1
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Mou Y, Chen H, Liu J, Lan Q, Wang J, Zhang C, Wang Y, Gu J, Zhao T, Jiang X, Shi W, Zhang C. Gate-Tunable Quantum Acoustoelectric Transport in Graphene. NANO LETTERS 2024; 24:4625-4632. [PMID: 38568748 DOI: 10.1021/acs.nanolett.4c00774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Transport probes the motion of quasi-particles in response to external excitations. Apart from the well-known electric and thermoelectric transport, acoustoelectric transport induced by traveling acoustic waves has rarely been explored. Here, by adopting hybrid nanodevices integrated with piezoelectric substrates, we establish a simple design of acoustoelectric transport with gate tunability. We fabricate dual-gated acoustoelectric devices based on hBN-encapsulated graphene on LiNbO3. Longitudinal and transverse acoustoelectric voltages are generated by launching a pulsed surface acoustic wave. The gate dependence of zero-field longitudinal acoustoelectric signal presents strikingly similar profiles to that of Hall resistivity, providing a valid approach for extracting carrier density without magnetic field. In magnetic fields, acoustoelectric quantum oscillations appear due to Landau quantization, which are more robust and pronounced than Shubnikov-de Haas oscillations. Our work demonstrates a feasible acoustoelectric setup with gate tunability, which can be extended to the broad scope of various van der Waals materials.
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Affiliation(s)
- Yicheng Mou
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Haonan Chen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jiaqi Liu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Qing Lan
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jiayu Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Chuanxin Zhang
- Department of Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Yuxiang Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jiaming Gu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Tuoyu Zhao
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Xue Jiang
- Department of Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Wu Shi
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
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2
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Yamada A, Fuseya Y. Quantum-classical correspondence and dissipative to dissipationless crossover in magnetotransport phenomena. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:245702. [PMID: 38437730 DOI: 10.1088/1361-648x/ad2ff0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 03/04/2024] [Indexed: 03/06/2024]
Abstract
The three-dimensional magneto-conductivity tensor was derived in a gauge invariant form based on the Kubo formula considering quantum effects under a magnetic field, such as the Landau quantization and quantum oscillations. We analytically demonstrated that the quantum formula of the magneto-conductivity can be obtained by adding a quantum oscillation factor to the classical formula. This result establishes the quantum-classical correspondence, which has long been missing in magnetotransport phenomena. Moreover, we found dissipative-to-dissipationless crossover in the Hall conductivity by paying special attention to the analytic properties of the thermal Green's function. Finally, by calculating the magnetoresistance of semimetals, we identified a phase shift in quantum oscillation originating from the dissipationless transport predominant at high fields.
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Affiliation(s)
- Akiyoshi Yamada
- The Institute for Solid State Physics, the University of Tokyo, Chiba 277-8581, Japan
- Department of Engineering Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
| | - Yuki Fuseya
- Department of Engineering Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
- Institute for Advanced Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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3
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Zhao TY, Wang AQ, Ye XG, Liu XY, Liao X, Liao ZM. Gate-Tunable Berry Curvature Dipole Polarizability in Dirac Semimetal Cd_{3}As_{2}. PHYSICAL REVIEW LETTERS 2023; 131:186302. [PMID: 37977647 DOI: 10.1103/physrevlett.131.186302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2022] [Revised: 07/10/2023] [Accepted: 10/13/2023] [Indexed: 11/19/2023]
Abstract
We reveal the gate-tunable Berry curvature dipole polarizability in Dirac semimetal Cd_{3}As_{2} nanoplates through measurements of the third-order nonlinear Hall effect. Under an applied electric field, the Berry curvature exhibits an asymmetric distribution, forming a field-induced Berry curvature dipole, resulting in a measurable third-order Hall voltage with a cubic relationship to the longitudinal electric field. Notably, the magnitude and polarity of this third-order nonlinear Hall effect can be effectively modulated by gate voltages. Furthermore, our scaling relation analysis demonstrates that the sign of the Berry curvature dipole polarizability changes when tuning the Fermi level across the Dirac point, in agreement with theoretical calculations. The results highlight the gate control of nonlinear quantum transport in Dirac semimetals, paving the way for promising advancements in topological electronics.
