Strong suppression of weak localization in graphene

Defects induce phase transition from dynamic to static rippling in graphene

Two-dimensional (2D) materials display nanoscale dynamic ripples that significantly impact their properties. Defects within the crystal lattice are the elementary building blocks to tailor the material's morphology. While some studies have explored the link between defective structures and rippling dynamics in 2D materials, a comprehensive understanding of this relationship has yet to be achieved. Here, we address this using machine learning-driven molecular dynamics simulations. Specifically, we find that above a critical concentration of defects, free-standing graphene sheets undergo a dynamic transition from freely propagating to static ripples. Our computational approach captures the dynamics with atomic resolution, and reveals that the transition is driven by elastic interactions between defects. The strength of these interactions is found to vary across defect types and we identify a unifying set of principles driving the dynamic-to-static transition in 2D materials. Our work not only rationalizes puzzling experimental results for defective 2D materials, but also paves the way to design two-dimensional devices with tailored rippling dynamics. These insights could lay the foundations for a class of disorder-based catalytic and interfacial materials.

2D versus 3D-Like Electrical Behavior of MXene Thin Films: Insights from Weak Localization in the Role of Thickness, Interflake Coupling and Defects

MXenes stand out from other 2D materials because they combine very good electrical conductivity with hydrophilicity, allowing cost-effective processing as thin films. Therefore, there is a high fundamental interest in unraveling the electronic transport mechanisms at stake in multilayers of the most conducting MXene, Ti3C2Tx. Although weak localization (WL) has been proposed as the dominating low-temperature (LT) transport mechanism in Ti3C2Tx thin films, there have been few attempts to model it quantitatively. In this work, the role of important structural parameters - thickness, interflake coupling, defects - on the dimensionality of the LT transport mechanisms in spin-coated Ti3C2Tx thin films is investigated through LT and magnetic field dependent resistivity measurements. A dimensional crossover from 2D to 3D WL is clearly evidenced when the film thickness exceeds the dephasing length lϕ, estimated here in the 50-100 nm range. 2D WL can be restored by weakening the coupling between adjacent flakes, the intrinsic thickness of which is lower than lϕ, hence acting as parallel 2D conductors. Alternatively, lϕ can be reduced down to the 10 nm range by defects. These results clearly emphasize the ability of WL quantitative study to give deep insights in the physics of electron transport in MXene thin films.

Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

Control over and manipulation of valley physics via ferrovalleytricity is highly desirable for advancing valleytronics. Current research focuses primarily on two-dimensional ferromagnetic systems, while antiferromagnetic counterparts are seldom explored. Here, we present a general mechanism for extending the ferrovalleytricity paradigm to antiferromagnetic lattices to achieve spin control over valley physics. Our symmetry analysis and k·p model reveal that by introducing a Zeeman field aroused by the proximity effect, spin-switchable non-uniform potential is imposed on the two sublattices of an antiferromagnetic lattice. This enables spin control over the anomalous valley Hall effect, thereby realizing ferrovalleytricity. This mechanism is confirmed in a CrBr3-MnPSe3-CrBr3 heterotrilayer from first principles, where the spin-switchable non-uniform Zeeman effect is exerted on two Mn sublattices when the antiferromagnetic MnPSe3 layer is sandwiched between ferromagnetic CrBr3 layers. Such a non-uniform Zeeman effect combined with valley physics guarantees spin control over the anomalous valley Hall effect, i.e., ferrovalleytricity, in the MnPSe3 layer. Our work will shed light on potential applications of valley physics in antiferromagnetic systems.

Aluminum/Graphene Thermal Interface Materials with Positive Temperature Dependence

Graphene is widely used in excellent thermal interface materials (TIMs), thanks to its remarkably high in-plane thermal conductivity (k∥). However, the poor through-plane thermal conductivity (k⊥) limits its further application. Here, we developed a simple in situ growth method to prepare graphene-based thermal interface composites with positively temperature-dependent thermal conductivity, which loaded aluminum (Al) nanoparticles onto graphene nanoplatelets (GNPs). To evaluate the variations in thermal performance, we determined the thermal diffusivity and specific heat capacity of the composites using a laser-flash analyzer and a differential scanning calorimeter, respectively. The Al nanoparticles act as bridges between the nanoplatelets, enhancing the k⊥ of the 1.3-Al/GNPs composite to 11.70 W·m-1·K-1 at 25 °C. Even more remarkably, those nanoparticles led to a unique increase in k⊥ with temperature, reaching 20.93 W·m-1·K-1 at 100 °C. Additionally, we conducted an in-depth investigation of the thermal conductivity mechanism of the Al/GNPs composites. The exceptional heat transport property enabled the composites to exhibit a superior heat dissipation performance in simulated practical applications. This work provides valuable insights into utilizing graphene in composites with Al nanoparticles, which have special thermal conductivity properties, and offers a promising pathway to enhance the k⊥ of graphene-based TIMs.

