Metal-Insulator Transition in VO_{2}: A DFT+DMFT Perspective

Quenched Pair Breaking by Interlayer Correlations as a Key to Superconductivity in La_{3}Ni_{2}O_{7}

The recent discovery of superconductivity in La_{3}Ni_{2}O_{7} with T_{c}≃80  K under high pressure opens up a new route to high-T_{c} superconductivity. This material realizes a bilayer square lattice model featuring a strong interlayer hybridization unlike many unconventional superconductors. A key question in this regard concerns how electronic correlations driven by the interlayer hybridization affect the low-energy electronic structure and the concomitant superconductivity. Here, we demonstrate using a cluster dynamical mean-field theory that the interlayer electronic correlations (IECs) induce a Lifshitz transition resulting in a change of Fermi surface topology. By solving an appropriate gap equation, we further show that the leading pairing instability, s± wave, is enhanced by the IECs. The underlying mechanism is the quenching of a strong ferromagnetic channel, resulting from the Lifshitz transition driven by the IECs. Based on this picture, we provide a possible reason of why superconductivity emerges only under high pressure.

Proton Conducting Neuromorphic Materials and Devices

Neuromorphic computing and artificial intelligence hardware generally aims to emulate features found in biological neural circuit components and to enable the development of energy-efficient machines. In the biological brain, ionic currents and temporal concentration gradients control information flow and storage. It is therefore of interest to examine materials and devices for neuromorphic computing wherein ionic and electronic currents can propagate. Protons being mobile under an external electric field offers a compelling avenue for facilitating biological functionalities in artificial synapses and neurons. In this review, we first highlight the interesting biological analog of protons as neurotransmitters in various animals. We then discuss the experimental approaches and mechanisms of proton doping in various classes of inorganic and organic proton-conducting materials for the advancement of neuromorphic architectures. Since hydrogen is among the lightest of elements, characterization in a solid matrix requires advanced techniques. We review powerful synchrotron-based spectroscopic techniques for characterizing hydrogen doping in various materials as well as complementary scattering techniques to detect hydrogen. First-principles calculations are then discussed as they help provide an understanding of proton migration and electronic structure modification. Outstanding scientific challenges to further our understanding of proton doping and its use in emerging neuromorphic electronics are pointed out.

Atomically Resolved Phase Coexistence in VO2 Thin Films

Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.

Resistive Avalanches in La1-xSrxCoO3-δ (x = 0, 0.3) Thin Films and Their Reversible Evolution by Tuning Lattice Oxygen Vacancies (δ)

Strong correlations are often manifested by exotic electronic phases and phase transitions. LaCoO3-δ (LCO) is a system that exhibits such strong electronic correlations with lattice-spin-charge-orbital degrees of freedom. Here, we show that mesoscopic oxygen-deficient LCO films show resistive avalanches of about 2 orders of magnitude due to the metal-insulator transition (MIT) of the film at about 372 K for the 25 W RF power-deposited LCO film on the Si/SiO2 substrate. In bulk, this transition is otherwise gradual and occurs over a very large temperature range. In thin films of LCO, the oxygen deficiency (0 < δ < 0.5) is more easily reversibly tuned, resulting in avalanches. The avalanches disappear after vacuum annealing, and the films behave like normal insulators (δ ∼0.5) with Co2+ in charge ordering alternatively with Co3+. This oxidation state change induces spin state crossovers that result in a spin blockade in the insulating phase, while the conductivity arises from hole hopping among the allowed cobalt Co4+ ion spin states at high temperature. The chemical pressure (strain) of 30% Sr2+ doping at the La3+ site results in reduction in the avalanche magnitude as well as their retention in subsequent heating cycles. The charge nonstoichiometry arising due to Sr2+ doping is found to contribute toward hole doping (i.e., Co3+ oxidation to Co4+) and thereby the retention of the hole percolation pathway. This is also manifested in energies of crossover from the 3D variable range hopping (VRH) type transport observed in the temperature range of 300-425 K, while small polaron hopping (SPH) is observed in the temperature range of 600-725 K for LCO. On the other hand, Sr-doped LCO does not show any crossover and only the VRH type of transport. The strain due to Sr2+ doping refrains the lattice from complete conversion of δ going to 0.5, retaining the avalanches.

