian Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Qingyuan Wang
- Institute for Advanced Study, Chengdu University, Chengdu 610100, People's Republic of China
- Failure Mechanics and Engineering Disaster Prevention and Mitigation Key Laboratory of Sichuan Province, Sichuan University, Chengdu 610065, People's Republic of China
| | - Jiangyu Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
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Zhang F, Wang Z, Liu L, Nie A, Li Y, Gong Y, Zhu W, Tao C. Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In 2Se 3. Nat Commun 2024; 15:718. [PMID: 38267419 PMCID: PMC10808116 DOI: 10.1038/s41467-023-44642-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Accepted: 12/26/2023] [Indexed: 01/26/2024] Open
Abstract
Domain boundaries have been intensively investigated in bulk ferroelectric materials and two-dimensional materials. Many methods such as electrical, mechanical and optical approaches have been utilized to probe and manipulate domain boundaries. So far most research focuses on the initial and final states of domain boundaries before and after manipulation, while the microscopic understanding of the evolution of domain boundaries remains elusive. In this paper, we report controllable manipulation of the domain boundaries in two-dimensional ferroelectric In2Se3 with atomic precision using scanning tunneling microscopy. We show that the movements of the domain boundaries can be driven by the electric field from a scanning tunneling microscope tip and proceed by the collective shifting of atoms at the domain boundaries. Our density functional theory calculations reveal the energy path and evolution of the domain boundary movement. The results provide deep insight into domain boundaries in two-dimensional ferroelectric materials and will inspire inventive applications of these materials.
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Affiliation(s)
- Fan Zhang
- Department of Physics, Virginia Tech, Blacksburg, VA, 24061, USA
- Department of Physics, University of Texas at Austin, Austin, TX, 78712, USA
| | - Zhe Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Lixuan Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China
| | - Anmin Nie
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China
| | - Yanxing Li
- Department of Physics, University of Texas at Austin, Austin, TX, 78712, USA
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China.
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China.
| | - Chenggang Tao
- Department of Physics, Virginia Tech, Blacksburg, VA, 24061, USA.
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA.
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Guzelturk B, Yang T, Liu YC, Wei CC, Orenstein G, Trigo M, Zhou T, Diroll BT, Holt MV, Wen H, Chen LQ, Yang JC, Lindenberg AM. Sub-Nanosecond Reconfiguration of Ferroelectric Domains in Bismuth Ferrite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306029. [PMID: 37611614 DOI: 10.1002/adma.202306029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Revised: 07/28/2023] [Indexed: 08/25/2023]
Abstract
Domain switching is crucial for achieving desired functions in ferroic materials that are used in various applications. Fast control of domains at sub-nanosecond timescales remains a challenge despite its potential for high-speed operation in random-access memories, photonic, and nanoelectronic devices. Here, ultrafast laser excitation is shown to transiently melt and reconfigure ferroelectric stripe domains in multiferroic bismuth ferrite on a timescale faster than 100 picoseconds. This dynamic behavior is visualized by picosecond- and nanometer-resolved X-ray diffraction and time-resolved X-ray diffuse scattering. The disordering of stripe domains is attributed to the screening of depolarization fields by photogenerated carriers resulting in the formation of charged domain walls, as supported by phase-field simulations. Furthermore, the recovery of disordered domains exhibits subdiffusive growth on nanosecond timescales, with a non-equilibrium domain velocity reaching up to 10 m s-1 . These findings present a new approach to image and manipulate ferroelectric domains on sub-nanosecond timescales, which can be further extended into other complex photoferroic systems to modulate their electronic, optical, and magnetic properties beyond gigahertz frequencies. This approach could pave the way for high-speed ferroelectric data storage and computing, and, more broadly, defines new approaches for visualizing the non-equilibrium dynamics of heterogeneous and disordered materials.
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Affiliation(s)
- Burak Guzelturk
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Tiannan Yang
- Materials Research Institute, The Pennsylvania State University, University Park, PA, 16801, USA
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yu-Chen Liu
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Chia-Chun Wei
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Gal Orenstein
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Mariano Trigo
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Tao Zhou
- Nanoscience Science and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Benjamin T Diroll
- Nanoscience Science and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Martin V Holt
- Nanoscience Science and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Haidan Wen
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Long-Qing Chen
- Materials Research Institute, The Pennsylvania State University, University Park, PA, 16801, USA
| | - Jan-Chi Yang
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Aaron M Lindenberg
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Department of Photon Science, Stanford University and SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
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Bagri A, Jana A, Panchal G, Chowdhury S, Raj R, Kumar M, Gupta M, Reddy VR, Phase DM, Choudhary RJ. Light-Controlled Magnetoelastic Effects in Ni/BaTiO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18391-18401. [PMID: 37010892 DOI: 10.1021/acsami.2c21948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric-write magnetic-read memory devices. In ferromagnetic/ferroelectric heterostructures, the intertwined physical properties can be manipulated by an external perturbation, such as an electric field, temperature, or a magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under visible, coherent, and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructures reveals that the system shows strong sensitivity to the light illumination via the combined effect of piezoelectricity, ferroelectric polarization, spin imbalance, magnetostriction, and magnetoelectric coupling. A well-defined ferroelastic domain structure is fully transferred from a ferroelectric substrate to the magnetostrictive layer via interface strain transfer. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric substrates and consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence facilitating a perspective for room temperature spintronic device applications.
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Affiliation(s)
- Anita Bagri
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Anupam Jana
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Gyanendra Panchal
- Department Methods for Characterization of Transport Phenomena in Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin 14109, Germany
| | - Sourav Chowdhury
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Rakhul Raj
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Manish Kumar
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, South Korea
| | - Mukul Gupta
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | | | | | - Ram J Choudhary
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
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5
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You L, Abdelsamie A, Zhou Y, Chang L, Lim ZS, Wang J. Revisiting the Ferroelectric Photovoltaic Properties of Vertical BiFeO 3 Capacitors: A Comprehensive Study. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12070-12077. [PMID: 36825749 DOI: 10.1021/acsami.2c23023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The ferroelectric photovoltaic effect has been extensively studied for possible applications in energy conversion and photo-electrics. The reversible spontaneous polarization gives rise to a switchable photovoltaic behavior. However, despite its long history, the origin of the ferroelectric photovoltaic effect still lacks a full understanding since multiple mechanisms such as bulk and Schottky-barrier-related interface effects are involved. Herein, we report a comprehensive study on the photovoltaic response of BiFeO3-based vertical heterostructures, using multiple strategies to clarify its origin. We found that, under white light illumination, polarization-modulated Schottky barrier at the interface is the dominating mechanism. By varying the top metal contacts, only the photovoltaic effect of the polarization downward state is strongly modulated, suggesting selective interface contribution in different polarization states. A Schottky-barrier-free device shows negligible photovoltaic effect, suggesting the lack of bulk photovoltaic effect in vertical heterostructures under white light illumination.
