1
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Pan H, Zhu M, Banyas E, Alaerts L, Acharya M, Zhang H, Kim J, Chen X, Huang X, Xu M, Harris I, Tian Z, Ricci F, Hanrahan B, Spanier JE, Hautier G, LeBeau JM, Neaton JB, Martin LW. Clamping enables enhanced electromechanical responses in antiferroelectric thin films. NATURE MATERIALS 2024; 23:944-950. [PMID: 38783106 DOI: 10.1038/s41563-024-01907-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Accepted: 04/24/2024] [Indexed: 05/25/2024]
Abstract
Thin-film materials with large electromechanical responses are fundamental enablers of next-generation micro-/nano-electromechanical applications. Conventional electromechanical materials (for example, ferroelectrics and relaxors), however, exhibit severely degraded responses when scaled down to submicrometre-thick films due to substrate constraints (clamping). This limitation is overcome, and substantial electromechanical responses in antiferroelectric thin films are achieved through an unconventional coupling of the field-induced antiferroelectric-to-ferroelectric phase transition and the substrate constraints. A detilting of the oxygen octahedra and lattice-volume expansion in all dimensions are observed commensurate with the phase transition using operando electron microscopy, such that the in-plane clamping further enhances the out-of-plane expansion, as rationalized using first-principles calculations. In turn, a non-traditional thickness scaling is realized wherein an electromechanical strain (1.7%) is produced from a model antiferroelectric PbZrO3 film that is just 100 nm thick. The high performance and understanding of the mechanism provide a promising pathway to develop high-performance micro-/nano-electromechanical systems.
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Affiliation(s)
- Hao Pan
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Menglin Zhu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ella Banyas
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, University of California, Berkeley, CA, USA
| | - Louis Alaerts
- Thayer School of Engineering, Dartmouth College, Hanover, NH, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jiyeob Kim
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Michael Xu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Isaac Harris
- Department of Physics, University of California, Berkeley, CA, USA
| | - Zishen Tian
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Francesco Ricci
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, University of California, Berkeley, CA, USA
| | | | - Jonathan E Spanier
- Department of Mechanical Engineering and Mechanics, Materials Science and Engineering, and Physics, Drexel University, Philadelphia, PA, USA
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, Hanover, NH, USA
| | - James M LeBeau
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jeffrey B Neaton
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, University of California, Berkeley, CA, USA
- Kavli Energy Nanosciences Institute, University of California, Berkeley, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Departments of Materials Science and NanoEngineering, Chemistry, and Physics and Astronomy, Rice University, Houston, TX, USA.
- Rice Advanced Materials Institute, Rice University, Houston, TX, USA.
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2
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Yu Z, Fan N, Fu Z, He B, Yan S, Cai H, Chen X, Zhang L, Zhang Y, Xu B, Wang G, Xu F. Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO 3 by strain-mediated phase separation. Nat Commun 2024; 15:3438. [PMID: 38653960 DOI: 10.1038/s41467-024-47776-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Accepted: 04/12/2024] [Indexed: 04/25/2024] Open
Abstract
PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is threefold-modulated ferrielectric, which challenges the generally accepted antiferroelectric configuration. However, such a novel ferrielectric phase was predicted only to be accessible at low temperatures. Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in PbZrO3/SrTiO3 thin film. We demonstrate that the phase separation occurs spontaneously in quasi-periodic stripe-like patterns under a compressive misfit strain and can be tailored by varying the film thickness. The ferrielectric phase strikingly exhibitsa threefold modulation period with a nearly up-up-down configuration, which could be stabilized and manipulated by the formation and evolution of interfacial defects under applied strain. The present results construct a fertile ground for further exploring the physical properties and applications based on the novel ferrielectric phase.
