Drastic Pressure Effect on the Extremely Large Magnetoresistance in WTe2: Quantum Oscillation Study

Ratio of 4:1 between ZnGeAs2and MnAs phases in a single composite and its impact on the structure-driven magnetoresistance

A strong influence of the lattice degree of freedom on magnetoresistance (MR) under high pressure underlies the conception of 'structure-driven' magnetoresistance (SDMR). In most magnetic or topological materials, the suppression of MR with increasing pressure is a general trend, while for some magnetic composites the MR enhances and even shows unusual behavior as a consequence of structural transition. Here we investigated the SDMR in the composite material based on the ZnGeAs2semiconductor matrix and MnAs magnetic inclusions in a phase ratio of 4:1. At ambient pressure, its magnetic and transport properties are governed by MnAs inclusions, i.e. it shows a Curie temperatureTC≈ 320 K and metallic-like conductivity. Under high pressure, the low-field room temperature MR undergoes multiple changes in the pressure range up to 7.2 GPa. The structural transition in the ZnGeAs2matrix has been found at ∼6 GPa, slightly lower than in the pure ZnGeAs2(6.2 GPa). The huge SDMR as high as 85% at 6.8 GPa and 2.5 kOe, which contains both positive and negative MR components, is accompanied by a pressure-induced metallic-like-to-semiconductor-like transition and the enhanced ferromagnetic order of MnAs inclusions. This observation offers a competing mechanism between the robust extrinsic ferromagnetism and high-pressure electronic properties of ZnGeAs2.

Pressure-Induced Modulation of Tin Selenide Properties: A Review

Tin selenide (SnSe) holds great potential for abundant future applications, due to its exceptional properties and distinctive layered structure, which can be modified using a variety of techniques. One of the many tuning techniques is pressure manipulating using the diamond anvil cell (DAC), which is a very efficient in situ and reversible approach for modulating the structure and physical properties of SnSe. We briefly summarize the advantages and challenges of experimental study using DAC in this review, then introduce the recent progress and achievements of the pressure-induced structure and performance of SnSe, especially including the influence of pressure on its crystal structure and optical, electronic, and thermoelectric properties. The overall goal of the review is to better understand the mechanics underlying pressure-induced phase transitions and to offer suggestions for properly designing a structural pattern to achieve or enhanced novel properties.

Pressure-Induced Superconductivity and Topological Quantum Phase Transitions in the Topological Semimetal ZrTe2

Topological transition metal dichalcogenides (TMDCs) have attracted much attention due to their potential applications in spintronics and quantum computations. In this work, the structural and electronic properties of topological TMDCs candidate ZrTe2 are systematically investigated under high pressure. A pressure-induced Lifshitz transition is evidenced by the change of charge carrier type as well as the Fermi surface. Superconductivity is observed at around 8.3 GPa without structural phase transition. A typical dome-shape phase diagram is obtained with the maximum Tc of 5.6 K for ZrTe2 . Furthermore, the theoretical calculations suggest the presence of multiple pressure-induced topological quantum phase transitions, which coexists with emergence of superconductivity. The results demonstrate that ZrTe2 with nontrivial topology of electronic states displays new ground states upon compression.

Patterned diamond anvils prepared via laser writing for electrical transport measurements of thin quantum materials under pressure

Quantum materials exhibit intriguing properties with important scientific values and huge technological potential. Electrical transport measurements under hydrostatic pressure have been influential in unraveling the underlying physics of many quantum materials in bulk form. However, such measurements have not been applied widely to samples in the form of thin flakes, in which new phenomena can emerge, due to the difficulty in attaching fine wires to a thin sample suitable for high-pressure devices. Here, we utilize a home-built direct laser writing system to functionalize a diamond anvil to directly integrate the capability of conducting electrical transport measurements of thin flakes with a pressure cell. With our methodology, the culet of a diamond anvil is equipped with a set of custom-designed conducting tracks. We demonstrate the superiority of these tracks as electrodes for the studies of thin flakes by presenting the measurement of pressure-enhanced superconductivity and quantum oscillations in a flake of MoTe₂.