Plasmonic switches based on VO2as the phase change material

In this paper, a comprehensive review of the recent advancements in the design and development of plasmonic switches based on vanadium dioxide (VO2) is presented. Plasmonic switches are employed in applications such as integrated photonics, plasmonic logic circuits and computing networks for light routing and switching, and are based on the switching of the plasmonic properties under the effect of an external stimulus. In the last few decades, plasmonic switches have seen a significant growth because of their ultra-fast switching speed, wide spectral tunability, ultra-compact size, and low losses. In this review, first, the mechanism of the semiconductor to metal phase transition in VO2is discussed and the reasons for employing VO2over other phase change materials for plasmonic switching are described. Subsequently, an exhaustive review and comparison of the current state-of-the-art plasmonic switches based on VO2proposed in the last decade is carried out. As the phase transition in VO2can be activated by application of temperature, voltage or optical light pulses, this review paper has been categorized into thermally-activated, electrically-activated, and optically-activated plasmonic switches based on VO2operating in the visible, near-infrared, infrared and terahertz frequency regions.

In Situ TEM Characterization and Modulation for Phase Engineering of Nanomaterials

Solid-state phase transformation is an intriguing phenomenon in crystalline or noncrystalline solids due to the distinct physical and chemical properties that can be obtained and modified by phase engineering. Compared to bulk solids, nanomaterials exhibit enhanced capability for phase engineering due to their small sizes and high surface-to-volume ratios, facilitating various emerging applications. To establish a comprehensive atomistic understanding of phase engineering, in situ transmission electron microscopy (TEM) techniques have emerged as powerful tools, providing unprecedented atomic-resolution imaging, multiple characterization and stimulation mechanisms, and real-time integrations with various external fields. In this Review, we present a comprehensive overview of recent advances in in situ TEM studies to characterize and modulate nanomaterials for phase transformations under different stimuli, including mechanical, thermal, electrical, environmental, optical, and magnetic factors. We briefly introduce crystalline structures and polymorphism and then summarize phase stability and phase transformation models. The advanced experimental setups of in situ techniques are outlined and the advantages of in situ TEM phase engineering are highlighted, as demonstrated via several representative examples. Besides, the distinctive properties that can be obtained from in situ phase engineering are presented. Finally, current challenges and future research opportunities, along with their potential applications, are suggested.

Anisotropic magnetoresistance: materials, models and applications

Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetization: R ∥ for magnetization parallel to the electric current direction is different from R⊥ for magnetization perpendicular to the electric current direction. In this review, this century-old phenomenon is reviewed both from the perspective of materials and physical mechanisms involved. More recently, this effect has also been identified and studied in antiferromagnets. To date, sensors based on the anisotropic magnetoresistance (AMR) effect are widely used in different fields, such as the automotive industry, aerospace or in biomedical imaging.

Harnessing the Metal-Insulator Transition of VO2 in Neuromorphic Computing

Future-generation neuromorphic computing seeks to overcome the limitations of von Neumann architectures by colocating logic and memory functions, thereby emulating the function of neurons and synapses in the human brain. Despite remarkable demonstrations of high-fidelity neuronal emulation, the predictive design of neuromorphic circuits starting from knowledge of material transformations remains challenging. VO2 is an attractive candidate since it manifests a near-room-temperature, discontinuous, and hysteretic metal-insulator transition. The transition provides a nonlinear dynamical response to input signals, as needed to construct neuronal circuit elements. Strategies for tuning the transformation characteristics of VO2 based on modification of material properties, interfacial structure, and field couplings, are discussed. Dynamical modulation of transformation characteristics through in situ processing is discussed as a means of imbuing synaptic function. Mechanistic understanding of site-selective modification; external, epitaxial, and chemical strain; defect dynamics; and interfacial field coupling in modifying local atomistic structure, the implications therein for electronic structure, and ultimately, the tuning of transformation characteristics, is emphasized. Opportunities are highlighted for inverse design and for using design principles related to thermodynamics and kinetics of electronic transitions learned from VO2 to inform the design of new Mott materials, as well as to go beyond energy-efficient computation to manifest intelligence.

