Extraordinary Hall effect and giant magnetoresistance in the granular Co-Ag system

Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 ×  107 ℏ/2e  Ω⁻¹  m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

Giant Magnetoresistance Biosensors in Biomedical Applications

The giant magnetoresistance (GMR) effect has seen flourishing development from theory to application in the last three decades since its discovery in 1988. Nowadays, commercial devices based on the GMR effect, such as hard-disk drives, biosensors, magnetic field sensors, microelectromechanical systems (MEMS), etc., are available in the market, by virtue of the advances in state-of-the-art thin-film deposition and micro- and nanofabrication techniques. Different types of GMR biosensor arrays with superior sensitivity and robustness are available at a lower cost for a wide variety of biomedical applications. In this paper, we review the recent advances in GMR-based biomedical applications including disease diagnosis, genotyping, food and drug regulation, brain and cardiac mapping, etc. The GMR magnetic multilayer structure, spin valve, and magnetic granular structure, as well as fundamental theories of the GMR effect, are introduced at first. The emerging topic of flexible GMR for wearable biosensing is also included. Different GMR pattern designs, sensor surface functionalization, bioassay strategies, and on-chip accessories for improved GMR performances are reviewed. It is foreseen that combined with the state-of-the-art complementary metal-oxide-semiconductor (CMOS) electronics, GMR biosensors hold great promise in biomedicine, particularly for point-of-care (POC) disease diagnosis and wearable devices for real-time health monitoring.

Possible Routes to Obtain Enhanced Magnetoresistance in a Driven Quantum Heterostructure with a Quasi-Periodic Spacer

In this work, we perform a numerical study of magnetoresistance in a one-dimensional quantum heterostructure, where the change in electrical resistance is measured between parallel and antiparallel configurations of magnetic layers. This layered structure also incorporates a non-magnetic spacer, subjected to quasi-periodic potentials, which is centrally clamped between two ferromagnetic layers. The efficiency of the magnetoresistance is further tuned by injecting unpolarized light on top of the two sided magnetic layers. Modulating the characteristic properties of different layers, the value of magnetoresistance can be enhanced significantly. The site energies of the spacer is modified through the well-known Aubry-André and Harper (AAH) potential, and the hopping parameter of magnetic layers is renormalized due to light irradiation. We describe the Hamiltonian of the layered structure within a tight-binding (TB) framework and investigate the transport properties through this nanojunction following Green's function formalism. The Floquet-Bloch (FB) anstaz within the minimal coupling scheme is introduced to incorporate the effect of light irradiation in TB Hamiltonian. Several interesting features of magnetotransport properties are represented considering the interplay between cosine modulated site energies of the central region and the hopping integral of the magnetic regions that are subjected to light irradiation. Finally, the effect of temperature on magnetoresistance is also investigated to make the model more realistic and suitable for device designing. Our analysis is purely a numerical one, and it leads to some fundamental prescriptions of obtaining enhanced magnetoresistance in multilayered systems.

The sign reversal of anomalous Hall effect derived from the transformation of scattering effect in cluster-assembled Ni0.8Fe0.2 nanostructural films

Both surface and interface scattering induced a sign reversal of the anomalous Hall effect (AHE) in a few heterostructures. The sign reversal existing in a single substance can clarify the role of the surface scattering in the AHE. Here, cluster-assembled Ni0.8Fe0.2 single-substance films prepared by low-energy cluster beam deposition greatly improved the surface effect with cluster size below a characteristic size of 16.17 nm (dc) due to the high surface-to-volume ratio of the clusters and the loose structure of the films. The films presented a sign reversal of AHE and unusual transitional behavior in temperature- and size-dependent anomalous Hall resistivity with dc as the critical size. Interestingly, we also observed the sign reversal in the same film with a cluster size of dc by regulating the temperature. Based on the existing and modified scaling laws, we discovered the transformation between the bulk and surface scattering mechanisms and their coexistence, and both the sign reversal of AHE and the unusual transitional behaviors of anomalous Hall resistivity were attributed to the predominant scattering effects. Temperature- and size-dependent magnetoresistance (MR) also displayed a significant transformation at dc and further confirm the transitional mechanisms of AHE. This work provides an effective method for regulating AHE to promote its application in spintronic nano-devices.

Granular Hall Sensors for Scanning Probe Microscopy

Scanning Hall probe microscopy is attractive for minimally invasive characterization of magnetic thin films and nanostructures by measurement of the emanating magnetic stray field. Established sensor probes operating at room temperature employ highly miniaturized spin-valve elements or semimetals, such as Bi. As the sensor layer structures are fabricated by patterning of planar thin films, their adaption to custom-made sensor probe geometries is highly challenging or impossible. Here we show how nanogranular ferromagnetic Hall devices fabricated by the direct-write method of focused electron beam induced deposition (FEBID) can be tailor-made for any given probe geometry. Furthermore, we demonstrate how the magnetic stray field sensitivity can be optimized in situ directly after direct-write nanofabrication of the sensor element. First proof-of-principle results on the use of this novel scanning Hall sensor are shown.

