1
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Dwij V, De B, Kunwar HS, Rana S, Velpula P, Shukla DK, Gupta MK, Mittal R, Pal S, Briscoe J, Sathe VG. Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials. ACS APPLIED MATERIALS & INTERFACES 2024; 16:33752-33762. [PMID: 38902888 DOI: 10.1021/acsami.4c02901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus is highly sought. Here, we show the existence of in-plane polarized subdomains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of nonpolar ferroelastic material indicates that long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration, and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.
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Affiliation(s)
- Vivek Dwij
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Binoy De
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | | | - Sumesh Rana
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Praveen Velpula
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Dinesh K Shukla
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Mayanak Kumar Gupta
- Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - Ranjan Mittal
- Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - Subhajit Pal
- School of Engineering & Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Joe Briscoe
- School of Engineering & Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Vasant G Sathe
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
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2
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Liao C, Wang M, Zhao YJ. Enormous and Tunable Bulk Charge/Spin Photovoltaic Effect in Piezoelectric Binary Materials T-IV-VI and T-V-V. J Phys Chem Lett 2024; 15:6099-6107. [PMID: 38820592 DOI: 10.1021/acs.jpclett.4c01257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/02/2024]
Abstract
Understanding the nonlinear response of light and materials is crucial for fundamental physics and next-generation electronic devices. In this work, we have investigated the second-order nonlinear bulk photovoltaic (BPV) and bulk spin photovoltaic (BSPV) effects in the piezoelectric binary materials T-IV-VI and T-V-V (IV = Ge, Sn; VI = S, Se; and V = P, As, Sb, Bi). The independent nonzero conductivity tensors of charge current are derived for these binaries through the symmetry analysis, along with the mechanism for generating pure spin current. These binaries, with their unique folded structure, exhibit significant charge and spin currents under illumination. Furthermore, we find that strain engineering can effectively modulate charge/spin currents by influencing charge density distribution and built-in electric field due to the piezoelectric effect. Our research suggests that the piezoelectric binary materials possess enormous and tunable charge/spin currents, underscoring their potential for applications in nonlinear flexible optoelectronics and spintronics.
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Affiliation(s)
- Chengwei Liao
- Department of Physics, South China University of Technology, Guangzhou 510641, China
| | - Minglong Wang
- Department of Physics, South China University of Technology, Guangzhou 510641, China
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou 510641, China
- Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510641, China
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3
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Sun RX, Hu Z, Zhao X, Zha MJ, Zhang J, Chen XD, Liu Z, Tian J. Strain-Prompted Giant Flexo-Photovoltaic Effect in Two-Dimensional Violet Phosphorene Nanosheets. ACS NANO 2024; 18:13298-13307. [PMID: 38727530 DOI: 10.1021/acsnano.4c02821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
As a second-order nonlinear optical phenomenon, the bulk photovoltaic (BPV) effect is expected to break through the Shockley-Queisser limit of thermodynamic photoelectron conversion and improve the energy conversion efficiency of photovoltaic cells. Here, we have successfully induced a strong flexo-photovoltaic (FPV) effect, a form of BPV effect, in strained violet phosphorene nanosheets (VPNS) by utilizing strain engineering at the h-BN nanoedge, which was first observed in nontransition metal dichalcogenide (TMD) systems. This BPV effect was found to originate from the disruption of inversion symmetry induced by uniaxial strain applied to VPNS at the h-BN nanoedge. We have revealed the intricate relationship between the bulk photovoltaic effect and strain gradients in VPNS through thickness-dependent photovoltaic response experiments. A bulk photovoltaic coefficient of up to 1.3 × 10-3 V-1 and a polarization extinction ratio of 21.6 have been achieved by systematically optimizing the height of the h-BN nanoedge and the thickness of VPNS, surpassing those of reported TMD materials (typically less than 3). Our results have revealed the fundamental relationship between the FPV effect and the strain gradients in low-dimensional materials and inspired further exploration of optoelectronic phenomena in strain-gradient engineered materials.
