1
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Gai Y, Lin F, Tan S, Yao Y. Exploration of the thickness-depended dynamic properties of differential phase contrast (DPC) and integrated differential phase contrast (iDPC). Micron 2024; 186:103705. [PMID: 39186889 DOI: 10.1016/j.micron.2024.103705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2024] [Revised: 08/13/2024] [Accepted: 08/16/2024] [Indexed: 08/28/2024]
Abstract
A study on DPC and iDPC images of crystals is achieved with simulation. It highlights the use of electron wave intensity distribution to visualize the dynamic effect on DPC and iDPC contrasts. Electron waves near heavy atoms exhibit significant oscillations and rapid intensity decay. This oscillation causes DPC and iDPC signal inversion. Bloch wave theory is used to derive DPC and iDPC intensity distributions, elucidating the impact of dynamic effect on the contrast.
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Affiliation(s)
- Yuming Gai
- College of Electronic Engineering, South China Agricultural University, Guangzhou 510642, China; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Fang Lin
- College of Electronic Engineering, South China Agricultural University, Guangzhou 510642, China
| | - Suiyan Tan
- College of Electronic Engineering, South China Agricultural University, Guangzhou 510642, China.
| | - Yuan Yao
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
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2
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Zhang F, Zhang Y, Li L, Mou X, Peng H, Shen S, Wang M, Xiao K, Ji SH, Yi D, Nan T, Tang J, Yu P. Nanoscale multistate resistive switching in WO 3 through scanning probe induced proton evolution. Nat Commun 2023; 14:3950. [PMID: 37402709 DOI: 10.1038/s41467-023-39687-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 06/22/2023] [Indexed: 07/06/2023] Open
Abstract
Multistate resistive switching device emerges as a promising electronic unit for energy-efficient neuromorphic computing. Electric-field induced topotactic phase transition with ionic evolution represents an important pathway for this purpose, which, however, faces significant challenges in device scaling. This work demonstrates a convenient scanning-probe-induced proton evolution within WO3, driving a reversible insulator-to-metal transition (IMT) at nanoscale. Specifically, the Pt-coated scanning probe serves as an efficient hydrogen catalysis probe, leading to a hydrogen spillover across the nano junction between the probe and sample surface. A positively biased voltage drives protons into the sample, while a negative voltage extracts protons out, giving rise to a reversible manipulation on hydrogenation-induced electron doping, accompanied by a dramatic resistive switching. The precise control of the scanning probe offers the opportunity to manipulate the local conductivity at nanoscale, which is further visualized through a printed portrait encoded by local conductivity. Notably, multistate resistive switching is successfully demonstrated via successive set and reset processes. Our work highlights the probe-induced hydrogen evolution as a new direction to engineer memristor at nanoscale.
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Affiliation(s)
- Fan Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, 100876, Beijing, China
| | - Yang Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Linglong Li
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Xing Mou
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
| | - Huining Peng
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Meng Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Kunhong Xiao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Shuai-Hua Ji
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
- Frontier Science Center for Quantum Information, 100084, Beijing, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
- Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, 100084, Beijing, China
| | - Jianshi Tang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
- Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, 100084, Beijing, China
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China.
- Frontier Science Center for Quantum Information, 100084, Beijing, China.
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3
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Wu Y, Jiang P, Yang T. Rational design, crystal structure, and frustrated magnetism of the Ge-containing YbFe 2O 4-type layered oxides In 2Zn 3-xCo xGeO 8 (0 ≤ x ≤ 3). Dalton Trans 2023. [PMID: 37365940 DOI: 10.1039/d3dt01293j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/28/2023]
Abstract
YbFe2O4-type layered oxides have attracted tremendous interest because the unique crystal comprises two distinct geometrically frustrated triangular cation-sublattices. Herein, a series of YbFe2O4-type materials In2Zn3-xCoxGeO8 (0 ≤ x ≤ 3) were rationally designed and experimentally synthesized for the first time. The crystal structures of In2Zn3-xCoxGeO8 were investigated comprehensively by Rietveld refinements against high-resolution monochromatic Cu Kα1 XRD data. Zn2+, Co2+, and Ge4+ cations are distributed randomly on the [MO]2 bilayer and possess a trigonal bipyramid (TBP) coordination geometry. Because Co2+ has an unpaired electron in the dz2 orbital and a larger electronegativity than Zn2+, Co2+-to-Zn2+ equivalent substitution in In2Zn3-xCoxGeO8 results in more compact MO5-TBPs, which is the origin of anisotropic lattice expansion and contraction along the a and c axes, respectively. The Co2+ moments in the [MO]2 bilayer are strongly AFM coupled and geometrically frustrated, therefore resulting in a spin-glass magnetic transition at around Tg = 20 K for In2ZnCo2GeO8, while a long-range AFM ordering is established for In2Co3GeO8 with a Néel temperature of 53 K, attributed to the significantly enhanced AFM interactions and increased In3+/Co2+ anti-site disordering, as compared to those in In2ZnCo2GeO8.
