1
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Yuan Y, Patel RK, Banik S, Reta TB, Bisht RS, Fong DD, Sankaranarayanan SKRS, Ramanathan S. Proton Conducting Neuromorphic Materials and Devices. Chem Rev 2024. [PMID: 39038231 DOI: 10.1021/acs.chemrev.4c00071] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Neuromorphic computing and artificial intelligence hardware generally aims to emulate features found in biological neural circuit components and to enable the development of energy-efficient machines. In the biological brain, ionic currents and temporal concentration gradients control information flow and storage. It is therefore of interest to examine materials and devices for neuromorphic computing wherein ionic and electronic currents can propagate. Protons being mobile under an external electric field offers a compelling avenue for facilitating biological functionalities in artificial synapses and neurons. In this review, we first highlight the interesting biological analog of protons as neurotransmitters in various animals. We then discuss the experimental approaches and mechanisms of proton doping in various classes of inorganic and organic proton-conducting materials for the advancement of neuromorphic architectures. Since hydrogen is among the lightest of elements, characterization in a solid matrix requires advanced techniques. We review powerful synchrotron-based spectroscopic techniques for characterizing hydrogen doping in various materials as well as complementary scattering techniques to detect hydrogen. First-principles calculations are then discussed as they help provide an understanding of proton migration and electronic structure modification. Outstanding scientific challenges to further our understanding of proton doping and its use in emerging neuromorphic electronics are pointed out.
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Affiliation(s)
- Yifan Yuan
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States
| | - Ranjan Kumar Patel
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States
| | - Suvo Banik
- Department of Mechanical and Industrial Engineering, University of Illinois, Chicago, Illinois 60607, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Tadesse Billo Reta
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Ravindra Singh Bisht
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States
| | - Dillon D Fong
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Subramanian K R S Sankaranarayanan
- Department of Mechanical and Industrial Engineering, University of Illinois, Chicago, Illinois 60607, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Shriram Ramanathan
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States
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2
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Ahmadi M, Atul A, de Graaf S, van der Veer E, Meise A, Tavabi AH, Heggen M, Dunin-Borkowski RE, Ahmadi M, Kooi BJ. Atomically Resolved Phase Coexistence in VO 2 Thin Films. ACS NANO 2024; 18:13496-13505. [PMID: 38752408 PMCID: PMC11140831 DOI: 10.1021/acsnano.3c10745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 04/22/2024] [Accepted: 05/01/2024] [Indexed: 05/29/2024]
Abstract
Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.
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Affiliation(s)
- Masoud Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Atul Atul
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Sytze de Graaf
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Ewout van der Veer
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Ansgar Meise
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Amir Hossein Tavabi
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Marc Heggen
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Rafal E. Dunin-Borkowski
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Majid Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Bart J. Kooi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
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3
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Biswas S, Naushad N, S K, Kamble VB. Resistive Avalanches in La 1-xSr xCoO 3-δ ( x = 0, 0.3) Thin Films and Their Reversible Evolution by Tuning Lattice Oxygen Vacancies (δ). ACS MATERIALS AU 2024; 4:308-323. [PMID: 38737118 PMCID: PMC11083121 DOI: 10.1021/acsmaterialsau.3c00101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 01/18/2024] [Accepted: 01/23/2024] [Indexed: 05/14/2024]
Abstract
Strong correlations are often manifested by exotic electronic phases and phase transitions. LaCoO3-δ (LCO) is a system that exhibits such strong electronic correlations with lattice-spin-charge-orbital degrees of freedom. Here, we show that mesoscopic oxygen-deficient LCO films show resistive avalanches of about 2 orders of magnitude due to the metal-insulator transition (MIT) of the film at about 372 K for the 25 W RF power-deposited LCO film on the Si/SiO2 substrate. In bulk, this transition is otherwise gradual and occurs over a very large temperature range. In thin films of LCO, the oxygen deficiency (0 < δ < 0.5) is more easily reversibly tuned, resulting in avalanches. The avalanches disappear after vacuum annealing, and the films behave like normal insulators (δ ∼0.5) with Co2+ in charge ordering alternatively with Co3+. This oxidation state change induces spin state crossovers that result in a spin blockade in the insulating phase, while the conductivity arises from hole hopping among the allowed cobalt Co4+ ion spin states at high temperature. The chemical pressure (strain) of 30% Sr2+ doping at the La3+ site results in reduction in the avalanche magnitude as well as their retention in subsequent heating cycles. The charge nonstoichiometry arising due to Sr2+ doping is found to contribute toward hole doping (i.e., Co3+ oxidation to Co4+) and thereby the retention of the hole percolation pathway. This is also manifested in energies of crossover from the 3D variable range hopping (VRH) type transport observed in the temperature range of 300-425 K, while small polaron hopping (SPH) is observed in the temperature range of 600-725 K for LCO. On the other hand, Sr-doped LCO does not show any crossover and only the VRH type of transport. The strain due to Sr2+ doping refrains the lattice from complete conversion of δ going to 0.5, retaining the avalanches.
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Affiliation(s)
- Soumya Biswas
- School of Physics, Indian Institute
of Science Education and Research, Thiruvananthapuram 695551, India
| | - Noora Naushad
- School of Physics, Indian Institute
of Science Education and Research, Thiruvananthapuram 695551, India
| | - Kalyani S
- School of Physics, Indian Institute
of Science Education and Research, Thiruvananthapuram 695551, India
| | - Vinayak B. Kamble
- School of Physics, Indian Institute
of Science Education and Research, Thiruvananthapuram 695551, India
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4
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Dalal K, Sharma Y. Plasmonic switches based on VO 2as the phase change material. NANOTECHNOLOGY 2024; 35:142001. [PMID: 38100839 DOI: 10.1088/1361-6528/ad1642] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 12/15/2023] [Indexed: 12/17/2023]
Abstract
In this paper, a comprehensive review of the recent advancements in the design and development of plasmonic switches based on vanadium dioxide (VO2) is presented. Plasmonic switches are employed in applications such as integrated photonics, plasmonic logic circuits and computing networks for light routing and switching, and are based on the switching of the plasmonic properties under the effect of an external stimulus. In the last few decades, plasmonic switches have seen a significant growth because of their ultra-fast switching speed, wide spectral tunability, ultra-compact size, and low losses. In this review, first, the mechanism of the semiconductor to metal phase transition in VO2is discussed and the reasons for employing VO2over other phase change materials for plasmonic switching are described. Subsequently, an exhaustive review and comparison of the current state-of-the-art plasmonic switches based on VO2proposed in the last decade is carried out. As the phase transition in VO2can be activated by application of temperature, voltage or optical light pulses, this review paper has been categorized into thermally-activated, electrically-activated, and optically-activated plasmonic switches based on VO2operating in the visible, near-infrared, infrared and terahertz frequency regions.