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Affiliation(s)
- Ruo-Xuan Sun
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhen Hu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Xuewen Zhao
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Ming-Jie Zha
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Jinying Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Xu-Dong Chen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhibo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jianguo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
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4
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Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
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Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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5
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Wang W, Xiao Y, Li T, Lu X, Xu N, Cao Y. Piezo-photovoltaic Effect in Monolayer 2H-MoS 2. J Phys Chem Lett 2024; 15:3549-3553. [PMID: 38526184 DOI: 10.1021/acs.jpclett.4c00470] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
Noncentrosymmetric bulk materials effectively convert light energy into electricity by making use of the bulk photovoltaic effect (BPVE). However, whether such an effect persists when reducing the thickness of materials down to atomic-scale remains to be revealed. Here, we show the piezo-photovoltaic effect in atomically thin two-dimensional materials, where the strain-induced polarization can generate photovoltaic outputs in the noncentrosymmetric mono- and few-layer 2H-MoS2 crystals. The photocurrent is enhanced by orders of magnitude when the MoS2 crystals experience an in-plane strain of about 0.2%, with photopower-dependent responsivity up to 0.1 A/W that rivals other state-of-the-art BPVE materials. In addition, studies on the spatial distributions of photocurrents on MoS2 with a controlled number of layers also allow us to disentangle various factors that couple the piezoelectricity and photovoltaics. Therefore, our results also provide insights into the mechanisms of the piezo-photovoltaic effect in two-dimensional materials with thicknesses at the atomic-scale limit.
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Affiliation(s)
- Wei Wang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Yu Xiao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Teng Li
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Xiangchao Lu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Na Xu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Yang Cao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, P. R. China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, P. R. China
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6
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Aftab S, Shehzad MA, Salman Ajmal HM, Kabir F, Iqbal MZ, Al-Kahtani AA. Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe 2. ACS NANO 2023; 17:17884-17896. [PMID: 37656985 DOI: 10.1021/acsnano.3c03593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/03/2023]
Abstract
In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry in piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional (2D) material, MoTe2, caused by the phase transition and broken inversion symmetry in MoTe2. The phase transition from single-crystalline semiconducting 2H-MoTe2 to semimetallic 1T'-MoTe2 was confirmed using X-ray photoelectron spectroscopy (XPS). We used a micrometer-scale system to measure the absorption of energy, which reduced from 800 to 63 meV during phase transformation from hexagonal to distorted octahedral and revealed a smaller bandgap semimetallic behavior. Experimentally, a large bulk photovoltaic response is anticipated with the maximum photovoltage VOC = 16 mV and a positive signal of the ISC = 60 μA (400 nm, 90.4 Wcm-2) in the absence of an external electric field. The maximum values of both R and EQE were found to be 98 mAW-1 and 30%, respectively. Our findings are distinctive features of the photocurrent responses caused by in-plane polarity and its potential from a wide pool of established TMD-based nanomaterials and a cutting-edge approach to optimize the efficiency in converting photons-to-electricity for power harvesting optoelectronics devices.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea
| | - Muhammad Arslan Shehzad
- Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Hafiz Muhammad Salman Ajmal
- Department of Biomedical Engineering, Narowal Campus-University of Engineering and Technology, Lahore 54890, Pakistan
| | - Fahmid Kabir
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa 23640, Pakistan
| | - Abdullah A Al-Kahtani
- Chemistry Department, Collage of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia
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7
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Jiang X, Kang L, Wang J, Huang B. Giant Bulk Electrophotovoltaic Effect in Heteronodal-Line Systems. PHYSICAL REVIEW LETTERS 2023; 130:256902. [PMID: 37418709 DOI: 10.1103/physrevlett.130.256902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Revised: 04/27/2023] [Accepted: 05/30/2023] [Indexed: 07/09/2023]
Abstract
The realization of a giant and continuously tunable second-order photocurrent is desired for many nonlinear optical (NLO) and optoelectronic applications, which remains a great challenge. Here, based on a two-band model, we propose a concept of the bulk electrophotovoltaic effect, that is, an out-of-plane external electric field (E_{ext}) that can continuously tune in-plane shift current along with its sign flip in a heteronodal-line (HNL) system. While strong linear optical transition around the nodal loop may potentially generate giant shift current, an E_{ext} can effectively control the radius of the nodal loop, which can continuously modulate the shift-vector components inside and outside the nodal loop holding opposite signs. This concept has been demonstrated in the HNL HSnN/MoS_{2} system using first-principles calculations. The HSnN/MoS_{2} heterobilayer can not only produce a shift-current conductivity with magnitude that is one to two orders larger than other reported systems, but it can also realize a giant bulk electrophotovoltaic effect. Our finding opens new routes to create and manipulate NLO responses in 2D materials.