Quantum Nature of Charge Transport in Inkjet-Printed Graphene Revealed in High Magnetic Fields up to 60T

Inkjet-printing of graphene, iGr, provides an alternative route for the fabrication of highly conductive and flexible graphene films for use in devices. However, the contribution of quantum phenomena associated with 2D single layer graphene, SLG, to the charge transport in iGr is yet to be explored. Here, the first magneto-transport study of iGr in high magnetic fields up to 60 T is presented. The observed quantum phenomena, such as weak localization and negative magnetoresistance, are strongly affected by the thickness of the iGr film and can be explained by a combination of intra- and inter-flake classical and quantum charge transport. The quantum nature of carrier transport in iGr is revealed using temperature, electric field, and magnetic field dependences of the iGr conductivity. These results are relevant for the exploitation of inkjet deposition of graphene, which is of particular interest for additive manufacturing and 3D printing of flexible and wearable electronics. It is shown that printed nanostructures enable ensemble averaging of quantum interference phenomena within a single device, thereby facilitating comparison between experiment and underlying statistical models of electron transport.

Mass Inversion at the Lifshitz Transition in Monolayer Graphene by Diffusive, High-Density, On-Chip Doping

Experimental setups for charge transport measurements are typically not compatible with the ultrahigh vacuum conditions for chemical doping, limiting the charge carrier density that can be investigated by transport methods. Field-effect methods, including dielectric gating and ionic liquid gating, achieve too low a carrier density to induce electronic phase transitions. To bridge this gap, we developed an integrated flip-chip method to dope graphene by alkali vapor in the diffusive regime, suitable for charge transport measurements at ultrahigh charge carrier density. We introduce a cesium droplet into a sealed cavity filled with inert gas to dope a monolayer graphene sample by the process of cesium atom diffusion, adsorption, and ionization at the graphene surface, with doping beyond an electron density of 4.7 × 1014 cm-2 monitored by operando Hall measurement. The sealed assembly is stable against oxidation, enabling measurement of charge transport versus temperature and magnetic field. Cyclotron mass inversion is observed via the Hall effect, indicative of the change in Fermi surface geometry associated with the Liftshitz transition at the hyperbolic M point of monolayer graphene. The transparent quartz substrate also functions as an optical window, enabling nonresonant Raman scattering. Our findings show that chemical doping, hitherto restricted to ultrahigh vacuum, can be applied in a diffusive regime at ambient pressure in an inert gas environment and thus enable charge transport studies in standard cryogenic environments.

Magnetoresistance properties in nickel-catalyzed, air-stable, uniform, and transfer-free graphene

A transfer-free graphene with high magnetoresistance (MR) and air stability has been synthesized using nickel-catalyzed atmospheric pressure chemical vapor deposition. The Raman spectrum and Raman mapping reveal the monolayer structure of the transfer-free graphene, which has low defect density, high uniformity, and high coverage (>90%). The temperature-dependent (from 5 to 300 K) current-voltage (I-V) and resistance measurements are performed, showing the semiconductor properties of the transfer-free graphene. Moreover, the MR of the transfer-free graphene has been measured over a wide temperature range (5-300 K) under a magnetic field of 0 to 1 T. As a result of the Lorentz force dominating above 30 K, the transfer-free graphene exhibits positive MR values, reaching ∼8.7% at 300 K under a magnetic field (1 Tesla). On the other hand, MR values are negative below 30 K due to the predominance of the weak localization effect. Furthermore, the temperature-dependent MR values of transfer-free graphene are almost identical with and without a vacuum annealing process, indicating that there are low density of defects and impurities after graphene fabrication processes so as to apply in air-stable sensor applications. This study opens avenues to develop 2D nanomaterial-based sensors for commercial applications in future devices.

