Mott-Hubbard transition versus Anderson localization in correlated electron systems with disorder

Charge Transport in the Presence of Correlations and Disorder: Organic Conductors and Manganites

One of the most fascinating aspects of condensed matter is its ability to conduct electricity, which is particularly pronounced in conventional metals such as copper or silver. Such behavior stems from a strong tendency of valence electrons to delocalize in a periodic potential created by ions in the crystal lattice of a given material. In many advanced materials, however, this basic delocalization process of the valence electrons competes with various processes that tend to localize these very same valence electrons, thus driving the insulating behavior. The two such most important processes are the Mott localization, driven by strong correlation effects among the valence electrons, and the Anderson localization, driven by the interaction of the valence electrons with a strong disorder potential. These two localization processes are almost exclusively considered separately from both an experimental and a theoretical standpoint. Here, we offer an overview of our long-standing research on selected organic conductors and manganites, that clearly show the presence of both these localization processes. We discuss these results within existing theories of Mott-Anderson localization and argue that such behavior could be a common feature of many advanced materials.

Electronic and valleytronic properties of crystalline boron-arsenide tuned by strain and disorder

Ab initio density functional theory (DFT) and DFT plus coherent potential approximation (DFT + CPA) are employed to reveal, respectively, the effect of in-plane strain and site-diagonal disorder on the electronic structure of cubic boron arsenide (BAs). It is demonstrated that tensile strain and static diagonal disorder both reduce the semiconducting one-particle band gap of BAs, and a V-shaped p-band electronic state emerges - enabling advanced valleytronics based on strained and disordered semiconducting bulk crystals. At biaxial tensile strains close to 15% the valence band lineshape relevant for optoelectronics is shown to coincide with one reported for GaAs at low energies. The role played by static disorder on the As sites is to promote p-type conductivity in the unstrained BAs bulk crystal, consistent with experimental observations. These findings illuminate the intricate and interdependent changes in crystal structure and lattice disorder on the electronic degrees of freedom of semiconductors and semimetals.

Effects of the on-site energy on the electronic response of Sr3(Ir1−xMnx)2O7

We investigated the doping and temperature evolutions of the optical response of Sr3(Ir1−xMnx)2O7 single crystals with 0 ≤ x ≤ 0.36 by utilizing infrared spectroscopy. Substitution of 3d transition metal Mn ions into Sr3Ir2O7 is expected to induce an insulator-to-metal transition via the decrease in the magnitude of the spin–orbit coupling and the hole doping. In sharp contrast, our data reveal the resilience of the spin–orbit coupling and the incoherent character of the charge transport. Upon Mn substitution, an incoherent in-gap excitation at about 0.25 eV appeared with the decrease in the strength of the optical transitions between the effective total angular momentum Jeff bands of the Ir ions. The resonance energies of the optical transitions between the Jeff bands which are directly proportional to the magnitude of the spin–orbit coupling hardly varied. In addition to these evolutions of the low-energy response, Mn substitution led to the emergence of a distinct high-energy optical excitation at about 1.2 eV which is larger than the resonance energies of the optical transitions between the Jeff bands. This observation indicates that the Mn 3d states are located away from the Ir 5d states in energy and that the large difference in the on-site energies of the transition metal ions is responsible for the incoherent charge transport and the robustness of the spin–orbit coupling. The effect of Mn substitution was also registered in the temperature dependence of the electronic response. The anomaly in the optical response of the parent compound observed at the antiferromagnetic transition temperature is notably suppressed in the Mn-doped compounds despite the persistence of the long-range antiferromagnetic ordering. The suppression of the spin-charge coupling could be related to charge disproportionation of the Ir ions.