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Affiliation(s)
- Yuhan Wu
- College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China.
| | - Pengfei Jiang
- College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China.
| | - Tao Yang
- College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China.
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4
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Liang Z, Song D, Ge B. Optimizing experimental parameters of integrated differential phase contrast (iDPC) for atomic resolution imaging. Ultramicroscopy 2023; 246:113686. [PMID: 36682324 DOI: 10.1016/j.ultramic.2023.113686] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2022] [Revised: 11/30/2022] [Accepted: 01/16/2023] [Indexed: 01/19/2023]
Abstract
Integrated differential phase contrast scanning transmission electron microscopy (iDPC-STEM) technique has been well developed for studying atomic structures at sub-Å resolution with the capability of simultaneously imaging heavy and light atoms even at an extremely low electron dose. As a direct phase contrast imaging technique, atomic resolution iDPC-STEM is sensitive to the imaging conditions. Although great achievements have been made both in aspect of theory and experiments, the influence of experimental parameters on the contrast of atomic resolution iDPC-STEM images has not been systematically investigated. Here, we perform the iDPC-STEM simulations on the prototypical example of SrTiO3 with respect to the routine experimental factors, including the defocus, specimen thickness, accelerating voltage, convergence angle, collection angle, sample tilt and electron dose. Through the evaluation of image contrast and atom column intensity, the parameters are discussed to improve the image contrast and the visibility of light elements. Moreover, the dose-dependent simulations demonstrate the advantage of low dose iDPC-STEM imaging over other conventional STEM modes. Our results provide a practical guideline to experimentally obtain accessible atomic resolution iDPC-STEM images.
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Affiliation(s)
- Zhiyao Liang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Dongsheng Song
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
| | - Binghui Ge
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
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5
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Jiao M, Lei Z, Wu Y, Du J, Zhou XY, Li W, Yuan X, Liu X, Zhu X, Wang S, Zhu H, Cao P, Liu X, Zhang X, Wang H, Jiang S, Lu Z. Manipulating the ordered oxygen complexes to achieve high strength and ductility in medium-entropy alloys. Nat Commun 2023; 14:806. [PMID: 36781880 PMCID: PMC9925791 DOI: 10.1038/s41467-023-36319-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Accepted: 01/26/2023] [Indexed: 02/15/2023] Open
Abstract
Oxygen solute strengthening is an effective strategy to harden alloys, yet, it often deteriorates the ductility. Ordered oxygen complexes (OOCs), a state between random interstitials and oxides, can simultaneously enhance strength and ductility in high-entropy alloys. However, whether this particular strengthening mechanism holds in other alloys and how these OOCs are tailored remain unclear. Herein, we demonstrate that OOCs can be obtained in bcc (body-centered-cubic) Ti-Zr-Nb medium-entropy alloys via adjusting the content of Nb and oxygen. Decreasing the phase stability enhances the degree of (Ti, Zr)-rich chemical short-range orderings, and then favors formation of OOCs after doping oxygen. Moreover, the number density of OOCs increases with oxygen contents in a given alloy, but adding excessive oxygen (>3.0 at.%) causes grain boundary segregation. Consequently, the tensile yield strength is enhanced by ~75% and ductility is substantially improved by ~164% with addition of 3.0 at.% O in the Ti-30Zr-14Nb MEA.
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Affiliation(s)
- Meiyuan Jiao
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Zhifeng Lei
- College of Materials Science and Engineering, Hunan University, 410082, Changsha, China.
| | - Yuan Wu
- Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083, Beijing, China.
| | - Jinlong Du
- grid.11135.370000 0001 2256 9319Electron Microscopy Laboratory, School of Physics, Peking University, 100871 Beijing, China
| | - Xiao-Ye Zhou
- grid.263488.30000 0001 0472 9649Guangdong Province Key Laboratory of Durability for Marine Civil Engineering, School of Civil Engineering, Shenzhen University, 518060 Shenzhen, China
| | - Wenyue Li
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Xiaoyuan Yuan
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Xiaochun Liu
- grid.440669.90000 0001 0703 2206Institute of Metals, College of Materials Science and Engineering, Changsha University of Science & Technology, 410114 Changsha, China
| | - Xiangyu Zhu
- grid.267323.10000 0001 2151 7939Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080 USA
| | - Shudao Wang
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Huihui Zhu
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Peipei Cao
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Xiongjun Liu
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Xiaobin Zhang
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Hui Wang
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Suihe Jiang
- grid.69775.3a0000 0004 0369 0705Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, China
| | - Zhaoping Lu
- Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083, Beijing, China.
