Dephasing effect on backscattering of helical surface states in 3D topological insulators

Electron- versus Spin-Phonon Coupling Governs the Temperature-Dependent Carrier Dynamics in the Topological Insulator Bi2Te3

Ultrafast charge and spin dynamics have immense effects on the applications of topological insulators (TIs). By performing spin-adiabatic nonadiabatic molecular dynamics simulations in the presence of electron-phonon (e-ph) and spin-phonon couplings, we investigate temperature-dependent intra- and interband charge and spin relaxation dynamics via the bulk and surface paths in the three-dimensional TI Bi2Te3. The e-ph coupling dominates charge relaxation in the bulk path, and the relaxation rate is positively correlated with temperature due to the large energy gaps and weak spin polarization. Conversely, the relaxation dynamics exhibits an opposite temperature dependence in the surface path because of electron re-excitation and spin mismatching induced by spin-phonon coupling, which arises from small energy gaps and strong spin polarization. The two mechanisms rationalize the charge carriers being long-lived in the bulk and surface phases at low and room temperature, respectively. Additionally, strong thermal fluctuations of the topological states' magnetic moments destroy the spin-momentum locking and trigger backscattering at room temperature.

Magnetic Suppression of Non-Hermitian Skin Effects

Skin effect, where macroscopically many bulk states are aggregated toward the system boundary, is one of the most important and distinguishing phenomena in non-Hermitian quantum systems. We discuss a new aspect of this effect whereby, despite its topological origin, applying a magnetic field can largely suppress it. Skin states are pushed back into the bulk, and the skin topological area, which we define, is sharply reduced. As seen from exact solutions of representative models, this is fundamentally rooted in the fact that the applied magnetic field restores the validity of the low-energy description that is rendered inapplicable in the presence of non-Bloch skin states. We further study this phenomenon using rational gauge fluxes, which reveals a unique irrelevance of the generalized Brillouin zone in the standard non-Bloch band theory of non-Hermitian systems.

Dynamics of impurity in the environment of Dirac fermions

We study the dynamics of a nonmagnetic impurity interacting with the surface states of a 3D and 2D topological insulator (TI). Employing the linked cluster technique we develop a formalism for obtaining the Green's function of the mobile impurity interacting with the low-energy Dirac fermions. We show that for the non-recoil case in 2D, the Green's function in the long-time limit has a power-law decay in time implying the breakdown of the quasiparticle description of the impurity. The spectral function in turn exhibits a weak power-law singularity. In the recoil case, however, the reduced phase-space for scattering processes implies a non-zero quasiparticle weight and the presence of a coherent part in the spectral function. Performing a weak coupling analysis we find that the mobility of the impurity reveals aT-3/2divergence at low temperatures. In addition, we show that the Green's function of an impurity interacting with the helical edge modes (surface states of 2D TI) exhibit power-law decay in the long-time limit for both the non-recoil and recoil case (with low impurity momentum), indicating the break down of the quasiparticle picture. However, for impurity with high momentum, the quasiparticle picture is restored. The mobility of the heavy impurity interacting with the helical edge modes exhibits unusual behaviour. It has an exponential divergence at low temperatures which can be tuned to a power-law divergence,T-4, by the application of the magnetic field.

Enhanced electron dephasing in three-dimensional topological insulators

Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional metals and semiconductors, it remains unclear which mechanism is mainly responsible for electron dephasing in three-dimensional topological insulators (TIs). Here, we report on using weak antilocalization effect to measure the dephasing rates in highly tunable (Bi,Sb)₂Te₃ thin films. As the transport is varied from a bulk-conducting regime to surface-dominant transport, the dephasing rate is observed to evolve from a linear temperature dependence to a sublinear power-law dependence. Although the former is consistent with the Nyquist electron-electron interactions commonly seen in ordinary 2D systems, the latter leads to enhanced electron dephasing at low temperatures and is attributed to the coupling between the surface states and the localized charge puddles in the bulk of 3D TIs.

Spin-orbit coupling at surfaces and 2D materials

Spin-orbit interaction gives rise to a splitting of surface states via the Rashba effect, and in topological insulators it leads to the existence of topological surface states. The resulting k(//) momentum separation between states with the opposite spin underlies a wide range of new phenomena at surfaces and interfaces, such as spin transfer, spin accumulation, spin-to-charge current conversion, which are interesting for fundamental science and may become the basis for a breakthrough in the spintronic technology. The present review summarizes recent theoretical and experimental efforts to reveal the microscopic structure and mechanisms of spin-orbit driven phenomena with the focus on angle and spin-resolved photoemission and scanning tunneling microscopy.

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10,000%, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.