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Affiliation(s)
- Tong-Yang Zhao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - An-Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - Xing-Guo Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - Xing-Yu Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - Xin Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
| | - Zhi-Min Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China
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4
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Xu X, Yin JX, Ma W, Tien HJ, Qiang XB, Reddy PVS, Zhou H, Shen J, Lu HZ, Chang TR, Qu Z, Jia S. Topological charge-entropy scaling in kagome Chern magnet TbMn6Sn6. Nat Commun 2022; 13:1197. [PMID: 35256604 PMCID: PMC8901788 DOI: 10.1038/s41467-022-28796-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/05/2021] [Accepted: 01/26/2022] [Indexed: 11/09/2022] Open
Abstract
AbstractIn ordinary materials, electrons conduct both electricity and heat, where their charge-entropy relations observe the Mott formula and the Wiedemann-Franz law. In topological quantum materials, the transverse motion of relativistic electrons can be strongly affected by the quantum field arising around the topological fermions, where a simple model description of their charge-entropy relations remains elusive. Here we report the topological charge-entropy scaling in the kagome Chern magnet TbMn6Sn6, featuring pristine Mn kagome lattices with strong out-of-plane magnetization. Through both electric and thermoelectric transports, we observe quantum oscillations with a nontrivial Berry phase, a large Fermi velocity and two-dimensionality, supporting the existence of Dirac fermions in the magnetic kagome lattice. This quantum magnet further exhibits large anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects, all of which persist to above room temperature. Remarkably, we show that the charge-entropy scaling relations of these anomalous transverse transports can be ubiquitously described by the Berry curvature field effects in a Chern-gapped Dirac model. Our work points to a model kagome Chern magnet for the proof-of-principle elaboration of the topological charge-entropy scaling.
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5
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Wang J, Jiang Y, Zhao T, Dun Z, Miettinen AL, Wu X, Mourigal M, Zhou H, Pan W, Smirnov D, Jiang Z. Magneto-transport evidence for strong topological insulator phase in ZrTe 5. Nat Commun 2021; 12:6758. [PMID: 34799584 PMCID: PMC8604917 DOI: 10.1038/s41467-021-27119-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Accepted: 11/02/2021] [Indexed: 11/09/2022] Open
Abstract
The identification of a non-trivial band topology usually relies on directly probing the protected surface/edge states. But, it is difficult to achieve electronically in narrow-gap topological materials due to the small (meV) energy scales. Here, we demonstrate that band inversion, a crucial ingredient of the non-trivial band topology, can serve as an alternative, experimentally accessible indicator. We show that an inverted band can lead to a four-fold splitting of the non-zero Landau levels, contrasting the two-fold splitting (spin splitting only) in the normal band. We confirm our predictions in magneto-transport experiments on a narrow-gap strong topological insulator, zirconium pentatelluride (ZrTe5), with the observation of additional splittings in the quantum oscillations and also an anomalous peak in the extreme quantum limit. Our work establishes an effective strategy for identifying the band inversion as well as the associated topological phases for future topological materials research.
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Affiliation(s)
- Jingyue Wang
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, 100871, Beijing, China
| | - Yuxuan Jiang
- School of Physics and Optoelectronics Engineering, Anhui University, 230601, Hefei, Anhui, China.
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.
| | - Tianhao Zhao
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Zhiling Dun
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Anna L Miettinen
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Xiaosong Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, 100871, Beijing, China
| | - Martin Mourigal
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Haidong Zhou
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Wei Pan
- Quantum and Electronic Materials Department, Sandia National Laboratories, Livermore, CA, 94551, USA
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Zhigang Jiang
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
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6
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Lee SE, Oh MJ, Ji S, Kim J, Jun JH, Kang W, Jo Y, Jung MH. Orbit topology analyzed from π phase shift of magnetic quantum oscillations in three-dimensional Dirac semimetal. Proc Natl Acad Sci U S A 2021; 118:e2023027118. [PMID: 34266947 PMCID: PMC8307846 DOI: 10.1073/pnas.2023027118] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
With the emergence of Dirac fermion physics in the field of condensed matter, magnetic quantum oscillations (MQOs) have been used to discern the topology of orbits in Dirac materials. However, many previous researchers have relied on the single-orbit Lifshitz-Kosevich (LK) formula, which overlooks the significant effect of degenerate orbits on MQOs. Since the single-orbit LK formula is valid for massless Dirac semimetals with small cyclotron masses, it is imperative to generalize the method applicable to a wide range of Dirac semimetals, whether massless or massive. This report demonstrates how spin-degenerate orbits affect the phases in MQOs of three-dimensional massive Dirac semimetal, NbSb2 With varying the direction of the magnetic field, an abrupt π phase shift is observed due to the interference between the spin-degenerate orbits. We investigate the effect of cyclotron mass on the π phase shift and verify its close relation to the phase from the Zeeman coupling. We find that the π phase shift occurs when the cyclotron mass is half of the electron mass, indicating the effective spin gyromagnetic ratio as g s = 2. Our approach is not only useful for analyzing MQOs of massless Dirac semimetals with a small cyclotron mass but also can be used for MQOs in massive Dirac materials with degenerate orbits, especially in topological materials with a sufficiently large cyclotron mass. Furthermore, this method provides a useful way to estimate the precise g s value of the material.