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Affiliation(s)
- Kirti Dalal
- Department of Electronics and Communication Engineering, Delhi Technological University, Bawana Road, Delhi, 110042, India
| | - Yashna Sharma
- Department of Electronics and Communication Engineering, Delhi Technological University, Bawana Road, Delhi, 110042, India
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5
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Han Y, Wang L, Cao K, Zhou J, Zhu Y, Hou Y, Lu Y. In Situ TEM Characterization and Modulation for Phase Engineering of Nanomaterials. Chem Rev 2023; 123:14119-14184. [PMID: 38055201 DOI: 10.1021/acs.chemrev.3c00510] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Solid-state phase transformation is an intriguing phenomenon in crystalline or noncrystalline solids due to the distinct physical and chemical properties that can be obtained and modified by phase engineering. Compared to bulk solids, nanomaterials exhibit enhanced capability for phase engineering due to their small sizes and high surface-to-volume ratios, facilitating various emerging applications. To establish a comprehensive atomistic understanding of phase engineering, in situ transmission electron microscopy (TEM) techniques have emerged as powerful tools, providing unprecedented atomic-resolution imaging, multiple characterization and stimulation mechanisms, and real-time integrations with various external fields. In this Review, we present a comprehensive overview of recent advances in in situ TEM studies to characterize and modulate nanomaterials for phase transformations under different stimuli, including mechanical, thermal, electrical, environmental, optical, and magnetic factors. We briefly introduce crystalline structures and polymorphism and then summarize phase stability and phase transformation models. The advanced experimental setups of in situ techniques are outlined and the advantages of in situ TEM phase engineering are highlighted, as demonstrated via several representative examples. Besides, the distinctive properties that can be obtained from in situ phase engineering are presented. Finally, current challenges and future research opportunities, along with their potential applications, are suggested.
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Affiliation(s)
- Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Liqiang Wang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Ke Cao
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi 710026, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Yingxin Zhu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong SAR 999077, China
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6
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Ritzinger P, Výborný K. Anisotropic magnetoresistance: materials, models and applications. ROYAL SOCIETY OPEN SCIENCE 2023; 10:230564. [PMID: 37859834 PMCID: PMC10582618 DOI: 10.1098/rsos.230564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 09/07/2023] [Indexed: 10/21/2023]
Abstract
Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetization: R ∥ for magnetization parallel to the electric current direction is different from R⊥ for magnetization perpendicular to the electric current direction. In this review, this century-old phenomenon is reviewed both from the perspective of materials and physical mechanisms involved. More recently, this effect has also been identified and studied in antiferromagnets. To date, sensors based on the anisotropic magnetoresistance (AMR) effect are widely used in different fields, such as the automotive industry, aerospace or in biomedical imaging.
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Affiliation(s)
- Philipp Ritzinger
- FZU—Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, Praha 6 16253, Czech Republic
- MFF—Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, Praha 2 12000, Czech Republic
| | - Karel Výborný
- FZU—Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, Praha 6 16253, Czech Republic
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7
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Schofield P, Bradicich A, Gurrola RM, Zhang Y, Brown TD, Pharr M, Shamberger PJ, Banerjee S. Harnessing the Metal-Insulator Transition of VO 2 in Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205294. [PMID: 36036767 DOI: 10.1002/adma.202205294] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2022] [Revised: 08/02/2022] [Indexed: 06/15/2023]
Abstract
Future-generation neuromorphic computing seeks to overcome the limitations of von Neumann architectures by colocating logic and memory functions, thereby emulating the function of neurons and synapses in the human brain. Despite remarkable demonstrations of high-fidelity neuronal emulation, the predictive design of neuromorphic circuits starting from knowledge of material transformations remains challenging. VO2 is an attractive candidate since it manifests a near-room-temperature, discontinuous, and hysteretic metal-insulator transition. The transition provides a nonlinear dynamical response to input signals, as needed to construct neuronal circuit elements. Strategies for tuning the transformation characteristics of VO2 based on modification of material properties, interfacial structure, and field couplings, are discussed. Dynamical modulation of transformation characteristics through in situ processing is discussed as a means of imbuing synaptic function. Mechanistic understanding of site-selective modification; external, epitaxial, and chemical strain; defect dynamics; and interfacial field coupling in modifying local atomistic structure, the implications therein for electronic structure, and ultimately, the tuning of transformation characteristics, is emphasized. Opportunities are highlighted for inverse design and for using design principles related to thermodynamics and kinetics of electronic transitions learned from VO2 to inform the design of new Mott materials, as well as to go beyond energy-efficient computation to manifest intelligence.
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Affiliation(s)
- Parker Schofield
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Adelaide Bradicich
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Rebeca M Gurrola
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Yuwei Zhang
- Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | | | - Matt Pharr
- Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Patrick J Shamberger
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Sarbajit Banerjee
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
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8
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Miao JY, Wang WX, Jiang ZY, Zhang XD, Zheng JM, Du A. A theoretical study on pseudo Mott phase transition of vanadium dioxide. Phys Chem Chem Phys 2023; 25:759-767. [DOI: 10.1039/d2cp04763b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
The Peierls geometrical distortion rather than Mott electronic correlation always plays a decisive role in the thermally induced phase transition in which the presence of Coulomb repulsion between electrons does not have an effect.
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Affiliation(s)
- Jin-Yi Miao
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, 710069, Xi'an, China
| | - Wen-Xuan Wang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, 710069, Xi'an, China
| | - Zhen-Yi Jiang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, 710069, Xi'an, China
| | - Xiao-Dong Zhang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, 710069, Xi'an, China
| | - Ji-Ming Zheng
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, 710069, Xi'an, China
| | - Aijun Du
- Centre for Materials Science, School of Chemistry and Physics, Science and Engineering Faculty, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4001, Australia
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9
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Cool N, Larriuz CA, James R, Ayala JR, Anita, Al-Hashimi M, Banerjee S. Thermochromic Fenestration Elements Based on the Dispersion of Functionalized VO 2 Nanocrystals within a Polyvinyl Butyral Laminate. ACS ENGINEERING AU 2022; 2:477-485. [PMID: 36573177 PMCID: PMC9782456 DOI: 10.1021/acsengineeringau.2c00027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/18/2022] [Revised: 07/15/2022] [Accepted: 07/18/2022] [Indexed: 12/30/2022]
Abstract
The energy required to heat, cool, and illuminate buildings continues to increase with growing urbanization, engendering a substantial global carbon footprint for the built environment. Passive modulation of the solar heat gain of buildings through the design of spectrally selective thermochromic fenestration elements holds promise for substantially alleviating energy consumed for climate control and lighting. The binary vanadium(IV) oxide VO2 manifests a robust metal-insulator transition that brings about a pronounced modulation of its near-infrared transmittance in response to thermal activation. As such, VO2 nanocrystals are potentially useful as the active elements of transparent thermochromic films and coatings. Practical applications in retrofitting existing buildings requires the design of workflows to embed thermochromic fillers within industrially viable resins. Here, we describe the dispersion of VO2 nanocrystals within a polyvinyl butyral laminate commonly used in the laminated glass industry as a result of its high optical clarity, toughness, ductility, and strong adhesion to glass. To form high-optical-clarity nanocomposite films, VO2 nanocrystals are encased in a silica shell and functionalized with 3-methacryloxypropyltrimethoxysilane, enabling excellent dispersion of the nanocrystals in PVB through the formation of siloxane linkages and miscibility of the methacrylate group with the random copolymer. Encapsulation, functionalization, and dispersion of the core-shell VO2@SiO2 nanocrystals mitigates both Mie scattering and light scattering from refractive index discontinuities. The nanocomposite laminates exhibit a 22.3% modulation of NIR transmittance with the functionalizing moiety engendering a 77% increase of visible light transmittance as compared to unfunctionalized core-shell particles. The functionalization scheme and workflow demonstrated, here, illustrates a viable approach for integrating thermochromic functionality within laminated glass used for retrofitting buildings.
