Direct measurement of the Fermi energy in graphene using a double-layer heterostructure

Imaging of ultrafast photoexcited electron dynamics in pentacene nanocrystals on a graphite substrate

Understanding molecular film growth on substrates and the ultrafast electron dynamics at their interface is crucial for advancing next-generation organic electronics. We have focused on studying the ultrafast photoexcited electron dynamics in nanoscale organic crystals of an aromatic molecule, pentacene, on a two-dimensional material of graphite substrate. Through the use of time-resolved two-photon photoelectron emission microscopy (2P-PEEM), we have visualized the ultrafast lateral evolution of photoexcited electrons. By resonantly tuning the incident photon to excite pentacene molecules, polarization-dependent 2P-PEEM has revealed that pentacene nanocrystals (sub- to several μm) on the substrate exhibit a preferential orientation, in which a molecular π-orbital contacts the substrate in a "lying flat" orientation, facilitating electron transfer to the substrate. The time-resolved 2P-PEEM captures the motion of excited electrons in a femto- to pico-second timescale, clearly imaging the ultrafast charge transfer and lateral expansion two-dimensionally on the graphite substrate. Moreover, we found that the lying-flat molecular orientation of pentacene nanocrystals is transformable into a "standing-up" one through gentle heating up to 50 °C. These experimental insights using time-resolved 2P-PEEM will be highly valuable in enhancing the photofunctionalities of organic electronic devices by controlled molecular deposition.

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

The flat bands in magic-angle twisted bilayer graphene (MATBG) provide an especially rich arena to investigate interaction-driven ground states. While progress has been made in identifying the correlated insulators and their excitations at commensurate moiré filling factors, the spin-valley polarizations of the topological states that emerge at high magnetic field remain unknown. Here we introduce a technique based on twist-decoupled van der Waals layers that enables measurement of their electronic band structure and-by studying the backscattering between counter-propagating edge states-the determination of the relative spin polarization of their edge modes. We find that the symmetry-broken quantum Hall states that extend from the charge neutrality point in MATBG are spin unpolarized at even integer filling factors. The measurements also indicate that the correlated Chern insulator emerging from half filling of the flat valence band is spin unpolarized and suggest that its conduction band counterpart may be spin polarized.

Calculating and analyzing time delay in zigzag graphene nanoscrolls based complementary metal-oxide-semiconductors

Graphene Nano Scrolls (GNSs) and Zigzag graphene nanoscrolls (ZGNSs) are semi-one-dimensional materials with exceptional electrical and optical properties, making them attractive to be used in nanoelectronics and complementary metal-oxide-semiconductor (CMOS) technology. With in CMOS device technology, time delay is a crucial issue in the design and implementation of CMOS based ZGNSs. Current paper focus is on ZGNSs application in the channel area of metal-oxide-semiconductor field-effect transistors (MOSFETs) in CMOS technology. We studied analytically, the importance of different parameters on time delay reduction, resulting in faster switching and higher frequency in integrated circuits (ICs). The results of this research demonstrates that, the ZGNS-based CMOS proves considerable variations in the current due to the geometrical parameters, such as chirality number, channel length, and nanoscroll length which can be engineered to produce faster ICs.

Engineering correlated insulators in bilayer graphene with a remote Coulomb superlattice

Electron superlattices allow the engineering of correlated and topological quantum phenomena. The recent emergence of moiré superlattices in two-dimensional heterostructures has led to exciting discoveries related to quantum phenomena. However, the requirement for the moiré pattern poses stringent limitations, and its potential cannot be switched on and off. Here, we demonstrate remote engineering and on/off switching of correlated states in bilayer graphene. Employing a remote Coulomb superlattice realized by localized electrons in twisted bilayer WS2, we impose a Coulomb superlattice in the bilayer graphene with period and strength determined by the twisted bilayer WS2. When the remote superlattice is turned off, the two-dimensional electron gas in the bilayer graphene is described by a Fermi liquid. When it is turned on, correlated insulating states at both integer and fractional filling factors emerge. This approach enables in situ control of correlated quantum phenomena in two-dimensional materials hosting a two-dimensional electron gas.

