1
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Yang C, Li J, Liu X, Bai C. The tunable anisotropic Rashba spin-orbit coupling effect in Pb-adsorbed Janus monolayer WSeTe. Phys Chem Chem Phys 2023; 25:28796-28806. [PMID: 37850507 DOI: 10.1039/d3cp03331g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
The spin-splitting properties of Pb-adsorbed monolayer Janus WSeTe are investigated based on first-principles calculations. The adsorbed system shows large Rashba splitting (the Rashba parameter is up to 0.75 eV Å), and we find that different adsorption layers (Te/Se adsorption layers) exhibit different significant features under spin-orbit coupling. Zeeman splitting and Rashba splitting co-exist at the high symmetry Γ point of the Te adsorption layer, while the Se adsorption layer exhibits anisotropic Rashba spin-orbit coupling. It was determined using k·p perturbation theory that Pb atom adsorption reduces the initial symmetry of the 2H-WSeTe monolayer and induces a strong spin-orbit coupling effect, so as to induce the anisotropic Rashba effect. Furthermore, the tunability of Rashba splitting was demonstrated by varying the adsorption concentration, adjusting the adsorption distance, and applying biaxial strain. This predicted adsorption system has potential value in spintronic devices.
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Affiliation(s)
- Can Yang
- School of Science, Hebei University of Technology, Tianjin 300401, P. R. China.
| | - Jia Li
- School of Science, Hebei University of Technology, Tianjin 300401, P. R. China.
| | - Xiaoli Liu
- School of Science, Hebei University of Technology, Tianjin 300401, P. R. China.
| | - Congling Bai
- School of Science, Hebei University of Technology, Tianjin 300401, P. R. China.
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2
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Lopes V, Chiappe G, Ribeiro LC, Anda EV. Totally Spin-Polarized Currents in an Interferometer with Spin-Orbit Coupling and the Absence of Magnetic Field Effects. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4082. [PMID: 36432367 PMCID: PMC9696532 DOI: 10.3390/nano12224082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Revised: 11/14/2022] [Accepted: 11/16/2022] [Indexed: 06/16/2023]
Abstract
The paper studies the electronic current in a one-dimensional lead under the effect of spin-orbit coupling and its injection into a metallic conductor through two contacts, forming a closed loop. When an external potential is applied, the time reversal symmetry is broken and the wave vector k of the circulating electrons that contribute to the current is spin-dependent. As the wave function phase depends upon the vector k, the closed path in the circuit produces spin-dependent current interference. This creates a physical scenario in which a spin-polarized current emerges, even in the absence of external magnetic fields or magnetic materials. It is possible to find points in the system's parameter space and, depending upon its geometry, the value of the Fermi energy and the spin-orbit intensities, for which the electronic states participating in the current have only one spin, creating a high and totally spin-polarized conductance. For a potential of a few tens of meV, it is possible to obtain a spin-polarized current of the order of μA. The properties of the obtained electronic current qualify the proposed device as a potentially important tool for spintronics applications.
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Affiliation(s)
- Victor Lopes
- Departamento de Física Aplicada, Universidad de Alicante, San Vicente del Raspeig, 03690 Alicante, Spain
| | - Guillermo Chiappe
- Departamento de Física Aplicada, Universidad de Alicante, San Vicente del Raspeig, 03690 Alicante, Spain
| | - Laercio C. Ribeiro
- Centro Federal de Educação Tecnológica Celso Suckow da Fonseca CEFET/RJ, Campus Nova Iguaçu, Nova Iguaçu, Rio de Janeiro 26041-271, Brazil
| | - Enrique V. Anda
- Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900, Brazil
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3
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Distribution of atomic chain lengths: Effect of local temperature profile. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139796] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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4
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Determinants of interchain coupling properties of Te atomic chains. Sci Rep 2022; 12:2973. [PMID: 35194077 PMCID: PMC8863999 DOI: 10.1038/s41598-022-06750-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Accepted: 02/01/2022] [Indexed: 11/09/2022] Open
Abstract
The coupling effect of one-dimensional (1D) materials is of great significance for the practical application of 1D materials in high-density memory devices and ultra-micro nanometer array lasers. However, the determinants of the coupling effect remain debated. Here, using first principles methods, we investigate the effects of chirality, size and stacking mode on the stability and electronic properties of few-chain Te nanowires. We find that the stacking mode and size play a dominant role in the stability of the nanowires, while the chirality and size have a key effect on the electronic structures. These phenomena are mainly due to the quantum size effect and the special helical structure of the Te chain. Our findings provide the means for adjusting the band gap and the candidates for constructing n-type spin devices, which serve as a basis for the research and manufacture of new nano electronic devices.
