Prediction of Intrinsic Ferromagnetic Ferroelectricity in a Transition-Metal Halide Monolayer

Above-Room-Temperature Ferroelectricity and Giant Second Harmonic Generation in 1D vdW NbOI3

The realization of spontaneous ferroelectricity down to the one-dimensional (1D) limit is both fundamentally intriguing and practically appealing for high-density ferroelectric and nonlinear photonics. However, the 1D vdW ferroelectric materials are not discovered experimentally yet. Here, the first 1D vdW ferroelectric compound NbOI3 with a high Curie temperature TC > 450 K and giant second harmonic generation (SHG) is reported. The 1D crystalline chain structure of the NbOI3 is revealed by cryo-electron microscopy, whereas the 1D ferroelectric order originated from the Nb displacement along the Nb-O chain (b-axis) is confirmed via obvious electrical and ferroelectric hysteresis loops. Impressively, NbOI3 exhibits a giant SHG susceptibility up to 1572 pm V-1 at a fundamental wavelength of 810 nm, and a further enhanced SHG susceptibility of 5582 pm V-1 under the applied hydrostatic pressure of 2.06 GPa. Combing in situ pressure-dependent X-ray diffraction, Raman spectra measurements, and first-principles calculations, it is demonstrated that the O atoms shift along the Nb─O atomic chain under compression, which can lead to the increased Baur distortion of [NbO2I4] octahedra, and hence induces the enhancement of SHG. This work provides a 1D vdW ferroelectric system for developing novel ferroelectronic and photonic devices.

Metal-support spin orders: Crucial effect on electrocatalytic oxygen reduction

Magnetic property (e.g. spin order) of support is of great importance in the rational design of heterogeneous catalysts. Herein, we have taken the Ni-supported ferromagnetic (FM) CrBr3 support (Nix/CrBr3) to thoroughly investigate the effect of spin-order on electrocatalytic oxygen reduction reaction (ORR) via spin-polarized density functional theory calculations. Specifically, Ni loading induces anti-FM coupling in Ni-Cr, leading to a transition from FM-to-ferrimagnetic (FIM) properties, while Ni-Ni metallic bonds create a robust FM direct exchange, benefiting the improvement of the phase transition temperature. Interestingly, with the increase in Ni loading, the easy magnetic axis changes from out-of-plane (2D-Heisenberg) to in-plane (2D-XY). The adsorption properties of Nix/CrBr3, involving O2 adsorption energy and configuration, are not governed by the d-band center but strongly correlate with magnetic anisotropy. It is noteworthy that the applied potential and electrolyte acidity triggers spin-order transition phenomena during the ORR and induces the catalytic pathway change from 4e- ORR to 2e- ORR with the excellent onset potential of 0.93 V/reversible hydrogen electrode, comparable to the existing most excellent noble-metal catalysts. Generally, these findings offer new avenues to understand and design heterogeneous catalysts with magnetic support.

Strain-induced ferroelectric polarization reversal without undergoing geometric inversion in blue SiSe monolayer

Ferroelectricity in two-dimensional (2D) systems generally arises from phonons and has been widely investigated. On the contrary, electronic ferroelectricity in 2D systems has been rarely studied. Using first-principles calculations, the ferroelectric behavior of the buckled blue SiSe monolayer under strain are explored. It is found that the direction of the out-of-plane ferroelectric polarization can be reversed by applying an in-plane strain. And such polarization switching is realized without undergoing geometric inversion. Besides, the strain-triggered polarization reversal emerges in both biaxial and uniaxial strain cases, indicating it is an intrinsic feature of such a system. Further analysis shows that the polarization switching is the result of the reversal of the magnitudes of the positive and negative charge center vectors. And the variation of buckling is found to play an important role, which results in the switch. Moreover, a non-monotonic variation of band gap with strain is revealed. Our findings throws light on the investigation of novel electronic ferroelectric systems.

Janus Cr2BN Monolayer with Ferroelectricity and Room-Temperature Ferromagnetism

Janus monolayers, a special kind of two-dimensional materials, offer an exciting platform for the development of novel electronic/spintronic devices because of their out-of-plane asymmetry. Herein, we propose a sandwich liked Janus tetragonal Cr2BN monolayer with ferroelectricity and ferromagnetism through first-principles calculations. The predicted magnetic moment is up to ~3.0 μB/Cr originating from the distorted square crystal field induced by out-of-plane asymmetry. The Cr2BN monolayer possesses an intrinsic ferromagnetism with a high Curie temperature of 383 K and a sizeable magnetic anisotropy energy of 171 μeV/Cr. Its robust ferromagnetism, dominating by the multi-anion mediated super-exchange interactions, can even resist -5 % ~5 % biaxial strain. Its large cohesive energy and high dynamical/thermal stability provide a strong feasibility for experimental synthesis. These intriguing properties render the Cr2BN monolayer a promising material for nanoscale spintronic devices.

Multiferroicity driven by single-atom adsorption on the two-dimensional semiconductor ScCl3

In recent years, two-dimensional (2D) transition metal halides (such as CrI3) have received more and more attention for the practical applications of spintronic devices due to their unique electronic and magnetic properties. However, most 2D transition metal halides are centrosymmetric and are non-polar, which hinders their applications on nonvolatile memories. Here, on the basis of first-principles calculations, we predict that the adsorption of K single-atoms on the ScCl3 monolayer (denoted as K@ScCl3) could break the structural centrosymmetry and induce a reversible large out-of-plane electric polarization. Simultaneously, the adsorption of K single-atoms induces a magnetic moment localized on Sc ions, which forms a ferromagnetic order with an estimated Curie temperature of ∼37 K. These make the K@ScCl3 monolayer a ferromagnetic ferroelectric semiconductor. These findings propose a new route to realize 2D multiferroic materials, which is of great significance for the research and development of spintronics.

Two-Dimensional Os2Se3 Nanosheet: A Ferroelectric Metal with Room-Temperature Ferromagnetism

Two-dimensional (2D) ferroelectric metals (FEMs) possess intriguing characteristics, such as unconventional superconductivity and the nonlinear anomalous Hall effect. However, their occurrence is exceedingly rare due to mutual repulsion between ferroelectricity and metallicity. In addition, further incorporating other features like ferromagnetism into FEMs to enhance their functionalities poses a significantly greater challenge. Here, via first-principles calculations, we demonstrate a case of an FEM that features a coexistence of room-temperature ferromagnetism, ferroelectricity, and metallicity in a thermodynamically stable 2D Os2Se3. It presents a vertical electric polarization of 3.00 pC/m that exceeds those of most FEMs and a moderate polarization switching barrier of 0.22 eV per formula unit. Moreover, 2D Os2Se3 exhibits robust ferromagnetism (Curie temperature TC ≈ 527 K) and a sizable magnetic anisotropy energy (-30.87 meV per formula unit). Furthermore, highly magnetization-dependent electrical conductivity is revealed, indicative of strong magnetoelectric coupling. Berry curvature calculation suggests that the FEM might exhibit nontrivial band topology.

Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets

Magneto-optical effects (MOE), interfacing the fundamental interplay between magnetism and light, have served as a powerful probe for magnetic order, band topology, and valley index. Here, based on multiferroic and topological bilayer antiferromagnets (AFMs), we propose a layer control of MOE (L-MOE), which is created and annihilated by layer-stacking or an electric field effect. The key character of L-MOE is the sign-reversible response controlled by ferroelectric polarization, the Néel vector, or the electric field direction. Moreover, the sign-reversible L-MOE can be quantized in topologically insulating AFMs. We reveal that the switchable L-MOE originates from the combined contributions of spin-conserving and spin-flip interband transitions in spin-valley splitting AFMs, a phenomenon not observed in conventional AFMs. Our findings bridge the ancient MOE to the emergent realms of layertronics, valleytronics, and multiferroics and may hold immense potential in these fields.

A Route to Two-Dimensional Room-Temperature Organometallic Multiferroics: The Marriage of d-p Spin Coupling and Structural Inversion Symmetry Breaking

Two-dimensional (2D) room-temperature multiferroic materials are highly desirable but still very limited. Herein, we propose a potential strategy to obtain such materials in 2D metal-organic frameworks (MOFs) by utilizing the d-p direct spin coupling in conjunction with center-symmetry-breaking six-membered heterocyclic rings. Based on this strategy, a screening of 128 2D MOFs results in the identification of three multiferroics, that is, Cr(1,2-oxazine)2, Cr(1,2,4-triazine)2, and Cr(1,2,3,4-trazine)2, simultaneously exhibiting room-temperature ferrimagnetism and ferroelectricity/antiferroelectricity. The room-temperature ferrimagnetic order (306-495 K) in these MOFs originates from the strong d-p direct magnetic exchange interaction between Cr cations and ligand anions. Specifically, Cr(1,2-oxazine)2 exhibits ferroelectric behavior with an out-of-plane polarization of 4.24 pC/m, whereas the other two manifest antiferroelectric characteristics. Notably, all three materials present suitable polarization switching barriers (0.18-0.31 eV). Furthermore, these MOFs are all bipolar magnetic semiconductors with moderate band gaps, in which the spin direction of carriers can be manipulated by electrical gating.

Electronic structure and magnetothermal properties of two-dimensional ScCl

Two-dimensional ferromagnetic materials with intrinsic half-metallic properties have strong application advantages in nanoscale spintronics. Herein, density functional theory calculations show that monolayer ScCl is a ferromagnetic metallic material when undoped (n = 0), and the transition from metal to half-metal occurs with the continuous doping of holes. On the contrary, as the concentration of doped electrons increases, the system will exhibit metallic characteristics, which is particularly evident from a variation in spin polarizability. Furthermore, we have discussed how doped carriers affect the shape of the Fermi surface and the Fermi velocity of electrons. Most importantly, Monte Carlo simulations show that the ScCl monolayer is particularly regulated by carrier concentration (n) and magnetic field (h). Additionally, trends in energy and magnetic exchange coupling in different magnetic configurations (AFM phase and FM phase) with different doping concentrations are presented. When n < -0.16, the material is not only a half-metallic material that easily flips the magnetic axis, but also proves to be a candidate ferromagnetic material that works stably at room temperature in terms of dynamic stability. In addition, the origin of magnetocrystalline anisotropy is analyzed, and the contribution of different orbitals to spin-orbit coupling is presented. Moreover, we note that when magnetic field is small (h < 1 T), the change in size has a significant effect on ferromagnetic phase transition. However, when the system size is large (size >15 nm), TC is less sensitive to magnetic field. In addition, hole doping and size effect will greatly affect the hC of the system, but when the hole doping exceeds the critical value (n = -0.16), its influence on the hysteresis loop is no longer obvious. These interesting magnetic phenomena and easily adjustable physical properties show us that monolayer ScCl will be a promising functional material.

Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio

Low-dimensional ferroelectric tunnel junctions are appealing for the realization of nanoscale nonvolatile memory devices due to their inherent advantages of device miniaturization. Those based on current mechanisms have limitations, including low tunneling electroresistance (TER) effects and complex heterostructures. Here, we introduce an entirely new TER mechanism to construct a nanotube ferroelectric tunnel junction with ferroelectric nanotubes as the tunneling region. When rolling a ferroelectric monolayer into a nanotube, due to the coexistence of its intrinsic ferroelectric polarization with the flexoelectric polarization induced by bending, a metal-insulator transition occurs depending on the radiative polarization states. For the pristine monolayer, its out-of-plane polarization is tunable by an in-plane electric field, and the conducting states of the ferroelectric nanotube can thus be tuned between metallic and insulating states via axial electric means. Using α-In2Se3 as an example, our first-principles density functional theory calculations and nonequilibrium Green's function formalism confirm the feasibility of the TER mechanism and indicate an ultrahigh TER ratio that exceeds 9.9 × 1010% of the proposed nanotube ferroelectric tunnel junctions. Our findings provide a promising approach based on simple homogeneous structures for high density ferroelectric microelectric devices with excellent ON/OFF performance.

Origin of Multiferroism in VOX2 (X = Cl, Br, I) Monolayers

Based on the proposed microscopic model, we investigate the multiferroic characteristics of VOX2 (X = Cl, Br, I) monolayers using a Green's function method. The dependence of the microscopic parameters of the ferroelectric system (pseudo-spin arrangement and flipping rate) on the magnitude and sign of the exchange magnetic interaction along the b-axis and the value of the Dzyaloshinskii-Moria vector have been investigated and qualitatively explained. The possibility of observing a spin-reorientation transition with a change in the character of spin ordering from antiferromagnetic to ferromagnetic is investigated. It is found that the antisymmetric magnetoelectric interaction may be responsible for the spin-reorientation transition without a change in the ordering of magnetic moments. Changing the sign of the exchange magnetic interaction along the b-axis leads to ferromagnetic ordering without observing a spin-reorientation transition. The dependence of isotropic and antisymmetric magnetic interactions on the microscopic parameters of the ferroelectric system is qualitatively explained. A mechanism for the occurrence of the spin-reorientation transition is presented based on the proposed microscopic model. The obtained results qualitatively coincide with Density Functional Theory calculations.