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Affiliation(s)
- Ziyi Yu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Ningbo Fan
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Zhengqian Fu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Biao He
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shiguang Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Henghui Cai
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Xuefeng Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Linlin Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Bin Xu
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Genshui Wang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Fangfang Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
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3
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Gao B, Zhou Z, Deng S, Lee K, Fukuda M, Hu L, Azuma M, Liu H, Chen J. Emergent Three-Dimensional Electric Dipole Sinewave in Bulk Perovskite Oxides. NANO LETTERS 2024; 24:3118-3124. [PMID: 38421801 DOI: 10.1021/acs.nanolett.3c04957] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
The magnetic and electric dipoles of ferroics play a central role in their fascinating properties. In particular, topological configurations have shown promising potential for use in novel electromechanical and electronic devices. Magnetic configurations from simple collinear to complex topological are well-documented. In contrast, many complex topological features in the electric counterpart remain unexplored. Here, we report the first example of three-dimensional electric dipole sinewave topological structure in a PbZrO3-based bulk perovskite, which presents an interesting triple-hysteresis loop macroscopically. This polar configuration consists of two orthogonal sinewave electric dipole modulations decoded from a polar incommensurate phase by advanced diffraction and atomic-resolution imaging techniques. The resulting topology is unraveled to be the competition between the antiferroelectric and ferroelectric states, stabilized by the modulation of the Pb 6s2 lone pair and the antiferrodistortive effect. These findings further reinforce the similarity of the magnetic and electric topologies.
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Affiliation(s)
- Botao Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Zhengyang Zhou
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Koomok Lee
- Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Masayuki Fukuda
- Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Lei Hu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Masaki Azuma
- Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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4
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Wang L, Zhou X, Su M, Zhang Y, Li R, Zhang R, Wu X, Wu Z, Wong WPD, Xu QH, He Q, Loh KP. In-Plane Ferrielectric Order in van der Waals β'-In 2Se 3. ACS NANO 2024; 18:809-818. [PMID: 38108268 DOI: 10.1021/acsnano.3c09250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
van der Waals ferroic materials exhibit rich potential for implementing future generation functional devices. Among these, layered β'-In2Se3 has fascinated researchers with its complex superlattice and domain structures. As opposed to ferroelectric α-In2Se3, the understanding of β'-In2Se3 ferroic properties remains unclear because ferroelectric, antiferroelectric, and ferroelastic characteristics have been separately reported in this material. To develop useful applications, it is necessary to understand the microscopic structural properties and their correlation with macroscopic device characteristics. Herein, using scanning transmission electron microscopy (STEM), we observed that the arrangement of dipoles deviates from the ideal double antiparallel antiferroelectric character due to competition between antiferroelectric and ferroelectric structural ordering. By virtue of second-harmonic generation, four-dimensional STEM, and in-plane piezoresponse force microscopy, the long-range inversion-breaking symmetry, uncompensated local polarization, and net polarization domains are unambiguously verified, revealing β'-In2Se3 as an in-plane ferrielectric layered material. Additionally, our device study reveals analogous resistive switching behaviors of different types owing to polarization switching, defect migration, and defect-induced charge trapping/detrapping processes.
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Affiliation(s)
- Lin Wang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Mengyao Su
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Yishu Zhang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Runlai Li
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Rongrong Zhang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Xiao Wu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Zhenyue Wu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Walter P D Wong
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Qing-Hua Xu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
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5
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Ding H, Hadaeghi N, Zhang MH, Jiang TS, Zintler A, Carstensen L, Zhang YX, Kleebe HJ, Zhang HB, Molina-Luna L. Translational Antiphase Boundaries in NaNbO 3 Antiferroelectrics. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59964-59972. [PMID: 38085261 DOI: 10.1021/acsami.3c15141] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Planar defects are known to be of importance in affecting the functional properties of materials. Translational antiphase boundaries (APBs) in particular have attracted considerable attention in perovskite oxides, but little is known in lead-free antiferroelectric oxides that are promising candidates for energy storage applications. Here, we present a study of translational APBs in prototypical antiferroelectric NaNbO3 using aberration-corrected (scanning) transmission electron microscopy (TEM) techniques at different length scales. The translational APBs in NaNbO3 are characterized by a 2-fold-modulated structure, which is antipolar in nature and exhibits a high density, different from the polar nature and lower density in PbZrO3. The high stability of translational APBs against external electric fields and elevated temperatures was revealed using ex situ and in situ TEM experiments and is expected to be associated with their antipolar nature. Density functional theory calculations demonstrate that translational APBs possess only slightly higher free energy than the antiferroelectric and ferroelectric phase energies with differences of 29 and 33 meV/f.u., respectively, justifying their coexistence down to the nanoscale at room temperature. These results provide a detailed atomistic elucidation of translational APBs in NaNbO3 with antipolar character and stability against external stimuli, establishing the basis of defect engineering of antiferroelectrics for energy storage devices.
