Mechanisms for Strong Anisotropy of In-Plane g-Factors in Hole Based Quantum Point Contacts

Generating a Topological Anomalous Hall Effect in a Nonmagnetic Conductor: An In-Plane Magnetic Field as a Direct Probe of the Berry Curvature

We demonstrate that the Berry curvature monopole of nonmagnetic two-dimensional spin-3/2 holes leads to a novel Hall effect linear in an applied in-plane magnetic field B_{∥}. Remarkably, all scalar and spin-dependent disorder contributions vanish to leading order in B_{∥}, while there is no Lorentz force and hence no ordinary Hall effect. This purely intrinsic phenomenon, which we term the anomalous planar Hall effect (APHE), provides a direct transport probe of the Berry curvature accessible in all p-type semiconductors. We discuss experimental setups for its measurement.

New signatures of the spin gap in quantum point contacts

One dimensional semiconductor systems with strong spin-orbit interaction are both of fundamental interest and have potential applications to topological quantum computing. Applying a magnetic field can open a spin gap, a pre-requisite for Majorana zero modes. The spin gap is predicted to manifest as a field dependent dip on the first 1D conductance plateau. However, disorder and interaction effects make identifying spin gap signatures challenging. Here we study experimentally and numerically the 1D channel in a series of low disorder p-type GaAs quantum point contacts, where spin-orbit and hole-hole interactions are strong. We demonstrate an alternative signature for probing spin gaps, which is insensitive to disorder, based on the linear and non-linear response to the orientation of the applied magnetic field, and extract a spin-orbit gap ΔE ≈ 500 μeV. This approach could enable one-dimensional hole systems to be developed as a scalable and reproducible platform for topological quantum applications.

In one-dimensional systems, the combination of a strong spin-orbit interaction and an applied magnetic field can give rise to a spin-gap, however experimental identification is difficult. Here, the authors present new signatures for the spin-gap, and verify these experimentally in hole QPCs.

Electrical Control of the Zeeman Spin Splitting in Two-Dimensional Hole Systems

Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a gallium arsenide quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector k. We find a threefold enhancement of the in-plane g-factor g_{∥}(k). We introduce a new method for quantifying the Zeeman splitting from magnetoresistance measurements, since the conventional tilted field approach fails for two-dimensional systems with strong spin-orbit coupling. Finally, we show that the Rashba spin-orbit interaction suppresses the in-plane Zeeman interaction at low magnetic fields. The ability to control the Zeeman splitting with electric fields opens up new possibilities for future quantum spin-based devices, manipulating non-Abelian geometric phases, and realizing Majorana systems in p-type superconductor systems.

Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium

We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2 e²/ h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors with absolute values below 1 in the quantum-well plane, and exceeding 10 out-of-plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, which is in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step toward the realization of novel devices for applications in quantum spintronics.