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5
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Han J, Zhang A, Chen M, Gao W, Jiang Q. Giant Rashba splitting in one-dimensional atomic tellurium chains. NANOSCALE 2020; 12:10277-10283. [PMID: 32363363 DOI: 10.1039/d0nr00443j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The search for a one-dimensional (1D) system with purely 1D bands and strong Rashba spin splitting is essential for the realization of Majorana fermions and spin transport but presents a fundamental challenge to date. Herein, using first-principles calculations, we demonstrated that atomic Tellurium (Te) chains exhibit purely 1D bands and giant Rashba spin splitting, and their splitting parameters depend strongly on strain and structure distortion. This phenomenon stems from the helical structure of atomic Te chains, which can not only sustain significant strain but also realize the synergy of orbital angular momentum and in-chain potential gradient in enhancing spin splitting. The structure distortion of stretched helical Te chains is critical to execute this synergy, generating a large Rashba spin splitting among the known systems. Our findings proposed a potential 1D giant Rashba splitting system for exploring spintronics and Majorana fermions, and provide routes for engineering spin splitting in other materials.
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Affiliation(s)
- Jie Han
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
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6
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Chen J, Wu K, Ma H, Hu W, Yang J. Tunable Rashba spin splitting in Janus transition-metal dichalcogenide monolayers via charge doping. RSC Adv 2020; 10:6388-6394. [PMID: 35495998 PMCID: PMC9049672 DOI: 10.1039/d0ra00674b] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2019] [Accepted: 01/23/2020] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional Janus transition-metal dichalcogenides possess an intrinsic Rashba effect, which can be manipulated by charge doping. Electron doping can effectively strengthen the Rashba effect, while hole doping would weaken it.
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Affiliation(s)
- Jiajia Chen
- Department of Chemical Physics
- Hefei National Laboratory for Physical Sciences at Microscale
- Synergetic Innovation Center of Quantum Information and Quantum Physics
- University of Science and Technology of China
- Hefei
| | - Kai Wu
- Department of Chemical Physics
- Hefei National Laboratory for Physical Sciences at Microscale
- Synergetic Innovation Center of Quantum Information and Quantum Physics
- University of Science and Technology of China
- Hefei
| | - Huanhuan Ma
- Department of Chemical Physics
- Hefei National Laboratory for Physical Sciences at Microscale
- Synergetic Innovation Center of Quantum Information and Quantum Physics
- University of Science and Technology of China
- Hefei
| | - Wei Hu
- Department of Chemical Physics
- Hefei National Laboratory for Physical Sciences at Microscale
- Synergetic Innovation Center of Quantum Information and Quantum Physics
- University of Science and Technology of China
- Hefei
| | - Jinlong Yang
- Department of Chemical Physics
- Hefei National Laboratory for Physical Sciences at Microscale
- Synergetic Innovation Center of Quantum Information and Quantum Physics
- University of Science and Technology of China
- Hefei
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7
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Qi L, Gao W, Jiang Q. Strain engineering of the electronic and transport properties of monolayer tellurenyne. Phys Chem Chem Phys 2019; 21:23119-23128. [PMID: 31608349 DOI: 10.1039/c9cp03547h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) materials exhibiting quality electronic properties such as suitable band gap, giant Rashba effect and high carrier mobility are essential for promising applications in electronics and spintronics. Strain engineering has been recognized as an effective strategy to engineer the atomic and electronic properties of 2D materials. Herein, based on density functional theory, we demonstrate that the electronic properties of tellurenyne can be tuned well by using uniaxial strain. We find that tellurenyne retains the unique noncovalent bond structure and exhibits good stability under the uniaxial strain. Meanwhile, the band gap of tellurenyne can be tuned to a large scale (0.33-1.18 eV and 0.73-1.27 eV under the uniaxial strain along and perpendicular to the chain direction, respectively). Under 10% tension strain along the chain direction, the Rashba constant reaches 2.96 eV Å, belonging to giant Rashba systems. More importantly, the hole mobility of tellurenyne along the chain direction reaches 1.1 × 105 cm2 V-1 s-1 under 10% tension strain along the chain direction, which is one order of magnitude larger than that of phosphorene. Therefore, these remarkable electronic properties of tellurenyne engineered by using strain indicate its potential applications in electronics and spintronics.