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Affiliation(s)
- Nicholas
I. Cool
- Department
of Chemistry, Texas A&M University, College Station, Texas 77843-3012, United States,Department
of Materials Science and Engineering, Texas
A&M University, College Station, Texas 77843-3012, United States
| | - Carlos A. Larriuz
- Department
of Chemistry, Texas A&M University, College Station, Texas 77843-3012, United States,Department
of Chemistry, University of Puerto Rico, Cayey, Puerto Rico 00736, United States
| | - Randall James
- Department
of Chemistry, Texas A&M University, College Station, Texas 77843-3012, United States
| | - Jaime R. Ayala
- Department
of Chemistry, Texas A&M University, College Station, Texas 77843-3012, United States,Department
of Materials Science and Engineering, Texas
A&M University, College Station, Texas 77843-3012, United States
| | - Anita
- Department
of Chemistry, Texas A&M University, College Station, Texas 77843-3012, United States,Department
of Materials Science and Engineering, Texas
A&M University, College Station, Texas 77843-3012, United States
| | | | - Sarbajit Banerjee
- Department
of Chemistry, Texas A&M University, College Station, Texas 77843-3012, United States,Department
of Materials Science and Engineering, Texas
A&M University, College Station, Texas 77843-3012, United States,
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10
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Yang R, He Z, Lin S, Dou W, Wang ZL, Wang H, Liu J. Tunable Tribovoltaic Effect via Metal-Insulator Transition. NANO LETTERS 2022; 22:9084-9091. [PMID: 36342419 DOI: 10.1021/acs.nanolett.2c03481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Tribovoltaic direct-current (DC) nanogenerator made of dynamic semiconductor heterojunction is emerging as a promising mechanical energy harvesting technology. However, fundamental understanding of the mechano-electronic carrier excitation and transport at dynamic semiconductor interfaces remains to be investigated. Here, we demonstrated for the first time, that tribovoltaic DC effect can be tuned with metal-insulator transition (MIT). In a representative MIT material (vanadium dioxide, VO2), we found that the short-circuit current (ISC) can be enhanced by >20 times when the material is transformed from insulating to metallic state upon static or dynamic heating, while the open-circuit voltage (VOC) turns out to be unaffected. Such phenomenon may be understood by the Hubbard model for Mott insulator: orders' magnitude increase in conductivity is induced when the nearest hopping changes dramatically and overcomes the Coulomb repulsion, while the Coulomb repulsion giving rise to the quasi-particle excitation energy remains relatively stable.
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Affiliation(s)
- Ruizhe Yang
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York14260, United States
| | - Zihao He
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907-2045, United States
| | - Shiquan Lin
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing100083, People's Republic of China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Wenjie Dou
- School of Science, Westlake University, Hangzhou, Zhejiang310024, People's Republic of China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang310024, People's Republic of China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing100083, People's Republic of China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia30332-0245, United States
| | - Haiyan Wang
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907-2045, United States
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907-2045, United States
| | - Jun Liu
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York14260, United States
- RENEW (Research and Education in Energy, Environment and Water) Institute, University at Buffalo, The State University of New York, Buffalo, New York14260, United States
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11
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Xu J, Chen D, Meng S. Decoupled ultrafast electronic and structural phase transitions in photoexcited monoclinic VO 2. SCIENCE ADVANCES 2022; 8:eadd2392. [PMID: 36332024 PMCID: PMC9635820 DOI: 10.1126/sciadv.add2392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Accepted: 09/16/2022] [Indexed: 06/16/2023]
Abstract
Photoexcitation has emerged as an efficient way to trigger phase transitions in strongly correlated materials. There are great controversies about the atomistic mechanisms of structural phase transitions (SPTs) from monoclinic (M1-) to rutile (R-) VO2 and its association with electronic insulator-metal transitions (IMTs). Here, we illustrate the underlying atomistic processes and decoupling nature of photoinduced SPT and IMT in nonequilibrium states. The photoinduced SPT proceeds in the order of dilation of V-V pairs and increase of twisting angles after a small delay of ~40 fs. Dynamic simulations with hybrid functionals confirm the existence of isostructural IMT. The photoinduced SPT and IMT exhibit the same thresholds of electronic excitations, indicating similar fluence thresholds in experiments. The IMT is quasi-instantaneously (<10 fs) generated, while the SPT takes place with time a constant of 100 to 300 fs. These findings clarify some key controversies in the literature and provide insights into nonequilibrium phase transitions in correlated materials.
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Affiliation(s)
- Jiyu Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
| | - Daqiang Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of China
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12
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Basyooni MA, Zaki SE, Tihtih M, Eker YR, Ateş Ş. Photonic bandgap engineering in (VO 2) n/(WSe 2) nphotonic superlattice for versatile near- and mid-infrared phase transition applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:325901. [PMID: 35588726 DOI: 10.1088/1361-648x/ac7189] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Accepted: 05/19/2022] [Indexed: 06/15/2023]
Abstract
The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO2) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO2as a strongly correlated phase transition material and tungsten diselenide (WSe2) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO2with WSe2in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO2layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO2thickness. For the monoclinic case of VO2, the number of the forbidden bands increase with the number of layers of WSe2. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.
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Affiliation(s)
- Mohamed A Basyooni
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey
| | - Shrouk E Zaki
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
| | - Mohammed Tihtih
- Institute of Ceramic and Polymer Engineering, University of Miskolc, Miskolc 3515, Hungary
| | - Yasin Ramazan Eker
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey
- Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya 42060, Turkey
| | - Şule Ateş
- Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey
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13
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Schofield P, Braham EJ, Zhang B, Andrews JL, Drozdick HK, Zhao D, Zaheer W, Gurrola RM, Xie K, Shamberger PJ, Qian X, Banerjee S. Decoupling the metal-insulator transition temperature and hysteresis of VO 2 using Ge alloying and oxygen vacancies. Chem Commun (Camb) 2022; 58:6586-6589. [PMID: 35550650 DOI: 10.1039/d2cc01599d] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The metal-to-insulator transition of VO2 underpins applications in thermochromics, neuromorphic computing, and infrared vision. Ge alloying is shown to elevate the transition temperature by promoting V-V dimerization, thereby expanding the stability of the monoclinic phase to higher temperatures. By suppressing the propensity for oxygen vacancy formation, Ge alloying renders the hysteresis of the transition exquisitely sensitive to oxygen stoichiometry.
