Near-Field Observation of the Photonic Spin Hall Effect

The photonic spin Hall effect, referring to the spatial separation of photons with opposite spins due to spin-orbit interactions, has enabled potential for various spin-sensitive applications and devices. Here, using scattering-type near-field scanning optical microscopy, we observe spin-orbit interactions introduced by a subwavelength semiring antenna integrated in a plasmonic circuit. Clear evidence of unidirectional excitation of surface plasmon polaritons is obtained by direct comparison of the amplitude- and phase-resolved near-field maps of the plasmonic nanocircuit under excitation with photons of opposite spin states coupled to a plasmonic nanoantenna. We present details of the antenna design and experimental methods to investigate the spatial variation of complex electromagnetic fields in a spin-sensitive plasmonic circuit. The reported findings offer valuable insights into the generation, characterization, and application of the photonic spin Hall effect in photonic integrated circuits for future and emerging spin-selective nanophotonic systems.

Stabilizing the Inverted Phase of a WSe2/BLG/WSe2 Heterostructure via Hydrostatic Pressure

Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin-orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten diselenide (WSe2) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.

Zeeman- and Orbital-Driven Phase Shifts in Planar Josephson Junctions

We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to φ0 = 0.5π, which are consistent with a Zeeman field coupling to highly transmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit, and orbital effects in InAs/Al JJs, giving improved understanding of phase transitions in hybrid JJs and their applications in quantum computing and superconducting electronics.

Single-Atomic-Layer Stanene on Ferromagnetic Co Nanoislands with Topological Band Structures

Introducing magnetism to two-dimensional topological insulators is a central issue in the pursuit of magnetic topological materials in low dimensionality. By means of low-temperature growth at 80 K, we succeeded in fabricating a monolayer stanene on Co/Cu(111) and resolving ferromagnetic spin contrast by field-dependent spin-polarized scanning tunneling microscopy (SP-STM). Increases of both remanence to saturation magnetization ratio (M_r/M_s) and coercive field (H_c) due to an enhanced perpendicular magnetic anisotropy (PMA) are further identified by out-of-plane magneto-optical Kerr effect (MOKE). In addition to ultraflat stanene fully relaxed on bilayer Co/Cu(111) from density functional theory (DFT), characteristic topological properties including an in-plane s-p band inversion and a spin-orbit coupling (SOC) induced gap about 0.25 eV at the Γ̅ point have also been verified in the Sn-projected band structure. Interfacial coupling of single-atomic-layer stanene with ferromagnetic Co biatomic layers allows topological band features to coexist with ferromagnetism, facilitating a conceptual design of atomically thin magnetic topological heterostructures.

Small Charging Energies and g-Factor Anisotropy in PbTe Quantum Dots

PbTe is a semiconductor with promising properties for topological quantum computing applications. Here, we characterize electron quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140 μeV and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron g-factor as a function of magnetic field direction. We find the g-factor tensor to be highly anisotropic with principal g-factors ranging from 0.9 to 22.4 and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots.

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin-orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge noise and hyperfine interaction. Here, we demonstrate a scalable approach to synthesize and organize Ge nanowires on silicon (100)-oriented substrates. Germanium nanowire networks are obtained by selectively growing on nanopatterned slits in a metalorganic vapor phase epitaxy system. Low-temperature electronic transport measurements are performed on nanowire Hall bar devices revealing high hole doping of ∼10¹⁸ cm^-3 and mean free path of ∼10 nm. Quantum diffusive transport phenomena, universal conductance fluctuations, and weak antilocalization are revealed through magneto transport measurements yielding a coherence and a spin-orbit length of the order of 100 and 10 nm, respectively.