Dynamic tuning of optical absorbance and structural color of VO2-based metasurface

Vanadium dioxide (VO2) is an attractive thermal-control material exhibiting low thermal hysteresis and excellent temperature cycling performance. However, the deficiencies including weak spectral shift and narrow-band absorption during insulating-metallic transitions hinder its application in optoelectronics. The transition metal dichalcogenides (TMDs) can provide a promising solution with their high dielectric properties and robust optical coupling. Here, we report a MoS2/VO2/Au/Si metasurface and investigate the dynamic tunability of its optical absorbance and structural color upon heating via spectroscopic ellipsometry measurements and numerical simulations. The first-principles calculations reveal that the dielectric absorptions of metallic and insulating VO2 oppositely response to temperature, closely related to the difference in the transitions of O-2p states. Finite-element simulations reveal that the introduction of MoS2 nanostructure induces more absorption peaks by 2∼3 and achieves strong absorption in the full wavelength range of visible light. The Fabry-Perot (F-P) resonance is the critical factor for the optimized optical absorption. The structural color is sensitive to environmental perturbations at high-ε state of VO2, lower oblique incidence angles, and heights of MoS2. This work seeks to facilitate the spectral modulation of phase change metamaterials and can be extended to photoelectric detection and temperature sensing applications.

A theoretical study on pseudo Mott phase transition of vanadium dioxide

The Peierls geometrical distortion rather than Mott electronic correlation always plays a decisive role in the thermally induced phase transition in which the presence of Coulomb repulsion between electrons does not have an effect.

Thermochromic Fenestration Elements Based on the Dispersion of Functionalized VO2 Nanocrystals within a Polyvinyl Butyral Laminate

The energy required to heat, cool, and illuminate buildings continues to increase with growing urbanization, engendering a substantial global carbon footprint for the built environment. Passive modulation of the solar heat gain of buildings through the design of spectrally selective thermochromic fenestration elements holds promise for substantially alleviating energy consumed for climate control and lighting. The binary vanadium(IV) oxide VO₂ manifests a robust metal-insulator transition that brings about a pronounced modulation of its near-infrared transmittance in response to thermal activation. As such, VO₂ nanocrystals are potentially useful as the active elements of transparent thermochromic films and coatings. Practical applications in retrofitting existing buildings requires the design of workflows to embed thermochromic fillers within industrially viable resins. Here, we describe the dispersion of VO₂ nanocrystals within a polyvinyl butyral laminate commonly used in the laminated glass industry as a result of its high optical clarity, toughness, ductility, and strong adhesion to glass. To form high-optical-clarity nanocomposite films, VO₂ nanocrystals are encased in a silica shell and functionalized with 3-methacryloxypropyltrimethoxysilane, enabling excellent dispersion of the nanocrystals in PVB through the formation of siloxane linkages and miscibility of the methacrylate group with the random copolymer. Encapsulation, functionalization, and dispersion of the core-shell VO₂@SiO₂ nanocrystals mitigates both Mie scattering and light scattering from refractive index discontinuities. The nanocomposite laminates exhibit a 22.3% modulation of NIR transmittance with the functionalizing moiety engendering a 77% increase of visible light transmittance as compared to unfunctionalized core-shell particles. The functionalization scheme and workflow demonstrated, here, illustrates a viable approach for integrating thermochromic functionality within laminated glass used for retrofitting buildings.

Tunable Tribovoltaic Effect via Metal-Insulator Transition

Tribovoltaic direct-current (DC) nanogenerator made of dynamic semiconductor heterojunction is emerging as a promising mechanical energy harvesting technology. However, fundamental understanding of the mechano-electronic carrier excitation and transport at dynamic semiconductor interfaces remains to be investigated. Here, we demonstrated for the first time, that tribovoltaic DC effect can be tuned with metal-insulator transition (MIT). In a representative MIT material (vanadium dioxide, VO₂), we found that the short-circuit current (I_SC) can be enhanced by >20 times when the material is transformed from insulating to metallic state upon static or dynamic heating, while the open-circuit voltage (V_OC) turns out to be unaffected. Such phenomenon may be understood by the Hubbard model for Mott insulator: orders' magnitude increase in conductivity is induced when the nearest hopping changes dramatically and overcomes the Coulomb repulsion, while the Coulomb repulsion giving rise to the quasi-particle excitation energy remains relatively stable.

Decoupled ultrafast electronic and structural phase transitions in photoexcited monoclinic VO2

Photoexcitation has emerged as an efficient way to trigger phase transitions in strongly correlated materials. There are great controversies about the atomistic mechanisms of structural phase transitions (SPTs) from monoclinic (M₁-) to rutile (R-) VO₂ and its association with electronic insulator-metal transitions (IMTs). Here, we illustrate the underlying atomistic processes and decoupling nature of photoinduced SPT and IMT in nonequilibrium states. The photoinduced SPT proceeds in the order of dilation of V-V pairs and increase of twisting angles after a small delay of ~40 fs. Dynamic simulations with hybrid functionals confirm the existence of isostructural IMT. The photoinduced SPT and IMT exhibit the same thresholds of electronic excitations, indicating similar fluence thresholds in experiments. The IMT is quasi-instantaneously (<10 fs) generated, while the SPT takes place with time a constant of 100 to 300 fs. These findings clarify some key controversies in the literature and provide insights into nonequilibrium phase transitions in correlated materials.