Realizing multiferroics in α-Ga2S3via hole doping: a first-principles study

Using first-principles calculations, we report the realization of multiferroics in an intrinsic ferroelectric α-Ga2S3 monolayer. Our results show that the presence of intrinsic gallium vacancies, which is the origin of native p-type conductivity, can simultaneously introduce a ferromagnetic ground state and a spontaneous out-of-plane polarization. However, the high switching barrier and thermodynamic irreversibility of the ferroelectric reversal path disable the maintenance of ferroelectricity, suggesting that the defect-free form should be a prerequisite for Ga2S3 to be multiferroic. Through applying strain, the behavior of spontaneous polarization of the pristine α-Ga2S3 monolayer can be effectively regulated, but the non-magnetic ground state does not change. Strikingly, via an appropriate concentration of hole doping, stable ferromagnetism with a high Curie temperature and robust ferroelectricity can be concurrently introduced in the α-Ga2S3 monolayer. Our work provides a feasible method for designing 2D multiferroics with great potential in future device applications.

Research progress on photocatalytic reduction of CO2 based on ferroelectric materials

Transforming CO2 into renewable fuels or valuable carbon compounds could be a practical means to tackle the issues of global warming and energy crisis. Photocatalytic CO2 reduction is more energy-efficient and environmentally friendly, and offers a broader range of potential applications than other CO2 conversion techniques. Ferroelectric materials, which belong to a class of materials with switchable polarization, are attractive candidates as catalysts due to their distinctive and substantial impact on surface physical and chemical characteristics. This review provides a concise overview of the fundamental principles underlying photocatalysis and the mechanism involved in CO2 reduction. Additionally, the composition and properties of ferroelectric materials are introduced. This review expands on the research progress in using ferroelectric materials for photocatalytic reduction of CO2 from three perspectives: directly as a catalyst, by modification, and construction of heterojunctions. Finally, the future potential of ferroelectric materials for photocatalytic CO2 reduction is presented. This review may be a valuable guide for creating reasonable and more effective photocatalysts based on ferroelectric materials.

Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI3-based tunnel junctions. The few-layer CrI3-based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI3. We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI3 via gating-induced Jahn-Teller distortion. Our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

Defective ReS2 Triggers High Intrinsic Piezoelectricity for Piezo-Photocatalytic Efficient Sterilization

Rhenium disulfide (ReS2) is a promising piezoelectric catalyst due to its excellent electron transfer ability and abundant unsaturated sites. The 1T' phase structure leads to the evolution of ReS2 into a centrosymmetric spatial structure, which restricts its application in piezoelectric catalysis. Herein, we propose a controllable defect engineering strategy to trigger the piezoelectric response of ReS2. The introduction of vacancy defects disrupts the initial centrosymmetric structure, which breaks the piezoelectric polarization bond and generates piezoelectric properties. By using transmission electron microscopy, we characterized it at the atomic scale and determined that vacancy defects contribute to an excellent piezoelectric property through first-principles calculations. Notably, the piezoelectric coefficient of the catalyst with 40 s-etching (ReS2@C-40) is 23.07 pm/V, an order of magnitude greater than other transition metal dichalcogenides. It demonstrated the feasibility of optimizing piezoelectric properties by increasing the conformational asymmetry. Based on its remarkable piezoelectric activity, ReS2@C-40 exhibits highly efficient piezo-photocatalytic synergistic sterilization performance with 99.99% eradication of Escherichia coli and 96.67% of Staphylococcus aureus within 30 min. This pioneering research on the coupling effect of ReS2 in piezoelectric catalysis and photocatalysis provides ideas for the development of piezo-photocatalysts and efficient water purification technologies.

Spin-Driven Ferroelectricity in Two-Dimensional Magnetic Heterostructures

Achieving magnetic control of ferroelectricity or electric control of magnetism is usually challenging in material systems as their magnetism and ferroelectricity have distinct fundamental origins and are subject to different symmetry constraints. However, such control has significant promise for a wide range of device applications. In this work, we employ first-principles density functional theory calculations to demonstrate the emergence of spin-driven ferroelectricity in a vertically stacked two-dimensional (2D) van der Waals magnetic heterostructure, formed by two ferromagnetic (FM) CrBr3 layers separated by an antiferromagnetic (AFM) MnPSe3 layer, delicately designed to be structurally inversion symmetric but magnetically asymmetric. The spin-induced out-of-plane electric polarization of the entire heterostructure can be reversibly controlled by an external magnetic field. We further validate the effectiveness of this design strategy in several other lattice-matched FM/AFM/FM heterostructures, thereby providing a novel family of multiferroic systems based on 2D materials.

Direct observation of intrinsic room-temperature ferroelectricity in 2D layered CuCrP2S6

Multiferroic materials have ignited enormous interest owing to their co-existence of ferroelectricity and ferromagnetism, which hold substantial promise for advanced device applications. However, the size effect, dangling bonds, and interface effect in traditional multiferroics severely hinder their potential in nanoscale device applications. Recent theoretical and experimental studies have evidenced the possibility of realizing two-dimensional (2D) multiferroicity in van der Waals (vdW) layered CuCrP2S6. However, the incorporation of magnetic Cr ions in the ferroelectric framework leads to antiferroelectric and antiferromagnetic orderings, while macroscopic spontaneous polarization is always absent. Herein, we report the direct observation of robust out-of-plane ferroelectricity in 2D vdW CuCrP2S6 at room temperature with a comprehensive investigation. Modification of the ferroelectric polarization states in 2D CuCrP2S6 nanoflakes is experimentally demonstrated. Moreover, external electric field-induced polarization switching and hysteresis loops are obtained in CuCrP2S6 down to ~2.6 nm (4 layers). By using atomically resolved scanning transmission electron microscopy, we unveil the origin of the emerged room-temperature ferroelectricity in 2D CuCrP2S6. Our work can facilitate the development of multifunctional nanodevices and provide important insights into the nature of ferroelectric ordering of this 2D vdW material.

Momentum matching induced giant magnetoresistance in two-dimensional magnetic tunnel junctions

Giant magnetoresistance was first experimentally discovered in three-dimensional magnetic tunnel junctions (MTJs) in the late 1980s and is of great importance in nonvolatile memory applications. How to achieve a magnetoresistance as large as possible is always a central task in the study of MTJs. However, it is normally only of the order of magnitude of tens of percent in traditional MTJs. The ideal situation is the metal-insulator transition together with the magnetization reversal of one magnetic lead. In this work, we will show that this can be achieved using a two-dimensional ferromagnetic zigzag SiC nanoribbon junction based on quantum transport calculations performed with a combination of density functional theory and non-equilibrium Green's function. Specifically, with the magnetization configuration switching of the two leads from parallel to anti-parallel, the junction will change abruptly from a conducting state to an insulating state, although the two leads are always metallic, with both spin up and spin down channels crossing the Fermi level simultaneously. Extensive analysis indicates that the insulating state in the anti-parallel magnetic configuration originates not from any present mechanisms that cause full suppression of electron transmission but from momentum direction mismatching. This finding suggests a fantastic mechanism for achieving magnetoresistance or electrical switching in nanoscale devices by manipulating band dispersion.