Direct Visualization of Large-Scale Intrinsic Atomic Lattice Structure and Its Collective Anisotropy in Air-Sensitive Monolayer 1T'- WTe2

Probing large-scale intrinsic structure of air-sensitive 2D materials with atomic resolution is so far challenging due to their rapid oxidization and contamination. Here, by keeping the whole experiment including growth, transfer, and characterizations in an interconnected atmosphere-control environment, the large-scale intact lattice structure of air-sensitive monolayer 1T'-WTe₂ is directly visualized by atom-resolved scanning transmission electron microscopy. Benefit from the large-scale atomic mapping, collective lattice distortions are further unveiled due to the presence of anisotropic rippling, which propagates perpendicular to only one of the preferential lattice planes in the same WTe₂ monolayer. Such anisotropic lattice rippling modulates the intrinsic point defect (Te vacancy) distribution, in which they aggregate at the constrictive inner side of the undulating structure, presumably due to the ripple-induced asymmetric strain as elaborated by density functional theory. The results pave the way for atomic characterizations and defect engineering of air-sensitive 2D layered materials.

Synthesis of Semiconducting 2H-Phase WTe2 Nanosheets with Large Positive Magnetoresistance

Tungsten ditelluride (WTe₂) is provoking immense interest because of its unique electronic properties, but studies about its semiconducting hexagonal (2H) phase are quite rare. Herein, we report the synthesis of semiconducting 2H WTe₂ nanosheets with large positive magnetoresistance, for the first time, by a simple lithium-intercalation-assisted exfoliation strategy. Systematic characterizations including high-resolution transmission electron microscopy, X-ray diffraction, and Raman and X-ray photoelectron spectroscopies provide clear evidence to distinguish the structure of 2H WTe₂ nanosheets from the orthorhombic (Td) phase bulk counterpart. The corresponding electronic phase transition from metal to semiconductor is also confirmed by density of states calculation, optical absorption, and electrical transport property measurements. Besides, the 2H WTe₂ nanosheets exhibit large positive magnetoresistance with values of up to 29.5% (10 K) and 16.2% (300 K) at 9 T. Overall, these findings open up a promising avenue into the exploration of WTe₂-based materials in the semiconductor field.

Large linear magnetoresistance caused by disorder in WTe2-δthin film

Weyl semimetal WTe2has attracted considerable attention owing to its extremely large, unsaturated and quadratic magnetoresistance. Here, we study the magnetotransport properties of WTe2-δthin film, which shows an unsaturated and linear magnetoresistance of up to ∼1650%. A more complex and accurate method, known as the maximum entropy mobility spectrum, is used to analyze the mobility and density of carriers. The results show that linear magnetoresistance can be explained by the classical disorder model because the slope of linear magnetoresistance and the crossover field are proportional to the mobility and inverse mobility, respectively. Furthermore, the validity of the maximum entropy mobility spectrum is validated by the Shubnikov-de Haas oscillations. Moreover, at low temperature, we determined that the unsaturated and near-quadratic magnetoresistance in the WTe1.93thin film can be explained by charge compensation. Note that the electron-hole compensation is broken in the WTe1.42thin film, which indicates that the carrier scattering induced by the disorder may suppress the charge compensation in the WTe2sample with defects/dopants. To summarize, the discovery of disorder-induced linear magnetoresistance allows us to explain different magnetoresistance behaviors of WTe2.

Detection of Hole Pockets in the Candidate Type-II Weyl Semimetal MoTe_{2} from Shubnikov-de Haas Quantum Oscillations

The bulk electronic structure of T_{d}-MoTe_{2} features large hole Fermi pockets at the Brillouin zone center (Γ) and two electron Fermi surfaces along the Γ-X direction. However, the large hole pockets, whose existence has important implications for the Weyl physics of T_{d}-MoTe_{2}, has never been conclusively detected in quantum oscillations. This raises doubt about the realizability of Majorana states in T_{d}-MoTe_{2}, because these exotic states rely on the existence of Weyl points, which originated from the same band structure predicted by density functional theory (DFT). Here, we report an unambiguous detection of these elusive hole pockets via Shubnikov-de Haas (SdH) quantum oscillations. At ambient pressure, the quantum oscillation frequencies for these pockets are 988 and 1513 T, when the magnetic field is applied along the c axis. The quasiparticle effective masses m^{*} associated with these frequencies are 1.50 and 2.77 m_{e}, respectively, indicating the importance of Coulomb interactions in this system. We further measure the SdH oscillations under pressure. At 13 kbar, we detected a peak at 1798 T with m^{*}=2.86m_{e}. Relative to the oscillation data at a lower pressure, the amplitude of this peak experienced an enhancement, which can be attributed to the reduced curvature of the hole pockets under pressure. Combining our experimental data with DFT+U calculations, where U is the Hubbard parameter, our results shed light on why these important hole pockets have not been detected until now.

Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2

Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe₂, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large nonsaturating MR through in situ tuning of the magneto-transport properties in thin WTe₂ film. With an electrostatic doping approach, we observed a nonmonotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe₂ film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature-dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the nonmagnetic materials with electron-hole pockets.

Nonlinear magnetotransport shaped by Fermi surface topology and convexity

The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we report the observation of nonlinear magnetoresistance at room temperature in a semimetal WTe₂, with an interesting temperature-driven inversion. Theoretical calculations reproduce the nonlinear transport measurements and allow us to attribute the inversion to temperature-induced changes in Fermi surface convexity. We also report a large anisotropy of nonlinear magnetoresistance in WTe₂, due to its low symmetry of Fermi surfaces. The good agreement between experiments and theoretical modeling reveals the critical role of Fermi surface topology and convexity on the nonlinear magneto-response. These results lay a new path to explore ramifications of distinct fermiology for nonlinear transport in condensed-matter.

Anomalous and Polarization-Sensitive Photoresponse of Td -WTe2 from Visible to Infrared Light

Recently, an emergent layered material T_d -WTe₂ was explored for its novel electron-hole overlapping band structure and anisotropic inplane crystal structure. Here, the photoresponse of mechanically exfoliated WTe₂ flakes is investigated. A large anomalous current decrease for visible (514.5 nm), and mid- and far-infrared (3.8 and 10.6 µm) laser irradiation is observed, which can be attributed to light-induced surface bandgap opening from the first-principles calculations. The photocurrent and responsivity can be as large as 40 µA and 250 A W^-1 for a 3.8 µm laser at 77 K. Furthermore, the WTe₂ anomalous photocurrent matches its in-plane crystal structure and exhibits light polarization dependence, maximal for linear laser polarization along the W atom chain a direction and minimal for the perpendicular b direction, with the anisotropic ratio of 4.9. Consistently, first-principles calculations confirm the angle-dependent bandgap opening of WTe₂ under polarized light irradiation. The anomalous and polarization-sensitive photoresponses suggest that linearly polarized light can significantly tune the WTe₂ surface electronic structure, providing a potential approach to detect polarized and broadband lights up to far infrared range.

Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe2

Due to the nontrivial topological band structure in type II Weyl semi-metal tungsten ditelluride (WTe₂), unconventional properties may emerge in its superconducting phase. While realizing intrinsic superconductivity has been challenging in the type II Weyl semi-metal WTe₂, the proximity effect may open an avenue for the realization of superconductivity. Here, we report the observation of proximity-induced superconductivity with a long coherence length along the c axis in WTe₂ thin flakes based on a WTe₂/NbSe₂ van der Waals heterostructure. Interestingly, we also observe anomalous oscillations of the differential resistance during the transition from the superconducting to the normal state. Theoretical calculations show excellent agreement with experimental results, revealing that such a subgap anomaly is the intrinsic property of WTe₂ in superconducting state induced by the proximity effect. Our findings enrich the understanding of the superconducting phase of type II Weyl semi-metals and pave the way for their future applications in topological quantum computing.

Discovery of log-periodic oscillations in ultraquantum topological materials

Quantum oscillations are usually the manifestation of the underlying physical nature in condensed matter systems. Here, we report a new type of log-periodic quantum oscillations in ultraquantum three-dimensional topological materials. Beyond the quantum limit (QL), we observe the log-periodic oscillations involving up to five oscillating cycles (five peaks and five dips) on the magnetoresistance of high-quality single-crystal ZrTe₅, virtually showing the clearest feature of discrete scale invariance (DSI). Further, theoretical analyses show that the two-body quasi-bound states can be responsible for the DSI feature. Our work provides a new perspective on the ground state of topological materials beyond the QL.