Creating Tunable Quantum Corrals on a Rashba Surface Alloy

Artificial lattices derived from assembled atoms on a surface using scanning tunneling microscopy present a platform to create matter with tailored electronic, magnetic, and topological properties. However, artificial lattice studies to date have focused exclusively on surfaces with weak spin-orbit coupling. Here, we illustrate the creation and characterization of quantum corrals from iron atoms on the prototypical Rashba surface alloy BiCu₂, using low-temperature scanning tunneling microscopy and spectroscopy. We observe very complex interference patterns that result from the interplay of the size of the confinement potential, the intricate multiband scattering, and hexagonal warping from the underlying band structure. On the basis of a particle-in-a-box model that accounts for the observed multiband scattering, we qualitatively link the resultant confined wave functions with the contributions of the various scattering channels. On the basis of these results, we studied the coupling of two quantum corrals and the effect of the underlying warping toward the creation of artificial dimer states. This platform may provide a perspective toward the creation of correlated artificial lattices with nontrivial topology.

Circular Polarization Conversion in Single Plasmonic Spherical Particles

Temporal and spectral behaviors of plasmons determine their ability to enhance the characteristics of metamaterials tailored to a wide range of applications, including electric-field enhancement, hot-electron injection, sensing, as well as polarization and angular momentum manipulation. We report a dark-field (DF) polarimetry experiment on single particles with incident circularly polarized light in which gold nanoparticles scatter with opposite handedness at visible wavelengths. Remarkably, for silvered nanoporous silica microparticles, the handedness conversion occurs at longer visible wavelengths, only after adsorption of molecules on the silver. Finite element analysis (FEA) allows matching the circular polarization (CP) conversion to dominant quadrupolar contributions, determined by the specimen size and complex susceptibility. We hypothesize that the damping accompanying the adsorption of molecules on the nanostructured silver facilitates the CP conversion. These results offer new perspectives in molecule sensing and materials tunability for light polarization conversion and control of light spin angular momentum at submicroscopic scale.

InSbAs Two-Dimensional Electron Gases as a Platform for Topological Superconductivity

Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material systems. Among these, two-dimensional electron gases (2DEGs) are of particular interest due to their inherent design flexibility and scalability. Here, we discuss results on a 2D platform based on a ternary 2DEG (InSbAs) coupled to in situ grown aluminum. The spin-orbit coupling in these 2DEGs can be tuned with the As concentration, reaching values up to 400 meV Å, thus exceeding typical values measured in its binary constituents. In addition to a large Landé g-factor of ∼55 (comparable to that of InSb), we show that the clean superconductor-semiconductor interface leads to a hard induced superconducting gap. Using this new platform, we demonstrate the basic operation of phase-controllable Josephson junctions, superconducting islands, and quasi-1D systems, prototypical device geometries used to study Majorana zero modes.

Anisotropic g-Factor and Spin-Orbit Field in a Germanium Hut Wire Double Quantum Dot

Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly anisotropic leakage current in the spin blockade regime for a double dot, we extract the full g-tensor and find that the spin-orbit field is in plane with an azimuthal angle of 59° to the axis of the nanowire. The direction of the spin-orbit field indicates a strong spin-orbit interaction along the nanowire, which may have originated from the interface inversion asymmetry in Ge hut wires. We also demonstrate two different spin relaxation mechanisms for the holes in the Ge hut wire double dot: spin-flip co-tunneling to the leads, and spin-orbit interaction within the double dot. These results help establish feasibility of a Ge-based quantum processor.

Switchable Enhanced Spin Photocurrent in Rashba and Cubic Dresselhaus Ferroelectric Semiconductors

Generating and controlling spin current (SC) are of central interest in spin physics and applications. To date, the spin-orbit interaction (SOI) is an established pathway to generate SC through the spin-charge current conversion. We predict an efficient spin-light conversion via the Rashba and higher-order cubic Dresselhaus SOIs in ferroelectrics. Different from the known Edelstein effect, where SC is created by the nonequilibrium spin density, our predicted spin-polarized current is from direct interactions between light and unique spin textures generated by SOI in ferroelectrics. Using first-principles simulations, we demonstrate these concepts by calculating the DC spin photocurrent in a prototypical Rashba ferroelectric, α-GeTe. The photoinduced SC is about 2 orders of magnitude larger than the charge photocurrent. More importantly, we can conveniently switch the direction of SC by an applied electric field via inverting the spin textures. These predictions give hope to generating and controlling light-driven SC via a nonvolatile electric field.

