Observation of the gap and kinetic energy in a correlated insulator

Vanadium Oxide: Phase Diagrams, Structures, Synthesis, and Applications

Vanadium oxides with multioxidation states and various crystalline structures offer unique electrical, optical, optoelectronic and magnetic properties, which could be manipulated for various applications. For the past 30 years, significant efforts have been made to study the fundamental science and explore the potential for vanadium oxide materials in ion batteries, water splitting, smart windows, supercapacitors, sensors, and so on. This review focuses on the most recent progress in synthesis methods and applications of some thermodynamically stable and metastable vanadium oxides, including but not limited to V₂O₃, V₃O₅, VO₂, V₃O₇, V₂O₅, V₂O₂, V₆O₁₃, and V₄O₉. We begin with a tutorial on the phase diagram of the V-O system. The second part is a detailed review covering the crystal structure, the synthesis protocols, and the applications of each vanadium oxide, especially in batteries, catalysts, smart windows, and supercapacitors. We conclude with a brief perspective on how material and device improvements can address current deficiencies. This comprehensive review could accelerate the development of novel vanadium oxide structures in related applications.

Structural Properties and Magnetic Ground States of 100 Binary d-Metal Oxides Studied by Hybrid Density Functional Methods

d-metal oxides play a crucial role in numerous technological applications and show a great variety of magnetic properties. We have systematically investigated the structural properties, magnetic ground states, and fundamental electronic properties of 100 binary d-metal oxides using hybrid density functional methods and localized basis sets composed of Gaussian-type functions. The calculated properties are compared with experimental information in all cases where experimental data are available. The used PBE0 hybrid density functional method describes the structural properties of the studied d-metal oxides well, except in the case of molecular oxides with weak intermolecular forces between the molecular units. Empirical D3 dispersion correction does not improve the structural description of the molecular oxides. We provide a database of optimized geometries and magnetic ground states to facilitate future studies on the more complex properties of the binary d-metal oxides.

Binary and Ternary Vanadium Oxides: General Overview, Physical Properties, and Photochemical Processes for Environmental Applications

This review article is a comprehensive report on vanadium oxides which are interesting materials for environmental applications. Therefore, a general overview of vanadium and its related oxides are presented in the first two parts. Afterwards, the physical properties of binary and ternary vanadium oxides in single and mixed valence states are described such as their structural, optical, and electronic properties. Finally, the use of these vanadium oxides in photochemical processes for environmental applications is detailed, especially for the production of hydrogen by water splitting and the degradation of organic pollutants in water using photocatalytic and photo-Fenton processes. The scientific aim of such a review is to bring a comprehensive tool to understand the photochemical processes triggered by vanadium oxide based materials where the photo-induced properties are thoroughly discussed based on the detailed description of their intrinsic properties.

Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

The suitability of Ti as a band gap modifier for α-Ga₂O₃ was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti₂O₃ and Ga₂O₃. Films of (Ti,Ga)₂O₃ were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(Ti_xGa_1−x)₂O₃ films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% ≤ x ≤ 5.3%, the band gap energy varies by ∼270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on α-Ga₂O₃.

Novel high-pressure monoclinic metallic phase of V2O3

Vanadium sesquioxide, V2O3, is a prototypical metal-to-insulator system where, in temperature-dependent studies, the transition always coincides with a corundum-to-monoclinic structural transition. As a function of pressure, V2O3 follows the expected behavior of increased metallicity due to a larger bandwidth for pressures up to 12.5 GPa. Surprisingly, for higher pressures when the structure becomes unstable, the resistance starts to increase. Around 32.5 GPa at 300 K, we observe a novel pressure-induced corundum-to-monoclinic transition between two metallic phases, showing that the structural phase transition can be decoupled from the metal-insulator transition. Using x-ray Raman scattering, we find that screening effects, which are strong in the corundum phase, become weakened at high pressures. Theoretical calculations indicate that this can be related to a decrease in coherent quasiparticle strength, suggesting that the high-pressure phase is likely a critical correlated metal, on the verge of Mott-insulating behavior.

High throughput first-principles calculations of bixbyite oxides for TCO applications

We present a high-throughput computing scheme based on density functional theory (DFT) to generate a class of oxides and screen them with the aim of identifying those that might be electronically appropriate for transparent conducting oxide (TCO) applications.

Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam

The electrical resistance of single VO(2) nanobeams was measured while simultaneously mapping the domain structure with Raman spectroscopy to investigate the relationship between structural domain formation and the metal-insulator transition. With increasing temperature, the nanobeams transformed from the insulating monoclinic M(1) phase to a mixture of the Mott-insulating M(2) and metallic rutile phases. Domain fractions were used to extract the temperature dependent resistivity of the M(2) phase, which showed an activated behavior consistent with the expected Mott-Hubbard gap. Metallic monoclinic phases were also produced by direct injection of charge into devices, decoupling the Mott metal-insulator transition from the monoclinic to rutile structural phase transition.

Nanostructured VO2 photocatalysts for hydrogen production

Vanadium dioxide (VO(2)) is a well-known semiconductor material with a band gap of 0.7 eV, and is seldom used as a photocatalyst. We report here a new crystal structure for nanostructured VO(2), with body-centered-cubic (bcc) structure and a large optical band gap of approximately 2.7 eV, which surprisingly shows excellent photocatalytic activity in hydrogen production. The bcc VO(2) phase exhibited a high quantum efficiency of approximately 38.7% when synthesized as nanorods. Using films of the aligned VO(2) nanorods, the hydrogen production rate can be tuned by varying the incident angle of UV light on the films and reaches a high rate of 800 mmol/m(2)/h from a mixture of water and ethanol under UV light, at a power density of approximately 27 mW/cm(2), allowing possible commercial application of this material as photoassisted hydrogen generators.

Coherent peaks and minimal probing depth in photoemission spectroscopy of Mott-Hubbard systems

We have measured hard x-ray photoemission spectra of pure vanadium sesquioxide (V(2)O(3)) across its metal-insulator transition. We show that, in the metallic phase, a clear correlation exists between the shakedown satellites observed in the vanadium 2p and 3p core-level spectra and the coherent peak measured at the Fermi level. Comparing experimental results and dynamical mean-field theory calculations, we estimate the Hubbard energy U in V(2)O(3) (4.20+/-0.05 eV). From our bulk-sensitive photoemission spectra we infer the existence of a critical probing depth for investigating electronic properties in strongly correlated solids.

Orbital switching and the first-order insulator-metal transition in paramagnetic V2O3

The first-order metal-insulator transition (MIT) in paramagnetic V2O3 is studied within the ab initio scheme LDA+DMFT, which merges the local density approximation (LDA) with dynamical mean field theory (DMFT). With a fixed value of the Coulomb U=6.0 eV, we show how the abrupt pressure driven MIT is understood in a new picture: a pressure-induced decrease of the trigonal distortion within the strong correlation scenario (which is not obtained within LDA). We find good quantitative agreement with (i) switch of the orbital occupation of (a(1g),e(pi)(g1),e(pi)(g2)) and the spin state S=1 across the MIT, (ii) thermodynamics and dc resistivity, and (iii) the one-electron spectral function, within this new scenario.