Grain-Size-Induced Collapse of Variable Range Hopping and Promotion of Ferromagnetism in Manganite La0.5Ca0.5MnO3

Among transition metal oxides, manganites have attracted significant attention because of colossal magnetoresistance (CMR)—a magnetic field-induced metal–insulator transition close to the Curie temperature. CMR is closely related to the ferromagnetic (FM) metallic phase which strongly competes with the antiferromagnetic (AFM) charge ordered (CO) phase, where conducting electrons localize and create a long range order giving rise to insulator-like behavior. One of the major open questions in manganites is the exact origin of this insulating behavior. Here we report a dc resistivity and magnetization study on manganite La1−xCaxMnO3 ceramic samples with different grain size, at the very boundary between CO/AFM insulating and FM metallic phases x=0.5. Clear signatures of variable range hopping (VRH) are discerned in resistivity, implying the disorder-induced (Anderson) localization of conducting electrons. A significant increase of disorder associated with the reduction in grain size, however, pushes the system in the opposite direction from the Anderson localization scenario, resulting in a drastic decrease of resistivity, collapse of the VRH, suppression of the CO/AFM phase and growth of an FM contribution. These contradictory results are interpreted within the standard core-shell model and recent theories of Anderson localization of interacting particles.

Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H-MoTe_{2}

Artificially created two-dimensional (2D) interfaces or structures are ideal for seeking exotic phase transitions due to their highly tunable carrier density and interfacially enhanced many-body interactions. Here, we report the discovery of a metal-insulator transition (MIT) and an emergent gapped phase in the metal-semiconductor interface that is created in 2H-MoTe_{2} via alkali-metal deposition. Using angle-resolved photoemission spectroscopy, we found that the electron-phonon coupling is strong at the interface as characterized by a clear observation of replica shake-off bands. Such strong electron-phonon coupling interplays with disorder scattering, leading to an Anderson localization of polarons which could explain the MIT. The domelike emergent gapped phase could then be attributed to a polaron extended state or phonon-mediated superconductivity. Our results demonstrate the capability of alkali-metal deposition as an effective method to enhance the many-body interactions in 2D semiconductors. The surface-doped 2H-MoTe_{2} is a promising candidate for realizing polaronic insulator and high-T_{c} superconductivity.

An equation of state for expanded metals

We present a model equation of states for expanded metals, which contains a pressure term due to a screened-Coulomb potential with a screening parameter reflecting the Mott-Anderson metal-to-nonmetal transition. As anticipated almost 80 years ago by Zel'dovich and Landau, this term gives rise to a second coexistence line in the phase diagram, indicating a phase separation between a metallic and a nonmetallic liquid.

Disordered Mott-Hubbard Physics in Nanoparticle Solids: Transitions Driven by Disorder, Interactions, and Their Interplay

We show that adapting the knowledge developed for the disordered Mott-Hubbard model to nanoparticle (NP) solids can deliver many very helpful new insights. We developed a hierarchical nanoparticle transport simulator (HINTS), which builds from localized states to describe the disorder-localized and Mott-localized phases of NP solids and the transitions out of these localized phases. We also studied the interplay between correlations and disorder in the corresponding multiorbital Hubbard model at and away from integer filling by dynamical mean field theory. This DMFT approach is complementary to HINTS, as it builds from the metallic phase of the NP solid. The mobility scenarios produced by the two methods are strikingly similar and account for the mobilities measured in NP solids. We conclude this work by constructing the comprehensive phase diagram of PbSe NP solids on the disorder-filling plane.

Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene

We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the electronic properties of carbon-doped monolayers are dramatically changed by controlling the doping sites in the structures, which is related to the amount of disorder introduced in the lattice and electron-electron correlation effects. By changing the position of the carbon dopants, we found that a Mott-Anderson transition is achieved. Moreover, the band gap is determined by the level of lattice disorder and electronic correlation effects. Finally, these structures are ferromagnetic even under disorder which has potential applications in Si-based nanoelectronics, such as field-effect transistors (FETs).

Local Spectroscopies Reveal Percolative Metal in Disordered Mott Insulators

We elucidate the mechanism by which a Mott insulator transforms into a non-Fermi liquid metal upon increasing disorder at half filling. By correlating maps of the local density of states, the local magnetization, and the local bond conductivity, we find a collapse of the Mott gap toward a V-shaped pseudogapped density of states that occurs concomitantly with the decrease of magnetism around the highly disordered sites but an increase of bond conductivity. These metallic regions percolate to form an emergent non-Fermi liquid phase with a conductivity that increases with temperature. Bond conductivity measured via local microwave impedance combined with charge and spin local spectroscopies are ideal tools to corroborate our predictions.