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Affiliation(s)
- Hui Ding
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Niloofar Hadaeghi
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Mao-Hua Zhang
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Tian-Shu Jiang
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Alexander Zintler
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Leif Carstensen
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Yi-Xuan Zhang
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Hans-Joachim Kleebe
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Hong-Bin Zhang
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
| | - Leopoldo Molina-Luna
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64289, Germany
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6
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Ma T. Mapping Atomic Displacements in Perovskite Structures using VecMap. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:732-733. [PMID: 37613340 DOI: 10.1093/micmic/ozad067.361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- Tao Ma
- Michigan Center for Materials Characterization, University of Michigan, Ann Arbor, MI, United States
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7
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Liu Y, Niu R, Majchrowski A, Roleder K, Cordero-Edwards K, Cairney JM, Arbiol J, Catalan G. Translational Boundaries as Incipient Ferrielectric Domains in Antiferroelectric PbZrO_{3}. PHYSICAL REVIEW LETTERS 2023; 130:216801. [PMID: 37295088 DOI: 10.1103/physrevlett.130.216801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Revised: 02/26/2023] [Accepted: 04/28/2023] [Indexed: 06/12/2023]
Abstract
In the archetypal antiferroelectric PbZrO_{3}, antiparallel electric dipoles cancel each other, resulting in zero spontaneous polarization at the macroscopic level. Yet in actual hysteresis loops, the cancellation is rarely perfect and some remnant polarization is often observed, suggesting the metastability of polar phases in this material. In this work, using aberration-corrected scanning transmission electron microscopy methods on a PbZrO_{3} single crystal, we uncover the coexistence of the common antiferroelectric phase and a ferrielectric phase featuring an electric dipole pattern of ↓↑↓. This dipole arrangement, predicted by Aramberri et al. to be the ground state of PbZrO_{3} at 0 K, appears at room temperature in the form of translational boundaries. The dual nature of the ferrielectric phase, both a distinct phase and a translational boundary structure, places important symmetry constraints on its growth. These are overcome by sideways motion of the boundaries, which aggregate to form arbitrarily wide stripe domains of the polar phase embedded within the antiferroelectric matrix.
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Affiliation(s)
- Ying Liu
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Spain
| | - Ranming Niu
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia
- Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Andrzej Majchrowski
- Institute of Applied Physics, Military University of Technology, Ulica Kaliskiego 2, 00-908 Warsaw, Poland
| | - Krystian Roleder
- Institute of Physics, University of Silesia, Ulica 75 Pułku Piechoty 1, 41-500 Chorzów, Poland
| | - Kumara Cordero-Edwards
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Spain
| | - Julie M Cairney
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia
- Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Spain
- Institut Català de Recerca i Estudis Avançats (ICREA), Barcelona 08010, Catalunya, Spain
| | - Gustau Catalan
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Spain
- Institut Català de Recerca i Estudis Avançats (ICREA), Barcelona 08010, Catalunya, Spain
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8
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Li X, Zhong H, Lin T, Meng F, Gao A, Liu Z, Su D, Jin K, Ge C, Zhang Q, Gu L. Polarization Switching and Correlated Phase Transitions in Fluorite-Structure ZrO 2 Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2207736. [PMID: 37044111 DOI: 10.1002/adma.202207736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 04/09/2023] [Indexed: 06/04/2023]
Abstract
Unconventional ferroelectricity in fluorite-structure oxides enables tremendous opportunities in nanoelectronics owing to their superior scalability and silicon compatibility. However, their polarization order and switching process remain elusive due to the challenges of visualizing oxygen ions in nanocrystalline films. In this work, the oxygen shifting during polarization switching and correlated polar-nonpolar phase transitions are directly captured among multiple metastable phases in freestanding ZrO2 thin films by low-dose integrated differential phase-contrast scanning transmission electron microscopy (iDPC-STEM). Bidirectional transitions between antiferroelectric and ferroelectric orders and interfacial polarization relaxation are clarified at unit-cell scale. Meanwhile, polarization switching is strongly correlated with Zr-O displacement in reversible martensitic transformation between monoclinic and orthorhombic phases and two-step tetrahedral-to-orthorhombic phase transition. These findings provide atomic insights into the transition pathways between metastable polymorphs and unravel the evolution of polarization orders in (anti)ferroelectric fluorite oxides.
