Realization of Valley and Spin Pumps by Scattering at Nonmagnetic Disorders

Tunneling Valley Hall Effect Driven by Tilted Dirac Fermions

Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling valley Hall effect (TVHE) driven by tilted Dirac fermions in all-in-one tunnel junctions based on a two-dimensional (2D) valley material. Different doping of the electrode and spacer regions in these tunnel junctions results in momentum filtering of the tunneling Dirac fermions, generating a strong transverse valley Hall current dependent on the Dirac-cone tilting. Using the parameters of an existing 2D valley material, we demonstrate that such a strong TVHE can host a giant valley Hall angle even in the absence of the Berry curvature. Finally, we predict that resonant tunneling can occur in a tunnel junction with properly engineered device parameters such as the spacer width and transport direction, providing significant enhancement of the valley Hall angle. Our work opens a new approach to generate valley polarization in realistic valleytronic systems.

Topological kink states in graphene

Due to the unique band structure, graphene exhibits a number of exotic electronic properties that have not been observed in other materials. Among them, it has been demonstrated that there exist the one-dimensional valley-polarized topological kink states localized in the vicinity of the domain wall of graphene systems, where a bulk energy gap opens due to the inversion symmetry breaking. Notably, the valley-momentum locking nature makes the topological kink states attractive to the property manipulation in valleytronics. This paper systematically reviews both the theoretical research and experimental progress on topological kink states in monolayer graphene, bilayer graphene and graphene-like classical wave systems. Besides, various applications of topological kink states, including the valley filter, current partition, current manipulation, Majorana zero modes and etc, are also introduced.

Valley Polarization and Valleyresistance in a Monolayer Transition Metal Dichalcogenide Superlattice

A significant, fundamental challenge in the field of valleytronics is how to generate and regulate valley-polarized currents in practical ways. Here, we discover a new mechanism for producing valley polarization in a monolayer transition metal dichalcogenide superlattice, in which valley-resolved gaps are formed at the supercell Brillouin zone boundaries and centers due to intervalley scattering. When the incident energy of the electron lies in the gaps, the available states are valley polarized, thus providing a valley-polarized current from the superlattice. We show that the direction and strength of the valley polarization may be further tuned by varying the potential applied to the superlattice. The transmission can have a net valley polarization of 55% for a four-period heterostructure. Moreover, two such valley filters in series may function as an electrostatically controlled giant valleyresistance device, representing a zero-magnetic field counterpart to the familiar giant magnetoresistance device.

Applications of 2D MXenes in energy conversion and storage systems

This article provides a comprehensive review of MXene materials and their energy-related applications.