Stoichiometric control of the density of states in PbS colloidal quantum dot solids

Advancing Silver Bismuth Sulfide Quantum Dots for Practical Solar Cell Applications

Colloidal quantum dots (CQDs) show unique properties that distinguish them from their bulk form, the so-called quantum confinement effects. This feature manifests in tunable size-dependent band gaps and discrete energy levels, resulting in distinct optical and electronic properties. The investigation direction of colloidal quantum dots (CQDs) materials has started switching from high-performing materials based on Pb and Cd, which raise concerns regarding their toxicity, to more environmentally friendly compounds, such as AgBiS2. After the first breakthrough in solar cell application in 2016, the development of AgBiS2 QDs has been relatively slow, and many of the fundamental physical and chemical properties of this material are still unknown. Investigating the growth of AgBiS2 QDs is essential to understanding the fundamental properties that can improve this material's performance. This review comprehensively summarizes the synthesis strategies, ligand choice, and solar cell fabrication of AgBiS2 QDs. The development of PbS QDs is also highlighted as the foundation for improving the quality and performance of AgBiS2 QD. Furthermore, we prospectively discuss the future direction of AgBiS2 QD and its use for solar cell applications.

Sn-Doped Zinc Oxide as an Electron Transporting Layer for Enhanced Performance in PbS Quantum Dot Solar Cells

Colloidal PbS quantum dot solar cells (QDSCs) have been primarily demonstrated in n-i-p structures by incorporating a solution-processed ZnO electron transporting layer (ETL). Nevertheless, the inherent energy barrier for the electron extraction at the ZnO/PbS junction along with the defective nature significantly diminishes the performance of the PbS QDSCs. In this study, by employing Sn-doped ZnO (ZTO) ETL, we have tuned the conduction band offset at the junction from spike-type to cliff-type so that the electron extraction barrier can be eliminated and the overall photovoltaic parameters can be enhanced (open-circuit voltage of 0.7 V, fill factor over 70%, and efficiency of 11.3%) as compared with the counterpart with the undoped ZnO ETL. The X-ray photoelectron spectroscopy (XPS) analysis revealed a mitigation of oxygen vacancies in the ZTO ETL of our PbS QDSCs. Our work signifies the importance of Sn doping into the conventional ZnO ETL for the superior electron extraction in PbS QDSCs.

Rapid and large-scale synthesis of MoS2via ultraviolet laser-assisted technology for photodetector applications

Two-dimensional transition metal dichalcogenide (TMDC) thin films have been extensively employed in microelectronics research. Molybdenum disulfide (MoS2), as one of prominent candidates of this class, has been applied in photodetectors, integrated electronic devices, gas sensing, and electrochemical catalysis, owing to its extraordinary optoelectronic, chemical, and mechanical properties. Synthesis of MoS2crystal film is the key to its application. However, the reported technology revealed several drawbacks, containing limited surface area, prolonged high-temperature environment, and unsatisfying crystallinity. In order to enhance the convenience of MoS2applications, there is a pressing need for optimized fabrication technology, which could be quicker, with a large area, with adequate crystallinity and heat-saving. In this work, we presented an ultraviolet laser-assisted synthesis technology, accomplishing rapid growth (with the growth rate of about 40μm s-1) of centimeter-scale MoS2films at room temperature. To achieve this, we self-assembled a displaceable reaction chamber system, coupled with krypton fluoride ultraviolet pulse laser. The laser motion speed and trajectory could be customized in the software, allowing the maskless patterning of crystal films. As application, we exhibited a photodetector with the integration of synthesized MoS2and lead sulfide colloidal quantum dots (PbS CQDs), displaying broadband photodetection from ultraviolet, visible to near-infrared spectrum (365-1550 nm), with the detectivity of 109-1010Jones, and the rising time of 0.2-0.3 s. This work not only demonstrated a high-process-efficiency synthesis of TMDC materials, but also has opened up new opportunities for ultraviolet laser used in optoelectronics.