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Affiliation(s)
- Lu You
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, 1 Shizi Street, Suzhou 215006, China
| | - Amr Abdelsamie
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Yang Zhou
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Lei Chang
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Zhi Shiuh Lim
- Physics Department, National University of Singapore, Block S12, #2 Science Drive 3, 117551 Singapore
| | - Junling Wang
- Department of Physics, Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
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6
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Nag R, Paul S, Bera A. A Type‐II Heterostructure with a KBiFe
2
O
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Brownmillerite Core and a ZnO Nanoparticle Shell for Enhanced Optoelectronic Performance. ChemistrySelect 2022. [DOI: 10.1002/slct.202202802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Riya Nag
- Department of Physics Midnapore College (Autonomous) Raja Bazar Main Rd 721101 Midnapore India
| | - Subir Paul
- School of Biological Sciences Indian Association for the Cultivation of Science 2A & 2B Raja S.C. Mallick Rd. Kolkata 700032 India
| | - Abhijit Bera
- Department of Physics Midnapore College (Autonomous) Raja Bazar Main Rd 721101 Midnapore India
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7
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Yu L, Wang L, Dou Y, Zhang Y, Li P, Li J, Wei W. Recent Advances in Ferroelectric Materials-Based Photoelectrochemical Reaction. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3026. [PMID: 36080063 PMCID: PMC9457969 DOI: 10.3390/nano12173026] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2022] [Revised: 08/28/2022] [Accepted: 08/29/2022] [Indexed: 06/15/2023]
Abstract
Inorganic perovskite ferroelectric-based nanomaterials as sustainable new energy materials, due to their intrinsic ferroelectricity and environmental compatibility, are intended to play a crucial role in photoelectrochemical field as major functional materials. Because of versatile physical properties and excellent optoelectronic properties, ferroelectric-based nanomaterials attract much attention in the field of photocatalysis, photoelectrochemical water splitting and photovoltaic. The aim of this review is to cover the recent advances by stating the different kinds of ferroelectrics separately in the photoelectrochemical field as well as discussing how ferroelectric polarization will impact functioning of photo-induced carrier separation and transportation in the interface of the compounded semiconductors. In addition, the future prospects of ferroelectric-based nanomaterials are also discussed.
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Affiliation(s)
- Limin Yu
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Lijing Wang
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Yanmeng Dou
- Shandong Yuhuang New Energy Technology Co., Ltd., Heze 274000, China
| | - Yongya Zhang
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Pan Li
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Jieqiong Li
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
| | - Wei Wei
- Henan Engineering Center of New Energy Battery Materials, Henan D&A Engineering Center of Advanced Battery Materials, Shangqiu Normal University, Shangqiu 476000, China
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Nonvolatile ferroelectric domain wall memory integrated on silicon. Nat Commun 2022; 13:4332. [PMID: 35882838 PMCID: PMC9325887 DOI: 10.1038/s41467-022-31763-w] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 07/01/2022] [Indexed: 11/30/2022] Open
Abstract
Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BaTiO3 films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories. Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.
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Effect of Nd and Mn Co-Doping on Dielectric, Ferroelectric and Photovoltaic Properties of BiFeO3. CRYSTALS 2022. [DOI: 10.3390/cryst12040500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Bi1−xNdxFe0.99Mn0.01O3 (BNFMO, x = 0.00~0.20) films were epitaxially grown on Nb:SrTiO3 (001) substrates using pulsed laser deposition. It was found that the Nd-doping concentration has a great impact on the surface morphology, crystal structure, and electrical properties. BNFMO thin film with low Nd-doping concentration (≤16%) crystallizes into a rhombohedral structure, while the high Nd-doping (>16%) will lead to the formation of an orthogonal structure. Furthermore, to eliminate the resistive switching (RS) effect, a positive-up–negative-down (PUND) measurement was applied on two devices in series. The remnant polarization experiences an increase with the Nd-doping concentration increasing to 16%, then drops down with the further increased concentration of Nd. Finally, the ferroelectric photovoltaic effect is also regulated by the ferroelectric polarization, and the maximum photocurrent of 1758 μA/cm2 was obtained in Bi0.84Nd0.16Fe0.99Mn0.01O3 thin film. BNFMO films show great potential for ferroelectric and photovoltaic applications.
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Wu H, Murti BT, Singh J, Yang P, Tsai M. Prospects of Metal-Free Perovskites for Piezoelectric Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104703. [PMID: 35199947 PMCID: PMC9036044 DOI: 10.1002/advs.202104703] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Revised: 01/14/2022] [Indexed: 06/14/2023]
Abstract
Metal-halide perovskites have emerged as versatile materials for various electronic and optoelectronic devices such as diodes, solar cells, photodetectors, and sensors due to their interesting properties of high absorption coefficient in the visible regime, tunable bandgap, and high power conversion efficiency. Recently, metal-free organic perovskites have also emerged as a particular class of perovskites materials for piezoelectric applications. This broadens the chemical variety of perovskite structures with good mechanical adaptability, light-weight, and low-cost processability. Despite these achievements, the fundamental understanding of the underlying phenomenon of piezoelectricity in metal-free perovskites is still lacking. Therefore, this perspective emphasizes the overview of piezoelectric properties of metal-halide, metal-free perovskites, and their recent progress which may encourage material designs to enhance their applicability towards practical applications. Finally, challenges and outlooks of piezoelectric metal-free perovskites are highlighted for their future developments.
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Affiliation(s)
- Han‐Song Wu
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City10607Taiwan
| | - Bayu Tri Murti
- Graduate Institute of Biomedical Materials and Tissue EngineeringTaipei Medical UniversityTaipei City11031Taiwan
- Department of Biomedical Sciences and EngineeringNational Central UniversityTaoyuan City32001Taiwan
| | - Jitendra Singh
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City10607Taiwan
| | - Po‐Kang Yang
- Department of Biomedical Sciences and EngineeringNational Central UniversityTaoyuan City32001Taiwan
- Graduate Institute of Nanomedicine and Medical EngineeringTaipei Medical UniversityTaipei City11031Taiwan
| | - Meng‐Lin Tsai
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City10607Taiwan
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11
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Yang W, Tian G, Fan H, Zhao Y, Chen H, Zhang L, Wang Y, Fan Z, Hou Z, Chen D, Gao J, Zeng M, Lu X, Qin M, Gao X, Liu JM. Nonvolatile Ferroelectric-Domain-Wall Memory Embedded in a Complex Topological Domain Structure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107711. [PMID: 34989455 DOI: 10.1002/adma.202107711] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2021] [Revised: 12/18/2021] [Indexed: 06/14/2023]
Abstract
The discovery and precise manipulation of atomic-size conductive ferroelectric domain walls offers new opportunities for a wide range of prospective electronic devices, and the emerging field of walltronics. Herein, a highly stable and fatigue-resistant nonvolatile memory device is demonstrated, which is based on deterministic creation and erasure of conductive domain walls that are geometrically confined in a topological domain structure. By introducing a pair of delicately designed coaxial electrodes onto the epitaxial BiFeO3 film, a center-type quadrant topological domain with conductive charged domain walls can be easily created. More importantly, reversible switching of the quadrant domain between the convergent state with highly conductive confined walls and the divergent state with insulating confined walls can be realized, resulting in an apparent resistance change with a large on/off ratio of >104 and a technically preferred readout current (up to 40 nA). Owing to restrictions from the clamped quadrant ferroelastic domain, the device exhibits excellent restoration repeatability over 108 cycles and a long retention of over 12 days (>106 s). These results provide a new pathway toward high-performance ferroelectric-domain-wall memory, which may spur extensive interest in exploring the immense potential in the emerging field of walltronics.
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Affiliation(s)
- Wenda Yang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Guo Tian
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Hua Fan
- The Department of Physics, Southern University of Science and Technology, Shenzhen, 518000, China
| | - Yue Zhao
- The Department of Physics, Southern University of Science and Technology, Shenzhen, 518000, China
| | - Hongying Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Luyong Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Yadong Wang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Jinwei Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Min Zeng
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Xubing Lu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Minghui Qin
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Jun-Ming Liu
- Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210093, China
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12
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Zhang F, Wang Z, Liu L, Nie A, Gong Y, Zhu W, Tao C. Atomic-Scale Visualization of Polar Domain Boundaries in Ferroelectric In 2Se 3 at the Monolayer Limit. J Phys Chem Lett 2021; 12:11902-11909. [PMID: 34878795 DOI: 10.1021/acs.jpclett.1c03251] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Domain boundaries in ferroelectric materials exhibit rich and diverse physical properties distinct from their parent materials and have been proposed for broad applications in nanoelectronics and quantum information technology. Due to their complexity and diversity, the internal atomic and electronic structure of domain boundaries that governs the electronic properties remains far from being elucidated. By using scanning tunneling microscopy and spectroscopy (STM/S) combined with density functional theory (DFT) calculations, we directly visualize the atomic structure of polar domain boundaries in two-dimensional (2D) ferroelectric β'-In2Se3 down to the monolayer limit. We observe a double-barrier energy potential with a width of about 3 nm across the 60° tail-to-tail domain boundaries in monolayer β'-In2Se3. The results will deepen our understanding of domain boundaries in 2D ferroelectric materials and stimulate innovative applications of these materials.
