One-dimensional quantum wire formed at the boundary between two insulating LaAlO3/SrTiO3 interfaces

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next-generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic-sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.

Quantized critical supercurrent in SrTiO3-based quantum point contacts

Superconductivity in SrTiO3 occurs at remarkably low carrier densities and therefore, unlike conventional superconductors, can be controlled by electrostatic gates. Here, we demonstrate nanoscale weak links connecting superconducting leads, all within a single material, SrTiO3. Ionic liquid gating accumulates carriers in the leads, and local electrostatic gates are tuned to open the weak link. These devices behave as superconducting quantum point contacts with a quantized critical supercurrent. This is a milestone toward establishing SrTiO3 as a single-material platform for mesoscopic superconducting transport experiments that also intrinsically contains the necessary ingredients to engineer topological superconductivity.

Non-universal current flow near the metal-insulator transition in an oxide interface

In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO₃/SrTiO₃ interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming.

Macroscopic properties usually follow algebraic scaling laws near phase transitions. Here, the authors investigate the scaling properties of the metal‐insulator transition at the LaAlO3/SrTiO3 interface, finding that coupling between structural and electronic properties prevents the universal behavior.

Ferroelectric Exchange Bias Affects Interfacial Electronic States

In polar oxide interfaces phenomena such as superconductivity, magnetism, 1D conductivity, and quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and sheds light on the mutual effects between the polar oxide and the ferroelectric oxide. Here, the interface between the polar oxide LaAlO₃ and the ferroelectric Ca-doped SrTiO₃ is studied by means of electrical transport combined with local imaging of the current flow with the use of scanning a superconducting quantum interference device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO₃ layer. Such intrinsic bias combined with ferroelectricity can constrain the possible structural domain tiling near the interface. The use of this intrinsic bias is recommended as a method of controlling and tuning the initial state of ferroelectric materials by the design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.

Quantized Ballistic Transport of Electrons and Electron Pairs in LaAlO3/SrTiO3 Nanowires

SrTiO₃-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric, and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we show that the 2D LaAlO₃/SrTiO₃ interface can support quantized ballistic transport of electrons and (nonsuperconducting) electron pairs within quasi-1D structures that are created using a well-established conductive atomic-force microscope (c-AFM) lithography technique. The nature of transport ranges from truly single-mode (1D) to three-dimensional (3D), depending on the applied magnetic field and gate voltage. Quantization of the lowest e²/ h plateau indicate a ballistic mean-free path l_MF ∼ 20 μm, more than 2 orders of magnitude larger than for 2D LaAlO₃/SrTiO₃ heterostructures. Nonsuperconducting electron pairs are found to be stable in magnetic fields as high as B = 11 T and propagate ballistically with conductance quantized at 2 e²/ h. Theories of one-dimensional (1D) transport of interacting electron systems depend crucially on the sign of the electron-electron interaction, which may help explain the highly ballistic transport behavior. The 1D geometry yields new insights into the electronic structure of the LaAlO₃/SrTiO₃ system and offers a new platform for the study of strongly interacting 1D electronic systems.

Graphene-Complex-Oxide Nanoscale Device Concepts

The integration of graphene with complex-oxide heterostructures such as LaAlO₃/SrTiO₃ offers the opportunity to combine the multifunctional properties of an oxide interface with the exceptional electronic properties of graphene. The ability to control interface conduction through graphene and understanding how it affects the intrinsic properties of an oxide interface are critical to the technological development of multifunctional devices. Here we demonstrate several device archetypes in which electron transport at an oxide interface is modulated using a patterned graphene top-gate. Nanoscale devices are fabricated at the oxide interface by conductive atomic force microscope (c-AFM) lithography, and transport measurements are performed as a function of the graphene gate voltage. Experiments are performed with devices written adjacent to or directly underneath the graphene gate. Distinct capabilities of this approach include the ability to create highly flexible device configurations, the ability to modulate carrier density at the oxide interface, and the ability to control electron transport up to the single-electron tunneling regime, while maintaining intrinsic transport properties of the oxide interface. Our results facilitate the design of a variety of nanoscale devices that combine excellent transport properties of these two proximal two-dimensional electron systems.

