Linear Scaling of the Exciton Binding Energy versus the Band Gap of Two-Dimensional Materials

Prohibiting the electron-phonon coupling effect in tungsten trioxide nanosheet colloid with enhanced photocatalytic antibacterial capacity

The serious combination of abundant electrons/holes in bulk primarily hinders the efficiency in the photocatalytic reaction. It is crucial to control the spatial charge dynamics through delicately designing the crystal configuration of photocatalyst. In this work, a modified tungsten trioxide nanosheet colloid (M-WO3) was synthesized by an ion exchange method. Compared to pristine WO3 (P-WO3), the crystal lattice vibration frequency of M-WO3 increases from 2.8 meV to 4.3 meV, which effectively prohibits electron-phonon coupling and powerfully accelerates the separation and transfer of photoinduced charge carriers. Irradiated by visible-light, M-WO3 shows much higher photocatalytic bacterial inactivation performance than P-WO3. In addition, this regulation method increases the surface charges of the WO3 colloid to improve its stability, which endows this colloid photocatalyst with broad prospects in practical photocatalytic antibacterial applications. This work offers guidance to construct efficiently separated photoinduced electron/hole pairs of the colloid photocatalyst by designing its crystal structure.

Subcycle dynamics of excitons under strong laser fields

Excitons play a key role in the linear optical response of two-dimensional (2D) materials. However, their role in the nonlinear response to intense, nonresonant, low-frequency light is often overlooked as strong fields are expected to tear the electron-hole pair apart. Using high-harmonic generation as a spectroscopic tool, we theoretically study their formation and role in the nonlinear optical response. We show that the excitonic contribution is prominent and that excitons remain stable even when the driving laser field surpasses the strength of the Coulomb field binding the electron-hole pair. We demonstrate a parallel between the behavior of strongly laser-driven excitons in 2D solids and strongly driven Rydberg states in atoms, including the mechanisms of their formation and stability. Last, we show how the excitonic contribution can be singled out by encapsulating the 2D material in a dielectric, tuning the excitonic energy and its contribution to the high-harmonic spectrum.

Mn2C MXene functionalized by oxygen is a semiconducting antiferromagnet and an efficient visible light absorber

Manganese-based MXenes are promising two-dimensional materials due to the broad palette of their magnetic phases and the possibility of experimental preparation because the corresponding MAX phase was already prepared. Here, we systematically investigated geometrical conformers and spin solutions of oxygen-terminated Mn2C MXene and performed subsequent many-body calculations to obtain reliable electronic and optical properties. Allowing energy-lowering using the correct spin ordering via supercell magnetic motifs is essential for the Mn2CO2 system. The stable ground-state Mn2CO2 conformation is antiferromagnetic (AFM) with zigzag lines of up and down spins on Mn atoms. The AFM nature is consistent with the parent MAX phase and even the clean depleted Mn2C sheet. Other magnetic states and geometrical conformations are energetically very close, providing state-switching possibilities in the material. Subsequent many-body GW and Bethe-Salpeter equation (BSE) calculations provide indirect semiconductor characteristics of AFM Mn2CO2 with a fundamental gap of 2.1 eV (and a direct gap of 2.4 eV), the first bright optical transition at 1.3 eV and extremely strongly bound (1.1 eV) first bright exciton. Mn2CO2 absorbs efficiently the whole visible light range and near ultraviolet range (between 10 and 20%).

Reticular Ratchets for Directing Electrochemiluminescence

Electrochemiluminescence (ECL) involves charge transfer between electrochemical redox intermediates to produce an excited state for light emission. Ensuring precise control of charge transfer is essential for decoding ECL fundamentals, yet guidelines on how to achieve this for conventional emitters remain unexplored. Molecular ratchets offer a potential solution, as they enable the directional transfer of energy or chemicals while impeding the reverse movement. Herein, we designed 10 pairs of imine-based covalent organic frameworks as reticular ratchets to delicately manipulate the intrareticular charge transfer for directing ECL transduction from electric and chemical energies. Aligning the donor and acceptor (D-A) directions with the imine dipole effectively facilitates charge migration, whereas reversing the D-A direction impedes it. Notably, the ratchet effect of charge transfer directionality intensified with increasing D-A contrast, resulting in a remarkable 680-fold improvement in the ECL efficiency. Furthermore, dipole-controlled exciton binding energy, electron/hole decay kinetics, and femtosecond transient absorption spectra identified the electron transfer tendency from the N-end toward the C-end of reticular ratchets during ECL transduction. An exponential correlation between the ECL efficiency and the dipole difference was discovered. Our work provides a general approach to manipulate charge transfer and design next-generation electrochemical devices.

Asymmetric Potential Model of Two-Dimensional Imine Covalent Organic Frameworks with Enhanced Quantum Efficiency for Photocatalytic Water Splitting

Two-dimensional (2D) covalent organic frameworks (COFs) assembled using building blocks have been widely employed in photocatalysis due to their customizable optoelectronic characteristics and porous structure, which facilitate charge carrier and mass movement. Nevertheless, the development of COF photocatalysts encounters a continuous obstacle in enhancing the efficiency of photocatalysis, impeded by a limited comprehension of the orbital interaction between molecular fragments and linkers. In this study, we present a model that examines the interaction between molecular fragments in an imine-based COF at the frontier molecular orbital level, enabling us to comprehend the impact of manipulating linkers on light adsorption, exciton efficiency, and catalytic activity. Our findings demonstrate that altering the connecting orientation of 14 R-C=N-R imine linkers in 2D COFs can enhance solar-to-hydrogen (STH) efficiency under visible light from 2.76% to 4.24%. This research has the potential to provide a valuable model for refining photocatalysts with enhanced photocatalytic performance.

Is Dielectric Mismatch Actually Important in 2D Perovskites?

