Triggered single photons from a quantum dot

Colloidal Multi-Dot Nanorods

Colloidal nanorod heterostructures consisting of multiple quantum dots within a nanorod (n-DNRs, where n is the number of quantum dots within a nanorod) are synthesized with alternating segments of CdSe "dot" and CdS "rod" via solution heteroepitaxy. The reaction temperature, time dependent ripening, and asymmetry of the wurtzite lattice and the resulting anisotropy of surface ligand steric hindrance are exploited to vary the morphology of the growing quantum dot segments. The alternating CdSe and CdS growth steps can be easily repeated to increment the dot number in unidirectional or bidirectional growth regimes. As an initial exploration of electron occupation effects on their optical properties, asymmetric 2-DNRs consisting of two dots of different lengths and diameters are synthesized and are shown to exhibit a change in color and an unusual photoluminescence quantum yield increase upon photochemical doping.

Perfect single-photon sources

We introduce the gapped coherent state in the form of a single-photon source (SPS) that consists of uncorrelated photons as a background, except that we demand that no two photons can be closer in time than a time gap [Formula: see text]. While no obvious quantum mechanism is yet identified to produce exactly such a photon stream, a numerical simulation is easily achieved by first generating an uncorrelated (Poissonian) signal and then for each photon in the list, either adding such a time gap or removing all photons that are closer in time from each other than [Formula: see text]. We study the statistical properties of such a hypothetical signal, which exhibits counter-intuitive features. This provides a neat and natural connection between continuous-wave (stationary) and pulsed single-photon sources, with also a bearing on what it means for such sources to be perfect in terms of single-photon emission.

Ultranarrow Line Width Room-Temperature Single-Photon Source from Perovskite Quantum Dot Embedded in Optical Microcavity

Ultranarrow bandwidth single-photon sources operating at room-temperature are of vital importance for viable optical quantum technologies at scale, including quantum key distribution, cloud-based quantum information processing networks, and quantum metrology. Here we show a room-temperature ultranarrow bandwidth single-photon source generating single-mode photons at a rate of 5 MHz based on an inorganic CsPbI3 perovskite quantum dot embedded in a tunable open-access optical microcavity. When coupled to an optical cavity mode, the quantum dot room-temperature emission becomes single-mode, and the spectrum narrows down to just ∼1 nm. The low numerical aperture of the optical cavities enables efficient collection of high-purity single-mode single-photon emission at room-temperature, offering promising performance for photonic and quantum technology applications. We measure 94% pure single-photon emission in a single-mode under pulsed and continuous-wave (CW) excitation.

Dephasing by optical phonons in GaN defect single-photon emitters

Single-photon defect emitters (SPEs), especially those with magnetically and optically addressable spin states, in technologically mature wide bandgap semiconductors are attractive for realizing integrated platforms for quantum applications. Broadening of the zero phonon line (ZPL) caused by dephasing in solid state SPEs limits the indistinguishability of the emitted photons. Dephasing also limits the use of defect states in quantum information processing, sensing, and metrology. In most defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the dephasing rate and the resulting broadening of the ZPL with the temperature obeys a power law. GaN hosts bright and stable single-photon emitters in the 600-700 nm wavelength range with strong ZPLs even at room temperature. In this work, we study the temperature dependence of the ZPL spectra of GaN SPEs integrated with solid immersion lenses with the goal of understanding the relevant dephasing mechanisms. At temperatures below ~ 50 K, the ZPL lineshape is found to be Gaussian and the ZPL linewidth is temperature independent and dominated by spectral diffusion. Above ~ 50 K, the linewidth increases monotonically with the temperature and the lineshape evolves into a Lorentzian. Quite remarkably, the temperature dependence of the linewidth does not follow a power law. We propose a model in which dephasing caused by absorption/emission of optical phonons in an elastic Raman process determines the temperature dependence of the lineshape and the linewidth. Our model explains the temperature dependence of the ZPL linewidth and lineshape in the entire 10-270 K temperature range explored in this work. The ~ 19 meV optical phonon energy extracted by fitting the model to the data matches remarkably well the ~ 18 meV zone center energy of the lowest optical phonon band ([Formula: see text]) in GaN. Our work sheds light on the mechanisms responsible for linewidth broadening in GaN SPEs. Since a low energy optical phonon band ([Formula: see text]) is a feature of most group III-V nitrides with a wurtzite crystal structure, including hBN and AlN, we expect our proposed mechanism to play an important role in defect emitters in these materials as well.

Hybrid photon-phonon blockade

We describe a novel type of blockade in a hybrid mode generated by linear coupling of photonic and phononic modes. We refer to this effect as hybrid photon-phonon blockade and show how it can be generated and detected in a driven nonlinear optomechanical superconducting system. Thus, we study boson-number correlations in the photon, phonon, and hybrid modes in linearly coupled microwave and mechanical resonators with a superconducting qubit inserted in one of them. We find such system parameters for which we observe eight types of different combinations of either blockade or tunnelling effects (defined via the sub- and super-Poissonian statistics, respectively) for photons, phonons, and hybrid bosons. In particular, we find that the hybrid photon-phonon blockade can be generated by mixing the photonic and phononic modes which do not exhibit blockade.