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Affiliation(s)
- Liujian Qi
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University, 130022, Changchun, China.
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8
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Zhu SY, Shao Y, Wang E, Cao L, Li XY, Liu ZL, Liu C, Liu LW, Wang JO, Ibrahim K, Sun JT, Wang YL, Du S, Gao HJ. Evidence of Topological Edge States in Buckled Antimonene Monolayers. NANO LETTERS 2019; 19:6323-6329. [PMID: 31431010 DOI: 10.1021/acs.nanolett.9b02444] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional topological materials have attracted intense research efforts owing to their promise in applications for low-energy, high-efficiency quantum computations. Group-VA elemental thin films with strong spin-orbit coupling have been predicted to host topologically nontrivial states as excellent two-dimensional topological materials. Herein, we experimentally demonstrated for the first time that the epitaxially grown high-quality antimonene monolayer islands with buckled configurations exhibit significantly robust one-dimensional topological edge states above the Fermi level. We further demonstrated that these topologically nontrivial edge states arise from a single p-orbital manifold as a general consequence of atomic spin-orbit coupling. Thus, our findings establish monolayer antimonene as a new class of topological monolayer materials hosting the topological edge states for future low-power electronic nanodevices and quantum computations.
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Affiliation(s)
- Shi-Yu Zhu
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Yan Shao
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - En Wang
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Lu Cao
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Xuan-Yi Li
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Zhong-Liu Liu
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Chen Liu
- Institute of High Energy Physics , Chinese Academy of Sciences , Beijing 100049 , China
| | - Li-Wei Liu
- School of Information and Electronics , Beijing Institute of Technology , Beijing 100081 , China
| | - Jia-Ou Wang
- Institute of High Energy Physics , Chinese Academy of Sciences , Beijing 100049 , China
| | - Kurash Ibrahim
- Institute of High Energy Physics , Chinese Academy of Sciences , Beijing 100049 , China
| | - Jia-Tao Sun
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- School of Information and Electronics , Beijing Institute of Technology , Beijing 100081 , China
| | - Ye-Liang Wang
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- School of Information and Electronics , Beijing Institute of Technology , Beijing 100081 , China
- CAS Center for Excellence in Topological Quantum Computation , Beijing 100049 , China
| | - Shixuan Du
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- CAS Center for Excellence in Topological Quantum Computation , Beijing 100049 , China
| | - Hong-Jun Gao
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- CAS Center for Excellence in Topological Quantum Computation , Beijing 100049 , China
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9
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Qi L, Han J, Gao W, Jiang Q. Monolayer tellurenyne assembled with helical telluryne: structure and transport properties. NANOSCALE 2019; 11:4053-4060. [PMID: 30775772 DOI: 10.1039/c9nr00596j] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) crystals are candidate materials for electronics and spintronics, but their deficient carrier mobility, inappreciable spin-orbit coupling effect, and environmental instability have such limited applications. Herein, using density functional theory methods, we propose a novel 2D monolayer material, named tellurenyne, built with an atomic tellurium chain (named telluryne) via a noncovalent bond. The comparable electrostatic and van der Waals contributions to interchain binding enable tellurenyne to exhibit remarkable stabilities and transport properties. The carrier mobility of tellurenyne is even higher than phosphorene, with the largest anisotropy among all known systems. Importantly, by changing the phase orders of one-dimensional telluryne, one can switch the preferred carrier type and rotate the dominant direction of carrier transport by 90°. Additionally, tellurenyne is found to exhibit Rashba spin splitting with the coupling parameter of 2.13 eV Å, belonging to the giant Rashba systems. Therefore, this novel 2D material, tellurenyne, is promising for applications in electronics and spintronics.