Photonic bandgap engineering in (VO2)n/(WSe2)nphotonic superlattice for versatile near- and mid-infrared phase transition applications

The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO₂) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO₂as a strongly correlated phase transition material and tungsten diselenide (WSe₂) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO₂with WSe₂in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO₂layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO₂thickness. For the monoclinic case of VO₂, the number of the forbidden bands increase with the number of layers of WSe₂. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.

Decoupling the metal-insulator transition temperature and hysteresis of VO2 using Ge alloying and oxygen vacancies

The metal-to-insulator transition of VO₂ underpins applications in thermochromics, neuromorphic computing, and infrared vision. Ge alloying is shown to elevate the transition temperature by promoting V-V dimerization, thereby expanding the stability of the monoclinic phase to higher temperatures. By suppressing the propensity for oxygen vacancy formation, Ge alloying renders the hysteresis of the transition exquisitely sensitive to oxygen stoichiometry.

The mechanism of semiconductor to metal transition in the hydrogenation of VO2: A density functional theory study

VO2 is a glamorous material with specific metal-semiconductor-transition (MST). The hydrogenation of VO2 could make it a promising material applying in the ambient environment. In this work, we reveal the...

Fragile 3D Order in V_{1-x}Mo_{x}O_{2}

The metal-to-insulator transition in rutile VO_{2} has proven uniquely difficult to characterize because of the complex interplay between electron correlations and atomic structure. Here, we report the discovery of the sudden collapse of three-dimensional order in the low-temperature phase of V_{1-x}Mo_{x}O_{2} at x=0.17 and the emergence of a novel frustrated two-dimensional order at x=0.19, with only a slight change in electronic properties. Single crystal diffuse x-ray scattering reveals that this transition from the 3D M1 phase to a 2D variant of the M2 phase results in long-range structural correlations along symmetry-equivalent (11L) planes of the tetragonal rutile structure, yet extremely short-range correlations transverse to these planes. These findings suggest that this two dimensionality results from a novel form of geometric frustration that is essentially structural in origin.

First principles studies of the electronic and structural properties of the rutile VO2(110) surface and its oxygen-rich terminations

We present a density functional theory (DFT) study of the structural and electronic properties of the bare metallic rutile VO₂(110) surface and its oxygen-rich terminations. Due to the polyvalent nature of vanadium and abundance of oxide phases, the modelling of this material on the DFT level remains a challenging task. We discuss the performance of various DFT functionals, including PBE, PBE +U(U= 2 eV), SCAN and SCAN + rVV functionals with non-magnetic and ferromagnetic spin ordering, and show that the calculated phase stabilities depend on the chosen functional. We predict the presence of a ring-like termination that is electronically and structurally related to an insulating V₂O₅(001) monolayer and shows a higher stability than pure oxygen adsorption phases. Our results show that employing the spin-polarized SCAN functional offers a good compromise, as it offers both a reasonable description of the structural and electronic properties of the rutile VO₂bulk phase and the enthalpy of formation for oxygen rich vanadium phases present at the surface.

Decoupling the metal insulator transition and crystal field effects of VO2

VO2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the Tc can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO2 (Cr-VO2 and Co-VO2) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO2 and Co-VO2 films showed sharp MIT features. The Tc values of the Cr-VO2 and Co-VO2 films first decreased and then increased relative to that of pristine VO2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO2 films with a Cr ion flux ≥ 1013 ions/cm2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t2g and eg orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at both vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO2 experiences a sharp MIT when the distance of V-V pairs undergoes an SPT without any transitions in either the VO6 octahedrons or the V 3d t2g and eg states. This indicates that the MIT of VO2 occurs with no changes of the crystal fields.