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Affiliation(s)
- Parker Schofield
- Department of Chemistry, Texas A&M University, College Station, TX 77843, USA.,Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Erick J Braham
- Department of Chemistry, Texas A&M University, College Station, TX 77843, USA.,Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Baiyu Zhang
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Justin L Andrews
- Department of Chemistry, Texas A&M University, College Station, TX 77843, USA.,Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Hayley K Drozdick
- Department of Chemistry, Texas A&M University, College Station, TX 77843, USA
| | - Dexin Zhao
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Wasif Zaheer
- Department of Chemistry, Texas A&M University, College Station, TX 77843, USA.,Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Rebeca M Gurrola
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Kelvin Xie
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Patrick J Shamberger
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA. .,Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA.
| | - Sarbajit Banerjee
- Department of Chemistry, Texas A&M University, College Station, TX 77843, USA.,Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
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14
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Varadwaj A, Miyake T. Geometrical‐, Electronic‐ and Optical Properties of Vanadium Dioxide: A Theoretical Perspective from Meta‐GGA SCAN. ChemistrySelect 2022. [DOI: 10.1002/slct.202200171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Arpita Varadwaj
- CD-FMat National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki Japan
| | - Takashi Miyake
- CD-FMat National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki Japan
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15
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Dai J, Shi Y, Chen C, Chen X, Zhao C, Chen J. The mechanism of semiconductor to metal transition in the hydrogenation of VO2: A density functional theory study. Phys Chem Chem Phys 2022; 24:5710-5719. [DOI: 10.1039/d1cp03891e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
VO2 is a glamorous material with specific metal-semiconductor-transition (MST). The hydrogenation of VO2 could make it a promising material applying in the ambient environment. In this work, we reveal the...
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16
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Davenport MA, Krogstad MJ, Whitt LM, Hu C, Douglas TC, Ni N, Rosenkranz S, Osborn R, Allred JM. Fragile 3D Order in V_{1-x}Mo_{x}O_{2}. PHYSICAL REVIEW LETTERS 2021; 127:125501. [PMID: 34597061 DOI: 10.1103/physrevlett.127.125501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2019] [Revised: 06/08/2021] [Accepted: 07/21/2021] [Indexed: 06/13/2023]
Abstract
The metal-to-insulator transition in rutile VO_{2} has proven uniquely difficult to characterize because of the complex interplay between electron correlations and atomic structure. Here, we report the discovery of the sudden collapse of three-dimensional order in the low-temperature phase of V_{1-x}Mo_{x}O_{2} at x=0.17 and the emergence of a novel frustrated two-dimensional order at x=0.19, with only a slight change in electronic properties. Single crystal diffuse x-ray scattering reveals that this transition from the 3D M1 phase to a 2D variant of the M2 phase results in long-range structural correlations along symmetry-equivalent (11L) planes of the tetragonal rutile structure, yet extremely short-range correlations transverse to these planes. These findings suggest that this two dimensionality results from a novel form of geometric frustration that is essentially structural in origin.
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Affiliation(s)
- Matthew A Davenport
- Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, Alabama 35487, USA
| | - Matthew J Krogstad
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Logan M Whitt
- Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, Alabama 35487, USA
| | - Chaowei Hu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles California 90095, USA
| | - Tyra C Douglas
- Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, Alabama 35487, USA
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles California 90095, USA
| | - Stephan Rosenkranz
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Raymond Osborn
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Jared M Allred
- Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, Alabama 35487, USA
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17
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Planer J, Mittendorfer F, Redinger J. First principles studies of the electronic and structural properties of the rutile VO 2(110) surface and its oxygen-rich terminations. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:475002. [PMID: 34450615 DOI: 10.1088/1361-648x/ac2203] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Accepted: 08/27/2021] [Indexed: 06/13/2023]
Abstract
We present a density functional theory (DFT) study of the structural and electronic properties of the bare metallic rutile VO2(110) surface and its oxygen-rich terminations. Due to the polyvalent nature of vanadium and abundance of oxide phases, the modelling of this material on the DFT level remains a challenging task. We discuss the performance of various DFT functionals, including PBE, PBE +U(U= 2 eV), SCAN and SCAN + rVV functionals with non-magnetic and ferromagnetic spin ordering, and show that the calculated phase stabilities depend on the chosen functional. We predict the presence of a ring-like termination that is electronically and structurally related to an insulating V2O5(001) monolayer and shows a higher stability than pure oxygen adsorption phases. Our results show that employing the spin-polarized SCAN functional offers a good compromise, as it offers both a reasonable description of the structural and electronic properties of the rutile VO2bulk phase and the enthalpy of formation for oxygen rich vanadium phases present at the surface.
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Affiliation(s)
- J Planer
- Institute of Applied Physics and Center for Computational Materials Science, Vienna University of Technology, Vienna, Austria
| | - F Mittendorfer
- Institute of Applied Physics and Center for Computational Materials Science, Vienna University of Technology, Vienna, Austria
| | - J Redinger
- Institute of Applied Physics and Center for Computational Materials Science, Vienna University of Technology, Vienna, Austria
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18
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Hwang IH, Park CI, Yeo S, Sun CJ, Han SW. Decoupling the metal insulator transition and crystal field effects of VO 2. Sci Rep 2021; 11:3135. [PMID: 33542342 PMCID: PMC7862372 DOI: 10.1038/s41598-021-82588-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2020] [Accepted: 01/18/2021] [Indexed: 11/08/2022] Open
Abstract
VO2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the Tc can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO2 (Cr-VO2 and Co-VO2) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO2 and Co-VO2 films showed sharp MIT features. The Tc values of the Cr-VO2 and Co-VO2 films first decreased and then increased relative to that of pristine VO2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO2 films with a Cr ion flux ≥ 1013 ions/cm2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t2g and eg orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at both vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO2 experiences a sharp MIT when the distance of V-V pairs undergoes an SPT without any transitions in either the VO6 octahedrons or the V 3d t2g and eg states. This indicates that the MIT of VO2 occurs with no changes of the crystal fields.
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Affiliation(s)
- In-Hui Hwang
- Department of Physics Education, Institute of Fusion Science, and Institute of Science Education, Jeonbuk National University, Jeonju, 54896, Korea
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Chang-In Park
- Department of Physics Education, Institute of Fusion Science, and Institute of Science Education, Jeonbuk National University, Jeonju, 54896, Korea
| | - Sunmog Yeo
- Korea Atomic Energy Research Institute, KOMAC, Miraero 181, Gyoungju, 38180, Korea
| | - Cheng-Jun Sun
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Sang-Wook Han
- Department of Physics Education, Institute of Fusion Science, and Institute of Science Education, Jeonbuk National University, Jeonju, 54896, Korea.
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19
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Lee D, Min T, Lee G, Kim J, Song S, Lee J, Bae JS, Kang H, Lee J, Park S. Understanding the Phase Transition Evolution Mechanism of Partially M2 Phased VO 2 Film by Hydrogen Incorporation. J Phys Chem Lett 2020; 11:9680-9688. [PMID: 33135900 DOI: 10.1021/acs.jpclett.0c02592] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Studies on the hydrogen incorporated M1 phase of VO2 film have been widely reported. However, there are few works on an M2 phase of VO2. Recently, the M2 phase in VO2 has received considerable attention due to the possibility of realizing a Mott transition field-effect transistor. By varying the postannealing environment, systematic variations of the M2 phase in (020)-oriented VO2 films grown on Al2O3(0001) were observed. The M2 phase converted to the metallic M1 phase at first and then to the metallic rutile phase after hydrogen annealing (i.e., for H2/N2 mixture and H2 environments). From the diffraction and spectroscopy measurements, the transition is attributed to suppressed electron interactions, not structural modification caused by hydrogen incorporation. Our results suggest the understanding of the phase transition process of the M2 phase by hydrogen incorporation and the possibility of realization of the M2 phased-based Mott transition field-effect transistor.