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Affiliation(s)
- Xiao Jiang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Lei Kang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
- Beijing Normal University, Beijing 100875, China
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8
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Li CX, Chen C, Zhao L, Ma N. Self-Powered Bipolar Photodetector Based on a Ce-BaTiO 3 PTCR Semiconductor for Logic Gates. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23402-23411. [PMID: 37130006 DOI: 10.1021/acsami.3c01525] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Ferroelectric materials bring new opportunities for self-powdered photodetectors, taking advantage of their anomalous bulk photovoltaic effect. However, ferroelectric-based photodetectors suffer from relatively poor responsivity and detectivity due to obstacles of low electrical conductivity and low photoelectric conversion ability. The present work proposes a strategy based on heterovalent ion Ce-doping into BaTiO3 (Ce-BTO) that gives rise to a good room temperature conductivity combined with a significant PTCR (positive temperature coefficient of resistivity) effect. By utilizing a Ce-BTO PTCR semiconductor, a high-performance self-powered photodetector ITO/Ce-BTO/Ag is fabricated, demonstrating a polarity-switchable photoresponse with the change of wavelength due to the competition between hot electrons induced by the Ag plasmonic effect and electron-hole pairs separated by a Schottky barrier. Moreover, benefiting from the reduced bandgap and the introduced impurity states, good responsivity (9.85 × 10-5 A/W) and detectivity (1.25 × 1010 Jones) as well as fast response/recovery time (83/47 ms) is achieved under 450 nm illumination. Finally, four representative logic gates ("OR", "AND", "NOR", and "NAND") are demonstrated with one photodetector via the bipolar photoresponse. This work opens an avenue to promote the application of PTCR semiconductors in optoelectronics, offering a conceivable means toward high-performance self-powered photodetectors.
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Affiliation(s)
- Chen Xi Li
- CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
- Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics, Science, and Technology, Hebei University, Baoding, Hebei 071002, China
| | - Chen Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Lei Zhao
- Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics, Science, and Technology, Hebei University, Baoding, Hebei 071002, China
| | - Nan Ma
- CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
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9
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You L, Abdelsamie A, Zhou Y, Chang L, Lim ZS, Wang J. Revisiting the Ferroelectric Photovoltaic Properties of Vertical BiFeO 3 Capacitors: A Comprehensive Study. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12070-12077. [PMID: 36825749 DOI: 10.1021/acsami.2c23023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The ferroelectric photovoltaic effect has been extensively studied for possible applications in energy conversion and photo-electrics. The reversible spontaneous polarization gives rise to a switchable photovoltaic behavior. However, despite its long history, the origin of the ferroelectric photovoltaic effect still lacks a full understanding since multiple mechanisms such as bulk and Schottky-barrier-related interface effects are involved. Herein, we report a comprehensive study on the photovoltaic response of BiFeO3-based vertical heterostructures, using multiple strategies to clarify its origin. We found that, under white light illumination, polarization-modulated Schottky barrier at the interface is the dominating mechanism. By varying the top metal contacts, only the photovoltaic effect of the polarization downward state is strongly modulated, suggesting selective interface contribution in different polarization states. A Schottky-barrier-free device shows negligible photovoltaic effect, suggesting the lack of bulk photovoltaic effect in vertical heterostructures under white light illumination.