Disorder-driven non-Fermi liquid behavior in itinerant ferromagnet α-Co5Ge3

The physical properties of itinerant ferromagnet [Formula: see text]-Co₅Ge₃ with both strong disorder and spin fluctuations was studied. The dc and ac susceptibility show that both spin fluctuations and disorder dominate the physical properties. In the spin glass phase, with a coexisting ferromagnetic state ([Formula: see text]30 K), both non-Fermi liquid behavior and large exponent of scaling relation of [Formula: see text] are observed and attributed to the spin fluctuations and disorder induced by cobalt defects. Upon the increase of external field, Fermi liquid behavior restores due to the suppression of spin fluctuations and disorder. In addition, a large anomalous Hall coefficient R _s is observed. Our results suggest that [Formula: see text]-Co₅Ge₃ is a typical itinerant ferromagnet to explore the interplay of disorder and spin fluctuations.

Tuneable Magneto-Resistance by Severe Plastic Deformation

Bulk metallic samples were synthesized from different binary powder mixtures consisting of elemental Cu, Co, and Fe using severe plastic deformation. Small particles of the ferromagnetic phase originate in the conductive Cu phase, either by incomplete dissolution or by segregation phenomena during the deformation process. These small particles are known to give rise to granular giant magneto-resistance. Taking advantage of the simple production process, it is possible to perform a systematic study on the influence of processing parameters and material compositions on the magneto-resistance. Furthermore, it is feasible to tune the magneto-resistive behavior as a function of the specimens’ chemical composition. It was found that specimens of low ferromagnetic content show an almost isotropic drop in resistance in a magnetic field. With increasing ferromagnetic content, percolating ferromagnetic phases cause an anisotropy of the magneto-resistance. By changing the parameters of the high pressure torsion process, i.e., sample size, deformation temperature, and strain rate, it is possible to tailor the magnitude of giant magneto-resistance. A decrease in room temperature resistivity of ~3.5% was found for a bulk specimen containing an approximately equiatomic fraction of Co and Cu.

Influence of free charge carrier density on the magnetic behavior of (Zn,Co)O thin film studied by Field Effect modulation of magnetotransport

The origin of (ferro)magnetic ordering in transition metal doped ZnO is a still open question. For applications it is fundamental to establish if it arises from magnetically ordered impurity clusters embedded into the semiconducting matrix or if it originates from ordering of magnetic ions dilute into the host lattice. In this latter case, a reciprocal effect of the magnetic exchange on the charge carriers is expected, offering many possibilities for spintronics applications. In this paper we report on the relationship between magnetic properties and free charge density investigated by using Zinc oxide based field effect transistors, in which the charge carrier density is modulated by more than 4 order of magnitude, from 1016 to 1020 e-/cm3. The magnetotransport properties are employed to probe the magnetic status of the channel both in pure and cobalt doped zinc oxide transistors. We find that it is widely possible to control the magnetic scattering rates by field effect. We believe that this finding is a consequence of the modulation of magnetization and carrier spin polarization by the electric field. The observed effects can be explained by the change in size of bound magnetic polarons that induces a percolation magnetic ordering in the sample.

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

We report the first results of functional properties of nitrogenized silver-permalloy thin films deposited on polyethylene terephthalic ester {PETE (C₁₀H₈O₄)_n} flexible substrates by magnetron sputtering. These new soft magnetic thin films have magnetization that is comparable to pure Ni₈₁Fe₁₉ permalloy films. Two target compositions (Ni₇₆Fe₁₉Ag₅ and Ni₇₂Fe₁₈Ag₁₀) were used to study the effect of compositional variation and sputtering parameters, including nitrogen flow rate on the phase evolution and surface properties. Aggregate flow rate and total pressure of Ar+N₂ mixture was 60 sccm and 0.55 Pa, respectively. The distance between target and the substrate was kept at 100 mm, while using sputtering power from 100–130 W. Average film deposition rate was confirmed at around 2.05 nm/min for argon atmosphere and was reduced to 1.8 nm/min in reactive nitrogen atmosphere. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, vibrating sample magnetometer, and contact angle measurements were used to characterize the functional properties. Nano sized character of films was confirmed by XRD and SEM. It is found that the grain size was reduced by the formation of nitride phase, which in turns enhanced the magnetization and lowers the coercivity. Magnetic field coupling efficiency limit was determined from 1.6–2 GHz frequency limit. The results of comparable magnetic performance, lowest magnetic loss, and highest surface free energy, confirming that 15 sccm nitrogen flow rate at 115 W is optimal for producing Ag-doped permalloy flexible thin films having excellent magnetic field coupling efficiency.

