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Ratajczak R, Sarwar M, Kalita D, Jozwik P, Mieszczynski C, Matulewicz J, Wilczopolska M, Wozniak W, Kentsch U, Heller R, Guziewicz E. Anisotropy of radiation-induced defects in Yb-implanted β-Ga 2O 3. Sci Rep 2024; 14:24800. [PMID: 39433830 PMCID: PMC11494172 DOI: 10.1038/s41598-024-75187-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2024] [Accepted: 10/03/2024] [Indexed: 10/23/2024] Open
Abstract
RE-doped β-Ga2O3 seems attractive for future high-power LEDs operating in high irradiation environments. In this work, we pay special attention to the issue of radiation-induced defect anisotropy in β-Ga2O3, which is crucial for device manufacturing. Using the RBS/c technique, we have carefully studied the structural changes caused by implantation and post-implantation annealing in two of the most commonly used crystallographic orientations of β-Ga2O3, namely the (-201) and (010). The analysis was supported by advanced computer simulations using the McChasy code. Our studies reveal a strong dependence of the structural damage induced by Yb-ion implantation on the crystal orientation, with a significantly higher level of extended defects observed in the (-201) direction than for the (010). In contrast, the concentration and behavior of simple defects seem similar for both oriented crystals, although their evolution suggests the co-existence of two different types of defects in the implanted zone with their different sensitivity to both, radiation and annealing. It has also been found that Yb ions mostly occupy the interstitial positions in β-Ga2O3 crystals that remain unchanged after annealing. The location is independent of the crystal orientations. We believe that these studies noticeably extend the knowledge of the radiation-induced defect structure, because they dispel doubts about the differences in the damage level depending on crystal orientation, and are important for further practical applications.
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Affiliation(s)
- Renata Ratajczak
- National Centre for Nuclear Research, ul. Soltana 7, Otwock, 05-400, Poland.
| | - Mahwish Sarwar
- Inst. of Physics, Polish Acad. of Sciences, Aleja Lotnikow 32/46, Warsaw, PL-02668, Poland
| | - Damian Kalita
- National Centre for Nuclear Research, ul. Soltana 7, Otwock, 05-400, Poland
| | - Przemysław Jozwik
- National Centre for Nuclear Research, ul. Soltana 7, Otwock, 05-400, Poland
| | | | - Joanna Matulewicz
- National Centre for Nuclear Research, ul. Soltana 7, Otwock, 05-400, Poland
| | | | - Wojciech Wozniak
- Inst. of Physics, Polish Acad. of Sciences, Aleja Lotnikow 32/46, Warsaw, PL-02668, Poland
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden, D-01328, Germany
| | - René Heller
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden, D-01328, Germany
| | - Elzbieta Guziewicz
- Inst. of Physics, Polish Acad. of Sciences, Aleja Lotnikow 32/46, Warsaw, PL-02668, Poland
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Gao Y, Xu L, Feng ZH, Qian Y, Tian ZF, Ren XM. Polymorph transformation in a mixed-stacking nickel-dithiolene complex with the derivative of 4,4'-bipyridinium. Dalton Trans 2024; 53:8202-8213. [PMID: 38687296 DOI: 10.1039/d4dt00324a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
In this study, two polymorphs of the [1,1'-dibutyl-4,4'-bipyridinium][Ni(mnt)2] salt (1) were synthesized. The dark-green polymorph (designated as 1-g) was prepared under ambient conditions by the rapid precipitation method in aqueous solutions. Subsequently, the red polymorph (labeled as 1-r) was obtained by subjecting 1-g to ultrasonication in MeOH at room temperature. Microanalysis, infrared spectroscopy, thermogravimetry (TG), differential scanning calorimetry (DSC), and powder X-ray diffraction (PXRD) techniques were used to characterize the two polymorphs. Both 1-g and 1-r exhibit structural phase transitions: a reversible phase transition at ∼403 K (∼268 K) upon heating and 384 K (∼252 K) upon cooling for 1-g (1-r) within the temperature range below 473 K. Interestingly, on heating 1-r to 523 K, an irreversible phase transition occurred at about 494 K, resulting in the conversion of 1-r into 1-g. Relative to 1-r, 1-g represents a thermodynamically metastable phase wherein numerous high-energy conformations in butyl chains of cations are confined within the lattice owing to quick precipitation or rapid annealing from higher temperatures. Through variable-temperature single crystal and powder X-ray diffractions, UV-visible spectroscopy, dielectric spectroscopy, and DSC analyses, this study delves into the mechanism underlying phase transitions for each polymorph and the manual transformation between 1-g and 1-r as well.