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Affiliation(s)
- Liujian Qi
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
| | - Jie Han
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
| | - Wang Gao
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
| | - Qing Jiang
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
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10
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Do EH, Kwon SG, Kang MH, Yeom HW. Structural and electronic effects of adatoms on metallic atomic chains in Si(111)5 × 2-Au. Sci Rep 2018; 8:15537. [PMID: 30341308 PMCID: PMC6195602 DOI: 10.1038/s41598-018-33703-5] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2018] [Accepted: 10/02/2018] [Indexed: 11/21/2022] Open
Abstract
We investigate the effects of native Si adatoms on structural and electronic properties of the Si(111)5 × 2-Au surface, a representative one-dimensional metal-chain system, by means of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. High-resolution STM images of relatively long adatom-free chain segments evidence directly the inherent ×2 reconstruction, which is the essential part of a recently proposed structural model based on a renewed Au coverage of 0.7 monolayer. On the other hand, STM images for chain segments of different lengths reveal that the structural distortion induced by Si adatoms is confined in neighboring unit cells, in good agreement with DFT calculations based on that model. Si adatoms greatly affect the metallic bands of Au chains, one of which becomes fully occupied and represents a tightly confined electronic state to the distortion around Si adatoms, potentially forming short insulating segments within metallic chains. This finding provides an atomic-scale understanding of the observed gradual metal-insulator transition and atomic-scale phase separation induced by Si adatoms.
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Affiliation(s)
- Eui Hwan Do
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea. .,Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
| | - Se Gab Kwon
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Myung Ho Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea. .,Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
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11
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Qin Z, Qin G, Shao B, Zuo X. Unconventional magnetic anisotropy in one-dimensional Rashba system realized by adsorbing Gd atom on zigzag graphene nanoribbons. NANOSCALE 2017; 9:11657-11666. [PMID: 28770919 DOI: 10.1039/c7nr03164e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The Rashba effect, a spin splitting in electronic band structures, attracts much attention for potential applications in spintronics with no requirement of an external magnetic field. Realizing a one-dimensional (1D) Rashba system is a big challenge due to the difficulties of growing high-quality heavy-metal nanowires or introducing strong spin-orbit coupling (SOC) and broken inversion symmetry in flexible materials. Here, based on first-principles calculations, we propose a pathway to realize the Rashba spin-split by adsorbing Gd atom on zigzag graphene nanoribbons (Gd-ZGNR) and further investigate the magnetic anisotropy energy (MAE). Perpendicular MAE and unconventional MAE contributions in k-space are found in the self-assembled Gd-ZGNR system, which presents a remarkable Rashba effect (the estimated strength is 1.89 eV Å) due to the strong SOC (∼65.6 meV) and the asymmetric adsorption sites at the nanoribbon edge. Moreover, first-order MAE is connected to the intrinsic Rashba effect beyond the traditional second-order MAE, which is confirmed based on the analysis of electronic structures perturbed with SOC in comparison with metastable Gd-ZGNR at the central symmetric adsorption site. The dependence on the ribbon width of the first-order MAE and the Rashba effect on Gd-ZGNRs are also examined. This work not only opens a new gate for designing the 1D Rashba system but also provides insight into the unconventional MAE due to the intrinsic Rashba effect, which would be of great significance for searching Majorana fermions and promoting potential applications in spintronics.
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Affiliation(s)
- Zhenzhen Qin
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China.