Spin-Orbit-Induced Ising Ferromagnetism at a van der Waals Interface

Magnetocrystalline anisotropy, a key ingredient for establishing long-range order in a magnetic material down to the two-dimensional (2D) limit, is generally associated with spin-orbit interaction (SOI) involving a finite orbital angular momentum. Here we report strong out-of-plane magnetic anisotropy without orbital angular momentum, emerging at the interface between two different van der Waals (vdW) materials, an archetypal metallic vdW material NbSe₂ possessing Zeeman-type SOI and an isotropic vdW ferromagnet V₅Se₈. We found that the Zeeman SOI in NbSe₂ induces robust out-of-plane magnetic anisotropy in V₅Se₈ down to the 2D limit with a more than 2-fold enhancement of the transition temperature. We propose a simple model that takes into account the energy gain in NbSe₂ in contact with a ferromagnet, which naturally explains our observations. Our results demonstrate a conceptually new magnetic proximity effect at the vdW interface, expanding the horizons of emergent phenomena achievable in vdW heterostructures.

Enhanced Spin-Orbit Coupling in Heavy Metals via Molecular Coupling

5d metals are used in electronics because of their high spin-orbit coupling (SOC) leading to efficient spin-electric conversion. When C₆₀ is grown on a metal, the electronic structure is altered due to hybridization and charge transfer. In this work, we measure the spin Hall magnetoresistance for Pt/C₆₀ and Ta/C₆₀, finding that they are up to a factor of 6 higher than those for pristine metals, indicating a 20-60% increase in the spin Hall angle. At low fields of 1-30 mT, the presence of C₆₀ increased the anisotropic magnetoresistance by up to 700%. Our measurements are supported by noncollinear density functional theory calculations, which predict a significant SOC enhancement by C₆₀ that penetrates through the Pt layer, concomitant with trends in the magnetic moment of transport electrons acquired via SOC and symmetry breaking. The charge transfer and hybridization between the metal and C₆₀ can be controlled by gating, so our results indicate the possibility of dynamically modifying the SOC of thin metals using molecular layers. This could be exploited in spin-transfer torque memories and pure spin current circuits.

High-Order Nonlinear Spin-Orbit Interaction on Plasmonic Metasurfaces

In linear optics, the angular momentum of light can be easily manipulated through the optical spin-orbit interaction (SOI) in structured media such as liquid crystals, metasurfaces, and forked gratings. Similarly, metasurfaces can be used to generate nonlinear optical beams with both custom-defined spin angular momentum (SAM) and orbital angular momentum (OAM) states. However, it has been limited to a low-order process in which only a Gaussian-shaped fundamental wave is used. In this work, the high-order nonlinear optical SOI effect on metasurfaces is demonstrated through the generation of multiple angular momentum states in nonlinear waves. This is achieved by exploiting the degrees of freedom provided by both the SAM and the OAM states of the fundamental wave (FW) and the topological charges of the plasmonic metasurfaces. The mechanism of both intrinsic and extrinsic contributions to the OAM of the nonlinear waves is revealed. High-order nonlinear SOI on metasurfaces offers new opportunities for realizing ultracompact nonlinear vortex beams.

Remote Doping of Scalable Nanowire Branches

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localization-a signature of strong spin-orbit interaction-across a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.