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Affiliation(s)
- Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Fanqi Meng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ang Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dong Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Yangtze River Delta Physics Research Center Co. Ltd., Liyang, 213300, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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9
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Jiang RJ, Cao Y, Geng WR, Zhu MX, Tang YL, Zhu YL, Wang Y, Gong F, Liu SZ, Chen YT, Liu J, Liu N, Wang JH, Lv XD, Chen SJ, Ma XL. Atomic Insight into the Successive Antiferroelectric-Ferroelectric Phase Transition in Antiferroelectric Oxides. NANO LETTERS 2023; 23:1522-1529. [PMID: 36722976 DOI: 10.1021/acs.nanolett.2c04972] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Antiferroelectrics characterized by voltage-driven reversible transitions between antiparallel and parallel polarity are promising for cutting-edge electronic and electrical power applications. Wide-ranging explorations revealing the macroscopic performances and microstructural characteristics of typical antiferroelectric systems have been conducted. However, the underlying mechanism has not yet been fully unraveled, which depends largely on the atomistic processes. Herein, based on atomic-resolution transmission electron microscopy, the deterministic phase transition pathway along with the underlying lattice-by-lattice details in lead zirconate thin films was elucidated. Specifically, we identified a new type of ferrielectric-like dipole configuration with both angular and amplitude modulations, which plays the role of a precursor for a subsequent antiferroelectric to ferroelectric transformation. With the participation of the ferrielectric-like phase, the phase transition pathways driven by the phase boundary have been revealed. We provide new insights into the consecutive phase transformation in low-dimensional lead zirconate, which thus would promote potential antiferroelectric-based multifunctional devices.
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Affiliation(s)
- Ru-Jian Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Mei-Xiong Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
| | - Yin-Lian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
| | - Fenghui Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Su-Zhen Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Yu-Ting Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Jiaqi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Nan Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Jing-Hui Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Xiao-Dong Lv
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Shuang-Jie Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
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10
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Gao B, Zhou W, Liu H, Qi H, Deng S, Liu S, Chen J. What Determines the Critical Electric Field of AFE-to-FE in Pb(Zr,Sn,Ti)O 3-Based Perovskites? NANO LETTERS 2023; 23:948-953. [PMID: 36716221 DOI: 10.1021/acs.nanolett.2c04361] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Electric-field-induced antiferroelectric-ferroelectric (AFE-FE) phase transition is a prominent feature of antiferroelectric (AFE) materials. The critical electric field of this phase transition is crucial for the device performance of AEFs in many applications, but the determining factor of the critical electric field is still unclear. Here, we have established the correlation between the underlying structure and the critical electric field by using in situ synchrotron X-ray diffraction and high-resolution neutron diffraction in Pb(Zr,Sn,Ti)O3-based antiferroelectrics. It is found that the critical electric field is determined by the angle between the average polarization vector in the incommensurate AFE state and the [111]P polarization direction in the rhombohedral FE state. A large polarization rotation angle gives rise to a large critical electric field. Further, density functional theory (DFT) calculations corroborate that the lower energy is required for driving a smaller angle polarization rotation. Our discovery will offer guidance to optimize the performance of AFE materials.
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Affiliation(s)
- Botao Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, Shanghai 201899, China
| | - Wenjie Zhou
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310030, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - He Qi
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Jun Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
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11
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Lai Y, Zheng J, Lu S, Wang Y, Duan C, Yu P, Zheng Y, Huang R, Chang L, Chu M, Hsu J, Chu Y. Antiferroelectric PbSnO 3 Epitaxial Thin Films. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203863. [PMID: 36285684 PMCID: PMC9762279 DOI: 10.1002/advs.202203863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2022] [Revised: 09/22/2022] [Indexed: 06/16/2023]
Abstract
In condensed matter physics, oxide materials show various intriguing physical properties. Therefore, many efforts are made in this field to develop functional oxides. Due to the excellent potential for tin-based perovskite oxides, an expansion of new related functional compounds is crucial. This work uses a heteroepitaxial approach supported by theoretical calculation to stabilize PbSnO3 thin films with different orientations. The analyses of X-ray diffraction and transmission electron microscopy unveil the structural information. A typical antiferroelectric feature with double hysteresis and butterfly loops is observed through electrical characterizations consistent with the theoretical prediction. The phase transition is monitored, and the transition temperatures are determined based on temperature-dependent structural and electrical characterizations. Furthermore, the microscopic antiferroelectric order is noticed under atomic resolution images via scanning transmission electron microscopy. This work offers a breakthrough in synthesizing epitaxial PbSnO3 thin films and comprehensively understanding its anisotropic antiferroelectric behavior.
