Tuning the growth properties of Ge quantum dot lattices in amorphous oxides by matrix type

Ge/Al and Ge/Si3N4/Al Core/Shell Quantum Dot Lattices in Alumina: Boosting the Spectral Response by Tensile Strain

We investigated the production conditions and optoelectrical properties of thin film material consisting of regularly ordered core/shell Ge/Al and Ge/Si₃N₄/Al quantum dots (QDs) in an alumina matrix. The materials were produced by self-assembled growth achieved by means of multilayer magnetron sputtering deposition. We demonstrated the successful fabrication of well-ordered 3D lattices of Ge/Al and Ge/Si₃N₄/Al core/shell quantum dots with a body-centred tetragonal arrangement within the Al₂O₃ matrix. The addition of shells to the Ge core enables a strong tuning of the optical and electrical properties of the material. An Al shell induces a bandgap shift toward smaller energies, and, in addition, it prevents Ge oxidation. The addition of a thin Si₃N₄ shell induces huge changes in the material spectral response, i.e., in the number of extracted excitons produced by a single photon. It increases both the absolute value and the width of the spectral response. For the best sample, we achieved an enhancement of over 250% of the produced number of excitons in the measured energy range. The observed changes are, as it seems, the consequence of the large tensile strain in Ge QDs which is induced by the Si₃N₄ shell addition and which is measured to be about 3% for the most strained QDs. The tensile strain causes activation of the direct bandgap of germanium, which has a very strong effect on the spectral response of the material.

Contribution of Ex-Situ and In-Situ X-ray Grazing Incidence Scattering Techniques to the Understanding of Quantum Dot Self-Assembly: A Review

Quantum dots are under intense research, given their amazing properties which favor their use in electronics, optoelectronics, energy, medicine and other important applications. For many of these technological applications, quantum dots are used in their ordered self-assembled form, called superlattice. Understanding the mechanism of formation of the superlattices is crucial to designing quantum dots devices with desired properties. Here we review some of the most important findings about the formation of such superlattices that have been derived using grazing incidence scattering techniques (grazing incidence small and wide angle X-ray scattering (GISAXS/GIWAXS)). Acquisition of these structural information is essential to developing some of the most important underlying theories in the field.

Application of GISAXS in the Investigation of Three-Dimensional Lattices of Nanostructures

The application of the grazing-incidence small-angle X-ray scattering (GISAXS) technique for the investigation of three-dimensional lattices of nanostructures is demonstrated. A successful analysis of three-dimensionally ordered nanostructures requires applying a suitable model for the description of the nanostructure ordering. Otherwise, it is possible to get a good agreement between the experimental and the simulated data, but the parameters obtained by fitting may be completely incorrect. In this paper, we theoretically examine systems having different types of nanostructure ordering, and we show how the choice of the correct model for the description of ordering influences the analysis results. Several theoretical models are compared in order to show how to use GISAXS in the investigation of self-assembled arrays of nanoparticles, and also in arrays of nanostructures obtained by ion-beam treatment of thin films or surfaces. All models are supported by experimental data, and the possibilities and limitations of GISAXS for the determination of material structure are discussed.

Influence of Structure on Electronic Charge Transport in 3D Ge Nanowire Networks in an Alumina Matrix

We demonstrate formation of material consisting of three-dimensional Germanium nanowire network embedded in an insulating alumina matrix. A wide range of such nanowire networks is produced using a simple magnetron sputtering deposition process. We are able to vary the network parameters including its geometry as well as the length and width of the nanowires. The charge transport in these materials is shown to be related to the nanowire surface per unit volume of the material, α. For low values of α, transport is characterized by space charge limited conduction and a drift of carriers in the extended states with intermittent trapping-detrapping in the localized states. For large values of α, charge transport occurs through hopping between localized electronic states, similar to observations in disorder-dominated arrays of quantum dots. A crossover between these two mechanisms is observed for the intermediate values of α. Our results are understood in terms of an almost linear scaling of the characteristic trap energy with changes in the nanowire network parameters.

Temperature behaviour of the average size of nanoparticle lattices co-deposited with an amorphous matrix. Analysis of Ge + Al2O3 and Ni + Al2O3 thin films

We theoretically interpret the thermal behaviour of the average radius versus substrate temperature of regular quantum dot/nanocluster arrays formed by sputtering semiconductor/metal atoms with oxide molecules. The analysis relies on a continuum theory for amorphous films with given surface quantities, perturbed by a nanoparticle lattice. An account of the basic thermodynamic contributions is given in terms of force-flux phenomenological coefficients of each phase (Ge, Ni, Al₂O₃). Average radii turn out to be expressible by a characteristic length scale and a dimensionless parameter, which mainly depend upon temperature through diffusion lengths, film pressures and finite-size corrections to interfacial tensions. The numerical agreement is good in both Ge ([Formula: see text]) and Ni ([Formula: see text]) lattices grown at temperatures [Formula: see text]800 K, despite the lower temperature behaviour of quantum dots seeming to suggest further driving forces taking part in such processes.

Influence of stress on the properties of Ge nanocrystals in an SiO2matrix

In this work, self-assembled Ge quantum dot (QD) formation in a dielectric matrix is explored. Of particular interest were their structural and optical properties, in order to understand the stress build-up in such a process and its impact on the material properties during processing. To this end, thin films consisting of (Ge + SiO2)/SiO2multilayers grown by RF magnetron sputtering were deposited at room temperature. Annealing of such films at 873 K in inert N2atmosphere produced, at the position of the Ge-rich SiO2layers, a high lateral density (about 1012 cm−2) of Ge QDs with a good crystallinity. SiO2spacer layers separated the adjacent Ge-rich layers, where the Ge QDs were formed with a diameter of about the size of the (Ge + SiO2) as-deposited layer thickness, and created a good vertical repeatability, confirmed by the appearance of a Bragg sheet in two-dimensional small-angle X-ray scattering patterns. The structural analysis, by wide-angle X-ray diffraction, grazing-incidence small-angle X-ray scattering and transmission electron microscopy, has shown that the described processing of the films induced large compressive stress on the formed QDs. Optical analysis by time-resolved photoluminescence (PL) revealed that the high density of crystalline Ge QDs embedded in the amorphous SiO2matrix produced a strong luminescence in the visible part of the spectrum at 2–2.5 eV photon energy. It is shown that the decay dynamics in this energy range are very fast, and therefore the transitions that create such PL are attributed to matrix defects present in the shell surrounding the Ge QD surface (interface region with the matrix). The measured PL peak, though wide at its half-width, when analysed in consecutive short spectral segments showed the same decay dynamics, suggesting the same mechanism of relaxation.

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.