1
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Kumar P, Lee JH. Interface engineering for facile switching of bulk-strong polarization in Si-compatible vertical superlattices. Sci Rep 2024; 14:6811. [PMID: 38514740 PMCID: PMC10958034 DOI: 10.1038/s41598-024-56997-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Accepted: 03/13/2024] [Indexed: 03/23/2024] Open
Abstract
Ferroelectric thin films incorporating different compositional layers have emerged as a promising approach for enhancing properties and performance of electronic devices. In recent years, superlattices utilizing various interactions between their constituent layers have been used to reveal unusual properties, such as improper ferroelectricity, charged domain walls, and negative capacitance in conventional ferroelectrics. Herein, we report a symmetry scheme based on the interface engineering in which the inherent cell-doubling symmetry allowed atomic distortions (phonons) in any vertically aligned superlattice activate novel interface couplings among atomic distortions of different symmetries and fundamentally improve the ferroelectric properties. In a materialized case, the ionic size difference between Hf4+ and Ce4+ in the HfO2/CeO2 (HCO) ferroelectric/paraelectric superlattice leads to these couplings. These couplings mitigate the phase boundary between polar and non-polar phases, and facilitate polarization switching with a remarkably low coercive field ( E c ) while preserving the original magnitude of the bulk HfO2 polarization and its scale-free ferroelectric characteristics. We show that the cell-doubled distortions present in any vertical superlattice have unique implications for designing low-voltage ferroelectric switching while retaining bulk-strong charge storing capacities in Si-compatible memory candidates.
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Affiliation(s)
- Pawan Kumar
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jun Hee Lee
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
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2
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Paull O, Xu C, Cheng X, Zhang Y, Xu B, Kelley KP, de Marco A, Vasudevan RK, Bellaiche L, Nagarajan V, Sando D. Anisotropic epitaxial stabilization of a low-symmetry ferroelectric with enhanced electromechanical response. NATURE MATERIALS 2022; 21:74-80. [PMID: 34556828 DOI: 10.1038/s41563-021-01098-w] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Accepted: 08/06/2021] [Indexed: 06/13/2023]
Abstract
Piezoelectrics interconvert mechanical energy and electric charge and are widely used in actuators and sensors. The best performing materials are ferroelectrics at a morphotropic phase boundary, where several phases coexist. Switching between these phases by electric field produces a large electromechanical response. In ferroelectric BiFeO3, strain can create a morphotropic-phase-boundary-like phase mixture and thus generate large electric-field-dependent strains. However, this enhanced response occurs at localized, randomly positioned regions of the film. Here, we use epitaxial strain and orientation engineering in tandem-anisotropic epitaxy-to craft a low-symmetry phase of BiFeO3 that acts as a structural bridge between the rhombohedral-like and tetragonal-like polymorphs. Interferometric displacement sensor measurements reveal that this phase has an enhanced piezoelectric coefficient of ×2.4 compared with typical rhombohedral-like BiFeO3. Band-excitation frequency response measurements and first-principles calculations provide evidence that this phase undergoes a transition to the tetragonal-like polymorph under electric field, generating an enhanced piezoelectric response throughout the film and associated field-induced reversible strains. These results offer a route to engineer thin-film piezoelectrics with improved functionalities, with broader perspectives for other functional oxides.
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Affiliation(s)
- Oliver Paull
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, New South Wales, Australia
| | - Changsong Xu
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Xuan Cheng
- Department of Biochemistry and Molecular Biology, Monash University, Clayton, Victoria, Australia
| | - Yangyang Zhang
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, New South Wales, Australia
| | - Bin Xu
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
- School of Physical Science and Technology, Soochow University, Suzhou, China
| | - Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Alex de Marco
- Department of Biochemistry and Molecular Biology, Monash University, Clayton, Victoria, Australia
- ARC Centre of Excellence in Advanced Molecular Imaging, Monash University, Clayton, Victoria, Australia
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Laurent Bellaiche
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Valanoor Nagarajan
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, New South Wales, Australia.
| | - Daniel Sando
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, New South Wales, Australia.
