1
|
Huma T, Hakimi N, Younis M, Huma T, Ge Z, Feng J. MgO Heterostructures: From Synthesis to Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2668. [PMID: 35957098 PMCID: PMC9370122 DOI: 10.3390/nano12152668] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 07/18/2022] [Accepted: 07/28/2022] [Indexed: 02/04/2023]
Abstract
The energy storage capacity of batteries and supercapacitors has seen rising demand and problems as large-scale energy storage systems and electric gadgets have become more widely adopted. With the development of nano-scale materials, the electrodes of these devices have changed dramatically. Heterostructure materials have gained increased interest as next-generation materials due to their unique interfaces, resilient structures and synergistic effects, providing the capacity to improve energy/power outputs and battery longevity. This review focuses on the role of MgO in heterostructured magnetic and energy storage devices and their applications and synthetic strategies. The role of metal oxides in manufacturing heterostructures has received much attention, especially MgO. Heterostructures have stronger interactions between tightly packed interfaces and perform better than single structures. Due to their typical physical and chemical properties, MgO heterostructures have made a breakthrough in energy storage. In perpendicularly magnetized heterostructures, the MgO's thickness significantly affects the magnetic properties, which is good news for the next generation of high-speed magnetic storage devices.
Collapse
Affiliation(s)
- Tabasum Huma
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China; (T.H.); (N.H.); (Z.G.)
| | - Nadimullah Hakimi
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China; (T.H.); (N.H.); (Z.G.)
| | - Muhammad Younis
- Department of Polymeric Materials, School of Materials Science and Engineering, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing 100081, China;
| | - Tanzeel Huma
- Yale School of Medicine, Yale University, New Haven, CT 06520, USA;
| | - Zhenhua Ge
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China; (T.H.); (N.H.); (Z.G.)
| | - Jing Feng
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China; (T.H.); (N.H.); (Z.G.)
| |
Collapse
|
2
|
Abstract
III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.
Collapse
|
3
|
Zhao W, Su R, Huang Y, Wu J, Fong CF, Feng J, Xiong Q. Transient circular dichroism and exciton spin dynamics in all-inorganic halide perovskites. Nat Commun 2020; 11:5665. [PMID: 33168828 PMCID: PMC7653957 DOI: 10.1038/s41467-020-19471-9] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Accepted: 10/07/2020] [Indexed: 11/12/2022] Open
Abstract
All-inorganic metal halides perovskites (CsPbX3, X = Br or Cl) show strong excitonic and spin-orbital coupling effects, underpinning spin-selective excitonic transitions and therefore exhibiting great promise for spintronics and quantum-optics applications. Here we report spin-dependent optical nonlinearities in CsPbX3 single crystals by using ultrafast pump-probe spectroscopy. Many-body interactions between spin-polarized excitons act like a pseudo-magnetic field and thus lift the degeneracy of spin states resulting in a photoinduced circular dichroism. Such spontaneous spin splitting between “spin-up” and “spin-down” excitons can be several tens of milli-electron volts under intense excitations. The exciton spin relaxation time is ~20 picoseconds at very low pump fluence, the longest reported in the metal halides perovskites family at room temperature. The dominant spin-flip mechanism is attributed to the electron-hole exchange interactions. Our results provide essential understandings towards realizing practical spintronics applications of perovskite semiconductors. Strong excitonic effects and spin-orbit coupling in all-inorganic halide perovskite is promising for spintronic application, yet the spin-dependent phenomenon is not well understood. Here, the authors reveal that many-body interactions between spin-polarized excitons act like pseudo-magnetic field, lifting the degeneracy and resulting in circular dichroism.
