Reverse epitaxy of Ge: ordered and faceted surface patterns

Nanopatterning Induced Si Doping in Amorphous Ga2O3 for Enhanced Electrical Properties and Ultra-Fast Photodetection

Ga2O3 has emerged as a promising material for the wide-bandgap industry aiming at devices beyond the limits of conventional silicon. Amorphous Ga2O3 is widely being used for flexible electronics, but suffers from very high resistivity. Conventional methods of doping like ion implantation require high temperatures post-processing, thereby limiting their use. Herein, an unconventional method of doping Ga2O3 films with Si, thereby enhancing its electrical properties, is reported. Ion-beam sputtering (500 eV Ar+) is utilized to nanopattern SiO2-coated Si substrate leaving the topmost part rich in elemental Si. This helps in enhancing the carrier conduction by increasing n-type doping of the subsequently coated 5 nm amorphous Ga2O3 films, corroborated by room-temperature resistivity measurement and valence band spectra, respectively, while the nanopatterns formed help in better light management. Finally, as proof of concept, metal-semiconductor-metal (MSM) photoconductor devices fabricated on doped, rippled films show superior properties with responsivity increasing from 6 to 433 mA W-1 while having fast detection speeds of 861 µs/710 µs (rise/fall time) as opposed to non-rippled devices (377 ms/392 ms). The results demonstrate a facile, cost-effective, and large-area method to dope amorphous Ga2O3 films in a bottom-up approach which may be employed for increasing the electrical conductivity of other amorphous oxide semiconductors as well.

Layer-by-Layer Pyramid Formation from Low-Energy Ar+ Bombardment and Annealing of Ge (110)

Isolated pyramids, 30–80 nm wide and 3–20 nm tall, form during sputter-annealing cycles on the Ge (110) surface. Pyramids have four walls with {19 13 1} faceting and a steep mound at the apex. We used scanning tunneling microscopy (STM) under ultrahigh vacuum conditions to periodically image the surface at ion energies between 100 eV and 500 eV and incremental total flux. Pyramids are seen using Ar⁺ between 200 eV and 400 eV, and require Ag to be present on the sample or sample holder. We suspect that the pyramids are initiated by Ag co-sputtered onto the surface. Growth of pyramids is due to the gathering of step edges with (16 × 2) reconstruction around the pyramid base during layer-by-layer removal of the substrate, and conversion to {19 13 1} faceting. The absence of pyramids using Ar⁺ energies above 400 eV is likely due to surface damage that is insufficiently annealed.

Ion Beam Nanopatterning of Biomaterial Surfaces

Ion beam irradiation of solid surfaces may result in the self-organized formation of well-defined topographic nanopatterns. Depending on the irradiation conditions and the material properties, isotropic or anisotropic patterns of differently shaped features may be obtained. Most intriguingly, the periodicities of these patterns can be adjusted in the range between less than twenty and several hundred nanometers, which covers the dimensions of many cellular and extracellular features. However, even though ion beam nanopatterning has been studied for several decades and is nowadays widely employed in the fabrication of functional surfaces, it has found its way into the biomaterials field only recently. This review provides a brief overview of the basics of ion beam nanopatterning, emphasizes aspects of particular relevance for biomaterials applications, and summarizes a number of recent studies that investigated the effects of such nanopatterned surfaces on the adsorption of biomolecules and the response of adhering cells. Finally, promising future directions and potential translational challenges are identified.

Tailoring of uniaxial magnetic anisotropy in Permalloy thin films using nanorippled Si substrates

In this work the investigation of in-plane uniaxial magnetic anisotropy induced by the morphology due to ion beam erosion of Si(1 0 0) has been done. Ion beam erosion at an oblique angle of incidence generates a well-ordered nanoripple structure on the Si surface and ripple propagates in a direction normal to ion beam erosion. Permalloy thin films grown on such periodic nanopatterns show a strong uniaxial magnetic anisotropy with easy axis of magnetization in a direction normal to the ripple wave vector. The strength of uniaxial magnetic anisotropy is found to be high for the low value of ripple wavelength; it is decreasing with increasing value of ripple wavelength. Similarly, the strength of uniaxial magnetic anisotropy decreases with increasing Permalloy film thickness. Grazing incidence small angle x-ray scattering data reveals an anisotropic growth of Permalloy thin films with preferential orientation of grains in the direction normal to the ripple wave vector. Permalloy thin film growth is highly conformal with the film surface replicating the substrate ripple morphology up to a film thickness of 50 nm has been observed. Correlation between observed uniaxial magnetic anisotropy to surface modification has been addressed.