- Mark Wainwright Analytical Centre, University of New South Wales Sydney, Kensington, New South Wales, Australia.
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3
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Liu R, Ulbrandt JG, Hsing HC, Gura A, Bein B, Sun A, Pan C, Bertino G, Lai A, Cheng K, Doyle E, Evans-Lutterodt K, Headrick RL, Dawber M. Role of ferroelectric polarization during growth of highly strained ferroelectric materials. Nat Commun 2020; 11:2630. [PMID: 32457379 PMCID: PMC7251112 DOI: 10.1038/s41467-020-16356-9] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2019] [Accepted: 04/20/2020] [Indexed: 11/24/2022] Open
Abstract
In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure. Here we show that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. This is studied by focusing on the properties of BaTiO3 thin films grown on very thin layers of PbTiO3 using x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. This motivates the concept of polarization engineering as a complementary approach to strain engineering. Ferroelectric (FE) materials are used in a wide range of applications, which often requires sizable FE polarization. Here, the authors report a growth procedure to enhance the FE polarization by exploiting the polarization of a FE substrate during growth to obtain higher strains and polarizations in the final material.
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Affiliation(s)
- Rui Liu
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Jeffrey G Ulbrandt
- Department of Physics and Materials Science Program, University of Vermont, Burlington, VT, 05405, USA
| | - Hsiang-Chun Hsing
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Anna Gura
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Benjamin Bein
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Alec Sun
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Charles Pan
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Giulia Bertino
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Amanda Lai
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Kaize Cheng
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | - Eli Doyle
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA
| | | | - Randall L Headrick
- Department of Physics and Materials Science Program, University of Vermont, Burlington, VT, 05405, USA
| | - Matthew Dawber
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794-3800, USA.
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4
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Yoo TS, Lee SA, Roh C, Kang S, Seol D, Guan X, Bae JS, Kim J, Kim YM, Jeong HY, Jeong S, Mohamed AY, Cho DY, Jo JY, Park S, Wu T, Kim Y, Lee J, Choi WS. Ferroelectric Polarization Rotation in Order-Disorder-Type LiNbO 3 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:41471-41478. [PMID: 30406659 DOI: 10.1021/acsami.8b12900] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder-type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.
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Affiliation(s)
| | | | - Changjae Roh
- Department of Physics and Photon Science , Gwangju Institute of Science and Technology (GIST) , Gwangju 61005 , Korea
| | | | | | - Xinwei Guan
- Materials Science and Engineering , King Abdullah University of Science and Technology , Thuwal 23955-6900 , Saudi Arabia
| | - Jong-Seong Bae
- Busan Center , Korea Basic Science Institute , Busan 46742 , Korea
| | - Jiwoong Kim
- Department of Physics , Pusan National University , Busan 46241 , Korea
| | | | - Hu Young Jeong
- UNIST Central Research Facilities , Ulsan National Institute of Science and Technology , Ulsan 44919 , Korea
| | | | - Ahmed Yousef Mohamed
- IPIT & Department of Physics , Chonbuk National University , Jeonju 54896 , Korea
| | - Deok-Yong Cho
- IPIT & Department of Physics , Chonbuk National University , Jeonju 54896 , Korea
| | - Ji Young Jo
- School of Materials Science and Engineering , Gwangju Institute of Science and Technology (GIST) , Gwangju 61005 , Korea
| | - Sungkyun Park
- Department of Physics , Pusan National University , Busan 46241 , Korea
| | - Tom Wu
- Materials Science and Engineering , King Abdullah University of Science and Technology , Thuwal 23955-6900 , Saudi Arabia
- School of Materials Science and Engineering , University of New South Wales , Sydney , NSW 2052 , Australia
| | | | - Jongseok Lee
- Department of Physics and Photon Science , Gwangju Institute of Science and Technology (GIST) , Gwangju 61005 , Korea
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5
