Spontaneous nanoscale corrugation of ion-eroded SiO2: the role of ion-irradiation-enhanced viscous flow

Subnanoscale Ion Beam Modification-Assisted Smoothing of Heterostructure Surfaces

Glass ceramic (GC) is the most promising material for objective lenses for extreme ultraviolet lithography that must meet the subnanometer precision, which is characterized by low values of high spatial frequency surface roughness (HSFR). However, the HSFR of GC is typically degraded during ion beam figuring (IBF). Herein, a developed method for constructing molecular dynamics (MD) models of GC was presented, and the formation mechanisms of surface morphologies were investigated. The results indicated that the generation of the dot-like microstructure was the result of the difference in the erosion rate caused by the difference in the intrinsic properties between ceramic phases (CPs) and glass phases (GPs). Further, the difference in the microstructure of the IBF surface under different beam angles was mainly caused by the difference in the two types of sputtering. Quantum mechanical calculations showed that the presence of interstitial atoms would result in electron rearrangement and that the electron localization can lead to a reduction in CP stability. To obtain a homogeneous surface, the effects of beam parameters on the heterogeneous surface were systematically investigated based on the proposed MD model. Then, a novel ion beam modification (IBM) method was proposed and demonstrated by TEM and GIXRD. The range of ion beam smoothing parameters that could effectively converge the HSFR of the modified surface was determined through numerous experiments. Using the optimized beam parameters, an ultrathin homogeneous modified surface within 3 nm was obtained. The HSFR of GC smoothed by ion beam modification-assisted smoothing (IBMS) dropped from 0.348 to 0.090 nm, a 74% reduction. These research results offer a deeper understanding of the morphology formation mechanisms of the GC surfaces involved in ion beam processing and may point to a new approach for achieving ultrasmooth heterostructure surfaces down to the subnanometer scale.

Convection-Induced Compositional Patterning at Grain Boundaries in Irradiated Alloys

We consider the stability of precipitates formed at grain boundaries (GBs) by radiation-induced segregation in dilute alloys subjected to irradiation. The effects of grain size and misorientation of symmetric-tilt GBs are quantified using phase field modeling. A novel regime is identified where, at long times, GBs are decorated by precipitate patterns that resist coarsening. Maps of the chemical Péclet number indicate that arrested coarsening takes place when solute advection dominates over thermal diffusion right up to the precipitate-matrix interface, preventing interfacial local equilibrium and overriding capillary effects. This contrasts with liquid-solid mixtures where convection always accelerates coarsening.

Dynamics of nanoscale triangular features on Ge surfaces

Ion beam sputtering, known as potential technique for producing nanoripple on various surfaces having wide range of applications. Along with nanoripple, triangular features are also superimposed, limiting their use for some potential applications. Here we are reporting evolution of triangular features on Ge (100) surfaces under low energy (300-1000 eV) Xe ion irradiation at room temperature for angles of incidence (61°-80°) and ion fluences of (5.34 × 10¹⁷-8.01 × 10¹⁸ions cm^-2). Triangular features appear with the onset of ripple formation and disappear when the ripple periodicity is lost. These features formation depend not only on material but also depend on the ratio of the ion/target mass. In comparison with numerical simulations based on modified anisotropic Kuramoto-Sivanshinsky equation, we find good agreement for the evolution of base angle and lateral length for the triangular features with ion incidence angle. The dynamics of triangular feature with ion incidence angle and ion fluence have been reported. Ion-incidence angle dependency is adequately replicated in numerical simulations. Experimentally the base angle and lateral length increases with increase in ion incidence angle, similar trend is observed in numerical simulation.

Surface nanopatterning by ion beam irradiation: compositional effects

Surface nanopatterning induced by ion beam irradiation (IBI) has emerged as an effective nanostructuring technique since it induces patterns on large areas of a wide variety of materials, in short time, and at low cost. Nowadays, two main subfields can be distinguished within IBI nanopatterning depending on the irrelevant or relevant role played by the surface composition. In this review, we give an up-dated account of the progress reached when surface composition plays a relevant role, with a main focus on IBI surface patterning with simultaneous co-deposition of foreign atoms. In addition, we also review the advances in IBI of compound surfaces as well as IBI systems where the ion employed is not a noble gas species. In particular, for the IBI with concurrent metal co-deposition, we detail the chronological evolution of these studies because it helps us to clarify some contradictory early reports. We describe the main patterns obtained with this technique as a function of the foreign atom deposition pathway, also focusing in those systematic studies that have contributed to identify the main mechanisms leading to the surface pattern formation and development. Likewise, we explain the main theoretical models aimed at describing these nanopattern formation processes. Finally, we address two main special features of the patterns induced by this technique, namely, the enhanced pattern ordering and the possibility to produce both morphological and chemical patterns.