Aperiodic space-inhomogeneous quantum walks: Localization properties, energy spectra, and enhancement of entanglement

We study the localization properties, energy spectra, and coin-position entanglement of the aperiodic discrete-time quantum walks. The aperiodicity is described by spatially dependent quantum coins distributed on the lattice, whose distribution is neither periodic (Bloch-like) nor random (Anderson-like). Within transport properties we identified delocalized and localized quantum walks mediated by a proper adjusting of aperiodic parameter. Both scenarios are studied by exploring typical quantities (inverse participation ratio, survival probability, and wave packet width), as well as the energy spectra of an associated effective Hamiltonian. By using the energy spectra analysis, we show that the early stage the inhomogeneity leads to a vanishing gap between two main bands, which justifies the predominantly delocalized character observed for ν<0.5. With increase of ν arise gaps and flat bands on the energy spectra, which corroborates the suppression of transport detected for ν>0.5. For ν high enough, we observe an energy spectra, which resembles that described by the one-dimensional Anderson model. Within coin-position entanglement, we show many settings in which an enhancement in the ability to entangle is observed. This behavior brings new information about the role played by aperiodicity on the coin-position entanglement for static inhomogeneous systems, reported before as almost always reducing the entanglement when comparing with the homogeneous case. We extend the analysis in order to show that systems with static inhomogeneity are able to exhibit asymptotic limit of entanglement.

Carbon sp chains in diamond nanocavities

We propose a new class of carbon allotropes obtained by combining linear sp carbon chains with sp3 bulk carbon. The structure of these crystalline carbon allotropes consists of sp chains inserted in cylindrical cavities periodically arranged in hexagonal diamond (lonsdaleite). We carry out a detailed computational analysis of the structural, electronic, and vibrational properties of a simple form in this class: a single C6 strand embedded in a nm-sized cavity. We obtain a metallic allotrope exhibiting characteristic high-frequency vibrations associated with the sp chain stretching modes, and characterized by long-time room-temperature stability. In addition, we suggest how numerous similar allotropes could be constructed within this class, that we call zayedenes, all characterized by comparable metallicity and high-frequency vibrations.

Systematic Quantum Cluster Typical Medium Method for the Study of Localization in Strongly Disordered Electronic Systems

Great progress has been made in recent years towards understanding the properties of disordered electronic systems. In part, this is made possible by recent advances in quantum effective medium methods which enable the study of disorder and electron-electronic interactions on equal footing. They include dynamical mean-field theory and the Coherent Potential Approximation, and their cluster extension, the dynamical cluster approximation. Despite their successes, these methods do not enable the first-principles study of the strongly disordered regime, including the effects of electronic localization. The main focus of this review is the recently developed typical medium dynamical cluster approximation for disordered electronic systems. This method has been constructed to capture disorder-induced localization and is based on a mapping of a lattice onto a quantum cluster embedded in an effective typical medium, which is determined self-consistently. Unlike the average effective medium-based methods mentioned above, typical medium-based methods properly capture the states localized by disorder. The typical medium dynamical cluster approximation not only provides the proper order parameter for Anderson localized states, but it can also incorporate the full complexity of Density-Functional Theory (DFT)-derived potentials into the analysis, including the effect of multiple bands, non-local disorder, and electron-electron interactions. After a brief historical review of other numerical methods for disordered systems, we discuss coarse-graining as a unifying principle for the development of translationally invariant quantum cluster methods. Together, the Coherent Potential Approximation, the Dynamical Mean-Field Theory and the Dynamical Cluster Approximation may be viewed as a single class of approximations with a much-needed small parameter of the inverse cluster size which may be used to control the approximation. We then present an overview of various recent applications of the typical medium dynamical cluster approximation to a variety of models and systems, including single and multiband Anderson model, and models with local and off-diagonal disorder. We then present the application of the method to realistic systems in the framework of the DFT and demonstrate that the resulting method can provide a systematic first-principles method validated by experiment and capable of making experimentally relevant predictions. We also discuss the application of the typical medium dynamical cluster approximation to systems with disorder and electron-electron interactions. Most significantly, we show that in the limits of strong disorder and weak interactions treated perturbatively, that the phenomena of 3D localization, including a mobility edge, remains intact. However, the metal-insulator transition is pushed to larger disorder values by the local interactions. We also study the limits of strong disorder and strong interactions capable of producing moment formation and screening, with a non-perturbative local approximation. Here, we find that the Anderson localization quantum phase transition is accompanied by a quantum-critical fan in the energy-disorder phase diagram.