Nonequilibrium Magnetic Oscillation with Cylindrical Vector Beams

Magnetic oscillation is a generic property of electronic conductors under magnetic fields and widely appreciated as a useful probe of their electronic band structure, i.e. the Fermi surface geometry. However, the usage of the strong static magnetic field makes the measurement insensitive to the magnetic order of the target material. That is, the magnetic order is anyhow turned into a forced ferrromagnetic one. Here we theoretically propose an experimental method of measuring the magnetic oscillation in a magnetic-order-resolved way by using the azimuthal cylindrical vector (CV) beam, an example of topological lightwaves. The azimuthal CV beam is unique in that, when focused tightly, it develops a pure longitudinal magnetic field. We argue that this characteristic focusing property and the discrepancy in the relaxation timescale between conduction electrons and localized magnetic moments allow us to develop the nonequilibrium analogue of the magnetic oscillation measurement. Our optical method would be also applicable to metals under the ultra-high pressure of diamond anvil cells.

Superconductivity in Potassium-Intercalated T d-WTe2

To realize a topological superconductor is one of the most attracting topics because of its great potential in quantum computation. In this study, we successfully intercalate potassium (K) into the van der Waals gap of type II Weyl semimetal WTe₂ and discover the superconducting state in K _xWTe₂ through both electrical transport and scanning tunneling spectroscopy measurements. The superconductivity exhibits an evident anisotropic behavior. Moreover, we also uncover the coexistence of superconductivity and the positive magnetoresistance state. Structural analysis substantiates the negligible lattice expansion induced by the intercalation, therefore suggesting K-intercalated WTe₂ still hosts the topological nontrivial state. These results indicate that the K-intercalated WTe₂ may be a promising candidate to explore the topological superconductor.

Inducing Strong Superconductivity in WTe2 by a Proximity Effect

The search for proximity-induced superconductivity in topological materials has generated widespread interest in the condensed matter physics community. The superconducting states inheriting nontrivial topology at interfaces are expected to exhibit exotic phenomena such as topological superconductivity and Majorana zero modes, which hold promise for applications in quantum computation. However, a practical realization of such hybrid structures based on topological semimetals and superconductors has hitherto been limited. Here, we report the strong proximity-induced superconductivity in type-II Weyl semimetal WTe₂, in a van der Waals hybrid structure obtained by mechanically transferring NbSe₂ onto various thicknesses of WTe₂. When the WTe₂ thickness ( t_WTe2) reaches 21 nm, the superconducting transition occurs around the critical temperature ( T_c) of NbSe₂ with a gap amplitude (Δ_p) of 0.38 meV and an unexpected ultralong proximity length ( l_p) up to 7 μm. With the thicker 42 nm WTe₂ layer, however, the proximity effect yields T_c ≈ 1.2 K, Δ_p = 0.07 meV, and a short l_p of less than 1 μm. Our theoretical calculations, based on the Bogoliubov-de Gennes equations in the clean limit, predict that the induced superconducting gap is a sizable fraction of the NbSe₂ superconducting one when t_WTe2 is less than 30 nm and then decreases quickly as t_WTe2 increases. This agrees qualitatively well with the experiments. Such observations form a basis in the search for superconducting phases in topological semimetals.

Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films

The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically protected spin-polarized states and can carry a very large current density. In addition, the intrinsic non-centrosymmetry of WTe2 and MoTe2 endows with a unique property of crystal symmetry-controlled spin-orbit torques. An important question to be answered for developing spintronic devices is how spins relax in WTe2 and MoTe2. Here, a room-temperature spin relaxation time of 1.2 ns (0.4 ns) in WTe2 (MoTe2) thin film using the time-resolved Kerr rotation (TRKR) is reported. Based on ab initio calculation, a mechanism of long-lived spin polarization resulting from a large spin splitting around the bottom of the conduction band, low electron-hole recombination rate, and suppression of backscattering required by time-reversal and lattice symmetry operation is identified. In addition, it is found that the spin polarization is firmly pinned along the strong internal out-of-plane magnetic field induced by large spin splitting. This work provides an insight into the physical origin of long-lived spin polarization in Weyl semimetals, which could be useful to manipulate spins for a long time at room temperature.

Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spin-orbit coupling

Transition-metal chalcogenides host various phases of matter, such as charge-density wave (CDW), superconductors, and topological insulators or semimetals. Superconductivity and its competition with CDW in low-dimensional compounds have attracted much interest and stimulated considerable research. Here we report pressure induced superconductivity in a strong spin-orbit (SO) coupled quasi-one-dimensional (1D) transition-metal chalcogenide NbTe₄, which is a CDW material under ambient pressure. With increasing pressure, the CDW transition temperature is gradually suppressed, and superconducting transition, which is fingerprinted by a steep resistivity drop, emerges at pressures above 12.4 GPa. Under pressure p = 69 GPa, zero resistance is detected with a transition temperature T_c = 2.2 K and an upper critical field μ₀H_c2 = 2 T. We also find large magnetoresistance (MR) up to 102% at low temperatures, which is a distinct feature differentiating NbTe₄ from other conventional CDW materials.

Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping

We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.

Enhanced Electrocatalytic Hydrogen Evolution from Large-Scale, Facile-Prepared, Highly Crystalline WTe2 Nanoribbons with Weyl Semimetallic Phase

Tungsten ditellurium (WTe₂) is one of most important layered transition metal dichalcogenides (TMDs) and exhibits various prominent physical properties. All the present methods for WTe₂ preparation need strict conditions such as high temperature or cannot be applied in large scale, which limits its practical applications. In addition, most studies on WTe₂ focus on its physical properties, whereas its electrochemical properties are still illusive with little investigation. Here, we develop a facile and scalable two-step method to synthesize high-quality WTe₂ nanoribbon crystals with 1T' Weyl semimetal phase for the first time. Highly crystalline 1T'-WTe₂ nanoribbons can be obtained on a large scale through this two-step method. In addition, the electrochemical tests show that WTe₂ nanoribbons exhibit smaller overpotential and much better hydrogen evolution reaction catalytic performance than other tungsten-based sulfide and selenide (WS₂, WSe₂) nanoribbons of same morphology and under same preparation conditions. WTe₂ nanoribbons show a Tafel slope of 57 mV/dec, which is one of best values for TMD catalysts and about 2 and 4 times smaller than that for 2H-WS₂ nanoribbons (135 mV/dec) and 2H-WSe₂ nanoribbons (213 mV/dec), respectively. 1T'-WTe₂ nanoribbons also show ultrahigh stability in 5000 cycles and 20 h at 10 mA/cm². The better performance is attributed to high conductivity of semimetallic 1T'-phase-stable WTe₂ nanoribbons with one or two order higher charge-transfer rate than normally semiconducting 2H-stable WS₂ and WSe₂ nanoribbons. These results open the door for electrochemical applications of Weyl semimetallic TMDs.

Evidence for topological type-II Weyl semimetal WTe2

Recently, a type-II Weyl fermion was theoretically predicted to appear at the contact of electron and hole Fermi surface pockets. A distinguishing feature of the surfaces of type-II Weyl semimetals is the existence of topological surface states, so-called Fermi arcs. Although WTe₂ was the first material suggested as a type-II Weyl semimetal, the direct observation of its tilting Weyl cone and Fermi arc has not yet been successful. Here, we show strong evidence that WTe₂ is a type-II Weyl semimetal by observing two unique transport properties simultaneously in one WTe₂ nanoribbon. The negative magnetoresistance induced by a chiral anomaly is quite anisotropic in WTe₂ nanoribbons, which is present in b-axis ribbon, but is absent in a-axis ribbon. An extra-quantum oscillation, arising from a Weyl orbit formed by the Fermi arc and bulk Landau levels, displays a two dimensional feature and decays as the thickness increases in WTe₂ nanoribbon.

Exotic transport properties of type-II Weyl semimetals have been predicted but are yet to be experimentally evidenced. Here, Li et al. report evidences of an anisotropy of negative magnetoresistance and a quantum oscillation arising from the predicted Weyl orbit in the type-II Weyl semimetal WTe₂.