Size-dependent electrical transport properties in Co nanocluster-assembled granular films

A series of Co nanocluster-assembled films with cluster sizes ranging from 4.5 nm to 14.7 nm were prepared by the plasma-gas-condensation method. The size-dependent electrical transport properties were systematically investigated. Both of the longitudinal resistivity (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\rho }_{xx}$$\end{document}ρxx) and saturated anomalous Hall resistivity (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\rho }_{xy}^{A}$$\end{document}ρxyA) continuously increased with the decrease of the cluster sizes (d). The \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\rho }_{xx}$$\end{document}ρxx firstly increased and then decreased with increasing the temperature for all samples, which could be well described by involving the thermally fluctuation-induced tunneling (FIT) process and scattering. The tunneling effect was verified to result in the invalidation of classical anomalous Hall effect (AHE) scaling relation. After deducting the contribution from tunneling effect to \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\rho }_{xx}$$\end{document}ρxx, the AHE scaling relation between \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\rho }_{xy}^{A}$$\end{document}ρxyA and the scattering resistivity (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\rho }_{S}$$\end{document}ρS) by varying the temperature was reconstructed. The value of scaling exponent γ increased with increasing Co cluster sizes. The size dependence of γ might be qualitatively interpreted by the interface and surface-induced spin flip scattering. We also determined the scaling relation between \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\rho }_{xy}^{A}$$\end{document}ρxyA and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\rho }_{S}$$\end{document}ρS at 5 K by changing the Co cluster sizes, and a large value of γ = 3.6 was obtained which might be ascribed to the surface and interfacial scattering.

Spin Filtering in Epitaxial Spinel Films with Nanoscale Phase Separation

The coexistence of ferromagnetic metallic phase and antiferromagnetic insulating phase in nanoscaled inhomogeneous perovskite oxides accounts for the colossal magnetoresistance. Although the model of spin-polarized electron transport across antiphase boundaries has been commonly employed to account for large magnetoresistance (MR) in ferrites, the magnetic anomalies, the two magnetic phases and enhanced molecular moment, are still unresolved. We observed a sizable MR in epitaxial spinel films (NiCo₂O_4-δ) that is much larger than that commonly observed in spinel ferrites. Detailed analysis reveals that this MR can be attributed to phase separation, in which the perfect ferrimagnetic metallic phase and ferrimagnetic insulating phase coexist. The magnetic insulating phase plays an important role in spin filtering in these phase separated spinel oxides, leading to a sizable MR effect. A spin filtering model based on Zeeman effect and direct tunneling is developed to account for MR of the phase separated films.

Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications

The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors.

Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films

The scaling of the anomalous Hall effect in γ′-Fe₄N films is investigated systematically for the first time.

Enhanced anomalous Hall effect in Fe nanocluster assembled thin films

An enhanced anomalous Hall effect is observed in heterogeneous uniform Fe cluster assembled films with different film thicknesses (ta = 160-1200 nm) fabricated by a plasma-gas-condensation method. The anomalous Hall coefficient (Rs) at ta = 1200 nm reaches its maximum of 2.4 × 10(-8) Ω cm G(-1) at 300 K, which is almost four orders of magnitude larger than bulk Fe. The saturated Hall resistivity (ρ(A)xy) first increases and then decreases with the increase of temperature accompanied by a sign change from positive to negative. Analysis of the results revealed that ρ(A)xy decreases with increasing longitudinal resistivity (ρxx) on a double-logarithmic scale and obeys a new scaling relation of log(ρ(A)xy/ρxx) = a0 + b0 log ρxx.

Multifunctional composite core-shell nanoparticles

In this review paper, the state-of-the-art knowledge of the core-shell multifunctional nanoparticles (MNPs), especially with unique physiochemical properties, is presented. The synthesis methods were summarized from the aspects of both the advantages and the demerits. The core includes the inexpensive and easily oxidized metals and the noble shells include the relatively noble metals, carbon, silica, other oxides, and polymers. The properties including magnetic, optical, anti-corrosion and the surface chemistry of the NPs are thoroughly reviewed. The current status of the applications is reviewed with the detailed examples including the catalysis, giant magnetoresistance (GMR) sensing, electromagnetic interface shielding or microwave absorption, biomedical drug delivery, and the environmental remediation.

Enhanced magnetoresistance induced by spin transfer torque in granular films with a magnetic field

Spin-transfer torques (STT) provide a mechanism to alter the magnetic configurations of magnetic heterostructures, a result previously only achieved by an external magnetic field. In granular solids, we demonstrate a new form of STT effect that can be exploited to induce a large spin disorder when combined with a large magnetic field. We have obtained a very large magnetoresistance effect in excess of 400% at 4.2 K in a large magnetic field, the largest ever reported in any metallic systems. The STT characteristics of granular solids differ significantly from those of multilayers, showing no STT effect at low magnetic fields but prominent STT effects at high fields.