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Affiliation(s)
- Dooyong Lee
- Department of Physics, Pusan National University, Busan 46241, Korea
- Advanced Nano Surface Research Group, Korea Basic Science Institute, Daejeon 34133, Korea
| | - Taewon Min
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Gongin Lee
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jiwoong Kim
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Sehwan Song
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jisung Lee
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Korea
| | - Jong-Seong Bae
- Busan Center, Korea Basic Science Institute, Busan 46742, Korea
| | - Haeyong Kang
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Korea
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20
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Lee JH, Kim SH, Doh KY, Kim EH, Lee D. First-Principles Investigations to Evaluate the Spin-Polarized Metal-to-Insulator Transition of Halide Cuprite Perovskites for Smart Windows. J Am Chem Soc 2020; 142:14859-14863. [PMID: 32791835 DOI: 10.1021/jacs.0c07529] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Although smart windows have received wide attention as energy-saving devices, conventional metal-to-insulator materials such as VO2 hinder their commercial usage because of their high transition temperature and low solar energy modulation. Further development can be achieved by finding a new material system that can effectively overcome these limitations. In this study, first-principles density functional theory calculations are used to investigate the possibility of exploiting a spin-polarized band gap material for smart window applications. Halide cuprite perovskites (A2CuX4) were chosen because they have a spin-polarized band gap that can be tuned by element selection at sites A and X. Our study shows that the optical transmittance of the insulating phase is increased by a violation of the selection rule. The spin-polarized band gap is closely related to the metal-to-insulator transition temperature and can be modulated by chemical engineering, strain engineering, or both. Therefore, A2CuX4 is a promising candidate for smart windows.
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Affiliation(s)
- June Ho Lee
- Department of Materials Science and Engineering (MSE) and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Seong Hun Kim
- Department of Materials Science and Engineering (MSE) and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Kyung-Yeon Doh
- Department of Materials Science and Engineering (MSE) and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Eun Ho Kim
- Department of Materials Science and Engineering (MSE) and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Donghwa Lee
- Department of Materials Science and Engineering (MSE) and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.,Institute for Convergence Research and Education in Advanced Technology (I_CREATE), Yonsei University, Incheon 21983, Republic of Korea
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21
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All-t2g Electronic Orbital Reconstruction of Monoclinic MoO2 Battery Material. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10175730] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Motivated by experiments, we undertake an investigation of electronic structure reconstruction and its link to electrodynamic responses of monoclinic MoO2. Using a combination of LDA band structure with DMFT for the subspace defined by the physically most relevant Mo 4d-bands, we unearth the importance of multi-orbital electron interactions to MoO2 parent compound. Supported by a microscopic description of quantum capacity we identify the implications of many-particle orbital reconstruction to understanding and evaluating voltage-capacity profiles intrinsic to MoO2 battery material. Therein, we underline the importance of the dielectric function and optical conductivity in the characterisation of existing and candidate battery materials.
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22
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Li Z, Ren Y, Mo L, Liu C, Hsu K, Ding Y, Zhang X, Li X, Hu L, Ji D, Cao G. Impacts of Oxygen Vacancies on Zinc Ion Intercalation in VO 2. ACS NANO 2020; 14:5581-5589. [PMID: 32392033 DOI: 10.1021/acsnano.9b09963] [Citation(s) in RCA: 102] [Impact Index Per Article: 25.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
The aqueous zinc ion battery has emerged as a promising alternative technology for large-scale energy storage due to its low cost, natural abundance, and high safety features. However, the sluggish kinetics stemming from the strong electrostatic interaction of divalent zinc ions in the host crystal structure is one of challenges for highly efficient energy storage. Oxygen vacancies (VO••), in the present work, lead to a larger tunnel structure along the b axis, which improves the reactive kinetics and enhances Zn-ion storage capability in VO2 (B) cathode. DFT calculations further support that VO•• in VO2 (B) result in a narrower bandgap and lower Zn ion diffusion energy barrier compared to those of pristine VO2 (B). VO••-rich VO2 (B) achieves a specific capacity of 375 mAh g-1 at a current density of 100 mA g-1 and long-term cyclic stability with retained specific capacity of 175 mAh g-1 at 5 A g-1 over 2000 cycles (85% capacity retention), higher than that of VO2 (B) nanobelts (280 mAh g-1 at 100 mA g-1 and 120 mAh g-1 at 5 A g-1, 65% capacity retention).
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Affiliation(s)
- Zhaoqian Li
- Key Laboratory of Photovoltaic and Energy Conservation Materials, CAS, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P.R. China
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Yingke Ren
- College of Science, Hebei University of Science and Technology, Shijiazhuang 050018, P.R. China
| | - Lie Mo
- Key Laboratory of Photovoltaic and Energy Conservation Materials, CAS, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P.R. China
| | - Chaofeng Liu
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Kevin Hsu
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Youcai Ding
- Key Laboratory of Photovoltaic and Energy Conservation Materials, CAS, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P.R. China
| | - Xianxi Zhang
- Shandong Provincial Key Laboratory/Collaborative Innovation Center of Chemical Energy Storage & Novel Cell Technology, School of Chemistry and Chemical Engineering, Liaocheng University, Liaocheng 252000, P.R. China
| | - Xiuling Li
- College of Physics and Information Engineering, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang City 050024, P.R. China
| | - Linhua Hu
- Key Laboratory of Photovoltaic and Energy Conservation Materials, CAS, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P.R. China
| | - Denghui Ji
- College of Physics, Mechanical and Electronical College, Shijiazhuang University, Shijiazhuang City 050035, P.R. China
| | - Guozhong Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
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23
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Paez GJ, Singh CN, Wahila MJ, Tirpak KE, Quackenbush NF, Sallis S, Paik H, Liang Y, Schlom DG, Lee TL, Schlueter C, Lee WC, Piper LFJ. Simultaneous Structural and Electronic Transitions in Epitaxial VO_{2}/TiO_{2}(001). PHYSICAL REVIEW LETTERS 2020; 124:196402. [PMID: 32469580 DOI: 10.1103/physrevlett.124.196402] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2019] [Revised: 02/21/2020] [Accepted: 04/21/2020] [Indexed: 06/11/2023]
Abstract
Recent reports have identified new metaphases of VO_{2} with strain and/or doping, suggesting the structural phase transition and the metal-to-insulator transition might be decoupled. Using epitaxially strained VO_{2}/TiO_{2} (001) thin films, which display a bulklike abrupt metal-to-insulator transition and rutile to monoclinic transition structural phase transition, we employ x-ray standing waves combined with hard x-ray photoelectron spectroscopy to simultaneously measure the structural and electronic transitions. This x-ray standing waves study elegantly demonstrates the structural and electronic transitions occur concurrently within experimental limits (±1 K).
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Affiliation(s)
- Galo J Paez
- Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA
| | - Christopher N Singh
- Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA
| | - Matthew J Wahila
- Materials Science and Engineering, Binghamton University, State University of New York, Binghamton, New York 13850, USA
| | - Keith E Tirpak
- Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA
| | - Nicholas F Quackenbush
- Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA
| | - Shawn Sallis
- Materials Science and Engineering, Binghamton University, State University of New York, Binghamton, New York 13850, USA
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA
| | - Yufeng Liang
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - Tien-Lin Lee
- Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom
| | - Christoph Schlueter
- Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom
| | - Wei-Cheng Lee
- Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA
| | - Louis F J Piper
- Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA
- Materials Science and Engineering, Binghamton University, State University of New York, Binghamton, New York 13850, USA
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24
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Galicia-Hernandez JM, Turkowski V, Hernandez-Cocoletzi G, Rahman TS. Electron correlations and memory effects in ultrafast electron and hole dynamics in VO 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:20LT01. [PMID: 31978897 DOI: 10.1088/1361-648x/ab6f85] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
By applying an approach based on time-dependent density functional theory and dynamical mean-field theory (TDDFT+DMFT) we examine the role of electron correlations in the ultrafast breakdown of the insulating M1 phase in bulk VO2. We consider the case of a spatially homogeneous ultrafast (femtosecond) laser pulse perturbation and present the dynamics of the melting of the insulating state, in particular the time-dependence of the excited charge density. The time-dependence of the chemical potential of the excited electron and hole subsystems shows that even for such short times the dynamics of the system is significantly affected by memory effects-the time-resolved electron-electron interactions. The results pave the way for obtaining a microscopic understanding of the ultrafast dynamics of strongly-correlated materials.
