Spiral growth without dislocations: molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001)

Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

GaSe is an important member of the post-transition-metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single-crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates by using molecular beam epitaxy. It yields smooth thin GaSe films with a rare γ'-polymorph. We analyze the formation mechanism of γ'-GaSe using density-functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/three-dimensional (3D) quasi-van der Waals epitaxial growth.

Raman scattering spectroscopy of MBE grown thin film topological insulator Bi2-xSbxTe3-ySey

BSTS epitaxial thin film topological insulators were grown using the MBE technique on two different types of substrates i.e., Si (111) and SiC/graphene with Bi0.7Sb1.6Te1.8Se0.9 and Bi0.9Sb1.5Te1.8Se1.1, respectively. The crystallographic properties of BSTS films were investigated via X-ray diffraction, which showed the strongest reflections from the (0 0 l) facets corresponding to the rhombohedral phase. Superior epitaxial growth, homogeneous thickness, smooth surfaces, and larger unit cell parameters were observed for the films grown on the Si substrate. Polarization dependent Raman spectroscopy showed a weak appearance of the Ag mode in cross--polarized geometry. In contrast, a strong Eg mode was observed in both parallel and cross-polarized geometries which correspond to the rhombohedral crystal symmetry of BSTS films. A redshift of Ag and Eg modes was observed in the Raman spectra of BSTS films grown on the Si substrate, compared to those on SiC/graphene, which was directly associated with the unit cell parameter and composition of the films. Raman spectra showed four fundamental modes with asymmetric line shape, and deconvolution of the peaks resulted in additional modes in both the BSTS thin films. The sum of relative ratios of linewidths of fundamental modes (Ag and Eg) of BSTS films grown on Si substrate was lower, indicating a more ordered structure with lower contribution of defects as compared to BSTS film grown on SiC/graphene substrate.

Interface-induced superconductivity in magnetic topological insulators

The interface between two different materials can show unexpected quantum phenomena. In this study, we used molecular beam epitaxy to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We observed emergent interface-induced superconductivity in these heterostructures and demonstrated the co-occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer-the three essential ingredients of chiral topological superconductivity (TSC). The unusual coexistence of ferromagnetism and superconductivity is accompanied by a high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. These magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics.

Electron Transport Properties of Graphene/WS2 Van Der Waals Heterojunctions

Van der Waals heterojunctions of two-dimensional atomic crystals are widely used to build functional devices due to their excellent optoelectronic properties, which are attracting more and more attention, and various methods have been developed to study their structure and properties. Here, density functional theory combined with the nonequilibrium Green's function technique has been used to calculate the transport properties of graphene/WS2 heterojunctions. It is observed that the formation of heterojunctions does not lead to the opening of the Dirac point of graphene. Instead, the respective band structures of both graphene and WS2 are preserved. Therefore, the heterojunction follows a unique Ohm's law at low bias voltages, despite the presence of a certain rotation angle between the two surfaces within the heterojunction. The transmission spectra, the density of states, and the transmission eigenstate are used to investigate the origin and mechanism of unique linear I-V characteristics. This study provides a theoretical framework for designing mixed-dimensional heterojunction nanoelectronic devices.

Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing

The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi_0.4Sb_0.6)₂Te₃ films deposited by molecular beam epitaxy on Al₂O₃ (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.

Spin-Sensitive Epitaxial In2Se3 Tunnel Barrier in In2Se3/Bi2Se3 Topological van der Waals Heterostructure

Current-generated spin arising from spin-momentum locking in topological insulator (TI) surface states has been shown to switch the magnetization of an adjacent ferromagnet (FM) via spin-orbit torque (SOT) with a much higher efficiency than heavy metals. However, in such FM/TI heterostructures, most of the current is shunted through the FM metal due to its lower resistance, and recent calculations have also shown that topological surface states can be significantly impacted when interfaced with an FM metal such as Ni and Co. Hence, placing an insulating layer between the TI and FM will not only prevent current shunting, therefore minimizing overall power consumption, but may also help preserve the topological surface states at the interface. Here, we report the van der Waals epitaxial growth of β-phase In2Se3 on Bi2Se3 by molecular beam epitaxy and demonstrate its spin sensitivity by the electrical detection of current-generated spin in Bi2Se3 surface states using a Fe/In2Se3 detector contact. Our density functional calculations further confirm that the linear dispersion and spin texture of the Bi2Se3 surface states are indeed preserved at the In2Se3/Bi2Se3 interface. This demonstration of an epitaxial crystalline spin-sensitive barrier that can be grown directly on Bi2Se3, and verification that it preserves the topological surface state, is electrically insulating and spin-sensitive, is an important step toward minimizing overall power consumption in SOT switching in TI/FM heterostructures in fully epitaxial topological spintronic devices.