Collapse
Affiliation(s)
- Weijie Zhao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Rui Su
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yuqing Huang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jinqi Wu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Chee Fai Fong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jiangang Feng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Qihua Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore. .,State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China.
| |
Collapse
|
4
|
Liu X, Tang N, Zhang S, Zhang X, Guan H, Zhang Y, Qian X, Ji Y, Ge W, Shen B. Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1903400. [PMID: 32670748 PMCID: PMC7341096 DOI: 10.1002/advs.201903400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Revised: 05/07/2020] [Indexed: 06/11/2023]
Abstract
III-nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field-effect transistor (FET). In this work, the dependence of the spin relaxation time on external strain-induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time-resolved Kerr rotation spectroscopy. Owing to the almost canceled two different spin-orbit coupling (SOC), the spin relaxation time as long as 311 ps in the MQWs is obtained at room temperature, being much longer than that in bulk GaN. Furthermore, upon applying an external uniaxial strain, the spin relaxation time decreases sensitively, which originates from the breaking of the SU(2) symmetry. The extracted ratio of the SOC coefficients shows a linear dependence on the external strain, confirming the essential role of the polarization electric field. This effective manipulation of the spin relaxation time sheds light on GaN-based nonballistic spin FET working at room temperature.
Collapse
Affiliation(s)
- Xingchen Liu
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
| | - Ning Tang
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
- Frontiers Science Center for Nano‐optoelectronics & Collaborative Innovation Center of Quantum MatterPeking UniversityBeijing100871China
| | - Shixiong Zhang
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
| | - Xiaoyue Zhang
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
| | - Hongming Guan
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
| | - Yunfan Zhang
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
| | - Xuan Qian
- State Key Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- College of Materials Science and Opto‐Electronic TechnologyCollege of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Yang Ji
- State Key Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- College of Materials Science and Opto‐Electronic TechnologyCollege of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Weikun Ge
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
| | - Bo Shen
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
- Frontiers Science Center for Nano‐optoelectronics & Collaborative Innovation Center of Quantum MatterPeking UniversityBeijing100871China
| |
Collapse
|
5
|
High Circular Polarized Nanolaser with Chiral Gammadion Metal Cavity. Sci Rep 2020; 10:7880. [PMID: 32398835 PMCID: PMC7217972 DOI: 10.1038/s41598-020-64836-1] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2019] [Accepted: 12/16/2019] [Indexed: 11/08/2022] Open
Abstract
We demonstrate a circularly polarized laser with the metal-gallium-nitride gammadion nanocavities. The ultraviolet lasing signal was observed with the high circular dichroism at room temperature under pulsed optical pump conditions. Without external magnetism which breaks the time-reversal symmetry to favor optical transitions of a chosen handedness, the coherent outputs of these chiral nanolasers show a dissymmetry factor as high as 1.1. The small footprint of these lasers are advantageous for applications related to circularly polarized photons in future integrated systems, in contrast to the bulky setup of linearly-polarized lasers and quarter-wave plates.
Collapse
|
6
|
Liu X, Tang N, Fang C, Wan C, Zhang S, Zhang X, Guan H, Zhang Y, Qian X, Ji Y, Ge W, Han X, Shen B. Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors. RSC Adv 2020; 10:12547-12553. [PMID: 35497583 PMCID: PMC9051297 DOI: 10.1039/d0ra00464b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2020] [Accepted: 03/19/2020] [Indexed: 11/21/2022] Open
Abstract
Spin relaxation, affected by interfacial effects, is a critical process for electrical spin injection and transport in semiconductor-based spintronics. In this work, the electrical spin injection into n-GaN via n-GaN/MgO/Co tunnel barrier was realized, and the interface-related spin relaxation was investigated by both electrical Hanle effect measurement and time-resolved Kerr rotation (TRKR) spectrum. It was found that the spin relaxation caused by interfacial random magnetostatic field was nearly equal to the intrinsic contributions at low temperature (less than 80 K) and could be suppressed by smoother n-GaN/Co interface. When the interfacial random magnetostatic field was suppressed, the spin relaxation time extracted from the electrical injection process was still shorter than that in bulk conduction band, which was attributed to Rashba spin-orbit coupling (SOC) induced by the interface band bending in the depletion region. Due to thermal activation, luckily, the spin relaxation induced by the interfacial Rashba SOC was suppressed at temperatures higher than 50 K. These results illustrate that (1) spin relaxation time could be as long as 300 ps for GaN and (2) the influences of interfacial effects could be engineered to further prolong spin relaxation time, both of which shed lights on GaN-based spintronic devices with direct and wide bandgap.