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Affiliation(s)
- Yu‐Hong Lai
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Jun‐Ding Zheng
- Key Laboratory of Polar Materials and DevicesMinistry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Si‐Cheng Lu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of PhysicsTsinghua UniversityBeijing100084China
| | - Yin‐Kuo Wang
- Center for General EducationNational Taiwan Normal UniversityTaipei10610Taiwan
| | - Chun‐Gang Duan
- Key Laboratory of Polar Materials and DevicesMinistry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of PhysicsTsinghua UniversityBeijing100084China
| | - Yun‐Zhe Zheng
- Key Laboratory of Polar Materials and DevicesMinistry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Rong Huang
- Key Laboratory of Polar Materials and DevicesMinistry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Li Chang
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Ming‐Wen Chu
- Center for Condensed Matter Sciences and Center of Atomic Initiative for New MaterialsNational Taiwan UniversityTaipei106Taiwan
| | - Ju‐Hung Hsu
- Integrated Service TechnologyHsinchu300Taiwan
| | - Ying‐Hao Chu
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
- Center for Emergent Functional Matter ScienceNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
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12
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Er X, Chen P, Yu X, Wang Q, Bian Z, Zhan Q. Artificially induced ferroelectric-like behavior in an antiferroelectric sandwich structure by interface engineering. Ann Ital Chir 2022. [DOI: 10.1016/j.jeurceramsoc.2022.09.011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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13
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Si Y, Zhang T, Chen Z, Zhang Q, Xu S, Lin T, Huang H, Zhou C, Chen S, Liu S, Dong Y, Liu C, Tang Y, Lu Y, Jin K, Guo EJ, Lin X. Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO 3 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51096-51104. [PMID: 36318085 DOI: 10.1021/acsami.2c14291] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Antiferroelectric PbZrO3 has attracted renewed interest in recent years because of its unique properties and wide range of potential applications. However, the nature of antiferroelectricity and its evolution with the electric field and temperature remain controversial, mostly due to the difficulty of obtaining high-quality single-crystal samples. The lack of consensus regarding the phase transition in PbZrO3 is not only important on a fundamental side but also greatly hinders further applications. Herein, high-quality PbZrO3 epitaxial thin films are successfully fabricated by pulsed laser deposition. The structural and physical properties of the films are systematically studied via a combination of electric property measurements, X-ray diffraction, scanning transmission electron microscopy imaging, and second-harmonic generation studies. Our studies unveil the noncentrosymmetric nature of PbZrO3 films at room temperature. Moreover, the Curie temperature increased to 270°, ∼40° higher than that in the bulk, and no intermediate ferroelectric phase was observed. Besides, an incipient ferroelectric with relaxor-like behavior above the Curie temperature due to the existence of a local polar cluster in the high-temperature paraelectric phase is experimentally observed for the first time. Our studies provide a better understanding of PbZrO3 thin films and pave the way for practical applications of antiferroelectric material in modern electronic devices.