Optical Transparency Induced by a Largely Purcell Enhanced Quantum Dot in a Polarization-Degenerate Cavity

Optically active spin systems coupled to photonic cavities with high cooperativity can generate strong light-matter interactions, a key ingredient in quantum networks. However, obtaining high cooperativities for quantum information processing often involves the use of photonic crystal cavities that feature a poor optical access from the free space, especially to circularly polarized light required for the coherent control of the spin. Here, we demonstrate coupling with a cooperativity as high as 8 of an InAs/GaAs quantum dot to a fabricated bullseye cavity that provides nearly degenerate and Gaussian polarization modes for efficient optical accessing. We observe spontaneous emission lifetimes of the quantum dot as short as 80 ps (an ∼15 Purcell enhancement) and a ∼80% transparency of light reflected from the cavity. Leveraging the induced transparency for photon switching while coherently controlling the quantum dot spin could contribute to ongoing efforts of establishing quantum networks.

Room-Temperature, Highly Pure Single-Photon Sources from All-Inorganic Lead Halide Perovskite Quantum Dots

Attaining pure single-photon emission is key for many quantum technologies, from optical quantum computing to quantum key distribution and quantum imaging. The past 20 years have seen the development of several solid-state quantum emitters, but most of them require highly sophisticated techniques (e.g., ultrahigh vacuum growth methods and cryostats for low-temperature operation). The system complexity may be significantly reduced by employing quantum emitters capable of working at room temperature. Here, we present a systematic study across ∼170 photostable single CsPbX3 (X: Br and I) colloidal quantum dots (QDs) of different sizes and compositions, unveiling that increasing quantum confinement is an effective strategy for maximizing single-photon purity due to the suppressed biexciton quantum yield. Leveraging the latter, we achieve 98% single-photon purity (g(2)(0) as low as 2%) from a cavity-free, nonresonantly excited single 6.6 nm CsPbI3 QDs, showcasing the great potential of CsPbX3 QDs as room-temperature highly pure single-photon sources for quantum technologies.

Tailoring solid-state single-photon sources with stimulated emissions

The coherent interaction of electromagnetic fields with solid-state two-level systems can yield deterministic quantum light sources for photonic quantum technologies. To date, the performance of semiconductor single-photon sources based on three-level systems is limited mainly due to a lack of high photon indistinguishability. Here we tailor the cavity-enhanced spontaneous emission from a ladder-type three-level system in a single epitaxial quantum dot through stimulated emission. After populating the biexciton (XX) of the quantum dot through two-photon resonant excitation, we use another laser pulse to selectively depopulate the XX state into an exciton (X) state with a predefined polarization. The stimulated XX-X emission modifies the X decay dynamics and improves the characteristics of a polarized single-photon source, such as a source brightness of 0.030(2), a single-photon purity of 0.998(1) and an indistinguishability of 0.926(4). Our method can be readily applied to existing quantum dot single-photon sources and expands the capabilities of three-level systems for advanced quantum photonic functionalities.

Double-Pulse Generation of Indistinguishable Single Photons with Optically Controlled Polarization

Single-photon sources play a key role in photonic quantum technologies. Semiconductor quantum dots can emit indistinguishable single photons under resonant excitation. However, the resonance fluorescence technique typically requires cross-polarization filtering, which causes a loss of the unpolarized quantum dot emission by 50%. To solve this problem, we demonstrate a method for generating indistinguishable single photons with optically controlled polarization by two laser pulses off-resonant with neutral exciton states. This scheme is realized by exciting the quantum dot to the biexciton state and subsequently driving the quantum dot to an exciton eigenstate. By combining with a magnetic field, we demonstrated the generation of photons with optically controlled polarization (the degree of polarization is 101(2)%), laser-neutral exciton detuning up to 0.81 meV, high single-photon purity (99.6(1)%), and indistinguishability (85(4)%). Laser pulses can be blocked using polarization and spectral filtering. Our work makes an important step toward indistinguishable single-photon sources with near-unity collection efficiency.

Transfer of correlations from photons to electron excitations and currents induced in semiconductor quantum wells by non-classical twisted light

In this paper the excitations of collective electronic modes and currents induced in nanostructured semiconductor systems by two-mode quantum light with non-zero orbital angular momenta are investigated. Transfer of photon correlations to the excitations and currents induced in the semiconductor system is demonstrated. Birth of correlated electrons arising in the conduction band of the nanostructure due to the interaction with correlated photons of quantum light is found. Azimuthal and radial spatial distributions of the entangled electrons are established. The obtained results make possible to register the correlated electrons experimentally and to implement quantum information and nanoelectronics circuits in nanosystems using the found azimuthal and radial electron entanglement.

Bright Purcell Enhanced Single-Photon Source in the Telecom O-Band Based on a Quantum Dot in a Circular Bragg Grating

The combination of semiconductor quantum dots with photonic cavities is a promising way to realize nonclassical light sources with state-of-the-art performances regarding brightness, indistinguishability, and repetition rate. Here we demonstrate the coupling of InGaAs/GaAs QDs emitting in the telecom O-band to a circular Bragg grating cavity. We demonstrate a broadband geometric extraction efficiency enhancement by investigating two emission lines under above-band excitation, inside and detuned from the cavity mode, respectively. In the first case, a Purcell enhancement of 4 is attained. For the latter case, an end-to-end brightness of 1.4% with a brightness at the first lens of 23% is achieved. Using p-shell pumping, a combination of high count rate with pure single-photon emission (g⁽²⁾(0) = 0.01 in saturation) is achieved. Finally, a good single-photon purity (g⁽²⁾(0) = 0.13) together with a high detector count rate of 191 kcps is demonstrated for a temperature of up to 77 K.

