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Shi S, Cao T, Xi H, Niu J, Jing X, Su H, Yu X, Yang P, Wu Y, Yan X, Tian H, Tsymbal EY, Chen J. Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer. PHYSICAL REVIEW LETTERS 2024; 133:036202. [PMID: 39094151 DOI: 10.1103/physrevlett.133.036202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Revised: 04/08/2024] [Accepted: 06/06/2024] [Indexed: 08/04/2024]
Abstract
Ferroelectric hafnia-based thin films have attracted significant interest due to their compatibility with complementary metal-oxide-semiconductor technology (CMOS). Achieving and stabilizing the metastable ferroelectric phase in these films is crucial for their application in ferroelectric devices. Recent research efforts have concentrated on the stabilization of the ferroelectric phase in hafnia-based films and delving into the mechanisms responsible for this stability. In this study, we experimentally demonstrate that stabilization of the ferroelectric phase in Hf_{0.5}Zr_{0.5}O_{2} (HZO) can be controlled by the interfacial charge transfer and the associated hole doping of HZO. Using the meticulously engineered charge transfer between an La_{1-x}Sr_{x}MnO_{3} buffer layer with variable Sr concentration x and an HZO film, we find the optimal x=0.33 that provides the required hole doping of HZO to most efficiently stabilize its ferroelectric phase. Our theoretical modeling reveals that the competition of the hole distribution between the threefold and fourfold coordinated oxygen sites in HZO controls the enhancement or reduction of the ferroelectric phase. Our findings offer a novel strategy to stabilize the ferroelectric phase of hafnia-based films and provide new insights into the development of ferroelectric devices compatible with CMOS.
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Affiliation(s)
| | | | - Haolong Xi
- School of Materials and Energy, Electron Microscopy Centre of Lanzhou University and Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | | | | | | | | | | | | | | | - He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Zhao HJ, Fu Y, Yu L, Wang Y, Yang Y, Bellaiche L, Ma Y. Creating Ferroelectricity in Monoclinic (HfO_{2})_{1}/(CeO_{2})_{1} Superlattices. PHYSICAL REVIEW LETTERS 2024; 132:256801. [PMID: 38996260 DOI: 10.1103/physrevlett.132.256801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 05/16/2024] [Indexed: 07/14/2024]
Abstract
Ferroelectricity in CMOS-compatible hafnia (HfO_{2}) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO_{2} requires the stabilization of thermodynamically metastable orthorhombic or rhombohedral phases, which entails the introduction of defects (e.g., dopants and vacancies) and pays the price of crystal imperfections, causing unpleasant wake-up and fatigue effects. Here, we report a theoretical strategy on the realization of robust ferroelectricity in HfO_{2}-based ferroelectrics by designing a series of epitaxial (HfO_{2})_{1}/(CeO_{2})_{1} superlattices. The designed ferroelectric superlattices are defects free, and most importantly, on the base of the thermodynamically stable monoclinic phase of HfO_{2}. Consequently, this allows the creation of superior ferroelectric properties with an electric polarization >25 μC/cm^{2} and an ultralow polarization-switching energy barrier at ∼2.5 meV/atom. Our work may open an avenue toward the fabrication of high-performance HfO_{2}-based ferroelectric devices.
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Affiliation(s)
- Hong Jian Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
- International Center of Future Science, Jilin University, Changchun 130012, China
| | - Yuhao Fu
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun 130012, China
| | - Longju Yu
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun 130012, China
| | - Yanchao Wang
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Yurong Yang
- National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
| | | | - Yanming Ma
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun 130012, China
- International Center of Future Science, Jilin University, Changchun 130012, China
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
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Zhou C, Ma L, Feng Y, Kuo CY, Ku YC, Liu CE, Cheng X, Li J, Si Y, Huang H, Huang Y, Zhao H, Chang CF, Das S, Liu S, Chen Z. Enhanced polarization switching characteristics of HfO 2 ultrathin films via acceptor-donor co-doping. Nat Commun 2024; 15:2893. [PMID: 38570498 PMCID: PMC10991407 DOI: 10.1038/s41467-024-47194-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 03/22/2024] [Indexed: 04/05/2024] Open
Abstract
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.
