Nature of weak magnetism in SrTiO3/LaAlO3 multilayers

Coexistence of Ferromagnetism and Superconductivity at KTaO3 Heterointerfaces

The coexistence of superconductivity and ferromagnetism is a long-standing issue in superconductivity due to the antagonistic nature of these two ordered states. Experimentally identifying and characterizing novel heterointerface superconductors that coexist with magnetism presents significant challenges. Here, we report the observation of two-dimensional long-range ferromagnetic order in a KTaO3 heterointerface superconductor, showing the coexistence of superconductivity and ferromagnetism. Remarkably, our direct current superconducting quantum interference device measurements reveal an in-plane magnetization hysteresis loop persisting above room temperature. Moreover, first-principles calculations and X-ray magnetic circular dichroism measurements provide decisive insights into the origin of the observed robust ferromagnetism, attributing it to oxygen vacancies that localize electrons in nearby Ta 5d states. Our findings suggest KTaO3 heterointerfaces as time-reversal symmetry breaking superconductors, injecting fresh momentum into the exploration of the intricate interplay between superconductivity and magnetism enhanced by the strong spin-orbit coupling inherent to the heavy Ta in 5d orbitals.

Ferroelectric Exchange Bias Affects Interfacial Electronic States

In polar oxide interfaces phenomena such as superconductivity, magnetism, 1D conductivity, and quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and sheds light on the mutual effects between the polar oxide and the ferroelectric oxide. Here, the interface between the polar oxide LaAlO₃ and the ferroelectric Ca-doped SrTiO₃ is studied by means of electrical transport combined with local imaging of the current flow with the use of scanning a superconducting quantum interference device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO₃ layer. Such intrinsic bias combined with ferroelectricity can constrain the possible structural domain tiling near the interface. The use of this intrinsic bias is recommended as a method of controlling and tuning the initial state of ferroelectric materials by the design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.

Unusual Hole and Electron Midgap States and Orbital Reconstructions Induced Huge Ferroelectric Tunneling Electroresistance in BaTiO3/SrTiO3

Oxide heterostructures have attracted a lot of interest because of their rich exotic phenomena and potential applications. Recently, a greatly enhanced tunneling electroresistance (TER) of ferroelectric tunnel junctions (FTJs) has been realized in such heterostructures. However, our understanding on the electronic structure of resistance response with polarization reversal and the origin of huge TER is still lacking. Here, we report on electronic structures, particularly at the interface and surface, and the control of the spontaneous polarization of BaTiO₃ films by changing the termination of a SrTiO₃ substrate. Interestingly, unusual electron and hole midgap states are concurrently formed and accompanied by orbital reconstructions, which determine the ferroelectric polarization orientation in the BaTiO₃/SrTiO₃. Such unusual midgap states, which yield a strong electronic screening effect, reduce the ferroelectric barrier width and height, and pin the ferroelectric polarization, lead to a dramatic enhancement of the TER effect. The midgap states are also observed in BaTiO₃ films on electron-doped Nb/SrTiO₃ revealing its universality. Our result provides new insight into the origin of the huge TER effect and opens a new route for designing ferroelectric tunnel junction-based devices with huge TER through interface engineering.

Orbital Ordering of the Mobile and Localized Electrons at Oxygen-Deficient LaAlO3/SrTiO3 Interfaces

Interfacing different transition-metal oxides opens a route to functionalizing their rich interplay of electron, spin, orbital, and lattice degrees of freedom for electronic and spintronic devices. Electronic and magnetic properties of SrTiO₃-based interfaces hosting a mobile two-dimensional electron system (2DES) are strongly influenced by oxygen vacancies, which form an electronic dichotomy, where strongly correlated localized electrons in the in-gap states (IGSs) coexist with noncorrelated delocalized 2DES. Here, we use resonant soft-X-ray photoelectron spectroscopy to prove the e_g character of the IGSs, as opposed to the t_2g character of the 2DES in the paradigmatic LaAlO₃/SrTiO₃ interface. We furthermore separate the d _xy and d _xz/d _xz orbital contributions based on deeper consideration of the resonant photoexcitation process in terms of orbital and momentum selectivity. Supported by a self-consistent combination of density functional theory and dynamical mean field theory calculations, this experiment identifies local orbital reconstruction that goes beyond the conventional e_g- vs-t_2g band ordering. A hallmark of oxygen-deficient LaAlO₃/SrTiO₃ is a significant hybridization of the e_g and t_2g orbitals. Our findings provide routes for tuning the electronic and magnetic properties of oxide interfaces through "defect engineering" with oxygen vacancies.