Spin-dependent properties of optical modes guided by adiabatic trapping potentials in photonic Dirac metasurfaces

The Dirac-like dispersion in photonic systems makes it possible to mimic the dispersion of relativistic spin-1/2 particles, which led to the development of the concept of photonic topological insulators. Despite recent demonstrations of various topological photonic phases, the full potential offered by Dirac photonic systems, specifically their ability to emulate the spin degree of freedom-referred to as pseudo-spin-beyond topological boundary modes has remained underexplored. Here we demonstrate that photonic Dirac metasurfaces with smooth one-dimensional trapping gauge potentials serve as effective waveguides with modes carrying pseudo-spin. We show that spatially varying gauge potentials act unevenly on the two pseudo-spins due to their different field distributions, which enables control of guided modes by their spin, a property that is unattainable with conventional optical waveguides. Silicon nanophotonic metasurfaces are used to experimentally confirm the properties of these guided modes and reveal their distinct spin-dependent radiative character; modes of opposite pseudo-spin exhibit disparate radiative lifetimes and couple differently to incident light. The spin-dependent field distributions and radiative lifetimes of their guided modes indicate that photonic Dirac metasurfaces could be used for spin-multiplexing, controlling the characteristics of optical guided modes, and tuning light-matter interactions with photonic pseudo-spins.

Determining spin-orbit coupling in graphene by quasiparticle interference imaging

Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backscattering in graphene-on-WSe₂ heterostructures can be used to probe SOC and to determine its strength quantitatively, by imaging quasiparticle interference with a scanning tunneling microscope. A detailed theoretical analysis of the Fourier transform of quasiparticle interference images reveals that the induced SOC consists of a valley-Zeeman (λ_vZ ≈ 2 meV) and a Rashba (λ_R ≈ 15 meV) term, one order of magnitude larger than what theory predicts, but in excellent agreement with earlier transport experiments. The validity of our analysis is confirmed by measurements on a 30 degree twist angle heterostructure that exhibits no backscattering, as expected from symmetry considerations. Our results demonstrate a viable strategy to determine SOC quantitatively by imaging quasiparticle interference.

Characterization and Manipulation of Intervalley Scattering Induced by an Individual Monovacancy in Graphene

Intervalley scattering involves microscopic processes that electrons are scattered by atomic-scale defects on the nanoscale. Although central to our understanding of electronic properties of materials, direct characterization and manipulation of range and strength of the intervalley scattering induced by an individual atomic defect have so far been elusive. Using scanning tunneling microscope, we visualize and control intervalley scattering from an individual monovacancy in graphene. By directly imaging the affected range of monovacancy-induced intervalley scattering, we demonstrate that it is inversely proportional to the energy; i.e., it is proportional to the wavelength of massless Dirac fermions. A giant electron-hole asymmetry of the intervalley scattering is observed because the monovacancy is charged. By further charging the monovacancy, the bended electronic potential around the monovacancy softens the scattering potential, which, consequently, suppresses the intervalley scattering of the monovacancy.

Modulation of Spin Dynamics in 2D Transition-Metal Dichalcogenide via Strain-Driven Symmetry Breaking

Transition metal dichalcogenides (TMDs) possess intrinsic spin-orbit interaction (SOI) with high potential to be exploited for various quantum phenomena. SOI allows the manipulation of spin degree of freedom by controlling the carrier's orbital motion via mechanical strain. Here, strain modulated spin dynamics in bilayer MoS₂ field-effect transistors (FETs) fabricated on crested substrates are demonstrated. Weak antilocalization (WAL) is observed at moderate carrier concentrations, indicating additional spin relaxation path caused by strain fields arising from substrate crests. The spin lifetime is found to be inversely proportional to the momentum relaxation time, which follows the Dyakonov-Perel spin relaxation mechanism. Moreover, the spin-orbit splitting is obtained as 37.5 ± 1.4 meV, an order of magnitude larger than the theoretical prediction for monolayer MoS₂ , suggesting the strain enhanced spin-lattice coupling. The work demonstrates strain engineering as a promising approach to manipulate spin degree of freedom toward new functional quantum devices.

