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Lupi E, Wexler RB, Meyers D, Zahradnik A, Jiang Y, Susarla S, Ramesh R, Martin LW, Rappe AM. Engineering Relaxor Behavior in (BaTiO 3 ) n /(SrTiO 3 ) n Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302012. [PMID: 37433562 DOI: 10.1002/adma.202302012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 07/02/2023] [Accepted: 07/10/2023] [Indexed: 07/13/2023]
Abstract
Complex-oxide superlattices provide a pathway to numerous emergent phenomena because of the juxtaposition of disparate properties and the strong interfacial interactions in these unit-cell-precise structures. This is particularly true in superlattices of ferroelectric and dielectric materials, wherein new forms of ferroelectricity, exotic dipolar textures, and distinctive domain structures can be produced. Here, relaxor-like behavior, typically associated with the chemical inhomogeneity and complexity of solid solutions, is observed in (BaTiO3 )n /(SrTiO3 )n (n = 4-20 unit cells) superlattices. Dielectric studies and subsequent Vogel-Fulcher analysis show significant frequency dispersion of the dielectric maximum across a range of periodicities, with enhanced dielectric constant and more robust relaxor behavior for smaller period n. Bond-valence molecular-dynamics simulations predict the relaxor-like behavior observed experimentally, and interpretations of the polar patterns via 2D discrete-wavelet transforms in shorter-period superlattices suggest that the relaxor behavior arises from shape variations of the dipolar configurations, in contrast to frozen antipolar stripe domains in longer-period superlattices (n = 16). Moreover, the size and shape of the dipolar configurations are tuned by superlattice periodicity, thus providing a definitive design strategy to use superlattice layering to create relaxor-like behavior which may expand the ability to control desired properties in these complex systems.
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Affiliation(s)
- Eduardo Lupi
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Robert B Wexler
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104-6323, USA
- Department of Chemistry, Washington University in St. Louis, St. Louis, MO, 63130, USA
| | - Derek Meyers
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Department of Physics, Oklahoma State University, Stillwater, OK, 74078, USA
| | - Anton Zahradnik
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Sandhya Susarla
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104-6323, USA
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Fernandez A, Acharya M, Lee HG, Schimpf J, Jiang Y, Lou D, Tian Z, Martin LW. Thin-Film Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108841. [PMID: 35353395 DOI: 10.1002/adma.202108841] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
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Affiliation(s)
- Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Han-Gyeol Lee
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jesse Schimpf
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Djamila Lou
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zishen Tian
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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Sharma Y, Lee MC, Pitike KC, Mishra KK, Zheng Q, Gao X, Musico BL, Mazza AR, Katiyar RS, Keppens V, Brahlek M, Yarotski DA, Prasankumar RP, Chen A, Cooper VR, Ward TZ. High Entropy Oxide Relaxor Ferroelectrics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11962-11970. [PMID: 35226475 DOI: 10.1021/acsami.2c00340] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Relaxor ferroelectrics are important in technological applications due to strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design materials in this class generally rely on substitutional doping as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO3 perovskite allows stabilization of relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are utilized to synthesize single-crystal Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 [Ba(5B)O] films. The high levels of configurational disorder present in this system are found to influence dielectric relaxation, phase transitions, nanopolar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy, and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first-principles theory calculations are used to predict possible combinations of cations to design relaxor ferroelectrics and quantify the relative feasibility of synthesizing these highly disordered single-phase perovskite systems. The ability to stabilize single-phase perovskites with various cations on the B-sites offers possibilities for designing high-performance relaxor ferroelectric materials for piezoelectric, pyroelectric, and electrocaloric applications.