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Affiliation(s)
- Jose Mario Galicia-Hernandez
- Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America. Instituto de Fisica Ing. Luis Rivera Terrazas, Benemerita Universidad Autonoma de Puebla, Puebla 72550, Mexico
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25
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Kim HS, Haule K, Vanderbilt D. Mott Metal-Insulator Transitions in Pressurized Layered Trichalcogenides. PHYSICAL REVIEW LETTERS 2019; 123:236401. [PMID: 31868467 DOI: 10.1103/physrevlett.123.236401] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2018] [Revised: 09/17/2019] [Indexed: 06/10/2023]
Abstract
Transition metal phosphorous trichalcogenides, MPX_{3} (M and X being transition metal and chalcogen elements, respectively), have been the focus of substantial interest recently because they are unusual candidates undergoing Mott transition in the two-dimensional limit. Here we investigate material properties of the compounds with M=Mn and Ni employing ab initio density functional and dynamical mean-field calculations, especially their electronic behavior under external pressure in the paramagnetic phase. Mott metal-insulator transitions (MIT) are found to be a common feature for both compounds, but their lattice structures show drastically different behaviors depending on the relevant orbital degrees of freedom, i.e., t_{2g} or e_{g}. Under pressure, MnPS_{3} can undergo an isosymmetric structural transition within monoclinic space group by forming Mn-Mn dimers due to the strong direct overlap between the neighboring t_{2g} orbitals, accompanied by a significant volume collapse and a spin-state transition. In contrast, NiPS_{3} and NiPSe_{3}, with their active e_{g} orbital degrees of freedom, do not show a structural change at the MIT pressure or deep in the metallic phase within the monoclinic symmetry. Hence NiPS_{3} and NiPSe_{3} become rare examples of materials hosting electronic bandwidth-controlled Mott MITs, thus showing promise for ultrafast resistivity switching behavior.
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Affiliation(s)
- Heung-Sik Kim
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
- Department of Physics, Kangwon National University, Chuncheon 24341, Korea
| | - Kristjan Haule
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
| | - David Vanderbilt
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
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Andrews JL, Santos DA, Meyyappan M, Williams RS, Banerjee S. Building Brain-Inspired Logic Circuits from Dynamically Switchable Transition-Metal Oxides. TRENDS IN CHEMISTRY 2019. [DOI: 10.1016/j.trechm.2019.07.005] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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Otto MR, René de Cotret LP, Valverde-Chavez DA, Tiwari KL, Émond N, Chaker M, Cooke DG, Siwick BJ. How optical excitation controls the structure and properties of vanadium dioxide. Proc Natl Acad Sci U S A 2019; 116:450-455. [PMID: 30587594 PMCID: PMC6329972 DOI: 10.1073/pnas.1808414115] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
We combine ultrafast electron diffraction and time-resolved terahertz spectroscopy measurements to link structure and electronic transport properties during the photoinduced insulator-metal transitions in vanadium dioxide. We determine the structure of the metastable monoclinic metal phase, which exhibits antiferroelectric charge order arising from a thermally activated, orbital-selective phase transition in the electron system. The relative contribution of the photoinduced monoclinic and rutile metals to the time-dependent and pump-fluence-dependent multiphase character of the film is established, as is the respective impact of these two distinct phase transitions on the observed changes in terahertz conductivity. Our results represent an important example of how light can control the properties of strongly correlated materials and demonstrate that multimodal experiments are essential when seeking a detailed connection between ultrafast changes in optical-electronic properties and lattice structure.
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Affiliation(s)
- Martin R Otto
- Department of Physics, Center for the Physics of Materials, McGill University, Montreal, QC, Canada H3A 2T8;
| | - Laurent P René de Cotret
- Department of Physics, Center for the Physics of Materials, McGill University, Montreal, QC, Canada H3A 2T8
| | - David A Valverde-Chavez
- Department of Physics, Center for the Physics of Materials, McGill University, Montreal, QC, Canada H3A 2T8
| | - Kunal L Tiwari
- Department of Physics, Center for the Physics of Materials, McGill University, Montreal, QC, Canada H3A 2T8
| | - Nicolas Émond
- Institut National de la Recherche Scientifique, Centre Énergie Matériaux et Télécommunications, Université du Québec, Varennes, QC, Canada J3X 1S2
| | - Mohamed Chaker
- Institut National de la Recherche Scientifique, Centre Énergie Matériaux et Télécommunications, Université du Québec, Varennes, QC, Canada J3X 1S2
| | - David G Cooke
- Department of Physics, Center for the Physics of Materials, McGill University, Montreal, QC, Canada H3A 2T8
| | - Bradley J Siwick
- Department of Physics, Center for the Physics of Materials, McGill University, Montreal, QC, Canada H3A 2T8
- Department of Chemistry, McGill University, Montreal, QC, Canada H3A 0B8
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28
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Laverock J, Jovic V, Zakharov AA, Niu YR, Kittiwatanakul S, Westhenry B, Lu JW, Wolf SA, Smith KE. Observation of Weakened V-V Dimers in the Monoclinic Metallic Phase of Strained VO_{2}. PHYSICAL REVIEW LETTERS 2018; 121:256403. [PMID: 30608778 DOI: 10.1103/physrevlett.121.256403] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2018] [Revised: 10/04/2018] [Indexed: 06/09/2023]
Abstract
Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO_{2} represents periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT, we unexpectedly find the long-range order of V-V dimer strength and crystal symmetry become dissociated beyond ≈200 nm, whereas the conductivity transition proceeds homogeneously in a narrow temperature range.
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Affiliation(s)
- J Laverock
- H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom
- Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
| | - V Jovic
- School of Chemical Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Auckland, Auckland 1142, New Zealand
| | - A A Zakharov
- MAX-lab, Lund University, SE-221 00 Lund, Sweden
| | - Y R Niu
- MAX-lab, Lund University, SE-221 00 Lund, Sweden
| | - S Kittiwatanakul
- Department of Materials Science and Engineering, University of Virginia, Charlottesville,Virginia 22904, USA
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330, Thailand
| | - B Westhenry
- H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom
| | - J W Lu
- Department of Materials Science and Engineering, University of Virginia, Charlottesville,Virginia 22904, USA
| | - S A Wolf
- Department of Materials Science and Engineering, University of Virginia, Charlottesville,Virginia 22904, USA
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
| | - K E Smith
- Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
- School of Chemical Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Auckland, Auckland 1142, New Zealand
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Abstract
Correlated electron materials display a rich variety of notable properties ranging from unconventional superconductivity to metal-insulator transitions. These properties are of interest from the point of view of applications but are hard to treat theoretically, as they result from multiple competing energy scales. Although possible in more weakly correlated materials, theoretical design and spectroscopy of strongly correlated electron materials have been a difficult challenge for many years. By treating all the relevant energy scales with sufficient accuracy, complementary advances in Green's functions and quantum Monte Carlo methods open a path to first-principles computational property predictions in this class of materials.