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Affiliation(s)
- Lu You
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, 1 Shizi Street, Suzhou 215006, China
| | - Amr Abdelsamie
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Yang Zhou
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Lei Chang
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Zhi Shiuh Lim
- Physics Department, National University of Singapore, Block S12, #2 Science Drive 3, 117551 Singapore
| | - Junling Wang
- Department of Physics, Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
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10
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Dong Y, Yang MM, Yoshii M, Matsuoka S, Kitamura S, Hasegawa T, Ogawa N, Morimoto T, Ideue T, Iwasa Y. Giant bulk piezophotovoltaic effect in 3R-MoS 2. NATURE NANOTECHNOLOGY 2023; 18:36-41. [PMID: 36411374 DOI: 10.1038/s41565-022-01252-8] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 10/03/2022] [Indexed: 06/16/2023]
Abstract
Given its innate coupling with wavefunction geometry in solids and its potential to boost the solar energy conversion efficiency, the bulk photovoltaic effect (BPVE) has been of considerable interest in the past decade1-14. Initially discovered and developed in ferroelectric oxide materials2, the BPVE has now been explored in a wide range of emerging materials, such as Weyl semimetals9,10, van der Waals nanomaterials11,12,14, oxide superlattices15, halide perovskites16, organics17, bulk Rashba semiconductors18 and others. However, a feasible experimental approach to optimize the photovoltaic performance is lacking. Here we show that strain-induced polarization can significantly enhance the BPVE in non-centrosymmetric rhombohedral-type MoS2 multilayer flakes (that is, 3R-MoS2). This polarization-enhanced BPVE, termed the piezophotovoltaic effect, exhibits distinctive crystallographic orientation dependence, in that the enhancement mainly manifests in the armchair direction of the 3R-MoS2 lattice while remaining largely intact in the zigzag direction. Moreover, the photocurrent increases by over two orders of magnitude when an in-plane tensile strain of ~0.2% is applied, rivalling that of state-of-the-art materials. This work unravels the potential of strain engineering in boosting the photovoltaic performance, which could potentially promote the exploration of novel photoelectric processes in strained two-dimensional layered materials and their van der Waals heterostructures.
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Affiliation(s)
- Yu Dong
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Ming-Min Yang
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Physics, The University of Warwick, Coventry, UK
| | - Mao Yoshii
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Satoshi Matsuoka
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- Graduate School of Engineering, Nagasaki University, Nagasaki, Japan
| | - Sota Kitamura
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Tatsuo Hasegawa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Naoki Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Takahiro Morimoto
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Toshiya Ideue
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
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11
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Semak S, Kapustianyk V, Eliyashevskyy Y, Bovgyra O, Kovalenko M, Mostovoi U, Doudin B, Kundys B. On the photovoltaic effect asymmetry in ferroelectrics. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:094001. [PMID: 36544427 DOI: 10.1088/1361-648x/aca579] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Accepted: 11/23/2022] [Indexed: 06/17/2023]
Abstract
Despite symmetrical polarization, the magnitude of a light-induced voltage is known to be asymmetric with respect to poling sign in many photovoltaic (PV) ferroelectrics (FEs). This asymmetry remains unclear and is often attributed to extrinsic effects. We show here for the first time that such an asymmetry can be intrinsic, steaming from the superposition of asymmetries of internal FE bias and electro-piezo-strictive deformation. This hypothesis is confirmed by the observed decrease of PV asymmetry for smaller FE bias. Moreover, the both PV effect and remanent polarization are found to increase under vacuum-induced expansion and to decrease for gas-induced compression, with tens percents tunability. The change in cations positions under pressure is analysed through the first-principle density functional theory calculations. The reported properties provide key insight for FE-based solar elements optimization.
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Affiliation(s)
- S Semak
- Faculty of Physics, Ivan Franko National University of Lviv, Dragomanova 50, Lviv, UA79005, Ukraine
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, F-67000 Strasbourg, France
| | - V Kapustianyk
- Faculty of Physics, Ivan Franko National University of Lviv, Dragomanova 50, Lviv, UA79005, Ukraine
| | - Yu Eliyashevskyy
- Faculty of Physics, Ivan Franko National University of Lviv, Dragomanova 50, Lviv, UA79005, Ukraine
| | - O Bovgyra
- Faculty of Physics, Ivan Franko National University of Lviv, Dragomanova 50, Lviv, UA79005, Ukraine
| | - M Kovalenko
- Faculty of Physics, Ivan Franko National University of Lviv, Dragomanova 50, Lviv, UA79005, Ukraine
| | - U Mostovoi
- Faculty of Physics, Ivan Franko National University of Lviv, Dragomanova 50, Lviv, UA79005, Ukraine
| | - B Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, F-67000 Strasbourg, France
| | - B Kundys
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, F-67000 Strasbourg, France
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12
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Kaner NT, Wei Y, Raza A, Li W, Jiang Y, Tian WQ. Colossal In-Plane and Out-of-Plane Shift Photocurrents in Single-Layer Two-Dimensional α-Antimonide Phosphorus. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23348-23354. [PMID: 35575692 DOI: 10.1021/acsami.2c01530] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
For materials lacking inversion symmetries, an interband transition induced by a photon may result in excited electrons (holes) experiencing a spatial shift leading to generation of directional photocurrents. This phenomenon known as bulk photovoltaic effect (BPVE) shift photocurrent (SPC) has recently attracted immense attention owing to its potential in generating photovoltages that are not restricted by Shockley-Queisser limitations imposed by materials' electronic band gaps. The BPVE was recently reformulated in a quantum mechanics viewpoint as the change in the geometrical phase upon photoexcitation and can now be promptly calculated from Bloch wave functions generated by first-principles calculations. The SPC of an electron (hole) is robust against crystal defects and impurities both in the interior and the surface and can be less dissipative and ultrafast. Herein, an emergence of colossal SPC in a pristine two-dimensional (2D) single-layer α-SbP crystal is predicted from first-principles calculations. An external electric field is further applied on the 2D crystal, and a large SPC enhancement is achieved. The locations of the SPC peaks due to both in-plane and out-of-plane responses suggest that α-SbP can generate a large photocurrent both in visible-light and ultraviolet regions. Single-layer 2D α-SbP is thus an excellent material for strong SPC. This finding is thus expected to open a pathway to exploring efficient photovoltaic devices based on monolayer α-SbP and similar materials.
