Chemical functionalization of silicene: spontaneous structural transition and exotic electronic properties

Lithiation and Sodiation of Hydrogenated Silicene: A Density Functional Theory Investigation

The next-generation renewable energy machineries necessitate the electrodes with appropriate electrochemical performance. Here, the anodic properties of silicane for Li- and Na-ion batteries were scrutinized employing first-principle calculations. The projected single-layer hydrogen-functionalized Si (Si₂ H₂ ) structure was energetically, mechanically, dynamically, and thermally stable based on theoretical simulations, confirming its experimental feasibility. The electronic properties revealed the semiconducting nature of silicane on the basis of PBE and HSE06 schemes with an indirect bandgap. As anode material for Li- and Na-ion batteries, hydrogenated silicene showed promising electrochemical performance because of the proper adsorption strength between Si₂ H₂ and the adsorbed Li and Na. The average open circuit voltages for Li_2x Si₂ H₂ and Na_2x Si₂ H₂ were as low as 0.42 and 0. 64 V, while its specific capacity was as high as 921 and 1842 mAh g^-1 for Li and Na, respectively. It also showed ultra-fast diffusion channels for Li and Na ions. The diffusion barriers for Li and Na migrations were as low as 0.18 and 0.14 eV, respectively, which revealed rapid charge/discharge processes using hydrogenated silicene as anode. These important features facilitate silicane as favorable anode material for Li/Na-ion batteries.

Silicene, silicene derivatives, and their device applications

Silicene, the ultimate scaling of a silicon atomic sheet in a buckled honeycomb lattice, represents a monoelemental class of two-dimensional (2D) materials similar to graphene but with unique potential for a host of exotic electronic properties. Nonetheless, there is a lack of experimental studies largely due to the interplay between material degradation and process portability issues. This review highlights the state-of-the-art experimental progress and future opportunities in the synthesis, characterization, stabilization, processing and experimental device examples of monolayer silicene and its derivatives. The electrostatic characteristics of the Ag-removal silicene field-effect transistor exhibit ambipolar charge transport, corroborating with theoretical predictions on Dirac fermions and Dirac cone in the band structure. The electronic structure of silicene is expected to be sensitive to substrate interaction, surface chemistry, and spin-orbit coupling, holding great promise for a variety of novel applications, such as topological bits, quantum sensing, and energy devices. Moreover, the unique allotropic affinity of silicene with single-crystalline bulk silicon suggests a more direct path for the integration with or revolution to ubiquitous semiconductor technology. Both the materials and process aspects of silicene research also provide transferable knowledge to other Xenes like stanene, germanene, phosphorene, and so forth.

Functionalization of group-14 two-dimensional materials

The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp² and sp³ orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.

Chemical modification of group IV graphene analogs

Mono-elemental two-dimensional (2D) crystals (graphene, silicene, germanene, stanene, and so on), termed 2D-Xenes, have been brought to the forefront of scientific research. The stability and electronic properties of 2D-Xenes are main challenges in developing practical devices. Therefore, in this review, we focus on 2D free-standing group-IV graphene analogs (graphene quantum dots, silicane, and germanane) and the functionalization of these sheets with organic moieties, which could be handled under ambient conditions. We highlight the present results and future opportunities, functions and applications, and novel device concepts.

Two-dimensional silicon crystals with sizable band gaps and ultrahigh carrier mobility

Due to their compatibility in the well-developed Si-based semiconductor industry, exploring two-dimensional (2D) silicon crystals with both sizable band gaps and high carrier mobility is important to develop high-performance electronic and optoelectronic devices on the nanoscale. Here, eleven new 2D silicon crystals are reported based on the strategy of mixing 3-fold and 4-fold coordinated silicon atoms in 2D confined phases and first-principles calculations. We establish that these 2D silicon crystals can be obtained by functionalizing silicene with silicon atoms, dimers, or chains, which exhibit lower formation energy than that of silicene. Their dynamic stability and thermal stability are confirmed by phonon calculations and Born-Oppenheimer molecular dynamic simulation at temperatures up to 700 K. Electronic structure calculations reveal that these 2D silicon crystals are semiconductors with sizable and tunable band gaps, ranging from 1.12 to 1.67 eV, and four of them are direct or quasi-direct band gap semiconductors with strong absorption in the visible-light frequency. The calculated Young's stiffness of 2D silicon crystals ranges from 31 to 88 N m^-1, which are comparable to phosphorene, but remarkably smaller than those of MoS₂ monolayer and graphene. Remarkably, C_z-P2/c-Si₁₂ possesses a negative Poisson's ratio with a maximum value of -0.055. In particular, 2D silicon crystals possess ultrahigh carrier mobility of up to 1.7 × 10⁵ and 1.3 × 10⁴ cm² V^-1 s^-1 at room temperature for electrons and holes, respectively, suitable for high-speed electronic and optoelectronic applications on the nanoscale.

