1
|
Tcakaev A, Rubrecht B, Facio JI, Zabolotnyy VB, Corredor LT, Folkers LC, Kochetkova E, Peixoto TRF, Kagerer P, Heinze S, Bentmann H, Green RJ, Gargiani P, Valvidares M, Weschke E, Haverkort MW, Reinert F, van den Brink J, Büchner B, Wolter AUB, Isaeva A, Hinkov V. Intermixing-Driven Surface and Bulk Ferromagnetism in the Quantum Anomalous Hall Candidate MnBi 6 Te 10. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2203239. [PMID: 36802132 PMCID: PMC10074120 DOI: 10.1002/advs.202203239] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Revised: 01/17/2023] [Indexed: 06/18/2023]
Abstract
The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi2 Te4 and MnBi4 Te7 benchmark the (MnBi2 Te4 )(Bi2 Te3 )n family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi2 Te4 septuple layers (SLs). However, the QAHE realization is complicated in MnBi2 Te4 and MnBi4 Te7 due to the substantial antiferromagnetic (AFM) coupling between the SLs. An FM state, advantageous for the QAHE, can be stabilized by interlacing the SLs with an increasing number n of Bi2 Te3 quintuple layers (QLs). However, the mechanisms driving the FM state and the number of necessary QLs are not understood, and the surface magnetism remains obscure. Here, robust FM properties in MnBi6 Te10 (n = 2) with Tc ≈ 12 K are demonstrated and their origin is established in the Mn/Bi intermixing phenomenon by a combined experimental and theoretical study. The measurements reveal a magnetically intact surface with a large magnetic moment, and with FM properties similar to the bulk. This investigation thus consolidates the MnBi6 Te10 system as perspective for the QAHE at elevated temperatures.
Collapse
Affiliation(s)
- Abdul‐Vakhab Tcakaev
- Physikalisches Institut (EP‐IV)Universität WürzburgAm HublandD‐97074WürzburgGermany
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
| | - Bastian Rubrecht
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
| | - Jorge I. Facio
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
- Centro Atómico BarilocheInstituto de Nanociencia y Nanotecnología (CNEA‐CONICET) and Instituto Balseiro. Av. Bustillo 9500Bariloche8400Argentina
| | - Volodymyr B. Zabolotnyy
- Physikalisches Institut (EP‐IV)Universität WürzburgAm HublandD‐97074WürzburgGermany
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
| | - Laura T. Corredor
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
| | - Laura C. Folkers
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Institut für Festkörper‐ und MaterialphysikTechnische Universität DresdenD‐01062DresdenGermany
| | - Ekaterina Kochetkova
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
| | - Thiago R. F. Peixoto
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Physikalisches Institut (EP‐VII)Universität WürzburgAm HublandD‐97074WürzburgGermany
| | - Philipp Kagerer
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Physikalisches Institut (EP‐VII)Universität WürzburgAm HublandD‐97074WürzburgGermany
| | - Simon Heinze
- Institute for Theoretical PhysicsHeidelberg UniversityPhilosophenweg 1969120HeidelbergGermany
| | - Hendrik Bentmann
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Physikalisches Institut (EP‐VII)Universität WürzburgAm HublandD‐97074WürzburgGermany
| | - Robert J. Green
- Department of Physics and Astronomy and Stewart Blusson Quantum Matter InstituteUniversity of British ColumbiaVancouverBritish ColumbiaV6T 1Z4Canada
- Department of Physics and Engineering PhysicsUniversity of SaskatchewanSaskatoonSKS7N 5E2Canada
| | - Pierluigi Gargiani
- ALBA Synchrotron Light SourceE‐08290 Cerdanyola del VallèsBarcelonaSpain
| | - Manuel Valvidares
- ALBA Synchrotron Light SourceE‐08290 Cerdanyola del VallèsBarcelonaSpain
| | - Eugen Weschke
- Helmholtz‐Zentrum Berlin für Materialien und EnergieAlbert‐Einstein‐Straße 15D‐12489BerlinGermany
| | - Maurits W. Haverkort
- Institute for Theoretical PhysicsHeidelberg UniversityPhilosophenweg 1969120HeidelbergGermany
| | - Friedrich Reinert
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Physikalisches Institut (EP‐VII)Universität WürzburgAm HublandD‐97074WürzburgGermany
| | - Jeroen van den Brink
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
- Institut für Theoretische PhysikTechnische Universität DresdenD‐01062DresdenGermany
| | - Bernd Büchner
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
- Institut für Festkörper‐ und MaterialphysikTechnische Universität DresdenD‐01062DresdenGermany
| | - Anja U. B. Wolter
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
| | - Anna Isaeva
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
- Van der Waals‐Zeeman InstituteDepartment of Physics and AstronomyUniversity of AmsterdamScience Park 904Amsterdam1098 XHThe Netherlands
| | - Vladimir Hinkov
- Physikalisches Institut (EP‐IV)Universität WürzburgAm HublandD‐97074WürzburgGermany