Ferroic Phases in Two-Dimensional Materials

Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.

Spin-splitting and switchable half-metallicity in a van der Waals multiferroic CuBiP2Se6/GdClBr heterojunction

Multiferroic van der Waals (vdW) heterojunctions have a strong and nonvolatile magnetoelectric coupling effect, which is of great significance in spintronic devices. The electronic structure and magnetic properties of a GdClBr/CuBiP₂Se₆ vdW multiferroic heterojunction have been calculated using first-principles methods. Due to the spin-up charge transfer and Zeeman field, the ferroelectric CuBiP₂Se₆ exhibits spin splitting at the gamma point. It is found that the electronic structure and magnetic properties of the GdClBr/CuBiP₂Se₆ vdW multiferroic heterojunction have been significantly modulated by the electric polarization of CuBiP₂Se₆. During the reversal of the ferroelectric polarization of CuBiP₂Se₆, the ferromagnetic GdClBr monolayer transforms from a semiconductor to a half-metal. Meanwhile, in both upward and downward ferroelectric polarization, the GdClBr/CuBiP₂Se₆ heterojunction exhibits perpendicular magnetic anisotropy with a Curie temperature of 239 K. As the strain changes from -6% to 6%, the band structure of GdClBr shifts upward, and the band structure of CuBiP₂Se₆ shifts downward. Compressive strain can increase the Curie temperature of the GdClBr/CuBiP₂Se₆ heterojunction. The magnetic anisotropy of heterojunctions highly depends on biaxial strain, where the perpendicular (in-plane) magnetic anisotropy increases with the increased compressive (tensile) strain. The vdW multiferroic GdClBr/CuBiP₂Se₆ heterojunction has potential applications in spintronic devices.

Two-dimensional ferromagnetic semiconductors of monolayer BiXO3 (X = Ru, Os) with direct band gaps, high Curie temperatures, and large magnetic anisotropy

Two-dimensional (2D) ferromagnetic semiconductors are highly promising candidates for spintronics, but are rarely reported with direct band gaps, high Curie temperatures (T_c), and large magnetic anisotropy. Using first-principles calculations, we predict that two ferromagnetic monolayers, BiXO₃ (X = Ru, Os), are such materials with a direct band gap of 2.64 and 1.69 eV, respectively. Monte Carlo simulations reveal that the monolayers show high T_c beyond 400 K. Interestingly, both BiXO₃ monolayers exhibit out-of-plane magnetic anisotropy, with magnetic anisotropy energy (MAE) of 1.07 meV per Ru for BiRuO₃ and 5.79 meV per Os for BiOsO₃. The estimated MAE for the BiOsO₃ sheet is one order of magnitude larger than that for the CrI₃ monolayer (685 μeV per Cr). Based on the second-order perturbation theory, it is revealed that the large MAE of the monolayers BiRuO₃ and BiOsO₃ is mainly contributed by the matrix element differences between d_xy and d_x²-y² and d_yz and d_z² orbitals. Importantly, the ferromagnetism remains robust in 2D BiXO₃ under compressive strain, while undergoing a ferromagnetic to antiferromagnetic transition under tensile strain. The intriguing electronic and magnetic properties make BiXO₃ monolayers promising candidates for nanoscale electronics and spintronics.

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Currently, as shown by large-scale research on two-dimensional materials in the field of nanoelectronics and catalysis, the construction of large-area two-dimensional materials is crucial for the development of devices and their application in photovoltaics, sensing, optoelectronics, and energy generation/storage. Here, using atmospheric-pressure chemical vapor deposition, we developed a method to regulate growth conditions according to the growth mechanism for WSe₂ and MoSe₂ materials. By accurately controlling the hydrogen flux within the range of 1 sccm and the distance between the precursor and the substrate, we obtained large-size films of single atomic layers with thicknesses of only about 1 nm. When growing the samples, we could not only obtain a 100 percent proportion of samples with the same shape, but the samples could also be glued into pieces of 700 μm and above in size, changing the shape and making it possible to reach the millimeter/submillimeter level visible to the naked eye. Our method is an effective method for the growth of large-area films with universal applicability.

Towards two-dimensional van der Waals ferroelectrics

The discovery of ferroelectricity in two-dimensional (2D) van der Waals (vdW) materials has brought important functionalities to the 2D materials family, and may trigger a revolution in next-generation nanoelectronics and spintronics. In this Perspective, we briefly review recent progress in the field of 2D vdW ferroelectrics, focusing on the mechanisms that drive spontaneous polarization in 2D systems, unique properties brought about by the reduced lattice dimensionality and promising applications of 2D vdW ferroelectrics. We finish with an outlook for challenges that need to be addressed and our view on possible future research directions.

Highly degenerate 2D ferroelectricity in pore decorated covalent/metal organic frameworks

Two-dimensional (2D) ferroelectricity, a fundamental concept in low-dimensional physics, serves as the basis of non-volatile information storage and various electronic devices. Conventional 2D ferroelectric (FE) materials are usually two-fold degenerate, meaning that they can only store two logical states. In order to break such limitation, a new concept of highly degenerate ferroelectricity with multiple FE states (more than 2) coexisting in a single 2D material is proposed. This is obtained through the asymmetrical decoration of porous covalent/metal organic frameworks (COFs/MOFs). Using first-principles calculations and Monte Carlo (MC) simulations, Li-decorated 2D Cr(pyz)₂ is systematically explored as a prototype of highly degenerate 2D FE materials. We show that 2D FE Li_0.5Cr(pyz)₂ and LiCr(pyz)₂ are four-fold and eight-fold degenerate, respectively, with sizable spontaneous electric polarization that can be switched across low transition barriers. In particular, the coupling between neighbouring electric dipoles in LiCr(pyz)₂ induces novel ferroelectricity-controlled ferroelastic transition and direction-controllable hole transport channels. Moreover, three-fold and six-fold degenerate ferroelectricity is also demonstrated in P-decorated g-C₃N₄ and Ru-decorated C₂N, respectively. Our work presents a general route to obtain highly degenerate 2D ferroelectricity, which goes beyond the two-state paradigm of traditional 2D FE materials and substantially broadens the applications of 2D FE compounds.