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Affiliation(s)
- Yogesh Sharma
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Min-Cheol Lee
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Krishna Chaitanya Pitike
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Karuna K Mishra
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377, United States
| | - Qiang Zheng
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xiang Gao
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Brianna L Musico
- Sigma Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Alessandro R Mazza
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ram S Katiyar
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377, United States
| | - Veerle Keppens
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Matthew Brahlek
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Dmitry A Yarotski
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Rohit P Prasankumar
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Valentino R Cooper
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - T Zac Ward
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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Belhadi J, Gabor U, Uršič H, Daneu N, Kim J, Tian Z, Koster G, Martin LW, Spreitzer M. Growth mode and strain effect on relaxor ferroelectric domains in epitaxial 0.67Pb(Mg 1/3Nb 2/3)O 3–0.33PbTiO 3/SrRuO 3 heterostructures. RSC Adv 2021; 11:1222-1232. [PMID: 35424096 PMCID: PMC8693390 DOI: 10.1039/d0ra10107a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Accepted: 12/21/2020] [Indexed: 11/23/2022] Open
Abstract
Controlling the growth of complex relaxor ferroelectric thin films and understanding the relationship between biaxial strain–structural domain characteristics are desirable for designing materials with a high electromechanical response. For this purpose, epitaxial thin films free of extended defects and secondary phases are urgently needed. Here, we used optimized growth parameters and target compositions to obtain epitaxial (40–45 nm) 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3/(20 nm) SrRuO3 (PMN–33PT/SRO) heterostructures using pulsed-laser deposition (PLD) on singly terminated SrTiO3 (STO) and ReScO3 (RSO) substrates with Re = Dy, Tb, Gd, Sm, and Nd. In situ reflection high-energy electron diffraction (RHEED) and high-resolution X-ray diffraction (HR-XRD) analysis confirmed high-quality and single-phase thin films with smooth 2D surfaces. High-resolution scanning transmission electron microscopy (HR-STEM) revealed sharp interfaces and homogeneous strain further confirming the epitaxial cube-on-cube growth mode of the PMN–33PT/SRO heterostructures. The combined XRD reciprocal space maps (RSMs) and piezoresponse force microscopy (PFM) analysis revealed that the domain structure of the PMN–33PT heterostructures is sensitive to the applied compressive strain. From the RSM patterns, an evolution from a butterfly-shaped diffraction pattern for mildly strained PMN–33PT layers, which is evidence of stabilization of relaxor domains, to disc-shaped diffraction patterns for high compressive strains with a highly distorted tetragonal structure, is observed. The PFM amplitude and phase of the PMN–33PT thin films confirmed the relaxor-like for a strain state below ∼1.13%, while for higher compressive strain (∼1.9%) the irregularly shaped and poled ferroelectric domains were observed. Interestingly, the PFM phase hysteresis loops of the PMN–33PT heterostructures grown on the SSO substrates (strain state of ∼0.8%) exhibited an enhanced coercive field which is about two times larger than that of the thin films grown on GSO and NSO substrates. The obtained results show that epitaxial strain engineering could serve as an effective approach for tailoring and enhancing the functional properties in relaxor ferroelectrics. Strain engineering in epitaxial PMN–33PT films revealed an evolution from a butterfly-shaped diffraction for mildly strained films, evidencing the stabilization of relaxor domains, to disc-shaped diffraction patterns for high compressive strains.![]()
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Affiliation(s)
- Jamal Belhadi
- Advanced Materials Department
- Jožef Stefan Institute
- Ljubljana
- Slovenia
| | - Urška Gabor
- Advanced Materials Department
- Jožef Stefan Institute
- Ljubljana
- Slovenia
| | - Hana Uršič
- Electronic Ceramics Department
- Jožef Stefan Institute
- Ljubljana
- Slovenia
| | - Nina Daneu
- Advanced Materials Department
- Jožef Stefan Institute
- Ljubljana
- Slovenia
| | - Jieun Kim
- Department of Materials Science and Engineering
- University of California
- Berkeley
- USA
| | - Zishen Tian
- Department of Materials Science and Engineering
- University of California
- Berkeley
- USA
| | - Gertjan Koster
- Advanced Materials Department
- Jožef Stefan Institute
- Ljubljana
- Slovenia
- MESA+ Institute for Nanotechnology
| | - Lane W. Martin
- Department of Materials Science and Engineering
- University of California
- Berkeley
- USA
| | - Matjaž Spreitzer
- Advanced Materials Department
- Jožef Stefan Institute
- Ljubljana
- Slovenia
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Kim J, Saremi S, Acharya M, Velarde G, Parsonnet E, Donahue P, Qualls A, Garcia D, Martin LW. Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films. Science 2020; 369:81-84. [PMID: 32631889 DOI: 10.1126/science.abb0631] [Citation(s) in RCA: 66] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2020] [Accepted: 05/04/2020] [Indexed: 01/25/2023]
Abstract
Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.
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Affiliation(s)
- Jieun Kim
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Sahar Saremi
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Gabriel Velarde
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Patrick Donahue
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - David Garcia
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
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