Understanding and controlling exciton properties are important for the design of 2D semiconductors, such as monolayer transition metal dichalcogenides (TMDCs) and 2D halide perovskites (HPs). This paper demonstrates that the widespread strategy used for the exciton engineering of 2D HPs, based on dielectric mismatch, is flawed since dielectric mismatch has very little correlation with exciton properties. For monolayer TMDCs, however, the dielectric mismatch is shown to be more important.

Novel C4P2 monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting

Metal-free two-dimensional (2D) semiconductors have garnered significant attention in the realm of photocatalytic water splitting, primarily owing to their inherent clean, stable, and efficient photoresponsive properties. Motivated by it, we have proposed two types of stable C4P2 monolayers with indirect band gaps, mediocre carrier mobility and excellent optical absorption in visible-light and ultraviolet regions. Although the too-low work function of monolayer α-C4P2 and the too-high work function of monolayer β-C4P2 make them only suitable for single-side redox reaction in photocatalytic water splitting, the creation of an α-C4P2/β-C4P2 Z-scheme heterojunction, combined with the Janus monolayer γ-C4P2 that integrates features of both α and β structures, effectively addresses this limitation, fulfilling the prerequisites for comprehensive photocatalytic water splitting. Furthermore, the calculations indicate that the α-C4P2/β-C4P2 Z-scheme heterojunction and Janus monolayer γ-C4P2 not only demonstrate improved carrier mobility and optical absorption but also feature internal electric fields that effectively enhance driving energy and photo-induced charge separation. Notably, Janus monolayer γ-C4P2 achieves a high electron mobility of ∼105 cm2 V-1 s-1 and an impressive solar-to-hydrogen conversion efficiency of 25.62%.

Tuning of excitons in phosphorene atomic chains

An universal scaling between the exciton binding energy and quasiparticle (QP) band gap was first discovered in two-dimensional (2D) semiconductors such as graphene derivatives, various transition materials dichalcogenides, and black phosphorus (Choiet al2015Phys. Rev. Lett.115066403; Jianget al2017Phys. Rev. Lett.118266401), and later extended to quasi one-dimensional (1D) systems such as carbon nanotubes and graphene nanoribbons. In this work we study the excitonic states in phosphorene atomic chains by using the exact diagonalization method and show that the linear scaling between the exciton binding energy (Ex) and QP shift (Δqs) can be easily tuned by the dielectric environment. In the presence of weak screening,Exis seen to increase withΔqsand exhibits a similar scaling as those 2D materials. As the screening becomes stronger, however, the dependence is found to be reversed, i.e.Exnow decreases whenΔqsincreases. More interestingly, we also reveal thatExmay even become nearly constant, independent on the system dimension andΔqswhen the screening reaches a certain strength. These abnormal scaling relations are attributed to the complex nature of excitons in the strongly correlated 1D system.

Metal-free Janus α- and β-SiCP4: designing stable and efficient two-dimensional semiconductors for water splitting

Two-dimensional (2D) semiconductors exhibit exceptional potential in the field of photocatalytic water splitting due to their unique structural characteristics and photoelectric properties. In this study, based on first-principles density functional theory, we theoretically proposed two SiCP4 Janus 2D semiconductors with high stability, namely monolayer α- and β-SiCP4. By performing the calculation of HSE06 functionals, the band structures of monolayer α- and β-SiCP4 have been estimated, and the results show that both α- and β-SiCP4 are direct-band-gap semiconductors with band gaps of 1.64 eV and 1.91 eV, respectively. Meanwhile, the band edge levels of monolayer α- and β-SiCP4 meet the band structure requirements of photocatalysts in water splitting. Notably, because of the internal build-in electric fields and tiny band gaps, monolayer α- and β-SiCP4 exhibit separated photogenerated electron-hole pairs and high solar-to-hydrogen (STH) efficiency, reaching up to 33.68% and 23.72%, respectively. Additionally, we also investigate the impact of uniaxial strain on electronic, optical and photocatalytic properties of monolayer α- and β-SiCP4 considering pH values ranging from 0 to 14. Our results demonstrate that the maximum STH efficiency for α-SiCP4 is achieved under X-direction strain (η) of 2%, Y-direction strain (η) of 8%, and pH values between 2 and 4. Conversely, β-SiCP4 exhibits the highest STH efficiency under X-direction strain (η) of 8%, Y-direction strain (η) of 6%, and pH values between 2 and 4.

First-principles study on the electronic and optical properties of AlSb monolayer

Using density functional theory and many-body perturbation theory, we systematically investigate the optoelectronic properties of AlSb monolayer, which has been recently synthesized by molecular beam epitaxy [ACS Nano 2021, 15, 5, 8184-8191]. After confirming the dynamical stability of the monolayer, we analyze its electronic properties at different levels of theory without (PBE, HSE03, HSE06) and with (G[Formula: see text]W[Formula: see text], GW[Formula: see text], and GW) electron-electron interaction. The results show that AlSb monolayer is a semiconductor with a direct quasiparticle band gap of 1.35 eV while its electronic structure is dominated by spin-orbit coupling. Also, we study the optical properties of the monolayer by solving the Bethe-Salpeter equation. In this regard, the effects of spin-orbit coupling, electron-electron correlation, and electron-hole interaction on the optical spectrum of the monolayer are evaluated. Based on the highest level of theory, the first bright exciton is found to be located at 0.97 eV, in excellent agreement with the experimental value (0.93 eV). Moreover, the exciton binding energy, effective mass, and Bohr radius are obtained 0.38 eV, 0.25 m[Formula: see text], and 6.31 Å, respectively. This work provides a better understanding of the electronic, optical, and excitonic properties of AlSb monolayer and may shed light on its potential applications.