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Affiliation(s)
- Chao Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Liyang Ma
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Yanpeng Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Chang-Yang Kuo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Yu-Chieh Ku
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Cheng-En Liu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Xianlong Cheng
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Jingxuan Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Yangyang Si
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Haoliang Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yan Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Hongjian Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Chun-Fu Chang
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany
| | - Sujit Das
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China.
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China.
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China.
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Cheng H, Tian H, Liu JM, Yang Y. Structure and stability of La- and hole-doped hafnia with/without epitaxial strain. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:205401. [PMID: 38335551 DOI: 10.1088/1361-648x/ad2801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Accepted: 02/09/2024] [Indexed: 02/12/2024]
Abstract
The significance of hafnia in the semiconductor industry has been amplified following the unearthing of its ferroelectric properties. We investigated the structure and electrical properties of La- and hole-doped HfO2with/without epitaxial strain by first-principles calculations. It is found that the charge compensated defect with oxygen vacancy (LaHfVO) and uncompensated defect (LaHf), compared to the undoped case, make the ferroelectric orthorhombicPca21phase (ophase) more stable. Conversely, the electrons compensated defect (LaHf+e) makes the nonpolar monoclinicP21/cphase (mphase) more stable. Furthermore, both pure hole doping (without ions substituent) and compressive strain can stabilize theophase. Our work offers a new perspective on enhancing the ferroelectricity of hafnia.
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Affiliation(s)
- Hao Cheng
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Hao Tian
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
- School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, People's Republic of China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yurong Yang
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
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Yan F, Wu Y, Liu Y, Ai P, Liu S, Deng S, Xue KH, Fu Q, Dong W. Recent progress on defect-engineering in ferroelectric HfO 2: The next step forward via multiscale structural optimization. MATERIALS HORIZONS 2024; 11:626-645. [PMID: 38078479 DOI: 10.1039/d3mh01273e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
The discovery of unconventional scale-free ferroelectricity in HfO2-based fluorite thin films has attracted great attention in recent years for their promising applications in low-power logic and nonvolatile memories. The ferroelectricity of HfO2 is intrinsically originated from the widely accepted ferroelectric metastable orthorhombic Pca21 phase. In the last decade, defect-doping/solid solution has shown excellent prospects in enhancing and stabilizing the ferroelectricity via isovalent or aliovalent defect-engineering. Here, the recent advances in defect-engineered HfO2-based ferroelectrics are first reviewed, including progress in mono-ionic doping and mixed ion-doping. Then, the defect-lattice correlation, the point-defect promoted phase transition kinetics, and the interface-engineered dynamic behaviour of oxygen vacancy are summarized. In addition, thin film preparation and ion bombardment doping are summarized. Finally, the outlook and challenges are discussed. A multiscale structural optimization approach is suggested for further property optimization. This article not only covers an overview of the state-of-art advances of defects in fluorite ferroelectrics, but also future prospects that may inspire their further property-optimization via defect-engineering.
