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Gong R, Du X, Janzen E, Liu V, Liu Z, He G, Ye B, Li T, Yao NY, Edgar JH, Henriksen EA, Zu C. Isotope engineering for spin defects in van der Waals materials. Nat Commun 2024; 15:104. [PMID: 38168074 PMCID: PMC10761865 DOI: 10.1038/s41467-023-44494-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h10B15N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T2 and relaxation time T1. For quantum sensing, [Formula: see text] centers in our h10B15N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the [Formula: see text] hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor 15N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.
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Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xinyi Du
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Eli Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Vincent Liu
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Norman Y Yao
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
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Happacher J, Bocquel J, Dinani HT, Tschudin MA, Reiser P, Broadway DA, Maze JR, Maletinsky P. Temperature-Dependent Photophysics of Single NV Centers in Diamond. PHYSICAL REVIEW LETTERS 2023; 131:086904. [PMID: 37683170 DOI: 10.1103/physrevlett.131.086904] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 04/26/2023] [Accepted: 06/14/2023] [Indexed: 09/10/2023]
Abstract
We present a comprehensive study of the temperature- and magnetic-field-dependent photoluminescence (PL) of individual NV centers in diamond, spanning the temperature-range from cryogenic to ambient conditions. We directly observe the emergence of the NV's room-temperature effective excited-state structure and provide a clear explanation for a previously poorly understood broad quenching of NV PL at intermediate temperatures around 50 K, as well as the subsequent revival of NV PL. We develop a model based on two-phonon orbital averaging that quantitatively explains all of our findings, including the strong impact that strain has on the temperature dependence of the NV's PL. These results complete our understanding of orbital averaging in the NV excited state and have significant implications for the fundamental understanding of the NV center and its applications in quantum sensing.
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Affiliation(s)
- Jodok Happacher
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Juanita Bocquel
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Hossein T Dinani
- Escuela de Ingeniería, Facultad de Ciencias, Ingeniería y Tecnología, Universidad Mayor, Santiago 7500994, Chile
| | - Märta A Tschudin
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Patrick Reiser
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - David A Broadway
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Jeronimo R Maze
- Facultad de Física, Pontificia Universidad Católica de Chile, Santiago 7820436, Chile
| | - Patrick Maletinsky
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
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