Quantum transport and potential of topological states for thermoelectricity in Bi2Te3thin films

This paper reviews recent developments in quantum transport and it presents current efforts to explore the contribution of topological insulator boundary states to thermoelectricity in Bi₂Te₃thin films. Although Bi₂Te₃has been used as a thermoelectric material for many years, it is only recently that thin films of this material have been synthesized as 3D topological insulators with interesting physics and potential applications related to topologically protected surface states. A major bottleneck in Bi₂Te₃thin films has been eliminating its bulk conductivity while increasing its crystal quality. The ability to grow epitaxial films with high crystal quality and to fabricate sophisticated Bi₂Te₃-based devices is attractive for implementing a variety of topological quantum devices and exploring the potential of topological states to improve thermoelectric properties. Special emphasis is laid on preparing low-defect-density Bi₂Te₃epitaxial films, gate-tuning of normal-state transport and Josephson supercurrent in topological insulator/superconductor hybrid devices. Prospective quantum transport experiments on Bi₂Te₃thin-film devices are discussed as well. Finally, an overview of current progress on the contribution of topological insulator boundary states to thermoelectricity is presented. Future explorations to reveal the potential of topological states for improving thermoelectric properties of Bi₂Te₃films and realizing high-performance thermoelectric devices are discussed.

Magnetic Topological Insulator Heterostructures: A Review

Topological insulators (TIs) provide intriguing prospects for the future of spintronics due to their large spin-orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. The combination of topological properties and magnetic order can lead to new quantum states including the quantum anomalous Hall effect that was first experimentally realized in Cr-doped (Bi,Sb)₂ Te₃ films. Since magnetic doping can introduce detrimental effects, requiring very low operational temperatures, alternative approaches are explored. Proximity coupling to magnetically ordered systems is an obvious option, with the prospect to raise the temperature for observing the various quantum effects. Here, an overview of proximity coupling and interfacial effects in TI heterostructures is presented, which provides a versatile materials platform for tuning the magnetic and topological properties of these exciting materials. An introduction is first given to the heterostructure growth by molecular beam epitaxy and suitable structural, electronic, and magnetic characterization techniques. Going beyond transition-metal-doped and undoped TI heterostructures, examples of heterostructures are discussed, including rare-earth-doped TIs, magnetic insulators, and antiferromagnets, which lead to exotic phenomena such as skyrmions and exchange bias. Finally, an outlook on novel heterostructures such as intrinsic magnetic TIs and systems including 2D materials is given.

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

Bi₂Se₃ possesses a two-dimensional layered rhombohedral crystal structure, where the quintuple layers (QLs) are covalently bonded within the layers but weakly held together by van der Waals forces between the adjacent QLs. It is also pointed out that Bi₂Se₃ is a topological insulator, making it a promising candidate for a wide range of electronic and optoelectronic applications. In this study, we investigate the growth of high-quality Bi₂Se₃ thin films on mica by the molecular beam epitaxy technique. The films exhibited a layered structure and highly c-axis-preferred growth orientation with an XRD rocking curve full-width at half-maximum (FWHM) of 0.088°, clearly demonstrating excellent crystallinity for the Bi₂Se₃ deposited on the mica substrate. The growth mechanism was studied by using an interface model associated with the coincidence site lattice unit (CSLU) developed for van der Waals epitaxies. This high (001) texture favors electron transport in the material. Hall measurements revealed a mobility of 726 cm²/(Vs) at room temperature and up to 1469 cm²/(Vs) at 12 K. The results illustrate excellent electron mobility arising from the superior crystallinity of the films with significant implications for applications in conducting electrodes in optoelectronic devices on flexible substrates.