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Affiliation(s)
- Fan Zhang
- Department of Physics, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, United States
| | - Zhe Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lixuan Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao 066004, China
| | - Anmin Nie
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao 066004, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chenggang Tao
- Department of Physics, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, United States
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13
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Li Y, Fu J, Mao X, Chen C, Liu H, Gong M, Zeng H. Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP 2S 6. Nat Commun 2021; 12:5896. [PMID: 34625541 PMCID: PMC8501070 DOI: 10.1038/s41467-021-26200-3] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Accepted: 09/21/2021] [Indexed: 11/30/2022] Open
Abstract
The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottky barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progress has shown a promising route to surpass this limit via the bulk photovoltaic effect for crystals without inversion symmetry. Here we report the bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The bulk photovoltaic effect is inherently associated to the room-temperature polar ordering in two-dimensional CuInP2S6. We also demonstrate a crossover from two-dimensional to three-dimensional bulk photovoltaic effect with the observation of a dramatic decrease in photocurrent density when the thickness of the two-dimensional material exceeds the free path length at around 40 nm. This work spotlights the potential application of ultrathin two-dimensional ferroelectric materials for the third-generation photovoltaic cells.
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Affiliation(s)
- Yue Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Xiaoyu Mao
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Chen Chen
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Heng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Ming Gong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, 230026, Hefei, People's Republic of China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China.
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China.
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China.
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14
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Blázquez Martínez A, Godard N, Aruchamy N, Milesi-Brault C, Condurache O, Bencan A, Glinsek S, Granzow T. Solution-processed BiFeO3 thin films with low leakage current. Ann Ital Chir 2021. [DOI: 10.1016/j.jeurceramsoc.2021.05.051] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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15
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16
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Oxide and Organic–Inorganic Halide Perovskites with Plasmonics for Optoelectronic and Energy Applications: A Contributive Review. Catalysts 2021. [DOI: 10.3390/catal11091057] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
The ascension of halide perovskites as outstanding materials for a wide variety of optoelectronic applications has been reported in recent years. They have shown significant potential for the next generation of photovoltaics in particular, with a power conversion efficiency of 25.6% already achieved. On the other hand, oxide perovskites have a longer history and are considered as key elements in many technological applications; they have been examined in depth and applied in various fields, owing to their exceptional variability in terms of compositions and structures, leading to a large set of unique physical and chemical properties. As of today, a sound correlation between these two important material families is still missing, and this contributive review aims to fill this gap. We report a detailed analysis of the main functions and properties of oxide and organic–inorganic halide perovskite, emphasizing existing relationships amongst the specific performance and the structures.
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17
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Ahn Y, Everhardt AS, Lee HJ, Park J, Pateras A, Damerio S, Zhou T, DiChiara AD, Wen H, Noheda B, Evans PG. Dynamic Tilting of Ferroelectric Domain Walls Caused by Optically Induced Electronic Screening. PHYSICAL REVIEW LETTERS 2021; 127:097402. [PMID: 34506196 DOI: 10.1103/physrevlett.127.097402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2020] [Accepted: 06/25/2021] [Indexed: 06/13/2023]
Abstract
Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO_{3} thin film by an above-band-gap ultrafast optical pulse changes the tilt angle that 90° a/c domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved synchrotron x-ray scattering studies of the domain diffuse scattering. Tilting occurs at 298 K, a temperature at which the a/b and a/c domain phases coexist but is absent at 343 K in the better ordered single-phase a/c regime. Phase coexistence at 298 K leads to increased domain-wall charge density, and thus a larger screening effect than in the single-phase regime. The screening mechanism points to new directions for the manipulation of nanoscale ferroelectricity.
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Affiliation(s)
- Youngjun Ahn
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Arnoud S Everhardt
- Zernike Institute for Advanced Materials, University of Groningen, 9747AG- Groningen, Netherlands
| | - Hyeon Jun Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Joonkyu Park
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Anastasios Pateras
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Silvia Damerio
- Zernike Institute for Advanced Materials, University of Groningen, 9747AG- Groningen, Netherlands
| | - Tao Zhou
- ID01/ESRF, 71 Avenue des Martyrs, 38000 Grenoble Cedex, France
| | - Anthony D DiChiara
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Haidan Wen
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Beatriz Noheda
- Zernike Institute for Advanced Materials, University of Groningen, 9747AG- Groningen, Netherlands
- CogniGron Center, University of Groningen, 9747AG- Groningen, Netherlands
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
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18
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LnFe0.5Cr0.5O3 based perovskites showing multiferroic properties and polarization induced photoelectrochemical activity. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122200] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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19
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Rubio-Marcos F, Del Campo A, Ordoñez-Pimentel J, Venet M, Rojas-Hernandez RE, Páez-Margarit D, Ochoa DA, Fernández JF, García JE. Photocontrolled Strain in Polycrystalline Ferroelectrics via Domain Engineering Strategy. ACS APPLIED MATERIALS & INTERFACES 2021; 13:20858-20864. [PMID: 33881295 PMCID: PMC8480775 DOI: 10.1021/acsami.1c03162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/17/2021] [Accepted: 04/08/2021] [Indexed: 06/12/2023]
Abstract
The use of photonic concepts to achieve nanoactuation based on light triggering requires complex architectures to obtain the desired effect. In this context, the recent discovery of reversible optical control of the domain configuration in ferroelectrics offers a light-ferroic interplay that can be easily controlled. To date, however, the optical control of ferroelectric domains has been explored in single crystals, although polycrystals are technologically more desirable because they can be manufactured in a scalable and reproducible fashion. Here we report experimental evidence for a large photostrain response in polycrystalline BaTiO3 that is comparable to their electrostrain values. Domains engineering is performed through grain size control, thereby evidencing that charged domain walls appear to be the functional interfaces for the light-driven domain switching. The findings shed light on the design of high-performance photoactuators based on ferroelectric ceramics, providing a feasible alternative to conventional voltage-driven nanoactuators.
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Affiliation(s)
- Fernando Rubio-Marcos
- Department
of Electroceramics, Instituto de Cerámica
y Vidrio, CSIC, Madrid 28049, Spain
| | - Adolfo Del Campo
- Department
of Electroceramics, Instituto de Cerámica
y Vidrio, CSIC, Madrid 28049, Spain
| | - Jonathan Ordoñez-Pimentel
- Department
of Physics, Universitat Politècnica
de Catalunya, BarcelonaTech, Barcelona 08034, Spain
- Department
of Physics, Universidade Federal de Sao
Carlos, Sao Carlos 13565-905, Brazil
| | - Michel Venet
- Department
of Physics, Universidade Federal de Sao
Carlos, Sao Carlos 13565-905, Brazil
| | | | - David Páez-Margarit
- Department
of Physics, Universitat Politècnica
de Catalunya, BarcelonaTech, Barcelona 08034, Spain
| | - Diego A. Ochoa
- Department
of Physics, Universitat Politècnica
de Catalunya, BarcelonaTech, Barcelona 08034, Spain
| | - José F. Fernández
- Department
of Electroceramics, Instituto de Cerámica
y Vidrio, CSIC, Madrid 28049, Spain
| | - Jose E. García
- Department
of Physics, Universitat Politècnica
de Catalunya, BarcelonaTech, Barcelona 08034, Spain
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20
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Lehmann AG, Congiu F, Marongiu D, Mura A, Filippetti A, Mattoni A, Saba M, Pegna G, Sarritzu V, Quochi F, Bongiovanni G. Long-lived electrets and lack of ferroelectricity in methylammonium lead bromide CH 3NH 3PbBr 3 ferroelastic single crystals. Phys Chem Chem Phys 2021; 23:3233-3245. [PMID: 33465210 DOI: 10.1039/d0cp05918h] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Hybrid lead halides CH3NH3PbX3 (X = I, Br, and Cl) have emerged as a new class of semiconductors for low-cost optoelectronic devices with superior performance. Since their perovskite crystal structure may have lattice instabilities against polar distortions, they are also being considered as potential photo-ferroelectrics. However, so far, research on their ferroelectricity has yielded inconclusive results and the subject is far from being settled. Here, we investigate, using a combined experimental and theoretical approach, the possible presence of electric polarization in tetragonal and orthorhombic CH3NH3PbBr3 (T-MAPB and O-MAPB). We found that T-MAPB does not sustain spontaneous polarization but, under an external electric field, it is projected into a metastable, ionic space-charge electret state. The electret can be frozen on cooling, producing a large and long-lasting polarization in O-MAPB. Molecular dynamics simulations show that the ferroelastic domain boundaries are able to trap charges and segregate ionic point defects, thus playing a favorable role in the stabilization of the electret. At lower temperatures, the lack of ferroelectric behavior is explained using first principles calculations as the result of the tight competition among many metastable states with randomly oriented polarization; this large configurational entropy does not allow a single polar state to dominate at any significant temperature range.