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Affiliation(s)
- Yan Gao
- State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, P. R. China.
| | - Lei Xu
- State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, P. R. China.
| | - Zi-Heng Feng
- State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, P. R. China.
| | - Yin Qian
- State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, P. R. China.
| | - Zheng-Fang Tian
- Hubei Key Laboratory of Processing and Application of Catalytic Materials, Huanggang Normal University, Huanggang, 438000, P. R. China
| | - Xiao-Ming Ren
- State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing 211816, P. R. China.
- State Key Laboratory of Coordination Chemistry, Nanjing University, Nanjing 210093, P. R. China
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Devamanoharan A, Venkatachalapathy V, Veerapandy V, Vajeeston P. Investigating Stable Low-Energy Gallium Oxide (Ga 2O 3) Polytypes: Insights into Electronic and Optical Properties from First Principles. ACS OMEGA 2024; 9:16207-16220. [PMID: 38617702 PMCID: PMC11007711 DOI: 10.1021/acsomega.3c10192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Revised: 02/10/2024] [Accepted: 03/05/2024] [Indexed: 04/16/2024]
Abstract
This study provides a comprehensive analysis of the electronic and optical properties of low-energy gallium oxide (Ga2O3) polytypes not considered earlier. Among these polytypes, the monoclinic structure (β-Ga2O3) holds significant relevance for both research and practical applications due to its superior stability under typical conditions. The primary aim of this research is to identify new and stable Ga2O3 polytypes that may exist under zero-temperature and zero-pressure conditions. To achieve this objective, we employ the VASP code to investigate electrical and optical properties, as well as stability assessments. Additionally, we examine phonon and thermal properties, including heat capacity, for all polytypes. This study also encompasses the computation of full elastic tensors and elastic moduli for all polytypes at 0 K, with Poisson's and Pugh's ratios confirming their ductile nature. Furthermore, we present the first ever report on the Raman- and infrared (IR)-active modes of these stable Ga2O3 polytypes. Our findings reveal that these mechanically and dynamically stable Ga2O3 polytypes exhibit semiconductive properties, as evidenced by electronic band structure investigations. This research offers valuable insights into the optical characteristics of Ga2O3 polytypes with potential applications spanning various fields.
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Affiliation(s)
| | - Vishnukanthan Venkatachalapathy
- Department
of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, Oslo NO-0316, Norway
- Department
of Materials Science, National Research
Nuclear University “MEPhI”, 31 Kashirskoe Sh., Moscow 115409, Russian
Federation
| | - Vasu Veerapandy
- School
of Physics, Madurai Kamaraj University, Madurai 625021, India
| | - Ponniah Vajeeston
- Center
for Materials Science and Nanotechnology, University of Oslo, Oslo 0371, Norway
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4
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Zhang X, Zhang S, Liang X, Yang JY, Liu L. Effects of temperature and charged vacancies on electronic and optical properties of β-Ga 2O 3 after radiation damage. OPTICS EXPRESS 2023; 31:40765-40780. [PMID: 38041369 DOI: 10.1364/oe.504719] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Accepted: 11/07/2023] [Indexed: 12/03/2023]
Abstract
β-Ga2O3 as an ultra-wide bandgap material is widely used in space missions and nuclear reactor environments. It is well established that the physical properties of β-Ga2O3 would be affected by radiation damage and temperature in such application scenarios. Defects are inevitably created in β-Ga2O3 upon irradiation and their dynamic evolution is positively correlated with the thermal motion of atoms as temperature increases. This work utilizes first-principles calculations to investigate how temperature influences the electronic and optical properties of β-Ga2O3 after radiation damage. It finds that the effect of p-type defects caused by Ga vacancies on optical absorption diminishes as temperature increases. The high temperature amplifies the effect of oxygen vacancies to β-Ga2O3, however, making n-type defects more pronounced and accompanied by an increase in the absorption peak in the visible band. The self-compensation effect varies when β-Ga2O3 contains both Ga vacancies and O vacancies at different temperatures. Moreover, in the case of Ga3- (O2+) vacancies, the main characters of p(n)-type defects caused by uncharged Ga0 (O0) vacancies disappear. This work aims to understand the evolution of physical properties of β-Ga2O3 under irradiation especially at high temperatures, and help analyze the damage mechanism in β-Ga2O3-based devices.