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12
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Kopciuszyński M, Krawiec M, Zdyb R, Jałochowski M. Purely one-dimensional bands with a giant spin-orbit splitting: Pb nanoribbons on Si(553) surface. Sci Rep 2017; 7:46215. [PMID: 28383078 PMCID: PMC5382770 DOI: 10.1038/srep46215] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2016] [Accepted: 03/08/2017] [Indexed: 11/10/2022] Open
Abstract
We report on a giant Rashba type splitting of metallic bands observed in one-dimensional structures prepared on a vicinal silicon substrate. A single layer of Pb on Si(553) orders this vicinal surface making perfectly regular distribution of monatomic steps. Although there is only one layer of Pb, the system reveals very strong metallic and purely one-dimensional character, which manifests itself in multiple surface state bands crossing the Fermi level in the direction parallel to the step edges and a small band gap in the perpendicular direction. As shown by spin-polarized photoemission and density functional theory calculations these surface state bands are spin-polarized and completely decoupled from the rest of the system. The experimentally observed spin splitting of 0.6 eV at room temperature is the largest found to now in the silicon-based metallic nanostructures, which makes the considered system a promising candidate for application in spintronic devices.
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Affiliation(s)
- Marek Kopciuszyński
- Institute of Physics, Maria Curie-Sklodowska University, Lublin, 20-031, Poland
| | - Mariusz Krawiec
- Institute of Physics, Maria Curie-Sklodowska University, Lublin, 20-031, Poland
| | - Ryszard Zdyb
- Institute of Physics, Maria Curie-Sklodowska University, Lublin, 20-031, Poland
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13
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Cheng C, Sun JT, Chen XR, Fu HX, Meng S. Nonlinear Rashba spin splitting in transition metal dichalcogenide monolayers. NANOSCALE 2016; 8:17854-17860. [PMID: 27714035 DOI: 10.1039/c6nr04235j] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Single-layer transition-metal dichalcogenides (TMDs) such as MoS2 and MoSe2 exhibit unique electronic band structures ideal for hosting many exotic spin-orbital orderings. It has been widely accepted that Rashba spin splitting (RSS) is linearly proportional to the external field in heterostructure interfaces or to the potential gradient in polar materials. Surprisingly, an extraordinary nonlinear dependence of RSS is found in semiconducting TMD monolayers under a gate field. In contrast to small and constant RSS in polar materials, the potential gradient in non-polar TMDs gradually increases with the gate bias, resulting in nonlinear RSS with a Rashba coefficient an order-of-magnitude larger than the linear one. Most strikingly, under a large gate field MoSe2 demonstrates the largest anisotropic spin splitting among all known semiconductors to our knowledge. Based on the k·p model via symmetry analysis, we identify that the third-order contributions are responsible for the large nonlinear Rashba splitting. The gate tunable spin splitting found in semiconducting pristine TMD monolayers promises future spintronics applications in that spin polarized electrons can be generated by external gating in an experimentally accessible way.
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Affiliation(s)
- Cai Cheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. and College of Physical Science and Technology, Sichuan University, Chengdu 610064, China.
| | - Jia-Tao Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Xiang-Rong Chen
- College of Physical Science and Technology, Sichuan University, Chengdu 610064, China.
| | - Hui-Xia Fu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.
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14
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Takayama A, Sato T, Souma S, Oguchi T, Takahashi T. One-dimensional edge states with giant spin splitting in a bismuth thin film. PHYSICAL REVIEW LETTERS 2015; 114:066402. [PMID: 25723232 DOI: 10.1103/physrevlett.114.066402] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2014] [Indexed: 06/04/2023]
Abstract
To realize a one-dimensional (1D) system with strong spin-orbit coupling is a big challenge in modern physics, since the electrons in such a system are predicted to exhibit exotic properties unexpected from the 2D or 3D counterparts, while it was difficult to realize genuine physical properties inherent to the 1D system. We demonstrate the first experimental result that directly determines the purely 1D band structure by performing spin-resolved angle-resolved photoemission spectroscopy of Bi islands on a silicon surface that contains a metallic 1D edge structure with unexpectedly large Rashba-type spin-orbit coupling suggestive of the nontopological nature. We have also found a sizable out-of-plane spin polarization of the 1D edge state, consistent with our first-principles band calculations. Our result provides a new platform to realize exotic quantum phenomena at the 1D edge of the strong spin-orbit-coupling systems.