Gate-controlled suppression of light-driven proton transport through graphene electrodes

Recent experiments demonstrated that proton transport through graphene electrodes can be accelerated by over an order of magnitude with low intensity illumination. Here we show that this photo-effect can be suppressed for a tuneable fraction of the infra-red spectrum by applying a voltage bias. Using photocurrent measurements and Raman spectroscopy, we show that such fraction can be selected by tuning the Fermi energy of electrons in graphene with a bias, a phenomenon controlled by Pauli blocking of photo-excited electrons. These findings demonstrate a dependence between graphene's electronic and proton transport properties and provide fundamental insights into molecularly thin electrode-electrolyte interfaces and their interaction with light.

Chemical Potential Characterization of Symmetry-Breaking Phases in a Rhombohedral Trilayer Graphene

Rhombohedral trilayer graphene has recently emerged as a natural flat-band platform for studying interaction-driven symmetry-breaking phases. The displacement field (D) can further flatten the band to enhance the density of states, thereby controlling the electronic correlation that tips the energy balance between spin and valley degrees of freedom. To characterize the energy competition, chemical potential measurement─a direct thermodynamic probe of Fermi surfaces─is highly demanding to be conducted under a constant D. In this work, we characterize D-dependent isospin flavor polarization, where electronic states with isospin degeneracies of one and two can be identified. We also developed a method to measure the chemical potential at a fixed D, allowing for the extraction of energy variation during phase transitions. Furthermore, symmetry breaking could also be invoked in Landau levels, manifesting as quantum Hall ferromagnetism. Our work opens more opportunities for the thermodynamic characterization of displacement-field tuned van der Waals heterostructures.

Electrically tunable graphene-based multi-band terahertz metamaterial filters

In this study, we have designed an electrically tunable multi-band terahertz (THz) metamaterial filter based on graphene and multiple-square-loop structures. The structure contains multiple metal square loops, and these loops with different sizes correspond to different THz frequencies, achieving our expected efficacy of a multiband wave filter. Furthermore, by sweeping external voltages, we could change graphene's Fermi levels, and thus the high-sensitivity THz filter's capability from single-band to multi-band filtering can be modulated. We expect that this study of a hybrid THz wave filter would be promising for the development of selecting channels in THz and 6 G communications.

Electron-Phonon Coupling in a Magic-Angle Twisted-Bilayer Graphene Device from Gate-Dependent Raman Spectroscopy and Atomistic Modeling

The importance of phonons in the strong correlation phenomena observed in twisted-bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band line width in TBG devices of twist angles θ = 0° (Bernal), ∼1.1° (magic-angle), and ∼7° (large-angle). The results show a broad and p-/n-asymmetric doping behavior at the magic angle, in clear contrast to the behavior observed in twist angles above and below this point. Atomistic modeling reproduces the experimental observations in close connection with the joint density of electronic states in the electron-phonon scattering process, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band line width. Overall, the value of the G band line width in magic-angle TBG is larger when compared to that of the other samples, in qualitative agreement with our calculations.

Positron charge sensing using a double-gated graphene field effect transistor

We utilize a high-mobility double-gated graphene field-effect transistor to measure the accumulated charge created by positron annihilation in its back-gate. The device consists of an exfoliated graphene flake stacked between two hexagonal boron nitride flakes placed on a 1 cm² substrate of 500 μm thick conducting p-doped Si capped by 285 nm-thick SiO₂. The device is placed in close proximity to a 780 kBq ²²Na positron source emitting a constant flux of positrons. During the measurement, positrons annihilate within the back-gate, kept floating using a low-capacitance relay. The accumulated positive charge capacitively couples to the graphene device and builds a positive voltage, detectable through a shift in the top-gate dependent graphene resistance characteristic. The shift in the position of the top-gate Dirac peak is then used for extracting the exact voltage buildup and quantitative evaluation of the accumulated charge. Reaching a positron current sensitivity of ∼1.2 fA/Hz, detected over 20 min, our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

Robust Quantum Oscillation of Dirac Fermions in a Single-Defect Resonant Transistor