Accuracy of the Quantum Regression Theorem for Photon Emission from a Quantum Dot

The quantum regression theorem (QRT) is the most widely used tool for calculating multitime correlation functions for the assessment of quantum emitters. It is an approximate method based on a Markov assumption for environmental coupling. In this Letter we quantify properties of photons emitted from a single quantum dot coupled to phonons. For the single-photon purity and the indistinguishability, we compare numerically exact path-integral results with those obtained from the QRT. It is demonstrated that the QRT systematically overestimates the influence of the environment for typical quantum dots used in quantum information technology.

Very Robust Spray-Synthesized CsPbI3 Quantum Emitters with Ultrahigh Room-Temperature Cavity-Free Brightness and Self-Healing Ability

Although colloidal lead halide perovskite quantum dots (PQDs) exhibit desirable emitter characteristics with high quantum yields and narrow bandwidths, instability has limited their applications in devices. In this paper, we describe spray-synthesized CsPbI₃ PQD quantum emitters displaying strong photon antibunching and high brightness at room temperature and stable performance under continuous excitation with a high-intensity laser for more than 24 h. Our PQDs provided high single-photon emission rates, exceeding 9 × 10⁶ count/s, after excluding multiexciton emissions and strong photon antibunching, as confirmed by low values of the second-order correlation function g⁽²⁾(0) (reaching 0.021 and 0.061 for the best and average PQD performance, respectively). With such high brightness and stability, we applied our PQDs as quantum random number generators, which demonstrably passed all of the National Institute of Standards and Technology's randomness tests. Intriguingly, all of the PQDs exhibited self-healing behavior and restored their PL intensities to greater than half of their initial values after excitation at extremely high intensity. Half of the PQDs even recovered almost all of their initial PL intensity. The robust properties of these spray-synthesized PQDs resulted from high crystallinity and good ligand encapsulation. Our results suggest that spray-synthesized PQDs have great potential for use in future quantum technologies (e.g., quantum communication, quantum cryptography, and quantum computing).

Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature

Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room temperature from self-assembled strain-free GaAs quantum dots (QDs) in refilled AlGaAs nanoholes on (001)GaAs substrate. Two major obstacles for room temperature operation are observed. The first is a strong radiative background from the GaAs substrate and the second a significant loss of intensity by more than four orders of magnitude between liquid helium and room temperature. We discuss results obtained on three different sample designs and two excitation wavelengths. The PL measurements are performed at room temperature and at T = 200 K, which is obtained using an inexpensive thermoelectric cooler. An optimized sample with an AlGaAs barrier layer thicker than the penetration depth of the exciting green laser light (532 nm) demonstrates clear QD peaks already at room temperature. Samples with thin AlGaAs layers show room temperature emission from the QDs when a blue laser (405 nm) with a reduced optical penetration depth is used for excitation. A model and a fit to the experimental behavior identify dissociation of excitons in the barrier below T = 100 K and thermal escape of excitons from QDs above T = 160 K as the central processes causing PL-intensity loss.

Tuning radiative lifetimes in semiconductor quantum dots

Photonic devices stand to benefit from the development of chromophores with tunable, precisely controlled spontaneous emission lifetimes. Here, we demonstrate a method to continuously tune the radiative emission lifetimes of a class of chromophores by varying the density of electronic states involved in the emission process. In particular, we examined the peculiar composition-dependent electronic structure of copper doped CdZnSe quantum dots. It is shown that the nature and density of electronic states involved with the emission process is a function of copper inclusion level, providing a very direct handle for controlling the spontaneous lifetimes. The spontaneous emission lifetimes are estimated by examining the ratios of emission lifetimes to absolute quantum yields and also measured directly by ultrafast luminescence upconversion experiments. We find excellent agreement between these classes of experiments. This scheme enables us to tune spontaneous emission lifetimes by three orders of magnitude from ∼15 ns to over ∼7 µs, which is unprecedented in existing lumophores.

1GHz clocked distribution of electrically generated entangled photon pairs

Quantum networks are essential for realising distributed quantum computation and quantum communication. Entangled photons are a key resource, with applications such as quantum key distribution, quantum relays, and quantum repeaters. All components integrated in a quantum network must be synchronised and therefore comply with a certain clock frequency. In quantum key distribution, the most mature technology, clock rates have reached and exceeded 1GHz. Here we show the first electrically pulsed sub-Poissonian entangled photon source compatible with existing fiber networks operating at this clock rate. The entangled LED is based on InAs/InP quantum dots emitting in the main telecom window, with a multi-photon probability of less than 10% per emission cycle and a maximum entanglement fidelity of 89%. We use this device to demonstrate GHz clocked distribution of entangled qubits over an installed fiber network between two points 4.6km apart.

Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer

Contrary to simplified theoretical models, atomistic calculations presented here reveal that sufficiently large in-plane shape elongation of quantum dots can not only decrease, but even reverse the splitting of the two lowest optically active excitonic states. Such a surprising cancellation of bright-exciton splitting occurs for shape-anisotropic nanostructures with realistic elongation ratios, yet without a wetting layer, which plays here a vital role. However, this non-trivial effect due to shape-elongation is strongly diminished by alloy randomness resulting from intermixing of InAs quantum-dot material with the surrounding InP matrix. Alloying randomizes, and to some degree flattens the shape dependence of fine-structure splitting giving a practical justification for the application of simplified theories. Finally, we find that the dark-exciton spectra are rather weakly affected by alloying and are dominated by the effects of lateral elongation.

