Compensated Semimetal LaSb with Unsaturated Magnetoresistance

Electronic structure in a transition metal dipnictide TaAs2

The family of transition-metal dipnictides has been of theoretical and experimental interest because this family hosts topological states and extremely large magnetoresistance (MR). Recently,TaAs2, a member of this family, has been predicted to support a topological crystalline insulating state. Here, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal both closed and open pockets in the metallic Fermi surface (FS) and linearly dispersive bands on the (2‾01) surface, along with the presence of extreme MR observed from magneto-transport measurements. A comparison of the ARPES results with first-principles computations shows that the linearly dispersive bands on the measured surface ofTaAs2are trivial bulk bands. The absence of symmetry-protected surface state on the (2‾01) surface indicates its topologically dark nature. The presence of open FS features suggests that the open-orbit fermiology could contribute to the extremely large MR ofTaAs2.

Emerging Nontrivial Topology in Ultrathin Films of Rare-Earth Pnictides

Thin films of rare-earth monopnictide (RE-V) semimetals are expected to turn into semiconductors due to quantum confinement effects (QCE), lifting the overlap between electron pockets at Brillouin zone edges (X) and hole pockets at the zone center (Γ). Instead, using LaSb as an example, we find the emergence of the quantum spin Hall (QSH) insulator phase in (001)-oriented films as the thickness is reduced to 7, 5, or 3 monolayers (MLs). This is attributed to a strong QCE on the in-plane electron pockets and the lack of quantum confinement on the out-of-plane pocket projected onto the zone center, resulting in a band inversion. Spin-orbit coupling (SOC) opens a sizable nontrivial gap in the band structure of ultrathin films. Such effect is anticipated to be general in rare-earth monopnictides and may lead to interesting phenomena when coupled with the 4f magnetic moments present in other members of this family of materials.

Anisotropic magnetoresistance and electronic features of the candidate topological compound praseodymium monobismuthide

PrBi, a sister member of the rare-earth monopnictide family, is an excellent candidate for studying extreme magnetoresistance and nontrivial topological electronic states. In this study, we perform angular magnetoresistance measurements as well as bulk and surface band structure calculations on this compound. PrBi's magnetoresistance is revealed to be significantly angle-dependent and shows a fourfold symmetry as always observed in the nonmagnetic isostructural counterparts, including LaSb, LaBi, and LuBi. Its angular magnetoresistance can be reproduced well using the semiclassical two-band model. The deduced parameters suggest that PrBi hosts an elongated electron pocket with a mobility anisotropy of ∼3.13 and is slightly uncompensated in its carrier concentration. Our bulk and surface band structure calculations confirm the anisotropic electronic features. Moreover, we reveal that a nodal-line-shaped surface state appears at the X̄ point, and is associated with the quadratic dispersion along the -X̄ direction, and the linear type-I Dirac dispersion along the X̄-M̄ direction. Owing to the type-I Dirac dispersion feature, PrBi could serve as a promising material platform for studying many unexpected physical properties, such as the highly anisotropic transport and valley polarization of electrons.

A two-dimensional topological nodal-line material MgN4 with extremely large magnetoresistance

Using first-principles calculations, we predict a stable two-dimensional atomically thin material MgN₄. This material has a perfect intrinsic electron-hole compensation characteristic with high carrier mobility, making it a promising candidate material with extremely large magnetoresistance. As the magnetic field increases, the magnetoresistance of the monolayer MgN₄ will show a quadratic dependence on the strength of the magnetic field without saturation. Furthermore, nontrivial topological properties are also found in this material. In the absence of spin-orbit coupling, the monolayer MgN₄ belongs to a topological nodal-line material, in which the band crossings form a closed saddle-shape nodal-ring near the Fermi level in the Brillouin zone. Once the spin-orbit coupling is considered, a small local energy gap is opened along the nodal ring, resulting in a topological insulator defined on a curved Fermi surface with ₂ = 1. The combination of two-dimensional single-atomic-layer thickness, an extremely large magnetoresistance effect, and topological non-trivial properties in the monolayer MgN₄ makes it an excellent platform for designing novel multi-functional devices.