Understanding the Phase Transition Evolution Mechanism of Partially M2 Phased VO2 Film by Hydrogen Incorporation

Studies on the hydrogen incorporated M1 phase of VO₂ film have been widely reported. However, there are few works on an M2 phase of VO₂. Recently, the M2 phase in VO₂ has received considerable attention due to the possibility of realizing a Mott transition field-effect transistor. By varying the postannealing environment, systematic variations of the M2 phase in (020)-oriented VO₂ films grown on Al₂O₃(0001) were observed. The M2 phase converted to the metallic M1 phase at first and then to the metallic rutile phase after hydrogen annealing (i.e., for H₂/N₂ mixture and H₂ environments). From the diffraction and spectroscopy measurements, the transition is attributed to suppressed electron interactions, not structural modification caused by hydrogen incorporation. Our results suggest the understanding of the phase transition process of the M2 phase by hydrogen incorporation and the possibility of realization of the M2 phased-based Mott transition field-effect transistor.

First-Principles Investigations to Evaluate the Spin-Polarized Metal-to-Insulator Transition of Halide Cuprite Perovskites for Smart Windows

Although smart windows have received wide attention as energy-saving devices, conventional metal-to-insulator materials such as VO₂ hinder their commercial usage because of their high transition temperature and low solar energy modulation. Further development can be achieved by finding a new material system that can effectively overcome these limitations. In this study, first-principles density functional theory calculations are used to investigate the possibility of exploiting a spin-polarized band gap material for smart window applications. Halide cuprite perovskites (A₂CuX₄) were chosen because they have a spin-polarized band gap that can be tuned by element selection at sites A and X. Our study shows that the optical transmittance of the insulating phase is increased by a violation of the selection rule. The spin-polarized band gap is closely related to the metal-to-insulator transition temperature and can be modulated by chemical engineering, strain engineering, or both. Therefore, A₂CuX₄ is a promising candidate for smart windows.

All-t2g Electronic Orbital Reconstruction of Monoclinic MoO2 Battery Material

Motivated by experiments, we undertake an investigation of electronic structure reconstruction and its link to electrodynamic responses of monoclinic MoO2. Using a combination of LDA band structure with DMFT for the subspace defined by the physically most relevant Mo 4d-bands, we unearth the importance of multi-orbital electron interactions to MoO2 parent compound. Supported by a microscopic description of quantum capacity we identify the implications of many-particle orbital reconstruction to understanding and evaluating voltage-capacity profiles intrinsic to MoO2 battery material. Therein, we underline the importance of the dielectric function and optical conductivity in the characterisation of existing and candidate battery materials.

Impacts of Oxygen Vacancies on Zinc Ion Intercalation in VO2

The aqueous zinc ion battery has emerged as a promising alternative technology for large-scale energy storage due to its low cost, natural abundance, and high safety features. However, the sluggish kinetics stemming from the strong electrostatic interaction of divalent zinc ions in the host crystal structure is one of challenges for highly efficient energy storage. Oxygen vacancies (V_O^••), in the present work, lead to a larger tunnel structure along the b axis, which improves the reactive kinetics and enhances Zn-ion storage capability in VO₂ (B) cathode. DFT calculations further support that V_O^•• in VO₂ (B) result in a narrower bandgap and lower Zn ion diffusion energy barrier compared to those of pristine VO₂ (B). V_O^••-rich VO₂ (B) achieves a specific capacity of 375 mAh g^-1 at a current density of 100 mA g^-1 and long-term cyclic stability with retained specific capacity of 175 mAh g^-1 at 5 A g^-1 over 2000 cycles (85% capacity retention), higher than that of VO₂ (B) nanobelts (280 mAh g^-1 at 100 mA g^-1 and 120 mAh g^-1 at 5 A g^-1, 65% capacity retention).

Simultaneous Structural and Electronic Transitions in Epitaxial VO_{2}/TiO_{2}(001)

Recent reports have identified new metaphases of VO_{2} with strain and/or doping, suggesting the structural phase transition and the metal-to-insulator transition might be decoupled. Using epitaxially strained VO_{2}/TiO_{2} (001) thin films, which display a bulklike abrupt metal-to-insulator transition and rutile to monoclinic transition structural phase transition, we employ x-ray standing waves combined with hard x-ray photoelectron spectroscopy to simultaneously measure the structural and electronic transitions. This x-ray standing waves study elegantly demonstrates the structural and electronic transitions occur concurrently within experimental limits (±1  K).