The massless nature of Dirac Fermions produces large energy gaps between Landau levels (LLs), which is promising for topological devices. While the energy gap between the zeroth and first LLs reaches 36 meV in a magnetic field of 1 T in graphene, exploiting the quantum Hall effect at room temperature requires large magnetic fields (∼30 T) to overcome the energy level broadening induced by charge inhomogeneities in the device. Here, we report a way to use the robust quantum oscillations of Dirac Fermions in a single-defect resonant transistor, which is based on local tunneling through a thin (∼1.4 nm) hexagonal boron nitride (h-BN) between lattice-orientation-aligned graphene layers. A single point defect in the h-BN, selected by the orientation-tuned graphene layers, probes local LLs in its proximity, minimizing the energy broadening of the LLs by charge inhomogeneity at a moderate magnetic field and ambient conditions. Thus, the resonant tunneling between lattice-orientation-aligned graphene layers highlights the potential to spectroscopically locate the atomic defects in the h-BN, which contributes to the study on electrically tunable single photon source via defect states in h-BN.

Flavour Hund's coupling, Chern gaps and charge diffusivity in moiré graphene

Interaction-driven spontaneous symmetry breaking lies at the heart of many quantum phases of matter. In moiré systems, broken spin/valley 'flavour' symmetry in flat bands underlies the parent state from which correlated and topological ground states ultimately emerge^1-10. However, the microscopic mechanism of such flavour symmetry breaking and its connection to the low-temperature phases are not yet understood. Here we investigate the broken-symmetry many-body ground state of magic-angle twisted bilayer graphene (MATBG) and its nontrivial topology using simultaneous thermodynamic and transport measurements. We directly observe flavour symmetry breaking as pinning of the chemical potential at all integer fillings of the moiré superlattice, demonstrating the importance of flavour Hund's coupling in the many-body ground state. The topological nature of the underlying flat bands is manifested upon breaking time-reversal symmetry, where we measure energy gaps corresponding to Chern insulator states with Chern numbers 3, 2, 1 at filling factors 1, 2, 3, respectively, consistent with flavour symmetry breaking in the Hofstadter butterfly spectrum of MATBG. Moreover, concurrent measurements of resistivity and chemical potential provide the temperature-dependent charge diffusivity of MATBG in the strange-metal regime¹¹-a quantity previously explored only in ultracold atoms¹². Our results bring us one step closer to a unified framework for understanding interactions in the topological bands of MATBG, with and without a magnetic field.

Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal

Stacking order has a strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30°-twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30°-twisted bilayer graphene (30°-tBLG) is determined to have quasicrystal-like symmetry. The electronic properties and interlayer coupling of the 30°-tBLG are investigated using scanning tunneling microscopy and spectroscopy. The energy-dependent local density of states with in situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG and provides insights on the electronic properties and interlayer coupling in this intriguing system.

Frictional Drag Effect between Massless and Massive Fermions in Single-Layer/Bilayer Graphene Heterostructures

The emergence of two-dimensional layered materials offers an excellent opportunity for the fabrication of double-layer electron systems that are in close proximity but electronically isolated. In this work, heterostructures consisting of one single-layer graphene (SLG) and one bilayer graphene (BLG) separated by an ultrathin hBN layer are successfully fabricated, enabling the experimental investigation of the interlayer frictional drag effect between massless and massive fermions. With varying carrier densities, a giant positive peak of drag response emerges at the double neutrality point, around which nonmonotonic temperature dependent behaviors of drag resistance are further observed. These observations can be attributed to the anticorrelations in the distributions of e-h puddles between layers. More importantly, as the system shifts toward the strong coupling regime, the carrier density dependence of drag resistance R_drag shows a crossover from 1/n³ to 1/n² for the density matched cases, which is a unique characteristic predicted for massless-massive fermion systems. Consequently, a generalized carrier dependent expression (1/(|n_S| + |n_B|)²) is obtained for the strong coupling regime, where n_S and n_B are the carrier densities of SLG and BLG, respectively. Our study provides insight into the electronic frictional effects between massless and massive fermions and thus will promote the investigations of interlayer interactions in hybrid structures hosting different types of carriers.