PbS Quantum Dots Ink with Months-Long Shelf-Lifetime Enabling Scalable and Efficient Short-Wavelength Infrared Photodetectors

The phase-transfer ligand exchange of PbS quantum dots (QDs) has substantially simplified device fabrication giving hope for future industrial exploitation. However, this technique when applied to QDs of large size (>4 nm) gives rise to inks with poor colloidal stability, thus hindering the development of QDs photodetectors in short-wavelength infrared range. Here, it is demonstrated that methylammonium lead iodide ligands can provide sufficient passivation of PbS QDs of size up to 6.7 nm, enabling inks with a minimum of ten-week shelf-life time, as proven by optical absorption and solution-small angle X-ray scattering. Furthermore, the maximum linear electron mobility of 4.7 × 10-2 cm2 V-1 s-1 is measured in field-effect transistors fabricated with fresh inks, while transistors fabricated with the same solution after ten-week storage retain 74% of the average starting electron mobility, demonstrating the outstanding quality both of the fresh and aged inks. Finally, photodetectors fabricated via blade-coating exhibit 76% external quantum efficiency at 1300 nm and 1.8 × 1012 Jones specific detectivity, values comparable with devices fabricated using ink with lower stability and wasteful methods such as spin-coating.

Induced UV photon sensing properties in narrow bandgap CdTe quantum dots through controlling hot electron dynamics

Mn-doped CdTe (Mn-CdTe) quantum dot (QD) as well as quantum dot solid (QD solid) nanostructures are formed and the established structures are confirmed through HR-TEM analysis. The dynamics of charge carriers in both doped & undoped QD and QD solid structures were investigated by transient absorption (TA) spectroscopy. A slow band edge bleach recovery is obtained for Mn-doped CdTe QD and CdTe QD solid systems at room temperature. Additionally, a blue shifted broad bleach behaviour is identified for the Mn-CdTe QD solid system, which is attributed to hot exciton formation in the solid upon photoexcitation with a higher photon energy than the band gap energy (hν > Eg). This noteworthy process of generation of hot excitons and slow charge recombination occurs by means of a synergetic action of the Mn dopant in the host CdTe QD solid system as well as the extended electronic wave function between the coupled QD solid. Apart from the Mn-assisted delayed relaxation of hot electrons in the QD solid, a suppression in dark current as well as a high ION/IOFF ratio of 3203.12 at 1 V is observed in the Mn-CdTe QD-solid based photosensitized device in the visible region. Furthermore, we were able to improve the UV photon harvesting property in a narrow band gap Mn-CdTe QD solid through reducing the higher excited carrier's energy losses.

Approaching Bulk Mobility in PbSe Colloidal Quantum Dots 3D Superlattices

3D superlattices made of colloidal quantum dots are a promising candidate for the next generation of optoelectronic devices as they are expected to exhibit a unique combination of tunable optical properties and coherent electrical transport through minibands. While most of the previous work was performed on 2D arrays, the control over the formation of these systems is lacking, where limited long-range order and energetical disorder have so far hindered the potential of these metamaterials, giving rise to disappointing transport properties. Here, it is reported that nanoscale-level controlled ordering of colloidal quantum dots in 3D and over large areas allows the achievement of outstanding transport properties. The measured electron mobilities are the highest ever reported for a self-assembled solid of fully quantum-confined objects. This ultimately demonstrates that optoelectronic metamaterials with highly tunable optical properties (in this case in the short-wavelength infrared spectral range) and charge mobilities approaching that of bulk semiconductor can be obtained. This finding paves the way toward a new generation of optoelectronic devices.

Organic molecule functionalized lead sulfide hybrid system for energy storage and field dependent polarization performances

A wet chemical route is reported for synthesising organic molecule stabilized lead sulfide nanoparticles. The dielectric capacitance, energy storage performances and field-driven polarization of the organic–inorganic hybrid system are investigated in the form of a device under varying temperature and frequency conditions. The structural analysis confirmed the formation of the monoclinic phase of lead sulfide within the organic network. The band structure of lead sulfide was obtained by density functional theory calculation that supported the semiconductor nature of the material with a direct band gap of 2.27 eV. The dielectric performance of the lead sulfide originated due to the dipolar and the space charge polarization. The energy storage ability of the material was investigated under DC-bias conditions, and the device exhibited the power density values 30 W/g and 340 W/g at 100 Hz and 10 kHz, respectively. The electric field-induced polarization study exhibited a fatigue-free behaviour of the device for 103 cycles with a stable dielectric strength. The study revealed that the lead sulfide-based system has potential in energy storage applications.