Resonant Scattering in Proximity-Coupled Graphene/Superconducting Mo2 C Heterostructures

The realization of high-quality heterostructures or hybrids of graphene and superconductor is crucial for exploring various novel quantum phenomena and devices engineering. Here, the electronic transport on directly grown high-quality graphene/Mo2 C vertical heterostructures with clean and sharp interface is comprehensively investigated. Owing to the strong interface coupling, the graphene layer feels an effective confinement potential well imposed by two-dimensional (2D) Mo2 C crystal. Employing cross junction device geometry, a series of resonance-like magnetoresistance peaks are observed at low temperatures. The temperature and gate voltage dependences of the observed resonance peaks give evidence for geometric resonance of electron cyclotron orbits with the formed potential well. Moreover, it is found that both the amplitude of resonance peaks and conductance fluctuation exhibit different temperature-dependent behaviors below the superconducting transition temperature of 2D Mo2 C, indicating the correlation of quantum fluctuations and superconductivity. This study offers a promising route toward integrating graphene with 2D superconducting materials, and establishes a new way to investigate the interplay of massless Dirac fermion and superconductivity based on graphene/2D superconductor vertical heterostructures.

Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies

As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum-enabled elements in superconducting qubits, semiconductor nanostructures, or sensing devices, but also the peripheral circuitry. The phase coherence of the electronic wave function in these emerging materials will be crucial when incorporated in the quantum architecture. The loss of phase memory, or dephasing, occurs when a quantum system interacts with the fluctuations in the local electromagnetic environment, which manifests in "noise" in the electrical conductivity. Hence, characterizing these materials and devices therefrom, for quantum applications, requires evaluation of both dephasing and noise, although there are very few materials where these properties are investigated simultaneously. Here, the available data on magnetotransport and low-frequency fluctuations in electrical conductivity are reviewed to benchmark the dephasing and noise. The focus is on new materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise in these systems are elaborated, the impact of both intrinsic and extrinsic parameters from materials synthesis and devices realization are evaluated, and it is hoped that a clearer pathway to design and characterize both material and devices for quantum applications is thus provided.

Direct Observation of Global Elastic Intervalley Scattering Induced by Impurities on Graphene

The scattering process induced by impurities in graphene plays a key role in transport properties. Especially, the disorder impurities can drive the ordered state with a hexagonal superlattice on graphene by electron-mediated interaction at a transition temperature. Using angle-resolved photoemission spectroscopy (ARPES), we reveal that the epitaxial monolayer and bilayer graphene with various impurities display global elastic intervalley scattering and quantum interference below the critical temperature (34 K), which leads to a set of new folded Dirac cones at the Brillouin-zone center by mixing two inequivalent Dirac cones. The Dirac electrons generated from intervalley scattering without chirality can be due to the breaking of the sublattice symmetry. In addition, the temperature-dependent ARPES measurements indicate the thermal damping of quantum interference patterns from Dirac electron scattering on impurities. Our results demonstrate that the electron scattering and interference induced by impurities can completely modulate the Dirac bands of graphene.

Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime

We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures >  ~ 40 K, whereas it becomes positive for low temperatures ≤  ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO₂, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K.

Twist dependent magneto-optical response in twisted bilayer graphene

By employing a linearised Boltzmann equation, we calculate the magneto-optical properties of twisted bilayer graphene using non-magnetic wave functions. Both transverse and longitudinal responses are calculated up to the second order in applied magnetic field with their twist angle and Fermi level dependence examined. We find that increasing the twist angle increases the transverse metallic response so long as the Fermi level remains below the upper conduction band. Interlayer transitions provide an appreciable enhancement when the Fermi level traverses the gap between the two conduction bands. Interlayer transitions are also responsible for a nonzero anomalous Hall conductivity in this model. As the Fermi level moves towards zero, the longitudinal response begins to dominate and a highly anisotropic negative magneto-resistance is observed.

Negative Magnetoresistance in the GeSn Strip

Discovery of topological materials associated with an exotic phenomenon has attracted increasing attention in modern condensed matter physics. A typical example is the chiral anomaly proposed in the Dirac or Weyl semimetals. In addition to the well-known topological semimetals, such as TaAs and Na₃Bi, recently, group IV GeSn alloys were also proposed to be Dirac semimetals in theory, demonstrating potential applications compatible with current Si-based technology. Here, we report the observation of large negative magnetoresistance (MR) that is sensitive to the orientation of the magnetic and electric field in the GeSn strip. This negative MR emerges only when the applied magnetic field is parallel to the electric field, which is consistent with the chiral anomaly in topological semimetals. This work paves a new way toward exploring the negative MR behavior and underlying mechanism in a new class of Dirac semimetals.