Pressure induced topological and topological crystalline insulators

Research on topological and topological crystalline insulators (TCIs) is one of the most intense and exciting topics due to its fascinating fundamental science and potential technological applications. Pressure (strain) is one potential pathway to induce the non-trivial topological phases in some topologically trivial (normal) insulating or semiconducting materials. In the last ten years, there have been substantial theoretical and experimental efforts from condensed-matter scientists to characterize and understand pressure-induced topological quantum phase transitions (TQPTs). In particular, a promising enhancement of the thermoelectric performance through pressure-induced TQPT has been recently realized; thus evidencing the importance of this subject in society. Since the pressure effect can be mimicked by chemical doping or substitution in many cases, these results have opened a new route to develop more efficient materials for harvesting green energy at ambient conditions. Therefore, a detailed understanding of the mechanism of pressure-induced TQPTs in various classes of materials with spin-orbit interaction is crucial to improve their properties for technological implementations. Hence, this review focuses on the emerging area of pressure-induced TQPTs to provide a comprehensive understanding of this subject from both theoretical and experimental points of view. In particular, it covers the Raman signatures of detecting the topological transitions (under pressure), some of the important pressure-induced topological and TCIs of the various classes of spin-orbit coupling materials, and provide future research directions in this interesting field.

Materials and possible mechanisms of extremely large magnetoresistance: a review

Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as -90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnetic scattering and thus resistance. In recent years, some new systems have shown an extremely large unsaturated MR (XMR). Unlike ordinary metals, the positive MR of these systems can reach 10³%-10⁸% and is persistent under super high magnetic fields. The XMR materials are mainly metals or semimetals, distributed in high-mobility topological or non-topological systems, and some are magnetic, which suggests a wide range of application scenarios. Various mechanisms have been proposed for the potential physical origin of XMR, including electron-hole compensation, steep band, ultrahigh mobility, high residual resistance ratio, topological fermions, etc. It turns out that some mechanisms play a leading role in certain systems, while more are far from clearly defined. In addition, the researches on XMR are largely overlapped or closely correlated with other recently rising physics and materials researches, such as topological matters and two-dimensional (2D) materials, which makes elucidating the mechanism of XMR even more important. Moreover, the disclosed novel properties will lay a broad and solid foundation for the design and development of functional devices. In this review, we will discuss several aspects in the following order: (I) introduction, (II) XMR materials and classification, (III) proposed mechanisms for XMR, (IV) correlation with other systems (featured), and (V) conclusions and outlook.

First-principles study of strain effect on the thermoelectric properties of LaP and LaAs

Rare-earth monopnictides have attracted much attention due to their unusual electronic and topological properties for potential device applications. Here, we study rock-salt structured lanthanum monopnictides LaX (X = P, As) by density functional theory (DFT) simulations. We show systematically that a meta-GGA functional combined with scissor correction can efficiently and accurately compute the electronic structures on a fine DFT k-grid, which is necessary for converging thermoelectric calculations. We also show that strain engineering can effectively improve the thermoelectric performance. Under the optimal conditions of 2% isotropic tensile strain and carrier concentration n = 3 × 10²⁰ cm^-3, LaP at a temperature of 1200 K can achieve a figure of merit ZT value >2, which is enhanced by 90% compared to the unstrained value. With carrier doping and strain engineering, lanthanum monopnictides thereby could be promising high-temperature thermoelectric materials.

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.

Observation of gapped state in rare-earth monopnictide HoSb

The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy, magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the [Formula: see text] and X-symmetry points of the Brillouin zone, we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb.

High thermoelectric efficiency of LaX (X = Sb, Bi) two dimensional topological insulators

Topological insulators with novel surfaces or edge states are the topological nature sequel of bulk electronic wave functions of these materials. The observed signatures in the electronic structure of topological insulators can make them excellent candidates for thermoelectric materials. Low dimensional materials such as phosphorene and Bi₂Te₃ nanowire have been confirmed to be desirable for the design of devices with high thermoelectric performance. So in this work, the phonon modes, formation energy and cohesive energy of LaX (X  =  Sb, Bi) monolayers are first calculated and investigated. Then the band order of these monolayers is investigated by the band structure calculations and the topological phase of these monolayers is proved by using the calculation of Z ₂ topological invariant. The energy band gap and the band inversion strength of these monolayers are evaluated under in-plane strains. Also, the effect of different temperatures and in-plane strains on the thermoelectric performance of LaX monolayers is studied. The results show the high thermoelectric efficiency and d-p topological band inversion of these monolayers under compressive strains.