Swelling as a stabilizing mechanism in irradiated thin films: II. Effect of swelling rate

It has long been observed experimentally that energetic ion-beam irradiation of semiconductor surfaces may lead to spontaneous nanopattern formation. For most ion/target/energy combinations, the patterns appear when the angle of incidence exceeds a critical angle, and the models commonly employed to understand this phenomenon exhibit the same behavioral transition. However, under certain conditions, patterns do not appear for any angle of incidence, suggesting an important mismatch between experiment and theory. Previous work by our group (Swenson and Norris 2018J. Phys.: Condens. Matter30304003) proposed a model incorporating radiation-induced swelling, which is known to occur experimentally, and found that in the analytically-tractable limit of small swelling rates, this effect is stabilizing at all angles of incidence, which may explain the observed suppression of ripples. However, at that time, it was not clear how the proposed model would scale with increased swelling rate. In the present work, we generalize that analysis to the case of arbitrary swelling rates. Using a numerical approach, we find that the stabilization effect persists for arbitrarily large swelling rates, and maintains a stability profile largely similar to that of the small swelling case. Our findings strongly support the inclusion of a swelling mechanism in models of pattern formation under ion beam irradiation, and suggest that the simpler small-swelling limit is an adequate approximation for the full mechanism. They also highlight the need for more-and more detailed-experimental measurements of material stresses during pattern formation.

Theory of the nanoscale surface ripples produced by ion irradiation of a miscut (001) gallium arsenide surface

We develop a theory for the surface ripples produced by near-normal-incidence ion bombardment of a (001) GaAs surface with a small miscut along the [110] direction. We restrict our attention to the case in which the energy of the incident ions is below the sputter yield threshold and the sample temperature is just above the recrystallization temperature. Highly ordered, faceted ripples with their wave vector aligned with the [110] direction form when the ion beam is normally incident and there is no miscut. Two additional terms appear in the equation of motion when the beam is obliquely incident and/or there is a miscut: a linearly dispersive term and a nonlinearly dispersive term. The coefficients of these terms can become large as the threshold temperature for pattern formation is approached from above. In the absence of strong nonlinear dispersion, strong linear dispersion leads to ripples with a dramatically increased degree of order. These ripples are nearly sinusoidal even though they are on the surface of a single crystal. The exceptionally high degree of order is disrupted by nonlinear dispersion if the coefficient of that term is sufficiently large. However, by choosing the angle of ion incidence appropriately, the coefficient of the nonlinearly dispersive term can be made small. Ion bombardment will then produce highly ordered ripples. For a different range of parameter values, nucleation and growth of facets and spinodal decomposition can occur.

Ion Beam Nanopatterning of Biomaterial Surfaces

Ion beam irradiation of solid surfaces may result in the self-organized formation of well-defined topographic nanopatterns. Depending on the irradiation conditions and the material properties, isotropic or anisotropic patterns of differently shaped features may be obtained. Most intriguingly, the periodicities of these patterns can be adjusted in the range between less than twenty and several hundred nanometers, which covers the dimensions of many cellular and extracellular features. However, even though ion beam nanopatterning has been studied for several decades and is nowadays widely employed in the fabrication of functional surfaces, it has found its way into the biomaterials field only recently. This review provides a brief overview of the basics of ion beam nanopatterning, emphasizes aspects of particular relevance for biomaterials applications, and summarizes a number of recent studies that investigated the effects of such nanopatterned surfaces on the adsorption of biomolecules and the response of adhering cells. Finally, promising future directions and potential translational challenges are identified.

Nanoscale pattern formation on solid surfaces bombarded by two broad ion beams in the regime in which sputtering is negligible

We study nanoscale pattern formation on the surface of a solid that is bombarded with two diametrically opposed, broad ion beams for ion energies low enough that sputtering can be neglected. We focus on the case in which the angle of ion incidence is just above the threshold angle for pattern formation. The equation of motion at sufficiently long times is derived using a generalized crater function formalism. This formalism also yields expressions for the coefficients in the equation of motion in terms of crater function moments. We find that virtually defect-free ripples with a sawtooth profile can emerge at sufficiently long times. The ripples also coarsen as time passes, in contrast to the near-threshold behavior of ripples in the higher energy regime in which sputtering is significant.

Parameter estimation for pattern formation induced by ion bombardment of solid surfaces using deep learning

The nanostructures produced by oblique-incidence broad beam ion bombardment of a solid surface are usually modelled by the anisotropic Kuramoto-Sivashinsky equation. This equation has five parameters, each of which depend on the target material and the ion species, energy, and angle of incidence. We have developed a deep learning model that uses a single image of the surface to estimate all five parameters in the equation of motion with root-mean-square errors that are under 3% of the parameter ranges used for training. This provides a tool that will allow experimentalists to quickly ascertain the parameters for a given sputtering experiment. It could also provide an independent check on other methods of estimating parameters such as atomistic simulations combined with the crater function formalism.