Size and Solvation Effects on Electronic and Optical Properties of PbS Quantum Dots

PbS quantum dots (QDs), among the most mature nanocrystals obtained by colloidal chemistry, are promising candidates in optoelectronic applications at various operational frequencies. QD device performances are often determined by charge transport, either carrier injection before photoemission or charge detection after photoabsorption, which is significantly influenced by the dielectric environment. Here, we present the electronic structure and the optical gap of PbS QDs versus size for various solvents calculated using ab initio methods including the many-body perturbation approaches. This study highlights the importance of the dielectric environment, pointing out (1) the non-negligible shift of the electronic structure due to the ground state polarization and (2) a substantial impact on the electronic bandgap. The electron-hole binding energy, which varies largely with the QD size and solvent, is well-described by an electrostatic model. This study reveals the fundamental physics of size and solvation effects, which could be useful to design PbS QD-based optoelectronic devices.

1D Colloidal chains: recent progress from formation to emergent properties and applications

Integrating nanoscale building blocks of low dimensionality (0D; i.e., spheres) into higher dimensional structures endows them and their corresponding materials with emergent properties non-existent or only weakly existent in the individual building blocks. Constructing 1D chains, 2D arrays and 3D superlattices using nanoparticles and colloids therefore continues to be one of the grand goals in colloid and nanomaterial science. Amongst these higher order structures, 1D colloidal chains are of particular interest, as they possess unique anisotropic properties. In recent years, the most relevant advances in 1D colloidal chain research have been made in novel synthetic methodologies and applications. In this review, we first address a comprehensive description of the research progress concerning various synthetic strategies developed to construct 1D colloidal chains. Following this, we highlight the amplified and emergent properties of the resulting materials, originating from the assembly of the individual building blocks and their collective behavior, and discuss relevant applications in advanced materials. In the discussion of synthetic strategies, properties, and applications, particular attention will be paid to overarching concepts, fresh trends, and potential areas of future research. We believe that this comprehensive review will be a driver to guide the interdisciplinary field of 1D colloidal chains, where nanomaterial synthesis, self-assembly, physical property studies, and material applications meet, to a higher level, and open up new research opportunities at the interface of classical disciplines.

Solution Annealing Induces Surface Chemical Reconstruction for High-Efficiency PbS Quantum Dot Solar Cells

Colloidal quantum dots (CQDs) have a large specific surface area and a complex surface structure. Their properties in diverse optoelectronic applications are largely determined by their surface chemistry. Therefore, it is essential to investigate the surface chemistry of CQDs for improving device performance. Herein, we realized an efficient surface chemistry optimization of lead sulfide (PbS) CQDs for photovoltaics by annealing the CQD solution with concentrated lead halide ligands after the conventional solution-phase ligand exchange. During the annealing process, the colloidal solution was used to transfer heat and create a secondary reaction environment, promoting the desorption of electrically insulating oleate ligands as well as the trap-related surface groups (Pb-hydroxyl and oxidized Pb species). This was accompanied by the binding of more conductive lead halide ligands on the CQD surface, eventually achieving a more complete ligand exchange. Furthermore, this strategy also minimized CQD polydispersity and decreased aggregation caused by conventional solution-phase ligand exchange, thereby contributing to yielding CQD films with twofold enhanced carrier mobility and twofold reduced trap-state density compared with those of the control. Based on these merits, the fabricated PbS CQD solar cells showed high efficiency of 11% under ambient conditions. Our strategy opens a novel and effective avenue to obtain high-efficiency CQD solar cells with diverse band gaps, providing meaningful guidance for controlling ligand reactivity and realizing subtly purified CQDs.

Doping Colloidal Quantum Dot Materials and Devices for Photovoltaics

Colloidal semiconductor nanocrystals have generated tremendous interest because of their solution processability and robust tunability. Among such nanocrystals, the colloidal quantum dot (CQD) draws the most attention for its well-known quantum size effects. In the last decade, applications of CQDs have been booming in electronics and optoelectronics, especially in photovoltaics. Electronically doped semiconductors are critical in the fabrication of solar cells, because carefully designed band structures are able to promote efficient charge extraction. Unlike conventional semiconductors, diffusion and ion implantation technologies are not suitable for doping CQDs. Therefore, researchers have creatively developed alternative doping methods for CQD materials and devices. In order to provide a state-of-the-art summary and comprehensive understanding to this research community, we focused on various doping techniques and their applications for photovoltaics and demystify them from different perspectives. By analyzing two classes of CQDs, lead chalcogenide CQDs and perovskite CQDs, we compared different working scenarios of each technique, summarized the development in this field, and raised our own future perspectives.