Discovery of a magnetic conductive interface in PbZr0.2Ti0.8O3 /SrTiO3 heterostructures

Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the interplay between various degrees of freedom, especially those with polar discontinuities. It is desirable to explore if these structures may generate pure and controllable spin currents, which are needed to attain unmatched performance and energy efficiency in the next-generation spintronic devices. Here we report the emergence of a spin-polarized two-dimensional electron gas (SP-2DEG) at the interface of two insulators, SrTiO₃ and PbZr_0.2Ti_0.8O₃. This SP-2DEG is strongly localized at the interfacial Ti atoms, due to the interplay between Coulomb interaction and band bending, and can be tuned by the ferroelectric polarization. Our findings open a door for engineering ferroelectric/insulator interfaces to create tunable ferroic orders for magnetoelectric device applications and provide opportunities for designing multiferroic materials in heterostructures.

Two-dimensional electron gases that form in some complex oxide heterostructures may have useful functional behavior due to the interaction of the parent materials. Here the authors show that PZT/STO interfaces can host a spin-polarized electron gas, even though the bulk materials are nonmagnetic.

Physics of SrTiO3-based heterostructures and nanostructures: a review

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Angle-resolved photoemission spectroscopy studies of metallic surface and interface states of oxide insulators

Over the last decade, conducting states embedded in insulating transition metal oxides (TMOs) have served as gateways to discovering and probing surprising phenomena that can emerge in complex oxides, while also opening opportunities for engineering advanced devices. These states are commonly realized at thin film interfaces, such as the well-known case of LaAlO3 (LAO) grown on SrTiO3 (STO). In recent years, the use of angle-resolved photoemission spectroscopy (ARPES) to investigate the k-space electronic structure of such materials led to the discovery that metallic states can also be formed on the bare surfaces of certain TMOs. In this topical review, we report on recent studies of low-dimensional metallic states confined at insulating oxide surfaces and interfaces as seen from the perspective of ARPES, which provides a direct view of the occupied band structure. While offering a fairly broad survey of progress in the field, we draw particular attention to STO, whose surface is so far the best-studied, and whose electronic structure is probably of the most immediate interest, given the ubiquitous use of STO substrates as the basis for conducting oxide interfaces. The ARPES studies provide crucial insights into the electronic band structure, orbital character, dimensionality/confinement, spin structure, and collective excitations in STO surfaces and related oxide surface/interface systems. The obtained knowledge increases our understanding of these complex materials and gives new perspectives on how to manipulate their properties.

Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3

The interface between LaAlO₃ (LAO) and SrTiO₃ (STO) has attracted enormous interests due to its rich physical phenomena, such as metallic nature, magnetism and superconductivity. In this work, we report our experimental investigations on the influence of the LAO stoichiometry to the metallic interface. Taking advantage of the oxide molecular beam epitaxy (MBE) technique, a series of high quality LAO films with different nominal La/Al ratios and LAO thicknesses were grown on the TiO₂-terminated STO substrates, where systematic variations of the LAO lattice constant and transport property were observed. In particular, the sheet density can be largely reduced by nearly an order of magnitude with merely about 20% increase in the nominal La/Al ratio. Our finding provides an effective method on tuning the electron density of the two-dimensional electron liquid (2DEL) at the LAO/STO interface.

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity

Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO₃/SrTiO₃, two-dimensional conductive states form to avoid the polar discontinuity, and magnetic properties are found at such an interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a magnetic state, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial magnetic state. As a concrete example, we investigate by first-principles calculations the heterostructures made of ferroelectric perovskite oxide PbTiO₃ and nonferroelectric polarized oxide TiO₂. We show that charge is transferred to the interfacial layer forming an interfacial ferromagnetic ordering that may persist up to room temperature. Especially, the strong coupling between bulk ferroelectric polarization and interface ferromagnetism represents a new type of magnetoelectric effect, which provides an ideal platform for exploring the intriguing interfacial multiferroics. The findings here are important not only for fundamental science but also for promising applications in nanoscale electronics and spintronics.