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
| |
Collapse
|
2
|
Pincelli T, Lollobrigida V, Borgatti F, Regoutz A, Gobaut B, Schlueter C, Lee TL, Payne DJ, Oura M, Tamasaku K, Petrov AY, Graziosi P, Granozio FM, Cavallini M, Vinai G, Ciprian R, Back CH, Rossi G, Taguchi M, Daimon H, van der Laan G, Panaccione G. Quantifying the critical thickness of electron hybridization in spintronics materials. Nat Commun 2017; 8:16051. [PMID: 28714466 PMCID: PMC5520016 DOI: 10.1038/ncomms16051] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2016] [Accepted: 05/15/2017] [Indexed: 11/09/2022] Open
Abstract
In the rapidly growing field of spintronics, simultaneous control of electronic and magnetic properties is essential, and the perspective of building novel phases is directly linked to the control of tuning parameters, for example, thickness and doping. Looking at the relevant effects in interface-driven spintronics, the reduced symmetry at a surface and interface corresponds to a severe modification of the overlap of electron orbitals, that is, to a change of electron hybridization. Here we report a chemically and magnetically sensitive depth-dependent analysis of two paradigmatic systems, namely La1−xSrxMnO3 and (Ga,Mn)As. Supported by cluster calculations, we find a crossover between surface and bulk in the electron hybridization/correlation and we identify a spectroscopic fingerprint of bulk metallic character and ferromagnetism versus depth. The critical thickness and the gradient of hybridization are measured, setting an intrinsic limit of 3 and 10 unit cells from the surface, respectively, for (Ga,Mn)As and La1−xSrxMnO3, for fully restoring bulk properties. Surface versus bulk effects in electronic structure of spintronics materials are crucial to their applications but are yet well understood. Here the authors experimentally determine the critical thickness that defines the crossover of electron hybridization between surface and bulk for two prototype spintronics materials.
Collapse
Affiliation(s)
- T Pincelli
- Istituto Officina dei Materiali-CNR, Laboratorio TASC, Area Science Park, S.S. 14, Km 163.5, Trieste I-34149, Italy.,Dipartimento di Fisica, Università di Milano, Via Celoria 16, Milano I-20133, Italy
| | - V Lollobrigida
- Istituto Officina dei Materiali-CNR, Laboratorio TASC, Area Science Park, S.S. 14, Km 163.5, Trieste I-34149, Italy.,Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, Roma I-00146, Italy
| | - F Borgatti
- Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), via P. Gobetti 101, Bologna I-40129, Italy
| | - A Regoutz
- Department of Materials, Imperial College London, South Kensington, London SW7 2AZ, UK
| | - B Gobaut
- Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, Trieste 34149, Italy
| | - C Schlueter
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, UK
| | - T-L Lee
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, UK
| | - D J Payne
- Department of Materials, Imperial College London, South Kensington, London SW7 2AZ, UK
| | - M Oura
- RIKEN SPring-8 Center, Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
| | - K Tamasaku
- RIKEN SPring-8 Center, Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
| | - A Y Petrov
- Istituto Officina dei Materiali-CNR, Laboratorio TASC, Area Science Park, S.S. 14, Km 163.5, Trieste I-34149, Italy
| | - P Graziosi
- Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), via P. Gobetti 101, Bologna I-40129, Italy
| | - F Miletto Granozio
- CNR-SPIN, Complesso Universitario Monte S. Angelo, Napoli 80126, Italy.,Dipartimento di Fisica, Università 'Federico II' di Napoli, Napoli, 80126, Italy
| | - M Cavallini
- Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), via P. Gobetti 101, Bologna I-40129, Italy
| | - G Vinai
- Istituto Officina dei Materiali-CNR, Laboratorio TASC, Area Science Park, S.S. 14, Km 163.5, Trieste I-34149, Italy
| | - R Ciprian
- Istituto Officina dei Materiali-CNR, Laboratorio TASC, Area Science Park, S.S. 14, Km 163.5, Trieste I-34149, Italy
| | - C H Back
- Institut fur Experimentelle Physik, Universitat Regensburg, Regensburg D-93040, Germany
| | - G Rossi
- Istituto Officina dei Materiali-CNR, Laboratorio TASC, Area Science Park, S.S. 14, Km 163.5, Trieste I-34149, Italy.,Dipartimento di Fisica, Università di Milano, Via Celoria 16, Milano I-20133, Italy
| | - M Taguchi
- RIKEN SPring-8 Center, Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan.,Nara Institute of Science and Technology, 8-9165 Takayama, Ikoma, Nara 630-0192, Japan
| | - H Daimon
- Nara Institute of Science and Technology, 8-9165 Takayama, Ikoma, Nara 630-0192, Japan
| | - G van der Laan
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, UK
| | - G Panaccione