Enabling Room-Temperature Triferroic Coupling in Dual Transition-Metal Dichalcogenide Monolayers Via Electronic Asymmetry

Triferroic compounds are the ideal platform for multistate information devices but are rare in the two-dimensional (2D) form, and none of them can maintain macroscopic order at room temperature. Herein, we propose a general strategy for achieving 2D triferroicity by imposing electric polarization into a ferroelastic magnet. Accordingly, dual transition-metal dichalcogenides, for example, 1T'-CrCoS₄, are demonstrated to display room-temperature triferroicity. The magnetic order of 1T'-CrCoS₄ undergoes a magnetic transition during the ferroic switching, indicating robust triferroic magnetoelectric coupling. In addition, the negative out-of-plane piezoelectricity and strain-tunable magnetic anisotropy make the 1T'-CrCoS₄ monolayer a strong candidate for practical applications. Following the proposed scheme, a new class of 2D room-temperature triferroic materials is introduced, providing a promising platform for advanced spintronics.

Multiferroicity in a Two-Dimensional Non-van der Waals Crystal of AgCr2X4 (X = S or Se)

Two-dimensional (2D) intrinsic multiferroics have long been pursued not only for their potential technological applications but also as model systems for studying emergent quantum phenomena and coupling mechanisms between various order parameters in low-dimensional space. However, the realization of 2D multiferroics is still a challenge. In this paper, we reveal that 2D AgCr₂X₄ (X = S or Se) crystals, which have been synthesized from the non-van der Waals (non-vdW) AgCrX₂ bulk phase, are type I half-metallic/metallic multiferroics in which ferroelectricity and ferromagnetism coexist. The off-centering displacement of the Ag ion introduces out-of-plane polarization, and the magnetism originates from the interactions between Cr atoms. Remarkably, AgCr₂Se₄ shows topologically nontrivial spin textures, such as Meron pairs and Néel-type skyrmions, under suitable temperatures and magnetic fields. Our findings demonstrate that 2D multiferroics can be achieved from non-vdW materials and in turn open a new avenue for 2D multiferroics.

Large piezoelectric response in ferroelectric/multiferroelectric metal oxyhalide MOX2 (M = Ti, V and X = F, Cl and Br) monolayers

Flexible two-dimensional (2D) piezoelectric materials are promising for applications in wearable electromechanical nano-devices such as sensors, energy harvesters, and actuators. A large piezo-response is required for any practical applications. Based on first-principles calculations, we report that ferroelectric TiOX₂ and multiferroelectric VOX₂ (X = F, Cl, and Br) monolayers exhibit large in-plane stress (e₁₁) and strain (d₁₁) piezoelectric coefficients. For example, the in-plane piezo-response of TiOBr₂ (both e₁₁ = 28.793 × 10^-10 C m^-1 and d₁₁ = 37.758 pm V^-1) is about an order of magnitude larger than that of the widely studied 1H-MoS₂ monolayer, and also quite comparable to the giant piezoelectricity of group-IV monochalcogenide monolayers, e.g., SnS. Moreover, the d₁₁ of MOX₂ monolayers - ranging from 29.028 pm V^-1 to 37.758 pm V^-1 - are significantly higher than the d₁₁ or d₃₃ of commonly used 3D piezoelectrics such as w-AlN (d₃₃ = 5.1 pm V^-1) and α-quartz (d₁₁ = 2.3 pm V^-1). Such a large d₁₁ of MOX₂ monolayers originates from low in-plane elastic constants with large e₁₁ due to large Born effective charges (Z_ij) and atomic sensitivity to an applied strain. Moreover, we show the possibility of opening a new way of controlling piezoelectricity by applying a magnetic field.

Controllable Valley Polarization and Strain Modulation in 2D 2H–VS2/CuInP2Se6 Heterostructures

Two–dimensional (2D) transition metal dichalcogenides endow individually addressable valleys in momentum space at the K and K’ points in the first Brillouin zone due to the breaking of inversion symmetry and the effect of spin–orbit coupling. However, the application of 2H–VS₂ monolayer in valleytronics is limited due to the valence band maximum (VBM) located at the Γ point. Here, by involving the 2D ferroelectric (FE) CuInP₂Se₆ (CIPSe), the ferrovalley polarization, electronic structure, and magnetic properties of 2D 2H–VS₂/CIPSe heterostructures with different stacking patterns and FE polarizations have been investigated by using first–principles calculations. It is found that, for the energetically favorable AB–stacking pattern, the valley polarization is preserved when the FE polarization of CIPSe is upwards (CIPSe↑) or downwards (CIPSe↓) with the splitting energies slightly larger or smaller compared with that of the pure 2H–VS₂. It is intriguing that, for the FE CIPSe↑ case, the VBM is expected to pass through the Fermi energy level, which can be eventually achieved by applying biaxial strain and thus the valleytronic nature is turned off; however, for the CIPSe↓ situation, the heterostructure basically remains semiconducting even under biaxial strains. Therefore, with the influence of proper strains, the FE polar reversal of CIPSe can be used as a switchable on/off to regulate the valley polarization in VS₂. These results not only demonstrate that 2H–VS₂/CIPSe heterostructures are promising potential candidates in valleytronics, but also shed some light on developing practical applications of valleytronic technology.

Toward Room-Temperature Electrical Control of Magnetic Order in Multiferroic van der Waals Materials

Electrical control of magnetic order in van der Waals (vdW) two-dimensional (2D) systems is appealing for high-efficiency and low-dissipation nanospintronic devices. For realistic applications, a vdW 2D material with ferromagnetic (FM) and ferroelectric (FE) orders coexisting and strongly coupling at room temperature is urgently needed. Here we present a potential candidate for nonvolatile electric-field control of magnetic orders at room temperature. Using first-principles calculations, we predict the coexistence of room-temperature FM and FE orders in a 2D transition metal carbide, where the spatial distribution of magnetic moments strongly couples with the orientation of out-of-plane electric polarization. Furthermore, an electric-field switching between interfacial FM and ferrimagnetic orders is realizable through constructing a multiferroic vdW heterostructure based on this material. These findings make a significant step toward realizing room-temperature multiferroicity and strong magnetoelectric coupling in 2D materials.