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21
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Chen S, Yuan S, Hou Z, Tang Y, Zhang J, Wang T, Li K, Zhao W, Liu X, Chen L, Martin LW, Chen Z. Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000857. [PMID: 32815214 DOI: 10.1002/adma.202000857] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Revised: 04/17/2020] [Indexed: 06/11/2023]
Abstract
Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.
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Affiliation(s)
- Shanquan Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Shuai Yuan
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Jinping Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Tao Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Kang Li
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Weiwei Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xingjun Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
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22
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Lau B, Kedem O. Electron ratchets: State of the field and future challenges. J Chem Phys 2020; 152:200901. [DOI: 10.1063/5.0009561] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Bryan Lau
- Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, New York 10010, USA
| | - Ofer Kedem
- Department of Chemistry, Marquette University, Milwaukee, Wisconsin 53233, USA
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23
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Belhadi J, Yousfi S, El Marssi M, Arnold DC, Bouyanfif H. Tailoring the photovoltaic effect in (1 1 1) oriented BiFeO 3/LaFeO 3 superlattices. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:135301. [PMID: 31791017 DOI: 10.1088/1361-648x/ab5e11] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Ferroelectric and photovoltaic properties of (BiFeO3)(1-x)Λ/(LaFeO3) xΛ superlattices grown by pulsed laser deposition have been investigated (Λ being the bilayer thickness). For a high concentration of BiFeO3 a ferroelectric state is observed simultaneously with a switchable photovoltaic response. In contrast for certain concentration of LaFeO3 a non-switchable photovoltaic effect is evidenced. Such modulation of the PV response in the superlattices is attributed to the ferroelectric to paraelectric phase transition which is controlled with the increase of x. Remarkably, concomitant to this change of PV mechanism, a change of the conduction mechanism also seems to take place from a bulk-limited to an interface-limited transport as x increases.
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Affiliation(s)
- J Belhadi
- LPMC EA2081, Université de Picardie Jules Verne, 33 Rue Saint Leu, 80000 Amiens, France
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24
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Cheng XR, Kuang XY, Cheng H, Tian H, Yang SM, Yu M, Dou XL, Mao AJ. Strain-induced structural phase transition, electric polarization and unusual electric properties in photovoltaic materials CsMI 3 (M = Pb, Sn). RSC Adv 2020; 10:12432-12438. [PMID: 35497588 PMCID: PMC9051086 DOI: 10.1039/c9ra10791f] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/21/2019] [Accepted: 03/18/2020] [Indexed: 01/24/2023] Open
Abstract
The structural phase transition, ferroelectric polarization, and electric properties have been investigated for photovoltaic films CsMI3 (M = Pb, Sn) epitaxially grown along (001) direction based on the density functional theory. The calculated results indicate that the phase diagrams of two epitaxial CsPbI3 and CsSnI3 films are almost identical, except critical transition strains varying slightly. The epitaxial tensile strains induce two ferroelectric phases Pmc21, and Pmn21, while the compressive strains drive two paraelectric phases P212121, P21212. The larger compressive strain enhances the ferroelectric instability in these two films, eventually rendering them another ferroelectric state Pc. Whether CsPbI3 or CsSnI3, the total polarization of Pmn21 phase comes from the main contribution of B-position cations (Pb or Sn), whereas, for Pmc21 phase, the main contributor is the I ion. Moreover, the epitaxial strain effects on antiferrodistortive vector, polarization and band gap of CsMI3 (M = Pb, Sn) are further discussed. Unusual electronic properties under epitaxial strains are also revealed and interpreted.
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Affiliation(s)
- Xiao-Rong Cheng
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Xiao-Yu Kuang
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Hao Cheng
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Hao Tian
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Department of Materials Science and Engineering, Nanjing University Nanjing 210093 China .,Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University Nanjing 210093 China
| | - Si-Min Yang
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Miao Yu
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Xi-Long Dou
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Ai-Jie Mao
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
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25
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Guzelturk B, Mei AB, Zhang L, Tan LZ, Donahue P, Singh AG, Schlom DG, Martin LW, Lindenberg AM. Light-Induced Currents at Domain Walls in Multiferroic BiFeO 3. NANO LETTERS 2020; 20:145-151. [PMID: 31746607 DOI: 10.1021/acs.nanolett.9b03484] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Multiferroic BiFeO3 (BFO) films with spontaneously formed periodic stripe domains can generate above-gap open circuit voltages under visible light illumination; nevertheless the underlying mechanism behind this intriguing optoelectronic response has not been understood to date. Here, we make contact-free measurements of light-induced currents in epitaxial BFO films via detecting terahertz radiation emanated by these currents, enabling a direct probe of the intrinsic charge separation mechanisms along with quantitative measurements of the current amplitudes and their directions. In the periodic stripe samples, we find that the net photocurrent is dominated by the charge separation across the domain walls, whereas in the monodomain samples the photovoltaic response arises from a bulk shift current associated with the non-centrosymmetry of the crystal. The peak current amplitude driven by the charge separation at the domain walls is found to be 2 orders of magnitude higher than the bulk shift current response, indicating the prominent role of domain walls acting as nanoscale junctions to efficiently separate photogenerated charges in the stripe domain BFO films. These findings show that domain-wall-engineered BFO thin films offer exciting prospects for ferroelectric-based optoelectronics, as well as bias-free strong terahertz emitters.
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Affiliation(s)
- Burak Guzelturk
- Department of Materials Science and Engineering , Stanford University , Stanford , California 94305 , United States
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
| | - Antonio B Mei
- Department of Materials Science and Engineering and Kavli Institute at Cornell for Nanoscale Science , Cornell University , Ithaca , New York 14853 , United States
| | - Lei Zhang
- Department of Materials Science and Engineering , University of California Berkeley , Berkeley , California 94720 , United States
| | | | - Patrick Donahue
- Department of Materials Science and Engineering , University of California Berkeley , Berkeley , California 94720 , United States
| | - Anisha G Singh
- Department of Applied Physics , Stanford University , Stanford , California 94305 , United States
| | - Darrell G Schlom
- Department of Materials Science and Engineering and Kavli Institute at Cornell for Nanoscale Science , Cornell University , Ithaca , New York 14853 , United States
| | - Lane W Martin
- Department of Materials Science and Engineering , University of California Berkeley , Berkeley , California 94720 , United States
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering , Stanford University , Stanford , California 94305 , United States
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
- The PULSE Institute for Ultrafast Energy Science , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
- Department of Photon Science , Stanford University and SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
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26
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Yin L, Mi W. Progress in BiFeO 3-based heterostructures: materials, properties and applications. NANOSCALE 2020; 12:477-523. [PMID: 31850428 DOI: 10.1039/c9nr08800h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.