Electron correlations and memory effects in ultrafast electron and hole dynamics in VO2

By applying an approach based on time-dependent density functional theory and dynamical mean-field theory (TDDFT+DMFT) we examine the role of electron correlations in the ultrafast breakdown of the insulating M₁ phase in bulk VO₂. We consider the case of a spatially homogeneous ultrafast (femtosecond) laser pulse perturbation and present the dynamics of the melting of the insulating state, in particular the time-dependence of the excited charge density. The time-dependence of the chemical potential of the excited electron and hole subsystems shows that even for such short times the dynamics of the system is significantly affected by memory effects-the time-resolved electron-electron interactions. The results pave the way for obtaining a microscopic understanding of the ultrafast dynamics of strongly-correlated materials.

Mott Metal-Insulator Transitions in Pressurized Layered Trichalcogenides

Transition metal phosphorous trichalcogenides, MPX_{3} (M and X being transition metal and chalcogen elements, respectively), have been the focus of substantial interest recently because they are unusual candidates undergoing Mott transition in the two-dimensional limit. Here we investigate material properties of the compounds with M=Mn and Ni employing ab initio density functional and dynamical mean-field calculations, especially their electronic behavior under external pressure in the paramagnetic phase. Mott metal-insulator transitions (MIT) are found to be a common feature for both compounds, but their lattice structures show drastically different behaviors depending on the relevant orbital degrees of freedom, i.e., t_{2g} or e_{g}. Under pressure, MnPS_{3} can undergo an isosymmetric structural transition within monoclinic space group by forming Mn-Mn dimers due to the strong direct overlap between the neighboring t_{2g} orbitals, accompanied by a significant volume collapse and a spin-state transition. In contrast, NiPS_{3} and NiPSe_{3}, with their active e_{g} orbital degrees of freedom, do not show a structural change at the MIT pressure or deep in the metallic phase within the monoclinic symmetry. Hence NiPS_{3} and NiPSe_{3} become rare examples of materials hosting electronic bandwidth-controlled Mott MITs, thus showing promise for ultrafast resistivity switching behavior.

How optical excitation controls the structure and properties of vanadium dioxide

We combine ultrafast electron diffraction and time-resolved terahertz spectroscopy measurements to link structure and electronic transport properties during the photoinduced insulator-metal transitions in vanadium dioxide. We determine the structure of the metastable monoclinic metal phase, which exhibits antiferroelectric charge order arising from a thermally activated, orbital-selective phase transition in the electron system. The relative contribution of the photoinduced monoclinic and rutile metals to the time-dependent and pump-fluence-dependent multiphase character of the film is established, as is the respective impact of these two distinct phase transitions on the observed changes in terahertz conductivity. Our results represent an important example of how light can control the properties of strongly correlated materials and demonstrate that multimodal experiments are essential when seeking a detailed connection between ultrafast changes in optical-electronic properties and lattice structure.

Observation of Weakened V-V Dimers in the Monoclinic Metallic Phase of Strained VO_{2}

Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO_{2} represents periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT, we unexpectedly find the long-range order of V-V dimer strength and crystal symmetry become dissociated beyond ≈200  nm, whereas the conductivity transition proceeds homogeneously in a narrow temperature range.

Toward a predictive theory of correlated materials

Correlated electron materials display a rich variety of notable properties ranging from unconventional superconductivity to metal-insulator transitions. These properties are of interest from the point of view of applications but are hard to treat theoretically, as they result from multiple competing energy scales. Although possible in more weakly correlated materials, theoretical design and spectroscopy of strongly correlated electron materials have been a difficult challenge for many years. By treating all the relevant energy scales with sufficient accuracy, complementary advances in Green's functions and quantum Monte Carlo methods open a path to first-principles computational property predictions in this class of materials.

Phonon Softening due to Melting of the Ferromagnetic Order in Elemental Iron

We study the fundamental question of the lattice dynamics of a metallic ferromagnet in the regime where the static long-range magnetic order is replaced by the fluctuating local moments embedded in a metallic host. We use the ab initio density functional theory + embedded dynamical mean-field theory functional approach to address the dynamic stability of iron polymorphs and the phonon softening with an increased temperature. We show that the nonharmonic and inhomogeneous phonon softening measured in iron is a result of the melting of the long-range ferromagnetic order and is unrelated to the first-order structural transition from the bcc to the fcc phase, as is usually assumed. We predict that the bcc structure is dynamically stable at all temperatures at normal pressure and is thermodynamically unstable only between the bcc-α and the bcc-δ phases of iron.