Single-photon emitters in hexagonal boron nitride: a review of progress

This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.

Superior properties in room-temperature colloidal-dot quantum emitters revealed by ultralow-dark-count detections of temporally-purified single photons

The realization of high-quality quantum emitters that can operate at room temperature is important for accelerating the application of quantum technologies, such as quantum communication, quantum information processing, and quantum metrology. In this work, we study the photon-antibunching properties on room-temperature emission from individual colloidal quantum dots (CQDs) using superconducting-nanowire single-photon detectors and temporal filtering of the photoluminescence decay curve. We find that high single-photon purities and high photon-generation rates can be simultaneously achieved by removing the signals originating from the sequential two-photon emission of biexcitons created by multiple excitation pulses. We successfully demonstrate that the ultrahigh performance of the room-temperature single-photon sources showing g⁽²⁾(0) ≪ 10⁻² can be confirmed by the ultralow-dark-count detection of the temporally purified single photons. These findings provide strong evidence for the attractiveness of CQDs as candidates for high-quality room-temperature quantum light sources.

Emission-Frequency Separated High Quality Single-Photon Sources Enabled by Phonons

We demonstrate theoretically that the single-photon purity of photons emitted from a quantum dot exciton prepared by phonon-assisted off-resonant excitation can be significantly higher in a wide range of parameters than that obtained by resonant preparation for otherwise identical conditions. Despite the off-resonant excitation, the brightness stays on a high level. These surprising findings exploit the fact that the phonon-assisted preparation is a two-step process where phonons first lead to a relaxation between laser-dressed states while high exciton occupations are reached only with a delay to the laser pulse maximum by adiabatically undressing the dot states. Due to this delay, possible subsequent processes, in particular multiphoton excitations, appear at a time when the laser pulse is almost gone. The resulting suppression of reexcitation processes increases the single-photon purity. Due to the spectral separation of the signal photons from the laser frequencies this enables the emission of high quality single photons not disturbed by a laser background while taking advantage of the robustness of the phonon assisted scheme.

Photoluminescence Intensity Fluctuations and Temperature-Dependent Decay Dynamics of Individual Carbon Nanotube sp3 Defects

Recent demonstration of room temperature, telecommunication wavelength single photon generation by sp³ defects of single wall carbon nanotubes established these defects as a new class of quantum materials. However, their practical utilization in development of quantum light sources calls for a significant improvement in their imperfect quantum yield (QY∼10-30%). PL intensity fluctuations observed with some defects also need to be eliminated. Aiming toward attaining fundamental understanding necessary for addressing these critical issues, we investigate PL intensity fluctuation and PL decay dynamics of aryl sp³ defects of (6,5), (7,5), and (10,3) single wall carbon nanotubes (SWCNTs) at temperatures ranging from 300 to 4 K. By correlating defect-state PL intensity fluctuations with change (or lack of change) in PL decay dynamics, we identified random variations in the trapping efficiency of E₁₁ band-edge excitons (likely resulting from the existence of a fluctuating potential barrier in the vicinity of the defect) as the mechanism mainly responsible for the defect PL intensity fluctuations. Furthermore, by analyzing the temperature dependence of PL intensity and decay dynamics of individual defects based on a kinetic model involving the trapping and detrapping of excitons by optically allowed and forbidden (bright and dark) defect states, we estimate the height of the potential barrier to be in the 3-22 meV range. Our analysis also provides further confirmation of recent DFT simulation results that the emissive sp³ defect state is accompanied by an energetically higher-lying optically forbidden (dark) exciton state.

Complementary cathodoluminescence lifetime imaging configurations in a scanning electron microscope

Cathodoluminescence (CL) spectroscopy provides a powerful way to characterize optical properties of materials with deep-subwavelength spatial resolution. While CL imaging to obtain optical spectra is a well-developed technology, imaging CL lifetimes with nanoscale resolution has only been explored in a few studies. In this paper we compare three different time-resolved CL techniques and compare their characteristics. Two configurations are based on the acquisition of CL decay traces using a pulsed electron beam that is generated either with an ultra-fast beam blanker, which is placed in the electron column, or by photoemission from a laser-driven electron cathode. The third configuration uses measurements of the autocorrelation function g⁽²⁾ of the CL signal using either a continuous or a pulsed electron beam. The three techniques are compared in terms of complexity of implementation, spatial and temporal resolution, and measurement accuracy as a function of electron dose. A single sample of InGaN/GaN quantum wells is investigated to enable a direct comparison of lifetime measurement characteristics of the three techniques. The g⁽²⁾-based method provides decay measurements at the best spatial resolution, as it leaves the electron column configuration unaffected. The pulsed-beam methods provide better detail on the temporal excitation and decay dynamics. The ultra-fast blanker configuration delivers electron pulses as short as 30 ps at 5 keV and 250 ps at 30 keV. The repetition rate can be chosen arbitrarily up to 80 MHz and requires a conjugate plane geometry in the electron column that reduces the spatial resolution in our microscope. The photoemission configuration, pumped with 250 fs 257 nm pulses at a repetition rate from 10 kHz to 25 MHz, allows creation of electron pulses down to a few ps, with some loss in spatial resolution.