Improving X-ray Scintillating Merits of Zero-Dimensional Organic-Manganese(II) Halide Hybrids via Enhancing the Ligand Polarizability for High-Resolution Imaging

Luminescent metal halides have been exploited as a new class of X-ray scintillators for security checks, nondestructive inspection, and medical imaging. However, the charge traps and hydrolysis vulnerability are always detrimental to the three-dimensional ionic structural scintillators. Here, the two zero-dimensional organic-manganese(II) halide coordination complexes 1-Cl and 2-Br were synthesized for improvements in X-ray scintillation. The introduction of a polarized phosphine oxide can help to increase the stabilities, especially the self-absorption-free merits of these Mn-based hybrids. The X-ray dosage rate detection limits reached up to 3.90 and 0.81 μGyair/s for 1-Cl and 2-Br, respectively, superior to the medical diagnostic standard of 5.50 μGyair/s. The fabricated scintillation films were applied to radioactive imaging with high spatial resolutions of 8.0 and 10.0 lp/mm, respectively, holding promise for use in diagnostic X-ray medical imaging.

A Unified View of Vibrational Spectroscopy Simulation through Kernel Density Estimations

To date, vibrational simulation results constitute more of an experimental support than a predictive tool, as the simulated vibrational modes are discrete due to quantization. This is different from what is obtained experimentally. Here, we propose a way to combine outputs such as the phonon density of states surrogate and peak intensities obtained from ab initio simulations to allow comparison with experimental data by using machine learning. This work is paving the way for using simulated vibrational spectra as a tool to identify materials with defined stoichiometry, enabling the separation of genuine vibrational features of pure phases from morphological and defect-induced signals.

Solar cells based on 2D Janus group-III chalcogenide van der Waals heterostructures

Janus monolayers, realized by breaking the vertical structural symmetry of two-dimensional (2D) materials, pave the way for a new era of high-quality and high-performance atomically-thin vertical p-n heterojunction solar cells. Herein, employing first-principles computations, Janus group-III chalcogenide monolayers, MX, M₂XY, MM'X₂ and MM'XY (M, M' = Ga, In; X, Y = S, Se, Te), are deeply investigated in view of their implementation in 2D photovoltaic systems. Their stability analysis reveals that the 21 investigated monolayers are energetically, thermodynamically, mechanically, dynamically, and thermally stable, confirming their growth feasibility under ambient conditions. Furthermore, owing to their optimal band gap, high charge carrier mobilities, and strong light absorption, 2D Janus group-III monolayers are predicted as promising candidates for 2D excitonic solar cell applications. In fact, 46 type-II van der Waals (vdW) heterostructures with a lattice mismatch of less than 5% are identified by analyzing the band alignments of the investigated monolayers obtained through the HSE + SOC approach. In particular, 7 vertical vdW heterojunctions with a power conversion efficiency (PCE) higher than 20% are predicted and might be the focus of future experimental and theoretical studies. To further confirm the type II band alignment, the Ga₂STe-GaInS₂ vdW heterostructure, which reveals the highest PCE of 23.69%, is thoroughly investigated. Our results not only predict and evaluate stable 2D Janus group-III chalcogenide monolayers and vdW heterostructures, but also suggest that they could be used as materials for next-generation optoelectronic and photovoltaic devices.

Layered Semiconductor Cr0.32Ga0.68Te2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate

The valleytronic state found in group-VI transition-metal dichalcogenides such as MoS2 has attracted immense interest since its valley degree of freedom could be used as an information carrier. However, valleytronic applications require spontaneous valley polarization. Such an electronic state is predicted to be accessible in a new ferroic family of materials, i.e., ferrovalley materials, which features the coexistence of spontaneous spin and valley polarization. Although many atomic monolayer materials with hexagonal lattices have been predicted to be ferrovalley materials, no bulk ferrovalley material candidates have been reported or proposed. Here, we show that a new non-centrosymmetric van der Waals (vdW) semiconductor Cr0.32Ga0.68Te2.33, with intrinsic ferromagnetism, is a possible candidate for bulk ferrovalley material. This material exhibits several remarkable characteristics: (i) it forms a natural heterostructure between vdW gaps, a quasi-two-dimensional (2D) semiconducting Te layer with a honeycomb lattice stacked on the 2D ferromagnetic slab comprised of the (Cr, Ga)-Te layers, and (ii) the 2D Te honeycomb lattice yields a valley-like electronic structure near the Fermi level, which, in combination with inversion symmetry breaking, ferromagnetism, and strong spin-orbit coupling contributed by heavy Te element, creates a possible bulk spin-valley locked electronic state with valley polarization as suggested by our DFT calculations. Further, this material can also be easily exfoliated to 2D atomically thin layers. Therefore, this material offers a unique platform to explore the physics of valleytronic states with spontaneous spin and valley polarization in both bulk and 2D atomic crystals.

Benchmarking fundamental gap of Sc2C(OH)2 MXene by many-body methods

Sc₂C(OH)₂ is a prototypical non-magnetic member of MXenes, a promising transition-metal-based 2D material family, with a direct bandgap. We provide here a benchmark of its fundamental gap Δ obtained from many-body GW and fixed-node diffusion Monte Carlo methods. Both approaches independently arrive at a similar value of Δ ∼ 1.3 eV, suggesting the validity of both methods. Such a bandgap makes Sc₂C(OH)₂ a 2D semiconductor suitable for optoelectronic applications. The absorbance spectra and the first exciton binding energy (0.63 eV), based on the Bethe-Salpeter equation, are presented as well. The reported results may serve to delineate experimental uncertainties and enable selection of reasonable approximations such as density functional theory functionals, for use in modeling of related MXenes.

