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Cho S, Ma H, Xia W, Yang Y, Liu Z, Huang Z, Jiang Z, Lu X, Liu J, Liu Z, Li J, Wang J, Liu Y, Jia J, Guo Y, Liu J, Shen D. Emergence of New van Hove Singularities in the Charge Density Wave State of a Topological Kagome Metal RbV_{3}Sb_{5}. PHYSICAL REVIEW LETTERS 2021; 127:236401. [PMID: 34936772 DOI: 10.1103/physrevlett.127.236401] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2021] [Revised: 10/30/2021] [Accepted: 11/02/2021] [Indexed: 06/14/2023]
Abstract
Quantum materials with layered kagome structures have drawn considerable attention due to their unique lattice geometry, which gives rise to flat bands together with Dirac-like dispersions. Recently, vanadium-based materials with layered kagome structures were discovered to be topological metals, which exhibit charge density wave (CDW) properties, significant anomalous Hall effect, and unusual superconductivity at low temperatures. Here, we employ angle-resolved photoemission spectroscopy to investigate the electronic structure evolution upon the CDW transition in a vanadium-based kagome material RbV_{3}Sb_{5}. The CDW phase transition gives rise to a partial energy gap opening at the boundary of the Brillouin zone and, most importantly, the emergence of new van Hove singularities associated with large density of states, which are absent in the normal phase and might be related to the superconductivity observed at lower temperatures. Our work sheds light on the microscopic mechanisms for the formation of the CDW and superconducting states in these topological kagome metals.
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Affiliation(s)
- Soohyun Cho
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Haiyang Ma
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yichen Yang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhengtai Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhe Huang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhicheng Jiang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xiangle Lu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jishan Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhonghao Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Jinghui Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yi Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Jinfeng Jia
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Dawei Shen
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Mori R, Marshall PB, Ahadi K, Denlinger JD, Stemmer S, Lanzara A. Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface. Nat Commun 2019; 10:5534. [PMID: 31797932 PMCID: PMC6892806 DOI: 10.1038/s41467-019-13046-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2018] [Accepted: 10/16/2019] [Indexed: 11/10/2022] Open
Abstract
The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, \documentclass[12pt]{minimal}
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\begin{document}$${E}_{{\rm{F}}}$$\end{document}EF, is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases. A singularity in a material’s density of states at the Fermi energy can drive the formation of unconventional electronic phases. Here the authors show a Van Hove singularity is tunable across the Fermi energy in an oxide heterostructure, leading to enhanced electronic correlations.
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Affiliation(s)
- Ryo Mori
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.,Applied Science & Technology, University of California, Berkeley, CA, 94720, USA
| | - Patrick B Marshall
- Materials Department, University of California, Santa Barbara, CA, 93106-5050, USA
| | - Kaveh Ahadi
- Materials Department, University of California, Santa Barbara, CA, 93106-5050, USA
| | - Jonathan D Denlinger
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Susanne Stemmer
- Materials Department, University of California, Santa Barbara, CA, 93106-5050, USA
| | - Alessandra Lanzara
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. .,Department of Physics, University of California, Berkeley, CA, 94720, USA.
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Kim Y, Herlinger P, Moon P, Koshino M, Taniguchi T, Watanabe K, Smet JH. Charge Inversion and Topological Phase Transition at a Twist Angle Induced van Hove Singularity of Bilayer Graphene. NANO LETTERS 2016; 16:5053-5059. [PMID: 27387484 DOI: 10.1021/acs.nanolett.6b01906] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
van Hove singularities (VHS's) in the density of states play an outstanding and diverse role for the electronic and thermodynamic properties of crystalline solids. At the critical point the Fermi surface connectivity changes, and topological properties undergo a transition. Opportunities to systematically pass a VHS at the turn of a voltage knob and study its diverse impact are however rare. With the advent of van der Waals heterostructures, control over the atomic registry of neighboring graphene layers offers an unprecedented tool to generate a low energy VHS easily accessible with conventional gating. Here we have addressed magnetotransport when the chemical potential crosses the twist angle induced VHS in twisted bilayer graphene. A topological phase transition is experimentally disclosed in the abrupt conversion of electrons to holes or vice versa, a loss of a nonzero Berry phase and distinct sequences of integer quantum Hall states above and below the singularity.