Rehybridization-induced charge density oscillations in the long-range corrugated silicene

One-dimensional long-range periodic structural deformation leads to a novel state of matter, called the rehybridization-induced sublattice-polarized charge density oscillation phase.

A theoretical review on electronic, magnetic and optical properties of silicene

Inspired by the success of graphene, various two dimensional (2D) structures in free standing (FS) (hypothetical) form and on different substrates have been proposed recently. Silicene, a silicon counterpart of graphene, is predicted to possess massless Dirac fermions and to exhibit an experimentally accessible quantum spin Hall effect. Since the effective spin-orbit interaction is quite significant compared to graphene, buckling in silicene opens a gap of 1.55 meV at the Dirac point. This band gap can be further tailored by applying in plane stress, an external electric field, chemical functionalization and defects. In this topical theoretical review, we would like to explore the electronic, magnetic and optical properties, including Raman spectroscopy of various important derivatives of monolayer and bilayer silicene (BLS) with different adatoms (doping). The magnetic properties can be tailored by chemical functionalization, such as hydrogenation and introducing vacancy into the pristine planar silicene. Apart from some universal features of optical absorption present in all these 2D materials, the study on reflectivity modulation with doping (Al and P) concentration in silicene has indicated the emergence of some strong peaks having the robust characteristic of a doped reflective surface for both polarizations of the electromagnetic (EM) field. Besides this, attempts will be made to understand the electronic properties of silicene from some simple tight-binding Hamiltonian. We also point out the importance of shape dependence and optical anisotropy properties in silicene nanodisks and establish that a zigzag trigonal possesses the maximum magnetic moment. We also suggest future directions to be explored to make the synthesis of silicene and its various derivatives viable for verification of theoretical predictions. Although this is a fairly new route, the results obtained so far from experimental and theoretical studies in understanding silicene have shown enough significant promising features to open a new direction in the silicon industry, silicon based nano-structures in spintronics and in opto-electronic devices.

Hydrogen on silicene: like or unlike graphene?

Hydrogenation of free-standing silicene, the two-dimensional allotrope of silicon, is investigated in detail using first-principles methods and compared with the adsorption of H atoms on graphene. Similarly to graphene, chemisorption of a single H atom on silicene induces the formation of a semilocalized state around the adatom, a sharp peak in the density of states at the Fermi level which acts as a strong resonant scatterer for charge carriers. This state hosts an unpaired electron, the itinerant electron of the resonating valence bond picture which primarily resides on the "majority" sublattice and biases the reactivity towards specific lattice positions. Contrary to graphene, sticking of hydrogen atoms is barrierless, on both the pristine and the hydrogenated surface. As a consequence, hydrogen adsorption on silicene is expected to proceed randomly under typical laboratory conditions, and preferential binding to form balanced dimers (or clusters) only occurs when thermodynamic equilibrium conditions prevail. The absence of clustering can be experimentally confirmed using scanning tunneling microscopy techniques since simulated imaging shows that the investigated structures provide distinguishable features that should allow their easy identification, if present on the surface. Overall, our findings can be rationalized by the fact that in silicene π bonds are weaker and the lattice is softer than in graphene and suggest that in silicene adatoms may severely limit carrier mobility.

Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor

Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene into the direct one. Attributed to the enthalpy decreasing linear to the oxygen ratio, partial oxidized arsenene can be controllably produced by the progressive oxidation under low temperature. Importantly, by increasing the oxygen content from 1O/18As to 18O/18As, the oxidation can narrow the direct bandgap of oxidized arsenene from 1.29 to 0.02 eV. The bandgap of partial oxidized arsenene is proportional to the oxygen content. Consequently, the partial oxidized arsenene with tunable direct bandgap has great potentials in the high efficient infra light emitter and photo-voltaic devices.

A theoretical study of gas adsorption on silicene nanoribbons and its application in a highly sensitive molecule sensor

Silicene nanoribbon is a promising material to detect individual gas molecules with high sensitivity.

Silicene and graphene nano materials in gas sensing mechanism

Silicene, the Si analogue of graphene, has recently extended the short list of existing two-dimensional (2D) atomic crystals.