Sumanene Monolayer of Pure Carbon: A Two-Dimensional Kagome-Analogy Lattice with Desirable Band Gap, Ultrahigh Carrier Mobility, and Strong Exciton Binding Energy

The design and synthesis of novel two-dimensional (2D) materials that possess robust structural stability and unusual physical properties may open up enormous opportunities for device and engineering applications. Herein, a 2D sumanene lattice that can be regarded as a derivative of the conventional Kagome lattice is proposed. The tight-binding analysis demonstrates sumanene lattice contains two sets of Dirac cones and two sets of flat bands near the Fermi surface, distinctively different from the Kagome lattice. Using first-principles calculations, two possible routines for the realization of stable 2D sumanene monolayers (named α phase and β phase) are theoretically suggested, and an α-sumanene monolayer can be experimentally synthesized with chemical vapor deposition using C₂₁ H₁₂ as a precursor. Small binding energies on Au(111) surface (e.g., -37.86 eV Å^-2 for α phase) signify the possibility of their peel-off after growing on the noble metal substrate. Importantly, the GW plus Bethe-Salpeter equation calculations demonstrate both monolayers have moderate band gaps (1.94 eV for α) and ultrahigh carrier mobilities (3.4 × 10⁴ cm²  V^-1  s^-1 for α). In particular, the α-sumanene monolayer possesses a strong exciton binding energy of 0.73 eV, suggesting potential applications in optics.

Versatile Gold Telluride Iodide Monolayer as a Potential Photocatalyst for Water Splitting

Two-dimensional materials promise great potential for photochemical water splitting due to the abundant active sites and large surface area, but few of the known materials meet the rigorous requirements. In this work, we systematically investigate structural, electronic, and optical properties of an experimentally unexplored 2D material, i.e., gold telluride iodide (AuTeI) monolayer using density functional theory and Bethe-Salpeter equation approaches. Bulk AuTeI is a layered material and was realized in experiments a few decades ago. However, its bandgap is relatively small for water splitting. We find the exfoliation of monolayer AuTeI from the bulk phase is highly favorable, and 2D AuTeI is dynamically stable. The bandgap of 2D AuTeI becomes larger due to the quantum confinement effect. Importantly, the edge positions of the conduction band minimum and valence band maximum of 2D AuTeI perfectly fit the water oxidation and reduction potentials, enabling it a promising photocatalyst for water splitting. Additionally, the exciton binding energy of 2D AuTeI is calculated to be 0.35 eV, suggesting efficient electron-hole separation. Our results highlight a new and experimentally accessible 2D material for potential application in photocatalytic water splitting.

Two-dimensional InSb/GaAs- and InSb/InP-based tandem photovoltaic device with matched bandgap

The past several years have witnessed remarkable research efforts to develop high-performance photovoltaics (PVs), to curtail the energy crisis by avoiding dependence on traditional fossil fuels. In this regard, there is an urgent need to accelerate research progress on new low-dimensional semiconductors with superior electronic and optical properties. Herein, combining abundant related PV experimental data in the literature and our systematic theoretical calculations, we propose two-dimensional (2D) InSb/GaAs and InSb/InP-based tandem PVs with high solar-to-electric efficiency up to near 30.0%. Firstly, according to first-principles calculations, the stability, electronic and optical properties of single-layer group-III-V materials (XY, X = Ga and In, Y = N, P, As, Sb, and Bi) are systematically introduced. Next, due to the high bandgap (E_g) of GaAs and InP being a perfect match with the low E_g of InSb, InSb/GaAs- and InSb/InP-based tandem PVs are constructed. In addition, the complementary absorption spectra of these two subcells can facilitate the achievement of high tandem power conversion efficiency. Furthermore, we have analyzed in detail the influencing factors for PCE and the physical mechanism of the optimized match between the top and bottom subcells in the tandem configurations. Our designed 2D-semiconductor-based PVs can be expected to bring a new perspective for future commercialized high-efficiency energy devices.

Intervalley Excitonic Hybridization, Optical Selection Rules, and Imperfect Circular Dichroism in Monolayer h-BN

We perform first-principles GW plus Bethe-Salpeter equation calculations to investigate the photophysics of monolayer hexagonal boron nitride (h-BN), revealing excitons with novel k-space characteristics. The excitonic states forming the first and third peaks in its absorption spectrum are s-like, but those of the second peak are notably p-like, a first finding of strong co-occurrence of bright s-like and bright p-like states in an intrinsic 2D material. Moreover, even though the k-space wave function of these excitonic states are centered at the K and K^{'} valleys as in monolayer transition metal dichalcogenides, the k-space envelope functions of the basis excitons at one valley have significant extents to the basin of the other valley. As a consequence, the optical response of monolayer h-BN exhibits a lack of circular dichroism, as well as a coupling that induces an intervalley mixing between s- and p-like states.

Laser-induced crystal growth observed in CsPbBr3 perovskite nanoplatelets

Benefiting from the easily adjustable optical properties of perovskite, CsPbBr3 nanocrystals (NCs) are considered to be able to show their advantages in the field of display. Here, we report that...

The electronic and optical properties of III–V binary 2D semiconductors: how to achieve high precision from accurate many-body methods

We tested the precision of accurate many-body GW and BSE methods on seven hexagonal 2D III–V binary semiconductors (BN, BP, BAs, AlN, GaN, GaP, and GaAs), and we provided benchmark electronic and optical properties.