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Wang J, Guan X, Zheng H, Zhao L, Jiang R, Zhao P, Zhang Y, Hu J, Li P, Jia S, Wang J. Size-Dependent Phase Transition in Ultrathin Ga 2O 3 Nanowires. NANO LETTERS 2023; 23:7364-7370. [PMID: 37530420 DOI: 10.1021/acs.nanolett.3c01751] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Gallium oxide (Ga2O3) has attracted extensive attention as a potential candidate for low-dimensional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its wide bandgap, controllable doping, and low cost. The structural stability of nanoscale Ga2O3 is the key parameter for designing and constructing a MOSFET, which however remains unexplored. Using in situ transmission electron microscopy, we reveal the size-dependent phase transition of sub-2 nm Ga2O3 nanowires. Based on theoretical calculations, the transformation pathways from the initial monoclinic β-phase to an intermediate cubic γ-phase and then back to the β-phase have been mapped and identified as a sequence of Ga cation migrations. Our results provide fundamental insights into the Ga2O3 phase stability within the nanoscale, which is crucial for advancing the miniaturization, light weight, and integration of wide-bandgap semiconductor devices.
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Affiliation(s)
- Jiaheng Wang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Xiaoxi Guan
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - He Zheng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Wuhan University Shenzhen Research Institute, Shenzhen, Guangdong 518057, China
| | - Ligong Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Renhui Jiang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Peili Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Ying Zhang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Jie Hu
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Pei Li
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Shuangfeng Jia
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Jianbo Wang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Core Facility of Wuhan University, Wuhan 430072, China
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Azarov A, Fernández JG, Zhao J, Djurabekova F, He H, He R, Prytz Ø, Vines L, Bektas U, Chekhonin P, Klingner N, Hlawacek G, Kuznetsov A. Universal radiation tolerant semiconductor. Nat Commun 2023; 14:4855. [PMID: 37563159 PMCID: PMC10415340 DOI: 10.1038/s41467-023-40588-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Accepted: 07/31/2023] [Indexed: 08/12/2023] Open
Abstract
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/β) double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in γ-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the β-to-γ Ga2O3 transformation, as a function of the increased disorder in β-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that γ/β double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.
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Affiliation(s)
- Alexander Azarov
- University of Oslo, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, N-0316, Oslo, Norway.
| | - Javier García Fernández
- University of Oslo, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, N-0316, Oslo, Norway
| | - Junlei Zhao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Flyura Djurabekova
- Department of Physics, University of Helsinki, P.O. Box 43, FI-00014, Helsinki, Finland
| | - Huan He
- Department of Physics, University of Helsinki, P.O. Box 43, FI-00014, Helsinki, Finland
| | - Ru He
- Department of Physics, University of Helsinki, P.O. Box 43, FI-00014, Helsinki, Finland
| | - Øystein Prytz
- University of Oslo, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, N-0316, Oslo, Norway
| | - Lasse Vines
- University of Oslo, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, N-0316, Oslo, Norway
| | - Umutcan Bektas
- Helmholtz-Zentrum Dresden-Rossendorf, D-01328, Dresden, Germany
| | - Paul Chekhonin
- Helmholtz-Zentrum Dresden-Rossendorf, D-01328, Dresden, Germany
| | - Nico Klingner
- Helmholtz-Zentrum Dresden-Rossendorf, D-01328, Dresden, Germany
| | - Gregor Hlawacek
- Helmholtz-Zentrum Dresden-Rossendorf, D-01328, Dresden, Germany
| | - Andrej Kuznetsov
- University of Oslo, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, N-0316, Oslo, Norway.