Disorder induced power-law gaps in an insulator-metal Mott transition

A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and a variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power-law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems, but their origins are as-yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr3(Ir1-xRux)2O7 (0 ≤ x ≤ 0.5) which drive the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT, such as power-law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism, can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators.

Can disorder act as a chemical pressure? An optical study of the Hubbard model

The optical properties have been studied using the dynamical mean-field theory on a disordered Hubbard model. Despite the fact that disorder turns a metal to an insulator in high dimensional correlated materials, we notice that it can enhance certain metallic behavior as if a chemical pressure is applied to the system resulting in an increase of the effective lattice bandwidth (BW). We study optical properties in such a scenario and compare results with experiments where the BW is changed through isovalent chemical substitution (keeping electron filling unaltered) and obtain remarkable similarities vindicating our claim. We also make the point that these similarities differ from some other forms of BW tuned optical effects.

Local integrals of motion in the two-site Anderson-Hubbard model

It has been proposed that the states of fully many-body localized systems can be described in terms of conserved local pseudospins. Due to the multitude of ways to define these, the explicit identification of the optimally local pseudospins in specific systems is non-trivial. Given continuing intense interest in the role of disorder in strongly correlated systems, we consider the disordered Hubbard model. By studying a small system we provide concrete examples of the form of local integrals of motion in the Anderson-Hubbard model. Moreover, we are able not only to identify the most local choice but also to explore the nature of the distribution of possible choices. We track the evolution of the optimally localized pseudospins as hopping and interactions are varied to move the system away from the trivially localized atomic limit.

Anderson Insulators in Self-Assembled Gold Nanoparticles Thin Films: Single Electron Hopping between Charge Puddles Originated from Disorder

The Anderson insulating states in Au nanoparticle assembly are identified and studied under the application of magnetic fields and gate voltages. When the inter-nanoparticle tunneling resistance is smaller than the quantum resistance, the system showing zero Mott gap can be insulating at very low temperature. In contrast to Mott insulators, Anderson insulators exhibit great negative magnetoresistance, inferring charge delocalization in a strong magnetic field. When probed by the electrodes spaced by ~200 nm, they also exhibit interesting gate-modulated current similar to the multi-dot single electron transistors. These results reveal the formation of charge puddles due to the interplay of disorder and quantum interference at low temperatures.

Breakdown of Hooke's law of elasticity at the Mott critical endpoint in an organic conductor

The Mott metal-insulator transition, a paradigm of strong electron-electron correlations, has been considered as a source of intriguing phenomena. Despite its importance for a wide range of materials, fundamental aspects of the transition, such as its universal properties, are still under debate. We report detailed measurements of relative length changes ΔL/L as a function of continuously controlled helium-gas pressure P for the organic conductor κ-(BEDT-TTF)₂Cu[N(CN)₂]Cl across the pressure-induced Mott transition. We observe strongly nonlinear variations of ΔL/L with pressure around the Mott critical endpoint, highlighting a breakdown of Hooke's law of elasticity. We assign these nonlinear strain-stress relations to an intimate, nonperturbative coupling of the critical electronic system to the lattice degrees of freedom. Our results are fully consistent with mean-field criticality, predicted for electrons in a compressible lattice with finite shear moduli. We argue that the Mott transition for all systems that are amenable to pressure tuning shows the universal properties of an isostructural solid-solid transition.

Mott Quantum Criticality in the Anisotropic 2D Hubbard Model

We present evidence for Mott quantum criticality in an anisotropic two-dimensional system of coupled Hubbard chains at half-filling. In this scenario emerging from variational cluster approximation and cluster dynamical mean-field theory, the interchain hopping t_{⊥} acts as a control parameter driving the second-order critical end point T_{c} of the metal-insulator transition down to zero at t_{⊥}^{c}/t≃0.2. Below t_{⊥}^{c}, the volume of the hole and electron Fermi pockets of a compensated metal vanishes continuously at the Mott transition. Above t_{⊥}^{c}, the volume reduction of the pockets is cut off by a first-order transition. We discuss the relevance of our findings to a putative quantum critical point in layered organic conductors, whose location remains elusive so far.