- Istituto Officina dei Materiali-CNR, Laboratorio TASC, Area Science Park, S.S. 14, Km 163.5, Trieste I-34149, Italy
| |
Collapse
|
3
|
Muneta I, Ohya S, Terada H, Tanaka M. Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor. Nat Commun 2016; 7:12013. [PMID: 27349454 PMCID: PMC4931231 DOI: 10.1038/ncomms12013] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2016] [Accepted: 05/20/2016] [Indexed: 11/09/2022] Open
Abstract
The band ordering of semiconductors is an important factor in determining the mobility and coherence of the wave function of carriers, and is thus a key factor in device performance. However, in heavily doped semiconductors, the impurities substantially disturb the band ordering, leading to significant degradation in performance. Here, we present the unexpected finding that the band ordering is suddenly restored in Mn-doped GaAs ((Ga,Mn)As) when the Mn concentration slightly exceeds ∼0.7% despite the extremely high doping concentration; this phenomenon is very difficult to predict from the general behaviour of doped semiconductors. This phenomenon occurs with a ferromagnetic phase transition, which is considered to have a crucial role in generating a well-ordered band structure. Our findings offer possibilities for ultra-high-speed quantum-effect spin devices based on semiconductors. As semiconductors are doped with impurities, their useful electrical transport properties are degraded as their band structures are increasingly modified. Here, the authors demonstrate that the band ordering is restored in Mn-doped GaAs above a ferromagnetic transition at a critical concentration.
Collapse
Affiliation(s)
- Iriya Muneta
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Shinobu Ohya
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.,Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Hiroshi Terada
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Masaaki Tanaka
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.,Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| |
Collapse
|
4
|
Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As. Sci Rep 2016; 6:27266. [PMID: 27265402 PMCID: PMC4893692 DOI: 10.1038/srep27266] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2016] [Accepted: 05/12/2016] [Indexed: 11/08/2022] Open
Abstract
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off band to the Fermi energy EF we conclude that EF is located within the heavy/light hole band. However, the bands are strongly perturbed by disorder and disorder-induced carrier correlations that lead to the Coulomb gap at EF, which we resolve experimentally in a series of samples, and show that its depth and width enlarge when the Curie temperature decreases. Furthermore, we have detected surprising linear magnetic dichroism in photoemission spectra of the split-off band. By a quantitative theoretical analysis we demonstrate that it arises from the Dresselhaus-type spin-orbit term in zinc-blende crystals. The spectroscopic access to the magnitude of such asymmetric part of spin-orbit coupling is worthwhile, as they account for spin-orbit torque in spintronic devices of ferromagnets without inversion symmetry.
Collapse
|
5
|
Liu W, West D, He L, Xu Y, Liu J, Wang K, Wang Y, van der Laan G, Zhang R, Zhang S, Wang KL. Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators. ACS NANO 2015; 9:10237-10243. [PMID: 26348798 DOI: 10.1021/acsnano.5b03980] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Magnetic doping is the most common method for breaking time-reversal-symmetry surface states of topological insulators (TIs) to realize novel physical phenomena and to create beneficial technological applications. Here we present a study of the magnetic coupling of a prototype magnetic TI, that is, Cr-doped Bi2Se3, in its ultrathin limit which is expected to give rise to quantum anomalous Hall (QAH) effect. The high quality Bi2-xCrxSe3 epitaxial thin film was prepared using molecular beam epitaxy (MBE), characterized with scanning transimission electron microscopy (STEM), electrical magnetotransport, and X-ray magnetic circularly dichroism (XMCD) techniques, and the results were simulated using density functional theory (DFT) with spin-orbit coupling (SOC). We observed a sizable spin moment mspin = (2.05 ± 0.20) μB/Cr and a small and negative orbital moment morb = (-0.05 ± 0.02) μB/Cr of the Bi1.94Cr0.06Se3 thin film at 2.5 K. A remarkable fraction of the (CrBi-CrI)(3+) antiferromagnetic dimer in the Bi2-xCrxSe3 for 0.02 < x < 0.40 was obtained using first-principles simulations, which was neglected in previous studies. The spontaneous coexistence of ferro- and antiferromagnetic Cr defects in Bi2-xCrxSe3 explains our experimental observations and those based on conventional magnetometry which universally report magnetic moments significantly lower than 3 μB/Cr predicted by Hund's rule.