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Affiliation(s)
- Li Yin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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Li L, Xie L, Pan X. Real-time studies of ferroelectric domain switching: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:126502. [PMID: 31185460 DOI: 10.1088/1361-6633/ab28de] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.
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Affiliation(s)
- Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, United States of America
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Bein NS, Machado P, Coll M, Chen F, Makarovic M, Rojac T, Klein A. Electrochemical Reduction of Undoped and Cobalt-Doped BiFeO 3 Induced by Water Exposure: Quantitative Determination of Reduction Potentials and Defect Energy Levels Using Photoelectron Spectroscopy. J Phys Chem Lett 2019; 10:7071-7076. [PMID: 31664832 DOI: 10.1021/acs.jpclett.9b02706] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The interaction of BiFeO3 and Co-doped BiFeO3 thin-film surfaces with water vapor is examined using photoelectron spectroscopy. Water exposure results in an upward shift of the Fermi energy, which is limited by the reduction of Bi and Fe in undoped BiFeO3 and by the reduction of Co in oxidized Co-doped BiFeO3. The results highlight the importance of surface potential changes induced by the interaction of solid surfaces with water and the ability of photoelectron spectroscopy to quantitatively determine electrochemical reduction potentials and defect energy levels.
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Affiliation(s)
- Nicole S Bein
- Department of Materials and Earth Sciences, Electronic Structure of Materials , Technische Universität Darmstadt , Otto-Berndt-Straße 3 , 64287 Darmstadt , Germany
| | - Pamela Machado
- Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC , 08193 Barcelona , Spain
| | - Mariona Coll
- Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC , 08193 Barcelona , Spain
| | - Feng Chen
- High Magnetic Field Lab , Hefei Institutes of Physical Science, Chinese Academy of Sciences (CAS) , Hefei 230031 , China
| | - Maja Makarovic
- Electronic Ceramics , Jozef Stefan Institute , Jamova 39 , 1000 Ljubljana , Slovenia
| | - Tadej Rojac
- Electronic Ceramics , Jozef Stefan Institute , Jamova 39 , 1000 Ljubljana , Slovenia
| | - Andreas Klein
- Department of Materials and Earth Sciences, Electronic Structure of Materials , Technische Universität Darmstadt , Otto-Berndt-Straße 3 , 64287 Darmstadt , Germany
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Pandey R, Vats G, Yun J, Bowen CR, Ho-Baillie AWY, Seidel J, Butler KT, Seok SI. Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807376. [PMID: 31441161 DOI: 10.1002/adma.201807376] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2018] [Revised: 03/23/2019] [Indexed: 06/10/2023]
Abstract
An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high-efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo-, pyro-, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects.
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Affiliation(s)
- Richa Pandey
- Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Powai, 400076, India
| | - Gaurav Vats
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jae Yun
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Chris R Bowen
- Materials Research Centre, Department of Mechanical Engineering, University of Bath, Bath, BA2 7AY, UK
| | - Anita W Y Ho-Baillie
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Keith Tobias Butler
- ISIS Facility, Rutherford Appleton Laboratory, Harwell Oxford Didcot, Oxfordshire, OX11 0QX, UK
| | - Sang Il Seok
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST) UNIST-gil 50, Ulsan, 44919, South Korea
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Functional Ferroic Domain Walls for Nanoelectronics. MATERIALS 2019; 12:ma12182927. [PMID: 31510049 PMCID: PMC6766344 DOI: 10.3390/ma12182927] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2019] [Revised: 09/05/2019] [Accepted: 09/06/2019] [Indexed: 11/17/2022]
Abstract
A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.
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31
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Belhadi J, Ruvalcaba J, Yousfi S, El Marssi M, Cordova T, Matzen S, Lecoeur P, Bouyanfif H. Conduction mechanism and switchable photovoltaic effect in (1 1 1) oriented BiFe 0.95Mn 0.05O 3 thin film. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:275701. [PMID: 30939455 DOI: 10.1088/1361-648x/ab157e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Epitaxial 200 nm BiFe0.95Mn0.05O3 (BFO) film was grown by pulsed laser deposition (PLD) on (1 1 1) oriented SrTiO3 substrate buffered with a 50 nm thick SrRuO3 electrode. The BFO thin film shows a rhombohedral structure and a large remnant polarization of Pr = 104 µC cm-2. By comparing I(V) characteristics with different conduction models we reveal the presence of both bulk limited Poole-Frenkel and Schottky interface mechanisms and each one dominates in a specific range of temperature. At room temperature (RT) and under 10 mW laser illumination, the as grown BFO film presents short-circuit current density (J sc) and open circuit voltage (V oc) of 2.25 mA cm-2 and -0.55 V respectively. This PV effect can be switched by applying positive voltage pulses higher than the coercive field. For low temperatures a large V oc value of about -4.5 V (-225 kV cm-1) is observed which suggests a bulk non-centrosymmetric origin of the PV response.
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Affiliation(s)
- J Belhadi
- LPMC EA2081, Université de Picardie Jules Verne, 33 Rue Saint Leu, 80000 Amiens, France
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Tian G, Yang W, Chen D, Fan Z, Hou Z, Alexe M, Gao X. Topological domain states and magnetoelectric properties in multiferroic nanostructures. Natl Sci Rev 2019; 6:684-702. [PMID: 34691923 PMCID: PMC8291546 DOI: 10.1093/nsr/nwz100] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2019] [Revised: 07/07/2019] [Accepted: 07/12/2019] [Indexed: 11/21/2022] Open
Abstract
Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges too. In this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.
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Affiliation(s)
- Guo Tian
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wenda Yang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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33
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Sha TT, Xiong YA, Pan Q, Chen XG, Song XJ, Yao J, Miao SR, Jing ZY, Feng ZJ, You YM, Xiong RG. Fluorinated 2D Lead Iodide Perovskite Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901843. [PMID: 31169938 DOI: 10.1002/adma.201901843] [Citation(s) in RCA: 80] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2019] [Revised: 04/30/2019] [Indexed: 06/09/2023]
Abstract
Hybrid perovskite materials are famous for their great application potential in photovoltaics and optoelectronics. Among them, lead-iodide-based perovskites receive great attention because of their good optical absorption ability and excellent electrical transport properties. Although many believe the ferroelectric photovoltaic effect (FEPV) plays a crucial role for the high conversion efficiency, the ferroelectricity in CH3 NH3 PbI3 is still under debate, and obtaining ferroelectric lead iodide perovskites is still challenging. In order to avoid the randomness and blindness in the conventional method of searching for perovskite ferroelectrics, a design strategy of fluorine modification is developed. As a demonstration, a nonpolar lead iodide perovskite is modified and a new 2D fluorinated layered hybrid perovskite material of (4,4-difluorocyclohexylammonium)2 PbI4 , 1, is obtained, which possesses clear ferroelectricity with controllable spontaneous polarization. The direct bandgap of 2.38 eV with strong photoluminescence also guarantees the direct observation of polarization-induced FEPV. More importantly, the 2D structure and fluorination are also expected to achieve both good stability and charge transport properties. 1 is not only a 2D fluorinated lead iodide perovskite with confirmed ferroelectricity, but also a great platform for studying the effect of ferroelectricity and FEPV in the context of lead halide perovskite solar cells and other optoelectronic applications.
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Affiliation(s)
- Tai-Ting Sha
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Yu-An Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Qiang Pan
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Xiao-Gang Chen
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Xian-Jiang Song
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Jie Yao
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Shu-Rong Miao
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Zheng-Yin Jing
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Zi-Jie Feng
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Yu-Meng You
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
| | - Ren-Gen Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China
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Rubio-Marcos F, Páez-Margarit D, Ochoa DA, Del Campo A, Fernández JF, García JE. Photo-Controlled Ferroelectric-Based Nanoactuators. ACS APPLIED MATERIALS & INTERFACES 2019; 11:13921-13926. [PMID: 30938502 DOI: 10.1021/acsami.9b01628] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Finding a feasible principle for a future generation of nano-optomechanical systems is a matter of intensive research, because it may provide new device prospects for optoelectronics and nanomanipulation techniques. Here we show that the strain of a ferroelectric crystal can be manipulated to achieve macroscopic, stable, and reproducible dimensional changes using illumination with photon energy below the material bandgap. The photoresponse can be activated without direct light incidence on the actuation area, because the cooperative nature of the phenomenon extends the photoinduced strain to the whole material. These results may be useful for developing the next generation of high-efficiency photocontrolled ferroelectric devices.
