Intrinsic Nonlinear Hall Detection of the Néel Vector for Two-Dimensional Antiferromagnetic Spintronics

Intrinsic Nonlinear Spin Hall Effect and Manipulation of Perpendicular Magnetization

We propose an intrinsic nonlinear spin Hall effect, which enables the generation of collinearly polarized spin current in a large class of nonmagnetic materials with the corresponding linear response being symmetry forbidden. This opens a new avenue for field-free switching of perpendicular magnetization, which is required for the next-generation information storage technology. We develop the microscopic theory of this effect and clarify its quantum origin in band geometric quantities which can be enhanced by topological nodal features. Combined with first-principles calculations, we predict pronounced effects at room temperature in topological metals PbTaSe_{2} and PdGa. Our work establishes a fundamental nonlinear response in spin transport and opens the door to exploring spintronic applications based on nonlinear spin Hall effect.

Electrically Switchable Longitudinal Nonlinear Conductivity in Magnetic Semiconductors

Writing data by electric field (as opposed to electric current) offers promises for energy efficient memory devices. While this data writing scheme is enabled by the magnetoelectric effect, the narrow spectrum of room-temperature magnetoelectrics hinders the design of practical magnetoelectric memories, and the exploration of other mechanisms toward low-power memories is greatly demanding. Here, we propose a mechanism that allows the electric-field writing of data beyond the framework of magnetoelectric effect. By symmetry analysis, we show that electric field can induce longitudinal nonlinear conductivity (LNC) in a wide spectrum of magnetic materials, including ferromagnets, antiferromagnets, magnetoelectrics, and nonmagnetoelectrics. The LNC is electrically switchable by reversing the electric field, where the switched LNC is detectable by transport measurements. Our first-principles simulations combined with transport calculations further predict YFeO_{3} and CuFeS_{2} (room-temperature antiferromagnets) to showcase electrically switchable LNC. Our Letter helps enrich the research avenues in nonlinear charge transport, and offers a pathway for designing energy efficient devices based on LNC.

Planar Hall plateau in magnetic Weyl semimetals

Despite the rapid progress in the study of planar Hall effect (PHE) in recent years, all the previous works only showed that the PHE is connected to local geometric quantities, such as Berry curvature. Here, for the first time, we point out that the PHE in magnetic Weyl semimetals is directly related to a global quantity, namely, the Chern number of the Weyl point. This leads to a remarkable consequence that the PHE observation predicted here is robust against many system details, including the Fermi energy. The main difference between non-magnetic and magnetic Weyl points is that the latter breaks time-reversal symmetry T, thus generally possessing an energy tilt. Via semiclassical Boltzmann theory, we investigate the PHE in generic magnetic Weyl models with energy tilt and arbitrary Chern number. We find that by aligning the magnetic and electric fields in the same direction, the trace of the PHE conductivity contributed by Berry curvature and orbital moment is proportional to the Chern number and the energy tilt of the Weyl points, resulting in a previously undiscovered quantized PHE plateau by varying the Fermi energy. We further confirm the existence of PHE plateaus in a more realistic lattice model without T symmetry. By proposing a new quantized physical quantity, our work not only provides a new tool for extracting the topological character of the Weyl points but also suggests that the interplay between topology and magnetism can give rise to intriguing physics.

Ultrahigh Néel Temperature Antiferromagnetism and Ultrafast Laser-Controlled Demagnetization in a Dirac Nodal Line MoB3 Monolayer

Two-dimensional (2D) antiferromagnetic (AFM) materials boasting a high Néel temperature (TN), high carrier mobility, and fast spin response under an external field are in great demand for efficient spintronics. Herein, we theoretically present the MoB3 monolayer as an ideal 2D platform for AFM spintronics. The AFM MoB3 monolayer features a symmetry-protected, 4-fold degenerate Dirac nodal line (DNL) at the Fermi level. It demonstrates a high magnetic anisotropy energy of 865 μeV/Mo and an ultrahigh TN of 1050 K, one of the highest recorded for 2D AFMs. Importantly, we reveal the ultrafast demagnetization of AFM MoB3 under laser irradiation, which induces a rapid transition from a DNL semimetallic state to a metallic state on the time scale of hundreds of femtoseconds. This work presents an effective method for designing advanced spintronics using 2D high-temperature DNL semimetals and opens up a new idea for ultrafast modulation of magnetization in topological semimetals.

Layer Hall Detection of the Néel Vector in Centrosymmetric Magnetoelectric Antiferromagnets

The efficient detection of the Néel vector in antiferromagnets is one of the prerequisites toward antiferromagnetic spintronic devices and remains a challenging problem. Here, we propose that the layer Hall effect can be used to efficiently detect the Néel vector in centrosymmetric magnetoelectric antiferromagnets. Thanks to the robust surface magnetization of magnetoelectric antiferromagnets, the combination of sizable exchange field and an applied electric field results in the layer-locked spin-polarized band edges. Moreover, the Berry curvature can be engineered efficiently by an electric field, which consequently gives rise to the layer-locked Berry curvature responsible for the layer Hall effect. Importantly, it is demonstrated that the layer Hall conductivity strongly depends on the Néel vector orientation and exhibits rich electromagnetic responses, which can be used to detect the Néel vector reversal. Based on density functional theory calculations, we exemplify those phenomena in the prototypical Cr_{2}O_{3} compound. A complete list of the magnetic point groups sustaining the layer Hall effect is presented, aiding the search for realistic materials. Our work proposes a novel approach to detect the Néel vector and holds great promise for antiferromagnetic spintronic applications.

Nonlinear Valley Hall Effect

The valley Hall effect arises from valley-contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal symmetry, where the linear and second-order charge Hall currents vanish along with the linear valley Hall current. We show that a second-order valley Hall signal emerges from the electric field correction to the Berry curvature, provided a valley-contrasting anisotropic dispersion is engineered. We demonstrate the nonlinear valley Hall effect in tilted massless Dirac fermions in strained graphene and organic semiconductors. Our Letter opens up the possibility of controlling the valley degree of freedom in inversion symmetric systems via nonlinear valleytronics.