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Affiliation(s)
- Fengjun Yan
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yao Wu
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yilong Liu
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Pu Ai
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province & Department of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Kan-Hao Xue
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Qiuyun Fu
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518000, P. R. China
| | - Wen Dong
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518000, P. R. China
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Cheng H, Jiao P, Wang J, Qing M, Deng Y, Liu JM, Bellaiche L, Wu D, Yang Y. Tunable and parabolic piezoelectricity in hafnia under epitaxial strain. Nat Commun 2024; 15:394. [PMID: 38195734 PMCID: PMC10776838 DOI: 10.1038/s41467-023-44207-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Accepted: 12/04/2023] [Indexed: 01/11/2024] Open
Abstract
Piezoelectrics are a class of functional materials that have been extensively used for application in modern electro-mechanical and mechatronics technologies. The sign of longitudinal piezoelectric coefficients is typically positive but recently a few ferroelectrics, such as ferroelectric polymer poly(vinylidene fluoride) and van der Waals ferroelectric CuInP2S6, were experimentally found to have negative piezoelectricity. Here, using first-principles calculation and measurements, we show that the sign of the longitudinal linear piezoelectric coefficient of HfO2 can be tuned from positive to negative via epitaxial strain. Nonlinear and even parabolic piezoelectric behaviors are further found at tensile epitaxial strain. This parabolic piezoelectric behavior implies that the polarization decreases when increasing the magnitude of either compressive or tensile longitudinal strain, or, equivalently, that the strain increases when increasing the magnitude of electric field being either parallel or antiparallel to the direction of polarization. The unusual piezoelectric effects are from the chemical coordination of the active oxygen atoms. These striking piezoelectric features of positive and negative sign, as well as linear and parabolical behaviors, expand the current knowledge in piezoelectricity and broaden the potential of piezoelectric applications towards electro-mechanical and communications technology.
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Affiliation(s)
- Hao Cheng
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Peijie Jiao
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Jian Wang
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Mingkai Qing
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Yu Deng
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
| | - Laurent Bellaiche
- Physics Department, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
| | - Di Wu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China.
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China.
| | - Yurong Yang
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China.
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China.
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Ma L, Wu J, Zhu T, Huang Y, Lu Q, Liu S. Ultrahigh Oxygen Ion Mobility in Ferroelectric Hafnia. PHYSICAL REVIEW LETTERS 2023; 131:256801. [PMID: 38181338 DOI: 10.1103/physrevlett.131.256801] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Accepted: 11/21/2023] [Indexed: 01/07/2024]
Abstract
Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet studies of ferroelectrics and ionic conductors are often considered separate fields. Based on first-principles calculations and deep-learning-assisted large-scale molecular dynamics simulations, we report ferroelectric-switching-promoted oxygen ion transport in HfO_{2}, a wide-band-gap insulator with both ferroelectricity and ionic conductivity. Applying a unidirectional bias can activate multiple switching pathways in ferroelectric HfO_{2}, leading to polar-antipolar phase cycling that appears to contradict classical electrodynamics. This apparent conflict is resolved by the geometric-quantum-phase nature of electric polarization that carries no definite direction. Our molecular dynamics simulations demonstrate bias-driven successive ferroelectric transitions facilitate ultrahigh oxygen ion mobility at moderate temperatures, highlighting the potential of combining ferroelectricity and ionic conductivity for the development of advanced materials and technologies.
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Affiliation(s)
- Liyang Ma
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Jing Wu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Tianyuan Zhu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Yiwei Huang
- School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China
| | - Qiyang Lu
- School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang 310030, China
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
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Lee J, Yang K, Kwon JY, Kim JE, Han DI, Lee DH, Yoon JH, Park MH. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide. NANO CONVERGENCE 2023; 10:55. [PMID: 38038784 PMCID: PMC10692067 DOI: 10.1186/s40580-023-00403-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Accepted: 11/08/2023] [Indexed: 12/02/2023]
Abstract
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most frequently observed intrinsic defect in HfO2-based films, determines the physical/electrical properties and device performance. Vo influences the polymorphism and the resulting ferroelectric properties of HfO2. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the Vo concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of Vo form the main mechanism behind the RS behavior observed in HfO2, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to Vo. Therefore, the mechanism of Vo formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO2 should be understood. This study comprehensively reviews the literature on Vo in HfO2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO2-based semiconductor devices.
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Affiliation(s)
- Jaewook Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Ju Young Kwon
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
| | - Ji Eun Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
| | - Dong In Han
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Dong Hyun Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
| | - Min Hyuk Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
- Research Institute of Advanced Materials, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
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