Transition from Semimetal to Semiconductor in ZrTe2 Induced by Se Substitution

Two-dimensional layered transition-metal telluride can build stable metallic, metastable metallic, or semimetallic polymorphic crystal structures with enormous technological and scientific applications. Herein the hexagonal structures of zirconium ditelluride (ZrTe₂) and ZrTe_2(1-x)Se_2x (0 ≤ x ≤ 1) single crystals were selectively synthesized through the chemical vapor transport method. The electronic band structures were systematically studied through angle-resolved photoemission spectroscopy (ARPES) combined with first-principles density functional theory (DFT) calculations. The ARPES results suggested a clear electronic phase transition from a semimetal to a semiconductor in ZrTe_2(1-x)Se_2x with the x value changing. Compared with pristine ZrTe₂, the valence band splitting in ZrTe_2(1-x)Se_2x decreased at the Γ point due to the reduction of the spin-orbit interaction, whereas an indirect band gap opened in the vicinity of the Fermi level with the increase in Se concentration. Our DFT calculations further confirmed that the substituted Se atoms on Te sites could affect the band structure of ZrTe₂ to induce a distinct transition from semimetal to semiconductor, suggesting their high potential for valleytronics applications.

Spin-Orbit Interaction of Light in Plasmonic Lattices

In the past decade, the spin-orbit interaction (SOI) of light has been a driving force in the design of metamaterials, metasurfaces, and schemes for light-matter interaction. A hallmark of the spin-orbit interaction of light is the spin-based plasmonic effect, converting spin angular momentum of propagating light to near-field orbital angular momentum. Although this effect has been thoroughly investigated in circular symmetry, it has yet to be characterized in a noncircular geometry, where whirling, periodic plasmonic fields are expected. Using phase-resolved near-field microscopy, we experimentally demonstrate the SOI of circularly polarized light in nanostructures possessing dihedral symmetry. We show how interaction with hexagonal slits results in four topologically different plasmonic lattices, controlled by engineered boundary conditions, and reveal a cyclic nature of the spin-based plasmonic effect which does not exist for circular symmetry. Finally, we calculate the optical forces generated by the plasmonic lattices, predicting that light with mere spin angular momentum can exert torque on a multitude of particles in an ordered fashion to form an optical nanomotor array. Our findings may be of use in both biology and chemistry, as a means for simultaneous trapping, manipulation, and excitation of multiple objects, controlled by the polarization of light.

Reversible Mapping and Sorting the Spin of Photons on the Nanoscale: A Spin-Optical Nanodevice

The photon spin is an important resource for quantum information processing as is the electron spin in spintronics. However, for subwavelength confined optical excitations, polarization as a global property of a mode cannot be defined. Here, we show that any polarization state of a plane-wave photon can reversibly be mapped to a pseudospin embodied by the two fundamental modes of a subwavelength plasmonic two-wire transmission line. We design a device in which this pseudospin evolves in a well-defined fashion throughout the device reminiscent of the evolution of photon polarization in a birefringent medium and the behavior of electron spins in the channel of a spin field-effect transistor. The significance of this pseudospin is enriched by the fact that it is subject to spin-orbit locking. Combined with optically active materials to exert external control over the pseudospin precession, our findings could enable spin-optical transistors, that is, the routing and processing of quantum information with light on a subwavelength scale.

On-Chip Detection of Optical Spin-Orbit Interactions in Plasmonic Nanocircuits

On-chip manipulating and controlling the temporal and spatial evolution of light are of crucial importance for information processing in future planar integrated nanophotonics. The spin and orbital angular momentum of light, which can be treated independently in classical macroscopic geometrical optics, appear to be coupled on subwavelength scales. We use spin-orbit interactions in a plasmonic achiral nanocoupler to unidirectionally excite surface plasmon polariton modes propagating in seamlessly integrated plasmonic slot waveguides. The spin-dependent flow of light in the proposed nanophotonic circuit allows on-chip electrical detection of the spin state of incident photons by integrating two germanium-based plasmonic-waveguide photodetectors. Consequently, our device serves as a compact (∼6 × 18 μm²) electrical sensor for photonic spin Hall dynamics. The demonstrated configuration opens new avenues for developing highly integrated polarization-controlled optical devices that would exploit the spin-degree of freedom for manipulating and controlling subwavelength optical modes in nanophotonic systems.

Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets

Low-dimensional narrow band gap III-V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying Majorana zero modes and non-Abelian statistics relevant for topological quantum computation. So far, most of experimental studies were performed on hybrid devices based on one-dimensional semiconductor nanowires. In order to build complex topological circuits toward scalable quantum computing, exploring high-mobility two-dimensional (2D) III-V compound electron system with strong spin-orbit coupling is highly desirable. Here, we study quantum transport in high-mobility InSb nanosheet grown by molecular-beam epitaxy. The observations of Shubnikov-de Hass oscillations and quantum Hall states, together with the angular dependence of magnetotransport measurements, provide the evidence for the 2D nature of electronic states in InSb nanosheet. The presence of strong spin-orbit coupling in the InSb nanosheet is verified by the low-field magnetotransport measurements, characterized by weak antilocalization effect. Finally, we demonstrate the realization of high-quality InSb nanosheet-superconductor junctions with transparent interface. Our results not only advance the study of 2D quantum transport but also open up opportunities for developing hybrid topological devices based on 2D semiconducting nanosheets with strong spin-orbit coupling.

Helical Hole State in Multiple Conduction Modes in Ge/Si Core/Shell Nanowire

Helical states, a prerequisite for the engineering of Majorana zero modes in solid-state systems, have recently been reported in the conduction band of III-V nanowires (NWs) subject to strong Rashba spin-orbit interaction. We report the observation of re-entrant conductance features consistent with the presence of helical hole states in multiple conduction modes of a Ge/Si core/shell NW. The Ge/Si system has several potential advantages over electron systems such as longer spin coherence time due to weaker coupling to nuclear spins and the possibility of isotope-purified materials for nuclear spin-free devices. We derive the Landé g factor of 3.6 from magneto-transport measurements, comparable to theoretical predictions and significantly larger when compared with that in strongly confined quantum dots. The spin-orbit energy is evaluated as ∼2.1 meV, on par with values in III-V NWs, showing good agreement with previous theoretical predictions and weak antilocalization measurements.

Anisotropic Pauli Spin-Blockade Effect and Spin-Orbit Interaction Field in an InAs Nanowire Double Quantum Dot

We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the double quantum dot is measured and is used to extract the effects of spin-orbit interaction and hyperfine interaction on spin state mixing. At finite magnetic fields, the leakage current arising from the hyperfine interaction can be suppressed, and the spin-orbit interaction dominates spin state mixing. We observe dependence of the leakage current on the applied magnetic field direction and determine the direction of the spin-orbit interaction field. We show that the spin-orbit field lies in a direction perpendicular to the nanowire axis but with a pronounced off-substrate-plane angle. The results are expected to have an important implication in employing InAs nanowires to construct spin-orbit qubits and topological quantum devices.

On-Demand Spin-Orbit Interaction from Which-Layer Tunability in Bilayer Graphene

Spin-orbit interaction (SOI) that is gate-tunable over a broad range is essential to exploiting novel spin phenomena. Achieving this regime has remained elusive because of the weakness of the underlying relativistic coupling and lack of its tunability in solids. Here we outline a general strategy that enables exceptionally high tunability of SOI through creating a which-layer spin-orbit field inhomogeneity in graphene multilayers. An external transverse electric field is applied to shift carriers between the layers with strong and weak SOI. Because graphene layers are separated by subnanometer scales, exceptionally high tunability of SOI can be achieved through a minute carrier displacement. A detailed analysis of the experimentally relevant case of bilayer graphene on a semiconducting transition metal dichalchogenide substrate is presented. In this system, a complete tunability of SOI amounting to its ON/OFF switching can be achieved. New opportunities for spin control are exemplified with electrically driven spin resonance and topological phases with different quantized intrinsic valley Hall conductivities.