β-NMR Investigation of the Depth-Dependent Magnetic Properties of an Antiferromagnetic Surface

By measuring the prototypical antiferromagnet α-Fe_{2}O_{3}, we show that it is possible to determine the static spin orientation and dynamic spin correlations within nanometers from an antiferromagnetic surface using the nuclear spin polarization of implanted ^{8}Li^{+} ions detected with β-NMR. Remarkably, the first-order Morin spin reorientation in single crystal α-Fe_{2}O_{3} occurs at the same temperature at all depths between 1 and 100 nm from the (110) surface; however, the implanted nuclear spin experiences an increased 1/T_{1} relaxation rate at shallow depths revealing soft-surface magnons. The surface-localized dynamics decay towards the bulk with a characteristic length of ε=11±1  nm, closely matching the finite-size thresholds of hematite nanostructures.

Kondo effect goes anisotropic in vanadate oxide superlattices

We study the transport properties in SrVO3/LaVO3 (SVO/LVO) superlattices deposited on SrTiO3 (STO) substrates. We show that the electronic conduction occurs in the metallic LVO layers with a galvanomagnetism typical of a 2D Fermi surface. In addition, a Kondo-like component appears in both the thermal variation of resistivity and the magnetoresistance. Surprisingly, in this system where the STO interface does not contribute to the measured conduction, the Kondo correction is strongly anisotropic. We show that the growth temperature allows a direct control of this contribution. Finally, the key role of vanadium mixed valency stabilized by oxygen vacancies is enlightened.

Sensitive detection of NMR for thin films

NMR can provide valuable information about thin films, but its relatively low sensitivity allows data acquisition only from bulk samples. The sensitivity problem is circumvented by detection schemes with higher sensitivity and/or enhanced polarization. In most of these ingenious techniques, electrons play a central role through hyperfine interactions with the nuclei of interest or the conversion of the spin orientation to an electric charge. The state of the art in NMR is the control of a single nuclear spin state, the complete form of which is one of the ultimate goals of nanotechnology.

Interface Energetics and Charge Carrier Density Amplification by Sn-Doping in LaAlO3/SrTiO3 Heterostructure

Tailoring the two-dimensional electron gas (2DEG) at the n-type (TiO2)(0)/(LaO)(+1) interface between the polar LaAlO3 (LAO) and nonpolar SrTiO3 (STO) insulators can potentially provide desired functionalities for next-generation low-dimensional nanoelectronic devices. Here, we propose a new approach to tune the electronic and magnetic properties in the n-type LAO/STO heterostructure (HS) system via electron doping. In this work, we modeled four types of layer doped LAO/STO HS systems with Sn dopants at different cation sites and studied their electronic structures and interface energetics by using first-principles electronic structure calculations. We identified the thermodynamic stability conditions for each of the four proposed doped configurations with respect to the undoped LAO/STO interface. We further found that the Sn-doped LAO/STO HS system with Sn at Al site (Sn@Al) is energetically most favorable with respect to decohesion, thereby strengthening the interface, while the doped HS system with Sn at La site (Sn@La) exhibits the lowest interfacial cohesion. Moreover, our results indicate that all the Sn-doped LAO/STO HS systems exhibit the n-type conductivity with the typical 2DEG characteristics except the Sn@La doped HS system, which shows p-type conductivity. In the Sn@Al doped HS model, the Sn dopant exists as a Sn(4+) ion and introduces one additional electron into the HS system, leading to a higher charge carrier density and larger magnetic moment than that of all the other doped HS systems. An enhanced charge confinement of the 2DEG along the c-axis is also found in the Sn@Al doped HS system. We hence suggest that Sn@Al doping can be an effective way to enhance the electrical conduction and magnetic moment of the 2DEG in LAO/STO HS systems in an energetically favorable manner.

Antiferromagnetism of two-dimensional electronic gas on light-irradiated SrTiO3 and at LaAlO3/SrTiO3 interfaces

To gain an insight into the origin of tunable two-dimensional (2D) electronic liquid at the interfaces of transition-metal oxides, we address properties of a conducting layer on the light-irradiated surfaces of SrTiO3; the energy spectrum of the latter is known and consists of the titanium dxz/dyz and dxy bands. Recently, Santander-Syro et al (2014 Nature Mater. 13 1085) revealed that the dxy bands actually comprise two chiral branches with the Kramers degeneracy at the zone center lifted in the absence of a magnetic moment. We suggest that interacting electrons on the irradiated SrTiO3 go over into a magnetic phase as the result of one of the instabilities of the 2D Fermi liquid with exchange interactions, and point out the concrete antiferromagnetic order parameter. Large energy scales of the order of Fermi energy ∼0.1 eV inherent in this mechanism warrant stability of the magnetic ground state against ever-present effects of disorder. Arguments are given that electrons at the irradiated SrTiO3 surface and at the LaAlO3/SrTiO3 interfaces undergo a kind of first-order transformation into one and the same phase of the 2D electronic Fermi liquid with reduced magnetic symmetry.