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Affiliation(s)
- Sang-Eon Lee
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Myeong-Jun Oh
- Department of Physics, Kyungpook National University, Daegu 41566, Korea
| | - Sanghyun Ji
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jinsu Kim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jin-Hyeon Jun
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Woun Kang
- Department of Physics, Ewha Womans University, Seoul 03760, Korea
| | - Younjung Jo
- Department of Physics, Kyungpook National University, Daegu 41566, Korea;
| | - Myung-Hwa Jung
- Department of Physics, Sogang University, Seoul 04107, Korea;
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7
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Ma W, Xu X, Yin JX, Yang H, Zhou H, Cheng ZJ, Huang Y, Qu Z, Wang F, Hasan MZ, Jia S. Rare Earth Engineering in RMn_{6}Sn_{6} (R=Gd-Tm, Lu) Topological Kagome Magnets. PHYSICAL REVIEW LETTERS 2021; 126:246602. [PMID: 34213939 DOI: 10.1103/physrevlett.126.246602] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2020] [Accepted: 05/20/2021] [Indexed: 05/25/2023]
Abstract
Exploration of the topological quantum materials with electron correlation is at the frontier of physics, as the strong interaction may give rise to new topological phases and transitions. Here we report that a family of kagome magnets RMn_{6}Sn_{6} manifest the quantum transport properties analogical to those in the quantum-limit Chern magnet TbMn_{6}Sn_{6}. The topological transport in the family, including quantum oscillations with nontrivial Berry phase and large anomalous Hall effect arising from Berry curvature field, points to the existence of Chern gapped Dirac fermions. Our observation demonstrates a close relationship between rare-earth magnetism and topological electron structure, indicating the rare-earth elements can effectively engineer the Chern quantum phase in kagome magnets.
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Affiliation(s)
- Wenlong Ma
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xitong Xu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Hui Yang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Huibin Zhou
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zi-Jia Cheng
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Yuqing Huang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhe Qu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
- CAS Key Laboratory of Photovoltaic and Energy Conservation Materials, Hefei Institutes of Physical Sciences, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Fa Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, West Building 3, No. 10 Xibeiwang East Road, Haidian District, Beijing 100193, China
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8
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Wu J, Wang CM. Anisotropic magnetotransport in tilted magnetic topological semimetals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:165701. [PMID: 33498034 DOI: 10.1088/1361-648x/abdff5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2020] [Accepted: 01/26/2021] [Indexed: 06/12/2023]
Abstract
We systematically investigate the anisotropic magneto-conductivity and planar Hall effect in tilted magnetic topological semimetals in the frame of Kubo formula by considering the vertex correction of velocity. The nonzero anisotropic magneto-conductivity is due to the intrinsic magnetization by magnetic doping rather than the external magnetic field previously studied in literatures. In the scenario, tilt, which is common in band structure, plays a key role in this anisotropic magneto-conductivity. This anisotropic magneto-conductivity completely originates from the band anisotropy. The vertex correction only amends the magnitude, but does not change the qualitative behavior of the longitudinal conductivity. However, the planar Hall conductivity is always zero for tilt along bothxandydirections in vivid contrast to the case arising from an external magnetic field. Our work offers a route to understand the anisotropic magneto-conductivity effect in tilted Weyl semimetals with Zeeman field. It will be helpful to get a deeper understanding of the transport characteristic in tilted topological semimetals.
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Affiliation(s)
- J Wu
- Department of Physics, Shanghai Normal University, Shanghai 200234, People's Republic of China
| | - C M Wang
- Department of Physics, Shanghai Normal University, Shanghai 200234, People's Republic of China
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, People's Republic of China
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9
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Kumar N, Guin SN, Manna K, Shekhar C, Felser C. Topological Quantum Materials from the Viewpoint of Chemistry. Chem Rev 2021; 121:2780-2815. [PMID: 33151662 PMCID: PMC7953380 DOI: 10.1021/acs.chemrev.0c00732] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Indexed: 11/29/2022]
Abstract
Topology, a mathematical concept, has recently become a popular and truly transdisciplinary topic encompassing condensed matter physics, solid state chemistry, and materials science. Since there is a direct connection between real space, namely atoms, valence electrons, bonds, and orbitals, and reciprocal space, namely bands and Fermi surfaces, via symmetry and topology, classifying topological materials within a single-particle picture is possible. Currently, most materials are classified as trivial insulators, semimetals, and metals or as topological insulators, Dirac and Weyl nodal-line semimetals, and topological metals. The key ingredients for topology are certain symmetries, the inert pair effect of the outer electrons leading to inversion of the conduction and valence bands, and spin-orbit coupling. This review presents the topological concepts related to solids from the viewpoint of a solid-state chemist, summarizes techniques for growing single crystals, and describes basic physical property measurement techniques to characterize topological materials beyond their structure and provide examples of such materials. Finally, a brief outlook on the impact of topology in other areas of chemistry is provided at the end of the article.
