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Tarasov AS, Tarasov IA, Yakovlev IA, Rautskii MV, Bondarev IA, Lukyanenko AV, Platunov MS, Volochaev MN, Efimov DD, Goikhman AY, Belyaev BA, Baron FA, Shanidze LV, Farle M, Varnakov SN, Ovchinnikov SG, Volkov NV. Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe 3+xSi 1-x/Ge/Fe 3+xSi 1-x Hybrid Structures: Effect on Magnetic and Electric Transport Properties. NANOMATERIALS 2021; 12:nano12010131. [PMID: 35010081 PMCID: PMC8747018 DOI: 10.3390/nano12010131] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Revised: 12/23/2021] [Accepted: 12/26/2021] [Indexed: 11/26/2022]
Abstract
Three-layer iron-rich Fe3+xSi1−x/Ge/Fe3+xSi1−x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1−x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1−x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1−x. The average lattice distortion and residual stress of the upper Fe3+xSi1−x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of −0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1−x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1−x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1−x, which implies the epitaxial orientation relationship of Fe3+xSi1−x (111)[0−11] || Ge(111)[1−10] || Fe3+xSi1−x (111)[0−11] || Si(111)[1−10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Affiliation(s)
- Anton S. Tarasov
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041 Krasnoyarsk, Russia
- Correspondence: (A.S.T.); (I.A.T.)
| | - Ivan A. Tarasov
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Correspondence: (A.S.T.); (I.A.T.)
| | - Ivan A. Yakovlev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
| | - Mikhail V. Rautskii
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
| | - Ilya A. Bondarev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
| | - Anna V. Lukyanenko
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041 Krasnoyarsk, Russia
| | - Mikhail S. Platunov
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis SB RAS, Nikol’skiy Prospekt 1, 630559 Kol’tsovo, Russia
| | - Mikhail N. Volochaev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia
| | - Dmitriy D. Efimov
- REC Functional Nanomaterials, Immanuel Kant Baltic Federal University, 236016 Kaliningrad, Russia; (D.D.E.); (A.Y.G.)
| | - Aleksandr Yu. Goikhman
- REC Functional Nanomaterials, Immanuel Kant Baltic Federal University, 236016 Kaliningrad, Russia; (D.D.E.); (A.Y.G.)
| | - Boris A. Belyaev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041 Krasnoyarsk, Russia
| | - Filipp A. Baron
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
| | - Lev V. Shanidze
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
| | - Michael Farle
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
| | - Sergey N. Varnakov
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
| | - Sergei G. Ovchinnikov
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041 Krasnoyarsk, Russia
| | - Nikita V. Volkov
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; (I.A.Y.); (M.V.R.); (I.A.B.); (A.V.L.); (M.S.P.); (M.N.V.); (B.A.B.); (F.A.B.); (L.V.S.); (M.F.); (S.N.V.); (S.G.O.); (N.V.V.)
- Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041 Krasnoyarsk, Russia
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Gupta T, Hannon JB, Tersoff J, Tromp RM, Ott JA, Bruley J, Steingart DA. Strain-driven mound formation of substrate under epitaxial nanoparticles. NANO LETTERS 2015; 15:34-38. [PMID: 25506710 DOI: 10.1021/nl502516y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We observe the growth of crystalline SiC nanoparticles on Si(001) at 900 °C using in situ electron microscopy. Following nucleation and growth of the SiC, there is a massive migration of Si, forming a crystalline Si mound underneath each nanoparticle that lifts it 4-5 nm above the initial growth surface. The volume of the Si mounds is roughly five to seven times the volume of the SiC nanoparticles. We propose that relaxation of strain drives the mound formation. This new mechanism for relieving interfacial strain, which involves a dramatic restructuring of the substrate, is in striking contrast to the familiar scenario in which only the deposited material restructures to relieve strain.