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Affiliation(s)
| | - Yadong Wei
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Technology Innovation Center of Materials and Devices at Extreme Environment, Harbin 150001, China
| | - Ali Raza
- Department of Physics, University of Sialkot (USKT), 1-Km Main Daska Road, Sialkot 51040, Punjab, Pakistan
| | - Weiqi Li
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
- Technology Innovation Center of Materials and Devices at Extreme Environment, Harbin 150001, China
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an 710024, China
| | - YongYuan Jiang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
- Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin 150001, China
- Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Harbin 150001, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Wei Quan Tian
- Chongqing Key Laboratory of Theoretical and Computational Chemistry, School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China
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13
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Kaner NT, Wei Y, Ying T, Xu X, Li W, Raza A, Li X, Yang J, Jiang Y, Tian WQ. Giant Shift Photovoltaic Current in Group V‐V Binary Nanosheets. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202100472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
| | - Yadong Wei
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Tao Ying
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Xiaodong Xu
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Weiqi Li
- School of Physics Harbin Institute of Technology Harbin 150001 China
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Xi'an 710024 China
| | - Ali Raza
- Department of Physics University of Sialkot (USKT) 1‐Km Main Daska Road Sialkot Punjab 51040 Pakistan
| | - Xingji Li
- School of Material Science and Engineering Harbin Institute of Technology Harbin 150001 China
| | - Jianqun Yang
- School of Material Science and Engineering Harbin Institute of Technology Harbin 150001 China
| | - YongYuan Jiang
- School of Physics Harbin Institute of Technology Harbin 150001 China
- Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China
- Key Lab of Micro‐Optics and Photonic Technology of Heilongjiang Province Harbin 150001 China
| | - Wei Quan Tian
- Chongqing Key Laboratory of Theoretical and Computational Chemistry School of Chemistry and Chemical Engineering Chongqing University Chongqing 401331 China
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14
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Meng L, Qu Y, Jing L. Recent advances in BiOBr-based photocatalysts for environmental remediation. CHINESE CHEM LETT 2021. [DOI: 10.1016/j.cclet.2021.03.083] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
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15
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Jiang J, Chen Z, Hu Y, Xiang Y, Zhang L, Wang Y, Wang GC, Shi J. Flexo-photovoltaic effect in MoS 2. NATURE NANOTECHNOLOGY 2021; 16:894-901. [PMID: 34140672 DOI: 10.1038/s41565-021-00919-y] [Citation(s) in RCA: 47] [Impact Index Per Article: 15.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2020] [Accepted: 04/27/2021] [Indexed: 06/12/2023]
Abstract
The theoretical Shockley-Queisser limit of photon-electricity conversion in a conventional p-n junction could be potentially overcome by the bulk photovoltaic effect that uniquely occurs in non-centrosymmetric materials. Using strain-gradient engineering, the flexo-photovoltaic effect, that is, the strain-gradient-induced bulk photovoltaic effect, can be activated in centrosymmetric semiconductors, considerably expanding material choices for future sensing and energy applications. Here we report an experimental demonstration of the flexo-photovoltaic effect in an archetypal two-dimensional material, MoS2, by using a strain-gradient engineering approach based on the structural inhomogeneity and phase transition of a hybrid system consisting of MoS2 and VO2. The experimental bulk photovoltaic coefficient in MoS2 is orders of magnitude higher than that in most non-centrosymmetric materials. Our findings unveil the fundamental relation between the flexo-photovoltaic effect and a strain gradient in low-dimensional materials, which could potentially inspire the exploration of new optoelectronic phenomena in strain-gradient-engineered materials.