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Affiliation(s)
- Paul R C Kent
- Computational Sciences and Engineering Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Gabriel Kotliar
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA. .,Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ 08854, USA
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30
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Han Q, Birol T, Haule K. Phonon Softening due to Melting of the Ferromagnetic Order in Elemental Iron. PHYSICAL REVIEW LETTERS 2018; 120:187203. [PMID: 29775328 DOI: 10.1103/physrevlett.120.187203] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2017] [Revised: 01/03/2018] [Indexed: 06/08/2023]
Abstract
We study the fundamental question of the lattice dynamics of a metallic ferromagnet in the regime where the static long-range magnetic order is replaced by the fluctuating local moments embedded in a metallic host. We use the ab initio density functional theory + embedded dynamical mean-field theory functional approach to address the dynamic stability of iron polymorphs and the phonon softening with an increased temperature. We show that the nonharmonic and inhomogeneous phonon softening measured in iron is a result of the melting of the long-range ferromagnetic order and is unrelated to the first-order structural transition from the bcc to the fcc phase, as is usually assumed. We predict that the bcc structure is dynamically stable at all temperatures at normal pressure and is thermodynamically unstable only between the bcc-α and the bcc-δ phases of iron.
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Affiliation(s)
- Qiang Han
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
| | - Turan Birol
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Kristjan Haule
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
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31
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Kulish VV, Koch D, Manzhos S. Ab initio study of Li, Mg and Al insertion into rutile VO 2: fast diffusion and enhanced voltages for multivalent batteries. Phys Chem Chem Phys 2018; 19:22538-22545. [PMID: 28809972 DOI: 10.1039/c7cp04360k] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Vanadium oxides are among the most promising materials that can be used as electrodes in rechargeable metal-ion batteries. In this work, we systematically investigate thermodynamic, electronic, and kinetic properties associated with the insertion of Li, Mg and Al atoms into rutile VO2. Using first-principles calculations, we systematically study the structural evolution and voltage curves of LixVO2, MgxVO2 and AlxVO2 (0 < x < 1) compounds. The calculated lithium intercalation voltage starts at 3.50 V for single-atom insertion and decreases to 2.23 V for full lithiation, to the LiVO2 compound, which agrees well with the experimental results. The Mg insertion features a plateau about 1.6 V up to Mg0.5VO2 and then another plateau-like region at around 0.5 V up to Mg1VO2. The predicted voltage curve for Al insertion starts at 1.98 V, followed by two plateaus at 1.48 V and 1.17 V. The diffusion barrier of Li, Mg and Al in the tunnel structure of VO2 is 0.06, 0.33 and 0.50 eV, respectively. The demonstrated excellent Li, Mg and Al mobility, high structural stability and high specific capacity suggest promising potential of rutile VO2 electrodes especially for multivalent batteries.
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Affiliation(s)
- Vadym V Kulish
- Department of Mechanical Engineering, Faculty of Engineering, National University of Singapore, Block EA #07-08, 9 Engineering Drive 1, Singapore 117576.
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32
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Mott transition in chain structure of strained VO 2 films revealed by coherent phonons. Sci Rep 2017; 7:16038. [PMID: 29167488 PMCID: PMC5700180 DOI: 10.1038/s41598-017-16188-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2017] [Accepted: 11/08/2017] [Indexed: 11/11/2022] Open
Abstract
The characteristic of strongly correlated materials is the Mott transition between metal and insulator (MIT or IMT) in the same crystalline structure, indicating the presence of a gap formed by the Coulomb interaction between carriers. The physics of the transition needs to be revealed. Using VO2, as a model material, we observe the emergence of a metallic chain in the intermediate insulating monoclinic structure (M2 phase) of epitaxial strained films, proving the Mott transition involving the breakdown of the critical Coulomb interaction. It is revealed by measuring the temperature dynamics of coherent optical phonons with separated vibrational modes originated from two substructures in M2: one is the charge-density-wave, formed by electron-phonon (e-ph) interaction, and the other is the equally spaced insulator-chain with electron-electron (e-e) correlations.
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33
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Fleer NA, Pelcher KE, Zou J, Nieto K, Douglas LD, Sellers DG, Banerjee S. Hybrid Nanocomposite Films Comprising Dispersed VO 2 Nanocrystals: A Scalable Aqueous-Phase Route to Thermochromic Fenestration. ACS APPLIED MATERIALS & INTERFACES 2017; 9:38887-38900. [PMID: 29039916 DOI: 10.1021/acsami.7b09779] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Buildings consume an inordinate amount of energy, accounting for 30-40% of worldwide energy consumption. A major portion of solar radiation is transmitted directly to building interiors through windows, skylights, and glazed doors where the resulting solar heat gain necessitates increased use of air conditioning. Current technologies aimed at addressing this problem suffer from major drawbacks, including a reduction in the transmission of visible light, thereby resulting in increased use of artificial lighting. Since currently used coatings are temperature-invariant in terms of their solar heat gain modulation, they are unable to offset cold-weather heating costs that would otherwise have resulted from solar heat gain. There is considerable interest in the development of plastic fenestration elements that can dynamically modulate solar heat gain based on the external climate and are retrofittable onto existing structures. The metal-insulator transition of VO2 is accompanied by a pronounced modulation of near-infrared transmittance as a function of temperature and can potentially be harnessed for this purpose. Here, we demonstrate that a nanocomposite thin film embedded with well dispersed sub-100-nm diameter VO2 nanocrystals exhibits a combination of high visible light transmittance, effective near-infrared suppression, and onset of NIR modulation at wavelengths <800 nm. In our approach, hydrothermally grown VO2 nanocrystals with <100 nm diameters are dispersed within a methacrylic acid/ethyl acrylate copolymer after either (i) grafting of silanes to constitute an amorphous SiO2 shell or (ii) surface functionalization with perfluorinated silanes and the use of a perfluorooctanesulfonate surfactant. Homogeneous and high optical quality thin films are cast from aqueous dispersions of the pH-sensitive nanocomposites onto glass. An entirely aqueous-phase process for preparation of nanocrystals and their effective dispersion within polymeric nanocomposites allows for realization of scalable and viable plastic fenestration elements.