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Liu Y, Zhu YL, Tang YL, Wang YJ, Li S, Zhang SR, Han MJ, Ma JY, Suriyaprakash J, Ma XL. Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO 3/BiFeO 3 Bilayers. ACS APPLIED MATERIALS & INTERFACES 2017; 9:25578-25586. [PMID: 28677952 DOI: 10.1021/acsami.7b04681] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Functional oxide interfaces have received a great deal of attention owing to their intriguing physical properties induced by the interplay of lattice, orbital, charge, and spin degrees of freedom. Atomic-scale precision growth of the oxide interface opens new corridors to manipulate the correlated features in nanoelectronics devices. Here, we demonstrate that both head-to-head positively charged and tail-to-tail negatively charged BiFeO3/PbTiO3 (BFO/PTO) heterointerfaces were successfully fabricated by designing the BFO/PTO film system deliberately. Aberration-corrected scanning transmission electron microscopic mapping reveals a head-to-head polarization configuration present at the BFO/PTO interface, when the film was deposited directly on a SrTiO3 (001) substrate. The interfacial atomic structure is reconstructed, and the interfacial width is determined to be 5-6 unit cells. The polarization on both sides of the interface is remarkably enhanced. Atomic-scale structural and chemical element analyses exhibit that the reconstructed interface is rich in oxygen, which effectively compensates for the positive bound charges at the head-to-head polarized BFO/PTO interface. In contrast to the head-to-head polarization configuration, the tail-to-tail BFO/PTO interface exhibits a perfect coherency, when SrRuO3 was introduced as a buffer layer on the substrates prior to the film growth. The width of this tail-to-tail interface is estimated to be 3-4 unit cells, and oxygen vacancies are supposed to screen the negative polarization bound charge. The formation mechanism of these distinct interfaces was discussed from the perspective of charge redistribution.
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Affiliation(s)
- Ying Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
| | - Shuang Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Si-Rui Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Meng-Jiao Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Jin-Yuan Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, Lanzhou University of Technology , Langongping Road 287, 730050 Lanzhou, China
| | - Jagadeesh Suriyaprakash
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, Lanzhou University of Technology , Langongping Road 287, 730050 Lanzhou, China
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6
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Liu Y, Zhu YL, Tang YL, Wang YJ, Jiang YX, Xu YB, Zhang B, Ma XL. Local Enhancement of Polarization at PbTiO 3/BiFeO 3 Interfaces Mediated by Charge Transfer. NANO LETTERS 2017; 17:3619-3628. [PMID: 28541701 DOI: 10.1021/acs.nanolett.7b00788] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Ferroelectrics hold promise for sensors, transducers, and telecommunications. With the demand of electronic devices scaling down, they take the form of nanoscale films. However, the polarizations in ultrathin ferroelectric films are usually reduced dramatically due to the depolarization field caused by incomplete charge screening at interfaces, hampering the integrations of ferroelectrics into electric devices. Here, we design and fabricate a ferroelectric/multiferroic PbTiO3/BiFeO3 system, which exhibits discontinuities in both chemical valence and ferroelectric polarization across the interface. Aberration-corrected scanning transmission electron microscopic study reveals an 8% elongation of out-of-plane lattice spacing associated with 104%, 107%, and 39% increments of δTi, δO1, and δO2 in the PbTiO3 layer near the head-to-tail polarized interface, suggesting an over ∼70% enhancement of polarization compared with that of bulk PbTiO3. Besides that in PbTiO3, polarization in the BiFeO3 is also remarkably enhanced. Electron energy loss spectrum and X-ray photoelectron spectroscopy investigations demonstrate the oxygen vacancy accumulation as well as the transfer of Fe3+ to Fe2+ at the interface. On the basis of the polar catastrophe model, FeO2/PbO interface is determined. First-principles calculation manifests that the oxygen vacancy at the interface plays a predominate role in inducing the local polarization enhancement. We propose a charge transfer mechanism that leads to the remarkable polarization increment at the PbTiO3/BiFeO3 interface. This study may facilitate the development of nanoscale ferroelectric devices by tailing the coupling of charge and lattice in oxide heteroepitaxy.