Solvent Engineering of Colloidal Quantum Dot Inks for Scalable Fabrication of Photovoltaics

Development of colloidal quantum dot (CQD) inks enables single-step spin-coating of compact CQD films of appropriate thickness, enabling the promising performance of CQD photovoltaics (CQDPVs). Today's highest-performing CQD inks rely on volatile n-butylamine (BTA), but it is incompatible with scalable deposition methods since a rapid solvent evaporation results in irregular film thickness with an uneven surface. Here, we present a hybrid solvent system, consisting of BTA and N,N-dimethylformamide, which has a favorable acidity for colloidal stability as well as an appropriate vapor pressure, enabling a stable CQD ink that can be used to fabricate homogeneous, large-area CQD films via spray-coating. CQDPVs fabricated with the CQD ink exhibit suppressed charge recombination as well as fast charge extraction compared with conventional CQD ink-based PVs, achieving an improved power conversion efficiency (PCE) of 12.22% in spin-coated devices and the highest ever reported PCE of 8.84% among spray-coated CQDPVs.

Optical and Magneto-Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals

Controlled insertion of electronic states within the band gap of semiconductor nanocrystals (NCs) is a powerful tool for tuning their physical properties. One compelling example is II-VI NCs incorporating heterovalent coinage metals in which hole capture produces acceptor-bound excitons. To date, the opposite donor-bound exciton scheme has not been realized because of the unavailability of suitable donor dopants. Here, we produce a model system for donor-bound excitons in CdSeS NCs engineered with sulfur vacancies (V_S) that introduce a donor state below the conduction band (CB), resulting in long-lived intragap luminescence. V_S-localized electrons are almost unaffected by trapping, and suppression of thermal quenching boosts the emission efficiency to 85%. Magneto-optical measurements indicate that the V_S are not magnetically coupled to the NC bands and that the polarization properties are determined by the spin of the valence-band photohole, whose spin flip is massively slowed down due to suppressed exchange interaction with the donor-localized electron.

Tuning radiative lifetimes in semiconductor quantum dots

Photonic devices stand to benefit from the development of chromophores with tunable, precisely controlled spontaneous emission lifetimes. Here, we demonstrate a method to continuously tune the radiative emission lifetimes of a class of chromophores by varying the density of electronic states involved in the emission process. In particular, we examined the peculiar composition-dependent electronic structure of copper doped CdZnSe quantum dots. It is shown that the nature and density of electronic states involved with the emission process is a function of copper inclusion level, providing a very direct handle for controlling the spontaneous lifetimes. The spontaneous emission lifetimes are estimated by examining the ratios of emission lifetimes to absolute quantum yields and also measured directly by ultrafast luminescence upconversion experiments. We find excellent agreement between these classes of experiments. This scheme enables us to tune spontaneous emission lifetimes by three orders of magnitude from ∼15 ns to over ∼7 µs, which is unprecedented in existing lumophores.

Exploiting the Lability of Metal Halide Perovskites for Doping Semiconductor Nanocomposites

Cesium lead halides have intrinsically unstable crystal lattices and easily transform within perovskite and nonperovskite structures. In this work, we explore the conversion of the perovskite CsPbBr₃ into Cs₄PbBr₆ in the presence of PbS at 450 °C to produce doped nanocrystal-based composites with embedded Cs₄PbBr₆ nanoprecipitates. We show that PbBr₂ is extracted from CsPbBr₃ and diffuses into the PbS lattice with a consequent increase in the concentration of free charge carriers. This new doping strategy enables the adjustment of the density of charge carriers between 10¹⁹ and 10²⁰ cm^-3, and it may serve as a general strategy for doping other nanocrystal-based semiconductors.

Optimizing Surface Chemistry of PbS Colloidal Quantum Dot for Highly Efficient and Stable Solar Cells via Chemical Binding

The surface chemistry of colloidal quantum dots (CQD) play a crucial role in fabricating highly efficient and stable solar cells. However, as-synthesized PbS CQDs are significantly off-stoichiometric and contain inhomogeneously distributed S and Pb atoms at the surface, which results in undercharged Pb atoms, dangling bonds of S atoms and uncapped sites, thus causing surface trap states. Moreover, conventional ligand exchange processes cannot efficiently eliminate these undesired atom configurations and defect sites. Here, potassium triiodide (KI3) additives are combined with conventional PbX2 matrix ligands to simultaneously eliminate the undercharged Pb species and dangling S sites via reacting with molecular I2 generated from the reversible reaction KI3 ⇌ I2 + KI. Meanwhile, high surface coverage shells on PbS CQDs are built via PbX2 and KI ligands. The implementation of KI3 additives remarkably suppresses the surface trap states and enhances the device stability due to the surface chemistry optimization. The resultant solar cells achieve the best power convention efficiency of 12.1% and retain 94% of its initial efficiency under 20 h continuous operation in air, while the control devices with KI additive deliver an efficiency of 11.0% and retains 87% of their initial efficiency under the same conditions.