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Affiliation(s)
- Nitesh Kumar
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Satya N. Guin
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Kaustuv Manna
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Chandra Shekhar
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
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10
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Wang AQ, Ye XG, Yu DP, Liao ZM. Topological Semimetal Nanostructures: From Properties to Topotronics. ACS NANO 2020; 14:3755-3778. [PMID: 32286783 DOI: 10.1021/acsnano.9b07990] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.
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Affiliation(s)
- An-Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Xing-Guo Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Da-Peng Yu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhi-Min Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, China
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11
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Wang X, Ding G, Cheng Z, Surucu G, Wang XL, Yang T. Rich topological nodal line bulk states together with drum-head-like surface states in NaAlGe with anti-PbFCl type structure. J Adv Res 2020; 23:95-100. [PMID: 32257430 PMCID: PMC7109329 DOI: 10.1016/j.jare.2020.01.017] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2019] [Revised: 01/23/2020] [Accepted: 01/30/2020] [Indexed: 12/02/2022] Open
Abstract
The band topology in condensed matter has attracted widespread attention in recent years. Due to the band inversion, topological nodal line semimetals (TNLSs) have band crossing points (BCPs) around the Fermi level, forming a nodal line. In this work, by means of first-principles, we observe that the synthesized NaAlGe intermetallic compound with anti-PbFCl type structure is a TNLS with four NLs in the kz = 0 and kz = π planes. All these NLs in NaAlGe exist around the Fermi level, and what is more, these NLs do not overlap with other bands. The exotic drum-head-like surface states can be clearly observed, and therefore, the surface characteristics of NaAlGe may more easily be detected by experiments. Biaxial strain has been explored for this system, and our results show that rich TNL states can be induced. Furthermore, the spin-orbit coupling effect has little effect on the band structure of NaAlGe. It is hoped that this unique band structure can soon be examined by experimental work and that its novel topological elements can be fully explored for electronic devices.
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Affiliation(s)
- Xiaotian Wang
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia
| | - Guangqian Ding
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia
| | - Gokhan Surucu
- Department of Physics, Middle East Technical University, Turkey.,Department of Electric and Energy, Ahi Evran University, Turkey
| | - Xiao-Lin Wang
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.,ARC Centre of Excellence in Future Low Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, NSW 2500, Australia
| | - Tie Yang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
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12
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Superconductivity and Shubnikov - de Haas effect in polycrystalline Cd 3As 2 thin films. Sci Rep 2020; 10:4601. [PMID: 32165644 PMCID: PMC7067877 DOI: 10.1038/s41598-020-61376-6] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2019] [Accepted: 02/21/2020] [Indexed: 11/16/2022] Open
Abstract
In this study we observed the reproducible superconducting state in Cd3As2 thin films without any external stimuli. Comparison with our previous results reveals similar qualitative behavior for films synthesized by different methods, while the difference in the values of the critical parameters clearly shows the possibility to control this state. The X-ray diffraction measurements demonstrate the presence of the tetragonal Cd3As2 crystal phase in studied films. Measurements of high-field magnetoresistance reveal pronounced Shubnikov - de Haas oscillations. The analysis of these oscillations suggests that, due to high carrier concentration in studied Cd3As2 films, the initial Dirac semimetal phase may be partially suppressed, which, however, does not contradict with possible topological nature of the observed superconductivity.
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13
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Wang X, Ding G, Cheng Z, Surucu G, Wang XL, Yang T. Novel topological nodal lines and exotic drum-head-like surface states in synthesized CsCl-type binary alloy TiOs. J Adv Res 2020; 22:137-144. [PMID: 31956448 PMCID: PMC6961224 DOI: 10.1016/j.jare.2019.12.001] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2019] [Revised: 11/18/2019] [Accepted: 12/05/2019] [Indexed: 11/22/2022] Open
Abstract
Very recently, searching for new topological nodal line semimetals (TNLSs) and drum-head-like (DHL) surface states has become a hot topic in the field of physical chemistry of materials. Via first principles, in this study, a synthesized CsCl type binary alloy, TiOs, was predicted to be a TNLS with three topological nodal lines (TNLs) centered at the X point in the kx/y/z = π plane, and these TNLs, which are protected by mirror, time reversal (T) and spatial inversion (P) symmetries, are perpendicular to one another. The exotic drum-head-like (DHL) surface states can be clearly observed inside and outside the crossing points (CPs) in the bulk system. The CPs, TNLs, and DHL surface states of TiOs are very robust under the influences of uniform strain, electron doping, and hole doping. Spin-orbit coupling (SOC)-induced gaps can be found in this TiOs system when the SOC is taken into consideration. When the SOC is involved, surface Dirac cones can be found in this system, indicating that the topological properties are still maintained. Similar to TiOs, ZrOs and HfOs alloys are TNLSs under the Perdew-Burke-Ernzerhof method. The CPs and the TNLs in both alloys disappear, however, under the Heyd-Scuseria-Ernzerhof method. It is hoped that the DHL surface property in TiOs can be detected by surface sensitive probes in the near future.