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Affiliation(s)
- Yangyang Si
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
| | - Tianfu Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuai Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Haoliang Huang
- Anhui Laboratory of Advanced Photon Science and Technology, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chao Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
| | - Shanquan Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
| | - Suzhen Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, Liaoning 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, Liaoning 110016, China
| | - Yongqi Dong
- National Synchrotron Radiation Laboratory and CAS Key Laboratory of Materials for Energy Conversion, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 China
| | - Chenhan Liu
- Micro- and Nano-Scale Thermal Measurement and Thermal Management Laboratory, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, Jiangsu 210046, P. R. China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, Liaoning 110016, China
| | - Yalin Lu
- Anhui Laboratory of Advanced Photon Science and Technology, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xi Lin
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong 518055, China
- Blockchain Development and Research Institute, Harbin Institute of Technology, Shenzhen, Guangdong 518055, P.R. China
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, Heilongjiang 150001, P. R. China
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14
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Xu K, Shi X, Dong S, Wang J, Huang H. Antiferroelectric Phase Diagram Enhancing Energy-Storage Performance by Phase-Field Simulations. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25770-25780. [PMID: 35614878 DOI: 10.1021/acsami.2c05168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Antiferroelectric materials have shown potential applications in energy storage. However, controlling and improving the energy-storage performance in antiferroelectric remain challenging. Here, a domain structure and energy-storage performance diagram for Pb(Zr1-xTix)O3 (x ≤ 0.1) single crystal are investigated via phase-field simulations. Controlling the ratio of domain wall coefficients λ and g can tune the periodicities of the antiferroelectric stripe domain and generate a complicated topological domain. By decreasing the antiferroelectric domain periodicity, one can achieve high recoverable energy-storage density (Wrec = 30.24 J/cm3) with an efficiency of 80.9%. In addition, Pb(Zr1-xTix)O3 (x ≤ 0.1) thin-film system has also been investigated. Positive equiaxial misfit strain significantly enhances recoverable energy-storage density up to 21.96 J/cm3 with an efficiency of 84.9%. Our results offer another train of thought to tune antiferroelectric domain structure, which provides the idea to design high-energy-density materials in experiments.
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Affiliation(s)
- Ke Xu
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaoming Shi
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Shouzhe Dong
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
- School of Mechatronic Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jing Wang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Houbing Huang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
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15
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Ge G, Shi C, Chen C, Shi Y, Yan F, Bai H, Yang J, Lin J, Shen B, Zhai J. Tunable Domain Switching Features of Incommensurate Antiferroelectric Ceramics Realizing Excellent Energy Storage Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201333. [PMID: 35393735 DOI: 10.1002/adma.202201333] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Revised: 03/25/2022] [Indexed: 06/14/2023]
Abstract
An incommensurate modulated antiferroelectric phase is a key part of ideal candidate materials for the next generation of dielectric ceramics with excellent energy storage properties. However, there is less research carried out when considering its relatively low polarization response. Here, the incommensurate phase is modulated by stabilizing the antiferroelectric phase and the energy storage performance of the incommensurate phase under ultrahigh electric field is studied. The tape-casting method is applied to construct dense and thin ceramics. La3+ doping induces a room-temperature incommensurate antiferroelectric orthorhombic matrix. With little Cd2+ , the extremely superior energy storage performances arose as follows: when 0.03, the recoverable energy storage density reaches ≈19.3 J cm-3 , accompanying an ultrahigh energy storage efficiency of ≈91% (870 kV cm-1 ); also, a giant discharge energy density of ≈15.4 J cm-3 emerges during actual operation. In situ observations demonstrate that these superior energy storage properties originate from the phase transition from the incommensurate antiferroelectric orthorhombic phase to the induced rhombohedral relaxor ferroelectric one. The adjustable incommensurate period affects the depolarization response. The revealed phase-transition mechanism enriches the existing antiferroelectric-ferroelectric transition. Attention to the incommensurate phase can provide a reference for the selection of the next generation of high-performance antiferroelectric materials.
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Affiliation(s)
- Guanglong Ge
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Cheng Shi
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Chukai Chen
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Yunjing Shi
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Fei Yan
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Hairui Bai
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Jing Yang
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Jinfeng Lin
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Bo Shen
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Jiwei Zhai
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
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16
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Li Z, Fu Z, Cai H, Hu T, Yu Z, Luo Y, Zhang L, Yao H, Chen X, Zhang S, Wang G, Dong X, Xu F. Discovery of electric devil's staircase in perovskite antiferroelectric. SCIENCE ADVANCES 2022; 8:eabl9088. [PMID: 35385309 PMCID: PMC8986110 DOI: 10.1126/sciadv.abl9088] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
The devil's staircase, describing step-like function for two competing frequencies, is well known over a wide range of dynamic systems including Huyghens' clocks, Josephson junction, and chemical reaction. In condensed matter physics, the devil's staircase has been observed in spatially modulated structures, such as magnetic ordering. It draws widespread attentions because it plays a crucial role in the fascinating phenomena including phase-locking behaviors, commensurate-incommensurate phase transition, and spin-valve effect. Here, we report the observation of polymorphic phase transitions consisting of several steps in PbZrO3-based system-namely, electric devil's staircase-originated from competing ferroelectric and antiferroelectric interactions. We fully characterize a specific electric dipole configuration by decomposing this competitive interaction in terms of basic structure and modulation function. Of particular interest is that the occurrence of many degenerate electric dipole configurations in devil's staircase enables superior energy storage performance. These observations are of great significance for exploring more substantive magnetic-electric correspondence and engineering practical high-power antiferroelectric capacitors.