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Affiliation(s)
- A Takayama
- WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - T Sato
- Department of Physics, Tohoku University, Sendai 980-8578, Japan
| | - S Souma
- WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - T Oguchi
- Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
| | - T Takahashi
- WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and Department of Physics, Tohoku University, Sendai 980-8578, Japan
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15
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Oncel N, Çakır D, Dil JH, Slomski B, Landolt G. Angle-resolved synchrotron photoemission and density functional theory on the iridium modified Si(1 1 1) surface. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:285501. [PMID: 24945465 DOI: 10.1088/0953-8984/26/28/285501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The physical and electronic properties of the Ir modified Si(1 1 1) surface have been investigated with the help of angle resolved photoemission spectroscopy and density functional theory. The surface consists of Ir-ring clusters that form a [Formula: see text]reconstruction. A comparison between the measured and calculated band structure of the system reveals that the dispersions of the projected bulk states and the states originating from [Formula: see text] domains are heavily modified due to Umklapp scattering from the surface Brillouin zone. Density of states calculations show that Ir-ring clusters contribute to the states in the vicinity of the Fermi level.
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Affiliation(s)
- Nuri Oncel
- Department of Physics and Astrophysics, University of North Dakota, Grand Forks
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16
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Ma Y, Dai Y, Wei W, Li X, Huang B. Emergence of electric polarity in BiTeX (X = Br and I) monolayers and the giant Rashba spin splitting. Phys Chem Chem Phys 2014; 16:17603-9. [DOI: 10.1039/c4cp01975j] [Citation(s) in RCA: 62] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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17
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Large spin splitting of metallic surface-state bands at adsorbate-modified gold/silicon surfaces. Sci Rep 2014; 3:1826. [PMID: 23661151 PMCID: PMC3650674 DOI: 10.1038/srep01826] [Citation(s) in RCA: 47] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2013] [Accepted: 04/24/2013] [Indexed: 11/08/2022] Open
Abstract
Finding appropriate systems with a large spin splitting of metallic surface-state band which can be fabricated on silicon using routine technique is an essential step in combining Rashba-effect based spintronics with silicon technology. We have found that originally poor structural and electronic properties of the Au/Si(111) √3 x √3 surface can be substantially improved by adsorbing small amounts of suitable species (e.g., Tl, In, Na, Cs). The resultant surfaces exhibit a highly-ordered atomic structure and spin-split metallic surface-state band with a momentum splitting of up to 0.052 Å(-1) and an energy splitting of up to 190 meV at the Fermi level. The family of adsorbate-modified Au/Si(111) √3 x √3 surfaces, on the one hand, is thought to be a fascinating playground for exploring spin-splitting effects in the metal monolayers on a semiconductor and, on the other hand, expands greatly the list of material systems prospective for spintronics applications.
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Gruznev DV, Bondarenko LV, Matetskiy AV, Yakovlev AA, Tupchaya AY, Eremeev SV, Chulkov EV, Chou JP, Wei CM, Lai MY, Wang YL, Zotov AV, Saranin AA. A strategy to create spin-split metallic bands on silicon using a dense alloy layer. Sci Rep 2014; 4:4742. [PMID: 24752038 PMCID: PMC3994439 DOI: 10.1038/srep04742] [Citation(s) in RCA: 59] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2014] [Accepted: 03/28/2014] [Indexed: 11/25/2022] Open
Abstract
To exploit Rashba effect in a 2D electron gas on silicon surface for spin transport, it is necessary to have surface reconstruction with spin-split metallic surface-state bands. However, metals with strong spin-orbit coupling (e.g., Bi, Tl, Sb, Pt) induce reconstructions on silicon with almost exclusively spin-split insulating bands. We propose a strategy to create spin-split metallic bands using a dense 2D alloy layer containing a metal with strong spin-orbit coupling and another metal to modify the surface reconstruction. Here we report two examples, i.e., alloying reconstruction with Na and Tl/Si(111)1 × 1 reconstruction with Pb. The strategy provides a new paradigm for creating metallic surface state bands with various spin textures on silicon and therefore enhances the possibility to integrate fascinating and promising capabilities of spintronics with current semiconductor technology.