Ab initio study of Li, Mg and Al insertion into rutile VO2: fast diffusion and enhanced voltages for multivalent batteries

Vanadium oxides are among the most promising materials that can be used as electrodes in rechargeable metal-ion batteries. In this work, we systematically investigate thermodynamic, electronic, and kinetic properties associated with the insertion of Li, Mg and Al atoms into rutile VO₂. Using first-principles calculations, we systematically study the structural evolution and voltage curves of Li_xVO₂, Mg_xVO₂ and Al_xVO₂ (0 < x < 1) compounds. The calculated lithium intercalation voltage starts at 3.50 V for single-atom insertion and decreases to 2.23 V for full lithiation, to the LiVO₂ compound, which agrees well with the experimental results. The Mg insertion features a plateau about 1.6 V up to Mg_0.5VO₂ and then another plateau-like region at around 0.5 V up to Mg₁VO₂. The predicted voltage curve for Al insertion starts at 1.98 V, followed by two plateaus at 1.48 V and 1.17 V. The diffusion barrier of Li, Mg and Al in the tunnel structure of VO₂ is 0.06, 0.33 and 0.50 eV, respectively. The demonstrated excellent Li, Mg and Al mobility, high structural stability and high specific capacity suggest promising potential of rutile VO₂ electrodes especially for multivalent batteries.

Mott transition in chain structure of strained VO2 films revealed by coherent phonons

The characteristic of strongly correlated materials is the Mott transition between metal and insulator (MIT or IMT) in the same crystalline structure, indicating the presence of a gap formed by the Coulomb interaction between carriers. The physics of the transition needs to be revealed. Using VO₂, as a model material, we observe the emergence of a metallic chain in the intermediate insulating monoclinic structure (M2 phase) of epitaxial strained films, proving the Mott transition involving the breakdown of the critical Coulomb interaction. It is revealed by measuring the temperature dynamics of coherent optical phonons with separated vibrational modes originated from two substructures in M2: one is the charge-density-wave, formed by electron-phonon (e-ph) interaction, and the other is the equally spaced insulator-chain with electron-electron (e-e) correlations.

Hybrid Nanocomposite Films Comprising Dispersed VO2 Nanocrystals: A Scalable Aqueous-Phase Route to Thermochromic Fenestration

Buildings consume an inordinate amount of energy, accounting for 30-40% of worldwide energy consumption. A major portion of solar radiation is transmitted directly to building interiors through windows, skylights, and glazed doors where the resulting solar heat gain necessitates increased use of air conditioning. Current technologies aimed at addressing this problem suffer from major drawbacks, including a reduction in the transmission of visible light, thereby resulting in increased use of artificial lighting. Since currently used coatings are temperature-invariant in terms of their solar heat gain modulation, they are unable to offset cold-weather heating costs that would otherwise have resulted from solar heat gain. There is considerable interest in the development of plastic fenestration elements that can dynamically modulate solar heat gain based on the external climate and are retrofittable onto existing structures. The metal-insulator transition of VO₂ is accompanied by a pronounced modulation of near-infrared transmittance as a function of temperature and can potentially be harnessed for this purpose. Here, we demonstrate that a nanocomposite thin film embedded with well dispersed sub-100-nm diameter VO₂ nanocrystals exhibits a combination of high visible light transmittance, effective near-infrared suppression, and onset of NIR modulation at wavelengths <800 nm. In our approach, hydrothermally grown VO₂ nanocrystals with <100 nm diameters are dispersed within a methacrylic acid/ethyl acrylate copolymer after either (i) grafting of silanes to constitute an amorphous SiO₂ shell or (ii) surface functionalization with perfluorinated silanes and the use of a perfluorooctanesulfonate surfactant. Homogeneous and high optical quality thin films are cast from aqueous dispersions of the pH-sensitive nanocomposites onto glass. An entirely aqueous-phase process for preparation of nanocrystals and their effective dispersion within polymeric nanocomposites allows for realization of scalable and viable plastic fenestration elements.

Photoinduced Strain Release and Phase Transition Dynamics of Solid-Supported Ultrathin Vanadium Dioxide

The complex phase transitions of vanadium dioxide (VO₂) have drawn continual attention for more than five decades. Dynamically, ultrafast electron diffraction (UED) with atomic-scale spatiotemporal resolution has been employed to study the reaction pathway in the photoinduced transition of VO₂, using bulk and strain-free specimens. Here, we report the UED results from 10-nm-thick crystalline VO₂ supported on Al₂O₃(0001) and examine the influence of surface stress on the photoinduced structural transformation. An ultrafast release of the compressive strain along the surface-normal direction is observed at early times following the photoexcitation, accompanied by faster motions of vanadium dimers that are more complex than simple dilation or bond tilting. Diffraction simulations indicate that the reaction intermediate involved on picosecond times may not be a single state, which implies non-concerted atomic motions on a multidimensional energy landscape. At longer times, a laser fluence multiple times higher than the thermodynamic enthalpy threshold is required for complete conversion from the initial monoclinic structure to the tetragonal lattice. For certain crystalline domains, the structural transformation is not seen even on nanosecond times following an intense photoexcitation. These results signify a time-dependent energy distribution among various degrees of freedom and reveal the nature of and the impact of strain on the photoinduced transition of VO₂.