Disruption of the Accidental Dirac Semimetal State in ZrTe_{5} under Hydrostatic Pressure

We study the effect of hydrostatic pressure on the magnetotransport properties of zirconium pentatelluride. The magnitude of resistivity anomaly gets enhanced with increasing pressure, but the transition temperature T^{*} is insensitive to it up to 2.5 GPa. In the case of H∥b, the quasilinear magnetoresistance decreases drastically from 3300% (9 T) at ambient pressure to 230% (9 T) at 2.5 GPa. Besides, the change of the quantum oscillation phase from topological nontrivial to trivial is revealed around 2 GPa. Both demonstrate that the pressure breaks the accidental Dirac node in ZrTe_{5}. For H∥c, in contrast, subtle changes can be seen in the magnetoresistance and quantum oscillations. In the presence of pressure, ZrTe_{5} evolves from a highly anisotropic to a nearly isotropic electronic system, which accompanies the disruption of the accidental Dirac semimetal state. It supports the assumption that ZrTe_{5} is a semi-3D Dirac system with linear dispersion along two directions and a quadratic one along the third.

Anomalous in-plane anisotropic Raman response of monoclinic semimetal 1 T´-MoTe 2

The recently discovered two-dimensional (2D) semimetal 1 T´-MoTe₂ exhibits colossal magnetoresistance and superconductivity, driving a strong research interest in the material’s quantum phenomena. Unlike the typical hexagonal structure found in many 2D materials, the 1 T´-MoTe₂ lattice has strong in-plane anisotropy. A full understanding of the anisotropy is necessary for the fabrication of future devices which may exploit these quantum and topological properties, yet a detailed study of the material’s anisotropy is currently lacking. While angle resolved Raman spectroscopy has been used to study anisotropic 2D materials, such as black phosphorus, there has been no in-depth study of the Raman dependence of 1 T´-MoTe₂ on different layer numbers and excitation energies. Here, our angle resolved Raman spectroscopy shows intricate Raman anisotropy dependences of 1 T´-MoTe₂ on polarization, flake thickness (from single layer to bulk), photon, and phonon energies. Using a Paczek approximation, the anisotropic Raman response can be captured in a classical framework. Quantum mechanically, first-principle calculations and group theory reveal that the anisotropic electron-photon and electron-phonon interactions are nontrivial in the observed responses. This study is a crucial step to enable potential applications of 1 T´-MoTe₂ in novel electronic and optoelectronic devices where the anisotropic properties might be utilized for increased functionality and performance.

Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes

This article reports the characterization of WTe₂ thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe₂ thin films.

Angle-resolved photoemission spectroscopy for the study of two-dimensional materials

Quantum systems in confined geometries allow novel physical properties that cannot easily be attained in their bulk form. These properties are governed by the changes in the band structure and the lattice symmetry, and most pronounced in their single layer limit. Angle-resolved photoemission spectroscopy (ARPES) is a direct tool to investigate the underlying changes of band structure to provide essential information for understanding and controlling such properties. In this review, recent progresses in ARPES as a tool to study two-dimensional atomic crystals have been presented. ARPES results from few-layer and bulk crystals of material class often referred as “beyond graphene” are discussed along with the relevant developments in the instrumentation.

Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

Transitional metal ditelluride WTe₂ has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe₂. Here, we report a successful synthesis of mono- to few-layer WTe₂ via chemical vapor deposition. Using atomically thin WTe₂ nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe₂ from weak antilocalization to weak localization, revealing a strong electrical field modulation of the spin-orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe₂ as a promising platform for exotic electronic and spintronic device applications.

Spin splitting and reemergence of charge compensation in monolayer WTe2by 3d transition-metal adsorption

Transition-metal adsorption effectively modifies the intrinsic properties of monolayer WTe₂, where the electron–hole pockets reemerge with Ni adatom.

Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating

The semimetallic, two-dimensional layered transition metal dichalcogenide WTe₂ has raised considerable interest due to its huge, non-saturating magnetoresistance. While for the origin of this effect, a close-to-ideal balance of electrons and holes has been put forward, the carrier concentration dependence of the magnetoresistance remains to be clarified. Here, we present a detailed study of the magnetotransport behaviour of ultrathin, mechanically exfoliated WTe₂ sheets as a function of electrostatic back gating. The carrier concentration and mobility, determined using the two band model and analysis of the Shubnikov-de Haas oscillations, indicate enhanced surface scattering for the thinnest sheets. By the back gate action, the magnetoresistance could be tuned by up to ∼100% for a ∼13 nm-thick WTe₂ sheet.