Quantum-optical spectroscopy of a two-level system using an electrically driven micropillar laser as a resonant excitation source

Two-level emitters are the main building blocks of photonic quantum technologies and are model systems for the exploration of quantum optics in the solid state. Most interesting is the strict resonant excitation of such emitters to control their occupation coherently and to generate close to ideal quantum light, which is of utmost importance for applications in photonic quantum technology. To date, the approaches and experiments in this field have been performed exclusively using bulky lasers, which hinders the application of resonantly driven two-level emitters in compact photonic quantum systems. Here we address this issue and present a concept for a compact resonantly driven single-photon source by performing quantum-optical spectroscopy of a two-level system using a compact high-β microlaser as the excitation source. The two-level system is based on a semiconductor quantum dot (QD), which is excited resonantly by a fiber-coupled electrically driven micropillar laser. We dress the excitonic state of the QD under continuous wave excitation, and trigger the emission of single photons with strong multi-photon suppression (g ( 2 ) ( 0 ) = 0.02 ) and high photon indistinguishability (V = 57±9%) via pulsed resonant excitation at 156 MHz. These results clearly demonstrate the high potential of our resonant excitation scheme, which can pave the way for compact electrically driven quantum light sources with excellent quantum properties to enable the implementation of advanced quantum communication protocols.

Nonlinear Optics with 2D Layered Materials

2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.

Room-temperature single-photon emitters in titanium dioxide optical defects

Fluorescence properties of crystallographic point defects within different morphologies of titanium dioxide were investigated. For the first time, room-temperature single-photon emission in titanium dioxide optical defects was discovered in thin films and commercial nanoparticles. Three-level defects were identified because the g(2) correlation data featured prominent shoulders around the antibunching dip. Stable and blinking photodynamics were observed for the single-photon emitters. These results reveal a new room-temperature single-photon source within a wide bandgap semiconductor.

Tuning and Switching a Plasmonic Quantum Dot "Sandwich" in a Nematic Line Defect

We study the quantum-mechanical effects arising in a single semiconductor core/shell quantum dot (QD) controllably sandwiched between two plasmonic nanorods. Control over the position and the "sandwich" confinement structure is achieved by the use of a linear-trap liquid crystal (LC) line defect and laser tweezers that "push" the sandwich together. This arrangement allows for the study of exciton-plasmon interactions in a single structure, unaltered by ensemble effects or the complexity of dielectric interfaces. We demonstrate the effect of plasmonic confinement on the photon antibunching behavior of the QD and its luminescence lifetime. The QD behaves as a single emitter when nanorods are far away from the QD but shows possible multiexciton emission and a significantly decreased lifetime when tightly confined in a plasmonic "sandwich". These findings demonstrate that LC defects, combined with laser tweezers, enable a versatile platform to study plasmonic coupling phenomena in a nanoscale laboratory, where all elements can be arranged almost at will.

Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot

We report on the experimental demonstration of triggered single-photon emission at the telecom O-band from In(Ga)As/GaAs quantum dots (QDs) grown by metal-organic vapor-phase epitaxy. Micro-photoluminescence excitation experiments allowed us to identify the p-shell excitonic states in agreement with high excitation photoluminescence on the ensemble of QDs. Hereby we drive an O-band-emitting GaAs-based QD into the p-shell states to get a triggered single photon source of high purity. Applying pulsed p-shell resonant excitation results in strong suppression of multiphoton events evidenced by the as measured value of the second-order correlation function at zero delay of 0.03 (and ~0.005 after background correction).

Purification of Single Photons from Room-Temperature Quantum Dots

Single photon emitters are indispensable to photonic quantum technologies. Here, we demonstrate waveform-controlled high-purity single photons from room-temperature colloidal quantum dots. The purity of the single photons does not vary with the excitation power, thereby allowing the generation rate to be increased without compromising the single-photon quality.

Dynamic spontaneous emission control of an optical emitter coupled to plasmons in strained graphene

Spontaneous emission control of an optical emitter is critical for many applications, such as in the fields of sensing, integrated photonics and quantum optics. Integrating optical emitters with a mechanical system can provide an avenue for strain sensors as well. Here, the dynamic spontaneous emission modification of an emitter coupled to graphene by uniaxial strain is demonstrated. Our results show that the emission rate can be controlled by tuning the strain of graphene, which depends on the polarized orientation of the emitter. More specifically, the decay rate can be enhanced for several times if the emitter is polarized perpendicular to graphene under strain. Azimuthal angle dependent oscillation of decay rate exists for the emitter polarized parallel to the graphene. Moreover, the controllable decay of the emitter comes from the anisotropic plasmons excitation in strained graphene, which is verified by the corresponding isofrequency contours of plasmons. The strain engineering provides a new platform for dynamic spontaneous emission modulation of emitters coupled with graphene, which opens up intriguing possibilities for the design of strain sensors and quantum devices.

Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability

In strained heteroepitaxy, two-dimensional layers can exhibit a critical thickness at which three-dimensional islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a morphological phase transition can be induced on demand using surfactants. We explore Bi as a surfactant in the growth of InAs on GaAs(110), and find that the presence of surface Bi induces Stranski-Krastanov growth of 3D islands, while growth without Bi always favors 2D layer formation. Exposing a static two monolayer thick InAs layer to Bi rapidly transforms the layer into 3D islands. Density functional theory calculations reveal that Bi as well as Sb reduce the energetic cost of 3D island formation by modifying surface energies. These 3D nanostructures behave as optically active quantum dots. This work illustrates how surfactants can enable quantum dot self-assembly where it otherwise would not occur.

