Temperature and Intensity Dependence of Intersubband Relaxation Rates from Photovoltage and Absorption

Intersubband Relaxation in CdSe Colloidal Quantum Wells

The dynamics of intersubband relaxation are critical to quantum well technologies such as quantum cascade lasers and quantum well infrared photodetectors. Here, intersubband relaxation in CdSe colloidal quantum wells, or nanoplatelets, is studied via pump-push-probe transient spectroscopy. An initial interband pump pulse is followed by a secondary infrared push excitation, resonant with intersubband absorption, which promotes electrons from the first conduction band of the quantum well to the second conduction band. A probe pulse monitors subsequent electron cooling to the band edge of the quantum well. Using this technique, intersubband relaxation is studied as a function of critical variables such as colloidal quantum well size and thickness, surface ligand chemistry, temperature, and excitation pulse intensity. Larger quantum well sizes, judicious selection of surface ligand chemistry (e.g., thiolates), low temperatures, and elevated push pulse fluences slow intersubband relaxation. However, compared to resonant intraband relaxation in colloidal quantum dots (up to hundreds of picoseconds), intersubband relaxation in colloidal quantum wells is rapid (<1 ps) under all examined conditions. These experiments indicate that rapid relaxation is driven by both LO phonon and surface scattering. The short time scale of relaxation observed in these materials may hinder intersubband technologies such as mid-infrared detectors, although such rapid relaxation may prove valuable in optical switching.

All-THz pump-probe spectroscopy of the intersubband AC-Stark effect in a wide GaAs quantum well

We report the observation of the intersubband AC-Stark effect in a single wide GaAs/AlGaAs quantum well. In a three-level configuration, the n = 2 to n = 3 intersubband transition is resonantly pumped at 3.5 THz using a free-electron laser. The induced spectral changes are probed using THz time-domain spectroscopy with a broadband pulse extending up to 4 THz. We observe an Autler-Townes splitting at the 1 - 2 intersubband transition as well as an indication of a Mollow triplet at the 2 - 3 transition, both evidencing the dressed states. For longer delay times, a relaxation of the hot-electron system with a time constant of around 420 ps is measured.

Rabi flopping in a two-level system with a time-dependent energy renormalization: intersubband transitions in quantum wells

We obtain pulse-driven Rabi oscillations guided by a generalization of the rotating-wave approximation to include, in the optical-Bloch equations, two-level systems with a time-varying transition energy. We achieve this by using chirped pulses with the central frequency given by the time-varying transition energy. Using this approach, we predict Rabi oscillations in intersubband transitions in a two-subband n-type modulation-doped quantum well by taking into account the time-dependent intersubband energy-gap renormalization due to depolarization-shift effects. We obtain Rabi oscillations for jpi (j=0,1,2, ) pulses in the presence of dephasing.

Intersubband transport in quantum wells in strong magnetic fields mediated by single- and two-electron scattering

We show theoretically that in quantum wells subjected to a strong magnetic field the intersubband current peaks at magnetic field values, which reveal the underlying specific intersubband scattering mechanism. We have designed and grown a superlattice structure in which such current oscillations are clearly visible, and in which the transition from the purely single-electron to the mixed single- and two-electron scattering regimes can be observed by tuning the applied voltage bias. The measurements were conducted in ultrahigh magnetic fields (up to 45 T) to obtain the full spectrum of the current oscillations.

Dissipation of intersubband plasmons in wide quantum wells

This Letter reports detailed measurements of the dissipation times tau(d) of approximately 10 meV intersubband (ISB) plasmons, and of the (single-particle) transport lifetimes tau(mu), in a remotely doped 40 nm GaAs quantum well. Introduced here as the time for ISB plasmons to dissipate into other modes of the electron gas, tau(d) is deduced from the homogeneous ISB absorption linewidth, measured as a function of sheet concentration and perpendicular dc electric field. Modeling in this and the next Letter [C. A. Ullrich and G. Vignale, Phys. Rev. Lett. 87, 037402 (2001)] indicates that scattering from rough interfaces dominates tau(d), while scattering from ionized impurities dominates tau(mu).