Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides

Magnetoelectric tuning of spin, valley, and layer-resolved anomalous Nernst effect in transition-metal dichalcogenides bilayers

The anomalous Nernst coefficient (ANC) for transition-metal dichalcogenide (TMD) bilayers is studied with a focus on the interplay between layer pseudospin, spin, and valley degrees of freedom when electric and exchange fields are present. Breaking the inversion and time reversal symmetries via respectively electric and exchange fields results for bilayer TMDs in a spin-valley-layer polarized total ANC. Conditions are determined for controlling the spin, valley, and layer-resolved contributions via electric field tuning. Our results demonstrate the control of layer degree of freedom in bilayer TMDs magnetoelectrically which is of relevance for possible applications in spin/valley caloritronics.

Identification of spin effects in the anomalous Righi-Leduc effect in ferromagnetic metals

The emerging of spin caloritronics leads to a series of new spin-thermal related effects, such as spin Seebeck effect (SSE), spin Nernst effect (SNE) and their corresponding inverse effects. Anomalous Righi–Leduc effect (ARLE) describes that a transverse temperature gradient can be induced by a longitudinal heat flow in ferromagnets. The driving force and the response of the ARLE are all involved with heat. It is curious if spin effects mediate the heat transport and provide extra influence. In this work, we investigate the ARLE and the interplay between the heat current, charge current, and spin current via linear response theory. We identified that spin effects do have clear roles in heat transport, which can be confirmed by phase shifts of voltage output varying with the direction of magnetization. Our formulas fit the experimental data very well. Moreover, we discuss more configuration of magnetization which is expected to be tested in the future. It should be emphasized that the present formalism including spin effects is out of the theory based on magnon transport, which may be conspicuous in the devices within the spin diffusion length.

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe_{2}/WSe_{2} bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40  ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than 3 orders of magnitude via electrostatic doping, enabling switching of the DOCP from ∼80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.

The valley Nernst effect in WSe2

The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{2}$$\end{document}2 mono-multi-layers and the ferromagnetic resonance-spin pumping technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{2}$$\end{document}2 that we detect electrically at room temperature. The valley Nernst coefficient is in good agreement with the predicted value.

Atomically thin transition metal dichalcogenides possess a valley degree of freedom, which could enrich the physics underpinning the conventional Nernst effect observed in traditional solids. Here, the authors report experimental evidence of the valley Nernst effect in WSe₂ at room temperature.

First Principle Study of Temperature-Dependent Magnetoresistance and Spin Filtration Effect in WS2 Nanoribbon

An applicable use of density functional theory (DFT) along with nonequilibrium Green's function (NEGF) is done for exploring the temperature-dependent spin electron transport nature in a ferromagnetic tungsten disulfide (WS₂) nanoribbon. To demonstrate the effect of temperature on spin filtration and spin Seebeck effect, we evaluated vital parameters such as spin-polarized current and spin filtration efficiency. Spin filtration efficiency of around ∼95% is obtained in the high-temperature difference range. The high temperature (T_L) of the left electrode in comparison to the high temperature (T_R) of the right electrode results in higher and lower spin filtration efficiency in parallel magnetization (PM) and antiparallel magnetization (APM), respectively. Transmission spectrum plots at equilibrium are also calculated in PM and APM to justify the temperature-dependent spin transport behavior in the WS₂ nanoribbon. Giant thermal magnetoresistance around 1.934 × 10³% is achieved. The temperature-dependent negative differential resistance behavior of the current plot has been observed. Huge value of thermal magnetoresistance (MR) and excellent spin filtration obtained for WS₂ nanoribbon suggests the potential application of this material in spin caloritronic devices.

Magnetic Contribution to the Seebeck Effect

The Seebeck effect is derived within the thermodynamics of irreversible processes when the generalized forces contain the magnetic term M∇B. This term appears in the formalism when the magnetic field is treated as a state variable. Two subsystems are considered, one representing atomic magnetic moments, and the other, mobile charges carrying a magnetic dipole moment. A magnetic contribution to the Seebeck coefficient is identified, proportional to the logarithmic derivative of the magnetization with respect to temperature. A brief review of experimental data on magneto-thermopower in magnetic metals illustrates this magnetic effect on thermally-driven charge transport.

Thermally driven anomalous Hall effect transitions in FeRh

Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the AFM state and a sign change in the spin Hall conductivity across the transition are found. It is suggested that the FeRh can be used a spin current detector capable of differentiating the spin Hall effect from other anomalous transverse effects. The implications of this material and its thermally driven phases as a spin current detection scheme are also discussed.

Generation of large spin and valley currents in a quantum pump based on molybdenum disulfide

Generation of large currents, versatile functionality, and simple structures are of fundamental importance in the development of adiabatic quantum pump devices with nanoscale dimensions. In the present study, we propose an adiabatic quantum pump with a simple structure based on molybdenum disulfide, MoS₂, to generate large spin and valley resolved currents. We show that pure and fully polarized spin and valley currents can be easily generated by employing two potential gates and using an exchange magnetic field. Unlike graphene and silicene, in order to induce a valley resolved current in MoS₂, one does not need to induce strain and apply an electric field. The spin and valley resolved currents are completely coupled together, so that the spin up (down) current is exactly equal to the valley K(K') current. Hence, we can detect the valley resolved current by utilizing more straightforward and simple methods used for the detection of spin resolved currents. The other prominent feature of this proposed pump is its large current, which is two and three orders of magnitude larger than the maximum current of similar pump structures based on silicene and graphene, respectively. The results of this study are promising for the fabrication of quantum pumps with large spin and valley resolved currents, which opens up the possibility of further development of spintronics and valleytronics in 2D nanostructures.

Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film

Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.