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Controlled doping with an effective carrier concentration higher than 10²⁰ cm⁻³ is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm⁻² and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.

Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy

Gratings, one of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems. The grating period is the key parameter that limits the dispersion and resolution of the system. With the rapid development of large X-ray science facilities, gratings with periodicities below 50 nm are in urgent need for the development of ultrahigh-resolution X-ray spectroscopy. However, the wafer-scale fabrication of nanogratings through conventional patterning methods is difficult. Herein, we report a maskless and high-throughput method to generate wafer-scale, multilayer gratings with period in the sub-50 nm range. They are fabricated by a vacancy epitaxy process and coated with X-ray multilayers, which demonstrate extremely large angular dispersion at approximately 90 eV and 270 eV. The developed new method has great potential to produce ultrahigh line density multilayer gratings that can pave the way to cutting edge high-resolution spectroscopy and other X-ray applications.

Fabrication of wafer-scale nanogratings for X-ray spectroscopy is difficult especially for very high line densities. The authors use vacancy epitaxy to fabricate sub-50-nm-periodicity gratings, coated with multilayers for efficient operation, for use in ultra-high resolution x-ray spectroscopy.

A novel green approach for reduction of free standing graphene oxide: electrical and electronic structural investigations

Ion beam irradiation technique has been proposed, for efficient, fast and eco-friendly reduction of graphene oxide (GO), as an alternative to the conventional methods. 5 MeV, Au⁺ ion beam has been used to reduce the free standing GO flake. Both electronic and nuclear energy loss mechanisms of the irradiation process play a major role in removal of oxygen moieties and recovery of graphene network. Atomic resolution scanning tunnelling microscopy analysis of the irradiated GO flake shows the characteristic honeycomb structure of graphene. X-ray absorption near edge structure analysis at C K-edge reveals that the features of the irradiated GO flake resemble the few layer graphene. Resonant Rutherford backscattering spectrometry analysis evidenced an enhanced C/O ratio of ∼23 in the irradiated GO. In situ sheet resistance measurements exhibit a sharp decrease of resistance (few 100 s of Ω) at a fluence of 6.5 × 10¹⁴ ions cm^-2. Photoluminescence spectroscopic analysis of irradiated GO shows a sharp blue emission, while pristine GO exhibits a broad emission in the visible-near IR region. Region selective reduction, tunable electrical and optical properties by controlling C/O ratio makes ion irradiation as a versatile tool for the green reduction of GO for diverse applications.

Anisotropic Nanoscale Wrinkling in Solid-State Substrates

Pattern formation induced by wrinkling is a very common phenomenon exhibited in soft-matter substrates. In all these systems, wrinkles develop in the presence of compressively stressed thin films lying on compliant substrates. Here, the controlled growth of self-organized nanopatterns exploiting a wrinkling instability on a solid-state substrate is demonstrated. Soda-lime glasses are modified in the surface layers by a defocused ion beam, which triggers the formation of a compressively stressed surface layer deprived of alkali ions. When the substrate is heated up near its glass transition temperature, the wrinkling instability boosts the growth rate of the pattern by about two orders of magnitude. High-aspect-ratio anisotropic ripples bound by faceted ridges are thus formed, which represent an optimal template for guiding the growth of large-area arrays of functional nanostructures. The engineering over large square centimeter areas of quasi-1D arrays of Au nanostripe dimers endowed with tunable plasmonic response, strong optical dichroism, and high electrical conductivity is demonstrated. These peculiar functionalities allow these large-area substrates to be exploited as active metamaterials in nanophotonics, biosensing, and optoelectronics.