Collapse
Affiliation(s)
- Xingchen Liu
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University Beijing 100871 China
| | - Ning Tang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University Beijing 100871 China .,Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter, Peking University Beijing 100871 China
| | - Chi Fang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences Beijing 100190 China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences Beijing 100190 China
| | - Shixiong Zhang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University Beijing 100871 China
| | - Xiaoyue Zhang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University Beijing 100871 China
| | - Hongming Guan
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University Beijing 100871 China
| | - Yunfan Zhang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University Beijing 100871 China
| | - Xuan Qian
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 China.,College of Materials Science and Opto-Electronic Technology, College of Physical Sciences, University of Chinese Academy of Sciences Beijing 100049 China
| | - Yang Ji
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 China.,College of Materials Science and Opto-Electronic Technology, College of Physical Sciences, University of Chinese Academy of Sciences Beijing 100049 China
| | - Weikun Ge
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University Beijing 100871 China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences Beijing 100190 China
| | - Bo Shen
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University Beijing 100871 China .,Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter, Peking University Beijing 100871 China
| |
Collapse
|
7
|
Gao X, Yang B, Devaux X, Yang H, Liu J, Liang S, Stoffel M, Pasquier L, Hyot B, Grenier A, Bernier N, Migot S, Mangin S, Rinnert H, Jiang C, Zeng Z, Tang N, Sun Q, Ding S, Yang H, Lu Y. Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures. NANOSCALE ADVANCES 2019; 1:4466-4475. [PMID: 36134416 PMCID: PMC9416972 DOI: 10.1039/c9na00340a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2019] [Accepted: 09/29/2019] [Indexed: 06/16/2023]
Abstract
We report a strong perpendicular magnetic anisotropy (PMA) in Au/Co/MgO/GaN heterostructures from both experiments and first-principles calculations. The Au/Co/MgO heterostructures have been grown by molecular beam epitaxy (MBE) on GaN/sapphire substrates. By carefully optimizing the growth conditions, we obtained a fully epitaxial structure with a crystalline orientation relationship Au(111)[1̄10]//Co(0001)[112̄0]//MgO(111)[101̄]//GaN(0002)[112̄0]. More interestingly, we demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy. First-principles calculations performed on the Co (4ML)/MgO(111) structure showed that the MgO(111) surface can strongly enhance the magnetic anisotropy energy by 40% compared to a reference 4ML thick Co hcp film. Our layer-resolved and orbital-hybridization resolved anisotropy analyses helped to clarify that the origin of the PMA enhancement is due to the interfacial hybridization of O 2p and Co 3d orbitals at the Co/MgO interface. The perpendicularly magnetized Au/Co/MgO/GaN heterostructures are promising for efficient spin injection and detection in GaN based opto-electronics without any external magnetic field.
Collapse
Affiliation(s)
- Xue Gao
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Baishun Yang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo 315201 P. R. China
| | - Xavier Devaux
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Hongxin Yang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo 315201 P. R. China
| | - Jianping Liu
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Shiheng Liang
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Mathieu Stoffel
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Ludovic Pasquier
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | | | | | | | - Sylvie Migot
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Stéphane Mangin
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Hervé Rinnert
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Chunping Jiang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Zhongming Zeng
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Ning Tang
- School of Physics, Peking University 100871 Beijing P. R. China
| | - Qian Sun
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Sunan Ding
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Hui Yang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Yuan Lu
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| |
Collapse
|
8
|
Chang TC, Hong KB, Kuo SY, Lu TC. Demonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflector. Sci Rep 2019; 9:13055. [PMID: 31506495 PMCID: PMC6736857 DOI: 10.1038/s41598-019-49604-0] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2019] [Accepted: 08/02/2019] [Indexed: 11/09/2022] Open
Abstract
We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.
Collapse
Affiliation(s)
- Tsu-Chi Chang
- Department of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Kuo-Bin Hong
- Department of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Shuo-Yi Kuo
- Department of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Tien-Chang Lu
- Department of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan.
| |
Collapse
|
9
|
|