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Affiliation(s)
- Xiaotian Wang
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia
| | - Guangqian Ding
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia
| | - Gokhan Surucu
- Department of Physics, Middle East Technical University, Turkey
- Department of Electric and Energy, Ahi Evran University, Turkey
| | - Xiao-Lin Wang
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia
- ARC centre of Excellence in Future Low Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, NSW 2500, Australia
| | - Tie Yang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
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14
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Datta B, Adak PC, Shi LK, Watanabe K, Taniguchi T, Song JCW, Deshmukh MM. Nontrivial quantum oscillation geometric phase shift in a trivial band. SCIENCE ADVANCES 2019; 5:eaax6550. [PMID: 31667347 PMCID: PMC6799982 DOI: 10.1126/sciadv.aax6550] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2019] [Accepted: 09/20/2019] [Indexed: 06/10/2023]
Abstract
Quantum oscillations provide a notable visualization of the Fermi surface of metals, including associated geometrical phases such as Berry's phase, that play a central role in topological quantum materials. Here we report the existence of a new quantum oscillation phase shift in a multiband system. In particular, we study the ABA-trilayer graphene, the band structure of which is composed of a weakly gapped linear Dirac band, nested within a quadratic band. We observe that Shubnikov-de Haas (SdH) oscillations of the quadratic band are shifted by a phase that sharply departs from the expected 2π Berry's phase and is inherited from the nontrivial Berry's phase of the linear band. We find this arises due to an unusual filling enforced constraint between the quadratic band and linear band Fermi surfaces. Our work indicates how additional bands can be exploited to tease out the effect of often subtle quantum mechanical geometric phases.
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Affiliation(s)
- Biswajit Datta
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Pratap Chandra Adak
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Li-kun Shi
- Institute of High Performance Computing, Agency for Science, Technology, and Research, Singapore 138632, Singapore
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Justin C. W. Song
- Institute of High Performance Computing, Agency for Science, Technology, and Research, Singapore 138632, Singapore
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Singapore
| | - Mandar M. Deshmukh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
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15
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Bobin SB, Lonchakov AT, Deryushkin VV, Neverov VN. Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:115701. [PMID: 30625443 DOI: 10.1088/1361-648x/aafcf4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this paper, the authors report the results of an experimental study of effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations of transverse magnetoresistance in an extended electron concentration region from 8.8 × 1015 cm-3 to 4.3 × 1018 cm-3 in single crystals of mercury selenide. The revealed features indicate that Weyl semimetal phase may exist in HgSe at low electron density. The most significant result is the discovery of an abrupt change of Berry phase [Formula: see text] at electron concentration [Formula: see text] 2 × 1018 cm-3, which we explain in terms of a manifestation of topological Lifshitz transition in HgSe that occurs by tuning Fermi energy via doping.
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Affiliation(s)
- S B Bobin
- M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Yekaterinburg, Russia
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16
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Zhang CL, Wang CM, Yuan Z, Xu X, Wang G, Lee CC, Pi L, Xi C, Lin H, Harrison N, Lu HZ, Zhang J, Jia S. Non-saturating quantum magnetization in Weyl semimetal TaAs. Nat Commun 2019; 10:1028. [PMID: 30833678 PMCID: PMC6399290 DOI: 10.1038/s41467-019-09012-4] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2017] [Accepted: 02/12/2019] [Indexed: 11/30/2022] Open
Abstract
Detecting the spectroscopic signatures of relativistic quasiparticles in emergent topological materials is crucial for searching their potential applications. Magnetometry is a powerful tool for fathoming electrons in solids, by which a clear method for discerning relativistic quasiparticles has not yet been established. Adopting the probes of magnetic torque and parallel magnetization for the archetype Weyl semimetal TaAs in strong magnetic field, we observed a quasi-linear field dependent effective transverse magnetization and a non-saturating parallel magnetization when the system enters the quantum limit. Distinct from the saturating magnetic responses for non-relativistic quasiparticles, the non-saturating signals of TaAs in strong field is consistent with our newly developed magnetization calculation for a Weyl fermion system in an arbitrary angle. Our results establish a high-field thermodynamic method for detecting the magnetic response of relativistic quasiparticles in topological materials.
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Affiliation(s)
- Cheng-Long Zhang
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - C M Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, 518055, Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, 518055, Shenzhen, China
- Department of Physics, Shanghai Normal University, 200234, Shanghai, China
| | - Zhujun Yuan
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Xitong Xu
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Guangqiang Wang
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Chi-Cheng Lee
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Li Pi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, 230031, China
| | - Changying Xi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, 230031, China
| | - Hsin Lin
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Neil Harrison
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, MS E536, Los Alamos, NM, 87545, USA
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, 518055, Shenzhen, China.