Large exciton binding energy, superior mechanical flexibility, and ultra-low lattice thermal conductivity in BiI3monolayer

The exciton binding energy, mechanical properties, and lattice thermal conductivity of monolayer BiI₃are investigated on the basis of first principle calculation. The excitation energy of monolayer BiI₃is predicted to be 1.02 eV, which is larger than that of bulk BiI₃(0.224 eV). This condition is due to the reduced dielectric screening in systems. The monolayer can withstand biaxial tensile strain up to 30% with ideal tensile strength of 2.60 GPa. Compared with graphene and MoS₂, BiI₃possesses superior flexibility and ductility due to its large Poisson's ratio and smaller Young's modulus by two orders of magnitude. The predicted lattice thermal conductivityk_Lof monolayer BiI₃is 0.247 W m^-1 K^-1at room temperature, which is lower than most reported values for other 2D materials. Such ultralowk_Lresults from the scattering between acoustic and optical phonon modes, heavy atomic mass, and relatively weak chemical bond.

High Anisotropic Optoelectronics in Two Dimensional Layered PbSnX2 (X = S/Se)

We systematically study the giant anisotropic optoelectronics in layered PbSnX₂ (X = S/Se). The highly anisotropic optoelectronics mainly originates from the asymmetric sublattices SnX, resulting in the anisotropy of photoelectronic properties with fascinating visible light absorption range in single-layer and bilayer PbSnX₂. We employ uniaxial strain in both the x and y directions and find an indirect-to-direct band gap transition, while the quasiparticle indirect band gap presents excellent linear scaling with biaxial strain in monolayer PbSnX₂. We also demonstrate ultrahigh anisotropic mobilities of electrons (μ_y > μ_x) and holes (μ_x > μ_y) in both single-layer and bilayer PbSnX₂ (X = S/Se), and spin-orbit coupling effects and the increase of layer number significantly reduce exciton binding energies and band gaps. Finally, the strong layer dependence of the band structure is clearly seen when the film thickness is less than 4 layers. Our results provide a fundamental understanding of highly anisotropic PbSnX₂ (X = S/Se) and show two potential candidates in photoelectric applications.

Vibrational and optical identification of GeO2 and GeO single layers: a first-principles study

In the present work, the identification of two hexagonal phases of germanium oxides (namely GeO₂ and GeO) through the vibrational and optical properties is reported using density functional theory calculations. While structural optimizations show that single-layer GeO₂ and GeO crystallize in 1T and buckled phases, phonon band dispersions reveal the dynamical stability of each structure. First-order off-resonant Raman spectral predictions demonstrate that each free-standing single-layer possesses characteristic peaks that are representative for the identification of the germanium oxide phase. On the other hand, electronic band dispersion analysis shows the insulating and large-gap semiconducting nature of single-layer GeO₂ and GeO, respectively. Moreover, optical absorption, reflectance, and transmittance spectra obtained by means of G₀W₀-BSE calculations reveal the existence of tightly bound excitons in each phase, displaying strong optical absorption. Furthermore, the excitonic gaps are found to be at deep UV and visible portions of the spectrum, for GeO₂ and GeO crystals, with energies of 6.24 and 3.10 eV, respectively. In addition, at the prominent excitonic resonances, single-layers display high reflectivity with a zero transmittance, which is another indication of the strong light-matter interaction inside the crystal medium.

Electronic and Optical Properties of van der Waals Heterostructures Based on Two-Dimensional Perovskite (PEA)2PbI4 and Black Phosphorus

Combining two-dimensional (2D) perovskites with other 2D materials to form a van der Waals (vdW) heterostructure has emerged as an intriguing way of designing electronic and optoelectronic devices. The structural, electronic, and optical properties of the 2D (PEA)2PbI4/black phosphorus (BP) [PEA:(C4H9NH3)+] vdW heterostructure have been investigated using first-principles calculations. We found that the (PEA)2PbI4/BP heterostructure shows a high stability at room temperature. It is demonstrated that the (PEA)2PbI4/BP heterostructure exhibits a type-I band arrangement with high carrier mobility. Moreover, the band gap and band offset of (PEA)2PbI4/BP can be effectively modulated by an external electric field, and a transition from semiconductor to metal is observed. The band edges of (PEA)2PbI4 and BP in the (PEA)2PbI4/BP heterostructure, which show significant changes with the external electric field, provide further support. Furthermore, the BP layers can enhance the light absorption of the (PEA)2PbI4/BP heterostructures. Our results indicate that the 2D perovskite and BP vdW heterostructures are competitive candidates for the application of low-dimensional photovoltaic and optoelectronic devices.

Substrate effect on excitonic shift and radiative lifetime of two-dimensional materials

Substrates have strong effects on optoelectronic properties of two-dimensional (2D) materials, which have emerged as promising platforms for exotic physical phenomena and outstanding applications. To reliably interpret experimental results and predict such effects at 2D interfaces, theoretical methods accurately describing electron correlation and electron-hole interaction such as first-principles many-body perturbation theory are necessary. In our previous work (2020Phys. Rev. B102205113), we developed the reciprocal-space linear interpolation method that can take into account the effects of substrate screening for arbitrarily lattice-mismatched interfaces at the GW level of approximation. In this work, we apply this method to examine the substrate effect on excitonic excitation and recombination of 2D materials by solving the Bethe-Salpeter equation. We predict the nonrigid shift of 1s and 2s excitonic peaks due to substrate screening, in excellent agreements with experiments. We then reveal its underlying physical mechanism through 2D hydrogen model and the linear relation between quasiparticle gaps and exciton binding energies when varying the substrate screening. At the end, we calculate the exciton radiative lifetime of monolayer hexagonal boron nitride with various substrates at zero and room temperature, as well as the one of WS₂where we obtain good agreement with experimental lifetime. Our work answers important questions of substrate effects on excitonic properties of 2D interfaces.