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Sha H, Cui J, Yu R. Deep sub-angstrom resolution imaging by electron ptychography with misorientation correction. SCIENCE ADVANCES 2022; 8:eabn2275. [PMID: 35559675 PMCID: PMC9106290 DOI: 10.1126/sciadv.abn2275] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Accepted: 03/30/2022] [Indexed: 05/31/2023]
Abstract
Superresolution imaging of solids is essential to explore local symmetry breaking and derived material properties. Electron ptychography is one of the most promising schemes to realize superresolution imaging beyond aberration correction. However, to reach both deep sub-angstrom resolution imaging and accurate measurement of atomic structures, it is still required for the electron beam to be nearly parallel to the zone axis of crystals. Here, we report an efficient and robust method to correct the specimen misorientation in electron ptychography, giving deep sub-angstrom resolution for specimens with large misorientations. The method largely reduces the experimental difficulties of electron ptychography and paves the way for widespread applications of ptychographic deep sub-angstrom resolution imaging.
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Affiliation(s)
- Haozhi Sha
- National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084, China
- Key Laboratory of Advanced Materials of Ministry of Education of China, Tsinghua University, Beijing 100084, China
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jizhe Cui
- National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084, China
- Key Laboratory of Advanced Materials of Ministry of Education of China, Tsinghua University, Beijing 100084, China
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084, China
- Key Laboratory of Advanced Materials of Ministry of Education of China, Tsinghua University, Beijing 100084, China
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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7
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Zhang Y, Yu R, Zhu J. Displacement separation analysis from atomic-resolution images. Ultramicroscopy 2021; 232:113404. [PMID: 34656896 DOI: 10.1016/j.ultramic.2021.113404] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 09/26/2021] [Accepted: 10/03/2021] [Indexed: 11/16/2022]
Abstract
Structural distortions frequently occur in materials, either periodically (ferroelectric or antiferroelectric) or in local areas (domain boundaries, surfaces/interfaces, dislocations). Measuring atomic displacements from an average lattice is of crucial importance for analyzing structural distortions and their connections to physical properties. Conventionally, the displacements are measured atom-by-atom by fitting atomic-resolution images with two-dimensional gaussian functions. Here, we exhibit an efficient method, named Displacement Separation Analysis, DSA in short, to directly separate atomic displacements from an average lattice based on Fourier space filtering. Using antiferroelectric AgNbO3 as a model system, we demonstrate the consistence between DSA and gaussian fitting. The suppression of polarization at interfacial region of h-LuFeO3/α-Al2O3 heterostructure and the emergence of modulation structure in LuFe2O4+x is then revealed using DSA, attesting the implication of DSA in unveiling structural distortions either locally or periodically. Inspired by the simple principle of DSA, such method can be used for any atomic-resolution images, including TEM, STM, and AFM images to exhibit the atomic displacement intuitively.
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Affiliation(s)
- Yang Zhang
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China; Ji Hua Laboratory, Foshan, 528299, P.R. China; State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P.R. China
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
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8
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Atomic-scale insights into quantum-order parameters in bismuth-doped iron garnet. Proc Natl Acad Sci U S A 2021; 118:2101106118. [PMID: 33975955 DOI: 10.1073/pnas.2101106118] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Bismuth and rare earth elements have been identified as effective substituent elements in the iron garnet structure, allowing an enhancement in magneto-optical response by several orders of magnitude in the visible and near-infrared region. Various mechanisms have been proposed to account for such enhancement, but testing of these ideas is hampered by a lack of suitable experimental data, where information is required not only regarding the lattice sites where substituent atoms are located but also how these atoms affect various order parameters. Here, we show for a Bi-substituted lutetium iron garnet how a suite of advanced electron microscopy techniques, combined with theoretical calculations, can be used to determine the interactions between a range of quantum-order parameters, including lattice, charge, spin, orbital, and crystal field splitting energy. In particular, we determine how the Bi distribution results in lattice distortions that are coupled with changes in electronic structure at certain lattice sites. These results reveal that these lattice distortions result in a decrease in the crystal-field splitting energies at Fe sites and in a lifted orbital degeneracy at octahedral sites, while the antiferromagnetic spin order remains preserved, thereby contributing to enhanced magneto-optical response in bismuth-substituted iron garnet. The combination of subangstrom imaging techniques and atomic-scale spectroscopy opens up possibilities for revealing insights into hidden coupling effects between multiple quantum-order parameters, thereby further guiding research and development for a wide range of complex functional materials.
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