Spectroscopy of single donors at ZnO(0001) surfaces

Atomic-scale manipulation of single-polaron in a two-dimensional semiconductor

Polaron is a composite quasiparticle derived from an excess carrier trapped by local lattice distortion, and it has been studied extensively for decades both theoretically and experimentally. However, atomic-scale creation and manipulation of single-polarons in real space have still not been achieved so far, which precludes the atomistic understanding of the properties of polarons as well as their applications. Herein, using scanning tunneling microscopy, we succeeded to create single polarons in a monolayer two-dimensional (2D) semiconductor, CoCl₂. Combined with first-principles calculations, two stable polaron configurations, centered at atop and hollow sites, respectively, have been revealed. Remarkably, a series of manipulation progresses - from creation, erasure, to transition - can be accurately implemented on individual polarons. Our results pave the way to understand the physics of polaron at atomic level, and the easy control of single polarons in 2D semiconductor may open the door to 2D polaronics including the data storage.

Nanoscale Heating of an Ultrathin Oxide Film Studied by Tip-Enhanced Raman Spectroscopy

We report on the nanoscale heating mechanism of an ultrathin ZnO film using low-temperature tip-enhanced Raman spectroscopy. Under the resonance condition, intense Stokes and anti-Stokes Raman scattering can be observed for the phonon modes of a two-monolayer (ML) ZnO on an Ag(111) surface, enabling us to monitor local heating at the nanoscale. It is revealed that the local heating originates mainly from inelastic electron tunneling through the electronic resonance when the bias voltage exceeds the conduction band edge of the 2-ML ZnO. When the bias voltage is lower than the conduction band edge, the local heating arises from two different contributions, namely direct optical excitation between the interface state and the conduction band of 2-ML ZnO or injection of photoexcited electrons from an Ag tip into the conduction band. These optical heating processes are promoted by localized surface plasmon excitation. Simultaneous mapping of tip-enhanced Raman spectroscopy and scanning tunneling spectroscopy for 2-ML ZnO including an atomic-scale defect demonstrates visualizing a correlation between the heating efficiency and the local density of states, which further allows us to analyze the local electron-phonon coupling strength with ∼2  nm spatial resolution.

Gigahertz Frame Rate Imaging of Charge-Injection Dynamics in a Molecular Light Source

Light sources on the scale of single molecules can be addressed and characterized at their proper sub-nanometer scale by scanning tunneling microscopy-induced luminescence (STML). Such a source can be driven by defined short charge pulses while the luminescence is detected with sub-nanosecond resolution. We introduce an approach to concurrently image the molecular emitter, which is based on an individual defect, with its local environment along with its luminescence dynamics at a resolution of a billion frames per second. The observed dynamics can be assigned to the single electron capture occurring in the low-nanosecond regime. While the emitter's location on the surface remains fixed, the scanning of the tip modifies the energy landscape for charge injection into the defect. The principle of measurement is extendable to fundamental processes beyond charge transfer, like exciton diffusion.

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

We report scanning tunneling microscopy (STM) studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ∼100×. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.

Realizing quinary charge states of solitary defects in two-dimensional intermetallic semiconductor

Creating and manipulating multiple charge states of solitary defects in semiconductors is of essential importance for solitary defect electronics, but is fundamentally limited by Coulomb's law. Achieving this objective is challenging, due to the conflicting requirements of the localization necessary for the sizable band gap and delocalization necessary for a low charging energy. Here, using scanning tunneling microscopy/spectroscopy experiments and first-principles calculations, we realized exotic quinary charge states of solitary defects in two-dimensional intermetallic semiconductor Sn2Bi. We also observed an ultralow defect charging energy that increases sublinearly with charge number rather than displaying the usual quadratic behavior. Our work suggests a promising route for constructing multiple defect-charge states by designing intermetallic semiconductors, and opens new opportunities for developing quantum devices with charge-based quantum states.

Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe_{2}

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe_{2} intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V_{W} dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V_{W} dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V_{W} dopants.

Scanning tunneling microscopy investigations of unoccupied surface states in two-dimensional semiconducting β-√3 × √3-Bi/Si(111) surface

Two-dimensional surface structures often host a surface state in the bulk gap, which plays a crucial role in the surface electron transport. The diversity of in-gap surface states extends the category of two-dimensional systems and gives us more choices in material applications. In this article, we investigated the surface states of β-√3 × √3-Bi/Si(111) surface by scanning tunneling microscopy. Two nearly free electron states in the bulk gap of silicon were found in the unoccupied states. Combined with first-principles calculations, these two states were verified to be the Bi-contributed surface states and electron-accumulation-induced quantum well states. Due to the spin-orbit coupling of Bi atoms, Bi-contributed surface states exhibit free-electron Rashba splitting. The in-gap surface states with spin splitting can possibly be used for spin polarized electronics applications.