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Affiliation(s)
- Zhenqin Li
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhengqian Fu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Henghui Cai
- University of Chinese Academy of Sciences, Beijing 100049, China
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Tengfei Hu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Ziyi Yu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yue Luo
- University of Chinese Academy of Sciences, Beijing 100049, China
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Linlin Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Heliang Yao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xuefeng Chen
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Genshui Wang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xianlin Dong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Fangfang Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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17
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Wei XK, Dunin-Borkowski RE, Mayer J. Structural Phase Transition and In-Situ Energy Storage Pathway in Nonpolar Materials: A Review. MATERIALS 2021; 14:ma14247854. [PMID: 34947446 PMCID: PMC8707040 DOI: 10.3390/ma14247854] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Revised: 12/09/2021] [Accepted: 12/16/2021] [Indexed: 11/27/2022]
Abstract
Benefitting from exceptional energy storage performance, dielectric-based capacitors are playing increasingly important roles in advanced electronics and high-power electrical systems. Nevertheless, a series of unresolved structural puzzles represent obstacles to further improving the energy storage performance. Compared with ferroelectrics and linear dielectrics, antiferroelectric materials have unique advantages in unlocking these puzzles due to the inherent coupling of structural transitions with the energy storage process. In this review, we summarize the most recent studies about in-situ structural phase transitions in PbZrO3-based and NaNbO3-based systems. In the context of the ultrahigh energy storage density of SrTiO3-based capacitors, we highlight the necessity of extending the concept of antiferroelectric-to-ferroelectric (AFE-to-FE) transition to broader antiferrodistortive-to-ferrodistortive (AFD-to-FD) transition for materials that are simultaneously ferroelastic. Combining discussion of the factors driving ferroelectricity, electric-field-driven metal-to-insulator transition in a (La1−xSrx)MnO3 electrode is emphasized to determine the role of ionic migration in improving the storage performance. We believe that this review, aiming at depicting a clearer structure–property relationship, will be of benefit for researchers who wish to carry out cutting-edge structure and energy storage exploration.
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Affiliation(s)
- Xian-Kui Wei
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich, 52425 Jülich, Germany; (R.E.D.-B.); (J.M.)
- Correspondence:
| | - Rafal E. Dunin-Borkowski
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich, 52425 Jülich, Germany; (R.E.D.-B.); (J.M.)
| | - Joachim Mayer
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich, 52425 Jülich, Germany; (R.E.D.-B.); (J.M.)
- Gemeinschaftslabor für Elektronenmikroskopie (GFE), RWTH Aachen University, 52074 Aachen, Germany
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18
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Observation of negative capacitance in antiferroelectric PbZrO 3 Films. Nat Commun 2021; 12:4215. [PMID: 34244506 PMCID: PMC8270919 DOI: 10.1038/s41467-021-24530-w] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2020] [Accepted: 06/22/2021] [Indexed: 11/29/2022] Open
Abstract
Negative capacitance effect in ferroelectric materials provides a solution to the energy dissipation problem induced by Boltzmann distribution of electrons in conventional electronics. Here, we discover that besides ferroelectrics, the antiferroelectrics based on Landau switches also have intrinsic negative capacitance effect. We report both the static and transient negative capacitance effect in antiferroelectric PbZrO3 films and reveal its possible physical origin. The capacitance of the capacitor of the PbZrO3 and paraelectric heterostructure is demonstrated to be larger than that of the isolated paraelectric capacitor at room temperature, indicating the existence of the static negative capacitance. The opposite variation trends of the voltage and charge transients in a circuit of the PbZrO3 capacitor in series with an external resistor demonstrate the existence of transient negative capacitance effect. Strikingly, four negative capacitance effects are observed in the antiferroelectric system during one cycle scan of voltage pulses, different from the ferroelectric counterpart with two negative capacitance effects. The polarization vector mapping, electric field and free energy analysis reveal the rich local regions of negative capacitance effect with the negative dP/dE and (δ2G)⁄(δD2), producing stronger negative capacitance effect. The observation of negative capacitance effect in antiferroelectric films significantly extends the range of its potential application and reduces the power dissipation further. The observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin.