Measurement of magic-wavelength optical dipole trap by using the laser-induced fluorescence spectra of trapped single cesium atoms

Based on the multi-level model, we have calculated light shifts for Zeeman states of hyperfine levels of cesium (Cs) 6S_1/2 ground state and 6P_3/2 excited state. The magic-wavelength linearly-polarized optical dipole trap (ODT) for Cs 6S_1/2 |F = 4, m_F = + 4ñ - 6P_3/2 |F^' = 5, m_F = + 5ñ transition is experimentally constructed and characterized by using the laser-induced fluorescence spectra of trapped single Cs atoms. The magic wavelength is 937.7 nm which produces almost the same light shift for 6S_1/2 |F = 4, m_F = + 4ñ ground state and 6P_3/2 |F^' = 5, m_F = + 5ñ excited state with linearly-polarized ODT laser beam. Compared to undisturbed Cs 6S_1/2 |F = 4, m_F = + 4ñ - 6P_3/2 |F^' = 5, m_F = + 5ñ transition frequency in free space, the differential light shift is less than 0.7 MHz in a linearly-polarized 937.7 nm ODT, which is less than 1.2% of the trap depth. We also discussed influence of the trap depth and the bias magnetic field on the measurement results.

Excitonic complexes in GaN/(Al,Ga)N quantum dots

Here we report a theoretical investigation of excitonic complexes in polar GaN/(Al,Ga)N quantum dots (QDs). A sum rule between the binding energies of charged excitons is used to calculate the biexciton binding energy. The binding energies of excitonic complexes in GaN/AlN are shown to be strongly correlated to the QD size. Due to the large hole localization, the positively charged exciton energy is found to be always blueshifted compared to the exciton one. The negatively charged exciton and the biexciton energy can be blueshifted or redshifted according to the QD size. Increasing the size of GaN/AlN QDs makes the identification of charged excitons difficult, and the use of an Al_0.5Ga_0.5N barrier can be advantageous for clear identification. Our theoretical results for the binding energy of exciton complexes are also confronted with values deduced experimentally for InAs/GaAs QDs, confirming our theoretical prediction for charged excitonic complexes in GaN/(Al,Ga)N QDs. Finally, we realize that the trends of excitonic complexes in QDs are significantly related to competition between the local charge separation (whatever its origin) and the correlation effect. Following our findings, entangled photons pairs can be produced in QDs with careful control of their size in order to obtain zero exciton-biexciton energy separation.

Efficient fiber-coupled single-photon source based on quantum dots in a photonic-crystal waveguide

Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupler is recorded first on an independent device containing an on-chip reflector. Reflection measurements establish that the chip-to-fiber coupling efficiency exceeds 80 %. The detailed characterization of a high-efficiency photonic-crystal waveguide extended with a tapered out-coupling section is then performed. The corresponding overall single-photon source efficiency is 10.9 % ± 2.3 %, which quantifies the success probability to prepare an exciton in the quantum dot, couple it out as a photon in the waveguide, and subsequently transfer it to the fiber. The applied out-coupling method is robust, stable over time, and broadband over several tens of nanometers, which makes it a highly promising pathway to increase the efficiency and reliability of planar chip-based single-photon sources.

Polarization-Dependent Interference of Coherent Scattering from Orthogonal Dipole Moments of a Resonantly Excited Quantum Dot

Resonant photoluminescence excitation (RPLE) spectra of a neutral InGaAs quantum dot show unconventional line shapes that depend on the detection polarization. We characterize this phenomenon by performing polarization-dependent RPLE measurements and simulating the measured spectra with a three-level quantum model. The spectra are explained by interference between fields coherently scattered from the two fine structure split exciton states, and the measurements enable extraction of the steady-state coherence between the two exciton states.

Generation of four-photon polarization entangled decoherence-free states with cross-Kerr nonlinearity

We propose a theoretical protocol for preparing four-photon polarization entangled decoherence-free states, which are immune to the collective noise. With the assistance of the cross-Kerr nonlinearities, a two-photon spatial entanglement gate, two controlled-NOT gates, a four-photon polarization entanglement gate are inserted into the circuit, where X homodyne measurements are aptly applied. Combined with some swap gates and simple linear optical elements, four-photon polarization entangled decoherence-free states which can be utilized to represent two logical qubits, |0〉L and |1〉L are achieved at the output ports of the circuit. This generation scheme may be implemented with current experimental techniques.

Scattering of nanowire surface plasmons coupled to quantum dots with azimuthal angle difference

Coherent scatterings of surface plasmons coupled to quantun dots have attracted great attention in plasmonics. Recently, an experiment has shown that the quantum dots located nearby a nanowire can be separated not only in distance, but also an angle ϕ along the cylindrical direction. Here, by using the real-space Hamiltonian and the transfer matrix method, we analytically obtain the transmission/reflection spectra of nanowire surface plasmons coupled to quantum dots with an azimuthal angle difference. We find that the scattering spectra can show completely different features due to different positions and azimuthal angles of the quantum dots. When additionally coupling a cavity to the dots, we obtain the Fano-like line shape in the transmission and reflection spectra due to the interference between the localized and delocalized modes.