Unusual Surface Ligand Doping-Induced p-Type Quantum Dot Solids and Their Application in Solar Cells

Doping quantum dots (QDs) is a problem that has been haunting researchers in the QD research community for years, even though doping techniques have been utilized for decades in conventional semiconductors. For the "self-purification" in colloidal QDs, engineering the surface ligands has emerged as an effective way to alter free carrier concentrations and doping types in colloidal QD solids. Halide-atomic ligands are the most popular ligands in producing PbS QD solids since they provide minimal dot-to-dot distance while maintain low in-gap trap states. However, previously reported halide surface treatment could only produce n-type QD solids. Here, we report the fabrication of p-type PbS QD solids using proton-assisted surface ligand exchange. We unveiled the origin of p-type doing in PbS QD solids, and it came from an unusual surface ligand; the HOH⁺ group formed using NH₄X (X = Cl, Br, I) in methanol. We further fabricated QD solar cells using PbS-NH₄Cl, a p-type QD solid predicted and proved by our theory and experiments. The champion device shows a high power conversion efficiency of 7.49%.

Colloidal Quantum Dot Bulk Heterojunction Solids with Near-Unity Charge Extraction Efficiency

Colloidal quantum dots (CQDs) are of interest for optoelectronic applications owing to their tunable properties and ease of processing. Large-diameter CQDs offer optical response in the infrared (IR), beyond the bandgap of c-Si and perovskites. The absorption coefficient of IR CQDs (≈104 cm-1) entails the need for micrometer-thick films to maximize the absorption of IR light. This exceeds the thickness compatible with the efficient extraction of photogenerated carriers, a fact that limits device performance. Here, CQD bulk heterojunction solids are demonstrated that, with extended carrier transport length, enable efficient IR light harvesting. An in-solution doping strategy for large-diameter CQDs is devised that addresses the complex interplay between (100) facets and doping agents, enabling to control CQD doping, energetic configuration, and size homogeneity. The hetero-offset between n-type CQDs and p-type CQDs is manipulated to drive the transfer of electrons and holes into distinct carrier extraction pathways. This enables to form active layers exceeding thicknesses of 700 nm without compromising open-circuit voltage and fill factor. As a result, >90% charge extraction efficiency across the ultraviolet to IR range (350-1400 nm) is documented.

Rapid Photonic Processing of High-Electron-Mobility PbS Colloidal Quantum Dot Transistors

Recent advances in solution-processable semiconducting colloidal quantum dots (CQDs) have enabled their use in a range of (opto)electronic devices. In most of these studies, device fabrication relied almost exclusively on thermal annealing to remove organic residues and enhance inter-CQD electronic coupling. Despite its widespread use, however, thermal annealing is a lengthy process, while its effectiveness to eliminate organic residues remains limited. Here, we exploit the use of xenon flash lamp sintering to post-treat solution-deposited layers of lead sulfide (PbS) CQDs and their application in n-channel thin-film transistors (TFTs). The process is simple, fast, and highly scalable and allows for efficient removal of organic residues while preserving both quantum confinement and high channel current modulation. Bottom-gate, top-contact PbS CQD TFTs incorporating SiO₂ as the gate dielectric exhibit a maximum electron mobility of 0.2 cm² V^-1 s^-1, a value higher than that of control transistors (≈10^-2 cm² V^-1 s^-1) processed via thermal annealing for 30 min at 120 °C. Replacing SiO₂ with a polymeric dielectric improves the transistor's channel interface, leading to a significant increase in electron mobility to 3.7 cm² V^-1 s^-1. The present work highlights the potential of flash lamp annealing as a promising method for the rapid manufacture of PbS CQD-based (opto)electronic devices and circuits.