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Affiliation(s)
- Tanya Gupta
- Department of Mechanical and Aerospace Engineering and the Andlinger Center for Energy and The Environment and ‡IBM Research Division, T. J. Watson Research Center , Yorktown Heights, New York 10598, United States
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Jaramillo DF, Téllez G, González DL, Einstein TL. Interacting steps with finite-range interactions: analytical approximation and numerical results. PHYSICAL REVIEW. E, STATISTICAL, NONLINEAR, AND SOFT MATTER PHYSICS 2013; 87:052405. [PMID: 23767552 DOI: 10.1103/physreve.87.052405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2013] [Indexed: 06/02/2023]
Abstract
We calculate an analytical expression for the terrace-width distribution P(s) for an interacting step system with nearest- and next-nearest-neighbor interactions. Our model is derived by mapping the step system onto a statistically equivalent one-dimensional system of classical particles. The validity of the model is tested with several numerical simulations and experimental results. We explore the effect of the range of interactions q on the functional form of the terrace-width distribution and pair correlation functions. For physically plausible interactions, we find modest changes when next-nearest neighbor interactions are included and generally negligible changes when more distant interactions are allowed. We discuss methods for extracting from simulated experimental data the characteristic scale-setting terms in assumed potential forms.
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Profile of Ellen D. Williams. Proc Natl Acad Sci U S A 2008; 105:16415-7. [DOI: 10.1073/pnas.0809617105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
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Douarche C, Cortès R, Henry de Villeneuve C, Roser SJ, Braslau A. DNA adsorption at functionalized Si/buffer interfaces studied by x-ray reflectivity. J Chem Phys 2008; 128:225108. [DOI: 10.1063/1.2927256] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Baumberger F, Hengsberger M, Muntwiler M, Shi M, Krempasky J, Patthey L, Osterwalder J, Greber T. Step-lattice-induced band-gap opening at the fermi level. PHYSICAL REVIEW LETTERS 2004; 92:016803. [PMID: 14754009 DOI: 10.1103/physrevlett.92.016803] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2003] [Indexed: 05/24/2023]
Abstract
The interaction of the Shockley surface state with the step lattice of vicinal Cu(111) leads to the formation of an electronic superlattice state. On Cu(443), where the average terrace length forms a "shape resonance" with the Fermi wavelength, we find a step-lattice-induced band-gap opening at the Fermi level. A gap magnitude >200 meV is inferred from high resolution photoemission experiments and line shape analysis. The corresponding energy gain with respect to a gapless case is approximately 11 meV/unit cell, and is a substantial contribution to the stabilization of the step lattice.
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Affiliation(s)
- F Baumberger
- Physikinstitut der Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
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de Theije FK, van der Laag NJ, Plomp M, van Enckevort WJP. A surface topographic investigation of {001} diamond surfaces etched in oxygen. ACTA ACUST UNITED AC 2000. [DOI: 10.1080/01418610008212078] [Citation(s) in RCA: 27] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Blagojević B, Duxbury PM. Atomic diffusion, step relaxation, and step fluctuations. PHYSICAL REVIEW. E, STATISTICAL PHYSICS, PLASMAS, FLUIDS, AND RELATED INTERDISCIPLINARY TOPICS 1999; 60:1279-91. [PMID: 11969886 DOI: 10.1103/physreve.60.1279] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/1999] [Indexed: 04/18/2023]
Abstract
We show that the dynamics of the pair correlation function in a step train can pinpoint the dominant relaxation mechanism occurring at a crystal surface. Evaporation-condensation and step-edge diffusion do not produce dynamical correlations between neighboring steps, while terrace diffusion may lead to correlations which fall off like a power law with distance and which are peaked at a characteristic time. We derive these results within a "real space" Langevin formalism which is based on diffusion kernels which are different for each mass transport process. We validate this formalism by reproducing the step fluctuation autocorrelation function. We then derive results on the pair correlation between different steps. Results for solvable limiting cases are summarized in Tables I and II of the paper. As an intermediate step in the analysis we also find expressions for the relaxation time tau(pq) of a mode of wave number q along the steps and wave number p perpendicular to the steps, which we also discuss and compare with prior work.