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Sprincean V, Leontie L, Caraman I, Lupan O, Adeling R, Gurlui S, Carlescu A, Doroftei C, Caraman M. Preparation, Chemical Composition, and Optical Properties of ( β-Ga 2O 3 Composite Thin Films)/(GaS xSe 1-x Lamellar Solid Solutions) Nanostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2052. [PMID: 37513063 PMCID: PMC10385481 DOI: 10.3390/nano13142052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 07/04/2023] [Accepted: 07/10/2023] [Indexed: 07/30/2023]
Abstract
GaSxSe1-x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with weak polarization bonds between them, which allows obtaining, by splitting, plan-parallel lamellae with atomically smooth surfaces. By heat treatment in a normal or water vapor-enriched atmosphere, their plates are covered with a layer consisting of β-Ga2O3 nanowires/nanoribbons. In this work, the elemental and chemical composition, surface morphology, as well as optical, photoluminescent, and photoelectric properties of β-Ga2O3 layer formed on GaSxSe1-x (0 ≤ x ≤ 1) solid solutions (as substrate) are studied. The correlation is made between the composition (x) of the primary material, technological preparation conditions of the oxide-semiconducting layer, and the optical, photoelectric, and photoluminescent properties of β-Ga2O3 (nanosized layers)/GaSxSe1-x structures. From the analysis of the fundamental absorption edge, photoluminescence, and photoconductivity, the character of the optical transitions and the optical band gap in the range of 4.5-4.8 eV were determined, as well as the mechanisms behind blue-green photoluminescence and photoconductivity in the fundamental absorption band region. The photoluminescence bands in the blue-green region are characteristic of β-Ga2O3 nanowires/nanolamellae structures. The photoconductivity of β-Ga2O3 structures on GaSxSe1-x solid solution substrate is determined by their strong fundamental absorption. As synthesized structures hold promise for potential applications in UV receivers, UV-C sources, gas sensors, as well as photocatalytic decomposition of water and organic pollutants.
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Affiliation(s)
- Veaceslav Sprincean
- Faculty of Physics and Engineering, Moldova State University, 60 Alexei Mateevici Str., MD-2009 Chisinau, Moldova
| | - Liviu Leontie
- Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, RO-700506 Iasi, Romania
| | - Iuliana Caraman
- Faculty of Physics and Engineering, Moldova State University, 60 Alexei Mateevici Str., MD-2009 Chisinau, Moldova
| | - Oleg Lupan
- Center for Nanotechnology and Nanosensors, Department of Microelectronics and Biomedical Engineering, Technical University of Moldova, 168, Stefan cel Mare Av., MD-2004 Chisinau, Moldova
- Functional Nanomaterials, Faculty of Engineering, Institute for Materials Science, Kiel University, Kaiserstr. 2, D-24143 Kiel, Germany
| | - Rainer Adeling
- Functional Nanomaterials, Faculty of Engineering, Institute for Materials Science, Kiel University, Kaiserstr. 2, D-24143 Kiel, Germany
| | - Silviu Gurlui
- Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, RO-700506 Iasi, Romania
| | - Aurelian Carlescu
- Integrated Center for Studies in Environmental Science for The North-East Region (CERNESIM), Department of Exact Sciences, Institute of Interdisciplinary Research, Alexandru Ioan Cuza University of Iasi, RO-700506 Iasi, Romania
| | - Corneliu Doroftei
- Integrated Center for Studies in Environmental Science for The North-East Region (CERNESIM), Department of Exact Sciences, Institute of Interdisciplinary Research, Alexandru Ioan Cuza University of Iasi, RO-700506 Iasi, Romania
| | - Mihail Caraman
- Faculty of Physics and Engineering, Moldova State University, 60 Alexei Mateevici Str., MD-2009 Chisinau, Moldova
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Yakimov EB, Polyakov AY, Nikolaev VI, Pechnikov AI, Scheglov MP, Yakimov EE, Pearton SJ. Electrical and Recombination Properties of Polar Orthorhombic κ-Ga 2O 3 Films Prepared by Halide Vapor Phase Epitaxy. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1214. [PMID: 37049308 PMCID: PMC10096940 DOI: 10.3390/nano13071214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Revised: 03/19/2023] [Accepted: 03/27/2023] [Indexed: 06/19/2023]