Effect of graphene substrate type on formation of Bi2Se3 nanoplates

Knowledge of nucleation and further growth of Bi₂Se₃ nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi₂Se₃ nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as reference substrates. The influence of different graphene substrates on nucleation and further lateral and vertical growth of the Bi₂Se₃ nanoplates is analysed. Possibility to obtain ultrathin Bi₂Se₃ thin films on these substrates is evaluated. Between the substrates considered in this work, graphene grown on silicon carbide is found to be the most promising substrate for obtaining of 1–5 nm thick Bi₂Se₃ films.

Nanoindentation of Bi₂Se₃ Thin Films

The nanomechanical properties and nanoindentation responses of bismuth selenide (Bi₂Se₃) thin films are investigated in this study. The Bi₂Se₃ thin films are deposited on c-plane sapphire substrates using pulsed laser deposition. The microstructural properties of Bi₂Se₃ thin films are analyzed by means of X-ray diffraction (XRD). The XRD results indicated that Bi₂Se₃ thin films are exhibited the hexagonal crystal structure with a c-axis preferred growth orientation. Nanoindentation results showed the multiple “pop-ins” displayed in the loading segments of the load-displacement curves, suggesting that the deformation mechanisms in the hexagonal-structured Bi₂Se₃ films might have been governed by the nucleation and propagation of dislocations. Further, an energetic estimation of nanoindentation-induced dislocation associated with the observed pop-in effects was made using the classical dislocation theory.

Dislocations in molecular crystals

Dislocations in molecular crystals remain terra incognita. Owing to the complexity of molecular structure, dislocations in molecular crystals can be difficult to understand using only the foundational concepts devised over decades for hard materials. Herein, we review the generation, structure, and physicochemical consequences of dislocations in molecular crystals. Unlike metals, ceramics, and semiconductors, molecular crystals are often characterized by flexible building units of low symmetry, thereby limiting analysis, complicating modeling, and prompting new approaches to elucidate their role in crystallography from growth to mechanics. Such considerations affect applications ranging from plastic electronics and mechanical actuators to the tableting of pharmaceuticals.

Exchange-biasing topological charges by antiferromagnetism

Geometric Hall effect is induced by the emergent gauge field experienced by the carriers adiabatically passing through certain real-space topological spin textures, which is a probe to non-trivial spin textures, such as magnetic skyrmions. We report experimental indications of spin-texture topological charges induced in heterostructures of a topological insulator (Bi,Sb)2Te3 coupled to an antiferromagnet MnTe. Through a seeding effect, the pinned spins at the interface leads to a tunable modification of the averaged real-space topological charge. This effect experimentally manifests as a modification of the field-dependent geometric Hall effect when the system is field-cooled along different directions. This heterostructure represents a platform for manipulating magnetic topological transitions using antiferromagnetic order.

Electrical Detection of Charge-to-spin and Spin-to-Charge Conversion in a Topological Insulator Bi2Te3 Using BN/Al2O3 Hybrid Tunnel Barrier

One of the most striking properties of three-dimensional topological insulators (TIs) is spin-momentum locking, where the spin is locked at right angles to momentum and hence an unpolarized charge current creates a net spin polarization. Alternatively, if a net spin is injected into the TI surface state system, it is distinctively associated with a unique carrier momentum and hence should generate a charge accumulation, as in the so-called inverse Edelstein effect. Here using a Fe/Al₂O₃/BN tunnel barrier, we demonstrate both effects in a single device in Bi₂Te₃: the electrical detection of the spin accumulation generated by an unpolarized current flowing through the surface states, and that of the charge accumulation generated by spins injected into the surface state system. This work is the first to utilize BN as part of a hybrid tunnel barrier on TI, where we observed a high spin polarization of 93% for the TI surfaces states. The reverse spin-to-charge measurement is an independent confirmation that spin and momentum are locked in the surface states of TI, and offers additional avenues for spin manipulation. It further demonstrates the robustness and versatility of electrical access to the spin system within TI surface states, an important step towards its utilization in TI-based spintronics devices.

Charging effect at grain boundaries of MoS2

Grain boundaries (GBs) are inherent extended defects in chemical vapor deposited (CVD) transition metal dichalcogenide (TMD) films. Characterization of the atomic structure and electronic properties of these GBs is crucial for understanding and controlling the properties of TMDs via defect engineering. Here, we report the atomic and electronic structure of GBs in CVD grown MoS₂ on epitaxial graphene/SiC(0001). Using scanning tunneling microscopy/spectroscopy, we find that GBs mostly consist of arrays of dislocation cores, where the presence of mid-gap states shifts both conduction and valence band edges by up to 1 eV. Our findings demonstrate the first charging effect near GBs in CVD grown MoS₂, providing insights into the significant impact GBs can have on materials properties.