- Shenzhen Key Laboratory of Quantum Science and Engineering, 518055, Shenzhen, China.
- Center for Quantum Computing, Pengcheng Laboratory, 518055, Shenzhen, China.
| | - Jinglei Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, 230031, China.
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China.
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, 100190, Beijing, China.
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17
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Abstract
One of the characteristics of topological materials is their nontrivial Berry phase. Experimental determination of this phase largely relies on a phase analysis of quantum oscillations. We study the angular dependence of the oscillations in a Dirac material [Formula: see text] and observe a striking spin-zero effect (i.e., vanishing oscillations accompanied with a phase inversion). This indicates that the Berry phase in [Formula: see text] remains nontrivial for arbitrary field direction, in contrast with previous reports. The Zeeman splitting is found to be proportional to the magnetic field based on the condition for the spin-zero effect in a Dirac band. Moreover, it is suggested that the Dirac band in [Formula: see text] is likely transformed into a line node other than Weyl points for the field directions at which the spin zero occurs. The results underline a largely overlooked spin factor when determining the Berry phase from quantum oscillations.
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18
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Pavlosiuk O, Kaczorowski D. Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe 2. Sci Rep 2018; 8:11297. [PMID: 30050089 PMCID: PMC6062631 DOI: 10.1038/s41598-018-29545-w] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2018] [Accepted: 07/09/2018] [Indexed: 11/09/2022] Open
Abstract
Platinum ditelluride has recently been characterized, based on angle-resolved photoemission spectroscopy data and electronic band structure calculations, as a possible representative of type-II Dirac semimetals. Here, we report on the magnetotransport behavior (electrical resistivity, Hall effect) in this compound, investigated on high-quality single-crystalline specimens. The magnetoresistance (MR) of PtTe2 is large (over 3000% at T = 1.8 K in B = 9 T) and unsaturated in strong fields in the entire temperature range studied. The MR isotherms obey a Kohler’s type scaling with the exponent m = 1.69, different from the case of ideal electron-hole compensation. In applied magnetic fields, the resistivity shows a low-temperature plateau, characteristic of topological semimetals. In strong fields, well-resolved Shubnikov – de Haas (SdH) oscillations with two principle frequencies were found, and their analysis yielded charge mobilities of the order of 103 cm2 V−1 s−1 and rather small effective masses of charge carriers, 0.11 me and 0.21 me. However, the extracted Berry phases point to trivial character of the electronic bands involved in the SdH oscillations. The Hall effect data corroborated a multi-band character of the electrical conductivity in PtTe2, with moderate charge compensation.
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Affiliation(s)
- Orest Pavlosiuk
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P. O. Box 1410, 50-950 Wrocław, Poland
| | - Dariusz Kaczorowski
- Institute of Molecular Physics, Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznań, Poland.
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19
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Chen KW, Lian X, Lai Y, Aryal N, Chiu YC, Lan W, Graf D, Manousakis E, Baumbach RE, Balicas L. Bulk Fermi Surfaces of the Dirac Type-II Semimetallic Candidates MAl_{3} (Where M=V, Nb, and Ta). PHYSICAL REVIEW LETTERS 2018; 120:206401. [PMID: 29864304 DOI: 10.1103/physrevlett.120.206401] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2018] [Indexed: 06/08/2023]
Abstract
We report a de Haas-van Alphen (dHvA) effect study on the Dirac type-II semimetallic candidates MAl_{3} (where, M=V, Nb and Ta). The angular dependence of their Fermi surface (FS) cross-sectional areas reveals a remarkably good agreement with our first-principles calculations. Therefore, dHvA supports the existence of tilted Dirac cones with Dirac type-II nodes located at 100, 230 and 250 meV above the Fermi level ϵ_{F} for VAl_{3}, NbAl_{3} and TaAl_{3} respectively, in agreement with the prediction of broken Lorentz invariance in these compounds. However, for all three compounds we find that the cyclotron orbits on their FSs, including an orbit nearly enclosing the Dirac type-II node, yield trivial Berry phases. We explain this via an analysis of the Berry phase where the position of this orbit, relative to the Dirac node, is adjusted within the error implied by the small disagreement between our calculations and the experiments. We suggest that a very small amount of doping could displace ϵ_{F} to produce topologically nontrivial orbits encircling their Dirac node(s).