Ultrafast Excited-State Localization in Cs2AgBiBr6 Double Perovskite

Cs2AgBiBr6 is a promising metal halide double perovskite offering the possibility of efficient photovoltaic devices based on lead-free materials. Here, we report on the evolution of photoexcited charge carriers in Cs2AgBiBr6 using a combination of temperature-dependent photoluminescence, absorption and optical pump-terahertz probe spectroscopy. We observe rapid decays in terahertz photoconductivity transients that reveal an ultrafast, barrier-free localization of free carriers on the time scale of 1.0 ps to an intrinsic small polaronic state. While the initially photogenerated delocalized charge carriers show bandlike transport, the self-trapped, small polaronic state exhibits temperature-activated mobilities, allowing the mobilities of both to still exceed 1 cm2 V-1 s-1 at room temperature. Self-trapped charge carriers subsequently diffuse to color centers, causing broad emission that is strongly red-shifted from a direct band edge whose band gap and associated exciton binding energy shrink with increasing temperature in a correlated manner. Overall, our observations suggest that strong electron-phonon coupling in this material induces rapid charge-carrier localization.

Electronic and optical properties of fluorinated graphene within many-body Green's function framework

In this article, a systematic examination of the electronic and optical properties of partially fluorinated graphene is presented. In order to capture a large variety of fluorination degrees and configurations, different sizes of the supercell combining with various degrees of fluorination are considered. On top of periodic density functional theory, the G₀W₀ method and the G₀W₀Γ method within many-body Green's function framework are employed. Including the description of electron-hole interactions, the optical spectra based on the Bethe-Salpeter equation are calculated. Two-sided fluorination with compact fluorination arrangements is energetically most favorable. The fluorination degree has a determined impact on the bandgap value in the system, while the fluorination pattern strongly influences the characteristics of the bands in the electronic structures. Depending on the polarization of the applied electromagnetic field, the optical absorption spectra of the same structure could vary significantly. These interesting results suggest the potential applications of partially fluorinated graphene as optoelectronic materials.

Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications

The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.

High mobility and enhanced photoelectric performance of two-dimensional ternary compounds NaCuX (X = S, Se, and Te)

Monolayer ternary materials NaCuX (X = S, Se, and Te) show high mobilities and strong optical absorption in the visible region.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Two-Dimensional Gold Halides: Novel Semiconductors with Giant Spin-Orbit Splitting and Tunable Optoelectronic Properties

We introduce a new family of 2D materials with unique structure and optoelectronic properties, namely, single-layer gold(I) halides (AuHals). We propose their stability as well as structural, electronic, and optical properties using first-principles calculations. The cleavage energy is found to be similar to that of graphene from graphite, indicating the possibility for mechanical exfoliation. We show that AuHals are stable and have tunable direct (AuBr) and indirect (AuI) band gaps depending on the number of layers. We discuss the possible origin of the giant spin-orbit coupling (SOC) induced conduction band splitting in terms of orbital-decomposed band structure to guide future investigations on the design of materials with highly effective SOC. Exceptionally high excitonic binding energy, high hole mobility, and tunable band gaps indicate that AuHals are promising candidates for optoelectronic devices with excellent performance.

Impact of uniaxial strain on the electronic and transport properties of monolayer α-GeTe

Density functional theory calculations are performed to explore the electronic and transport properties of monolayer α-GeTe under uniaxial strain. It is found that monolayer α-GeTe has an indirect band gap of 1.75 eV and exhibits worthwhile anisotropy along with high electron mobility. The electron mobilities reach 1974 cm² · V^-1 · s^-1 and 1442 cm² · V^-1 · s^-1 along the zigzag and armchair directions, respectively. When uniaxial strain is applied, our results show an appreciable strain sensitivity of electron mobility. The electron mobility dramatically increases by an order of magnitude around a special strain due to the shifts of conduction band minimum. In addition, we also construct a double gate tunneling field effect transistor (TFET) with a channel of monolayer α-GeTe. The steeper sub-threshold swing and higher ON/OFF ratio are observed by applying tensile strain to the channel. As a result, it indicates that the appropriate strain can significantly improve the performance of α-GeTe TFETs.

Me-graphene: a graphene allotrope with near zero Poisson's ratio, sizeable band gap, and high carrier mobility

The exploration of new two-dimensional (2D) allotropes of carbon has attracted great research attention after graphene, but experiment-feasible graphene allotropes with novel properties are still rare. Here, we predict a new allotrope of graphene, named Me-graphene, composed of both sp2- and sp3-hybridized carbon by topological assembly of C-(C3H2)4 molecules. With a transitional ratio of sp2- and sp3-hybridized carbon atoms (12 : 1) between those of graphene (1 : 0) and penta-graphene (2 : 1), Me-graphene has transition properties between those of graphene and penta-graphene, such as energy, band gap, and Poisson's ratio. Unusually, Me-graphene exhibits a near zero Poisson's ratio of from -0.002 to 0.009 in the xy-plane (or called "anepirretic"), different from that of graphene (0.169) and penta-graphene (-0.068). More importantly, the near zero Poisson's ratio behavior remains in a large strain range, being less than ±0.02 for strain from -15% to +3%. Me-graphene possesses an indirect band gap of 2.04 eV, as a transition of graphene (semimetal) and penta-graphene (wide band gap), and turns into a direct-bandgap semiconductor with an enlarged band gap of 2.62 eV under compressive strain. It possesses high hole mobility of 1.60 × 105 cm2 V-1 s-1 at 300 K. Me-Graphene has potential applications in electronic, photoelectric and high-speed mechatronic devices. The transitional properties related to the ratio of sp2- and sp3-hybridized carbon atoms are inspiring for searching for new graphene allotropes with combinational properties.