Stochasticity in materials structure, properties, and processing-A review

We review the concept of stochasticity-i.e., unpredictable or uncontrolled fluctuations in structure, chemistry, or kinetic processes-in materials. We first define six broad classes of stochasticity: equilibrium (thermodynamic) fluctuations; structural/compositional fluctuations; kinetic fluctuations; frustration and degeneracy; imprecision in measurements; and stochasticity in modeling and simulation. In this review, we focus on the first four classes that are inherent to materials phenomena. We next develop a mathematical framework for describing materials stochasticity and then show how it can be broadly applied to these four materials-related stochastic classes. In subsequent sections, we describe structural and compositional fluctuations at small length scales that modify material properties and behavior at larger length scales; systems with engineered fluctuations, concentrating primarily on composite materials; systems in which stochasticity is developed through nucleation and kinetic phenomena; and configurations in which constraints in a given system prevent it from attaining its ground state and cause it to attain several, equally likely (degenerate) states. We next describe how stochasticity in these processes results in variations in physical properties and how these variations are then accentuated by-or amplify-stochasticity in processing and manufacturing procedures. In summary, the origins of materials stochasticity, the degree to which it can be predicted and/or controlled, and the possibility of using stochastic descriptions of materials structure, properties, and processing as a new degree of freedom in materials design are described.

Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator

Topological superconductivity is central to a variety of novel phenomena involving the interplay between topologically ordered phases and broken-symmetry states. The key ingredient is an unconventional order parameter, with an orbital component containing a chiral p x  + ip y wave term. Here we present phase-sensitive measurements, based on the quantum interference in nanoscale Josephson junctions, realized by using Bi2Te3 topological insulator. We demonstrate that the induced superconductivity is unconventional and consistent with a sign-changing order parameter, such as a chiral p x  + ip y component. The magnetic field pattern of the junctions shows a dip at zero externally applied magnetic field, which is an incontrovertible signature of the simultaneous existence of 0 and π coupling within the junction, inherent to a non trivial order parameter phase. The nano-textured morphology of the Bi2Te3 flakes, and the dramatic role played by thermal strain are the surprising key factors for the display of an unconventional induced order parameter.

Role of lattice inhomogeneities on the electronic properties of selenium deficient Bi2Se3

Inter-layer coupling is widely considered to play a crucial role in tuning electronic properties of 3D topological insulators. The aim of this study is to evaluate the role of crystallographic defects on inter-layer coupling in the Se deficient Bi₂Se₃ (0 0 3) crystal using extended x-ray absorption fine structure spectroscopy (EXAFS) technique. EXAFS measurements at Se-K and Bi-L₃ edges reveal distinct local geometry around these atomic sites. It has been observed that short inter-layer Bi-Se and Se-Se bonds emerge in the sample. This additional structural motif coexists with the conventional crystallographic arrangement. Within the quintuple layer Bi-Se bonds are preserved with slight compression in intra-planer Bi-Bi and Se-Se distance and overall reduction in c/a ratio. These findings suggest formation of deformed lattice region, localized and dispersed inhomogeneously within the sample. Such inhomogeneities have also resulted in interesting transport properties such as quantum Hall effect (QHE), large linear magnetoresistance and π-Berry phase in Shubnikov-de Haas (SdH) oscillations of bulk crystals. Detailed analyses of magnetotransport measurements suggest that tuning of inter-layer coupling by local lattice deformation is the key factor for unusual transport properties. Role of axial strain, and stacking faults generated due to defects and charged Se vacancies are discussed to understand the observed electronic properties.

Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states

Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states with spin–momentum locking. Band bending at the TI surface may also lead to coexisting trivial two-dimensional electron gas (2DEG) states with parabolic energy dispersion. A bias current is expected to generate spin polarization in both systems, although with different magnitude and sign. Here we compare spin potentiometric measurements of bias current-generated spin polarization in Bi₂Se₃(111) where Dirac surface states coexist with trivial 2DEG states, and in InAs(001) where only trivial 2DEG states are present. We observe spin polarization arising from spin–momentum locking in both cases, with opposite signs of the measured spin voltage. We present a model based on spin dependent electrochemical potentials to directly derive the sign expected for the Dirac surface states, and show that the dominant contribution to the current-generated spin polarization in the TI is from the Dirac surface states.