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Affiliation(s)
- Fernando Rubio-Marcos
- Department of Electroceramics , Instituto de Cerámica y Vidrio (CSIC) , Madrid 28049 , Spain
| | - David Páez-Margarit
- Department of Physics , Universitat Politècnica de Catalunya-BarcelonaTech , Barcelona 08034 , Spain
| | - Diego A Ochoa
- Department of Physics , Universitat Politècnica de Catalunya-BarcelonaTech , Barcelona 08034 , Spain
| | - Adolfo Del Campo
- Department of Electroceramics , Instituto de Cerámica y Vidrio (CSIC) , Madrid 28049 , Spain
| | - José F Fernández
- Department of Electroceramics , Instituto de Cerámica y Vidrio (CSIC) , Madrid 28049 , Spain
| | - José E García
- Department of Physics , Universitat Politècnica de Catalunya-BarcelonaTech , Barcelona 08034 , Spain
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36
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Nadupalli S, Kreisel J, Granzow T. Increasing bulk photovoltaic current by strain tuning. SCIENCE ADVANCES 2019; 5:eaau9199. [PMID: 30838328 PMCID: PMC6397022 DOI: 10.1126/sciadv.aau9199] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2018] [Accepted: 01/23/2019] [Indexed: 05/20/2023]
Abstract
Photovoltaic phenomena are widely exploited not only for primary energy generation but also in photocatalytic, photoelectrochemistry, or optoelectronic applications. In contrast to the interface-based photovoltaic effect of semiconductors, the anomalous or bulk photovoltaic effect in ferroelectrics is not bound by the Shockley-Queisser limit and, thus, can potentially reach high efficiencies. Here, we observe in the example of an Fe-doped LiNbO3 bulk single crystal the existence of a purely intrinsic "piezophotovoltaic" effect that leads to a linear increase in photovoltaic current density. The increase reaches 75% under a low uniaxial compressive stress of 10 MPa, corresponding to a strain of only 0.005%. The physical origin and symmetry properties of the effect are investigated, and its potential for strain-tuned efficiency increase in nonconventional photovoltaic materials is presented.
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Affiliation(s)
- Shankari Nadupalli
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Jens Kreisel
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
- Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, 4422 Belvaux, Luxembourg
| | - Torsten Granzow
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
- Corresponding author.
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Bennett-Jackson AL, Falmbigl M, Hantanasirisakul K, Gu Z, Imbrenda D, Plokhikh AV, Will-Cole A, Hatter C, Wu L, Anasori B, Gogotsi Y, Spanier JE. van der Waals epitaxy of highly (111)-oriented BaTiO 3 on MXene. NANOSCALE 2019; 11:622-630. [PMID: 30560967 DOI: 10.1039/c8nr07140c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report on the high temperature thin film growth of BaTiO3 on Ti3C2Tx MXene flakes using van der Waals epitaxy on a degradable template layer. MXene was deposited on amorphous and crystalline substrates by spray- and dip-coating techniques, while the growth of BaTiO3 at 700 °C was accomplished using pulsed laser deposition in an oxygen rich environment. We demonstrate that the MXene flakes act as a temporary seed layer, which promotes highly oriented BaTiO3 growth along the (111) direction independent of the underlying substrate. The lattice parameters of the BaTiO3 films are close to the bulk value suggesting that the BaTiO3 films remains unstrained, as expected for van der Waals epitaxy. The initial size of the MXene flakes has an impact on the orientation of the BaTiO3 films with larger flake sizes promoting a higher fraction of the polycrystalline film to grow along the (111) direction. The deposited BaTiO3 film adopts the same morphology as the original flakes and piezoresponse force microscopy shows a robust ferroelectric behavior for individual grains. Transmission electron microscopy results indicate that the Ti3C2Tx MXene fully decomposes during the BaTiO3 deposition and the surplus Ti atoms are readily incorporated into the BaTiO3 film. Electrical measurements show a similar dielectric constant as a BaTiO3 film grown without the MXene seed layer. The demonstrated process has the potential to overcome the longstanding issue of integrating highly oriented complex oxide thin films directly on any desired substrate.
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Liu X, Zhang F, Long P, Lu T, Zeng H, Liu Y, Withers RL, Li Y, Yi Z. Anomalous Photovoltaic Effect in Centrosymmetric Ferroelastic BiVO 4. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801619. [PMID: 30589463 DOI: 10.1002/adma.201801619] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2018] [Revised: 05/21/2018] [Indexed: 06/09/2023]
Abstract
The anomolous photovoltaic (APV) effect is an intriguing phenomenon and rarely observed in bulk materials that structurally have an inversion symmetry. Here, the discovery of such an APV effect in a centrosymmetric vanadate, BiVO4, where noticeable above-bandgap photovoltage and a steady-state photocurrent are observed in both ceramics and single crystals even when illuminated under visible light, is reported. Moreover, the photovoltaic voltage can be reversed by the stress modulation, and a sine-function relationship between the photovoltage and stress directional angle is derived. Microstructure and strain-field analysis reveal localized asymmetries that are caused by strain fluctuations in bulk centrosymmetric BiVO4. On the basis of the experimental results, a flexoelectric coupling via a strain-induced local polarization mechanism is suggested to account for the APV effect observed. This work not only allows new applications for BiVO4 in optoelectronic devices but also deepens insights into the mechanisms underlying the APV effect.
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Affiliation(s)
- Xitao Liu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures & Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
| | - Faqiang Zhang
- CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Peiqing Long
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures & Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
| | - Teng Lu
- Research School of Chemistry, The Australian National University, Canberra, ACT, 2601, Australia
| | - Huarong Zeng
- CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yun Liu
- Research School of Chemistry, The Australian National University, Canberra, ACT, 2601, Australia
| | - Ray L Withers
- Research School of Chemistry, The Australian National University, Canberra, ACT, 2601, Australia
| | - Yongxiang Li
- CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhiguo Yi
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures & Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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39
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Hu L, Jin W, Feng R, Zaheer M, Nie Q, Chen G, Qiu ZJ, Cong C, Liu R. Photovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor Interfaces. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E1530. [PMID: 30149604 PMCID: PMC6163970 DOI: 10.3390/ma11091530] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/31/2018] [Revised: 08/04/2018] [Accepted: 08/21/2018] [Indexed: 06/08/2023]
Abstract
Photoinduced space-charges in organic optoelectronic devices, which are usually caused by poor mobility and charge injection imbalance, always limit the device performance. Here we demonstrate that photoinduced space-charge layers, accumulated at organic semiconductor-insulator interfaces, can also play a role for photocurrent generation. Photocurrent transients from organic devices, with insulator-semiconductor interfaces, were systematically studied by using the double-layer model with an equivalent circuit. Results indicated that the electric fields in photoinduced space-charge layers can be utilized for charge generation and can even induce a photovoltage reversal. Such an operational process of light harvesting would be promising for photoelectric conversion in organic devices.
