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Wang H, Liu H, Feng X, Cao J, Wu W, Lai S, Gao W, Xiao C, Yang SA. Intrinsic Nonlinear Spin Hall Effect and Manipulation of Perpendicular Magnetization. PHYSICAL REVIEW LETTERS 2025; 134:056301. [PMID: 39983173 DOI: 10.1103/physrevlett.134.056301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2024] [Accepted: 12/20/2024] [Indexed: 02/23/2025]
Abstract
We propose an intrinsic nonlinear spin Hall effect, which enables the generation of collinearly polarized spin current in a large class of nonmagnetic materials with the corresponding linear response being symmetry forbidden. This opens a new avenue for field-free switching of perpendicular magnetization, which is required for the next-generation information storage technology. We develop the microscopic theory of this effect and clarify its quantum origin in band geometric quantities which can be enhanced by topological nodal features. Combined with first-principles calculations, we predict pronounced effects at room temperature in topological metals PbTaSe_{2} and PdGa. Our work establishes a fundamental nonlinear response in spin transport and opens the door to exploring spintronic applications based on nonlinear spin Hall effect.
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Affiliation(s)
- Hui Wang
- Nanyang Technological University, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Singapore 637371, Singapore
| | - Huiying Liu
- Beihang University, School of Physics, Beijing 100191, China
| | - Xukun Feng
- Singapore University of Technology and Design, Research Laboratory for Quantum Materials, Singapore 487372, Singapore
| | - Jin Cao
- University of Macau, Institute of Applied Physics and Materials Engineering, Faculty of Science and Technology, Macau, China
| | - Weikang Wu
- Shandong University, Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Jinan 250061, China
| | - Shen Lai
- University of Macau, Institute of Applied Physics and Materials Engineering, Faculty of Science and Technology, Macau, China
| | - Weibo Gao
- Nanyang Technological University, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Singapore 637371, Singapore
- Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore
- National University of Singapore, Centre for Quantum Technologies, Singapore
| | - Cong Xiao
- Fudan University, Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Shanghai 200433, China
| | - Shengyuan A Yang
- University of Macau, Institute of Applied Physics and Materials Engineering, Faculty of Science and Technology, Macau, China
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Li L, Cui C, Zhang RW, Yu ZM, Yao Y. Planar Hall plateau in magnetic Weyl semimetals. Sci Bull (Beijing) 2025; 70:187-192. [PMID: 39643484 DOI: 10.1016/j.scib.2024.11.026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2024] [Revised: 10/19/2024] [Accepted: 11/05/2024] [Indexed: 12/09/2024]
Abstract
Despite the rapid progress in the study of planar Hall effect (PHE) in recent years, all the previous works only showed that the PHE is connected to local geometric quantities, such as Berry curvature. Here, for the first time, we point out that the PHE in magnetic Weyl semimetals is directly related to a global quantity, namely, the Chern number of the Weyl point. This leads to a remarkable consequence that the PHE observation predicted here is robust against many system details, including the Fermi energy. The main difference between non-magnetic and magnetic Weyl points is that the latter breaks time-reversal symmetry T, thus generally possessing an energy tilt. Via semiclassical Boltzmann theory, we investigate the PHE in generic magnetic Weyl models with energy tilt and arbitrary Chern number. We find that by aligning the magnetic and electric fields in the same direction, the trace of the PHE conductivity contributed by Berry curvature and orbital moment is proportional to the Chern number and the energy tilt of the Weyl points, resulting in a previously undiscovered quantized PHE plateau by varying the Fermi energy. We further confirm the existence of PHE plateaus in a more realistic lattice model without T symmetry. By proposing a new quantized physical quantity, our work not only provides a new tool for extracting the topological character of the Weyl points but also suggests that the interplay between topology and magnetism can give rise to intriguing physics.
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Affiliation(s)
- Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Chaoxi Cui
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Run-Wu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhi-Ming Yu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai 519000, China.
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai 519000, China.
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Nakamura A, Nishihaya S, Ishizuka H, Kriener M, Watanabe Y, Uchida M. In-Plane Anomalous Hall Effect Associated with Orbital Magnetization: Measurements of Low-Carrier Density Films of a Magnetic Weyl Semimetal. PHYSICAL REVIEW LETTERS 2024; 133:236602. [PMID: 39714669 DOI: 10.1103/physrevlett.133.236602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Revised: 09/22/2024] [Accepted: 10/30/2024] [Indexed: 12/24/2024]
Abstract
For over a century, the Hall effect, a transverse effect under an out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature has revealed the potential that even an in-plane magnetic field can induce an anomalous Hall effect, but its experimental demonstration has remained difficult due to its potentially small magnitude and strict symmetry requirements. Here, we report observation of the in-plane anomalous Hall effect by measuring low-carrier density films of magnetic Weyl semimetal EuCd_{2}Sb_{2}. Anomalous Hall resistance exhibits distinct threefold rotational symmetry for changes in the in-plane field component, and this can be understood in terms of out-of-plane Weyl points splitting or orbital magnetization induced by the in-plane field, as also confirmed by model calculation. Our findings demonstrate the importance of the in-plane field to control the Hall effect, accelerating materials development and further exploration of various in-plane field-induced phenomena.
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Cui Y, Li Z, Chen H, Wu Y, Chen Y, Pei K, Wu T, Xie N, Che R, Qiu X, Liu Y, Yuan Z, Wu Y. Antisymmetric planar Hall effect in rutile oxide films induced by the Lorentz force. Sci Bull (Beijing) 2024; 69:2362-2369. [PMID: 38944633 DOI: 10.1016/j.scib.2024.06.009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2024] [Revised: 05/06/2024] [Accepted: 06/03/2024] [Indexed: 07/01/2024]
Abstract
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect (APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.