Magnetotransport in hybrid InSe/monolayer graphene on SiC

The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron-electron (e-e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope R _H = δR _xy /δB = δρ _xy /δB can be used to probe e-e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron-phonon scattering. Nevertheless, one needs to be certain that the change of R _H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.

Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.

Negative-curvature spacetime solutions for graphene

We provide a detailed analysis of the electronic properties of graphene-like materials with charge carriers living on a curved substrate, focusing in particular on constant negative-curvature spacetime. An explicit parametrization is also worked out in the remarkable case of Beltrami geometry, with an analytic solution for the pseudoparticles modes living on the curved bidimensional surface. We will then exploit the correspondent massless Dirac description, to determine how it affects the sample local density of states.

Metal Nanoparticles for Electrochemical Sensing: Progress and Challenges in the Clinical Transition of Point-of-Care Testing

With the rise in public health awareness, research on point-of-care testing (POCT) has significantly advanced. Electrochemical biosensors (ECBs) are one of the most promising candidates for the future of POCT due to their quick and accurate response, ease of operation, and cost effectiveness. This review focuses on the use of metal nanoparticles (MNPs) for fabricating ECBs that has a potential to be used for POCT. The field has expanded remarkably from its initial enzymatic and immunosensor-based setups. This review provides a concise categorization of the ECBs to allow for a better understanding of the development process. The influence of structural aspects of MNPs in biocompatibility and effective sensor design has been explored. The advances in MNP-based ECBs for the detection of some of the most prominent cancer biomarkers (carcinoembryonic antigen (CEA), cancer antigen 125 (CA125), Herceptin-2 (HER2), etc.) and small biomolecules (glucose, dopamine, hydrogen peroxide, etc.) have been discussed in detail. Additionally, the novel coronavirus (2019-nCoV) ECBs have been briefly discussed. Beyond that, the limitations and challenges that ECBs face in clinical applications are examined and possible pathways for overcoming these limitations are discussed.

Weak localization in graphene sandwiched by aligned h-BN flakes

Charge carriers in graphene exhibit distinct characteristics from those in other two-dimensional materials because of their chiral nature. Additionally, multiple Dirac cones that emerge in graphene superlattices have been regarded as an interesting point in condensed-matter physics in recent years. Here, we report an investigation of the magneto-conductance in graphene encapsulated on the top and bottom by aligned h-BN. The bottom h-BN is precisely aligned with graphene, while the top h-BN is rotated a very small angle relative to it. Such a heterostructure could spoil the commensurate state existing in precisely aligned graphene while the giant moiré superlattice remains. A clear signature of weak localization and weak anti-localization is observed at multiple Dirac cones. Both the weak (anti)localization and the universal conductance fluctuations exhibit strong dependencies on the carrier density, temperature and channel length. This artificial heterostructure allows one to explore quantum interference in graphene with a wide spectrum of electronic properties.

Mobility Enhancement in Graphene by in situ Reduction of Random Strain Fluctuations

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When ∼0.2% of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by ∼35% is observed while the residual doping reduces by ∼39%. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

We report room temperature Hall mobility measurements, low temperature magnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO₂/Si substrates. We found that thermal annealing in vacuum at 450 °C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 Ω sq^-1 after annealing, and are n-type doped, with carrier concentrations in the low 10²⁰ cm^-3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm² V^-1 s^-1 for a 480 nm-thick film printed on SiO₂/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1-1. These results represent the first in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.

Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence

The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due to weak localization and electron interactions. A simple rescaling of these data, free of any adjustable parameters, shows that this anomaly exhibits a universal, temperature- (T) independent form. According to this, the differential conductance is approximately constant at small voltages (V < kBT/e), while at larger voltages it increases logarithmically with the applied bias. For theoretical insight into the origins of this behaviour, which is inconsistent with electron heating, we formulate a model for weak-localization in the presence of nonequilibrium transport. According to this model, the applied voltage causes unavoidable dispersion decoherence, which arises as diffusing electron partial waves, with a spread of energies defined by the value of the applied voltage, gradually decohere with one another as they diffuse through the system. The decoherence yields a universal scaling of the conductance as a function of eV/kBT, with a logarithmic variation for eV/kBT > 1, variations in accordance with the results of experiment. Our theoretical description of nonequilibrium transport in the presence of this source of decoherence exhibits strong similarities with the results of experiment, including the aforementioned rescaling of the conductance and its logarithmic variation as a function of the applied voltage.