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Affiliation(s)
- Laigui Hu
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Wei Jin
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Rui Feng
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Muhammad Zaheer
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Qingmiao Nie
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China.
| | - Guoping Chen
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Zhi-Jun Qiu
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Chunxiao Cong
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Ran Liu
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
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40
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Quattropani A, Makhort AS, Rastei MV, Versini G, Schmerber G, Barre S, Dinia A, Slaoui A, Rehspringer JL, Fix T, Colis S, Kundys B. Tuning photovoltaic response in Bi 2FeCrO 6 films by ferroelectric poling. NANOSCALE 2018; 10:13761-13766. [PMID: 29993081 DOI: 10.1039/c8nr03137a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Ferroelectric materials are interesting candidates for future photovoltaic applications due to their potential to overcome the fundamental limits of conventional single bandgap semiconductor-based solar cells. Although a more efficient charge separation and above bandgap photovoltages are advantageous in these materials, tailoring their photovoltaic response using ferroelectric functionalities remains puzzling. Here we address this issue by reporting a clear hysteretic character of the photovoltaic effect as a function of electric field and its dependence on the poling history. Furthermore, we obtain insight into light induced nonequilibrium charge carrier dynamics in Bi2FeCrO6 films involving not only charge generation, but also recombination processes. At the ferroelectric remanence, light is able to electrically depolarize the films with remanent and transient effects as evidenced by electrical and piezoresponse force microscopy (PFM) measurements. The hysteretic nature of the photovoltaic response and its nonlinear character at larger light intensities can be used to optimize the photovoltaic performance of future ferroelectric-based solar cells.
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Han H, Kim D, Chae S, Park J, Nam SY, Choi M, Yong K, Kim HJ, Son J, Jang HM. Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO 3 thin films. NANOSCALE 2018; 10:13261-13269. [PMID: 29971282 DOI: 10.1039/c7nr08666k] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, and anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic effects and narrow band-gap properties using hexagonal ferrite (h-RFeO3) thin films, where R denotes rare-earth ions. FPVs with narrow band gaps suggest their potential applicability as photovoltaic and optoelectronic devices. The h-RFeO3 films further exhibit reasonably large ferroelectric polarizations (4.7-8.5 μC cm-2), which possibly reduces a rapid recombination rate of the photo-generated electron-hole pairs. The power conversion efficiency (PCE) of h-RFeO3 thin-film devices is sensitive to the magnitude of polarization. In the case of the h-TmFeO3 (h-TFO) thin film, the measured PCE is twice as large as that of the BiFeO3 thin film, a prototypic FPV. The effect of electrical fatigue on FPV responses has been further investigated. This work thus demonstrates a new class of FPVs towards high-efficiency solar cell and optoelectronic applications.
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Affiliation(s)
- Hyeon Han
- Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
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Gong SJ, Zheng F, Rappe AM. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. PHYSICAL REVIEW LETTERS 2018; 121:017402. [PMID: 30028160 DOI: 10.1103/physrevlett.121.017402] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2017] [Revised: 03/03/2018] [Indexed: 06/08/2023]
Abstract
The shift current (SHC) has been accepted as the primary mechanism of the bulk photovoltaic effect (BPVE) in ferroelectrics, which is much different from the typical p-n junction-based photovoltaic mechanism in heterogeneous materials. In the present work, we use first-principles calculations to investigate the SHC response in the ferroelectric semiconductor GeTe, which is found possess a large SHC response due to its intrinsic narrow band gap and high covalency. We explore the changes of SHC response induced by phonon vibrations, and analytically fit current versus vibrational amplitude to reveal the quantitative relationships between vibrations and the SHC response. Furthermore, we demonstrate the temperature dependence of the SHC response by averaging the phonon vibration influence in the Brillouin zone. Our investigation provides an explicit experimental prediction about the temperature dependence of BPVE and can be extended to other classes of noncentrosymmetric materials.
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Affiliation(s)
- Shi-Jing Gong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200062, China
| | - Fan Zheng
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
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43
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Barad HN, Keller DA, Rietwyk KJ, Ginsburg A, Tirosh S, Meir S, Anderson AY, Zaban A. How Transparent Oxides Gain Some Color: Discovery of a CeNiO 3 Reduced Bandgap Phase As an Absorber for Photovoltaics. ACS COMBINATORIAL SCIENCE 2018; 20:366-376. [PMID: 29718654 DOI: 10.1021/acscombsci.8b00031] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
In this work, we describe the formation of a reduced bandgap CeNiO3 phase, which, to our knowledge, has not been previously reported, and we show how it is utilized as an absorber layer in a photovoltaic cell. The CeNiO3 phase is prepared by a combinatorial materials science approach, where a library containing a continuous compositional spread of Ce xNi1- xO y is formed by pulsed laser deposition (PLD); a method that has not been used in the past to form Ce-Ni-O materials. The library displays a reduced bandgap throughout, calculated to be 1.48-1.77 eV, compared to the starting materials, CeO2 and NiO, which each have a bandgap of ∼3.3 eV. The materials library is further analyzed by X-ray diffraction to determine a new crystalline phase. By searching and comparing to the Materials Project database, the reduced bandgap CeNiO3 phase is realized. The CeNiO3 reduced bandgap phase is implemented as the absorber layer in a solar cell and photovoltages up to 550 mV are achieved. The solar cells are also measured by surface photovoltage spectroscopy, which shows that the source of the photovoltaic activity is the reduced bandgap CeNiO3 phase, making it a viable material for solar energy.
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Affiliation(s)
- Hannah-Noa Barad
- Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar Ilan University, 5290002 Ramat Gan, Israel
| | - David A. Keller
- Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar Ilan University, 5290002 Ramat Gan, Israel
| | - Kevin J. Rietwyk
- Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar Ilan University, 5290002 Ramat Gan, Israel
| | - Adam Ginsburg
- Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar Ilan University, 5290002 Ramat Gan, Israel
| | - Shay Tirosh
- Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar Ilan University, 5290002 Ramat Gan, Israel
| | - Simcha Meir
- Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar Ilan University, 5290002 Ramat Gan, Israel
| | - Assaf Y. Anderson
- Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar Ilan University, 5290002 Ramat Gan, Israel
| | - Arie Zaban
- Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar Ilan University, 5290002 Ramat Gan, Israel
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Zhang Y, Jie W, Chen P, Liu W, Hao J. Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707007. [PMID: 29888451 DOI: 10.1002/adma.201707007] [Citation(s) in RCA: 52] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2017] [Revised: 02/05/2018] [Indexed: 05/12/2023]
Abstract
Piezoelectric and ferroelectric materials have shown great potential for control of the optical process in emerging materials. There are three ways for them to impact on the optical process in various materials. They can act as external perturbations, such as ferroelectric gating and piezoelectric strain, to tune the optical properties of the materials and devices. Second, ferroelectricity and piezoelectricity as innate attributes may exist in some optoelectronic materials, which can couple with other functional features (e.g., semiconductor transport, photoexcitation, and photovoltaics) in the materials giving rise to unprecedented device characteristics. The last way is artificially introducing optical functionalities into ferroelectric and piezoelectric materials and devices, which provides an opportunity for investigating the intriguing interplay between the parameters (e.g., electric field, temperature, and strain) and the introduced optical properties. Here, the tuning strategies, fundamental mechanisms, and recent progress in ferroelectric and piezoelectric effects modulating the optical properties of a wide spectrum of materials, including lanthanide-doped phosphors, quantum dots, 2D materials, wurtzite-type semiconductors, and hybrid perovskites, are presented. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Yang Zhang
- Institute of Modern Optics, Nankai University, Tianjin, 300071, China
| | - Wenjing Jie
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610068, China
| | - Ping Chen
- Institute of Modern Optics, Nankai University, Tianjin, 300071, China
| | - Weiwei Liu
- Institute of Modern Optics, Nankai University, Tianjin, 300071, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
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45
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Tu CS, Chen PY, Chen CS, Lin CY, Schmidt V. Tailoring microstructure and photovoltaic effect in multiferroic Nd-substituted BiFeO3 ceramics by processing atmosphere modification. Ann Ital Chir 2018. [DOI: 10.1016/j.jeurceramsoc.2017.11.025] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Yang X, Zeng R, Ren Z, Wu Y, Chen X, Li M, Chen J, Zhao R, Zhou D, Liao Z, Tian H, Lu Y, Li X, Li J, Han G. Single-Crystal BiFeO 3 Nanoplates with Robust Antiferromagnetism. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5785-5792. [PMID: 29368504 DOI: 10.1021/acsami.7b17449] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Freestanding and single-crystal BiFeO3 (BFO) nanoplates have been successfully synthesized by a fluoride ion-assisted hydrothermal method, and the thickness of the nanoplates can be effectively tailored from 80 to 380 nm by the concentration of fluoride ions. It is revealed that BFO nanoplates grew via an oriented attachment of layer by layer, giving rise to the formation of the inner interface within the nanoplates. In particular, antiferromagnetic (AFM) phase-transition temperature (Néel temperature, TN) of the BFO nanoplates is significantly enhanced from typical 370 to ∼512 °C, whereas the Curie temperature (TC) of the BFO nanoplates is determined to be ∼830 °C, in good agreement with a bulk value. The combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and the first-principle calculations reveals that the interfacial tensile strain remarkably improves the stability of AFM ordering, accounting for the significant enhancement in TN of BFO plates. Correspondingly, the tensile strain induced the polarization and oxygen octahedral tilting has been observed near the interface. The findings presented here suggest that single-crystal BFO nanoplate is an ideal system for exploring an intrinsic magnetoelectric property, where a tensile strain can be a very promising approach to tailor AFM ordering and polarization rotation for an enhanced coupling effect.