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Affiliation(s)
- Youngwook Kim
- Max-Planck-Institut für Festköperforschung , 70569 Stuttgart, Germany
| | - Patrick Herlinger
- Max-Planck-Institut für Festköperforschung , 70569 Stuttgart, Germany
| | - Pilkyung Moon
- New York University , Shanghai 200120, China
- NYU-ECNU Institute of Physics at NYU Shanghai , Shanghai 200062, China
| | - Mikito Koshino
- Department of Physics, Tohoku University , Sendai 980-8578, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Jurgen H Smet
- Max-Planck-Institut für Festköperforschung , 70569 Stuttgart, Germany
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Yang Y, Fedorov G, Shafranjuk SE, Klapwijk TM, Cooper BK, Lewis RM, Lobb CJ, Barbara P. Electronic Transport and Possible Superconductivity at Van Hove Singularities in Carbon Nanotubes. NANO LETTERS 2015; 15:7859-7866. [PMID: 26506109 DOI: 10.1021/acs.nanolett.5b02564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.
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Affiliation(s)
- Y Yang
- Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States
| | - G Fedorov
- Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States
| | - S E Shafranjuk
- Department of Physics and Astronomy, Northwestern University , Evanston, Illinois 60208, United States
| | - T M Klapwijk
- Kavli Institute of Nanoscience, Delft University of Technology , 2600 GA Delft, The Netherlands
- Laboratory for Quantum Limited Devices, Physics Department, Moscow State Pedagogical University , 29 Malaya Pirogovskaya Street, Moscow, 119992, Russia
| | - B K Cooper
- Kavli Institute of Nanoscience, Delft University of Technology , 2600 GA Delft, The Netherlands
| | - R M Lewis
- Department of Physics, CNAM, and JQI , University of Maryland , College Park, Maryland 20742, United States
| | - C J Lobb
- Department of Physics, CNAM, and JQI , University of Maryland , College Park, Maryland 20742, United States
| | - P Barbara
- Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States
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Fotso H, Yang S, Chen K, Pathak S, Moreno J, Jarrell M, Mikelsons K, Khatami E, Galanakis D. Dynamical Cluster Approximation. SPRINGER SERIES IN SOLID-STATE SCIENCES 2012. [DOI: 10.1007/978-3-642-21831-6_9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
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McChesney JL, Bostwick A, Ohta T, Seyller T, Horn K, González J, Rotenberg E. Extended van Hove singularity and superconducting instability in doped graphene. PHYSICAL REVIEW LETTERS 2010; 104:136803. [PMID: 20481902 DOI: 10.1103/physrevlett.104.136803] [Citation(s) in RCA: 37] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2009] [Indexed: 05/14/2023]
Abstract
We have investigated the effects of doping on a single layer of graphene using angle-resolved photoemission spectroscopy. We show that many-body interactions severely warp the Fermi surface, leading to an extended van Hove singularity (EVHS) at the graphene M point. The ground state properties of graphene with such an EVHS are calculated, analyzing the competition between a magnetic instability and the tendency towards superconductivity. We find that the latter plays the dominant role as it is enhanced by the strong modulation of the interaction along the Fermi line, leading to an energy scale for the onset of the pairing instability as large as 1 meV when the Fermi energy is sufficiently close to the EVHS.
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Affiliation(s)
- J L McChesney
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, USA
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Adelung R, Brandt J, Rossnagel K, Seifarth O, Kipp L, Skibowski M, Ramírez C, Strasser T, Schattke W. Tuning dimensionality by nanowire adsorption on layered materials. PHYSICAL REVIEW LETTERS 2001; 86:1303-1306. [PMID: 11178069 DOI: 10.1103/physrevlett.86.1303] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2000] [Indexed: 05/23/2023]
Abstract
The dimensionality of electronic states determines a number of physical phenomena such as phase transitions, transport, or superconductivity. Employing scanning tunneling microscopy combined with angle-resolved photoemission spectroscopy we demonstrate how the dimensionality of electronic states can be continuously tuned from three to two dimensions. This is achieved by adsorption of nanowires on surfaces of layered crystals without changing the chemical composition of the material. Exemplary results for Rb nanowires on TiTe2 are discussed with the help of electronic structure calculations.
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Affiliation(s)
- R Adelung
- Institut für Experimentelle und Angewandte Physik, Universität Kiel, D-24098 Kiel, Germany
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Gonzalez J, Guinea F, Vozmediano MA. Kinematics of electrons near a van hove singularity. PHYSICAL REVIEW LETTERS 2000; 84:4930-4933. [PMID: 10990834 DOI: 10.1103/physrevlett.84.4930] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/1999] [Indexed: 05/23/2023]
Abstract
A two-dimensional electronic system, where the Fermi surface is close to a Van Hove singularity, shows a variety of weak coupling instabilities. It is a convenient model to study the interplay between antiferromagnetism and anisotropic superconductivity. We present a detailed analysis of the kinematics of electron scattering in this model. The similarities and differences between a standard renormalization group approach and previous work based on parquet summations of log (2) divergences are analyzed, with emphasis on the underlying physical processes. General properties of the phase diagram are discussed.