Direct Observation of a Long-Range Field Effect from Gate Tuning of Nonlocal Conductivity

We report the direct observation of a long-range field effect in WTe_{2} devices, leading to large gate-induced changes of transport through crystals much thicker than the electrostatic screening length. The phenomenon-which manifests itself very differently from the conventional field effect-originates from the nonlocal nature of transport in the devices that are thinner than the carrier mean free path. We reproduce theoretically the gate dependence of the measured classical and quantum magnetotransport, and show that the phenomenon is caused by the gate tuning of the bulk carrier mobility by changing the scattering at the surface. Our results demonstrate experimentally the possibility to gate tune the electronic properties deep in the interior of conducting materials, avoiding limitations imposed by electrostatic screening.

Pressure-Induced New Topological Weyl Semimetal Phase in TaAs

We report a new pressure-induced phase in TaAs with different Weyl fermions than the ambient structure with the aid of theoretical calculations, experimental transport and synchrotron structure investigations up to 53 GPa. We show that TaAs transforms from an ambient I4_{1}md phase (t-TaAs) to a high-pressure hexagonal P-6m2  (h-TaAs) phase at 14 GPa, along with changes of the electronic state from containing 24 Weyl nodes distributed at two energy levels to possessing 12 Weyl nodes at an isoenergy level, which substantially reduces the interference between the surface and bulk states. The new pressure-induced phase can be reserved upon releasing pressure to ambient condition, which allows one to study the exotic behavior of a single set of Weyl fermions, such as the interplay between surface states and other properties.

Coherent optical phonon oscillation and possible electronic softening in WTe2 crystals

A rapidly-growing interest in WTe2 has been triggered by the giant magnetoresistance effect discovered in this unique system. While many efforts have been made towards uncovering the electron- and spin-relevant mechanisms, the role of lattice vibration remains poorly understood. Here, we study the coherent vibrational dynamics in WTe2 crystals by using ultrafast pump-probe spectroscopy. The oscillation signal in time domain in WTe2 has been ascribed as due to the coherent dynamics of the lowest energy A1 optical phonons with polarization- and wavelength-dependent measurements. With increasing temperature, the phonon energy decreases due to anharmonic decay of the optical phonons into acoustic phonons. Moreover, a significant drop (15%) of the phonon energy with increasing pump power is observed which is possibly caused by the lattice anharmonicity induced by electronic excitation and phonon-phonon interaction.

Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

Recently, the layered semimetal WTe₂ has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10⁵%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe₂ crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe₂ crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe_1.80) and the highest Mo isovalent substitution samples (W_0.7Mo_0.3Te₂) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe₂ crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe₂.

Single- and few-layer WTe2 and their suspended nanostructures: Raman signatures and nanomechanical resonances

Single crystal tungsten ditelluride (WTe2) has recently been discovered to exhibit non-saturating extreme magnetoresistance in bulk; it has also emerged as a new layered material from which atomic layer crystals can be extracted. While atomically thin WTe2 is attractive for its unique properties, little research has been conducted on single- and few-layer WTe2. Here we report the isolation of single- and few-layer WTe2, as well as the fabrication and characterization of the first WTe2 suspended nanostructures. We have observed new Raman signatures of single- and few-layer WTe2 that have been theoretically predicted but have not been reported to date, in both on-substrate and suspended WTe2 flakes. We have further probed the nanomechanical properties of suspended WTe2 structures by measuring their flexural resonances, and obtain a Young's modulus of E(Y) ≈ 80 GPa for the suspended WTe2 flakes. This study paves the way for future investigations and utilizations of the multiple new Raman fingerprints of single- and few-layer WTe2, and for explorations of mechanical control of WTe2 atomic layers.