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al_0.48In_0.52As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k·p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 μeV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g⁽²⁾-values as low as gcw(2)(0)=0.05-0.05+0.17 for continuous wave (cw) excitation and gpulsed,  corr.(2)=0.24±0.02 for pulsed excitation.

Near-Transform-Limited Single Photons from an Efficient Solid-State Quantum Emitter

By pulsed s-shell resonant excitation of a single quantum dot-micropillar system, we generate long streams of 1000 near-transform-limited single photons with high mutual indistinguishability. The Hong-Ou-Mandel interference of two photons is measured as a function of their emission time separation varying from 13 ns to 14.7  μs, where the visibility slightly drops from 95.9(2)% to a plateau of 92.1(5)% through a slow dephasing process occurring at a time scale of 0.7  μs. A temporal and spectral analysis reveals the pulsed resonance fluorescence single photons are close to the transform limit, which are readily useful for multiphoton entanglement and interferometry experiments.

Design for an efficient single photon source based on a single quantum dot embedded in a parabolic solid immersion lens

We have designed a single photon emitter based on a single quantum dot embedded within a single mode parabolic solid immersion lens (pSIL) and a capping low-index pSIL. Numerical simulations predicted that the emitter performance should exhibit a high photon collection efficiency with excellent far-field emission properties, broadband operation, and good tolerance in its geometric (spatial configuration) parameters. Good geometric tolerance in a single-mode pSIL without yielding significant losses in the photon collection efficiency is advantageous for device fabrication. The low-index top pSIL layer provided this structure with a high photon collection efficiency, even in the case of a small numerical aperture (NA). Photon collection efficiencies of 64% and 78% were expected for NA values of 0.41 and 0.5, respectively. In addition to the benefits listed above, our combined pSIL design provided excellent broadband performance in a 100 nm range.

Highly Directional Room-Temperature Single Photon Device

One of the most important challenges in modern quantum optical applications is the demonstration of efficient, scalable, on-chip single photon sources, which can operate at room temperature. In this paper we demonstrate a room-temperature single photon source based on a single colloidal nanocrystal quantum dot positioned inside a circular bulls-eye shaped hybrid metal-dielectric nanoantenna. Experimental results show that 20% of the photons are emitted into a very low numerical aperture (NA < 0.25), a 20-fold improvement over a free-standing quantum dot, and with a probability of more than 70% for a single photon emission. With an NA = 0.65 more than 35% of the single photon emission is collected. The single photon purity is limited only by emission from the metal, an obstacle that can be bypassed with careful design and fabrication. The concept presented here can be extended to many other types of quantum emitters. Such a device paves a promising route for a high purity, high efficiency, on-chip single photon source operating at room temperature.

Modelling exciton-phonon interactions in optically driven quantum dots

We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions, intrinsic properties of the QD sample, and its temperature. We describe several techniques, which include weak-coupling master equations that are perturbative in the exciton-phonon coupling, as well as those based on the polaron transformation that can remain valid for strong phonon interactions. We additionally consider the role of phonons in altering the optical emission characteristics of quantum dot devices, outlining how we must modify standard quantum optics treatments to account for the presence of the solid-state environment.

Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures

Colloidal semiconductor nanocrystals become increasingly important in materials science and technology, due to their optoelectronic properties that are tunable by size. The measurement and understanding of their energy levels is key to scientific and technological progress. Here we review how the confined electronic orbitals and related energy levels of individual semiconductor quantum dots have been measured by means of scanning tunneling microscopy and spectroscopy. These techniques were originally developed for flat conducting surfaces, but they have been adapted to investigate the atomic and electronic structure of semiconductor quantum dots. We compare the results obtained on colloidal quantum dots with those on comparable solid-state ones. We also compare the results obtained with scanning tunneling spectroscopy with those of optical spectroscopy. The first three sections provide an introduction to colloidal quantum dots, and a theoretical basis to be able to understand tunneling spectroscopy on dots attached to a conducting surface. In sections 4 and 5 , we review the work performed on lead-chalcogenide nanocrystals and on colloidal quantum dots and rods of II-VI compounds, respectively. In section 6 , we deal with colloidal III-V nanocrystals and compare the results with their self-assembled counter parts. In section 7 , we review the work on other types of semiconductor quantum dots, especially on Si and Ge nanocrystals.

Polarization Spectroscopy of Defect-Based Single Photon Sources in ZnO

Point defects in wide bandgap semiconductors are promising candidates for future applications that necessitate quantum light sources. Recently, defect-based single photon sources have been observed in ZnO that are very bright and remain photoactive from 4.5 K to room temperature. Despite several investigations, the structure and electronic states of these emitters remain unknown. In this work, we establish a procedure to distinguish a Z dipole from an XY dipole when studying quantum emitters that are randomly oriented. Our cryogenic and room temperature polarization measurements collectively establish that these unidentified ZnO quantum emitters have a Z dipole. We show that the associated absorption and emission dipoles are parallel within experimental uncertainty for all 32 individuals studied. Additionally, we apply group theory and find that, assuming the defect symmetry belongs to a point group relevant to the ZnO wurtzite lattice, the ground and excited states are orbital singlets. These results are a significant step in identifying the structure and electronic states of defect-based single photon sources in ZnO.