Guiding Dirac Fermions in Graphene with a Carbon Nanotube

Relativistic massless charged particles in a two-dimensional conductor can be guided by a one-dimensional electrostatic potential, in an analogous manner to light guided by an optical fiber. We use a carbon nanotube to generate such a guiding potential in graphene and create a single mode electronic waveguide. The nanotube and graphene are separated by a few nanometers and can be controlled and measured independently. As we charge the nanotube, we observe the formation of a single guided mode in graphene that we detect using the same nanotube as a probe. This single electronic guided mode in graphene is sufficiently isolated from other electronic states of linear Dirac spectrum continuum, allowing the transmission of information with minimal distortion.

Influence of atmospheric species on the electrical properties of functionalized graphene sheets

We report on the time-dependent influence of atmospheric species on the electrical properties of functionalized graphene sheets (FGSs). When exposed to laboratory air, FGSs exhibit a significant, irreversible decrease in electrical conductance with time, strongly depending on the oxygen content of the FGSs. To separate the roles of charge carrier density and mobility in this aging process, we performed electron transport measurements using a back-gate field-effect transistor architecture. Investigating the position of the Dirac point under different atmospheres, we found that adsorbed atmospheric species result in pronounced p-doping, which - on a short time scale - can be reversed under nitrogen atmosphere. However, on a time scale of several days, the resistance increases irreversibly, while the Dirac point voltage remains constant. From these experiments, we conclude that the aging of FGSs is related to the chemisorption of atmospheric species leading to enhanced carrier scattering due to an increasing amount of sp³- regions and thus to a reduced charge carrier mobility.

Epitaxial graphene for quantum resistance metrology

Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer graphene growth methods for uniform material properties and optimized device fabrication techniques. Precision measurements of the quantized Hall resistance showing the advantage of graphene over GaAs-based resistance standards demonstrate the remarkable achievements realized by the research community. This work provides an overview over the state-of-the-art technologies in this field.

Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene

Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley, providing eight-fold degeneracy in the low energy states. We have investigated broken-symmetry quantum Hall (QH) states and their transitions due to the interplay of the relative strength of valley, spin and layer polarizations in twisted bilayer graphene. The energy gaps of the broken-symmetry QH states show an electron-hole asymmetric behaviour, and their dependence on the induced displacement field are opposite between even and odd filling factor states. These results strongly suggest that the QH states with broken valley and spin symmetries for individual layer become hybridized via interlayer tunnelling, and the hierarchy of the QH states is sensitive to both magnetic field and displacement field due to charge imbalance between layers.

Graphene thermal flux transistor

Insufficient flexibility of existing approaches to controlling the thermal transport in atomic monolayers limits their capability for use in many applications. Here, we examine the means of electrode doping to control the thermal flux Q due to phonons propagating along the atomic monolayer. We found that the frequency of the electron-restricted phonon scattering strongly depends on the concentration n_C. of the electric charge carriers, established by the electric potentials applied to local gates. As a result of the electrode doping, n_C is increased, causing a sharp rise in both the electrical conductivity and Seebeck coefficient, while the thermal conductivity tumbles. Therefore, the effect of the thermal transistor improves the figure of merit of nanoelectronic circuits.

Gate-Tunable Landau Level Filling and Spectroscopy in Coupled Massive and Massless Electron Systems

We report transport studies on coupled massive and massless electron systems, realized using twisted monolayer-graphene-natural bilayer-graphene stacks. We incorporate the layers in a dual-gated transistor geometry enabling independently tuning their charge density and the perpendicular electric field. In a perpendicular magnetic field, we observe a distinct pattern of gate-tunable Landau level crossings. Screening and interlayer electron-electron interactions yield a nonlinear monolayer gate capacitance. Data analysis enables determination of the monolayer's Fermi velocity and the bilayer's effective mass. The mass obtained is larger than that expected for isolated bilayers, suggesting that the interlayer interactions renormalize the band structure.

