Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective

Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.

High-Performance Broadband Faraday Rotation Spectroscopy of 2D Materials and Thin Magnetic Films

A Faraday rotation spectroscopy (FRS) technique is presented for measurements on the micrometer scale. Spectral acquisition speeds of about two orders of magnitude faster than state-of-the-art modulation spectroscopy setups are demonstrated. The experimental method is based on charge-coupled-device detection, avoiding speed-limiting components, such as polarization modulators with lock-in amplifiers. At the same time, FRS spectra are obtained with a sensitivity of 20 µrad ( 0.001 ° \[0.001{\bm{^\circ }}\] ) over a broad spectral range (525-800 nm), which is on par with state-of-the-art polarization-modulation techniques. The new measurement and analysis technique also automatically cancels unwanted Faraday rotation backgrounds. Using the setup, Faraday rotation spectroscopy of excitons is performed in a hexagonal boron nitride-encapsulated atomically thin semiconductor WS₂ under magnetic fields of up to 1.4 T at room temperature and liquid helium temperature. An exciton g-factor of -4.4 ± 0.3 is determined at room temperature, and -4.2 ± 0.2 at liquid helium temperature. In addition, FRS and hysteresis loop measurements are performed on a 20 nm thick film of an amorphous magnetic Tb₂₀ Fe₈₀ alloy.

Graphene to Advanced MoS2: A Review of Structure, Synthesis, and Optoelectronic Device Application

In contrast to zero-dimensional (0D), one-dimensional (1D), and even their bulk equivalents, in two-dimensional (2D) layered materials, charge carriers are confined across thickness and are empowered to move across the planes. The features of 2D structures, such as quantum confinement, high absorption coefficient, high surface-to-volume ratio, and tunable bandgap, make them an encouraging contestant in various fields such as electronics, energy storage, catalysis, etc. In this review, we provide a gentle introduction to the 2D family, then a brief description of transition metal dichalcogenides (TMDCs), mainly focusing on MoS2, followed by the crystal structure and synthesis of MoS2, and finally wet chemistry methods. Later on, applications of MoS2 in dye-sensitized, organic, and perovskite solar cells are discussed. MoS2 has impressive optoelectronic properties; due to the fact of its tunable work function, it can be used as a transport layer, buffer layer, and as an absorber layer in heterojunction solar cells. A power conversion efficiency (PCE) of 8.40% as an absorber and 13.3% as carrier transfer layer have been reported for MoS2-based organic and perovskite solar cells, respectively. Moreover, MoS2 is a potential replacement for the platinum counter electrode in dye-sensitized solar cells with a PCE of 7.50%. This review also highlights the incorporation of MoS2 in silicon-based heterostructures where graphene/MoS2/n-Si-based heterojunction solar cell devices exhibit a PCE of 11.1%.