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Dogan KC, Cetin Z, Yagmurcukardes M. Anisotropic structural, vibrational, electronic, optical, and elastic properties of single-layer hafnium pentatelluride: an ab initio study. NANOSCALE 2024; 16:11262-11273. [PMID: 38787650 DOI: 10.1039/d4nr00478g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2024]
Abstract
Motivated by the highly anisotropic nature of bulk hafnium pentatelluride (HfTe5), the structural, vibrational, electronic, optical, and elastic properties of single-layer two-dimensional (2D) HfTe5 were investigated by performing density functional theory (DFT)-based first-principles calculations. Total energy and geometry optimizations reveal that the 2D single-layer form of HfTe5 exhibits in-plane anisotropy. The phonon band structure shows dynamic stability of the free-standing layer and the predicted Raman spectrum displays seven characteristic Raman-active phonon peaks. In addition to its dynamic stability, HfTe5 is shown to exhibit thermal stability at room temperature, as confirmed by quantum molecular dynamics simulations. Moreover, the obtained elastic stiffness tensor elements indicate the mechanical stability of HfTe5 with its orientation-dependent soft nature. The electronic band structure calculations show the indirect-gap semiconducting behavior of HfTe5 with a narrow electronic band gap energy. The optical properties of HfTe5, in terms of its imaginary dielectric function, absorption coefficient, reflectance, and transmittance, are shown to exhibit strong in-plane anisotropy. Furthermore, structural analysis of several point defects and their oxidized structures was performed by means of simulated STM images. Among the considered vacancy defects, namely , , VTeout, VTein, , and VHf, the formation of VTeout is revealed to be the most favorable defect. While and VHf defects lead to local magnetism, only the oxygen-substituted VHf structure possesses magnetism among the oxidized defects. Moreover, it is found that all the bare and oxidized vacant sites can be distinguished from each other through the STM images. Overall, our study indicates not only the fundamental anisotropic features of single-layer HfTe5, but also shows the signatures of feasible point defects and their oxidized structures, which may be useful for future experiments on 2D HfTe5.
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Affiliation(s)
- Kadir Can Dogan
- Department of Physics, Izmir Institute of Technology, 35430, Izmir, Turkey
| | - Zebih Cetin
- Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey.
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Liu J, Zhou Y, Yepez Rodriguez S, Delmont MA, Welser RA, Ho T, Sirica N, McClure K, Vilmercati P, Ziller JW, Mannella N, Sanchez-Yamagishi JD, Pettes MT, Wu R, Jauregui LA. Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe 5. Nat Commun 2024; 15:332. [PMID: 38184667 PMCID: PMC10771548 DOI: 10.1038/s41467-023-44547-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 12/19/2023] [Indexed: 01/08/2024] Open
Abstract
The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe5 as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures.
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Affiliation(s)
- Jinyu Liu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Yinong Zhou
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | | | - Matthew A Delmont
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, CA, 92697, USA
| | - Robert A Welser
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Triet Ho
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, CA, 92697, USA
| | - Nicholas Sirica
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Kaleb McClure
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Paolo Vilmercati
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Joseph W Ziller
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
| | - Norman Mannella
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | | | - Michael T Pettes
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Luis A Jauregui
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA.
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Wang Y, Bömerich T, Park J, Legg HF, Taskin AA, Rosch A, Ando Y. Nonlinear Transport due to Magnetic-Field-Induced Flat Bands in the Nodal-Line Semimetal ZrTe_{5}. PHYSICAL REVIEW LETTERS 2023; 131:146602. [PMID: 37862668 DOI: 10.1103/physrevlett.131.146602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2023] [Revised: 07/11/2023] [Accepted: 09/06/2023] [Indexed: 10/22/2023]
Abstract
The Dirac material ZrTe_{5} at very low carrier density was recently found to be a nodal-line semimetal, where ultraflat bands are expected to emerge in magnetic fields parallel to the nodal-line plane. Here, we report that in very low carrier-density samples of ZrTe_{5}, when the current and the magnetic field are both along the crystallographic a axis, the current-voltage characteristics presents a pronounced nonlinearity which tends to saturate in the ultra quantum limit. The magnetic-field dependence of the nonlinear coefficient is well explained by the Boltzmann theory for flat-band transport, and we argue that this nonlinear transport is likely due to the combined effect of flat bands and charge puddles; the latter appear due to very low carrier densities.