Anomalous Interlayer Transport of Quantum Hall Bilayers in the Strongly Josephson-Coupled Regime

We investigate Josephson coupling in a closely spaced quantum Hall bilayer. Reduction of the interlayer barrier from the widely used values of 10-12 nm to the present one of 8 nm leads to qualitatively different interlayer transport properties. The breakdown of interlayer coherence can be spatially confined in regions that are smaller than the device size. Such a spatial inhomogeneity depends crucially on the Josephson-coupling strength and can be removed by adding an in-plane magnetic field of about 0.5 T. At higher in-plane fields, the interlayer tunneling I-V curve develops unexpected overshoot features. These results challenge current theoretical understanding and suggest that our bilayer system has entered a previously unexplored regime.

Tunable Graphene-GaSe Dual Heterojunction Device

A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces

Several proposed beyond-CMOS devices based on two-dimensional (2D) heterostructures require the deposition of thin dielectrics between 2D layers. However, the direct deposition of dielectrics on 2D materials is challenging due to their inert surface chemistry. To deposit high-quality, thin dielectrics on 2D materials, a flat lying titanyl phthalocyanine (TiOPc) monolayer, deposited via the molecular beam epitaxy, was employed to create a seed layer for atomic layer deposition (ALD) on 2D materials, and the initial stage of growth was probed using in situ STM. ALD pulses of trimethyl aluminum (TMA) and H2O resulted in the uniform deposition of AlOx on the TiOPc/HOPG. The uniformity of the dielectric is consistent with DFT calculations showing multiple reaction sites are available on the TiOPc molecule for reaction with TMA. Capacitors prepared with 50 cycles of AlOx on TiOPc/graphene display a capacitance greater than 1000 nF/cm(2), and dual-gated devices have current densities of 10(-7)A/cm(2) with 40 cycles.

Gate-tunable resonant tunneling in double bilayer graphene heterostructures

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

Electrostatic coupling between two surfaces of a topological insulator nanodevice

We report on electronic transport measurements of dual-gated nanodevices of the low-carrier density topological insulator (TI) Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3}. In all devices, the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the intersurface capacitance C_{TI} and the surface state energy-density relationship μ(n), which is found to be consistent with independent angle-resolved photoemission spectroscopy measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.

Signatures for Wigner crystal formation in the chemical potential of a two-dimensional electron system

We investigate the evolution of the chemical potential of a two-dimensional electron system (2DES) as a function of density at a fixed magnetic field. By using a bilayer system, changes in the chemical potential of one 2DES are determined from the density variation induced in the second, nearby 2DES. At high magnetic fields around a filling factor of ν=1 or ν=2, the chemical potential jump associated with the condensation in a quantum Hall state exhibits two anomalies symmetrically located around these integer filling factors. They are attributed to the formation of a 2D Wigner crystal of quasiparticles.

Nonlinear magnetotransport theory and Hall induced resistance oscillations in graphene

The quantum oscillations of nonlinear magnetoresistance in graphene that occur in response to a dc current bias are investigated. We present a theoretical model for the nonlinear magnetotransport of graphene carriers. The model is based on the exact solution of the effective Dirac equation in crossed electric and magnetic fields, while the effects of randomly distributed impurities are perturbatively added. To compute the nonlinear current effects, we develop a covariant formulation of the migration center theory. The current is calculated for short- and large-range scatterers. The analysis of the differential resistivity in the large magnetic field region, shows that the extrema of the Shubnikov de Hass oscillations invert when the dc currents exceed a threshold value. These results are in good agreement with experimental observations. In the small magnetic field regime, corresponding to large filling factors, the existence of Hall induced resistance oscillations are predicted for ultra clean graphene samples. These oscillations originate from Landau-Zener tunneling between Landau levels, that are tilted by the strong electric Hall field.

Band offset and negative compressibility in graphene-MoS2 heterostructures

We use electron transport to characterize monolayer graphene-multilayer MoS2 heterostructures. Our samples show ambipolar characteristics and conductivity saturation on the electron branch that signals the onset of MoS2 conduction band population. Surprisingly, the carrier density in graphene decreases with gate bias once MoS2 is populated, demonstrating negative compressibility in MoS2. We are able to interpret our measurements quantitatively by accounting for disorder and using the random phase approximation (RPA) for the exchange and correlation energies of both Dirac and parabolic-band two-dimensional electron gases. This interpretation allows us to extract the energetic offset between the conduction band edge of MoS2 and the Dirac point of graphene.

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.