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Affiliation(s)
- B Blagojević
- Department of Physics and Astronomy and Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824-1116, USA
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Suzuki A, Yamazaki M, Kobiki Y, Suzuki H. Surface Domains and Roughness of Polymer Gels Observed by Atomic Force Microscopy. Macromolecules 1997. [DOI: 10.1021/ma961598r] [Citation(s) in RCA: 68] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- A. Suzuki
- Department of Materials Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama, 240 Japan
| | - M. Yamazaki
- Department of Materials Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama, 240 Japan
| | - Y. Kobiki
- Department of Materials Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama, 240 Japan
| | - H. Suzuki
- Department of Materials Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama, 240 Japan
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Xu W, Adams JB, Einstein TL. Oscillatory interaction of steps on W{110}. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:2910-2916. [PMID: 9986148 DOI: 10.1103/physrevb.54.2910] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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11
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Gravil PA, Holloway S. Roughening and melting of stepped aluminum surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:11128-11145. [PMID: 9982686 DOI: 10.1103/physrevb.53.11128] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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12
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Thermodynamics and Statistical Mechanics of Surfaces. ACTA ACUST UNITED AC 1996. [DOI: 10.1016/s1573-4331(96)80007-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register]
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Kuipers L, Hoogeman MS, Frenken JW. Step and kink dynamics on Au(110) and Pb(111) studied with a high-speed STM. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:11387-11397. [PMID: 9980245 DOI: 10.1103/physrevb.52.11387] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Witte G, Braun J, Lock A, Toennies JP. Helium-atom-scattering study of the dispersion curves of step-localized phonons on Cu(211) and Cu(511). PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:2165-2176. [PMID: 9981293 DOI: 10.1103/physrevb.52.2165] [Citation(s) in RCA: 31] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Shchukin VA, Borovkov AI, Ledentsov NN, Kop'ev PS. Theory of quantum-wire formation on corrugated surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:17767-17779. [PMID: 9978810 DOI: 10.1103/physrevb.51.17767] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Shchukin VA, Borovkov AI, Ledentsov NN, Bimberg D. Tuning and breakdown of faceting under externally applied stress. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:10104-10118. [PMID: 9977685 DOI: 10.1103/physrevb.51.10104] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Sato M, Uwaha M. Morphological instability caused by asymmetry in step kinetics. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:11172-11175. [PMID: 9977834 DOI: 10.1103/physrevb.51.11172] [Citation(s) in RCA: 41] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Hibino H, Homma Y, Ogino T. Real-space observation of (111) facet formation on vicinal Si(111) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:7753-7761. [PMID: 9977358 DOI: 10.1103/physrevb.51.7753] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Saito Y, Uwaha M. Fluctuation and instability of steps in a diffusion field. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:10677-10692. [PMID: 10009896 DOI: 10.1103/physrevb.49.10677] [Citation(s) in RCA: 45] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Rolley E, Chevalier E, Guthmann C, Balibar S. Stepped surfaces of hcp helium-4 crystals. PHYSICAL REVIEW LETTERS 1994; 72:872-875. [PMID: 10056556 DOI: 10.1103/physrevlett.72.872] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Hibino H, Ogino T. Transient step bunching on a vicinal Si(111) surface. PHYSICAL REVIEW LETTERS 1994; 72:657-660. [PMID: 10056490 DOI: 10.1103/physrevlett.72.657] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Leprince L, Houzay F, Moison JM. Reconstruction, step ordering, and frustration on vicinal GaAs surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:14683-14686. [PMID: 10007898 DOI: 10.1103/physrevb.48.14683] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bartelt NC, Goldberg JL, Einstein TL, Williams ED, Heyraud JC, Métois JJ. Brownian motion of steps on Si(111). PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:15453-15456. [PMID: 10008088 DOI: 10.1103/physrevb.48.15453] [Citation(s) in RCA: 99] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Phaneuf RJ, Bartelt NC, Williams ED, Swiech W, Bauer E. Crossover from metastable to unstable facet growth on Si(111). PHYSICAL REVIEW LETTERS 1993; 71:2284-2287. [PMID: 10054634 DOI: 10.1103/physrevlett.71.2284] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Iwasaki H, Yoshinobu T. Self-affine growth of copper electrodeposits. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8282-8285. [PMID: 10007020 DOI: 10.1103/physrevb.48.8282] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kitamura N, Swartzentruber BS, Lagally MG, Webb MB. Variable-temperature STM measurements of step kinetics on Si(001). PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:5704-5707. [PMID: 10009100 DOI: 10.1103/physrevb.48.5704] [Citation(s) in RCA: 50] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Shi AC, Wortis M. Relaxation of surface atoms in NaCl: Influence on the equilibrium crystal shape. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9804-9815. [PMID: 10005052 DOI: 10.1103/physrevb.47.9804] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tian Z, Rahman TS. Energetics of stepped Cu surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9751-9759. [PMID: 10005047 DOI: 10.1103/physrevb.47.9751] [Citation(s) in RCA: 57] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Jakob P, Chabal YJ, Raghavachari K, Christman SB. Discrete nature of inhomogeneity on stepped H/Si(111) surfaces: Spectroscopic identification of individual terrace sizes. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:6839-6842. [PMID: 10004674 DOI: 10.1103/physrevb.47.6839] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Stevens JL, Worthington MS, Tsong IS. 4 x 1 reconstruction of indium deposited on vicinal Si(111) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:1453-1459. [PMID: 10006159 DOI: 10.1103/physrevb.47.1453] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
|
31
|
Girard J, Gauthier S, Rousset S, Klein J. Investigations of the morphology of copper surfaces by scanning tunneling microscopy. ACTA ACUST UNITED AC 1993. [DOI: 10.1051/mmm:0199300405048900] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
|
|
32
|
5.1. Silicon. ACTA ACUST UNITED AC 1993. [DOI: 10.1016/s0076-695x(08)60010-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register]
|
|
33
|
Balents L, Kardar M. Roughening of anisotropically reconstructed surfaces and the Hubbard model. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:16031-16044. [PMID: 10003743 DOI: 10.1103/physrevb.46.16031] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
|
34
|
|
|
35
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Uwaha M. Kinematical binding transition of steps in a surface diffusion field. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:4364-4366. [PMID: 10004188 DOI: 10.1103/physrevb.46.4364] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
|
36
|
|
|
37
|
|
|
38
|
Wei J, Wang X, Goldberg JL, Bartelt NC, Williams ED. Step-height mixtures on vicinal Si(111) surfaces. PHYSICAL REVIEW LETTERS 1992; 68:3885-3888. [PMID: 10045829 DOI: 10.1103/physrevlett.68.3885] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
|
39
|
Tochihara H, Shimada W, Itoh M, Tanaka H, Udagawa M, Sumita I. Structure and restructuring of the atomic steps on Si(111)7 x 7. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:11332-11335. [PMID: 10001062 DOI: 10.1103/physrevb.45.11332] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
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40
|
Sieradzki K, Streitz FH. Elastic interactions of defects on (111) Au surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:11433-11436. [PMID: 10001089 DOI: 10.1103/physrevb.45.11433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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41
|
Uwaha M, Saito Y. Kinetic smoothing and roughening of a step with surface diffusion. PHYSICAL REVIEW LETTERS 1992; 68:224-227. [PMID: 10045567 DOI: 10.1103/physrevlett.68.224] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
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42
|
Frohn J, Giesen M, Poensgen M, Wolf JF, Ibach H. Attractive interaction between steps. PHYSICAL REVIEW LETTERS 1991; 67:3543-3546. [PMID: 10044762 DOI: 10.1103/physrevlett.67.3543] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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|
Bedrossian P, Klitsner T. Surface reconstruction in layer-by-layer sputtering of Si(111). PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:13783-13786. [PMID: 9999590 DOI: 10.1103/physrevb.44.13783] [Citation(s) in RCA: 45] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Yang Y, Trafas BM, Siefert RL, Weaver JH. GaAs(110) terrace-width distributions and kink formation. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:3218-3221. [PMID: 9999918 DOI: 10.1103/physrevb.44.3218] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
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|
Wei J, Wang X, Bartelt NC, Williams ED, Tung RT. The precipitation of kinks on stepped Si(111) surfaces. J Chem Phys 1991. [DOI: 10.1063/1.460070] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Joós B, Einstein TL, Bartelt NC. Distribution of terrace widths on a vicinal surface within the one-dimensional free-fermion model. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:8153-8162. [PMID: 9996440 DOI: 10.1103/physrevb.43.8153] [Citation(s) in RCA: 71] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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