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Affiliation(s)
- K-W Chen
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
| | - X Lian
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
| | - Y Lai
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
| | - N Aryal
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
| | - Y-C Chiu
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
| | - W Lan
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
| | - D Graf
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
| | - E Manousakis
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
| | - R E Baumbach
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
| | - L Balicas
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
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20
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Zhang C, Lu HZ, Shen SQ, Chen YP, Xiu F. Towards the manipulation of topological states of matter: a perspective from electron transport. Sci Bull (Beijing) 2018; 63:580-594. [PMID: 36658845 DOI: 10.1016/j.scib.2018.04.007] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2018] [Revised: 04/02/2018] [Accepted: 04/04/2018] [Indexed: 01/21/2023]
Abstract
The introduction of topological invariants, ranging from insulators to metals, has provided new insights into the traditional classification of electronic states in condensed matter physics. A sudden change in the topological invariant at the boundary of a topological nontrivial system leads to the formation of exotic surface states that are dramatically different from its bulk. In recent years, significant advancements in the exploration of the physical properties of these topological systems and regarding device research related to spintronics and quantum computation have been made. Here, we review the progress of the characterization and manipulation of topological phases from the electron transport perspective and also the intriguing chiral/Majorana states that stem from them. We then discuss the future directions of research into these topological states and their potential applications.
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Affiliation(s)
- Cheng Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Hai-Zhou Lu
- Institute for Quantum Science and Engineering and Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China; Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - Shun-Qing Shen
- Department of Physics, The University of Hong Kong, Hong Kong, China
| | - Yong P Chen
- Department of Physics and Astronomy, Purdue University, West Lafayette 47907, USA; Birck Nanotechnology Center, Purdue University, West Lafayette 47907, USA; School of Electrical and Computer Engineering, Purdue University, West Lafayette 47907, USA
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China; Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
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21
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Li C, Wang CM, Wan B, Wan X, Lu HZ, Xie XC. Rules for Phase Shifts of Quantum Oscillations in Topological Nodal-Line Semimetals. PHYSICAL REVIEW LETTERS 2018; 120:146602. [PMID: 29694159 DOI: 10.1103/physrevlett.120.146602] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2017] [Revised: 03/01/2018] [Indexed: 05/12/2023]
Abstract
Nodal-line semimetals are topological semimetals in which band touchings form nodal lines or rings. Around a loop that encloses a nodal line, an electron can accumulate a nontrivial π Berry phase, so the phase shift in the Shubnikov-de Haas (SdH) oscillation may give a transport signature for the nodal-line semimetals. However, different experiments have reported contradictory phase shifts, in particular, in the WHM nodal-line semimetals (W=Zr/Hf, H=Si/Ge, M=S/Se/Te). For a generic model of nodal-line semimetals, we present a systematic calculation for the SdH oscillation of resistivity under a magnetic field normal to the nodal-line plane. From the analytical result of the resistivity, we extract general rules to determine the phase shifts for arbitrary cases and apply them to ZrSiS and Cu_{3}PdN systems. Depending on the magnetic field directions, carrier types, and cross sections of the Fermi surface, the phase shift shows rich results, quite different from those for normal electrons and Weyl fermions. Our results may help explore transport signatures of topological nodal-line semimetals and can be generalized to other topological phases of matter.
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Affiliation(s)
- Cequn Li
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - C M Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China
| | - Bo Wan
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Xiangang Wan
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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22
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Uchida M, Nakazawa Y, Nishihaya S, Akiba K, Kriener M, Kozuka Y, Miyake A, Taguchi Y, Tokunaga M, Nagaosa N, Tokura Y, Kawasaki M. Quantum Hall states observed in thin films of Dirac semimetal Cd 3As 2. Nat Commun 2017; 8:2274. [PMID: 29273770 PMCID: PMC5741620 DOI: 10.1038/s41467-017-02423-1] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2017] [Accepted: 11/29/2017] [Indexed: 11/09/2022] Open
Abstract
A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases.
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Affiliation(s)
- Masaki Uchida
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Tokyo, 113-8656, Japan.
| | - Yusuke Nakazawa
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Tokyo, 113-8656, Japan
| | - Shinichi Nishihaya
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Tokyo, 113-8656, Japan
| | - Kazuto Akiba
- The Institute for Solid State Physics, the University of Tokyo, Kashiwa, 277-8581, Japan
| | - Markus Kriener
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Yusuke Kozuka
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Tokyo, 113-8656, Japan
| | - Atsushi Miyake
- The Institute for Solid State Physics, the University of Tokyo, Kashiwa, 277-8581, Japan
| | - Yasujiro Taguchi
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Masashi Tokunaga
- The Institute for Solid State Physics, the University of Tokyo, Kashiwa, 277-8581, Japan
| | - Naoto Nagaosa
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Tokyo, 113-8656, Japan.,RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Yoshinori Tokura
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Tokyo, 113-8656, Japan.,RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Masashi Kawasaki
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Tokyo, 113-8656, Japan.,RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
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23
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Zhang C, Narayan A, Lu S, Zhang J, Zhang H, Ni Z, Yuan X, Liu Y, Park JH, Zhang E, Wang W, Liu S, Cheng L, Pi L, Sheng Z, Sanvito S, Xiu F. Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd 3As 2. Nat Commun 2017; 8:1272. [PMID: 29097658 PMCID: PMC5668429 DOI: 10.1038/s41467-017-01438-y] [Citation(s) in RCA: 94] [Impact Index Per Article: 13.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2017] [Accepted: 09/14/2017] [Indexed: 11/09/2022] Open
Abstract
Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in the surface states known as Weyl orbit. Here, by lowering the carrier density in Cd3As2 nanoplates, we observe a crossover from multiple-frequency to single-frequency Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic field, indicating the dominant role of surface transport. With the increase of magnetic field, the SdH oscillations further develop into quantum Hall state with non-vanishing longitudinal resistance. By tracking the oscillation frequency and Hall plateau, we observe a Zeeman-related splitting and extract the Landau level index as well as sub-band number. Different from conventional two-dimensional systems, this unique quantum Hall effect may be related to the quantized version of Weyl orbits. Our results call for further investigations into the exotic quantum Hall states in the low-dimensional structure of topological semimetals.