Robust weak antilocalization due to spin-orbital entanglement in Dirac material Sr3SnO

The presence of both inversion (P) and time-reversal (T) symmetries in solids leads to a double degeneracy of the electronic bands (Kramers degeneracy). By lifting the degeneracy, spin textures manifest themselves in momentum space, as in topological insulators or in strong Rashba materials. The existence of spin textures with Kramers degeneracy, however, is difficult to observe directly. Here, we use quantum interference measurements to provide evidence for the existence of hidden entanglement between spin and momentum in the antiperovskite-type Dirac material Sr3SnO. We find robust weak antilocalization (WAL) independent of the position of EF. The observed WAL is fitted using a single interference channel at low doping, which implies that the different Dirac valleys are mixed by disorder. Notably, this mixing does not suppress WAL, suggesting contrasting interference physics compared to graphene. We identify scattering among axially spin-momentum locked states as a key process that leads to a spin-orbital entanglement.

Electric-Controlled Valley Pseudomagnetoresistance in Graphene with Y-Shaped Kekulé Lattice Distortion

We propose a new method for regulating valley pseudomagnetoresistance in ballistic graphene-based valley field-effect transistors by taking into account the Y-shaped Kekulé lattice distortion and electric barrier. The device involves valley injection and valley detection by ferromagnetic-strain source and drain. The valley manipulation in the channel is achieved via the Y-shaped Kekulé lattice distortion and electric barrier. The central mechanism of these devices lies on Y-shaped Kekulé lattice distortion in graphene can induce a valley precession, thus controlling the valley orientation of channel electrons and hence the current collected at the drain. We found that the tuning external bias voltage makes the valley pseudomagnetoresistance oscillate between positive and negative values and colossal tunneling valley pseudomagnetoresistance of over 30,000% can be achieved. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing.

Elucidating Charge Transport Mechanisms in Cellulose-Stabilized Graphene Inks

Solution-processed graphene inks that use ethyl cellulose as a polymer stabilizer are blade-coated into large-area thin films. Following blade-coating, the graphene thin films are cured to pyrolyze the cellulosic polymer, leaving behind an sp2-rich amorphous carbon residue that serves as a binder in addition to facilitating charge transport between graphene flakes. Systematic charge transport measurements, including temperature-dependent Hall effect and non-contact microwave resonant cavity characterization, reveal that the resulting electrically percolating graphene thin films possess high mobility (≈ 160 cm2 V-1 s-1), low energy gap, and thermally activated charge transport, which develop weak localization behavior at cryogenic temperatures.

Tunable three-way topological energy-splitter

Strategically combining four structured domains creates the first ever three-way topological energy-splitter; remarkably, this is only possible using a square, or rectangular, lattice, and not the graphene-like structures more commonly used in valleytronics. To achieve this effect, the two mirror symmetries, present within all fully-symmetric square structures, are broken; this leads to two nondistinct interfaces upon which valley-Hall states reside. These interfaces are related to each other via the time-reversal operator and it is this subtlety that allows us to ignite the third outgoing lead. The geometrical construction of our structured medium allows for the three-way splitter to be adiabatically converted into a wave steerer around sharp bends. Due to the tunability of the energies directionality by geometry, our results have far-reaching implications for applications such as beam-splitters, switches and filters across wave physics.

Observation of giant spin–orbit interaction in graphene and heavy metal heterostructures

Graphene is a promising material demonstrating some interesting phenomena such as the spin Hall effect, bipolar transistor effect, and non-trivial topological states. However, graphene has an intrinsically small spin–orbit interaction (SOI), making it difficult to apply in spintronic devices. The electronic band structure of graphene makes it possible to develop a systematic method to enhance SOI extrinsically. In this study, we designed a graphene field-effect transistor with a Pb layer intercalated between graphene (Gr) and Au layers and studied the effect on the strength of the SOI. The SOI in our system was significantly increased to 80 meV, which led to a giant non-local signal (∼180 Ω) at room temperature due to the spin Hall effect. Further, we extract key parameters of spin transport from the length and width dependence of non-local measurement. To support these findings, we also measured the temperature and gate-dependent weak localization (WL) effect. We obtained the magnitude of the SOI and spin relaxation time of Gr via quantitative analysis of WL. The SOI magnitudes estimated from the non-local signal and the WL effect are close in value. The enhancement of the SOI of Gr at room temperature is a potential simple manipulation method to explore the use of this material for spin-based applications.