Theory of nanoscale ripple topographies produced by ion bombardment near the threshold for pattern formation

Nanoscale pattern formation on the surface of a solid that is bombarded with a broad ion beam is studied for angles of ion incidence, θ, just above the threshold angle for ripple formation, θ_{c}. We carry out a systematic expansion in powers of the small parameter ε≡(θ-θ_{c})^{1/2} and retain all terms up to a given order in ε. In the case of two diametrically opposed, obliquely incident beams, the equation of motion close to threshold and at sufficiently long times is rigorously shown to be a particular version of the anisotropic Kuramoto-Sivashinsky equation. We also determine the long-time, near-threshold scaling behavior of the rippled surface's wavelength, amplitude, and transverse correlation length for this case. When the surface is bombarded with a single obliquely incident beam, linear dispersion plays a crucial role close to threshold and dramatically alters the behavior: highly ordered ripples can emerge at sufficiently long times and solitons can propagate over the solid surface. A generalized crater function formalism that rests on a firm mathematical footing is developed and is used in our derivations of the equations of motion for the single and dual beam cases.

Self-assembled nano-dots structures on Si(111) surfaces by oblique angle sputter-deposition

Controlled surface modification and nano-dots structures over Si(111) surfaces have been produced by oblique angle sputter deposition of 80 keV Ar⁺ beam. Temporal parameters such as self-assemble, tunability of size and density of fabricated nano-dots exhibit distinct fluence dependence. Crystalline to amorphous (c/a) phase transition for sputter deposited Si(111) surfaces has been observed. RBS/C reveals the non-linear response of damage distribution with Ar ion fluence. Compositional alterations like degree of amorphization, damage distribution and depth profiling of Ar in these nano-structured surfaces has been correlated with the morphological and structural findings. The underlying self-organization mechanism relies in ion beam sputtering induced erosion and re-deposition of Si atoms thereby leading to mass transport inside the amorphous layers. Such nano-structured Si(111) surfaces could be applied as key engineering substrates for surface reconstruction, optoelectronic devices, data storage devices, recording media and photovoltaic applications.

Effect of dispersion on the nanoscale patterns produced by ion sputtering

Our simulations show that dispersion can have a crucial effect on the patterns produced by oblique-incidence ion sputtering. It can lead to the formation of raised and depressed triangular regions traversed by parallel-mode ripples, and these bear a strong resemblance to nanostructures that are commonly observed in experiments. In addition, if dispersion and transverse smoothing are sufficiently strong, highly ordered ripples form. Finally, dispersion can cause the formation of protrusions and depressions that are elongated along the projected beam direction even when there is no transverse instability. This may explain why topographies of this kind form for high angles of ion incidence in cases in which ion-induced mass redistribution is believed to dominate curvature-dependent sputtering.

Light scattering properties of self-organized nanostructured substrates for thin-film solar cells

We investigate the scattering properties of novel kinds of nano-textured substrates, fabricated in a self-organized fashion by defocused ion beam sputtering. These substrates provide strong and broadband scattering of light and can be useful for applications in thin-film solar cells. In particular, we characterize the transmitted light in terms of haze and angle-resolved scattering, and we compare our results with those obtained for the commonly employed Asahi-U texture. The results indicate that the novel substrate has better scattering properties compared to reference Asahi-U substrates. We observe super-Lambertian light scattering behavior in selected spectral and angular regions due to the peculiar morphology of the nano-textured interface, which combines high aspect ratio pseudo random structures with a one-dimensional periodic pattern. The enhancement of light absorption observed in a prototype thin film semiconductor absorber grown on nano-textured glass with respect to an Asahi-U substrate further confirms the superior light trapping properties of the novel substrate.

The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions

Germanium (Ge) surfaces have been irradiated with 26 keV gold (Au) ions at a constant fluence and at incidence angles varying from 0° to 85°. The evolution of the emerging nanostructures is studied by atomic force microscopy (AFM), scanning electron microscopy, x-ray photoelectron spectroscopy (XPS), and cross-sectional transmission electron microscopy. The obtained results are compared with findings reported in the literature. Periodic rippled patterns with the wave vector parallel to the projection of the ion beam direction onto the Ge surface develop between 30° and 45°. From 75° the morphology changes from parallel-mode ripples to parallel-mode terraces, and by further increasing the incidence angle the terraces coarsen and show a progressive break-up of the front facing the ion beam. No perpendicular-mode ripples or terraces have been observed. The analysis of the AFM height profiles and slope distributions shows in the 45°-85° range an angular dependence of the temporal scale for the onset of nonlinear processes. For incidence angles below 45°, the surface develops a sponge-like structure, which persists at higher incidence angles on the top and partially on the face of the facets facing the ion beam. The XPS and the energy-dispersive x-ray spectroscopy evidence the presence of Au nano-aggregates of different sizes for the different incidence angles. This study points out the peculiar behavior of Ge surfaces irradiated with medium-energy Au ions and warns about the differences to be faced when trying to build a universal framework for the description of semiconductor pattern evolution under ion-beam irradiation.