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Affiliation(s)
- Nathan A Fleer
- Department of Chemistry, Texas A&M University , College Station, Texas 77842-3012, United States
- Department of Materials Science and Engineering, Texas A&M University , College Station, Texas 77843-3003, United States
| | - Kate E Pelcher
- Department of Chemistry, Texas A&M University , College Station, Texas 77842-3012, United States
- Department of Materials Science and Engineering, Texas A&M University , College Station, Texas 77843-3003, United States
| | - Jian Zou
- Department of Chemistry, Texas A&M University , College Station, Texas 77842-3012, United States
- Department of Materials Science and Engineering, Texas A&M University , College Station, Texas 77843-3003, United States
| | - Kelly Nieto
- Department of Chemistry, Texas A&M University , College Station, Texas 77842-3012, United States
- Department of Materials Science and Engineering, Texas A&M University , College Station, Texas 77843-3003, United States
| | - Lacey D Douglas
- Department of Chemistry, Texas A&M University , College Station, Texas 77842-3012, United States
- Department of Materials Science and Engineering, Texas A&M University , College Station, Texas 77843-3003, United States
| | - Diane G Sellers
- Department of Chemistry, Texas A&M University , College Station, Texas 77842-3012, United States
- Department of Materials Science and Engineering, Texas A&M University , College Station, Texas 77843-3003, United States
| | - Sarbajit Banerjee
- Department of Chemistry, Texas A&M University , College Station, Texas 77842-3012, United States
- Department of Materials Science and Engineering, Texas A&M University , College Station, Texas 77843-3003, United States
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34
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Photoinduced Strain Release and Phase Transition Dynamics of Solid-Supported Ultrathin Vanadium Dioxide. Sci Rep 2017; 7:10045. [PMID: 28855670 PMCID: PMC5577108 DOI: 10.1038/s41598-017-10217-0] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2017] [Accepted: 08/04/2017] [Indexed: 11/22/2022] Open
Abstract
The complex phase transitions of vanadium dioxide (VO2) have drawn continual attention for more than five decades. Dynamically, ultrafast electron diffraction (UED) with atomic-scale spatiotemporal resolution has been employed to study the reaction pathway in the photoinduced transition of VO2, using bulk and strain-free specimens. Here, we report the UED results from 10-nm-thick crystalline VO2 supported on Al2O3(0001) and examine the influence of surface stress on the photoinduced structural transformation. An ultrafast release of the compressive strain along the surface-normal direction is observed at early times following the photoexcitation, accompanied by faster motions of vanadium dimers that are more complex than simple dilation or bond tilting. Diffraction simulations indicate that the reaction intermediate involved on picosecond times may not be a single state, which implies non-concerted atomic motions on a multidimensional energy landscape. At longer times, a laser fluence multiple times higher than the thermodynamic enthalpy threshold is required for complete conversion from the initial monoclinic structure to the tetragonal lattice. For certain crystalline domains, the structural transformation is not seen even on nanosecond times following an intense photoexcitation. These results signify a time-dependent energy distribution among various degrees of freedom and reveal the nature of and the impact of strain on the photoinduced transition of VO2.
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35
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Tolhurst TM, Andrews JL, Leedahl B, Marley PM, Banerjee S, Moewes A. Structure-Induced Switching of the Band Gap, Charge Order, and Correlation Strength in Ternary Vanadium Oxide Bronzes. Chemistry 2017; 23:9846-9856. [PMID: 28543976 DOI: 10.1002/chem.201700962] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2017] [Indexed: 11/08/2022]
Abstract
Recently, V2 O5 nanowires have been synthesized as several different polymorphs, and as correlated bronzes with cations intercalated between the layers of edge- and corner- sharing VO6 octahedra. Unlike extended crystals, which tend to be plagued by substantial local variations in stoichiometry, nanowires of correlated bronzes exhibit precise charge ordering, thereby giving rise to pronounced electron correlation effects. These developments have greatly broadened the scope of research, and promise applications in several frontier electronic devices that make use of novel computing vectors. Here a study is presented of δ-Srx V2 O5 , expanded δ-Srx V2 O5 , exfoliated δ-Srx V2 O5 and δ-Kx V2 O5 using a combination of synchrotron soft X-ray spectroscopy and density functional theory calculations. The band gaps of each system are experimentally determined, and their calculated electronic structures are discussed from the perspective of the measured spectra. Band gaps ranging from 0.66 ± 0.20 to 2.32 ± 0.20 eV are found, and linked to the underlying structure of each material. This demonstrates that the band gap of V2 O5 can be tuned across a large portion of the range of greatest interest for device applications. The potential for metal-insulator transitions, tuneable electron correlations and charge ordering in these systems is discussed within the framework of our measurements and calculations, while highlighting the structure-property relationships that underpin them.
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Affiliation(s)
- Thomas M Tolhurst
- Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon Saskatchewan, S7N 5E2, Canada
| | - Justin L Andrews
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
| | - Brett Leedahl
- Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon Saskatchewan, S7N 5E2, Canada
| | - Peter M Marley
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
| | - Sarbajit Banerjee
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
| | - Alexander Moewes
- Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon Saskatchewan, S7N 5E2, Canada
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Imaging metal-like monoclinic phase stabilized by surface coordination effect in vanadium dioxide nanobeam. Nat Commun 2017; 8:15561. [PMID: 28613281 PMCID: PMC5474733 DOI: 10.1038/ncomms15561] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2016] [Accepted: 04/05/2017] [Indexed: 11/24/2022] Open
Abstract
In correlated systems, intermediate states usually appear transiently across phase transitions even at the femtosecond scale. It therefore remains an open question how to determine these intermediate states—a critical issue for understanding the origin of their correlated behaviour. Here we report a surface coordination route to successfully stabilize and directly image an intermediate state in the metal-insulator transition of vanadium dioxide. As a prototype metal-insulator transition material, we capture an unusual metal-like monoclinic phase at room temperature that has long been predicted. Coordinate bonding of L-ascorbic acid molecules with vanadium dioxide nanobeams induces charge-carrier density reorganization and stabilizes metallic monoclinic vanadium dioxide, unravelling orbital-selective Mott correlation for gap opening of the vanadium dioxide metal–insulator transition. Our study contributes to completing phase-evolution pathways in the metal-insulator transition process, and we anticipate that coordination chemistry may be a powerful tool for engineering properties of low-dimensional correlated solids. Identifying intermediates during phase transitions is critical for our understanding of correlated materials, but difficult to achieve experimentally. Here, the authors report a surface coordination route to stabilize and directly image a phase-transition intermediate during the metal-insulator transition in vanadium dioxide.
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Fisher B, Patlagan L. Switching VO₂ Single Crystals and Related Phenomena: Sliding Domains and Crack Formation. MATERIALS 2017; 10:ma10050554. [PMID: 28772918 PMCID: PMC5459034 DOI: 10.3390/ma10050554] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/24/2017] [Revised: 05/09/2017] [Accepted: 05/11/2017] [Indexed: 11/16/2022]
Abstract
VO2 is the prototype material for insulator–metal transition (IMT). Its transition at TIMT = 340 K is fast and consists of a large resistance jump (up to approximately five orders of magnitude), a large change in its optical properties in the visible range, and symmetry change from monoclinic to tetragonal (expansion by 1% along the tetragonal c-axis and 0.5% contraction in the perpendicular direction). It is a candidate for potential applications such as smart windows, fast optoelectronic switches, and field-effect transistors. The change in optical properties at the IMT allows distinguishing between the insulating and the metallic phases in the mixed state. Static or dynamic domain patterns in the mixed-state of self-heated single crystals during electric-field induced switching are in strong contrast with the percolative nature of the mixed state in switching VO2 films. The most impressive effect—so far unique to VO2—is the sliding of narrow semiconducting domains within a metallic background in the positive sense of the electric current. Here we show images from videos obtained using optical microscopy for sliding domains along VO2 needles and confirm a relation suggested in the past for their velocity. We also show images for the disturbing damage induced by the structural changes in switching VO2 crystals obtained for only a few current–voltage cycles.
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