Computational studies on triphenyldiyne as a two-dimensional visible-light-driven photocatalyst for overall water splitting

The high carrier mobility, porous configurations and tunable electronic structures of two-dimensional (2D) carbon materials hold great promise in energy conversion and storage. However, few of them are capable of photocatalytic overall water splitting. Here, by means of first-principles calculations within the quasi-particle approximation and the Bethe-Salpeter equation, we demonstrated a unique framework of triphenylenes (sp2) and acetylenic linkages (sp), namely triphenyldiyne (TDY) that has the electronic band structure suitable for photocatalytic overall water splitting along with pronounced optical absorbance in visible light. The redox ability of its photogenerated electrons is high enough to drive the hydrogen evolution reaction (HER). Through Ni doping with TDY, its overpotential for the oxygen evolution reaction (OER) can be reduced to match the redox ability of its photogenerated holes, enabling the photocatalytic overall water splitting in sunlight without the need of sacrificial reagents. This work offers not only a low-cost, earth-abundant and environmental-friendly photocatalyst, but also a promising strategy for designing highly efficient photocatalysts for overall water splitting.

Low-Dimensional Semiconductors in Artificial Photosynthesis: An Outlook for the Interactions between Particles/Quasiparticles

By virtue of their intriguing electronic structures and excellent surface properties, low-dimensional semiconductors hold great promise in the field of solar-driven artificial photosynthesis. However, owing to promoted structural confinement and reduced Coulomb screening, remarkable interactions between particles/quasiparticles, including electrons, holes, phonons, and excitons, can be expected in low-dimensional semiconductors, which endow the systems with distinctive excited-state properties that are distinctly different from those in the bulk counterparts. Consequently, these interactions determine not only the mechanisms but also quantum yields of photosynthetic energy utilization. In this Outlook, we review recent advances in studying the unique interactions in low-dimensional semiconductor-based photocatalysts. By highlighting the relevance of different interactions to excited-state properties, we describe the impacts of the interactions on photosynthetic energy conversion. Furthermore, we summarize the regulation of these interactions for gaining optimized photosynthetic behaviors, where the relationships between these interactions and structural factors/external fields are elaborated. Additionally, the challenges and opportunities in studying the interaction-related photosynthesis are discussed.

Large excitonic effect on van der Waals interaction between two-dimensional semiconductors

An exceptionally large excitonic effect on the van der Waals (vdW) interaction between two-dimensional semiconductors is unraveled using the Lifshitz theory in conjunction with the ab initio GW plus Bethe-Salpeter equation formalism. Upon consideration of the electron-hole interaction, the vdW energy between two atomistic layers separated by 10 000 angstroms can be larger by a ratio of ∼30%, which is an order of magnitude greater than that seen for semi-infinite silicon surfaces. The large influence of the short-range electron-hole interaction on the long-range effect of quantum fluctuations is rooted in the ultra-thin nature of two-dimensional semiconductors which results in not only large exciton binding energy but also amplified roles of low-frequency dielectric responses.

Abnormal scaling of excitons in phosphorene quantum dots

Excitonic states of a many-electron system in phosphorene quantum dots (PQDs) are investigated theoretically by using a configuration interaction approach. For a triangular PQD in various dielectric environments, its exciton is found to obey two distinct scaling rules. When there is a strong screening effect present in the nanodot, the exciton binding energy (Δex) is shown to be around -150 meV as the long-range Coulomb interactions are totally suppressed and it increases to about 100 meV when the effective dielectric constant (εr) decreases to 12.5. Over this range of εr, Δex is found to be well fitted into a quadratic form of εr-1, which scales neither linearly with εr-2 like the case of bulk three-dimensional semiconductors nor linearly with εr-1 like the case previously reported for graphene nanostructures. When εr is reduced below 10.0, however, Δex is shown to exhibit a perfect linear relationship with εr-1, which behaves just like that of a two-dimensional graphene sheet. On the other hand, with the reduced εr, the quasiparticle gap is found to decrease instead of increasing like in most of the semiconductor nanostructures. As a result, it is revealed that the relationship of Δex with the quasi-particle gap deviates largely from the linear one previously reported for graphene and many other two-dimensional materials.

Two-Dimensional Li-Based Ternary Chalcogenides for Photocatalysis

Motivated by fundamental interest and practical applications, the investigations of two-dimensional photocatalysts are fascinating subjects in clean energy. Herein, we propose that two-dimensional Li-based ternary chalcogenides LiXY₂ (X = Al, Ga, In; Y = S, Se, Te) have intrinsic polarization and direct band gaps. Our results show that LiXY₂ materials possess optical absorption spectra covering the visible and ultraviolet range. We show that these materials possess extremely high electron mobility (∼10³ cm² V^-1 s^-1), providing great potential in overall water splitting. Furthermore, LiAlS₂ and LiGaS₂ can facilitate overall water splitting regardless of their energy gaps because of the large differences of surface electronic potentials of LiXY₂. Importantly, it is feasible to exfoliate the layered LiAlTe₂ from its bulk counterpart in experiments. Our findings open an exotic pathway to realizing promising photocatalytic applications in two-dimensional ternary materials.

Phillips-Inspired Machine Learning for Band Gap and Exciton Binding Energy Prediction

In this work, inspired by Phillips's ionicity theory in solid-state physics, we directly sort out the critical factors of the band gap's feature correlations in the machine learning architected with the Lasso algorithm. Even based on a small 2D materials data set, we can fundamentally approach an accurate and rational model about the band gap and exciton binding energy with robust transferability to other databases. Our machine learning outputs can reveal the exact physics pictures behind the predicted quantity as well as the "secondary understanding" of the correlation between the approximated physics models in exciton. This work stresses the significant value of physics endorsement on the machine learning (ML) algorithm and provides a symbolic regression solution for the "few-shot" training scheme for ML technology in materials science. Moreover, physics-inspired secondary understanding could be an essential supplement for ML in scientific research fields.