Pressure effect on the magnetoresistivity of topological semimetal RhSn

RhSn is a topological semimetal with chiral fermions. At ambient pressure, it exhibits large positive magnetoresistance (MR) and field-induced resistivity upturn at low temperatures. Here we report on the electrical transport properties of RhSn single crystal under various pressures. We find that with increasing pressure the temperature-dependent resistivityρ(T) of RhSn varies minutely, whereas the value of MR at low temperatures decreases significantly. Theρ(T) data was fitted with the Bloch-Grüneisen model and the Debye temperature was extracted. Analyses of the nonlinear Hall conductivity with two-band model indicate that the carrier concentrations do not change significantly with pressure, but the mobilities for both electron and hole carriers are reduced monotonically, which can account for the significant reduction of MR under high pressures.

Revealing 'plasmaron' feature in DySb by optical spectroscopy study

We report magnetic susceptibility, resistivity and optical spectroscopy study on single crystal sample DySb. It exhibits extremely large magnetoresistance (XMR), and a magnetic phase transition from paramagnetic (PM) to antiferromagnetic (AFM) state at about 10 K. A 'screened' plasma edge at about 4000 cm^-1 is revealed by optical measurement, which suggests that the material has a low carrier density. With decreasing temperature, the 'screened' plasma edge shows a blue shift, possibly due to a decrease of the effective mass of carriers. Notably, an anomalous temperature dependent midinfrared absorption feature is observed in the vicinity of the 'screened' plasma edge. In addition, it can be connected to the inflection point in the real part of the dielectric function [Formula: see text], the frequency of which exactly tracks the temperature dependent 'screened' plasma frequency. This phenomena can be explained by the appearance of a coupled electron-plasmon 'plasmaron' feature.

First principles investigation of topological phase in XMR material TmSb under hydrostatic pressure

In this article, we report emergence of topological phase in extremely large magnetoresistance (XMR) material TmSb under hydrostatic pressure using first principles calculations. We find that TmSb, a topologically trivial semimetal, undergoes a topological phase transition with band inversion at X point without breaking any symmetry under a hydrostatic pressure of 12 GPa. At 15 GPa, it again becomes topologically trivial with band inversion at [Formula: see text] as well as X point. We find that the pressures corresponding to the topological phase transitions are far below the pressure corresponding to structural phase transition at 25.5 GPa. The reentrant behaviour of topological quantum phase with hydrostatic pressure would help in finding a correlation between topology and XMR effects through experiments.

Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb

The charge and spin of the electrons in solids have been extensively exploited in electronic devices and in the development of spintronics. Another attribute of electrons—their orbital nature—is attracting growing interest for understanding exotic phenomena and in creating the next-generation of quantum devices such as orbital qubits. Here, we report on orbital-flop induced magnetoresistance anisotropy in CeSb. In the low temperature high magnetic-field driven ferromagnetic state, a series of additional minima appear in the angle-dependent magnetoresistance. These minima arise from the anisotropic magnetization originating from orbital-flops and from the enhanced electron scattering from magnetic multidomains formed around the first-order orbital-flop transition. The measured magnetization anisotropy can be accounted for with a phenomenological model involving orbital-flops and a spin-valve-like structure is used to demonstrate the viable utilization of orbital-flop phenomenon. Our results showcase a contribution of orbital behavior in the emergence of intriguing phenomena.

The orbital degree of freedom can be as important as the charge and spin of the electron to the electronic phenomena. Here the authors show additional minimum in the angle-dependent magnetoresistance (MR) for the low temperature high magnetic field driven ferromagnetic state in CeSb which indicates the orbital flop induced MR anisotropy.