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Affiliation(s)
- Xin Yang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University , Kunming 650500, China
| | - RongGuang Zeng
- Science and Technology on Surface Physics and Chemistry Laboratory , P.O. Box 718-35, Mianyang 621907, China
| | - ZhaoHui Ren
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - YanFei Wu
- Institute for Quantum Science and Engineering and Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China
| | - Xing Chen
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - Ming Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - JiaLu Chen
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - RuoYu Zhao
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - DiKui Zhou
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - ZhiMin Liao
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, China
| | - He Tian
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - YunHao Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - Xiang Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
| | - JiXue Li
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - GaoRong Han
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University , Hangzhou 310027, China
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Nataf GF, Barrett N, Kreisel J, Guennou M. Raman signatures of ferroic domain walls captured by principal component analysis. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:035902. [PMID: 29091587 DOI: 10.1088/1361-648x/aa9778] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Ferroic domain walls are currently investigated by several state-of-the art techniques in order to get a better understanding of their distinct, functional properties. Here, principal component analysis (PCA) of Raman maps is used to study ferroelectric domain walls (DWs) in LiNbO3 and ferroelastic DWs in NdGaO3. It is shown that PCA allows us to quickly and reliably identify small Raman peak variations at ferroelectric DWs and that the value of a peak shift can be deduced-accurately and without a priori-from a first order Taylor expansion of the spectra. The ability of PCA to separate the contribution of ferroelastic domains and DWs to Raman spectra is emphasized. More generally, our results provide a novel route for the statistical analysis of any property mapped across a DW.
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Affiliation(s)
- G F Nataf
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, L-4422 Belvaux, Luxembourg. SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France. Department of Materials Science, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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Zhang G, Cao J, Huang G, Li J, Li D, Yao W, Zeng T. Facile fabrication of well-polarized Bi2WO6 nanosheets with enhanced visible-light photocatalytic activity. Catal Sci Technol 2018. [DOI: 10.1039/c8cy01963k] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A universal and facile strategy is proposed to fabricate polarized Bi2WO6 nanoparticles with the assistance of a soluble organic–inorganic composite film.
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Affiliation(s)
- Ganghua Zhang
- Shanghai Key Laboratory of Engineering Materials Application and Evaluation
- Shanghai Research Institute of Materials
- Shanghai 200437
- P. R. China
| | - Jianwu Cao
- Shanghai Key Laboratory of Engineering Materials Application and Evaluation
- Shanghai Research Institute of Materials
- Shanghai 200437
- P. R. China
| | - Guoquan Huang
- Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power
- College of Environmental & Chemical Engineering
- Shanghai University of Electric Power
- Shanghai 200090
- P. R. China
| | - Jian Li
- Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power
- College of Environmental & Chemical Engineering
- Shanghai University of Electric Power
- Shanghai 200090
- P. R. China
| | - Dezeng Li
- School of Chemistry and Molecular Engineering
- East China Normal University
- Shanghai 200241
- P. R. China
| | - Weifeng Yao
- Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power
- College of Environmental & Chemical Engineering
- Shanghai University of Electric Power
- Shanghai 200090
- P. R. China
| | - Tao Zeng
- Shanghai Key Laboratory of Engineering Materials Application and Evaluation
- Shanghai Research Institute of Materials
- Shanghai 200437
- P. R. China
- Advanced Science Research Laboratory
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Zhang Y, Shimada T, Kitamura T, Wang J. Ferroelectricity in Ruddlesden-Popper Chalcogenide Perovskites for Photovoltaic Application: The Role of Tolerance Factor. J Phys Chem Lett 2017; 8:5834-5839. [PMID: 29110490 DOI: 10.1021/acs.jpclett.7b02591] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Chalcogenide perovskites with optimal band gap and desirable light absorption are promising for photovoltaic devices, whereas the absence of ferroelectricity limits their potential in applications. On the basis of first-principles calculations, we reveal the underlying mechanism of the paraelectric nature of Ba3Zr2S7 observed in experiments and demonstrate a general rule for the appearance of ferroelectricity in chalcogenide perovskites with Ruddlesden-Popper (RP) A3B2X7 structures. Group theoretical analysis shows that the tolerance factor is the primary factor that dominates the ferroelectricity. Both Ba3Zr2S7 and Ba3Hf2S7 with large tolerance factor are paraelectric because of the suppression of in-phase rotation that is indispensable to hybrid improper ferroelectricity. In contrast, Ca3Zr2S7, Ca3Hf2S7, Ca3Zr2Se7, and Ca3Hf2S7 with small tolerance factor exhibit in-phase rotation and can be stable in the ferroelectric Cmc21 ground state with nontrivial polarization. These findings not only provide useful guidance to engineering ferroelectricity in RP chalcogenide perovskites but also suggest potential ferroelectric semiconductors for photovoltaic applications.
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Affiliation(s)
- Yajun Zhang
- Department of Engineering Mechanics & Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University , 38 Zheda Road, Hangzhou 310027, China
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science, Kyoto University , Nishikyo-ku, Kyoto 615-8540, Japan
| | - Takayuki Kitamura
- Department of Mechanical Engineering and Science, Kyoto University , Nishikyo-ku, Kyoto 615-8540, Japan
| | - Jie Wang
- Department of Engineering Mechanics & Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University , 38 Zheda Road, Hangzhou 310027, China
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50
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Field enhancement of electronic conductance at ferroelectric domain walls. Nat Commun 2017; 8:1318. [PMID: 29105653 PMCID: PMC5673066 DOI: 10.1038/s41467-017-01334-5] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2017] [Accepted: 09/08/2017] [Indexed: 11/22/2022] Open
Abstract
Ferroelectric domain walls have continued to attract widespread attention due to both the novelty of the phenomena observed and the ability to reliably pattern them in nanoscale dimensions. However, the conductivity mechanisms remain in debate, particularly around nominally uncharged walls. Here, we posit a conduction mechanism relying on field-modification effect from polarization re-orientation and the structure of the reverse-domain nucleus. Through conductive atomic force microscopy measurements on an ultra-thin (001) BiFeO3 thin film, in combination with phase-field simulations, we show that the field-induced twisted domain nucleus formed at domain walls results in local-field enhancement around the region of the atomic force microscope tip. In conjunction with slight barrier lowering, these two effects are sufficient to explain the observed emission current distribution. These results suggest that different electronic properties at domain walls are not necessary to observe localized enhancement in domain wall currents. Understanding the conductivity at the nominally uncharged domain walls in ferroelectrics is still far from complete. Here the authors report an enhanced conduction at domain walls in an ultra-thin (001) BiFeO3 film resulting from the formation of a field-induced meta-stable twisted domain nucleus.
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