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Affiliation(s)
- Dimitry V Gruznev
- 1] Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia [2] Far Eastern Federal University, School of Natural Sciences, 690950 Vladivostok, Russia
| | - Leonid V Bondarenko
- 1] Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia [2] Far Eastern Federal University, School of Natural Sciences, 690950 Vladivostok, Russia
| | - Andrey V Matetskiy
- 1] Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia [2] Far Eastern Federal University, School of Natural Sciences, 690950 Vladivostok, Russia
| | - Alexey A Yakovlev
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexandra Y Tupchaya
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Sergey V Eremeev
- 1] Institute of Strength Physics and Materials Science, 634021 Tomsk, Russia [2] Tomsk State University, 634050 Tomsk, Russia
| | - Evgeniy V Chulkov
- 1] Tomsk State University, 634050 Tomsk, Russia [2] Donostia International Physics Center (DIPC), 20018 San Sebastían/Donostia, Basque Country, Spain [3] Departamento de Física de Materiales UPV/EHU, CFM-MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastían/Donostia, Basque Country, Spain
| | - Jyh-Pin Chou
- Institute of Atomic and Molecular Sciences, Academia SinicaP.O. Box 23-166 Taipei, Taiwan
| | - Ching-Ming Wei
- Institute of Atomic and Molecular Sciences, Academia SinicaP.O. Box 23-166 Taipei, Taiwan
| | - Ming-Yu Lai
- Institute of Atomic and Molecular Sciences, Academia SinicaP.O. Box 23-166 Taipei, Taiwan
| | - Yuh-Lin Wang
- Institute of Atomic and Molecular Sciences, Academia SinicaP.O. Box 23-166 Taipei, Taiwan
| | - Andrey V Zotov
- 1] Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia [2] Far Eastern Federal University, School of Natural Sciences, 690950 Vladivostok, Russia [3] Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia
| | - Alexander A Saranin
- 1] Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia [2] Far Eastern Federal University, School of Natural Sciences, 690950 Vladivostok, Russia
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Bondarenko LV, Matetskiy AV, Yakovlev AA, Tupchaya AY, Gruznev DV, Ryzhkova MV, Tsukanov DA, Borisenko EA, Chukurov EN, Denisov NV, Vilkov O, Vyalikh DV, Zotov AV, Saranin AA. Effect of Na adsorption on the structural and electronic properties of Si(111)√3 × √3-Au surface. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:055009. [PMID: 24443582 DOI: 10.1088/0953-8984/26/5/055009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Adsorption of ∼0.1 ML of Na onto the Si(111)√3 × √3-Au surface held at 300 °C has been found to induce pronounced changes in its structural and electronic properties. Domain wall networks, characteristic of the pristine surface, are removed completely, leading to the formation of a highly ordered homogeneous surface. The original atomic arrangement of the Si(111)√3 × √3-Au is preserved and Na atoms occupy T4 adsorption sites at the centers of surface Si trimers. Upon Na adsorption, a pronounced metallic S1 surface-state band develops. It is characterized by a large spin splitting (momentum splitting at the Fermi level Δk∥ = 0.027 Å(-1) and consequent energy splitting ΔEF = 110 meV), large electron filling (on the order of 0.5 electrons per √3 × √3 unit cell) and small effective electron mass of (0.028 ± 0.006)me. The natural consequence of the latter properties is a high surface conductivity of the Si(111)√3 × √3-(Au, Na) surface.
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Affiliation(s)
- L V Bondarenko
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia. School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok, Russia
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