Large Vertical Piezoelectricity in a Janus Cr2I3F3 Monolayer

Two-dimensional (2D) materials have potential applications in nanoscale sensors and spintronic devices. Herein, motivated by experimental synthesis of a CrI3 monolayer possessing intrinsic magnetism and a Janus MoSSe monolayer with piezoelectricity, we propose a 2D Janus Cr2I3F3 monolayer as a multifunctional material exhibiting both piezoelectricity and ferromagnetism. Using density functional theory calculations, we systematically investigated the structural stability and the electronic, magnetic, and piezoelectric properties of the Janus Cr2I3F3 monolayer. We predicted that a vertical polarization of up to −0.155 × 10−10 C/m is induced in the Cr2I3F3 monolayer due to the breaking of symmetry. The origination mechanism of polarization was demonstrated in terms of a local dipole moment calculated by maximally localized Wannier functions. Meanwhile, it was found that a remarkable piezoelectric response can be produced under a uniaxial strain in the basal plane. The calculated piezoelectric coefficients of the Cr2I3F3 monolayer compare favorably with those of the frequently used bulk piezoelectric materials such as α–quartz and wurtzite AlN. Particularly, the e31 and d31 values of the Cr2I3F3 monolayer are nearly 10 times as large as that of Mo-based transition metal dichalcogenides. We also found that the magnitude of e31 mainly arises from the ionic contribution, while the electronic contribution can be nearly neglected. The considerable piezoelectric response combined with the intrinsic magnetism make the Janus Cr2I3F3 monolayer a potential candidate for novel multifunctional devices integrating both piezoelectric and spintronic applications.

Ultrathin Van der Waals Antiferromagnet CrTe3 for Fabrication of In-Plane CrTe3 /CrTe2 Monolayer Magnetic Heterostructures

Ultrathin van der Waals (vdW) magnets are heavily pursued for potential applications in developing high-density miniaturized electronic/spintronic devices as well as for topological physics in low-dimensional structures. Despite the rapid advances in ultrathin ferromagnetic vdW magnets, the antiferromagnetic counterparts, as well as the antiferromagnetic junctions, are much less studied owing to the difficulties in both material fabrication and magnetism characterization. Ultrathin CrTe₃ layers have been theoretically proposed to be a vdW antiferromagnetic semiconductor with intrinsic intralayer antiferromagnetism. Herein, the epitaxial growth of monolayer (ML) and bilayer CrTe₃ on graphite surface is demonstrated. The structure, electronic and magnetic properties of the ML CrTe₃ are characterized by combining scanning tunneling microscopy/spectroscopy and non-contact atomic force microscopy and confirmed by density functional theory calculations. The CrTe₃ MLs can be further utilized for the fabrication of a lateral heterojunction consisting of ML CrTe₂ and ML CrTe₃ with an atomically sharp and seamless interface. Since ML CrTe₂ is a metallic vdW magnet, such a heterostructure presents the first in-plane magnetic metal-semiconductor heterojunction made of two vdW materials. The successful fabrication of ultrathin antiferromagnetic CrTe₃ , as well as the magnetic heterojunction, will stimulate the development of miniaturized antiferromagnetic spintronic devices based on vdW materials.

A multiferroic iron arsenide monolayer

Iron arsenide (FeAs) monolayers are known as a key component for building iron-based superconductors. Here, we predict by first-principles calculations that the FeAs monolayer is a highly stable and multiferroic material with coexisting ferroelasticity and antiferromagnetism. The ferroelasticity entails a reversible elastic strain of as large as 18% and an activation barrier of 20 meV per atom, attributed to a weak hybridization between Fe d and As p orbitals. The local moments of Fe atoms are oriented out-of-plane, so that the magnetic ordering is weakly coupled to the structural polarization. Interestingly, fluorination of the FeAs monolayer can align the local moments in parallel and reorient the easy axis along the in-plane direction. As such, the fluorinated FeAs monolayer is potentially a long-sought multiferroic material that enables a strong coupling between ferroelasticity and ferromagnetism.

Room-Temperature Ferroelectricity in 1T^{'}-ReS_{2} Multilayers

van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T^{'}-ReS_{2} multilayers via a combined study of theory and experiment. Room-temperature vertical ferroelectricity is observed in two-dimensional 1T^{'}-ReS_{2} with layer number N≥2. The electric polarization stems from the uncompensated charge transfer between layers and can be switched by interlayer sliding. For bilayer 1T^{'}-ReS_{2}, the ferroelectric transition temperature is estimated to be ∼405  K from the second harmonic generation measurements. Our results highlight the importance of interlayer engineering in the realization of atomic-scale ferroelectricity.

A multiferroic vanadium phosphide monolayer with ferromagnetic half-metallicity and topological Dirac states

Ferroelasticity, ferromagnetism, half-metallicity, and topological Dirac states are properties highly sought in two-dimensional (2D) materials for advanced device applications. Here, we report first-principles prediction of a dynamically and thermally stable tetragonal vanadium phosphide (t-VP) monolayer that hosts all these desirable properties. This monolayer is substantially ferromagnetic with polarized spins aligned in the in-plane direction via a d-p-d super-exchange coupling mechanism; meanwhile, its tetragonal lattice enables an intrinsic in-plane ferroelasticity with a reversible strain of 23.4%. As a result, the ferroelasticity is strongly coupled with ferromagnetism via spin-orbit coupling to enable deterministic control over the magnetocrystalline anisotropy by an applied elastic strain. More interestingly, this multiferroic t-VP monolayer possesses half-metallicity with an anisotropic, topological Dirac cone residing in the majority-spin channel. We also predict a multiferroic t-CrN monolayer, whose ferromagnetism features a high Curie temperature of up to 478 K but is weakly coupled to its in-plane ferroelasticity. These results suggest a tetragonal 2D lattice as a robust atomic-scale scaffold on the basis of which fascinating electronic and magnetic properties can be rationally created by a suitable combination of chemical elements.

High-Throughput Screening of Efficient Biatom Catalysts Based on Monolayer Carbon Nitride for the Nitric Oxide Reduction Reaction

Exploring efficient catalysts for the nitric oxide reduction reaction (NORR) toward NH₃ synthesis is becoming increasingly important for tackling both NH₃ synthesis and NO removal problems. Currently, only a few NORR catalysts have been proposed, which are exclusively concentrated on bulk metals or single-atom catalysts. Here, taking monolayer C₂N as an example, we explore the potential of biatom catalysts (BACs) for direct NO-to-NH₃ conversion by means of high-throughput first-principles calculations. According to a rational five-step screening strategy, a promising BAC of Cr₂-C₂N is successfully screened out, exhibiting high stability, activity, and selectivity and a low kinetic barrier for the NORR toward NH₃ synthesis. Importantly, the adsorption energy of N atoms (ΔE_*N) and the Gibbs free energy of NO adsorption (ΔG_*NO) are identified as effective descriptors for efficient NORR catalysts. In addition, through tuning the NO coverage, the NORR on Cr₂-C₂N could produce different products of NH₃ and N₂O, providing the possibility to realize controllable multiproduct BACs. These findings not only suggest the great potential of BACs for direct NO-to-NH₃ conversion but also help in rationally designing high-performance BACs.