ZnO Nanorods on a LaAlO3 -SrTiO3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials.

Quantum Spin Liquid Emerging from Antiferromagnetic Order by Introducing Disorder

Quantum spin liquids, which are spin versions of quantum matter, have been sought after in systems with geometrical frustration. We show that disorder drives a classical magnet into a quantum spin liquid through conducting NMR experiments on an organic Mott insulator, κ-(ET)_{2}Cu[N(CN)_{2}]Cl. Antiferromagnetic ordering in the pristine crystal, when irradiated by x rays, disappears. Spin freezing, spin gap, and critical slowing down are not observed, but gapless spin excitations emerge, suggesting a novel role of disorder that brings forth a quantum spin liquid from a classical ordered state.

Electronic properties of epitaxial silicene on diboride thin films

The Si counterpart of graphene—silicene—has partially similar but also unique electronic properties that relate to the presence of an extended π electronic system, the flexible crystal structure and the large spin-orbit coupling. Driven by predictions for exceptional electronic properties like the presence of massless charge carriers, the occurrence of the quantum Hall effect and perfect spin-filtering in free-standing, unreconstructed silicene, the recent experimental realization of largely sp(2)-hybridized, Si honeycomb lattices grown on a number of metallic substrates provided the opportunity for the systematic study of the electronic properties of epitaxial silicene phases. Following a discussion of theoretical predictions for free-standing silicene, we review properties of (√3 × √3)-reconstructed, epitaxial silicene phases but with the emphasis on the extensively studied case of silicene on ZrB2(0 0 0 1) thin films. As the experimental results show, the structural and electronic properties are highly interlinked and leave their fingerprint on the chemical states of individual Si atoms as revealed in core-level photoelectron spectra as well as in the valence electronic structure and low-energy interband transitions. With the critical role of substrates and of the chemical stability of epitaxial silicene highlighted, finally, benefits and challenges for any future silicene-based nanoelectronics are being put into perspective.

Effective cluster typical medium theory for the diagonal Anderson disorder model in one- and two-dimensions

We develop a cluster typical medium theory to study localization in disordered electronic systems. Our formalism is able to incorporate non-local correlations beyond the local typical medium theory in a systematic way. The cluster typical medium theory utilizes the momentum-resolved typical density of states and hybridization function to characterize the localization transition. We apply the formalism to the Anderson model of localization in one- and two-dimensions. In one-dimension, we find that the critical disorder strength scales inversely with the linear cluster size with a power law, Wc ∼ (1/Lc)(1/ν), whereas in two-dimensions, the critical disorder strength decreases logarithmically with the linear cluster size. Our results are consistent with previous numerical work and are in agreement with the one-parameter scaling theory.

Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium

We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si:P and Ge:P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

Identification of Mott insulators and Anderson insulators in self-assembled gold nanoparticles thin films

How the interparticle tunnelling affects the charge conduction of self-assembled gold nanoparticles is studied by three means: tuning the tunnel barrier width by different molecule modification and by substrate bending, and tuning the barrier height by high-dose electron beam exposure. All approaches indicate that the metal-Mott insulator transition is governed predominantly by the interparticle coupling strength, which can be quantified by the room temperature sheet resistance. The Hubbard gap, following the prediction of quantum fluctuation theory, reduces to zero rapidly as the sheet resistance decreases to the quantum resistance. At very low temperature, the fate of devices near the Mott transition depends on the strength of disorder. The charge conduction is from nearest-neighbour hopping to co-tunnelling between nanoparticles in Mott insulators whereas it is from variable-range hopping through charge puddles in Anderson insulators. When the two-dimensional nanoparticle network is under a unidirectional strain, the interparticle coupling becomes anisotropic so the average sheet resistance is required to describe the charge conduction.