Implanted-ion βNMR: A new probe for nanoscience

NMR detected by radioactive beta decay, β-NMR, is undergoing a renaissance largely due to the availability of high intensity low energy beams of the most common probe ion, Li+8, and dedicated facilities for materials research. The radioactive detection scheme, combined with the low energy ion beam, enable depth resolved NMR measurements in crystals, thin films and multilayers on depth scales of 2-200 nm. After a brief historical introduction, technical aspects of implanted-ion β-NMR are presented, followed by a review of recent applications to a wide range of solids.

Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure

The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals.

Enhanced high-frequency molecular dynamics in the near-surface region of polystyrene thin films observed with β-NMR

β-detected nuclear spin relaxation of (8)Li(+) has been used to probe the depth dependence of molecular dynamics in high- and low-molecular-weight deuterated polystyrene. The average nuclear spin-lattice relaxation rate, 1/T(avg)(1), is a measure of the spectral density of the polymer motion at the Larmor frequency (41 MHz at 6.55 T). In both samples, 1/T(avg)(1) is depth independent below ∼200 K but above this temperature it decreases approximately exponentially with distance from the free surface, returning to bulk behavior for depths greater than ∼10 nm. This is direct evidence for a region near the free surface with enhanced molecular dynamics compared with the bulk. The effective thickness of the surface region increases with increasing temperature and is finite even above the glass transition. These results present challenges for the current understanding of dynamics near the surface of polymer glasses.

Abnormal room temperature ferromagnetism in CuO–ZnO heterostructures: interface related or not?

We report the new functionality of room temperature ferromagnetism in CuO–ZnO heterostructures.

Anomalous magnetic ground state in an LaAlO3/SrTiO3 interface probed by transport through nanowires

Resistance as a function of temperature down to 20 mK and magnetic fields up to 18 T for various carrier concentrations is measured for nanowires made from the SrTiO3/LaAlO3 interface using a hard mask shadow deposition technique. The narrow width of the wires (of the order of 50 nm) allows us to separate out the magnetic effects from the dominant superconducting ones at low magnetic fields. At this regime hysteresis loops are observed along with the superconducting transition. From our data analysis, we find that the magnetic order probed by the giant magnetoresistance effect vanishes at TCurie=954±20  mK. This order is not a simple ferromagnetic state but consists of domains with opposite magnetization having a preferred in-plane orientation.

Density-functional prediction of a surface magnetic phase in SrTiO(3)/LaAlO(3) heterostructures induced by Al vacancies

Based on first-principles density functional calculations we propose a novel Al vacancy induced ferromagnetism occurring at the LaAlO(3) surface of SrTiO(3)/LaAlO(3) bilayers. Magnetism at cation vacancies away from the surface is quenched due to charge compensation. Magnetic surface Al vacancies are stabilized due to the built-in electric field inside the LaAlO(3) region that raises the energy of the defect level, making charge compensation unfavorable. Surface Al vacancies prefer to form clusters and exhibit two-dimensional ferromagnetic alignment mediated by a long-range magnetic interaction. These results are discussed in light of recent experimental observations.

Direct spectroscopic observation of a shallow hydrogenlike donor state in insulating SrTiO3

We present a direct spectroscopic observation of a shallow hydrogenlike muonium state in SrTiO(3) which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below ∼ 70K. From the temperature dependence we estimate an activation energy of ∼ 50 meV in the bulk and ∼ 23 meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO(3). The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO(3)-based oxide interface systems.

Tuning ferromagnetism at interfaces between insulating perovskite oxides

We use density functional theory calculations to show that the LaAlO3|SrTiO3 interface between insulating perovskite oxides is borderline in satisfying the Stoner criterion for itinerant ferromagnetism and explore other oxide combinations with a view to satisfying it more amply. The larger lattice parameter of a LaScO3|BaTiO3 interface is found to be less favorable than the greater interface distortion of LaAlO3|CaTiO3. Compared to LaAlO3|SrTiO3, the latter is predicted to exhibit robust magnetism with a larger saturation moment and a higher Curie temperature. Our results provide support for a "two phase" picture of coexistent superconductivity and ferromagnetism.