Spin-polarized states arising from either Rashba splitting or topological effects are expected to produce current-induced spin polarization with different magnitude and sign. Here, Li et al. observe current-generated spin polarization in both Bi₂Se₃ (111) and InAs (001) films, with opposite signs of the spin voltage.

Indirect Interlayer Bonding in Graphene-Topological Insulator van der Waals Heterostructure: Giant Spin-Orbit Splitting of the Graphene Dirac States

van der Waals (vdW) heterostructures of two-dimensional materials exhibit properties and functionalities that can be tuned by stacking order and interlayer coupling. Although direct covalent bonding is not expected at the heterojunction, the formation of an interface nevertheless breaks the symmetries of the layers, and the orthogonal requirement of the wave functions can lead to indirect interfacial coupling, creating new properties and functionalities beyond their constituent layers. Here, we fabricate graphene/topological insulator vdW heterostructure by transferring chemical vapor deposited graphene onto Bi2Se3 grown by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we observe a giant spin-orbit splitting of the graphene Dirac states up to 80 meV. Density functional theory calculations further reveal that this splitting of the graphene bands is a consequence of the breaking of inversion symmetry and the orthogonalization requirement on the overlapping wave functions at the interface, rather than simple direct bonding. Our findings reveal two intrinsic characteristics-the symmetry breaking and orthogonalization of the wave functions at the interface-that underlines the properties of vdW heterostructures.

Free-electron creation at the 60° twin boundary in Bi2Te3

Interfaces, such as grain boundaries in a solid material, are excellent regions to explore novel properties that emerge as the result of local symmetry-breaking. For instance, at the interface of a layered-chalcogenide material, the potential reconfiguration of the atoms at the boundaries can lead to a significant modification of the electronic properties because of their complex atomic bonding structure. Here, we report the experimental observation of an electron source at 60° twin boundaries in Bi₂Te₃, a representative layered-chalcogenide material. First-principles calculations reveal that the modification of the interatomic distance at the 60° twin boundary to accommodate structural misfits can alter the electronic structure of Bi₂Te₃. The change in the electronic structure generates occupied states within the original bandgap in a favourable condition to create carriers and enlarges the density-of-states near the conduction band minimum. The present work provides insight into the various transport behaviours of thermoelectrics and topological insulators.

Grain boundaries in polycrystalline materials may offer the opportunity to explore physical phenomena that do not normally occur within the crystal grains. Here, the authors show that twin boundaries in Bi₂Te₃ works as an electron supply for the whole bulk material.

Soft Crystals in Flatland: Unraveling Epitaxial Growth

Thin film epitaxy typically invokes a superposition of a pair of rigid two-dimensional lattices with a well-defined orientation governed by some form of commensurism. A report by Meissner et al. in this issue of ACS Nano demonstrates that the organization of organic molecules on substrates may not be that simple, as static distortion waves involving miniscule shifts of atomic positions from substrate lattice points can lead to orientations of a molecular film that cannot be described by often used models. Herein, we provide some highlights of epitaxy, with a focus on configurations that reflect the delicate balance between intermolecular interactions within a molecular film and molecule-substrate interactions. Although geometric models for explaining and predicting epitaxial configurations can be used to guide synthesis of materials, their use must recognize energetic factors and the possibility of more complex, and possibly less predictable, interface structures.

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3

Heteroepitaxial structures based on Bi2Te3-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth on such TIs. In this process, adatom mobility is a key factor. We demonstrate that Pb mobility on the Bi2Te3(111) surface can be modified by the engineering local strain, ε, which is induced around the point-like defects intrinsically forming in the Bi2Te3(111) thin film grown on a Si(111)-7 × 7 substrate. Scanning tunneling microscopy observations of Pb adatom and cluster distributions and first-principles density functional theory (DFT) analyses of the adsorption energy and diffusion barrier Ed of Pb adatom on Bi2Te3(111) surface show a significant influence of ε. Surprisingly, Ed reveals a cusp-like dependence on ε due to a bifurcation in the position of the stable adsorption site at the critical tensile strain εc ≈ 0.8%. This constitutes a very different strain-dependence of diffusivity from all previous studies focusing on conventional metal or semiconductor surfaces. Kinetic Monte Carlo simulations of Pb deposition, diffusion, and irreversible aggregation incorporating the DFT results reveal adatom and cluster distributions compatible with our experimental observations.