Bulk band inversion and surface Dirac cones in LaSb and LaBi: Prediction of a new topological heterostructure

We perform ab initio investigations of the bulk and surface band structures of LaSb and LaBi and resolve the existing disagreements about the topological property of LaSb, considering LaBi as a reference. We examine the bulk band structure for band inversion, along with the stability of surface Dirac cones (if any) to time-reversal-preserving perturbations, as a strong diagnostic test for determining the topological character of LaSb, LaBi and LaSb-LaBi multilayer. A detailed ab initio investigation of a multilayer consisting of alternating unit cells of LaSb and LaBi shows the presence of band inversion in the bulk and a massless Dirac cone on the (001) surface, which remains stable under the influence of time-reversal-preserving perturbations, thus confirming the topologically non-trivial nature of the multilayer in which the electronic properties can be tailored as per requirement. A detailed [Formula: see text] invariant calculation is performed to arrive at a holistic conclusion.

Nonsaturating large magnetoresistance in semimetals

The rapidly expanding class of quantum materials known as topological semimetals (TSMs) displays unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. So far, many possible sources of extraordinarily large nonsaturating magnetoresistance have been proposed. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility (χ), the tangent of the Hall angle ([Formula: see text]), along with magnetoresistance in four different nonmagnetic semimetals with high mobilities, NbP, TaP, NbSb₂, and TaSb₂, all of which exhibit nonsaturating large magnetoresistance (MR). We find that the distinctly different temperature dependences, [Formula: see text], and the values of [Formula: see text] in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP are uncompensated semimetals with linear dispersion, in which the nonsaturating magnetoresistance arises due to guiding center motion, while NbSb₂ and TaSb₂ are compensated semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous nonsaturating large magnetoresistance in TSMs.

Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe2

Platinum ditelluride has recently been characterized, based on angle-resolved photoemission spectroscopy data and electronic band structure calculations, as a possible representative of type-II Dirac semimetals. Here, we report on the magnetotransport behavior (electrical resistivity, Hall effect) in this compound, investigated on high-quality single-crystalline specimens. The magnetoresistance (MR) of PtTe₂ is large (over 3000% at T = 1.8 K in B = 9 T) and unsaturated in strong fields in the entire temperature range studied. The MR isotherms obey a Kohler’s type scaling with the exponent m = 1.69, different from the case of ideal electron-hole compensation. In applied magnetic fields, the resistivity shows a low-temperature plateau, characteristic of topological semimetals. In strong fields, well-resolved Shubnikov – de Haas (SdH) oscillations with two principle frequencies were found, and their analysis yielded charge mobilities of the order of 10³ cm² V⁻¹ s⁻¹ and rather small effective masses of charge carriers, 0.11 m_e and 0.21 m_e. However, the extracted Berry phases point to trivial character of the electronic bands involved in the SdH oscillations. The Hall effect data corroborated a multi-band character of the electrical conductivity in PtTe₂, with moderate charge compensation.

Anisotropic magnetotransport and extremely large magnetoresistance in NbAs2 single crystals

We report the extremely large magnetoresistance and anisotropic magnetoresistance in a non-magnetic semimetallic NbAs₂ single crystal. Unsaturated transverse XMR with quadratic field dependence has been observed to be ~3 × 10⁵ % at 2 K and 15 T. Up to 12.5 K, clear Shubnikov de Haas (SdH) quantum oscillations were observed from which two distinct Fermi pockets were identified. The corresponding quantum electronic parameters such as effective cyclotron mass and Dingle temperature were obtained using Lifshitz-Kosevich formula. From the field dependent Hall resistivity at 2 K, carrier concentrations n_e(n_h) = 6.7691 (6.4352) × 10²⁵ m⁻³ and mobilities μ_e (μ_h) = 5.6676 (7.6947) m² V⁻¹ s⁻¹ for electrons (e) and holes (h) were extracted using semiclassical two-band model fitting. We observed large anisotropic magnetoresistance about 84%, 75%, and 12% at 0.75 T and 6 K for three different orientations γ, θ and ϕ, respectively, similar to that in several topological semimetallic systems. Magnetic properties of NbAs₂ are similar to the case of graphite, without any phase transition in the temperature range from 5 K to 300 K.