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Affiliation(s)
| | | | | | | | | | | | | | - Xiu-Liang Ma
- School of Materials Science and Engineering, Lanzhou University of Technology , Langongping Road 287, 730050 Lanzhou, China
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7
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Hong Z, Damodaran AR, Xue F, Hsu SL, Britson J, Yadav AK, Nelson CT, Wang JJ, Scott JF, Martin LW, Ramesh R, Chen LQ. Stability of Polar Vortex Lattice in Ferroelectric Superlattices. NANO LETTERS 2017; 17:2246-2252. [PMID: 28240913 DOI: 10.1021/acs.nanolett.6b04875] [Citation(s) in RCA: 63] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A novel mesoscale state comprising of an ordered polar vortex lattice has been demonstrated in ferroelectric superlattices of PbTiO3/SrTiO3. Here, we employ phase-field simulations, analytical theory, and experimental observations to evaluate thermodynamic conditions and geometric length scales that are critical for the formation of such exotic vortex states. We show that the stability of these vortex lattices involves an intimate competition between long-range electrostatic, long-range elastic, and short-range polarization gradient-related interactions leading to both an upper and a lower bound to the length scale at which these states can be observed. We found that the critical length is related to the intrinsic domain wall width, which could serve as a simple intuitive design rule for the discovery of novel ultrafine topological structures in ferroic systems.
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Affiliation(s)
- Zijian Hong
- Department of Materials Science and Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Anoop R Damodaran
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Fei Xue
- Department of Materials Science and Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Shang-Lin Hsu
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
- Department of Physics, University of California , Berkeley, California 94720, United States
| | - Jason Britson
- Department of Materials Science and Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Ajay K Yadav
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Christopher T Nelson
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Jian-Jun Wang
- Department of Materials Science and Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - James F Scott
- Schools of Chemistry and Physics, University of St Andrews , St Andrews KY16 9ST, U.K
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
- Department of Physics, University of California , Berkeley, California 94720, United States
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States
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8
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Damodaran AR, Agar JC, Pandya S, Chen Z, Dedon L, Xu R, Apgar B, Saremi S, Martin LW. New modalities of strain-control of ferroelectric thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:263001. [PMID: 27187744 DOI: 10.1088/0953-8984/28/26/263001] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.
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Affiliation(s)
- Anoop R Damodaran
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California, USA
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9
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Boulle A, Infante IC, Lemée N. Diffuse X-ray scattering from 180° ferroelectric stripe domains: polarization-induced strain, period disorder and wall roughness. J Appl Crystallogr 2016. [DOI: 10.1107/s1600576716005331] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Abstract
A key element in ferroic materials is the presence of walls separating domains with different orientations of the order parameter. It is demonstrated that 180° stripe domains in ferroelectric films give rise to very distinct features in their diffuse X-ray scattering (DXS) intensity distributions. A model is developed that allows the determination of not only the domain period but also the period disorder, the thickness and roughness of the domain walls, and the strain induced by the rotation of the polarization. As an example, the model is applied to ferroelectric/paraelectric superlattices. Temperature-dependent DXS measurements reveal that the polarization-induced strain decreases dramatically with increasing temperature and vanishes at the Curie temperature. The motion of ferroelectric domain walls appears to be a collective process that does not create any disorder in the domain period, whereas pinning by structural defects increases the wall roughness. This work will facilitatein situquantitative studies of ferroic domains and domain wall dynamics under the application of external stimuli, including electric fields and temperature.
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10
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He B, Wang Z. Enhancement of the Electrical Properties in BaTiO3/PbZr0.52Ti0.48O3 Ferroelectric Superlattices. ACS APPLIED MATERIALS & INTERFACES 2016; 8:6736-6742. [PMID: 26913563 DOI: 10.1021/acsami.5b12098] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In this study, BaTiO3/Pb(Zr0.52Ti0.48)O3 (BTO/PZT) ferroelectric superlattices have been grown on the Nb-doped SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition, and their electrical properties were investigated in detail. The leakage current was reduced significantly in the BTO/PZT superlattices, and the conduction mechanism could be interpreted as the bulk-limited mechanism. In addition, a more symmetric hysteresis loop was observed in the BTO/PZT superlattices compared with the pure PZT and BTO films. The BTO/PZT superlattices with the modulation thickness of 9.8 nm showed remarkably improved dielectric properties with dielectric constant and loss of 684 and 0.02, respectively, measured at the frequency of 10 kHz. Based on these experimental results, it can be considered that the BTO/PZT interfaces play a very important role for the enhanced electrical properties of the BTO/PZT superlattices.