Electrical Detection of the Helical Spin Texture in a p-type Topological Insulator Sb2Te3

The surface states of 3D topological insulators (TIs) exhibit a helical spin texture with spin locked at right angles with momentum. The chirality of this spin texture is expected to invert crossing the Dirac point, a property that has been experimentally observed by optical probes. Here, we directly determine the chirality below the Dirac point by electrically detecting spin-momentum locking in surface states of a p-type TI, Sb2Te3. A current flowing in the Sb2Te3 surface states generates a net spin polarization due to spin-momentum locking, which is electrically detected as a voltage on an Fe/Al2O3 tunnel barrier detector. Measurements of this voltage as a function of current direction and detector magnetization indicate that hole spin-momentum locking follows the right-hand rule, opposite that of electron, providing direct confirmation that the chirality is indeed inverted below Dirac point. The spin signal is linear with current, and exhibits a temperature dependence consistent with the semiconducting nature of the TI film and freeze-out of bulk conduction below 100 K. Our results demonstrate that the chirality of the helical spin texture of TI surface states can be determined electrically, an enabling step in the electrical manipulation of spins in next generation TI-based quantum devices.

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably enlarge the family of van der Waals heterostructures. Despite good understanding of the two individual materials, the electron transport properties of a combined vertical heterojunction are still unknown. Here, we show the experimental realization of a vertical heterojunction between Bi2Se3 nanoplate and monolayer graphene. At low temperatures, the electron transport through the vertical heterojunction is dominated by the tunneling process, which can be effectively tuned by gate voltage to alter the density of states near the Fermi surface. In the presence of a magnetic field, quantum oscillations are observed due to the quantized Landau levels in both graphene and the two-dimensional surface states of Bi2Se3. Furthermore, we observe an exotic gate-tunable tunneling resistance under high magnetic field, which displays resistance maxima when the underlying graphene becomes a quantum Hall insulator.

rGO-Wrapped flowerlike Bi2Se3 nanocomposite: synthesis, experimental and simulation-based investigation on cold cathode applications

Bi₂Se₃ nanoflowers (NFs) – reduced graphene oxide (rGO) nanocomposite (BG) synthesized via cost-effective, ecofriendly and easy hydrothermal route: smart cold cathode for future display device.

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

The group V-VI chalcogenide semiconductors (Bi2 Se3 , Bi2 Te3 , and Sb2 Te3 ) have long been known as thermoelectric materials. Recently, they have been once more generating interest because Bi2 Se3 , Bi2 Te3 and Sb2 Te3 have been crowned as 3D topological insulators (TIs), which have insulating bulk gaps and metallic Dirac surface states. One big challenge in the study of TIs is the lack of high-quality materials with few defects and insulating bulk states. To manifest the topological surface states, it is critical to suppress the contribution from the bulk carriers. Controlled production of TI nanostructures that have a large surface-to-volume ratio is an efficient way to reduce the bulk conductance and to significantly enhance the topological surface conduction. In this review article, the recent progress on the preparation of TI nanostructures is highlighted. Basic production methods for TI nanostructures are introduced in detail. Furthermore, several specific production approaches to reduce the residual bulk carriers from defects are summarized. Finally, the progress and the prospects of the production of TI-based heterostructures, which hold promise in both fundamental study and novel applications are discussed.

Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3

Topological insulators exhibit metallic surface states populated by massless Dirac fermions with spin-momentum locking, where the carrier spin lies in-plane, locked at right angles to the carrier momentum. Here, we show that a charge current produces a net spin polarization via spin-momentum locking in Bi2Se3 films, and this polarization is directly manifested as a voltage on a ferromagnetic contact. This voltage is proportional to the projection of the spin polarization onto the contact magnetization, is determined by the direction and magnitude of the charge current, scales inversely with Bi2Se3 film thickness, and its sign is that expected from spin-momentum locking rather than Rashba effects. Similar data are obtained for two different ferromagnetic contacts, demonstrating that these behaviours are independent of the details of the ferromagnetic contact. These results demonstrate direct electrical access to the topological insulators' surface-state spin system and enable utilization of its remarkable properties for future technological applications.