Hydrogen-Intercalated 2D Magnetic Bilayer: Controlled Magnetic Phase Transition and Half-Metallicity via Ferroelectric Switching

Electrically controlled magnetism in two-dimensional (2D) multiferroics is highly desirable for both fundamental research and the future development of low-power nanodevices. Herein, inspired by the recently experimentally realized 2D antiferromagnetic MnPSe₃ [ Nat. Nanotechnol. 2021, 16 (7), 782] and guided by a heteromagnetic structural design, we engineer strong magnetoelectric coupling in a hydrogen-intercalated 2D MnPSe₃ bilayer. Hydrogen functionalization breaks the centrosymmetry of bilayer MnPSe₃, leading to out-of-plane ferroelectricity. Moreover, there is a phase transition from antiferromagnetic semiconductor to ferromagnetic half-metal in the H-bonded MnPSe₃ layer, while the other remains antiferromagnetic and semiconducting. When reversing the electrical polarization, the intercalated H atom can flip between the top and bottom layers with an ultralow switching barrier, which allows one to tune the magnetic order and conductivity of the individual layers via an external electric field. Our results pave a new avenue to realize strong magnetoelectric coupling in single-phase multiferroic material. The ferroelectricity-controlled magnetic phase transition and half-metallicity offer promising applications in nanoscale spintronics such as electrically written and magnetically read memories.

Two-dimensional multiferroics

Due to unprecedented application prospects such as high-density and low-power multistate storage, spintronics and nanoelectronics, two-dimensional (2D) multiferroics, coupled with at least two ferroic orders, have gotten a lot of interest in recent years. Multiple functions can be achieved in 2D multiferroics via coupling phenomena such as magnetoelectricity, piezoelectricity, and magnetoelasticity, which offers technical support for the creation of multifunctional devices. The research progress of 2D ferromagnetic-ferroelectric multiferroic materials, ferroelectric-ferroelastic multiferroic materials, and ferromagnetic-ferroelastic materials in recent years is reviewed in this paper. The categorization of 2D multiferroics is explored in terms of the multiple sources of ferroelectricity. The top-down approaches and the bottom-up methods used to fabricate 2D multiferroics materials are introduced. Finally, the authors outline potential research prospects and application scenarios for 2D multiferroic materials.

Designing Two-Dimensional Versatile Room-Temperature Ferromagnets via Assembling Large-Scale Magnetic Quantum Dots

Two-dimensional (2D) ferromagnets possess astonishing potential in new-concept spintronics. However, most of the reported intrinsic 2D ferromagnets show a low Curie temperature far below room temperature. Here, we propose a series of 2D magnetic covalent and metal organic frameworks (COFs/MOFs) by assembling triangular zigzag graphene quantum dots (TZGDs) with various linkages, involving small-sized TZGDs, nonmetal atoms, magnetic metal atoms, and molecules. Upon first-principles calculations, we demonstrate 2D magnetic semiconductors with an enhanced Curie temperature of up to 472 K can be realized through the strong p(d)-p direct exchange interaction between TZGDs and linkages. Particularly, the TZGD size hardly affects the Curie temperature, whereas linkages can modulate the Curie temperature significantly. The TZGD size and linkages can regulate the electronic and magnetic properties of TZGD-based 2D ferromagnets. Our results confirm the possibility of designing 2D ferromagnets based on TZGDs and motivate the research of 2D ferromagnets on magnetic quantum dots and molecular magnets.

Nanodots Derived from Layered Materials: Synthesis and Applications

Layered 2D materials, such as graphene, transition metal dichalcogenides, transition metal oxides, black phosphorus, graphitic carbon nitride, hexagonal boron nitride, and MXenes, have attracted intensive attention over the past decades owing to their unique properties and wide applications in electronics, catalysis, energy storage, biomedicine, etc. Further reducing the lateral size of layered 2D materials down to less than 10 nm allows for preparing a new class of nanostructures, namely, nanodots derived from layered materials. Nanodots derived from layered materials not only can exhibit the intriguing properties of nanodots due to the size confinement originating from the ultrasmall size, but also can inherit some unique properties of ultrathin layered 2D materials, making them promising candidates in a wide range of applications, especially in biomedicine and catalysis. Here, a comprehensive summary on the materials categories, advantages, synthesis methods, and potential applications of these nanodots derived from layered materials is provided. Finally, personal insights about the challenges and future directions in this promising research field are also given.

Controllable CO2 electrocatalytic reduction via ferroelectric switching on single atom anchored In2Se3 monolayer

Efficient and selective CO₂ electroreduction into chemical fuels promises to alleviate environmental pollution and energy crisis, but it relies on catalysts with controllable product selectivity and reaction path. Here, by means of first-principles calculations, we identify six ferroelectric catalysts comprising transition-metal atoms anchored on In₂Se₃ monolayer, whose catalytic performance can be controlled by ferroelectric switching based on adjusted d-band center and occupation of supported metal atoms. The polarization dependent activation allows effective control of the limiting potential of CO₂ reduction on TM@In₂Se₃ (TM = Ni, Pd, Rh, Nb, and Re) as well as the reaction paths and final products on Nb@In₂Se₃ and Re@In₂Se₃. Interestingly, the ferroelectric switching can even reactivate the stuck catalytic CO₂ reduction on Zr@In₂Se₃. The fairly low limiting potential and the unique ferroelectric controllable CO₂ catalytic performance on atomically dispersed transition-metals on In₂Se₃ clearly distinguish them from traditional single atom catalysts, and open an avenue toward improving catalytic activity and selectivity for efficient and controllable electrochemical CO₂ reduction reaction.

Unconventional distortion induced two-dimensional multiferroicity in a CrO3 monolayer

Two-dimensional (2D) multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high-density multistate data storage. However, intrinsic 2D multiferroic semiconductors with high thermal stability are still rare to date. Here, we propose a new mechanism of single-phase multiferroicity. Based on first-principles calculations, we predicted that in a CrO₃ monolayer, the unconventional distortion of the square antiprismatic crystal field on Cr-d orbitals will induce an in-plane electric polarization, making this material a single-phase multiferroic semiconductor. Importantly, the magnetic Curie temperature is estimated to be ∼220 K, which is quite high as compared to those of the recently reported 2D ferromagnetic and multiferroic semiconductors. Moreover, both ferroelectric and antiferroelectric phases are observed, providing opportunities for electrical control of magnetism and energy storage and conversion applications. These findings provide a comprehensive understanding of the magnetic and electric behavior in 2D multiferroics and will motivate further research on the application of related 2D electromagnetics and spintronics.