Hubbard excitons in two-dimensional nanomaterials

Excitons in two-dimensional nanomaterials are studied by solving the many-electron Hamiltonian with a configuration-interaction approach. It is shown that graphene or phosphorene nanoflakes can not accommodate any excitonic bound states if the long-range Coulomb interaction is suppressed when the systems are placed in a high-k dielectric environment or on a metal substrate. Hence it is revealed that an electron-hole pair created by an optical excitation does not always form an exciton even in a confined nanostructure. The negative exciton binding energy is found to exhibit distinct dependence on the strength of short-range Coulomb interaction as the system undergoes a phase transition from non-magnetic to anti-ferromagnetic. It is further shown that the electron-hole pair may form an exciton state only when the long-range Coulomb interaction is recovered in the nanoflakes.

New Family of Two-Dimensional Ternary Photoelectric Materials

Screening unique two-dimensional (2D) materials with high mobility and applicable band gaps is motivated by not only the interest in basic science but also the practical applications for photoelectric materials. In this work, we have systematically studied a new family of 2D ternary quintuple layers (QLs), named ABC (A = Na, K, and Rb; B = Cu, Ag, and Au; C = S, Se, and Te). Our results indicate that the QLs of KCuTe, KAgS, KAgSe, KAuTe, RbCuTe, RbAgSe, and RbAgTe host direct band gaps. Moreover, KCuTe, RbCuTe, and RbAgTe QLs show extremely high mobilities of ∼10⁴ cm² V^-1 s^-1. Interestingly, the linear scaling between exciton binding energy and quasiparticle band gap for ABC QLs exhibits an unexpected deviation with the 1/4 law. In addition, KAgSe, KAgS, RbAgSe, and RbAgTe show outstanding power energy conversion efficiencies of up to 21.5%, suggesting that they are good potential donor materials. Our results provide many potential candidates for applications in photoelectric materials, which may be realized in experiments due to the possible exfoliation from their parent compounds.

P3Cl2: A Unique Post-Phosphorene 2D Material with Superior Properties against Oxidation

Herein, a unique class of post-phosphorene materials, namely, phosphorene halogenides (e.g., α-P₃Cl₂) with superior oxidation resistance and desirable bandgap characteristics, are proposed. Our first-principles computations show that monolayer α-P₃Cl₂ is a direct semiconductor with a wide bandgap of 2.41 eV (HSE06) or 4.02 eV (G₀W₀), while the bandgap exhibits only slight reduction with increasing number of layers. The monolayer α-P₃Cl₂ also possesses highly anisotropic carrier mobility, with both ultrahigh electron mobility (56 890 cm² V^-1 s^-1) and hole mobility (26 450 cm² V^-1 s^-1). Meanwhile, the outstanding optical properties and favorable band alignment of 2D P₃Cl₂ suggest its potential as a photocatalyst for visible-light water splitting. 2D α-P₃X₂ (X = F, Br, I) also exhibit good oxidation resistance and possess wide direct bandgaps ranging from 2.16 to 2.43 eV (HSE06). These unique electronic and optical properties render 2D phosphorene halogenide as promising functional materials for broad applications in electronic and optoelectronic devices.

Intrinsic Electric Fields in Two-dimensional Materials Boost the Solar-to-Hydrogen Efficiency for Photocatalytic Water Splitting

Two-dimensional (2D) materials with the vertical intrinsic electric fields show great promise in inhibiting the recombination of photogenerated carriers and widening light absorption region for the photocatalytic applications. For the first time, we investigated the potential feasibility of the experimentally attainable 2D M₂X₃ (M = Al, Ga, In; X = S, Se, Te) family featuring out-of-plane ferroelectricity used in photocatalytic water splitting. By using first-principles calculations, all the nine members of 2D M₂X₃ are verified to be available photocatalysts for overall water splitting. The predicted solar-to-hydrogen efficiency of Al₂Te₃, Ga₂Se₃, Ga₂Te₃, In₂S₃, In₂Se₃, and In₂Te₃ are larger than 10%. Excitingly, In₂Te₃ is manifested to be an infrared-light driven photocatalyst, and its solar-to-hydrogen efficiency limit using the full solar spectrum even reaches up to 32.1%, which breaks the conventional theoretical efficiency limit.

High-Throughput Computational Screening of Vertical 2D van der Waals Heterostructures for High-efficiency Excitonic Solar Cells

As an effort to identify van der Waals heterostructures for efficient excitonic solar cell application, high-throughput computational screening was carried out to study the band alignments of 1540 vertical heterostructures formed by 56 two-dimensional semiconducting/insulating materials. More than 90 heterostructures with estimated power conversion efficiency (PCE) higher than 15% have been identified, of which 17 heterostructures are predicted to have PCE higher than the best value (20%) reported or proposed in the literature.

Room-temperature excitonic emission with a phonon replica from graphene nanosheets deposited on Ni-nanocrystallites/Si-nanoporous pillar array

Graphene nanosheets (GNSs) were grown on a Si nanoporous pillar array (Si-NPA) via chemical vapour deposition, using a thin layer of pre-deposited Ni nanocrystallites as catalyst. GNSs were determined to be of high quality and good dispersivity, with a typical diameter size of 15 × 8 nm. Light absorption measurements showed that GNSs had an absorption band edge at 3.3 eV. They also showed sharp and regular excitonic emitting peaks in the ultraviolet and visible region (2.06-3.6 eV). Moreover, phonon replicas with long-term stability appeared with the excitonic peaks at room temperature. Temperature-dependent photoluminescence from the GNSs revealed that the excitonic emission derived from free and bound excitonic recombination. A physical model based on band energy theory was constructed to analyse the carrier transport of GNSs. The Ni nanocrystallites on Si-NPA, which acted as a metal-enhanced fluorescence substrate, were supposed to accelerate the excitonic recombination of GNSs and enhanced the measured emission intensity. Results of this study would be valuable in determining the luminescence mechanism of GNSs and could be applied in real-world optoelectronic devices.