Persistent topological surface state at the interface of Bi2Se3 film grown on patterned graphene

We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher than ∼ 10(19) cm(-3). Our in situ X-ray diffraction study shows that the Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion from the bottom layer without any structural distortion by interfacial strain. The magnetotransport measurements including SdH oscillations stemming from multiple conductance channels reveal that the topological surface state, with the mobility as high as ∼ 0.5 m(2)/(V s), remains intact from the graphene underneath without degradation. Given that the graphene was prepatterned on arbitrary insulating substrates, the TI-based microelectronic design could be exploited. Our study thus provides a step forward to observe the topological surface states at the interface without degradation by tuning the interface between TI and graphene into a measurable current for device application.

Surface-sensitive two-dimensional magneto-fingerprint in mesoscopic Bi2Se3 channels

Periodic Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations have traditionally been observed in lateral transport through patterned mesoscopic loops of diffusive conductors. However, our studies of perpendicular-to-plane magnetotransport in straight-channel, diffusive devices of epitaxial Bi2Se3 surprisingly reveal signatures of Aharonov–Bohm orbits, periodic conductance fluctuation magneto-fingerprints, even though the devices are not explicitly patterned into loops. We show that the length scale of these orbits corresponds to the typical perimeter of triangular terraces found on the surface of these thin film devices, strongly suggesting that the periodic magneto-fingerprint arises from coherent scattering of electron waves from the step-edges. Our interpretation is bolstered by control measurements in devices without such surface morphology that only show a conventional, aperiodic magneto-fingerprint. These results show that lithographically patterned Bi2Se3 devices provide a novel class of mesoscopic physical systems for systematic studies of coherent surface sensitive transport.

Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy

Here we review the characteristics of "van der Waals epitaxy" (vdWE) as an alternative epitaxy mechanism that has been demonstrated as a viable method for circumventing the lattice matching requirements for epitaxial growth. Particular focus is given on the application of vdWE for nonplanar nanostructures. We highlight our works on the vdWE growth of nanowire arrays, tripods, and tetrapods from various semiconductors (ZnO, ZnTe, CdS, CdSe, CdSxSe1-x, CdTe, and PbS) on muscovite mica substrates, irrespective of the ensuing lattice mismatch. We then address the controllability of the synthesis and the growth mechanism of ZnO nanowires from catalyst-free vdWE in vapor transport growth. As exemplified herein with optical characterizations of ZnO and CdSe nanowires, we show that samples from vdWE may possess properties that are as excellent as those from conventional epitaxy. With our works, we aim to advocate vdWE as a prospective universal growth strategy for nonplanar epitaxial nanostructures.

Charging Dirac states at antiphase domain boundaries in the three-dimensional topological insulator Bi2Se3

Using scanning tunneling microscopy and transmission electron microscopy, we demonstrate the existence of antiphase boundaries between neighboring grains shifted by a fraction of a quintuple layer in epitaxial (0001) films of the three-dimensional topological insulator Bi(2)Se(3). Scanning tunneling spectroscopy and first-principles calculations reveal that these antiphase boundaries provide electrostatic fields on the order of 10(8) V/m that locally charge the Dirac states, modulating the carrier density, and shift the Dirac point by up to 120 meV. This intrinsic electric field effect, demonstrated here near interfaces between Bi(2)Se(3) grains, provides direct experimental evidence at the atomic scale that the Dirac states are indeed robust against extended structural defects and tunable by electric field. These results also shed light on the recent observation of coexistence of Dirac states and two-dimensional electron gas on Bi(2)Se(3) (0001) after adsorption of metal atoms and gas molecules.

Synthesis and quantum transport properties of Bi₂Se₃ topological insulator nanostructures

Bi₂Se₃ nanocrystals with various morphologies, including nanotower, nanoplate, nanoflake, nanobeam and nanowire, have been synthesized. Well-distinguished Shubnikov-de Haas (SdH) oscillations were observed in Bi₂Se₃ nanoplates and nanobeams. Careful analysis of the SdH oscillations suggests the existence of Berry's phase π, which confirms the quantum transport of the surface Dirac fermions in both Bi₂Se₃ nanoplates and nanobeams without intended doping. The observation of the singular quantum transport of the topological surface states implies that the high-quality Bi₂Se₃ nanostructures have superiorities for investigating the novel physical properties and developing the potential applications.