Abstract
In this study, the structural and electrical properties of orthorhombic κ-Ga2O3 films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga2O3/AlN/Si structures, the formation of two-dimensional hole layers in the Ga2O3 was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of κ-Ga2O3 and AlN. Structural studies indicated that in the thickest κ-Ga2O3/GaN/sapphire layer used, the formation of rotational nanodomains was suppressed. For thick (23 μm and 86 μm) κ-Ga2O3 films grown on GaN/sapphire, the good rectifying characteristics of Ni Schottky diodes were observed. In addition, deep trap spectra and electron beam-induced current measurements were performed for the first time in this polytype. These experiments show that the uppermost 2 µm layer of the grown films contains a high density of rather deep electron traps near Ec - 0.3 eV and Ec - 0.7 eV, whose presence results in the relatively high series resistance of the structures. The diffusion length of the excess charge carriers was measured for the first time in κ-Ga2O3. The film with the greatest thickness of 86 μm was irradiated with protons and the carrier removal rate was about 10 cm-1, which is considerably lower than that for β-Ga2O3.
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Affiliation(s)
- Eugene B. Yakimov
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Academician Ossipyan Str., Chernogolovka 142432, Russia
- Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISiS, 4 Leninsky Avenue, Moscow 119049, Russia
| | - Alexander Y. Polyakov
- Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISiS, 4 Leninsky Avenue, Moscow 119049, Russia
| | - Vladimir I. Nikolaev
- Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISiS, 4 Leninsky Avenue, Moscow 119049, Russia
- Perfect Crystals LLC, 28 Politekhnicheskaya Str., St. Petersburg 194064, Russia
- Ioffe Institute, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia
| | - Alexei I. Pechnikov
- Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISiS, 4 Leninsky Avenue, Moscow 119049, Russia
- Perfect Crystals LLC, 28 Politekhnicheskaya Str., St. Petersburg 194064, Russia
- Ioffe Institute, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia
| | - Mikhail P. Scheglov
- Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISiS, 4 Leninsky Avenue, Moscow 119049, Russia
- Ioffe Institute, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia
| | - Eugene E. Yakimov
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Academician Ossipyan Str., Chernogolovka 142432, Russia
| | - Stephen J. Pearton
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
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9
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Azarov A, Venkatachalapathy V, Karaseov P, Titov A, Karabeshkin K, Struchkov A, Kuznetsov A. Interplay of the disorder and strain in gallium oxide. Sci Rep 2022; 12:15366. [PMID: 36100627 PMCID: PMC9470558 DOI: 10.1038/s41598-022-19191-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Accepted: 08/25/2022] [Indexed: 11/10/2022] Open
Abstract
AbstractIon irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic β-Ga2O3 single crystals by comparing atomic and cluster ion irradiations as well as atomic ions co-implants. The results obtained by a combination of the channeling technique, X-ray diffraction and theoretical calculations show that the disorder accumulation in β-Ga2O3 exhibits superlinear behavior as a function of the collision cascade density. Moreover, the level of strain in the implanted region can be engineered by changing the disorder conditions in the near surface layer. The results can be used for better understanding of the radiation effects in β-Ga2O3 and imply that disorder/strain interplay provides an additional degree of freedom to maintain desirable strain in Ga2O3, potentially applicable to modify the rate of the polymorphic transitions in this material.
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