Swelling as a stabilizing mechanism in irradiated thin films

Irradiation of semiconductor surfaces often leads to the spontaneous formation of rippled structures at certain irradiation angles. However, at high enough energies, in the keV range, these structures are sometimes observed to vanish for all angles, despite the absence of any identified, universally-stabilizing physical mechanisms in operation. Here, we examine the effect on pattern formation of radiation-induced swelling, which has been excluded from prior treatments of stress in irradiated films. After developing a suitable continuum model, we perform a linear stability analysis to determine its effect on stability. Under appropriate simplifying assumptions, we find swelling indeed to be stabilizing at all angles for wavenumbers typical of experimental observations. Therefore, this mechanism may account for the suppression of ripple formation observed at energies over 1 keV.

Sawtooth structure formation under nonlinear-regime ion bombardment

Linear-regime Ar⁺ bombardment of Si produces symmetrical ripple structures at ion incidence angles above 45° measured off-normal (Madi 2009 J. Phys.: Condens. Matter 21). In the nonlinear regime, new behaviors emerge. In this paper, we present experimental results of ion bombardment that continues into the nonlinear regime until pattern saturation at multiple ion incidence angles, showing the evolution of their grazing incidence small-angle x-ray scattering (GISAXS) spectra as well as atomic force microscopy topographs of the final, saturated structures. Asymmetric structures emerge parallel to the direction of the projected ion beam on the sample surface, constituting a height asymmetry not found in the linear regime. We then present simulations of surface height evolution under ion bombardment using a nonlinear partial differential equation developed by Pearson and Bradley (2015 J. Phys.: Condens. Matter 27 015010). We present simulated GISAXS spectra from these simulations, as well as simulated scattering from a sawtooth structure using the FitGISAXS software package (Babonneau 2010 J. Appl. Crystallogr. 43 929-36), and compare the simulated spectra to those observed experimentally. We find that these simulations reproduce many features of the sawtooth structures, as well as the nearly-flat final GISAXS spectra observed experimentally perpendicular to the sawtooth structures. However, the model fails to reproduce the final GISAXS spectra observed parallel to the sawtooth structures.

Anisotropic Nanoscale Wrinkling in Solid-State Substrates

Pattern formation induced by wrinkling is a very common phenomenon exhibited in soft-matter substrates. In all these systems, wrinkles develop in the presence of compressively stressed thin films lying on compliant substrates. Here, the controlled growth of self-organized nanopatterns exploiting a wrinkling instability on a solid-state substrate is demonstrated. Soda-lime glasses are modified in the surface layers by a defocused ion beam, which triggers the formation of a compressively stressed surface layer deprived of alkali ions. When the substrate is heated up near its glass transition temperature, the wrinkling instability boosts the growth rate of the pattern by about two orders of magnitude. High-aspect-ratio anisotropic ripples bound by faceted ridges are thus formed, which represent an optimal template for guiding the growth of large-area arrays of functional nanostructures. The engineering over large square centimeter areas of quasi-1D arrays of Au nanostripe dimers endowed with tunable plasmonic response, strong optical dichroism, and high electrical conductivity is demonstrated. These peculiar functionalities allow these large-area substrates to be exploited as active metamaterials in nanophotonics, biosensing, and optoelectronics.

Emergence and detailed structure of terraced surfaces produced by oblique-incidence ion sputtering

We study the nanoscale terraced topographies that arise when a solid surface is bombarded with a broad ion beam that has a relatively high angle of incidence θ. We find that the surface is not completely flat between the regions in which the surface slope changes rapidly with position: Instead, small-amplitude ripples propagate along the surface. Our analytical work on these ripples yields their propagation velocity as well as the scaling behavior of their amplitude. Our simulations establish that the surfaces exhibit interrupted coarsening, i.e., the characteristic width and height of the surface disturbance grow for a time but ultimately asymptote to finite values as the fully terraced state develops. In addition, as θ is reduced, the surface can undergo a transition from a terraced morphology that changes little with time as it propagates over the surface to an unterraced state that appears to exhibit spatiotemporal chaos. For different ranges of the parameters, our equation of motion produces unterraced topographies that are remarkably similar to those seen in various experiments, including pyramidal structures that are elongated along the projected beam direction and isolated lenticular depressions.

Distinguishing physical mechanisms using GISAXS experiments and linear theory: the importance of high wavenumbers

In this work we analyze GISAXS measurements of the structure factor of Si surfaces evolving during 1 keV Ar+ ion bombardment. Using newly-developed methods sensitive to the full range of experimentally-available wavenumbers q, we extract the linear amplification rate R(q) governing surface stability over a range of wavenumbers 4–5 times larger than has previously been obtained. Comparing with theoretical models also retaining full wavenumber-dependence, we find an excellent fit of the experimental data over the full range of irradiation angles and wavenumbers. Moreover, the fitted parameter values represent experimental evaluation of the magnitudes of most physical mechanisms currently believed to be important to the pattern-formation process. In all cases, the extracted values agree well with direct observations or atomistic simulations of the same quantities, suggesting that GISAXS analysis may allow more powerful comparison between experiment and theory than had previously been thought.