We used Pb as an intercalated layer between the graphene and Au and measured the spin–orbit interaction in local and non-local measurement configurations.

Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe2

Due to the nontrivial topological band structure in type II Weyl semi-metal tungsten ditelluride (WTe₂), unconventional properties may emerge in its superconducting phase. While realizing intrinsic superconductivity has been challenging in the type II Weyl semi-metal WTe₂, the proximity effect may open an avenue for the realization of superconductivity. Here, we report the observation of proximity-induced superconductivity with a long coherence length along the c axis in WTe₂ thin flakes based on a WTe₂/NbSe₂ van der Waals heterostructure. Interestingly, we also observe anomalous oscillations of the differential resistance during the transition from the superconducting to the normal state. Theoretical calculations show excellent agreement with experimental results, revealing that such a subgap anomaly is the intrinsic property of WTe₂ in superconducting state induced by the proximity effect. Our findings enrich the understanding of the superconducting phase of type II Weyl semi-metals and pave the way for their future applications in topological quantum computing.

Landau Quantization of a Narrow Doubly-Folded Wrinkle in Monolayer Graphene

Folding can be an effective way to tailor the electronic properties of graphene and has attracted wide study interest in finding its novel properties. Here we present the experimental characterizations of the structural and electronic properties of a narrow graphene wrinkle on a SiO₂/Si substrate using scanning tunneling microscopy/spectroscopy. Pronounced and nearly equally separated conductance peaks are observed in the d I/d V spectra of the wrinkle. We attribute these peaks to pseudo-Landau levels (PLLs) that are caused by a gradient-strain-induced pseudomagnetic field up to about 42 T in the narrow wrinkle. The introduction of the gradient strain and thus the pseudomagnetic field can be ascribed to the lattice deformation. A doubly-folded structure of the wrinkle is suggested. Our density functional theory calculations show that the band structure of the doubly folded graphene wrinkle has a parabolic dispersion, which can well explain the equally separated PLLs. The effective mass of carriers is obtained to be about 0.02 m_e ( m_e: the rest mass of electron), and interestingly, it is revealed that there exists valley polarization in the wrinkle. Such properties of the strained doubly folded wrinkle may provide a platform to explore some exciting phenomena in graphene, like zero-field quantum valley Hall effect.

Structure of graphene and its disorders: a review

Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.

Low-field magnetotransport in graphene cavity devices

Confinement and edge structures are known to play significant roles in the electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.

Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties

Silicon and graphene are two wonder materials, and their hybrid heterostructures are expected to be very interesting fundamentally and practically. In the present study, by adopting fast dry transfer and ultra-high vacuum annealing, atomically flat monolayer graphene is successfully prepared on the chemically active Si(111) substrate. More importantly, the graphene overlayer largely maintains its intrinsic electronic properties, as validated by the results of the energy-dependent electronic transparency, Dirac point observation and quantum coherence characteristics, and further confirmed by first-principles calculations. The intrinsic properties of graphene are retained up to 1030 K. The system of atomically flat and thermally stable graphene on a chemically active silicon surface with preserved inherent characteristics renders the graphene/silicon hybrid a promising system in the design of high-performance devices and the exploitation of interfacial topological quantum effects.

Relativistic quantum chaos-An emergent interdisciplinary field

Quantum chaos is referred to as the study of quantum manifestations or fingerprints of classical chaos. A vast majority of the studies were for nonrelativistic quantum systems described by the Schrödinger equation. Recent years have witnessed a rapid development of Dirac materials such as graphene and topological insulators, which are described by the Dirac equation in relativistic quantum mechanics. A new field has thus emerged: relativistic quantum chaos. This Tutorial aims to introduce this field to the scientific community. Topics covered include scarring, chaotic scattering and transport, chaos regularized resonant tunneling, superpersistent currents, and energy level statistics-all in the relativistic quantum regime. As Dirac materials have the potential to revolutionize solid-state electronic and spintronic devices, a good understanding of the interplay between chaos and relativistic quantum mechanics may lead to novel design principles and methodologies to enhance device performance.