Large-scale self-organized gold nanostructures with bidirectional plasmon resonances for SERS

Efficient substrates for surface-enhanced Raman spectroscopy (SERS) are under constant development, since time-consuming and costly fabrication routines are often an issue for high-throughput spectroscopy applications. In this research, we use a two-step fabrication method to produce self-organized parallel-oriented plasmonic gold nanostructures. The fabrication routine is ready for wafer-scale production involving only low-energy ion beam irradiation and metal deposition. The optical spectroscopy features of the resulting structures show a successful bidirectional plasmonic response. The localized surface plasmon resonances (LSPRs) of each direction are independent from each other and can be tuned by the fabrication parameters. This ability to tune the LSPR characteristics allows the development of optimized plasmonic nanostructures to match different laser excitations and optical transitions for any arbitrary analyte. Moreover, in this study, we probe the polarization and wavelength dependence of such bidirectional plasmonic nanostructures by a complementary spectroscopic ellipsometry and Raman spectroscopy analysis. We observe a significant signal amplification by the SERS substrates and determine enhancement factors of over a thousand times. We also perform finite element method-based calculations of the electromagnetic enhancement for the SERS signal provided by the plasmonic nanostructures. The calculations are based on realistic models constructed using the same particle sizes and shapes experimentally determined by scanning electron microscopy. The spatial distribution of electric field enhancement shows some dispersion in the LSPR, which is a direct consequence of the semi-random distribution of hotspots. The signal enhancement is highly efficient, making our SERS substrates attractive candidates for high-throughput chemical sensing applications in which directionality, chemical stability, and large-scale fabrication are essential requirements.

Here we present a two-step fabrication of large-scale self-organized gold nanostructures for multicolor surface-enhanced Raman spectroscopy (SERS). We studied the morphology and plasmonic responses of our substrates and performed optical simulations.

Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

In this review, we report on fabrication paths, challenges, and emerging solutions to integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing standard Si technology. Their potential as laser gain material for the use of optical intra- and inter-chip interconnects as well as possibilities to combine a single-photon-source-based quantum cryptographic means with Si technology will be discussed. We propose that the mandatory addressability of the light emitters can be achieved by a combination of organized QD growth assisted by templated self-assembly, and advanced inter-QD defect engineering to boost the optical emissivity of group-IV QDs at room-temperature. Those two main parts, the site-controlled growth and the light emission enhancement in QDs through the introduction of single defects build the main body of the review. This leads us to a roadmap for the necessary further development of this emerging field of CMOS-compatible group-IV QD light emitters for on-chip applications.

Highly ordered square arrays of nanoscale pyramids produced by ion bombardment of a crystalline binary material

A theory is developed for the nanoscale patterns formed when the (001) surface of a crystalline binary material with fourfold rotational symmetry is subjected to normal-incidence ion bombardment. The deterministic nonlinear continuum equations account for the Ehrlich-Schwoebel barrier, which produces uphill atomic currents on the crystal surface. We demonstrate that highly ordered square arrays of nanopyramids can form in a certain region of parameter space. An Ehrlich-Schwoebel barrier is required for patterns of this kind to develop. For another range of parameters, a disordered square array of nanodots forms and the pattern coarsens over time.

Faceted nanostructure arrays with extreme regularity by self-assembly of vacancies

Semiconductor quantum dots and wires are important building blocks for future electronic and optoelectronic devices. The common way of producing semiconductor nanostructures is by molecular beam epitaxy (MBE). In this additive growth process atoms are deposited onto crystalline surfaces and self-assemble into 3D structures. Here we present a subtractive process, in which surface vacancies are created by ion impacts. On terraces of crystalline surfaces their nucleation forms depressions which coarsen and finally lead to a self-organized 3D morphology. It is shown that this kind of spontaneous pattern formation is inherent to the ion induced erosion process on crystalline surfaces and is analogous to 3D growth by MBE. However, novel facets are found due to slightly different energetics and kinetics of ad-atoms and surface vacancies, especially at Ehrlich-Schwoebel step-edge barriers. Depending on the crystal orientation, three-fold, four-fold, six-fold symmetry, as well as extremely regular periodic nanogrooves can be produced on different orientations of group IV (Si, Ge) and III-V (GaAs, InAs) semiconductors.

Silicide induced ion beam patterning of Si(001)

Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.