On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar

Scalable photonic quantum technologies require on-demand single-photon sources with simultaneously high levels of purity, indistinguishability, and efficiency. These key features, however, have only been demonstrated separately in previous experiments. Here, by s-shell pulsed resonant excitation of a Purcell-enhanced quantum dot-micropillar system, we deterministically generate resonance fluorescence single photons which, at π pulse excitation, have an extraction efficiency of 66%, single-photon purity of 99.1%, and photon indistinguishability of 98.5%. Such a single-photon source for the first time combines the features of high efficiency and near-perfect levels of purity and indistinguishabilty, and thus opens the way to multiphoton experiments with semiconductor quantum dots.

Toward optical quantum information processing with quantum dots coupled to microstructures [Invited]

Major improvements have been made on semiconductor quantum dot light sources recently and now they can be seen as a serious candidate for near-future scalable photonic quantum information processing experiments. The three key parameters of these photon sources for such applications have been pushed to extreme values: almost unity single-photon purity and photon indistinguishability, and high brightness. In this paper, we review the progress achieved recently on quantum-dot-based single-photon sources. We also review some quantum information experiments where entanglement processes are achieved using semiconductor quantum dots.

Deterministic generation of bright single resonance fluorescence photons from a Purcell-enhanced quantum dot-micropillar system

We report on the observation of bright emission of single photons under pulsed resonance fluorescence conditions from a single quantum dot (QD) in a micropillar cavity. The brightness of the QD fluorescence is greatly enhanced via the coupling to the fundamental mode of a micropillar, allowing us to determine a single photon extraction efficiency of (20.7 ± 0.8) % per linear polarization basis. This yields an overall extraction efficiency of (41.4 ± 1.5) % in our device. We observe the first Rabi-oscillation in a weakly coupled quantum dot-micropillar system under coherent pulsed optical excitation, which enables us to deterministically populate the excited QD state. In this configuration, we probe the single photon statistics of the device yielding g(2)(0) = 0.072 ± 0.011 at a QD-cavity detuning of 75 μeV.

Room Temperature Single-Photon Emission from Individual Perovskite Quantum Dots

Lead-halide-based perovskites have been the subject of numerous recent studies largely motivated by their exceptional performance in solar cells. Electronic and optical properties of these materials have been commonly controlled by varying the composition (e.g., the halide component) and/or crystal structure. Use of nanostructured forms of perovskites can provide additional means for tailoring their functionalities via effects of quantum confinement and wave function engineering. Furthermore, it may enable applications that explicitly rely on the quantum nature of electronic excitations. Here, we demonstrate that CsPbX3 quantum dots (X = I, Br) can serve as room-temperature sources of quantum light, as indicated by strong photon antibunching detected in single-dot photoluminescence measurements. We explain this observation by the presence of fast nonradiative Auger recombination, which renders multiexciton states virtually nonemissive and limits the fraction of photon coincidence events to ∼6% on average. We analyze limitations of these quantum dots associated with irreversible photodegradation and fluctuations ("blinking") of the photoluminescence intensity. On the basis of emission intensity-lifetime correlations, we assign the "blinking" behavior to random charging/discharging of the quantum dot driven by photoassisted ionization. This study suggests that perovskite quantum dots hold significant promise for applications such as quantum emitters; however, to realize this goal, one must resolve the problems of photochemical stability and photocharging. These problems are largely similar to those of more traditional quantum dots and, hopefully, can be successfully resolved using advanced methodologies developed over the years in the field of colloidal nanostructures.

A quantum dot single-photon source with on-the-fly all-optical polarization control and timed emission

Sources of single photons are key elements for applications in quantum information science. Among the different sources available, semiconductor quantum dots excel with their integrability in semiconductor on-chip solutions and the potential that photon emission can be triggered on demand. Usually, the photon is emitted from a single-exciton ground state. Polarization of the photon and time of emission are either probabilistic or pre-determined by electronic properties of the system. Here, we study the direct two-photon emission from the biexciton. The two-photon emission is enabled by a laser pulse driving the system into a virtual state inside the band gap. From this intermediate state, the single photon of interest is then spontaneously emitted. We show that emission through this higher-order transition provides a versatile approach to generate a single photon. Through the driving laser pulse, polarization state, frequency and emission time of the photon can be controlled on-the-fly.

Single photon sources are important for applications in quantum information. Here, the authors exploit higher-order transitions from a biexciton state to the ground state of a semiconductor quantum dot to emit single photons with all-optical control of their frequency, polarization and emission time.

Quantum key distribution over 120 km using ultrahigh purity single-photon source and superconducting single-photon detectors

Advances in single-photon sources (SPSs) and single-photon detectors (SPDs) promise unique applications in the field of quantum information technology. In this paper, we report long-distance quantum key distribution (QKD) by using state-of-the-art devices: a quantum-dot SPS (QD SPS) emitting a photon in the telecom band of 1.5 μm and a superconducting nanowire SPD (SNSPD). At the distance of 100 km, we obtained the maximal secure key rate of 27.6 bps without using decoy states, which is at least threefold larger than the rate obtained in the previously reported 50-km-long QKD experiment. We also succeeded in transmitting secure keys at the rate of 0.307 bps over 120 km. This is the longest QKD distance yet reported by using known true SPSs. The ultralow multiphoton emissions of our SPS and ultralow dark count of the SNSPD contributed to this result. The experimental results demonstrate the potential applicability of QD SPSs to practical telecom QKD networks.