Giant positive magnetoresistance in half-metallic double-perovskite Sr2CrWO6 thin films

Magnetoresistance (MR) is the magnetic field-induced change of electrical resistance. The MR effect not only has wide applications in hard drivers and sensors but also is a long-standing scientific issue for complex interactions. Ferromagnetic/ferrimagnetic oxides generally show negative MR due to the magnetic field-induced spin order. We report the unusually giant positive MR up to 17,200% (at 2 K and 7 T) in 12-nm Sr₂CrWO₆ thin films, which show metallic behavior with high carrier density of up to 2.26 × 10²⁸ m^-3 and high mobility of 5.66 × 10⁴ cm² V^-1 s^-1. The possible mechanism is that the external magnetic field suppresses the long-range antiferromagnetic order to form short-range antiferromagnetic fluctuations, which enhance electronic scattering and lead to the giant positive MR. The high mobility may also have contributions to the positive MR. These results not only experimentally confirm that the giant positive MR can be realized in oxides but also open up new opportunities for developing and understanding the giant positive MR in oxides.

Fermi surface topology and magnetotransport in semimetallic LuSb

Several rare-earth monopnictides were shown to exhibit extreme magnetoresistance and field-induced low-temperature plateau of electrical resistivity. These features are also hallmarks of topological semimetals, thus the family is intensively explored with respect to magneto-transport properties and possible hosting Dirac fermion states. We report a comprehensive investigation of Fermi surface and electrical transport properties of LuSb, another representative of this family. At low temperatures, the magnetoresistance of LuSb was found to exceed 3000% without saturation in fields up to 9 T. Analysis of the Hall effect and the Shubnikov-de Haas oscillations revealed that the Fermi surface of this compound consists of several pockets originating from fairly compensated multi-band electronic structure, in full accordance with our first-principles calculations. Observed magnetotransport properties of LuSb can be attributed to the topology of three-dimensional Fermi surface and a compensation of electron and hole contributions.

Fermi surface topology and signature of surface Dirac nodes in LaBi

Novel topological state of matter is one of the rapidly growing fields in condensed matter physics research in recent times. While these materials are fascinating from the aspect of fundamental physics of relativistic particles, their exotic transport properties are equally compelling due to the potential technological applications. Extreme magnetoresistance and ultrahigh carrier mobility are two such major hallmarks of topological materials and often used as primary criteria for identifying new compounds belonging to this class. Recently, LaBi has emerged as a new system, which exhibits the above mentioned properties. However, the topological nature of its band structure remains unresolved. Here, using the magnetotransport and magnetization measurements, we have probed the bulk and surface states of LaBi. Similar to earlier reports, extremely large magnetoresistance and high carrier mobility have been observed with compensated electron and hole density. The Fermi surface properties have been analyzed from both Shubnikov-de Haas and de Haas-van Alphen oscillation techniques. In the magnetization measurement, a prominent paramagnetic singularity has been observed, which demonstrates the non-trivial nature of the surface states in LaBi. Our study unambiguously confirms that LaBi is a three-dimensional topological insulator with possible linear dispersion in the gapped bulk band structure.

Multiple Dirac cones at the surface of the topological metal LaBi

The rare-earth monopnictide LaBi exhibits exotic magneto-transport properties, including an extremely large and anisotropic magnetoresistance. Experimental evidence for topological surface states is still missing although band inversions have been postulated to induce a topological phase in LaBi. In this work, we have revealed the existence of surface states of LaBi through the observation of three Dirac cones: two coexist at the corners and one appears at the centre of the Brillouin zone, by employing angle-resolved photoemission spectroscopy in conjunction with ab initio calculations. The odd number of surface Dirac cones is a direct consequence of the odd number of band inversions in the bulk band structure, thereby proving that LaBi is a topological, compensated semimetal, which is equivalent to a time-reversal invariant topological insulator. Our findings provide insight into the topological surface states of LaBi's semi-metallicity and related magneto-transport properties.

The magnetoresistance suggests an exotic topological phase in LaBi, but the evidence is still missing. Here, Nayak et al. report the existence of surface states of LaBi through the observation of three Dirac cones, confirming it a topological semimetal.

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.