The polarization-dependent anisotropic Raman response of few-layer and bulk WTe2under different excitation wavelengths

WTe₂, which is an orthorhombic semimetal crystallized in Td phase, exhibts distinct in-plane anisotropy. The Raman modes depict different anisotropic response by rotating the incident polarization under different excitation wavelengths.

Tuning magnetotransport in a compensated semimetal at the atomic scale

Either in bulk form, or in atomically thin crystals, layered transition metal dichalcogenides continuously reveal new phenomena. The latest example is 1T'-WTe2, a semimetal found to exhibit the largest known magnetoresistance in the bulk, and predicted to become a topological insulator in strained monolayers. Here we show that reducing the thickness through exfoliation enables the electronic properties of WTe2 to be tuned, which allows us to identify the mechanisms responsible for the observed magnetotransport down to the atomic scale. The longitudinal resistance and the unconventional magnetic field dependence of the Hall resistance are reproduced quantitatively by a classical two-band model for crystals as thin as six monolayers, whereas a crossover to an Anderson insulator occurs for thinner crystals. Besides establishing the origin of the magnetoresistance of WTe2, our results represent a complete validation of the classical theory for two-band electron-hole transport, and indicate that atomically thin WTe2 layers remain gapless semimetals.

Signature of Strong Spin-Orbital Coupling in the Large Nonsaturating Magnetoresistance Material WTe2

We report the detailed electronic structure of WTe2 by high resolution angle-resolved photoemission spectroscopy. We resolved a rather complicated Fermi surface of WTe2. Specifically, there are in total nine Fermi pockets, including one hole pocket at the Brillouin zone center Γ, and two hole pockets and two electron pockets on each side of Γ along the Γ-X direction. Remarkably, we have observed circular dichroism in our photoemission spectra, which suggests that the orbital angular momentum exhibits a rich texture at various sections of the Fermi surface. This is further confirmed by our density-functional-theory calculations, where the spin texture is qualitatively reproduced as the conjugate consequence of spin-orbital coupling. Since the spin texture would forbid backscatterings that are directly involved in the resistivity, our data suggest that the spin-orbit coupling and the related spin and orbital angular momentum textures may play an important role in the anomalously large magnetoresistance of WTe2. Furthermore, the large differences among spin textures calculated for magnetic fields along the in-plane and out-of-plane directions also provide a natural explanation of the large field-direction dependence on the magnetoresistance.

Temperature-Induced Lifshitz Transition in WTe2

We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X-Γ-X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T≃160  K, associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ(T) due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T≈175  K and a breakdown of Kohler's rule in the 70-140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals.

Superconductivity emerging from a suppressed large magnetoresistant state in tungsten ditelluride

The recent discovery of large magnetoresistance in tungsten ditelluride provides a unique playground to find new phenomena and significant perspective for potential applications. The large magnetoresistance effect originates from a perfect balance of hole and electron carriers, which is sensitive to external pressure. Here we report the suppression of the large magnetoresistance and emergence of superconductivity in pressurized tungsten ditelluride via high-pressure synchrotron X-ray diffraction, electrical resistance, magnetoresistance and alternating current magnetic susceptibility measurements. Upon increasing pressure, the positive large magnetoresistance effect is gradually suppressed and turned off at a critical pressure of 10.5 GPa, where superconductivity accordingly emerges. No structural phase transition is observed under the pressure investigated. In situ high-pressure Hall coefficient measurements at low temperatures demonstrate that elevating pressure decreases the population of hole carriers but increases that of the electron ones. Significantly, at the critical pressure, a sign change of the Hall coefficient is observed.

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride

Tungsten ditelluride has attracted intense research interest due to the recent discovery of its large unsaturated magnetoresistance up to 60 T. Motivated by the presence of a small, sensitive Fermi surface of 5d electronic orbitals, we boost the electronic properties by applying a high pressure, and introduce superconductivity successfully. Superconductivity sharply appears at a pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of 7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasing pressure, thereby exhibiting the typical dome-shaped superconducting phase. From theoretical calculations, we interpret the low-pressure region of the superconducting dome to an enrichment of the density of states at the Fermi level and attribute the high-pressure decrease in Tc to possible structural instability. Thus, tungsten ditelluride may provide a new platform for our understanding of superconductivity phenomena in transition metal dichalcogenides.