Designing steep, sharp patterns on uniformly ion-bombarded surfaces

We propose and experimentally test a method to fabricate patterns of steep, sharp features on surfaces, by exploiting the nonlinear dynamics of uniformly ion-bombarded surfaces. We show via theory, simulation, and experiment that the steepest parts of the surface evolve as one-dimensional curves that move in the normal direction at constant velocity. The curves are a special solution to the nonlinear equations that arises spontaneously whenever the initial patterning on the surface contains slopes larger than a critical value; mathematically they are traveling waves (shocks) that have the special property of being undercompressive. We derive the evolution equation for the curves by considering long-wavelength perturbations to the one-dimensional traveling wave, using the unusual boundary conditions required for an undercompressive shock, and we show this equation accurately describes the evolution of shapes on surfaces, both in simulations and in experiments. Because evolving a collection of one-dimensional curves is fast, this equation gives a computationally efficient and intuitive method for solving the inverse problem of finding the initial surface so the evolution leads to a desired target pattern. We illustrate this method by solving for the initial surface that will produce a lattice of diamonds connected by steep, sharp ridges, and we experimentally demonstrate the evolution of the initial surface into the target pattern.

Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

Nanoscale patterns formed by ion bombardment of rotating binary materials

We explore the effects of sample rotation during ion sputtering of binary materials, as well as its effects during surfactant sputtering. We find that the rate with which the surface roughens or smooths depends on the period of rotation t(0) in the early time regime, in contrast to the behavior of elemental materials. In addition, the characteristic length scale l of the patterns that emerge can be tuned merely by changing the value of t(0). Finally, we demonstrate that l can even exhibit a jump discontinuity as t(0) is varied.

Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11.

Theory of terraced topographies produced by oblique-incidence ion bombardment of solid surfaces

When a solid surface is bombarded with a broad ion beam at a relatively large angle of incidence, the surface often develops a terraced form. We introduce a model that includes an improved approximation to the sputter yield and that produces a terraced surface morphology at long times for a wide range of parameter values. Numerical integrations of our equation of motion reveal that the terraces coarsen as time passes, just as observed experimentally. We also show that the terrace propagation direction can reverse as the amplitude of the surface disturbance grows. This highlights the important role higher order nonlinearities play in determining the propagation velocity at high fluences.

Self-organizing nanodot structures on InP surfaces evolving under low-energy ion irradiation: analysis of morphology and composition

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence Φ the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18) cm(-2), and ion fluxes f of (0.4 - 2) × 10(14) cm(-2) s(-1) were used. The surface morphology resulting from these ion irradiations was examined by atomic force microscopy (AFM). Generally, nanodot structures are formed on the surface; their dimensions (diameter, height and separation), however, were found to depend critically on the specific bombardment conditions. As a function of ion fluence, the mean radius r, height h, and spacing l of the dots can be fitted by power-law dependences: r ∝ Φ(0.40), h ∝ Φ(0.48), and l ∝ Φ(0.19). In terms of ion flux, there appears to exist a distinct threshold: below f ~ (1.3 ± 0.2) × 10(14) cm(-2) s(-1), no ordering of the dots exists and their size is comparatively small; above that value of f, the height and radius of the dots becomes substantially larger (h ~ 40 nm and r ~ 50 nm). This finding possibly indicates that surface diffusion processes could be important. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that APT can provide analytical information on the composition of individual InP nanodots. By means of 3D APT data, the surface region of such nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of approximately 1 nm and amount to 1.3 to 1.7.

Influence of local densification on microscopic morphology evolution during ion-beam sputtering of fused-silica surfaces

Morphology evolution at microscopic scales has an inseparable relationship with surface material behaviors, especially during ultrasmooth surface fabrication. In this work, the influence of initially existing local densification on ion nanopatterning of a fused-silica surface is investigated. Our research results indicate that fused-silica surfaces will easily densify permanently under a compressive load, exhibiting an anisotropic surface at the nanoscale. During the subsequent ion-beam sputtering process, the densification-dependent sputtering would influence and even dominate surface morphology evolution, which is identified as being an important evolution mechanism. However, ion-induced relaxation mechanisms will overcome surface roughening in the absence of local densification, and an ultrasmooth surface with root mean square roughness down to 0.06 nm is obtained in our experiment.

Silicide induced ion beam patterning of Si(001)

Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.

Optimization of growth and ordering of Ag nanoparticle arrays on ripple patterned alumina surfaces for strong plasmonic coupling

Low-energy ion beam sputtering of alumina thin films followed by growth of metallic nanoparticles by glancing angle deposition is optimized in order to produce arrays of silver nanoparticle chains with a strong plasmonic dichroism. A systematic study is undertaken in order to establish the influence of the angle of silver deposition and the ordering of the pre-patterned rippled surface on the morphology and organization of the nanoparticles, and on their associated optical properties. High ion fluence for ripple formation and low glancing angle for metal deposition favor the formation of aligned and elongated particles with sub-nanometer gaps. Numerical simulations show that these nanoparticle arrays generate high electric field enhancements for an excitation parallel to the particle chains, and therefore can be used for surface enhanced spectroscopies.

