Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport

Emerging Spintronic Materials and Functionalities

The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.

Time-integral iteration method for two-dimensional anomalous transport

A methodology is developed to describe time-dependent phenomena associated with nonlocal transport in complex, two-dimensional geometries. It is an extension of the ''iterative method" introduced previously to solve steady-state transport problems [Maggs and Morales, Phys. Rev. E 99, 013307 (2019)10.1103/PhysRevE.99.013307], and it is based on the ''jumping particle" concepts associated with the continuous-time random walk (CTRW) model. The method presented explicitly evaluates the time integral contained in the CTRW master equation. A modified version of the Mittag-Leffler function is used for the waiting-time probability distributions to incorporate memory effects. Calculations of the propagation of ''anomalous transport waves" in various systems, with and without memory, illustrate the technique.

CVD Bilayer Graphene Spin Valves with 26 μm Spin Diffusion Length at Room Temperature

We present inverted spin-valve devices fabricated from chemical vapor deposition (CVD)-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the-art bilayer graphene spin valves. This is made possible by a polydimethylsiloxane droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate dependent Hanle measurements reveal spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 μm at room temperature combined with a charge carrier mobility of about 24 000 cm²(V s)^-1 for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-grown single-layer graphene and even exfoliated single-layer graphene.

Tunable Spin Injection in High-Quality Graphene with One-Dimensional Contacts

Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tunable spin signal in fully encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130 000 cm2 V-1 s-1 and spin diffusion lengths approaching 20 μm. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.

Mathematical Models with Nonlocal Initial Conditions: An Exemplification from Quantum Mechanics

Nonlocal models are ubiquitous in all branches of science and engineering, with a rapidly expanding range of mathematical and computational applications due to the ability of such models to capture effects and phenomena that traditional models cannot. While spatial nonlocalities have received considerable attention in the research community, the same cannot be said about nonlocality in time, in particular when nonlocal initial conditions are present. This paper aims at filling this gap, providing an overview of the current status of nonlocal models and focusing on the mathematical treatment of such models when nonlocal initial conditions are at the heart of the problem. Specifically, our representative example is given for a nonlocal-in-time problem for the abstract Schrödinger equation. By exploiting the linear nature of nonlocal conditions, we derive an exact representation of the solution operator under assumptions that the spectrum of Hamiltonian is contained in the horizontal strip of the complex plane. The derived representation permits us to establish the necessary and sufficient conditions for the problem’s well-posedness and the existence of its solution under different regularities. Furthermore, we present new sufficient conditions for the existence of the solution that extend the existing results in this field to the case when some nonlocal parameters are unbounded. Two further examples demonstrate the developed methodology and highlight the importance of its computer algebra component in the reduction procedures and parameter estimations for nonlocal models. Finally, a connection of the considered models and developed analysis is discussed in the context of other reduction techniques, concentrating on the most promising from the viewpoint of data-driven modelling environments, and providing directions for further generalizations.

Van der Waals heterostructures for spintronics and opto-spintronics

The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here we provide an overview of recent progress in 2D spintronics and opto-spintronics using van der Waals heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multifunctional hybrid heterostructures based on van der Waals materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultracompact all-2D spin devices and their potential applications in conventional and quantum technologies.

Canted Persistent Spin Texture and Quantum Spin Hall Effect in WTe_{2}

We report an unconventional quantum spin Hall phase in the monolayer WTe_{2}, which exhibits hitherto unknown features in other topological materials. The low symmetry of the structure induces a canted spin texture in the yz plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized (2e^{2}/h) with a spin quantization axis parallel to the canting direction. These findings are based on large-scale quantum simulations of the spin Hall conductivity tensor and nonlocal resistances in multiprobe geometries using a realistic tight-binding model elaborated from first-principle methods. The observation of this canted quantum spin Hall effect, related to the formation of topological edge states with nontrivial spin polarization, demands for specific experimental design and suggests interesting alternatives for manipulating spin information in topological materials.

Ultimate Spin Currents in Commercial Chemical Vapor Deposited Graphene

Establishing ultimate spin current efficiency in graphene over industry-standard substrates can facilitate research and development exploration of spin current functions and spin sensing. At the same time, it can resolve core issues in spin relaxation physics while addressing the skepticism of graphene's practicality for planar spintronic applications. In this work, we reveal an exceptionally long spin communication capability of 45 μm and highest to date spin diffusion length of 13.6 μm in graphene on SiO2/Si at room temperature. Employing commercial chemical vapor deposited (CVD) graphene, we show how contact-induced surface charge transfer doping and device doping contributions, as well as spin relaxation, can be quenched in extremely long spin channels and thereby enable unexpectedly long spin diffusion lengths in polycrystalline CVD graphene. Extensive experiments show enhanced spin transport and precession in multiple longest channels (36 and 45 μm) that reveal the highest spin lifetime of ∼2.5-3.5 ns in graphene over SiO2/Si, even under ambient conditions. Such performance, made possible due to our devices approaching the intrinsic spin-orbit coupling of ∼20 μeV in graphene, reveals the role of the D'yakonov-Perel' spin relaxation mechanism in graphene channels as well as contact regions. Our record demonstration, fresh device engineering, and spin relaxation insights unlock the ultimate spin current capabilities of graphene on SiO2/Si, while the robust high performance of commercial CVD graphene can proliferate research and development of innovative spin sensors and spin computing circuits.