Conversation from antiferromagnetic MnBr2 to ferromagnetic Mn3Br8 monolayer with large MAE

A pressing need in low energy spintronics is two-dimensional (2D) ferromagnets with Curie temperature above the liquid-nitrogen temperature (77 K), and sizeable magnetic anisotropy. We studied Mn3Br8 monolayer which is obtained via inducing Mn vacancy at 1/4 population in MnBr2 monolayer. Such defective configuration is designed to change the coordination structure of the Mn-d5 and achieve ferromagnetism with sizeable magnetic anisotropy energy (MAE). Our calculations show that Mn3Br8 monolayer is a ferromagnetic (FM) half-metal with Curie temperature of 130 K, large MAE of - 2.33 meV per formula unit, and atomic magnetic moment of 13/3μB for the Mn atom. Additionally, Mn3Br8 monolayer maintains to be FM under small biaxial strain, whose Curie temperature under 5% compressive strain is 160 K. Additionally, both biaxial strain and carrier doping make the MAE increases, which mainly contributed by the magneto-crystalline anisotropy energy (MCE). Our designed defective structure of MnBr2 monolayer provides a simple but effective way to achieve ferromagnetism with large MAE in 2D materials.

Catalysis based on ferroelectrics: controllable chemical reaction with boosted efficiency

Catalysts, which can accelerate chemical reactions, show promising potential to alleviate environmental pollution and the energy crisis. However, their wide application is severely limited by their low efficiency and poor selectivity due to the recombination of photogenerated electron-hole pairs, the back-reaction of interactants. Accordingly, ferroelectrics have emerged as promising catalysts to address these issues with the advantages of promoted light adsorption, boosted catalytic efficiency as a result of their intrinsic polarization, suppressed electron-hole pair recombination, and superior selectivity via the ferroelectric switch. This review summarizes the recent research progress of catalytic studies based on ferroelectric materials and highlights the controllability of catalytic activity by the ferroelectric switch. More importantly, we also comprehensively highlight the underlying working mechanism of ferroelectric-controlled catalysis to facilitate a deep understanding of this novel chemical reaction and guide future experiments. Finally, the perspectives of catalysis based on ferroelectrics and possible research opportunities are discussed. This review is expected to inspire wide research interests and push ferroelectric catalysis to practical applications.

Spin-constrained optoelectronic functionality in two-dimensional ferromagnetic semiconductor heterojunctions

Two-dimensional (2D) van der Waals (vdW) engineering has brought about many extraordinary and new physics concepts and potential applications. Herein, we propose a new type of spin-constrained optoelectronic device developed using 2D ferromagnetic semiconductor heterostructures (FMSs). It is based on a photoexcited double-band-edge transition model, involved coupling between the interlayer magnetic order and the spin-polarized band structure and can achieve the reversible switch of band alignment via reversal of magnetization. We demonstrate that such a unique magnetic optoelectronic device can be realized with a CrBr₃/CrCl₃ heterojunction and other 2D FMS heterojunctions that have the same direction as the easy magnetization axis and have a switchable band alignment that allows reconfiguration. This study opens a new application window for 2D vdW heterostructures and enables the possibility for fully vdW-based ultra-compact spintronics devices.

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

Although only a few 2D materials have been predicted to possess ferroelectricity, 2D ferroelectrics are expected to play a dominant role in the upcoming nano era as important functional materials. The ferroelectric properties of 2D ferroelectrics are significantly different than those of traditional bulk ferroelectrics owing to their intrinsic size and surface effects. To date, 2D ferroelectrics have been reported to exhibit diverse properties ranging from bulk photovoltaic and piezoelectric/pyroelectric effects to the spontaneous valley and spin polarization. These properties are either dependent on ferroelectric polarization or coupled with it for easy electric control, thus making 2D ferroelectrics applicable to multifunctional nanodevices. At present, cumulative efforts are being made to explore 2D ferroelectrics in theories, experiments, and applications. Herein, such theories and methods are briefly introduced. Subsequently, intrinsic and extrinsic origins of 2D ferroelectricity are separately summarized. In addition, invented or laboratory-validated 2D ferroelectric-based applications are listed. Finally, the existing challenges and prospects of 2D ferroelectrics are discussed.

Intrinsic Polarization-Induced Enhanced Ferromagnetism and Self-Doped p-n Junctions in CrBr3/GaN van der Waals Heterostructures

Two-dimensional (2D) ferromagnetic (FM) semiconductors with a high Curie temperature and tunable electronic properties are a long-term pursuing target for the development of high-performance spin-dependent optoelectronic devices. Herein, on the basis of density functional theory calculations, we report a new strategy to tune the Curie temperature and electronic structures of a ferromagnetic CrBr₃ monolayer through the formation of CrBr₃/GaN van der Waals heterostructures. Our calculated results demonstrate that the Curie temperature and band alignment of CrBr₃/GaN heterostructures strongly depend on the thickness and polarization direction of the GaN layer. The combination of the CrBr₃ monolayer with N-terminated GaN nanosheets leads to enhanced FM coupling via superexchange interactions between the Cr-t_2g and Cr-e_g orbitals, consequently resulting in a Curie temperature of CrBr₃ of up to 67 K. Moreover, self-doped p-n junctions can be naturally formed in the heterostructures without additional modulation of external fields. The enhanced FM coupling and self-doping effect in the heterostructures are associated with the intrinsic polarization of the GaN layer that drives interfacial electron transfers from GaN to CrBr₃. Therefore, this work not only offers an efficient scheme to boost the Curie temperature of the CrBr₃ monolayer but also opens up a new route to realize nonvolatile van der Waals p-n junctions.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Small energy gap revealed in CrBr3 by scanning tunneling spectroscopy

CrBr₃ is a layered van der Waals material with magnetic ordering down to the 2D limit. For decades, based on optical measurements, it is believed that the energy gap of CrBr₃ is in the range of 1.68-2.1 eV. However, controversial results have indicated that the band gap of CrBr₃ is possibly smaller than that. An unambiguous determination of the energy gap is critical to the correct interpretations of the experimental results of CrBr₃. Here, we present the scanning tunneling microscopy and spectroscopy (STM/S) results of CrBr₃ thin and thick flakes exfoliated onto highly ordered pyrolytic graphite (HOPG) surfaces and density functional theory (DFT) calculations to reveal the small energy gap (peak-to-peak energy gap to be 0.57 ± 0.04 eV; or the onset signal energy gap to be 0.29 ± 0.05 eV from dI/dV spectra). Atomic resolution topography images show the defect-free crystal structure and the dI/dV spectra exhibit multiple peak features measured at 77 K. The conduction band - valence band peak pairs in the multi-peak dI/dV spectrum agree very well with all reported optical transitions. STM topography images of mono- and bi-layer CrBr₃ flakes exhibit edge degradation due to short air exposure (∼15 min) during sample transfer. The unambiguously determined small energy gap settles the controversy and is the key in better understanding CrBr₃ and similar materials.

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.