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Affiliation(s)
- Yongjian Wang
- Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Thomas Bömerich
- Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Jinhong Park
- Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Henry F Legg
- Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - A A Taskin
- Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Achim Rosch
- Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Yoichi Ando
- Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
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Liu Y, Pi H, Watanabe K, Taniguchi T, Gu G, Li Q, Weng H, Wu Q, Li Y, Xu Y. Gate-Tunable Multiband Transport in ZrTe 5 Thin Devices. NANO LETTERS 2023. [PMID: 37205726 DOI: 10.1021/acs.nanolett.3c01528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial: for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron-hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Our work helps to resolve the longstanding puzzles on ZrTe5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.
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Affiliation(s)
- Yonghe Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Hanqi Pi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States
| | - Qiang Li
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794-3800, United States
| | - Hongming Weng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Quansheng Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yongqing Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Gooth J, Galeski S, Meng T. Quantum-Hall physics and three dimensions. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:044501. [PMID: 36735956 DOI: 10.1088/1361-6633/acb8c9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2022] [Accepted: 02/03/2023] [Indexed: 06/18/2023]
Abstract
The discovery of the quantum Hall effect (QHE) in 1980 marked a turning point in condensed matter physics: given appropriate experimental conditions, the Hall conductivityσxyof a two-dimensional electron system is exactly quantized. But what happens to the QHE in three dimensions (3D)? Experiments over the past 40 years showed that some of the remarkable physics of the QHE, in particular plateau-like Hall conductivitiesσxyaccompanied by minima in the longitudinal resistivityρxx, can also be found in 3D materials. However, since typicallyρxxremains finite and a quantitative relation betweenσxyand the conductance quantume2/hcould not be established, the role of quantum Hall physics in 3D remains unsettled. Following a recent series of exciting experiments, the QHE in 3D has now returned to the center stage. Here, we summarize the leap in understanding of 3D matter in magnetic fields emerging from these experiments.
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Affiliation(s)
- Johannes Gooth
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187 Dresden, Germany
- Physikalisches Institut, Rheinische Friedrich-Wilhelms-Universität, Nußalle 12, 53115 Bonn, Germany
| | - Stanislaw Galeski
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187 Dresden, Germany
- Physikalisches Institut, Rheinische Friedrich-Wilhelms-Universität, Nußalle 12, 53115 Bonn, Germany
| | - Tobias Meng
- Institute of Theoretical Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, Dresden 01062, Germany
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Wu W, Shi Z, Du Y, Wang Y, Qin F, Meng X, Liu B, Ma Y, Yan Z, Ozerov M, Zhang C, Lu HZ, Chu J, Yuan X. Topological Lifshitz transition and one-dimensional Weyl mode in HfTe 5. NATURE MATERIALS 2023; 22:84-91. [PMID: 36175521 DOI: 10.1038/s41563-022-01364-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2022] [Accepted: 08/15/2022] [Indexed: 06/16/2023]
Abstract
Landau band crossings typically stem from the intra-band evolution of electronic states in magnetic fields and enhance the interaction effect in their vicinity. Here in the extreme quantum limit of topological insulator HfTe5, we report the observation of a topological Lifshitz transition from inter-band Landau level crossings using magneto-infrared spectroscopy. By tracking the Landau level transitions, we demonstrate that band inversion drives the zeroth Landau bands to cross with each other after 4.5 T and forms a one-dimensional Weyl mode with the fundamental gap persistently closed. The unusual reduction of the zeroth Landau level transition activity suggests a topological Lifshitz transition at 21 T, which shifts the Weyl mode close to the Fermi level. As a result, a broad and asymmetric absorption feature emerges due to the Pauli blocking effect in one dimension, along with a distinctive negative magneto-resistivity. Our results provide a strategy for realizing one-dimensional Weyl quasiparticles in bulk crystals.