Microscopic morphology evolution during ion beam smoothing of Zerodur® surfaces

Ion sputtering of Zerodur material often results in the formation of nanoscale microstructures on the surfaces, which seriously influences optical surface quality. In this paper, we describe the microscopic morphology evolution during ion sputtering of Zerodur surfaces through experimental researches and theoretical analysis, which shows that preferential sputtering together with curvature-dependent sputtering overcomes ion-induced smoothing mechanisms leading to granular nanopatterns formation in morphology and the coarsening of the surface. Consequently, we propose a new method for ion beam smoothing (IBS) of Zerodur optics assisted by deterministic ion beam material adding (IBA) technology. With this method, Zerodur optics with surface roughness down to 0.15 nm root mean square (RMS) level is obtained through the experimental investigation, which demonstrates the feasibility of our proposed method.

Morphology evolution of fused silica surface during ion beam figuring of high-slope optical components

Ultra-precision and ultra-smooth surfaces are vitally important for some high performance optical systems. Ion beam figuring (IBF) is a well-established, highly deterministic method for the final precision figuring of extremely high quality optical surfaces, whereas ion sputtering induced smoothing, or roughening for nanoscale surface morphology, strongly depends on the processing conditions. Usually, an improper machining method would arouse the production of nanoscale patterns leading to the coarsening of the optical surface. In this paper, the morphology evolution mechanism on a fused silica surface during IBF of high-slope optical components has been investigated by means of atomic force microscopy. Figuring experiments are implemented on two convex spherical surfaces by using different IBF methods. Both of their surface errors are rapidly reduced to 1.2 nm root mean square (RMS) after removing similar deep material, but their surfaces are characterized with obviously different nanoscale morphologies. The experimental results indicate that the ion incidence angle dominates the microscopic morphology during the IBF process. At near-normal incidence, fused silica achieves an ultra-smooth surface with an RMS roughness value R(q) down to 0.1 nm, whereas nanoscale ripple patterns are observed at a large incidence angle with an R(q) value increasing to more than 0.9 nm. Additionally, the difference of incidence angles on various machined areas would influence the uniformity of surface quality, resulting from the interplay between the smoothing and roughening effects induced by ion sputtering.

Ageing dynamics of ion bombardment induced self-organization processes

Instabilities caused during the erosion of a surface by an ion beam can lead to the formation of self-organized patterns of nanostructures. Understanding the self-organization process requires not only the in-situ characterization of ensemble averaged properties but also probing the dynamics. This can be done with the use of coherent X-rays and analyzing the temporal correlations of the scattered intensity. Here, we show that the dynamics of a semiconductor surface nanopatterned by normal incidence ion beam sputtering are age-dependent and slow down with sputtering time. This work provides a novel insight into the erosion dynamics and opens new perspectives for the understanding of self-organization mechanisms.

Mass redistribution causes the structural richness of ion-irradiated surfaces

We show that the "sputter patterning" topographical instability is determined by the effects of ion impact-induced prompt atomic redistribution and that erosion--the consensus predominant cause--is essentially irrelevant. We use grazing incidence small angle x-ray scattering to measure in situ the damping of noise or its amplification into patterns via the linear dispersion relation. A model based on the effects of impact-induced redistribution of those atoms that are not sputtered away explains both the observed ultrasmoothening at low angles from normal incidence and the instability at higher angles.

Ion-Induced Nanoscale Ripple Patterns on Si Surfaces: Theory and Experiment

Nanopatterning of solid surfaces by low-energy ion bombardment has received considerable interest in recent years. This interest was partially motivated by promising applications of nanopatterned substrates in the production of functional surfaces. Especially nanoscale ripple patterns on Si surfaces have attracted attention both from a fundamental and an application related point of view. This paper summarizes the theoretical basics of ion-induced pattern formation and compares the predictions of various continuum models to experimental observations with special emphasis on the morphology development of Si surfaces during sub-keV ion sputtering.

The morphology of amorphous SiO(2) surfaces during low energy ion sputtering

The morphology of different amorphous or amorphized SiO(2) surfaces, including thermally grown films, fused silica, and single crystalline quartz, during low energy ion sputtering has been investigated by means of atomic force microscopy. For all three materials, the formation of periodic ripple patterns oriented normal to the direction of the ion beam is observed at intermediate incident angles. At near-normal incidence, the SiO(2) surfaces remain flat, whereas a rotation of the ripple patterns is observed at grazing incidence. At intermediate angles, the patterns on the different surfaces exhibit wavelength coarsening of different strengths, which can be attributed to different amounts of near-surface mass transport by the surface-confined ion-enhanced viscous flow. In the framework of the recent hydrodynamic model of ion erosion, the observed differences in ripple coarsening are consistent with this interpretation and indicate that the surface energies of thermally grown SiO(2) and amorphized quartz are lower and higher than that of fused silica, respectively.