One-Dimensional Nature of Superconductivity at the LaAlO_{3}/SrTiO_{3} Interface

We examine superconductivity in LaAlO_{3}/SrTiO_{3} channels with widths that transition from the 1D to the 2D regime. The superconducting critical current is independent of the channel width and increases approximately linearly with the number of parallel channels. Signatures of electron pairing outside of the superconducting regime are also found to be independent of the channel width. Collectively, these results indicate that superconductivity exists at the boundary of these channels and is absent within the interior region of the channels. The intrinsic 1D nature of superconductivity at the LaAlO_{3}/SrTiO_{3} interface imposes strong physical constraints on possible electron pairing mechanisms.

Physics of SrTiO3-based heterostructures and nanostructures: a review

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Micrometer-Scale Ballistic Transport of Electron Pairs in LaAlO_{3}/SrTiO_{3} Nanowires

High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO_{3}/SrTiO_{3}-based quantum dots reveal the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becoming superconducting. Here, we report evidence for the micrometer-scale ballistic transport of electron pairs in quasi-1D LaAlO_{3}/SrTiO_{3} nanowire cavities. In the paired phase, Fabry-Perot-like quantum interference is observed, in sync with conductance oscillations observed in the superconducting regime (at a zero magnetic field). Above a critical magnetic field B_{p}, the electron pairs unbind and the conductance oscillations shift with the magnetic field. These experimental observations extend the regime of ballistic electronic transport to strongly correlated phases.

Artificial atoms based on correlated materials

Low-dimensional electron systems fabricated from quantum matter have in recent years become available and are being explored with great intensity. This article gives an overview of the fundamental properties of such systems and summarizes the state of the field. We furthermore present and consider the concept of artificial atoms fabricated from quantum materials, anticipating remarkable scientific advances and possibly important applications of this new field of research. The surprising properties of these artificial atoms and of molecules or even of solids assembled from them are presented and discussed.

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

The emergence of two-dimensional metallic states at the LaAlO₃/SrTiO₃ (LAO/STO) heterostructure interface is known to occur at a critical thickness of four LAO layers. This insulator to-metal transition can be explained through the “polar catastrophe” mechanism arising from the divergence of the electrostatic potential at the LAO surface. Here, we demonstrate that nanostructuring can be effective in reducing or eliminating this critical thickness. Employing a modified “polar catastrophe” model, we demonstrate that the nanowire heterostructure electrostatic potential diverges more rapidly as a function of layer thickness than in a regular heterostructure. Our first-principles calculations indicate that for nanowire heterostructures a robust one-dimensional electron gas (1DEG) can be induced, consistent with recent experimental observations of 1D conductivity at LAO/STO steps. Similar to LAO/STO 2DEGs, we predict that the 1D charge density decays laterally within a few unit cells away from the nanowire; thus providing a mechanism for tuning the carrier dimensionality between 1D and 2D conductivity. Our work provides insight into the creation and manipulation of charge density at an oxide heterostructure interface and therefore may be beneficial for future nanoelectronic devices and for the engineering of novel quantum phases.

Electronic defect states at the LaAlO3/SrTiO3 heterointerface revealed by O K-edge X-ray absorption spectroscopy

Interfaces of two dissimilar complex oxides exhibit exotic physical properties that are absent in their parent compounds.

Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling

We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.

Anomalous magnetic ground state in an LaAlO3/SrTiO3 interface probed by transport through nanowires

Resistance as a function of temperature down to 20 mK and magnetic fields up to 18 T for various carrier concentrations is measured for nanowires made from the SrTiO3/LaAlO3 interface using a hard mask shadow deposition technique. The narrow width of the wires (of the order of 50 nm) allows us to separate out the magnetic effects from the dominant superconducting ones at low magnetic fields. At this regime hysteresis loops are observed along with the superconducting transition. From our data analysis, we find that the magnetic order probed by the giant magnetoresistance effect vanishes at TCurie=954±20  mK. This order is not a simple ferromagnetic state but consists of domains with opposite magnetization having a preferred in-plane orientation.