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Affiliation(s)
- Yongwei Cui
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - Zhaoqing Li
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, China
| | - Haoran Chen
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - Yunzhuo Wu
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - Yue Chen
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, China; Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Ke Pei
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai 200438, China
| | - Tong Wu
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - Nian Xie
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Renchao Che
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai 200438, China; Zhejiang Laboratory, Hangzhou 311100, China
| | - Xuepeng Qiu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Yi Liu
- Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Zhe Yuan
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, China.
| | - Yizheng Wu
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China.
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Feng Q, Duan J, Wang P, Jiang W, Peng H, Zhong J, Cao J, Hu Y, Li Q, Wang Q, Zhou J, Yao Y. Heterodimensional Kondo superlattices with strong anisotropy. Nat Commun 2024; 15:5491. [PMID: 38944656 PMCID: PMC11214635 DOI: 10.1038/s41467-024-49618-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Accepted: 06/12/2024] [Indexed: 07/01/2024] Open
Abstract
Localized magnetic moments in non-magnetic materials, by interacting with the itinerary electrons, can profoundly change the metallic properties, developing various correlated phenomena such as the Kondo effect, heavy fermion, and unconventional superconductivity. In most Kondo systems, the localized moments are introduced through magnetic impurities. However, the intrinsic magnetic properties of materials can also be modulated by the dimensionality. Here, we report the observation of Kondo effect in a heterodimensional superlattice VS2-VS, in which arrays of the one-dimensional (1D) VS chains are encapsulated by two-dimensional VS2 layers. In such a heterodimensional Kondo superlattice, we observe the typical Kondo effect but with intriguing anisotropic field dependence. This unique anisotropy is determined to originate from the magnetic anisotropy which has the root in the unique 1D chains in the structure, as corroborated by the first-principles calculation. Our results open up a novel avenue of studying exotic correlated physics in heterodimensional materials.
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Affiliation(s)
- Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
| | - Ping Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Wei Jiang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Jin Cao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Yuqing Hu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Qiuli Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Qinsheng Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Jiadong Zhou
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
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Li W, Wang CM. An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:205001. [PMID: 38335548 DOI: 10.1088/1361-648x/ad2804] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 02/09/2024] [Indexed: 02/12/2024]
Abstract
The anomalous Hall effect induced by the in-plane magnetic field (anomalous planar Hall effect) has recently attracted a lot of interests due to its numerous advantages. Although several schemes have been put forward in theory, experimental observations in many materials so far are often accompanied by planar Hall effects due to other mechanisms, rather than the pure anomalous planar Hall effect (APHE). We propose the surface state of the strained topological insulator as an ideal candidate to observe this effect. The surface state exhibits a pure APHE, characterized by a linear dependence on the magnetic field and a 2πperiodicity, which remains robust against the scattering of non-magnetic and various magnetic impurities, as long as the uniaxial strain preserves mirror symmetry. Although a general strain that breaks the mirror symmetry can induce the conventional Drude Hall effect, the anomalous contribution remains dominant. Furthermore, we present a feasible scheme to distinguish between the two contributions based on their distinct magnetic field dependencies. Our work is of great significance for promoting experimental observation of the APHE and provides reference value in the search for other realistic materials.
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Affiliation(s)
- Wenrong Li
- Department of Physics, Shanghai Normal University, Shanghai 200234, People's Republic of China
| | - C M Wang
- Department of Physics, Shanghai Normal University, Shanghai 200234, People's Republic of China
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Liu L, Pezo A, Ovalle DG, Zhou C, Shen Q, Chen H, Zhao T, Lin W, Jia L, Zhang Q, Zhou H, Yang Y, Manchon A, Chen J. Crystal Symmetry-Dependent In-Plane Hall Effect. NANO LETTERS 2024; 24:733-740. [PMID: 38166427 DOI: 10.1021/acs.nanolett.3c04242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
The Hall effect has played a vital role in unraveling the intricate properties of electron transport in solid materials. Here, we report on a crystal symmetry-dependent in-plane Hall effect (CIHE) observed in a CuPt/CoPt ferromagnetic heterostructure. Unlike the planar Hall effect (PHE), the CIHE in CuPt/CoPt strongly depends on the current flowing direction (ϕI) with respect to the crystal structure. It reaches its maximum when the current is applied along the low crystal-symmetry axes and vanishes when applied along the high crystal-symmetry axes, exhibiting an unconventional angular dependence of cos(3ϕI). Utilizing a symmetry analysis based on the Invariant Theory, we demonstrate that the CIHE can exist in magnetic crystals possessing C3v symmetry. Using a tight-binding model and realistic first-principles calculations on the metallic heterostructure, we find that the CIHE originates from the trigonal warping of the Fermi surface. Our observations highlight the critical role of crystal symmetry in generating new types of Hall effects.
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Affiliation(s)
- Liang Liu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Tsung-Dao Lee Institute, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Hefei National Laboratory, Hefei 230088, China
- Shanghai Research Center for Quantum Sciences, 99 Xiupu Road, Shanghai 201315, China
| | - Armando Pezo
- Aix-Marseille Université, CNRS, CINaM, 13288 Marseille, France
| | | | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Qia Shen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Tsung-Dao Lee Institute, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Hongliang Chen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Tsung-Dao Lee Institute, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Weinan Lin
- Department of Physics, Jiujiang Research Institute, Xiamen University, Xiamen 361005, China
| | - Lanxin Jia
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Qihan Zhang
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Hengan Zhou
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Yumeng Yang
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | | | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
- Chongqing Research Institute, National University of Singapore, Chongqing 401120, China
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