Ripple formation and smoothening on insulating surfaces

Ion bombardment of insulating surfaces such as Al(2)O(3) and SiO(2) produces ordered patterns of ripples. The ripple wavelength varies with ion energy, incidence angle and substrate temperature. A region of stability is also known to exist for near-normal incidence during Ar(+) ion bombardment, where initially rough surfaces are smoothened. A number of relaxation mechanisms are found to be operative under specific conditions, including: surface-confined viscous flow, impact-induced lateral currents and impact-assisted surface diffusion during ion bombardment at high temperatures. Most of the experimentally observed phenomena are explained through extension of the Bradley-Harper theory by the addition of these new processes. Phenomena that are not explained by the linear theory, such as the saturation of surface amplitude during the formation of ripples, are thought to arise from nonlinear effects. This contribution describes the present status of the linear theory relevant to this class of materials and recent experimental results.

Coupling of morphology to surface transport in ion-beam-irradiated surfaces: normal incidence and rotating targets

Continuum models have proved their applicability to describe nanopatterns produced by ion-beam sputtering of amorphous or amorphizable targets at low and medium energies. Here we pursue the recently introduced 'hydrodynamic approach' in the cases of bombardment at normal incidence, or of oblique incidence onto rotating targets, known to lead to self-organized arrangements of nanodots. Our approach stresses the dynamical roles of material (defect) transport at the target surface and of local redeposition. By applying results previously derived for arbitrary angles of incidence, we derive effective evolution equations for these geometries of incidence, which are then numerically studied. Moreover, we show that within our model these equations are identical (albeit with different coefficients) in both cases, provided surface tension is isotropic in the target. We thus account for the common dynamics for both types of incidence conditions, namely formation of dots with short-range order and long-wavelength disorder, and an intermediate coarsening of dot features that improves the local order of the patterns. We provide for the first time approximate analytical predictions for the dependence of stationary dot features (amplitude and wavelength) on phenomenological parameters, that improve upon previous linear estimates. Finally, our theoretical results are discussed in terms of experimental data.

Nanopatterning by multiple-ion-beam sputtering

We conducted a systematic study on nanopatterning by multiple-ion-beam sputtering, focusing on the superposition of the simple patterns formed by individual ion beams. When Au(001) is simultaneously sputtered by two ion beams at grazing incidence, both nanodot and nanohole patterns are obtained. If a rippled surface is subsequently sputtered at normal incidence, a nanobead pattern is obtained. All of the obtained patterns consist of the nanopatterns formed by individual ion beams; however, the superposition of nanopatterns is not realized in its ideal form. We also discuss the microscopic mechanism of pattern formation by multiple-ion-beam sputtering, and consider the questions and possibilities remaining to be explored.

A multiscale crater function model for ion-induced pattern formation in silicon

The ion-induced formation of nanometer-scale ripples on semiconductors, long known as the sputter erosion surface instability, is explained using a coupled atomistic-continuum framework. Molecular dynamics simulations of individual medium energy ion impacts on an amorphous silicon target show that the average effect of an incident ion is to leave an ångström-scale crater-like impression on the surface, complete with a crater rim. The summation of many such impacts on a micron-scale surface, combined with the smoothing effect of surface diffusion, leads to the formation of surface ripples aligned perpendicular to the projected ion beam direction. The same numerical approach can be used to evaluate the standard analytical model for this process, known as the Bradley-Harper model. Both Bradley-Harper surface evolution and the atomistically determined crater function surface evolution are computed over time under conditions similar to those for known experimental data. The results show that the surface mass rearrangement associated with the finite atomistic crater rims explains a key experimental observation, ripple amplitude saturation, which cannot be accurately explained using the Bradley-Harper model or any other known numerical or analytical model for the sputter erosion surface instability.

Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering

The bombardment of surfaces with low-energy ion beams leads to material erosion and can be accompanied by changes in the topography. Under certain conditions this surface erosion can result in well-ordered nanostructures. Here an overview of the pattern formation on Si and Ge surfaces under low-energy ion beam erosion at room temperature will be given. In particular, the formation of ripple and dot patterns, and the influence of different process parameters on their formation, ordering, shape and type will be discussed. Furthermore, the internal ion beam parameters inherent to broad beam ion sources are considered as an additional degree of freedom for controlling the pattern formation process. In this context: (i) formation of ripples at near-normal ion incidence, (ii) formation of dots at oblique ion incidence without sample rotation, (iii) transition between patterns, (iv) formation of ripples with different orientations and (v) long range ordered dot patterns will be presented and discussed.

From crater functions to partial differential equations: a new approach to ion bombardment induced nonequilibrium pattern formation

We develop a methodology for deriving continuum partial differential equations for the evolution of large-scale surface morphology directly from molecular dynamics simulations of the craters formed from individual ion impacts. Our formalism relies on the separation between the length scale of ion impact and the characteristic scale of pattern formation, and expresses the surface evolution in terms of the moments of the crater function. We demonstrate that the formalism reproduces the classical Bradley-Harper results, as well as ballistic atomic drift, under the appropriate simplifying assumptions. Given an actual set of converged molecular dynamics moments and their derivatives with respect to the incidence angle, our approach can be applied directly to predict the presence and absence of surface morphological instabilities. This analysis represents the first work systematically connecting molecular dynamics simulations of ion bombardment to partial differential equations that govern topographic pattern-forming instabilities.