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Affiliation(s)
- Wenbin Wu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Zeping Shi
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Yuhan Du
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Yuxiang Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China
| | - Fang Qin
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
| | - Xianghao Meng
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Binglin Liu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Yuanji Ma
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Zhongbo Yan
- School of Physics, Sun Yat-Sen University, Guangzhou, China
| | - Mykhaylo Ozerov
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, USA
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, China
- Institute of Optoelectronics, Fudan University, Shanghai, China
| | - Xiang Yuan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China.
- School of Physics and Electronic Science, East China Normal University, Shanghai, China.
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7
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Wang Y, Legg HF, Bömerich T, Park J, Biesenkamp S, Taskin AA, Braden M, Rosch A, Ando Y. Gigantic Magnetochiral Anisotropy in the Topological Semimetal ZrTe_{5}. PHYSICAL REVIEW LETTERS 2022; 128:176602. [PMID: 35570449 DOI: 10.1103/physrevlett.128.176602] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Revised: 02/22/2022] [Accepted: 03/31/2022] [Indexed: 06/15/2023]
Abstract
Topological materials with broken inversion symmetry can give rise to nonreciprocal responses, such as the current rectification controlled by magnetic fields via magnetochiral anisotropy. Bulk nonreciprocal responses usually stem from relativistic corrections and are always very small. Here we report our discovery that ZrTe_{5} crystals in proximity to a topological quantum phase transition present gigantic magnetochiral anisotropy, which is the largest ever observed to date. We argue that a very low carrier density, inhomogeneities, and a torus-shaped Fermi surface induced by breaking of inversion symmetry in a Dirac material are central to explain this extraordinary property.
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Affiliation(s)
- Yongjian Wang
- Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Henry F Legg
- Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Thomas Bömerich
- Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Jinhong Park
- Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Sebastian Biesenkamp
- Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - A A Taskin
- Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Markus Braden
- Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Achim Rosch
- Institute for Theoretical Physics, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
| | - Yoichi Ando
- Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany
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8
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Galeski S, Ehmcke T, Wawrzyńczak R, Lozano PM, Cho K, Sharma A, Das S, Küster F, Sessi P, Brando M, Küchler R, Markou A, König M, Swekis P, Felser C, Sassa Y, Li Q, Gu G, Zimmermann MV, Ivashko O, Gorbunov DI, Zherlitsyn S, Förster T, Parkin SSP, Wosnitza J, Meng T, Gooth J. Origin of the quasi-quantized Hall effect in ZrTe 5. Nat Commun 2021; 12:3197. [PMID: 34045452 PMCID: PMC8159947 DOI: 10.1038/s41467-021-23435-y] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2021] [Accepted: 04/27/2021] [Indexed: 02/04/2023] Open
Abstract
The quantum Hall effect (QHE) is traditionally considered to be a purely two-dimensional (2D) phenomenon. Recently, however, a three-dimensional (3D) version of the QHE was reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, spectroscopic, thermoelectric and charge transport measurements on such ZrTe5 samples. The measured properties: magnetization, ultrasound propagation, scanning tunneling spectroscopy, and Raman spectroscopy, show no signatures of a Fermi surface instability, consistent with in-field single crystal X-ray diffraction. Instead, a direct comparison of the experimental data with linear response calculations based on an effective 3D Dirac Hamiltonian suggests that the quasi-quantization of the observed Hall response emerges from the interplay of the intrinsic properties of the ZrTe5 electronic structure and its Dirac-type semi-metallic character.
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Affiliation(s)
- S Galeski
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
| | - T Ehmcke
- Institute for Theoretical Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, Dresden, Germany
| | - R Wawrzyńczak
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - P M Lozano
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA
| | - K Cho
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - A Sharma
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - S Das
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - F Küster
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - P Sessi
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - M Brando
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - R Küchler
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - A Markou
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - M König
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - P Swekis
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - C Felser
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Y Sassa
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Q Li
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA
| | - G Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA
| | | | - O Ivashko
- Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
| | - D I Gorbunov
- Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ct.qmat,, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - S Zherlitsyn
- Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ct.qmat,, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - T Förster
- Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ct.qmat,, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - S S P Parkin
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - J Wosnitza
- Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ct.qmat,, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
- Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden, Germany
| | - T Meng
- Institute for Theoretical Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, Dresden, Germany
| | - J Gooth
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
- Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden, Germany.
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