A Chemically Orthogonal Hole Transport Layer for Efficient Colloidal Quantum Dot Solar Cells

Colloidal quantum dots (CQDs) are of interest in light of their solution-processing and bandgap tuning. Advances in the performance of CQD optoelectronic devices require fine control over the properties of each layer in the device materials stack. This is particularly challenging in the present best CQD solar cells, since these employ a p-type hole-transport layer (HTL) implemented using 1,2-ethanedithiol (EDT) ligand exchange on top of the CQD active layer. It is established that the high reactivity of EDT causes a severe chemical modification to the active layer that deteriorates charge extraction. By combining elemental mapping with the spatial charge collection efficiency in CQD solar cells, the key materials interface dominating the subpar performance of prior CQD PV devices is demonstrated. This motivates to develop a chemically orthogonal HTL that consists of malonic-acid-crosslinked CQDs. The new crosslinking strategy preserves the surface chemistry of the active layer beneath, and at the same time provides the needed efficient charge extraction. The new HTL enables a 1.4× increase in charge carrier diffusion length in the active layer; and as a result leads to an improvement in power conversion efficiency to 13.0% compared to EDT standard cells (12.2%).

Exclusive Electron Transport in Core@Shell PbTe@PbS Colloidal Semiconductor Nanocrystal Assemblies

Assemblies of colloidal semiconductor nanocrystals (NCs) in the form of thin solid films leverage the size-dependent quantum confinement properties and the wet chemical methods vital for the development of the emerging solution-processable electronics, photonics, and optoelectronics technologies. The ability to control the charge carrier transport in the colloidal NC assemblies is fundamental for altering their electronic and optical properties for the desired applications. Here we demonstrate a strategy to render the solids of narrow-bandgap NC assemblies exclusively electron-transporting by creating a type-II heterojunction via shelling. Electronic transport of molecularly cross-linked PbTe@PbS core@shell NC assemblies is measured using both a conventional solid gate transistor and an electric-double-layer transistor, as well as compared with those of core-only PbTe NCs. In contrast to the ambipolar characteristics demonstrated by many narrow-bandgap NCs, the core@shell NCs exhibit exclusive n-type transport, i.e., drastically suppressed contribution of holes to the overall transport. The PbS shell that forms a type-II heterojunction assists the selective carrier transport by heavy doping of electrons into the PbTe-core conduction level and simultaneously strongly localizes the holes within the NC core valence level. This strongly enhanced n-type transport makes these core@shell NCs suitable for applications where ambipolar characteristics should be actively suppressed, in particular, for thermoelectric and electron-transporting layers in photovoltaic devices.

High Efficiency Mesoscopic Solar Cells Using CsPbI3 Perovskite Quantum Dots Enabled by Chemical Interface Engineering

All-inorganic α-CsPbI₃ perovskite quantum dots (QDs) are attracting great interest as solar cell absorbers due to their appealing light harvesting properties and enhanced stability due to the absence of volatile organic constituents. Moreover, ex situ synthesized QDs significantly reduce the variability of the perovskite layer deposition process. However, the incorporation of α-CsPbI₃ QDs into mesoporous TiO₂ (m-TiO₂) is highly challenging, but these constitute the best performing electron transport materials in state-of-the-art perovskite solar cells. Herein, the m-TiO₂ surface is engineered using an electron-rich cesium-ion containing methyl acetate solution. As one effect of this treatment, the solid-liquid interfacial tension at the TiO₂ surface is reduced and the wettability is improved, facilitating the migration of the QDs into m-TiO₂. As a second effect, Cs⁺ ions passivate the QD surface and promote the charge transfer at the m-TiO₂/QD interface, leading to an enhancement of the electron injection rate by a factor of 3. In combination with an ethanol-environment smoothing route that significantly reduces the surface roughness of the m-TiO₂/QD layer, optimized devices exhibit highly reproducible power conversion efficiencies exceeding 13%. The best cell with an efficiency of 14.32% (reverse scan) reaches a short-circuit current density of 17.77 mA cm^-2, which is an outstanding value for QD-based perovskite solar cells.

Cascade surface modification of colloidal quantum dot inks enables efficient bulk homojunction photovoltaics

Control over carrier type and doping levels in semiconductor materials is key for optoelectronic applications. In colloidal quantum dots (CQDs), these properties can be tuned by surface chemistry modification, but this has so far been accomplished at the expense of reduced surface passivation and compromised colloidal solubility; this has precluded the realization of advanced architectures such as CQD bulk homojunction solids. Here we introduce a cascade surface modification scheme that overcomes these limitations. This strategy provides control over doping and solubility and enables n-type and p-type CQD inks that are fully miscible in the same solvent with complete surface passivation. This enables the realization of homogeneous CQD bulk homojunction films that exhibit a 1.5 times increase in carrier diffusion length compared with the previous best CQD films. As a result, we demonstrate the highest power conversion efficiency (13.3%) reported among CQD solar cells.