Site-disorder driven superconductor-insulator transition: a dynamical mean field study

We investigate the effect of site disorder on the superconducting state in the attractive Hubbard model within the framework of dynamical mean field theory. For a fixed interaction strength (U), the superconducting order parameter decreases monotonically with increasing disorder (x), while the single-particle spectral gap decreases for small x, reaches a minimum and keeps increasing for larger x. Thus, the system remains gapped beyond the destruction of the superconducting state, indicating a disorder-driven superconductor-insulator transition. We investigate this transition in depth considering the effects of weak and strong disorder for a range of interaction strengths. In the clean case, the order parameter is known to increase monotonically with increasing interaction, saturating at a finite value asymptotically for U→∞. The presence of disorder results in destruction of superconductivity at large U, thus drastically modifying the clean case behaviour. A physical understanding of our findings is obtained by invoking particle-hole asymmetry and the probability distributions of the order parameter and spectral gap.

Nanoplasmonic lattices for ultracold atoms

We propose to use subwavelength confinement of light associated with the near field of plasmonic systems to create nanoscale optical lattices for ultracold atoms. Our approach combines the unique coherence properties of isolated atoms with the subwavelength manipulation and strong light-matter interaction associated with nanoplasmonic systems. It allows one to considerably increase the energy scales in the realization of Hubbard models and to engineer effective long-range interactions in coherent and dissipative many-body dynamics. Realistic imperfections and potential applications are discussed.

Features of the dielectric permittivity of the Coulomb system and the true dielectric state

Based on the linear response theory and the diagram technique of the perturbation theory, the correlation between the homogeneous and isotropic Coulomb system permittivity features caused by the nonzero static conductivity and the effects of external electrostatic field screening is determined. The results obtained can be used to study the metal-dielectric transition at zero temperature beyond the scope of the adiabatic approximation for nuclei. It is shown that at the critical point the matter consisting of electrons and nuclei of the same type is in the "true" dielectric state characterized by the zero static conductivity and the absence of screening of the weak electrostatic field.

The effects of disorder and interactions on the Anderson transition in doped graphene

We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we find that the Anderson metal-insulator transition can be introduced by the presence of quenched random disorder. In contrast with the conventional picture of localization, four mobility edges can be observed for the honeycomb lattice with specific disorder strength and impurity concentration. Considering the screening effects of interactions on disorder potentials, the experimental findings of the scale enlargements of puddles can be explained by reviewing the effects of both interactions and disorder.

Dimensionality-driven insulator-metal transition in A-site excess non-stoichiometric perovskites

Coaxing correlated materials to the proximity of the insulator–metal transition region, where electronic wavefunctions transform from localized to itinerant, is currently the subject of intensive research because of the hopes it raises for technological applications and also for its fundamental scientific significance. In general, this tuning is achieved by either chemical doping to introduce charge carriers, or external stimuli to lower the ratio of Coulomb repulsion to bandwidth. In this study, we combine experiment and theory to show that the transition from well-localized insulating states to metallicity in a Ruddlesden-Popper series, La_0.5Sr_n+1−0.5Ti_nO_3n+1, is driven by intercalating an intrinsically insulating SrTiO3 unit, in structural terms, by dimensionality n. This unconventional strategy, which can be understood upon a complex interplay between electron–phonon coupling and electron correlations, opens up a new avenue to obtain metallicity or even superconductivity in oxide superlattices that are normally expected to be insulators.

Many technological applications would benefit from new ways of bringing complex materials near the insulator–metal transition region. The authors induce, in a Lantanum Strontium Titanate, a transition from insulating to metallic behaviour by structural intercalation of intrinsically insulating units, opening new avenues to engineer these materials.

Effects of strong correlations on the disorder-induced zero-bias anomaly in the extended Anderson-Hubbard model

We study the effect of strong correlations on the zero-bias anomaly (ZBA) in disordered interacting systems. We focus on the two-dimensional extended Anderson-Hubbard model (EAHM) on a square lattice. The EAHM has both on-site and nearest-neighbour interactions and randomly chosen site energies. We use a mean-field theory that incorporates strong correlations and treats the disorder potential exactly. We use a simplified atomic-limit approximation for the diagonal inelastic self-energy that becomes exact in the large-disorder limit, and the off-diagonal self-energy is treated within the Hartree-Fock approximation. The validity of these approximations is discussed in detail. We find that strong correlations have a significant effect on the ZBA at half-filling, and enhance the ZBA gap when the interaction is finite ranged.