Collapse
Affiliation(s)
- Wenqing Liu
- York-Nanjing Joint Center (YNJC) for Spintronics and Nanoengineering, School of Electronics Science and Engineering, Nanjing University , Nanjing 210093, China
- Spintronics and Nanodevice Laboratory, Department of Electronics, University of York , York YO10 5DD, United Kingdom
| | - Damien West
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
| | - Liang He
- York-Nanjing Joint Center (YNJC) for Spintronics and Nanoengineering, School of Electronics Science and Engineering, Nanjing University , Nanjing 210093, China
- Department of Electrical Engineering, University of California, Los Angeles , Los Angeles, California 90095, United States
| | - Yongbing Xu
- York-Nanjing Joint Center (YNJC) for Spintronics and Nanoengineering, School of Electronics Science and Engineering, Nanjing University , Nanjing 210093, China
- Spintronics and Nanodevice Laboratory, Department of Electronics, University of York , York YO10 5DD, United Kingdom
| | - Jun Liu
- Center of Electron Microscopy, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - Kejie Wang
- York-Nanjing Joint Center (YNJC) for Spintronics and Nanoengineering, School of Electronics Science and Engineering, Nanjing University , Nanjing 210093, China
| | - Yong Wang
- Center of Electron Microscopy, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China
| | - Gerrit van der Laan
- Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE, United Kingdom
| | - Rong Zhang
- York-Nanjing Joint Center (YNJC) for Spintronics and Nanoengineering, School of Electronics Science and Engineering, Nanjing University , Nanjing 210093, China
| | - Shengbai Zhang
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
| | - Kang L Wang
- Department of Electrical Engineering, University of California, Los Angeles , Los Angeles, California 90095, United States
| |
Collapse
|
6
|
Kobayashi M, Niwa H, Takeda Y, Fujimori A, Senba Y, Ohashi H, Tanaka A, Ohya S, Hai PN, Tanaka M, Harada Y, Oshima M. Electronic excitations of a magnetic impurity state in the diluted magnetic semiconductor (Ga,Mn)As. PHYSICAL REVIEW LETTERS 2014; 112:107203. [PMID: 24679325 DOI: 10.1103/physrevlett.112.107203] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2013] [Indexed: 06/03/2023]
Abstract
The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic x-ray scattering. From configuration-interaction cluster-model calculations, the line shapes of the Mn L3 resonant inelastic x-ray scattering spectra can be explained by d-d excitations from the Mn ground state dominated by charge-transferred states, in which hole carriers are bound to the Mn impurities, rather than a pure acceptor Mn2+ ground state. Unlike archetypical d-d excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the d-d excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through the hybridization of the Mn 3d orbital with the ligand band.
Collapse
Affiliation(s)
- M Kobayashi
- Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan
| | - H Niwa
- Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan and Institute for Solid State Physics, The University of Tokyo, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan
| | - Y Takeda
- Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan
| | - A Fujimori
- Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Y Senba
- Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan
| | - H Ohashi
- Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan
| | - A Tanaka
- Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
| | - S Ohya
- Department of Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - P N Hai
- Department of Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - M Tanaka
- Department of Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Y Harada
- Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan and Institute for Solid State Physics, The University of Tokyo, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan
| | - M Oshima
- Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan
| |
Collapse
|
7
|
Fujii J, Salles BR, Sperl M, Ueda S, Kobata M, Kobayashi K, Yamashita Y, Torelli P, Utz M, Fadley CS, Gray AX, Braun J, Ebert H, Di Marco I, Eriksson O, Thunström P, Fecher GH, Stryhanyuk H, Ikenaga E, Minár J, Back CH, van der Laan G, Panaccione G. Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As. PHYSICAL REVIEW LETTERS 2013; 111:097201. [PMID: 24033065 DOI: 10.1103/physrevlett.111.097201] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2013] [Indexed: 06/02/2023]
Abstract
We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.
Collapse
Affiliation(s)
- J Fujii
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|