Linear dynamics of ion sputtered surfaces: instability, stability and bifurcations

The linear dynamics of ion sputtered solids is essential to understanding the evolution of ordered and disordered surface patterns. We review the existing models of linear dynamics and point out qualitative discrepancies between theory and experimental observations that characterize the linear regime. In particular, we emphasize the importance of experimental and theoretical analysis of bifurcation points: certain values of control parameters such as ion beam angle or energy, where flat surfaces undergo a transition from stability to instability.

Large area smoothing of surfaces by ion bombardment: fundamentals and applications

Ion beam erosion can be used as a process for achieving surface smoothing at microscopic length scales and for the preparation of ultrasmooth surfaces, as an alternative to nanostructuring of various surfaces via self-organization. This requires that in the evolution of the surface topography different relaxation mechanisms dominate over the roughening, and smoothing of initially rough surfaces can occur. This contribution focuses on the basic mechanisms as well as potential applications of surface smoothing using low energy ion beams. In the first part, the fundamentals for the smoothing of III/V semiconductors, Si and quartz glass surfaces using low energy ion beams (ion energy: ≤2000 eV) are reviewed using examples. The topography evolution of these surfaces with respect to different process parameters (ion energy, ion incidence angle, erosion time, sample rotation) has been investigated. On the basis of the time evolution of different roughness parameters, the relevant surface relaxation mechanisms responsible for surface smoothing are discussed. In this context, physical constraints as regards the effectiveness of surface smoothing by direct ion bombardment will also be addressed and furthermore ion beam assisted smoothing techniques are introduced. In the second application-orientated part, recent technological developments related to ion beam assisted smoothing of optically relevant surfaces are summarized. It will be demonstrated that smoothing by direct ion bombardment in combination with the use of sacrificial smoothing layers and the utilization of appropriate broad beam ion sources enables the polishing of various technologically important surfaces down to 0.1 nm root mean square roughness level, showing great promise for large area surface processing. Specific examples are given for ion beam smoothing of different optical surfaces, especially for substrates used for advanced optical applications (e.g., in x-ray optics and components for extreme ultraviolet lithography).

Ripple formation on silicon by medium energy ion bombardment

The formation of a self-organized nanoscale ripple pattern after off-normally incident ion bombardment on the surface of amorphous materials, or on semiconductors like silicon that are easily amorphized by ion bombardment, has attracted much attention in recent years from the point of view of both theory and applications. As the energy of the impinging ions increases from low to medium, i.e. several hundred eV to a few tens of keV, the ratio of amplitude to wavelength of the generated ripple pattern becomes so large that inter-peak shadowing of the incident ion flux takes place. Morphologically, the sinusoidal surface profile starts to become distorted after prolonged ion bombardment under such conditions. Structural and compositional modifications of the ripple morphology generated under shadowing conditions include the formation of a thicker amorphous layer with high incorporation of argon atoms in the form of nanometer sized bubbles around the middle part of the front slope of the ripple facing the ion beam, as compared to the rear slope. The present paper reviews recent developments in the experimental study of morphological, structural and compositional aspects of ripple patterns generated on a silicon surface after medium keV (30-120 keV) argon bombardment mainly at an angle of ion incidence of 60°.

Simultaneous formation of two ripple modes on ion sputtered silicon

The amorphized surface of Si(100) sputtered with low energy ions at moderate temperature was found to develop two perpendicular ripple patterns overlaying each other. The evolution of these patterns was studied over a wide range of fluence. Coarsening of both ripple modes was observed, showing a similar time dependence with a coarsening exponent of n approximately 0.08. In the high fluence regime, the surface enters a steady state with both ripple modes still present.

Propulsion of ripples on glass by ion bombardment

The propulsion of surface ripples on SiO(2) by an ion beam was investigated by in situ electron microscopy. The observed propagation of the ripples contradicts existing models for ion-beam-induced ripple development. A new model based on the Navier-Stokes relations for viscous flow in a thin layer is introduced. It includes inhomogeneous viscous flow, driven by spatial variations in the deposition of the energy of the ion beam. The model explains the observed reversed propagation. The hitherto unknown propulsion mechanism is important for understanding nanoscale pattern formation by ion bombardment.

Nonlinear ripple dynamics on amorphous surfaces patterned by ion beam sputtering

Erosion by ion-beam sputtering (IBS) of amorphous targets at off-normal incidence frequently produces a (nanometric) rippled surface pattern, strongly resembling macroscopic ripples on aeolian sand dunes. A suitable generalization of continuum descriptions of the latter allows us to describe theoretically for the first time the main nonlinear features of ripple dynamics by IBS, namely, wavelength coarsening and nonuniform translation velocity, that agree with similar results in experiments and discrete models. These properties are seen to be the anisotropic counterparts of in-plane ordering and (interrupted) pattern coarsening in IBS experiments on rotating substrates and at normal incidence.