Weak antilocalization effect in exfoliated black phosphorus revealed by temperature- and angle-dependent magnetoconductivity

Recently, there have increasingly been debates on whether there exists a surface resonance state (SRS) in black phosphorus (BP), as suggested by recent angle-resolved photoemission spectroscopy results. To resolve this issue, we have performed temperature- and angle-dependent magnetoconductivity measurements on exfoliated, high-quality BP single crystals. A pronounced weak-antilocalization (WAL) effect was observed within a narrow temperature range of 8-16 K, with the electrical current flowing parallel to the cleaved ac-plane (along the a- or c-axis) and the magnetic field along the b-axis. The angle-dependent magnetoconductivity and the Hikami-Larkin-Nagaoka model-fitted results have revealed that the observed WAL effect shows surface-bulk coherent features, which supports the existence of SRS in BP.

Phonon thermal transport in a class of graphene allotropes from first principles

Utilizing first principle calculations combined with the phonon Boltzman transport equation (PBTE), we systematically investigate the phonon thermal transport properties of α, β and γ graphyne, a class of graphene allotropes.

Non-covalent interactions for carbonaceous materials: impacts of doping, curving and their combination

Non-covalent interactions and their influencing factors are addressed after studying the binding of ion pairs with graphene (doped, curved and combination).

Observation of Anomalous Resistance Behavior in Bilayer Graphene

Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inter-scattering can mimic the Coulomb scattering but is strongly dependent on temperature. The observed behavior is consistent with the theoretical prediction that charged impurities are the dominant scatters in bilayer graphene. The resistance increase with increasing perpendicular magnetic field strongly supports the postulate that magnetic field induces an excitonic gap in bilayer graphene. Our results reveal that the relative change of resistance induced by magnetic field in the bilayer graphene shows an anomalous thermally activated property.

Random Gauge Field Scattering in Monolayer Graphene

Strain-induced lattice deformation affects electron hopping between the atoms. This effectively gives rise to a gauge field which impacts on the charge transport. In graphene, such gauge field is associated with a vector potential which mimics that of a magnetic field. Understanding the impact of the gauge field on charge transport is of essential importance for emerging topics including straintronics and valleytronics in two-dimensional materials. While extensive theoretical works have been carried out over the past decade, experimental progress has been largely limited to local probe and optical studies. Experimental charge transport study has been baffled by the challenge in creating an effective and independent tuning knob of strain without compromising the quality of graphene. Here we studied high quality suspended graphene field effect transistors fabricated on flexible Polyimide substrates. Applying uniaxial strain by bending the substrate, we observed a strain-induced resistivity with power-law carrier density dependence. The power factor is found to be correlated with the surface fractal dimension of the rippled graphene, in good agreement with the random gauge field scattering theory. Both phase coherent transport and magnetotransport properties are found to be strain-dependent, which can be understood in terms of a strain-tunable disorder.

Substantially Enhancing Quantum Coherence of Electrons in Graphene via Electron-Plasmon Coupling

The interplays between different quasiparticles in solids lay the foundation for a wide spectrum of intriguing quantum effects, yet how the collective plasmon excitations affect the quantum transport of electrons remains largely unexplored. Here we provide the first demonstration that when the electron-plasmon coupling is introduced, the quantum coherence of electrons in graphene is substantially enhanced with the quantum coherence length almost tripled. We further develop a microscopic model to interpret the striking observations, emphasizing the vital role of the graphene plasmons in suppressing electron-electron dephasing. The novel and transformative concept of plasmon-enhanced quantum coherence sheds new insight into interquasiparticle interactions, and further extends a new dimension to exploit nontrivial quantum phenomena and devices in solid systems.

Valley filter and valve effect by strong electrostatic potentials in graphene

We report a theoretical study on the valley-filter and valley-valve effects in the monolayer graphene system by using electrostatic potentials, which are assumed to be electrically controllable. Based on a lattice model, we find that a single extremely strong electrostatic-potential barrier, with its strength exceeding the hopping energy of electrons, will significantly block one valley but allow the opposite valley flowing in the system, and this is dependent on the sign of the potential barrier as well as the flowing direction of electrons. In a valley-valve device composed of two independent potential barriers, the valley-valve efficiency can even amount to 100% that the electronic current is entirely prohibited or allowed by reversing the sign of one of potential barriers. The physics origin is attributed to the valley mixing effect in the strong potential barrier region. Our findings provide a simple electric way of controlling the valley transport in the monolayer graphene system.