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Affiliation(s)
- Bin He
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , 72 Wenhua Road, Shenyang 110016, China
| | - Zhanjie Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , 72 Wenhua Road, Shenyang 110016, China
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11
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Ghosh M, Ghosh S, Seibt M, Rao KY, Peretzki P, Mohan Rao G. Ferroelectric origin in one-dimensional undoped ZnO towards high electromechanical response. CrystEngComm 2016. [DOI: 10.1039/c5ce02262b] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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12
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Lemée N, Infante IC, Hubault C, Boulle A, Blanc N, Boudet N, Demange V, Karkut MG. Polarization Rotation in Ferroelectric Tricolor PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 Superlattices. ACS APPLIED MATERIALS & INTERFACES 2015; 7:19906-19913. [PMID: 26315344 DOI: 10.1021/acsami.5b03456] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
In ferroelectric thin films, controlling the orientation of the polarization is a key element to controlling their physical properties. We use laboratory and synchrotron X-ray diffraction to investigate ferroelectric bicolor PbTiO3/PbZr0.2Ti0.8O3 and tricolor PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 superlattices and to study the role of the SrTiO3 layers on the domain structure. In the tricolor superlattices, we demonstrate the existence of 180° ferroelectric stripe nanodomains, induced by the depolarization field produced by the SrTiO3 layers. Each ultrathin SrTiO3 layer modifies the electrostatic boundary conditions between the ferroelectric layers compared to the corresponding bicolor structures, leading to the suppression of the a/c polydomain states. Combined with the electrostatic effect, the tensile strain induced by PbZr0.2Ti0.8O3 in the PbTiO3 layers leads to polarization rotation in the system as evidenced by grazing incidence X-ray measurements. This polarization rotation is associated with the monoclinic Mc phase as revealed by the splitting of the (HHL) and (H0L) reciprocal lattice points. This work demonstrates that the tricolor paraelectric/ferroelectric superlattices constitute a tunable system to investigate the concomitant effects of strains and depolarizing fields. Our studies provide a pathway to stabilize a monoclinic symmetry in ferroelectric layers, which is of particular interest for the enhancement of the piezoelectric properties.
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Affiliation(s)
- Nathalie Lemée
- Laboratoire de Physique de la Matière Condensée, EA 2081, Université de Picardie Jules Verne , 80039 Amiens, France
| | - Ingrid C Infante
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR 8580, Université Paris-Saclay , 92295 Cedex Châtenay-Malabry, France
| | - Cécile Hubault
- Laboratoire de Physique de la Matière Condensée, EA 2081, Université de Picardie Jules Verne , 80039 Amiens, France
| | - Alexandre Boulle
- Sciences des Procédés Céramiques et de Traitements de Surface, CNRS UMR 7315, Centre Européen de la Céramique , 87068 Limoges, France
| | - Nils Blanc
- University of Grenoble Alpes, Institut NEEL , F-38000 Grenoble, France
- CNRS, Institut NEEL , F-38042 Grenoble, France
| | - Nathalie Boudet
- University of Grenoble Alpes, Institut NEEL , F-38000 Grenoble, France
- CNRS, Institut NEEL , F-38042 Grenoble, France
| | - Valérie Demange
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS/Université de Rennes 1 , Campus de Beaulieu, 35042 Rennes, France
| | - Michael G Karkut
- Laboratoire de Physique de la Matière Condensée, EA 2081, Université de Picardie Jules Verne , 80039 Amiens, France
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Thermotropic phase boundaries in classic ferroelectrics. Nat Commun 2014; 5:3172. [DOI: 10.1038/ncomms4172] [Citation(s) in RCA: 108] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2013] [Accepted: 12/20/2013] [Indexed: 11/08/2022] Open
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