Predicting Two-Dimensional Silicon Carbide Monolayers

Intrinsic semimetallicity of graphene and silicene largely limits their applications in functional devices. Mixing carbon and silicon atoms to form two-dimensional (2D) silicon carbide (SixC1-x) sheets is promising to overcome this issue. Using first-principles calculations combined with the cluster expansion method, we perform a comprehensive study on the thermodynamic stability and electronic properties of 2D SixC1-x monolayers with 0 ≤ x ≤ 1. Upon varying the silicon concentration, the 2D SixC1-x presents two distinct structural phases, a homogeneous phase with well dispersed Si (or C) atoms and an in-plane hybrid phase rich in SiC domains. While the in-plane hybrid structure shows uniform semiconducting properties with widely tunable band gap from 0 to 2.87 eV due to quantum confinement effect imposed by the SiC domains, the homogeneous structures can be semiconducting or remain semimetallic depending on a superlattice vector which dictates whether the sublattice symmetry is topologically broken. Moreover, we reveal a universal rule for describing the electronic properties of the homogeneous SixC1-x structures. These findings suggest that the 2D SixC1-x monolayers may present a new "family" of 2D materials, with a rich variety of properties for applications in electronics and optoelectronics.

Covalent nitrophenyl diazonium functionalized silicene for spintronics: a first-principles study

We predict some novel electronic and magnetic properties of a functionalized silicene sheet by nitrophenyl diazonium (NPD) using first-principles calculations in the framework of density functional theory with dispersion corrections. Our calculations at the HSE06 level show that for the three coverage ratios of NPD considered in this work (i.e., NPD : Si = 1 : 8, 1 : 18 and 1 : 32), spin-polarized electronic structures can be always realized with NPD adsorption although the bandgap decreases upon reducing the NPD coverage ratio. The quasi-localized pz electrons of Si are identified to be responsible for the ferrimagnetism in these two-dimensional systems. Remarkably, the system with the NPD : Si = 1 : 8 ratio is predicted to be a bipolar magnetic semiconductor. As such, half-metallicity can be realized by applying a gate voltage with reversible spin polarization, making NPD-1/8 a potential candidate for future spintronic applications. This work offers a new tailor-made functionalization approach to realize magnetic semiconducting silicene.

Band engineering for novel two-dimensional atomic layers

The discovery of graphene has sparked much interest in science and lead to the development of an ample variety of novel two-dimensional (2D) materials. With increasing research interest in the field of 2D materials in recent years, the researchers have shifted their focus from the synthesis to the modification of 2D materials, emphasizing their electronic structures. In this review, the possibilities of altering the band structures are discussed via three different approches: (1) alloying 2D materials, so called ternary 2D materials, such as hexagonal carbonized boron nitrides (h-BCN) and transition metal dichalcogenides (TMDs) ternary materials; (2) stacking 2D materials vertically, which results in 2D heterostructures named van der Waals (vdW) solids (using hexagonal boron nitrides (h-BN)/graphene and TMDs stacking as examples), and growing lateral TMDs heterostructrues; (3) controlling the thickness of 2D materials, that is, the number of layers. The electronic properties of some 2D materials are very sensitive to the thickness, such as in TMDs and black phosphorus (BP). The variations of band structures and the resulting physical properties are systematically discussed.

Density functional theory study on organically surface-modified silicene

The geometrical structures, band structures and optical absorption of organically surface-modified silicene have been investigated by density functional theory.

Adsorption of choline benzoate ionic liquid on graphene, silicene, germanene and boron-nitride nanosheets: a DFT perspective

This work assesses the adsorption of choline benzoate ionic liquid on the surface of different nanosheets through DFT simulations.

Comparison of the stability of free-standing silicene and hydrogenated silicene in oxygen: a first principles investigation

The stability of free-standing silicene in oxygen is worthwhile discussing. In this letter, the oxygen adsorption and dissociation on free-standing silicene is studied using first principles. It is found that free-standing silicene is not stable in oxygen because O2 molecules can be easily adsorbed and dissociated into O atoms on a silicene surface without overcoming any energy barrier. Moreover, dissociated oxygen atoms are difficult to migrate on and desorb from silicene surfaces, leading to the formation of Si-O compounds. To enhance the stability of free-standing silicene in oxygen, fully hydrogenated silicene is used as a stabiliser. Interestingly, compared with no energy barrier on pristine silicene, there are two minor energy barriers of O2 molecule adsorption and dissociation on fully hydrogenated silicene, indicating that hydrogenated silicene has higher stability than free-standing silicene in oxygen. However, once the O2 molecule dissociates into two O atoms on hydrogenated silicene, desorption of O atoms will be very difficult due to its high energy barrier. This work will be helpful to understand the detail of O2 molecule dissociation and dissociation-induced O atoms adsorption on free-standing and hydrogenated silicene in oxygen and will be useful to the application of silicene.

A first-principles study of gas adsorption on germanene

The adsorption of common gas molecules (N₂, CO, CO₂, H₂O, NH₃, NO, NO₂, and O₂) on germanene is studied with density functional theory.