Structure-Induced Switching of the Band Gap, Charge Order, and Correlation Strength in Ternary Vanadium Oxide Bronzes

Recently, V₂ O₅ nanowires have been synthesized as several different polymorphs, and as correlated bronzes with cations intercalated between the layers of edge- and corner- sharing VO₆ octahedra. Unlike extended crystals, which tend to be plagued by substantial local variations in stoichiometry, nanowires of correlated bronzes exhibit precise charge ordering, thereby giving rise to pronounced electron correlation effects. These developments have greatly broadened the scope of research, and promise applications in several frontier electronic devices that make use of novel computing vectors. Here a study is presented of δ-Sr_x V₂ O₅ , expanded δ-Sr_x V₂ O₅ , exfoliated δ-Sr_x V₂ O₅ and δ-K_x V₂ O₅ using a combination of synchrotron soft X-ray spectroscopy and density functional theory calculations. The band gaps of each system are experimentally determined, and their calculated electronic structures are discussed from the perspective of the measured spectra. Band gaps ranging from 0.66 ± 0.20 to 2.32 ± 0.20 eV are found, and linked to the underlying structure of each material. This demonstrates that the band gap of V₂ O₅ can be tuned across a large portion of the range of greatest interest for device applications. The potential for metal-insulator transitions, tuneable electron correlations and charge ordering in these systems is discussed within the framework of our measurements and calculations, while highlighting the structure-property relationships that underpin them.

Imaging metal-like monoclinic phase stabilized by surface coordination effect in vanadium dioxide nanobeam

In correlated systems, intermediate states usually appear transiently across phase transitions even at the femtosecond scale. It therefore remains an open question how to determine these intermediate states—a critical issue for understanding the origin of their correlated behaviour. Here we report a surface coordination route to successfully stabilize and directly image an intermediate state in the metal-insulator transition of vanadium dioxide. As a prototype metal-insulator transition material, we capture an unusual metal-like monoclinic phase at room temperature that has long been predicted. Coordinate bonding of L-ascorbic acid molecules with vanadium dioxide nanobeams induces charge-carrier density reorganization and stabilizes metallic monoclinic vanadium dioxide, unravelling orbital-selective Mott correlation for gap opening of the vanadium dioxide metal–insulator transition. Our study contributes to completing phase-evolution pathways in the metal-insulator transition process, and we anticipate that coordination chemistry may be a powerful tool for engineering properties of low-dimensional correlated solids.

Identifying intermediates during phase transitions is critical for our understanding of correlated materials, but difficult to achieve experimentally. Here, the authors report a surface coordination route to stabilize and directly image a phase-transition intermediate during the metal-insulator transition in vanadium dioxide.

Switching VO₂ Single Crystals and Related Phenomena: Sliding Domains and Crack Formation

VO₂ is the prototype material for insulator–metal transition (IMT). Its transition at T_IMT = 340 K is fast and consists of a large resistance jump (up to approximately five orders of magnitude), a large change in its optical properties in the visible range, and symmetry change from monoclinic to tetragonal (expansion by 1% along the tetragonal c-axis and 0.5% contraction in the perpendicular direction). It is a candidate for potential applications such as smart windows, fast optoelectronic switches, and field-effect transistors. The change in optical properties at the IMT allows distinguishing between the insulating and the metallic phases in the mixed state. Static or dynamic domain patterns in the mixed-state of self-heated single crystals during electric-field induced switching are in strong contrast with the percolative nature of the mixed state in switching VO₂ films. The most impressive effect—so far unique to VO₂—is the sliding of narrow semiconducting domains within a metallic background in the positive sense of the electric current. Here we show images from videos obtained using optical microscopy for sliding domains along VO₂ needles and confirm a relation suggested in the past for their velocity. We also show images for the disturbing damage induced by the structural changes in switching VO₂ crystals obtained for only a few current–voltage cycles.