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Affiliation(s)
- Cheng Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Awadhesh Narayan
- School of Physics, CRANN and AMBER, Trinity College, Dublin, 2, Ireland
- Department of Physics, University of Illinois at Urbana-Champaign, Champaign, 61801, IL, USA
| | - Shiheng Lu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Jinglei Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, 230031, Hefei, China
| | - Huiqin Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Zhuoliang Ni
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Xiang Yuan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Yanwen Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Ju-Hyun Park
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Weiyi Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Long Cheng
- High Magnetic Field Laboratory, Chinese Academy of Sciences, 230031, Hefei, China
| | - Li Pi
- High Magnetic Field Laboratory, Chinese Academy of Sciences, 230031, Hefei, China
| | - Zhigao Sheng
- High Magnetic Field Laboratory, Chinese Academy of Sciences, 230031, Hefei, China
| | - Stefano Sanvito
- School of Physics, CRANN and AMBER, Trinity College, Dublin, 2, Ireland
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China.
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24
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Gao W, Hao N, Zheng FW, Ning W, Wu M, Zhu X, Zheng G, Zhang J, Lu J, Zhang H, Xi C, Yang J, Du H, Zhang P, Zhang Y, Tian M. Extremely Large Magnetoresistance in a Topological Semimetal Candidate Pyrite PtBi_{2}. PHYSICAL REVIEW LETTERS 2017; 118:256601. [PMID: 28696743 DOI: 10.1103/physrevlett.118.256601] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2016] [Indexed: 06/07/2023]
Abstract
While pyrite-type PtBi_{2} with a face-centered cubic structure has been predicted to be a three-dimensional (3D) Dirac semimetal, experimental study of its physical properties remains absent. Here we report the angular-dependent magnetoresistance measurements of a PtBi_{2} single crystal under high magnetic fields. We observed extremely large unsaturated magnetoresistance (XMR) up to (11.2×10^{6})% at T=1.8 K in a magnetic field of 33 T, which is comparable to the previously reported Dirac materials, such as WTe_{2}, LaSb, and NbP. The crystals exhibit an ultrahigh mobility and significant Shubnikov-de Hass quantum oscillations with a nontrivial Berry phase. The analysis of Hall resistivity indicates that the XMR can be ascribed to the nearly compensated electron and hole. Our experimental results associated with the ab initio calculations suggest that pyrite PtBi_{2} is a topological semimetal candidate that might provide a platform for exploring topological materials with XMR in noble metal alloys.
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Affiliation(s)
- Wenshuai Gao
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
- Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Ningning Hao
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
| | - Fa-Wei Zheng
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, People's Republic of China
| | - Wei Ning
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
| | - Min Wu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
- Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Xiangde Zhu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
| | - Guolin Zheng
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
- Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Jinglei Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
| | - Jianwei Lu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
- Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Hongwei Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
- Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Chuanying Xi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
| | - Jiyong Yang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
| | - Haifeng Du
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
| | - Ping Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, People's Republic of China
- Beijing Computational Science Research Center, Beijing 100193, People's Republic of China
| | - Yuheng Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Mingliang Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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25
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Abstract
Topological semimetals are systems in which conduction and valence bands cross each other and the crossings are protected by topological constraints. These materials provide intriguing tests for fundamental theories, while their unique physical properties promise a wide range of possible applications in low-power spintronics, optoelectronics, quantum computing and green energy harvesting. Here we report our study of the thermoelectric power of single-crystalline ZrSiS that is believed to be a topological nodal-line semimetal. We show that the thermoelectric power is an extremely sensitive probe of multiple quantum oscillations that are visible in ZrSiS at temperatures as high as 100 K. Two of these oscillations are shown to arise from three- and two-dimensional electronic bands, each with linear dispersion and the additional Berry phase predicted theoretically for materials with non-trivial topology. Our work not only provides further information on ZrSiS but also suggests a different route for studying other topological semimetals.
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