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Affiliation(s)
- J Gonzalez
- Instituto de Estructura de la Materia, Consejo Superior de Investigaciones Cientificas, Serrano 123, 28006 Madrid, Spain
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Lu DH, Schmidt M, Cummins TR, Schuppler S, Lichtenberg F, Bednorz JG. Fermi surface and extended van Hove singularity in the noncuprate superconductor Sr2RuO4. PHYSICAL REVIEW LETTERS 1996; 76:4845-4848. [PMID: 10061395 DOI: 10.1103/physrevlett.76.4845] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Yokoya T, Chainani A, Takahashi T, Katayama-Yoshida H, Kasai M, Tokura Y. Extended Van Hove singularity in a noncuprate layered superconductor Sr2RuO4. PHYSICAL REVIEW LETTERS 1996; 76:3009-3012. [PMID: 10060847 DOI: 10.1103/physrevlett.76.3009] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Abraham E, Barbour IM, Cullen PH, Klepfish EG, Pike ER, Sarkar S. Singularity of the density of states in the two-dimensional Hubbard model from finite-size scaling of Yang-Lee zeros. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7704-7713. [PMID: 9982214 DOI: 10.1103/physrevb.53.7704] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Puig-Puig L, López-Aguilar F. Electronic structure and superconductivity in strongly correlated systems in the pseudogap regime. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:17143-17152. [PMID: 9981140 DOI: 10.1103/physrevb.52.17143] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Yndurain F. Model for the variation upon doping of the isotope coefficient in high-Tc superconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:8494-8497. [PMID: 9977463 DOI: 10.1103/physrevb.51.8494] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Ma J, Quitmann C, Kelley RJ, Alméras P, Berger H, Margaritondo G, Onellion M. Observation of a van Hove singularity in Bi2Sr2CaCu2O8+x with angle-resolved photoemission. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:3832-3839. [PMID: 9979203 DOI: 10.1103/physrevb.51.3832] [Citation(s) in RCA: 32] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gofron K, Campuzano JC, Abrikosov AA, Lindroos M, Bansil A, Ding H, Koelling D, Dabrowski B. Observation of an "extended" Van Hove singularity in YBa2Cu4O8 by ultrahigh energy resolution angle-resolved photoemission. PHYSICAL REVIEW LETTERS 1994; 73:3302-3305. [PMID: 10057342 DOI: 10.1103/physrevlett.73.3302] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Radtke RJ, Norman MR. Relation of extended Van Hove singularities to high-temperature superconductivity within strong-coupling theory. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:9554-9560. [PMID: 9975009 DOI: 10.1103/physrevb.50.9554] [Citation(s) in RCA: 27] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Krishnamurthy HR, Newns DM, Pattnaik PC, Tsuei CC, Chi CC. Vertex correction to pairing at a Van Hove singularity. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:3520-3523. [PMID: 10011217 DOI: 10.1103/physrevb.49.3520] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Andersen OK, Jepsen O, Liechtenstein AI, Mazin II. Plane dimpling and saddle-point bifurcation in the band structures of optimally doped high-temperature superconductors: A tight-binding model. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:4145-4157. [PMID: 10011312 DOI: 10.1103/physrevb.49.4145] [Citation(s) in RCA: 84] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kim JH, Tesanovic Z. Effects of strong Coulomb correlations on the phonon-mediated superconductivity: A model inspired by Copper oxides. PHYSICAL REVIEW LETTERS 1993; 71:4218-4221. [PMID: 10055186 DOI: 10.1103/physrevlett.71.4218] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Kim JH, Vagner ID. Lattice effects on de Haas-van Alphen oscillations in strongly correlated systems. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:16564-16576. [PMID: 10008240 DOI: 10.1103/physrevb.48.16564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Getino JM, Rubio H. Properties of the gap energy in the van Hove scenario of high-temperature superconductivity. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:597-599. [PMID: 10006817 DOI: 10.1103/physrevb.48.597] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Starnberg HI, Brauer HE, Holleboom LJ, Hughes HP. 3D-to-2D transition by Cs intercalation of VSe2. PHYSICAL REVIEW LETTERS 1993; 70:3111-3114. [PMID: 10053778 DOI: 10.1103/physrevlett.70.3111] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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