Detection and Manipulation of Charge States for Double-Decker DyPc2 Molecules on Ultrathin CuO Films

Charge states of lanthanide double-decker phthalocyanines complexes significantly influence their geometrical structures and magnetic properties. In this study, the charge states of single DyPc₂ molecules on an ultrathin CuO film were detected by scanning tunneling microscopy and spectroscopy in magnetic fields. Four types of adsorptions of DyPc₂ molecules on CuO were experimentally observed. Without applying voltages, two of them were positively charged with the other two at the neutral state. By controlling the sample bias, two types of neutral molecules can be switched to the positively and negatively charged states, respectively. This manipulation was not realized for the DyPc₂ cations. A way to precisely detect the molecular charge states with and without current is beneficial for the development of molecular electronics.

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional sp-bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

A minimal double quantum dot

Double quantum dots (DQDs) are a versatile platform for solid-state physics, quantum computation and nanotechnology. The micro-fabrication techniques commonly used to fabricate DQDs are difficult to extend to the atomic scale. Using an alternative approach, which relies on scanning tunneling microscopy and spectroscopy, we prepared a minimal DQD in a wide band-gap semiconductor matrix. It is comprised of a pair of strongly coupled donor atoms that can each be doubly charged. The donor excitation diagram of this system mimicks the charge stability diagram observed in transport measurements of DQDs. We furthermore illustrate how the charge and spin degrees of freedom of the minimal DQD may be used to obtain a single quantum bit and to prepare a Bell state. The results open an intriguing perspective for quantum electronics with atomic-scale structures.

Spatially resolved photoresponse on individual ZnO nanorods: correlating morphology, defects and conductivity

Electrically active native point defects have a significant impact on the optical and electrical properties of ZnO nanostructures. Control of defect distribution and a detailed understanding of their physical properties are central to designing ZnO in novel functional forms and architecture, which ultimately decides device performance. Defect control is primarily achieved by either engineering nanostructure morphology by tailoring growth techniques or doping. Here, we report conducting atomic force microscopy studies of spatially resolved photoresponse properties on ZnO nanorod surfaces. The photoresponse for super-band gap, ultraviolet excitations show a direct correlation between surface morphology and photoactivity localization. Additionally, the system exhibits significant photoresponse with sub-bandgap, green illumination; the signature energy associated with the deep level oxygen vacancy states. While the local current-voltage characteristics provide evidence of multiple transport processes and quantifies the photoresponse, the local time-resolved photoresponse data evidences large variations in response times (90 ms-50 s), across the surface of a nanorod. The spatially varied photoconductance and the range in temporal response display a complex interplay of morphology, defects and connectivity that brings about the true colour of these ZnO nanostructures.

Exploring routes to tailor the physical and chemical properties of oxides via doping: an STM study

Doping opens fascinating possibilities for tailoring the electronic, optical, magnetic, and chemical properties of oxides. The dopants perturb the intrinsic behavior of the material by generating charge centers for electron transfer into adsorbates, by inducing new energy levels for electronic and optical excitations, and by altering the surface morphology and hence the adsorption and reactivity pattern. Despite a vivid scientific interest, knowledge on doped oxides is limited when compared to semiconductors, which reflects the higher complexity and the insulating nature of many oxides. In fact, atomic-scale studies, aiming at a mechanistic understanding of dopant-related processes, are still scarce.In this article, we review our scanning tunneling microscopy (STM) experiments on thin, crystalline oxide films with a defined doping level. We demonstrate how the impurities alter the surface morphology and produce cationic/anionic vacancies in order to keep the system charge neutral. We discuss how individual dopants can be visualized in the lattice, even if they reside in subsurface layers. By means of STM-conductance and x-ray photoelectron spectroscopy, we determine the electronic impact of dopants, including the energies of their eigen states and local band-bending effects in the host oxide. Electronic transitions between dopant-induced gap states give rise to new optical modes, as detected with STM luminescence spectroscopy. From a chemical perspective, dopants are introduced to improve the redox potential of oxide materials. Electron transfer from Mo-donors, for example, alters the growth behavior of gold and activates O2 molecules on a wide-gap CaO surface. Such results demonstrate the enormous potential of doped oxides in heterogeneous catalysis. Our experiments address the issue of doping from a fundamental viewpoint, posing questions on the lattice position, charge state, and electron-transfer potential of the impurity ions. Whether doped oxides are suitable to catalyze surface reactions needs to be explored in more applied studies in the future.

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy

Bilayer (BL) MoSe2 films grown by molecular-beam epitaxy (MBE) are studied by scanning tunneling microscopy and spectroscopy (STM/S). Similar to monolayer (ML) films, networks of inversion domain boundary (DB) defects are observed both in the top and bottom layers of BL MoSe2, and often they are seen spatially correlated such that one is on top of the other. There are also isolated ones in the bottom layer without companion in the top-layer and are detected by STM/S through quantum tunneling of the defect states through the barrier of the MoSe2 ML. Comparing the DB states in BL MoSe2 with that of ML film reveals some common features as well as differences. Quantum confinement of the defect states is indicated. Point defects in BL MoSe2 are also observed by STM/S, where ionization of the donor defect by the tip-induced electric field is evidenced. These results are of great fundamental interests as well as practical relevance of devices made of MoSe2 ultrathin layers.

Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope

In devices like the single-electron transistor the detailed transport properties of a nanostructure can be measured by tuning its energy levels with a gate voltage. The scanning tunnelling microscope in contrast usually lacks such a gate electrode. Here we demonstrate tuning of the levels of a donor in a scanning tunnelling microscope without a third electrode. The potential and the position of the tip are used to locally control band bending. Conductance maps in this parameter space reveal Coulomb diamonds known from three-terminal data from single-electron transistors and provide information on charging transitions, binding energies and vibrational excitations. The analogy to single-electron transistor data suggests a new way of extracting these key quantities without making any assumptions about the unknown shape of the scanning tunnelling microscope tip.

Phonon-mediated electron transport through CaO thin films

Scanning tunneling microscopy has developed into a powerful tool for the characterization of conductive surfaces, for which the overlap of tip and sample wave functions determines the image contrast. On insulating layers, as the CaO thin film grown on Mo(001) investigated here, direct overlap between initial and final states is not enabled anymore and electrons are transported via hopping through the conduction-band states of the oxide. Carrier transport is accompanied by strong phonon excitations in this case, imprinting an oscillatory signature on the differential conductance spectra of the system. The phonons show a characteristic spatial dependence and become softer around lattice irregularities in the oxide film, such as dislocation lines.

Zn interstitials and O vacancies responsible for n-type ZnO: what do the emission spectra reveal?

Evidencing interstitial Zn related defect states inside the conduction band of Zn-rich ZnO nanorods.

Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

Surface defects and their impact on the electronic structure of Mo-doped CaO films: an STM and DFT study

Scanning tunneling microscopy and DFT calculations are used to probe the local electronic structure of a Mo-doped CaO film.

Fixing the energy scale in scanning tunneling microscopy on semiconductor surfaces

In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related conductance is observed in negative, zero, and positive band-bending regimes. An Anderson-Hubbard model is used to rationalize our findings, capturing the crossover between the acceptor state being part of an impurity band for zero band bending and the acceptor state being split off and localized for strong negative or positive band bending, respectively.

Defects in 6 MeV H+ irradiated hydrothermal ZnO single crystal

The effect of 6 MeV H(+) irradiation on hydrothermally grown ZnO single crystal has been investigated using high resolution x-ray diffraction (HRXRD) and optical absorption (ultraviolet-visible) spectroscopy. The increase of the diffuse scattering in the reciprocal space maps measured using HRXRD indicates an increase of the point defect density upon irradiation. Within the penetration depth of x-rays of several micrometres, the defect density increased with increasing distance from the sample surface. On the other hand, the near band gap optical absorption became sharper for the irradiated crystal. This reflects enhanced band to band absorption and reduced sub-band gap absorption due to defects. Temperature dependent photoluminescence spectra of the pristine sample show negative thermal quenching (NTQ) of the luminescence which is due to the presence of two or more donor related defects. Upon irradiation, a single dominant donor bound transition can be found without any temperature induced NTQ. Enhancement of the band edge luminescence and reduction of the defect related luminescence is observed at 10 K. Such changes have been discussed in the light of the hydrogen present in the as-grown state of hydrothermal ZnO.

"Magic" vicinal zinc oxide surfaces

The structure of (0001) oriented ZnO single crystal surfaces is investigated by scanning tunneling microscopy. Depending on the preparation conditions, faceting of the crystals into large areas of {101¯4} surface orientation occurs. This restructuring of the surface is shown to be a consequence of dipole compensation and charge neutralization. A new stabilization mechanism of polar oxide surfaces is found which is based on the formation of vicinal surfaces with special electronic and structural properties.

Manipulation of subsurface donors in ZnO

Single donors close to the ZnO(0001) surface are investigated with scanning tunneling microscopy. Their binding energies and depths are determined from spatially resolved spectra of the differential conductance. At elevated bias of the STM tip, vertical motion of the donors can be induced. The direction of the motion can be controlled by the bias polarity.

Confined doping on a metallic atomic chain structure

On Si(111)-(5×2)-Au it is shown that metallic sections of quantum wires between two doping adatoms establish a local electronic structure which is primarily defined by the section length. Such confined doping is a direct consequence of reduced dimensionality and is not observed in higher dimensions. Within a chain segment, the effect of a spatially independent charge-carrier concentration is superimposed by a Coulomb-like interaction due to the positively charged dopants. This offers a natural explanation for the relatively broad photoemission features and the complex appearance in scanning tunneling microscopy and spectroscopy images.