β-NMR measurements of lithium ion transport in thin films of pure and lithium-salt-doped poly(ethylene oxide)

β-Detected nuclear spin relaxation of (8)Li(+) has been used to study the microscopic diffusion of lithium ions in thin films of poly(ethylene oxide) (PEO), where the implanted lithium ions are present in extremely low concentration, and PEO with 30 wt % LiCF3SO3 over a wide range of temperatures both above and below the glass transition temperature. Recent measurements by Do et al. [Phys. Rev. Lett. 2013, 111, 018301] found that the temperature dependence of the Li(+) conductivity was identical to that of the dielectric α relaxation and was well described by the Vogel-Fulcher-Tammann relation, implying the α relaxation dominates the Li(+) transport process. In contrast, we find the hopping of Li(+) in both samples in the high temperature viscoelastic phase follows an Arrhenius law and depends significantly on the salt content. We propose that the hopping of Li(+) between cages involves motion of the polymer but that it is only for long-range diffusion where the α relaxation plays an important role.

Reversible insulator-metal transition of LaAlO₃/SrTiO₃ interface for nonvolatile memory

We report a new type of memory device based on insulating LaAlO₃/SrTiO₃ (LAO/STO) hetero-interface. The microstructures of the LAO/STO interface are characterized by Cs-corrected scanning transmission electron microscopy, which reveals the element intermixing at the interface. The inhomogeneous element distribution may result in carrier localization, which is responsible for the insulating state. The insulating state of such interface can be converted to metallic state by light illumination and the metallic state maintains after light off due to giant persistent photoconductivity (PPC) effect. The on/off ratio between the PPC and the initial dark conductance is as large as 10⁵. The metallic state also can be converted back to insulating state by applying gate voltage. Reversible and reproducible resistive switching makes LAO/STO interface promising as a nonvolatile memory. Our results deepen the understanding of PPC phenomenon in LAO/STO, and pave the way for the development of all-oxide electronics integrating information storage devices.

Origin of interface magnetism in BiMnO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures

Possible ferromagnetism induced in otherwise nonmagnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetism can be stabilized by a negative exchange interaction between the electrons transferred to the interface and local magnetic moments. These local magnetic moments are associated with magnetic Ti3+ ions at the interface itself for LaAlO3/SrTiO3 and to Mn3+ ions in the overlayer for BiMnO3/SrTiO3. In LaAlO3/SrTiO3 the induced magnetism is quenched by annealing in oxygen, suggesting a decisive role of oxygen vacancies in this phenomenon.

Titanium dxy ferromagnetism at the LaAlO3/SrTiO3 interface

A number of recent transport and magnetization studies have shown signs of ferromagnetism in the LaAlO3/SrTiO3 heterostructure, an unexpected property with no bulk analogue in the constituent materials. However, no experiment thus far has provided direct information on the host of the magnetism. Here we report spectroscopic investigations of the magnetism using element-specific techniques, including X-ray magnetic circular dichroism and X-ray absorption spectroscopy, along with corresponding model calculations. We find direct evidence for in-plane ferromagnetic order at the interface, with Ti(3+) character in the dxy orbital of the anisotropic t2g band. These findings establish a striking example of emergent phenomena at oxide interfaces.

Gate-tunable polarized phase of two-dimensional electrons at the LaAlO3/SrTiO3 interface

Controlling the coupling between localized spins and itinerant electrons can lead to exotic magnetic states. A novel system featuring local magnetic moments and extended 2D electrons is the interface between LaAlO3 and SrTiO3. The magnetism of the interface, however, was observed to be insensitive to the presence of these electrons and is believed to arise solely from extrinsic sources like oxygen vacancies and strain. Here we show the existence of unconventional electronic phases in the LaAlO3/SrTiO3 system pointing to an underlying tunable coupling between itinerant electrons and localized moments. Using anisotropic magnetoresistance and anomalous Hall effect measurements in a unique in-plane configuration, we identify two distinct phases in the space of carrier density and magnetic field. At high densities and fields, the electronic system is strongly polarized and shows a response, which is highly anisotropic along the crystalline directions. Surprisingly, below a density-dependent critical field, the polarization and anisotropy vanish whereas the resistivity sharply rises. The unprecedented vanishing of the easy axes below a critical field is in sharp contrast with other coupled magnetic systems and indicates strong coupling with the moments that depends on the symmetry of the itinerant electrons. The observed interplay between the two phases indicates the nature of magnetism at the LaAlO3/SrTiO3 interface as both having an intrinsic origin and being tunable.