Semiconductor nanocrystals for small molecule activation via artificial photosynthesis

The protocol of artificial photosynthesis using semiconductor nanocrystals shines light on green, facile and low-cost small molecule activation to produce solar fuels and value-added chemicals.

Setting Carriers Free: Healing Faulty Interfaces Promotes Delocalization and Transport in Nanocrystal Solids

Superlattices of epitaxially connected nanocrystals (NCs) are model systems to study electronic and optical properties of NC arrays. Using elemental analysis and structural analysis by in situ X-ray fluorescence and grazing-incidence small-angle scattering, respectively, we show that epitaxial superlattices of PbSe NCs keep their structural integrity up to temperatures of 300 °C; an ideal starting point to assess the effect of gentle thermal annealing on the superlattice properties. We find that annealing such superlattices between 75 and 150 °C induces a marked red shift of the NC band-edge transition. In fact, the post-annealing band-edge reflects theoretical predictions on the impact of charge carrier delocalization in these epitaxial superlattices. In addition, we observe a pronounced enhancement of the charge carrier mobility and a reduction of the hopping activation energy after mild annealing. While the superstructure remains intact at these temperatures, structural defect studies through X-ray diffraction indicate that annealing markedly decreases the density of point defects and edge dislocations. This indicates that the connections between NCs in as-synthesized superlattices still form a major source of grain boundaries and defects, which prevent carrier delocalization over multiple NCs and hamper NC-to-NC transport. Overcoming the limitations imposed by interfacial defects is therefore an essential next step in the development of high-quality optoelectronic devices based on NC solids.

Lead Selenide (PbSe) Colloidal Quantum Dot Solar Cells with >10% Efficiency

Low-cost solution-processed lead chalcogenide colloidal quantum dots (CQDs) have garnered great attention in photovoltaic (PV) applications. In particular, lead selenide (PbSe) CQDs are regarded as attractive active absorbers in solar cells due to their high multiple-exciton generation and large exciton Bohr radius. However, their low air stability and occurrence of traps/defects during film formation restrict their further development. Air-stable PbSe CQDs are first synthesized through a cation exchange technique, followed by a solution-phase ligand exchange approach, and finally absorber films are prepared using a one-step spin-coating method. The best PV device fabricated using PbSe CQD inks exhibits a reproducible power conversion efficiency of 10.68%, 16% higher than the previous efficiency record (9.2%). Moreover, the device displays remarkably 40-day storage and 8 h illuminating stability. This novel strategy could provide an alternative route toward the use of PbSe CQDs in low-cost and high-performance infrared optoelectronic devices, such as infrared photodetectors and multijunction solar cells.

Structure and Charge Carrier Dynamics in Colloidal PbS Quantum Dot Solids

The ligand exchange process is a key step in fabrications of quantum dot (QD) optoelectronic devices. In this work, on the basis of grazing incidence X-ray scattering techniques, we find that the ligand exchange process with halide ions changes the PbS QD superlattice from face-centered-cubic to body-centered-cubic stacking, while the QD crystal lattice orientation also changes from preferentially "edge-up" to "corner-up". Thus, the QDs' shape is supposed to be the main factor for the alignment of QDs in close packed solids. Moreover, we tailor the alignment of the close packed solids by thermal treatments and further investigate their inner charge carrier dynamics by pump-probe transient absorption experiments. An overall better structure alignment optimizes the charge carrier hopping rate, as confirmed by the time dependence of the photon bleaching peak shift. The QD solid treated at 100 °C shows the best inner structure alignment with the best charge carrier hopping rate.

Comparing Halide Ligands in PbS Colloidal Quantum Dots for Field-Effect Transistors and Solar Cells

Capping colloidal quantum dots (CQDs) with atomic ligands is a powerful approach to tune their properties and improve the charge carrier transport in CQD solids. Efficient passivation of the CQD surface, which can be achieved with halide ligands, is crucial for application in optoelectronic devices. Heavier halides, i.e., I^- and Br^-, have been thoroughly studied as capping ligands in the last years, but passivation with fluoride ions has not received sufficient consideration. In this work, effective coating of PbS CQDs with fluoride ligands is demonstrated and compared to the results obtained with other halides. The electron mobility in field-effect transistors of PbS CQDs treated with different halides shows an increase with the size of the atomic ligand (from 3.9 × 10^-4 cm²/(V s) for fluoride-treated to 2.1 × 10^-2 cm²/(V s) for iodide-treated), whereas the hole mobility remains unchanged in the range between 1 × 10^-5 cm²/(V s) and 10^-4cm²/(V s). This leads to a relatively more pronounced p-type behavior of the fluoride- and chloride-treated films compared to the iodide-treated ones. Cl^-- and F^--capped PbS CQDs solids were then implemented as p-type layer in solar cells; these devices showed similar performance to those prepared with 1,2-ethanedithiol in the same function. The relatively stronger p-type character of the fluoride- and chloride-treated PbS CQD films broadens the utility of such materials in optoelectronic devices.

Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating

The application of light-emitting field-effect transistors (LEFET) is an elegant way of combining electrical switching and light emission in a single device architecture instead of two. This allows for a higher degree of miniaturization and integration in future optoelectronic applications. Here, we report on a LEFET based on lead sulfide quantum dots processed from solution. Our device shows state-of-the-art electronic behavior and emits near-infrared photons with a quantum yield exceeding 1% when cooled. We furthermore show how LEFETs can be used to simultaneously characterize the optical and electrical material properties on the same device and use this benefit to investigate the charge transport through the quantum dot film.

Multibandgap quantum dot ensembles for solar-matched infrared energy harvesting

As crystalline silicon solar cells approach in efficiency their theoretical limit, strategies are being developed to achieve efficient infrared energy harvesting to augment silicon using solar photons from beyond its 1100 nm absorption edge. Herein we report a strategy that uses multi-bandgap lead sulfide colloidal quantum dot (CQD) ensembles to maximize short-circuit current and open-circuit voltage simultaneously. We engineer the density of states to achieve simultaneously a large quasi-Fermi level splitting and a tailored optical response that matches the infrared solar spectrum. We shape the density of states by selectively introducing larger-bandgap CQDs within a smaller-bandgap CQD population, achieving a 40 meV increase in open-circuit voltage. The near-unity internal quantum efficiency in the optimized multi-bandgap CQD ensemble yielded a maximized photocurrent of 3.7 ± 0.2 mA cm⁻². This provides a record for silicon-filtered power conversion efficiency equal to one power point, a 25% (relative) improvement compared to the best previously-reported results.

Efficient harvest of solar energy beyond the silicon absorption edge of 1100 nm by semiconductor solar cells remains a challenge. Here Sun et al. mix high multi-bandgap lead sulfide colloidal quantum dot ensembles to further increase both short circuit current and open circuit voltage.

Electron Mobility of 24 cm2 V-1 s-1 in PbSe Colloidal-Quantum-Dot Superlattices

Colloidal quantum dots (CQDs) are nanoscale building blocks for bottom-up fabrication of semiconducting solids with tailorable properties beyond the possibilities of bulk materials. Achieving ordered, macroscopic crystal-like assemblies has been in the focus of researchers for years, since it would allow exploitation of the quantum-confinement-based electronic properties with tunable dimensionality. Lead-chalcogenide CQDs show especially strong tendencies to self-organize into 2D superlattices with micrometer-scale order, making the array fabrication fairly simple. However, most studies concentrate on the fundamentals of the assembly process, and none have investigated the electronic properties and their dependence on the nanoscale structure induced by different ligands. Here, it is discussed how different chemical treatments on the initial superlattices affect the nanostructure, the optical, and the electronic-transport properties. Transistors with average two-terminal electron mobilities of 13 cm² V^-1 s^-1 and contactless mobility of 24 cm² V^-1 s^-1 are obtained for small-area superlattice field-effect transistors. Such mobility values are the highest reported for CQD devices wherein the quantum confinement is substantially present and are comparable to those reported for heavy sintering. The considerable mobility with the simultaneous preservation of the optical bandgap displays the vast potential of colloidal QD superlattices for optoelectronic applications.

Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community.

Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules

PbS quantum dots (QDs) are remarkable semiconducting materials, which are compatible with low-cost solution-processed electronic device fabrication. Understanding the doping of these materials is one of the great research interests, as it is a necessary step to improve the device performance as well as to enhance the applicability of this system for diverse optoelectronic applications. Here, we report the efficient doping of the PbS QD films with the use of solution-processable organic molecules. By engineering the energy levels of the donor molecules and the PbS QDs through the use of different cross-linking ligands, we are able to control the characteristics of PbS field-effect transistors (FETs) from ambipolar to strongly n-type. Because the doping promotes trap filling, the charge carrier mobility is improved up to 0.64 cm² V^-1 s^-1, which is the highest mobility reported for low-temperature processed PbS FETs employing SiO₂ as the gate dielectric. The doping also reduces the contact resistance of the devices, which can also explain the origin of the increased mobility.