On-Chip Optimal Stokes Nanopolarimetry Based on Spin-Orbit Interaction of Light

Full measurement of the polarization of light at the nanoscale is expected to be crucial in many scientific and technological disciplines. Ideally, such measurements will require miniaturized Stokes polarimeters able to determine polarization nondestructively, locally, and in real time. For maximum robustness in measurement, the polarimeters should also operate optimally. Recent approaches making use of plasmonic nanostructures or metasurfaces are not able to fulfill all these requirements simultaneously. Here, we propose and demonstrate a method for subwavelength-footprint Stokes nanopolarimetry based on spin-orbit interaction of light. The method, which basically consists on a subwavelength scatterer coupled to a (set of) multimode waveguide(s), can fully determine the state of polarization satisfying all the previous features. Remarkably, the nanopolarimetry technique can operate optimally (we design a nanopolarimeter whose polarization basis spans 99.7% of the maximum tetrahedron volume inside the Poincaré sphere) over a broad bandwidth. Although here experimentally demonstrated on a silicon chip at telecom wavelengths, spin-orbit interaction-based nanopolarimetry is a universal concept to be applied in any wavelength regime or technological platform.

Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

Transitional metal ditelluride WTe₂ has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe₂. Here, we report a successful synthesis of mono- to few-layer WTe₂ via chemical vapor deposition. Using atomically thin WTe₂ nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe₂ from weak antilocalization to weak localization, revealing a strong electrical field modulation of the spin-orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe₂ as a promising platform for exotic electronic and spintronic device applications.

Spin-Glass-Like Behavior and Topological Hall Effect in SrRuO3/SrIrO3 Superlattices for Oxide Spintronics Applications

The heterostructure interface provides a powerful platform for exploring rich emergent phenomena, such as interfacial superconductivity and nontrivial topological surface states. Here, SrRuO₃/SrIrO₃ superlattices were epitaxially synthesized. The magnetic and magneto-transport properties of these superlattices were characterized. A broad cusp-type splitting in the zero-field-cooling/field-cooling temperature-dependent magnetization and magnetization relaxation, which follows the modified stretched function model, accompanied by double hysteresis magnetization loops were demonstrated. These physical effects were modulated by the SrIrO₃ layer thickness, which confirms the coexistence of interfacial spin glass and ferromagnetic ordering in the superlattices. In addition, the topological Hall effect was observed at low temperatures, and it is weakened with the increase of the SrIrO₃ layer thickness. These results suggest that a noncoplanar spin texture is generated at the SrRuO₃/SrIrO₃ interfaces because of the interfacial Dzyaloshinskii-Moriya interaction. This work demonstrates that SrIrO₃ can effectively induce interfacial Dzyaloshinskii-Moriya interactions in superlattices, which would serve as a mechanism to develop spintronic devices with perovskite oxides.

Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot

In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of interdot level spacing and magnetic field. With varied interdot tunnel coupling, we can identify different dominant spin relaxation mechanisms. Application of a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor ~0.93 and the strength of spin-orbit interaction ~110 μeV can be obtained. The demonstrated strong spin-orbit interaction of heavy holes promises fast local spin manipulation using only electric fields, which is of great interest for quantum information processing.

Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond

Hydrogenated diamond possesses a unique surface conductivity as a result of transfer doping by surface acceptors. Yet, despite being extensively studied for the past two decades, little is known about the system at low temperature, particularly whether a two-dimensional hole gas forms at the diamond surface. Here we report that (100) diamond, when functionalized with hydrogen, supports a p-type spin-3/2 two-dimensional surface conductivity with a spin-orbit interaction of 9.74 ± 0.1 meV through the observation of weak antilocalization effects in magneto-conductivity measurements at low temperature. Fits to 2D localization theory yield a spin relaxation length of 30 ± 1 nm and a spin-relaxation time of ∼ 0.67 ± 0.02 ps. The existence of a 2D system with spin orbit coupling at the surface of a wide band gap insulating material has great potential for future applications in ferromagnet-semiconductor and superconductor-semiconductor devices.