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19
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Gao B, Liu H, Zhou Z, Deng S, Sun J, Chen J. An Intriguing Polarization Configuration of Mixed Ising- and Néel-Type Model in the Prototype PbZrO 3-Based Antiferroelectrics. Inorg Chem 2021; 60:3232-3237. [PMID: 33560114 DOI: 10.1021/acs.inorgchem.0c03533] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Antiferroelectrics are of great academic and technological interest due to their excellent strain and energy storage properties, while the incommensurate modulation-related complex configuration of polarization remains unclear. In this study, an intriguing polarization configuration of mixed Ising- and Néel-type has been established in the prototype PbZrO3-based antiferroelectric materials via the combination of high-resolution synchrotron X-ray and neutron diffraction investigations. Such unusual polarization configuration of antiferroelectrics shows the internal coupling, which mainly contributes from the displacement of the A-site and the distortion of the AO12 and BO6 polyhedra. The electric dipole oscillates in the (001)P plane, and its magnitude and direction show obvious modulation characteristics resulting in a neither antiparallel nor fully compensated polarization configuration, which is completely different from the traditional view of antiferroelectricity. There is an antiferroelectric feature along the [110]P direction, while there is a ferrielectric one along the [1̅10]P direction in which the net polarization can reach 12 μC/cm2. The maximum local polarization can reach 4.3 μC/cm2 in the [110]P direction and 27.6 μC/cm2 in the [1̅10]P direction. This work will be very helpful for the development of antiferroelectric theories and the design of novel energy storage materials.
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Affiliation(s)
- Botao Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, and Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhengyang Zhou
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Shiqing Deng
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Junliang Sun
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Jun Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, and Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China.,School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
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20
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Fu Z, Chen X, Li Z, Hu T, Zhang L, Lu P, Zhang S, Wang G, Dong X, Xu F. Unveiling the ferrielectric nature of PbZrO 3-based antiferroelectric materials. Nat Commun 2020; 11:3809. [PMID: 32732868 PMCID: PMC7392892 DOI: 10.1038/s41467-020-17664-w] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Accepted: 07/12/2020] [Indexed: 11/09/2022] Open
Abstract
Benefitting from the reversible phase transition between antiferroelectric and ferroelectric states, antiferroelectric materials have recently received widespread attentions for energy storage applications. Antiferroelectric configuration with specific antiparallel dipoles has been used to establish antiferroelectric theories and understand its characteristic behaviors. Here, we report that the so-called antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 system is actually ferrielectric in nature. We demonstrate different ferrielectric configurations, which consists of ferroelectric ordering segments with either magnitude or angle modulation of dipoles. The ferrielectric configurations are mainly contributed from the coupling between A-cations and O-anions, and their displacement behavior is dependent largely on the chemical doping. Of particular significance is that the width and net polarization of ferroelectric ordering segments can be tailored by composition, which is linearly related to the key electrical characteristics, including switching field, remanent polarization and dielectric constant. These findings provide opportunities for comprehending structure-property correlation, developing antiferroelectric/ferrielectric theories and designing novel ferroic materials. The large family PbZrO3-based solid solutions are usually considered as antiferroelectric materials with specific antiparallel polarization configuration. Here, the authors demonstrate the PbZrO3-based material has ferrielectric dipoles ordering and configure a clear structure-property relationship.
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Affiliation(s)
- Zhengqian Fu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Xuefeng Chen
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Zhenqin Li
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China.,University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Tengfei Hu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China.,School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China
| | - Linlin Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Ping Lu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, NSW, 2500, Australia
| | - Genshui Wang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China. .,The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China.
| | - Xianlin Dong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China. .,The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China. .,School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China.
| | - Fangfang Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China. .,School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China.
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