Critical behavior at the mott-anderson transition: a typical-medium theory perspective

We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of typical-medium theory-the simplest extension of dynamical mean field theory capable of incorporating Anderson localization effects. By making use of previous scaling studies of Anderson impurity models close to the metal-insulator transition, we solve this problem analytically and reveal the dependence of the critical behavior on the particle-hole symmetry. Our main result is that, for sufficiently strong disorder, the Mott-Anderson transition is characterized by a precisely defined two-fluid behavior, in which only a fraction of the electrons undergo a "site selective" Mott localization; the rest become Anderson-localized quasiparticles.

Competition between Anderson localization and antiferromagnetism in correlated lattice fermion systems with disorder

The magnetic ground state phase diagram of the disordered Hubbard model at half-filling is computed in dynamical mean-field theory supplemented with the spin resolved, typical local density of states. The competition between many-body correlations and disorder is found to stabilize paramagnetic and antiferromagnetic metallic phases at weak interactions. Strong disorder leads to Anderson localization of the electrons and suppresses the antiferromagnetic long-range order. Slater and Heisenberg antiferromagnets respond characteristically differently to disorder. The results can be tested with cold fermionic atoms loaded into optical lattices.

Soft hubbard gaps in disordered itinerant models with short-range interaction

We study the Anderson-Hubbard model in the Hartree-Fock approximation and the exact diagonalization under the coexistence of short-range interaction and diagonal disorder. We show that there exist unconventional soft gaps, where the single-particle (SP) density of states (DOS) A follows a scaling in energy E as A(E) proportional, variantexp[-(-gammalog|E-E_{F}|);{d}] irrespective of electron filling and long-range order. Here, d is the spatial dimension, E_{F} the Fermi energy and gamma a nonuniversal constant. We propose a multivalley energy landscape as their origin. Possible experiments to verify the present theory are proposed.

Ferromagnetism and Kondo insulator behavior in the disordered periodic Anderson model

The effect of binary alloy disorder on the ferromagnetic phases of f-electron materials is studied within the periodic Anderson model. We find that disorder in the conduction band can drastically enhance the Curie temperature T{c} due to an increase of the local f moment. The effect may be explained qualitatively and even quantitatively by a simple theoretical ansatz. The emergence of an alloy Kondo insulator at noninteger filling is also pointed out.

Exploiting quantum parallelism to simulate quantum random many-body systems

We present an algorithm that exploits quantum parallelism to simulate randomness in a quantum system. In our scheme, all possible realizations of the random parameters are encoded quantum mechanically in a superposition state of an auxiliary system. We show how our algorithm allows for the efficient simulation of dynamics of quantum random spin chains with known numerical methods. We propose an experimental realization based on atoms in optical lattices in which disorder could be simulated in parallel and in a controlled way through the interaction with another atomic species.

Complexity in Strongly Correlated Electronic Systems

A wide variety of experimental results and theoretical investigations in recent years have convincingly demonstrated that several transition metal oxides and other materials have dominant states that are not spatially homogeneous. This occurs in cases in which several physical interactions-spin, charge, lattice, and/or orbital-are simultaneously active. This phenomenon causes interesting effects, such as colossal magnetoresistance, and it also appears crucial to understand the high-temperature superconductors. The spontaneous emergence of electronic nanometer-scale structures in transition metal oxides, and the existence of many competing states, are properties often associated with complex matter where nonlinearities dominate, such as soft materials and biological systems. This electronic complexity could have potential consequences for applications of correlated electronic materials, because not only charge (semiconducting electronic), or charge and spin (spintronics) are of relevance, but in addition the lattice and orbital degrees of freedom are active, leading to giant responses to small perturbations. Moreover, several metallic and insulating phases compete, increasing the potential for novel behavior.

Coherence of elementary excitations in a disordered electron system

The localization properties of the single-particle and collective electron excitations were investigated in the intentionally disordered GaAs/AlGaAs superlattices by weak-field magnetoresistance and Raman scattering. The localization length of the individual electron was found to be considerably larger than that of the collective excitations. This suggests that the disorder has a weaker effect on the electrons than on their collective motion and that the interaction which gives rise to the collective effects increases localization.