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Affiliation(s)
- Jie Jiang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
| | - Zhizhong Chen
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Yang Hu
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Yu Xiang
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Lifu Zhang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Yiping Wang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Gwo-Ching Wang
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Jian Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
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16
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Wang Z, Lin H, Zhang X, Li J, Chen X, Wang S, Gong W, Yan H, Zhao Q, Lv W, Gong X, Xiao Q, Li F, Ji D, Zhang X, Dong H, Li L, Hu W. Revealing molecular conformation-induced stress at embedded interfaces of organic optoelectronic devices by sum frequency generation spectroscopy. SCIENCE ADVANCES 2021; 7:7/16/eabf8555. [PMID: 33853785 PMCID: PMC8050595 DOI: 10.1126/sciadv.abf8555] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2020] [Accepted: 02/25/2021] [Indexed: 05/28/2023]
Abstract
Interface stresses are pervasive and critical in conventional optoelectronic devices and generally lead to many failures and reliability problems. However, detection of the interface stress embedded in organic optoelectronic devices is a long-standing problem, which causes the unknown relationship between interface stress and organic device stability (one key and unsettled issue for practical applications). In this study, a kind of previously unknown molecular conformation-induced stress is revealed at the organic embedded interface through sum frequency generation (SFG) spectroscopy technique. This stress can be greater than 10 kcal/mol per nm2 and is sufficient to induce molecular disorder in the organic semiconductor layer (with energy below 8 kcal/mol per nm2), finally causing instability of the organic transistor. This study not only reveals interface stress in organic devices but also correlates instability of organic devices with the interface stress for the first time, offering an effective solution for improving device stability.
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Affiliation(s)
- Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Hongzhen Lin
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Xi Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jie Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Xiaosong Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Shuguang Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Wenbin Gong
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Hui Yan
- School of Pharmaceutical Sciences, Liaocheng University, Liaocheng 252059, China
| | - Qiang Zhao
- College of Science, Civil Aviation University of China, Tianjin 300300, China
| | - Weibang Lv
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Xue Gong
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Qingbo Xiao
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Fujin Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Xiaotao Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
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17
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Schankler AM, Gao L, Rappe AM. Large Bulk Piezophotovoltaic Effect of Monolayer 2 H-MoS 2. J Phys Chem Lett 2021; 12:1244-1249. [PMID: 33497221 DOI: 10.1021/acs.jpclett.0c03503] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition-metal dichalcogenide MoS2. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer 2H-MoS2 that dramatically enhances the integrated shift current. Using this distortion, we show that overlap in the Brillouin zone of the distributions of the shift vector (a quantity measuring the net displacement in real space of coherent wave packets during excitation) and the transition intensity is crucial for increasing the shift current. The distortion pattern is related to the material polarization and can be realized through an applied electric field via the converse piezoelectric effect. This finding suggests an additional method for engineering the shift current response of materials to augment previously reported methods using mechanical strain.
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Affiliation(s)
- Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Lingyuan Gao
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
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18
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Wei J, Li Y, Wang L, Liao W, Dong B, Xu C, Zhu C, Ang KW, Qiu CW, Lee C. Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection. Nat Commun 2020; 11:6404. [PMID: 33335090 PMCID: PMC7747747 DOI: 10.1038/s41467-020-20115-1] [Citation(s) in RCA: 46] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2020] [Accepted: 11/16/2020] [Indexed: 01/27/2023] Open
Abstract
Bulk photovoltaic effect (BPVE), featuring polarization-dependent uniform photoresponse at zero external bias, holds potential for exceeding the Shockley-Queisser limit in the efficiency of existing opto-electronic devices. However, the implementation of BPVE has been limited to the naturally existing materials with broken inversion symmetry, such as ferroelectrics, which suffer low efficiencies. Here, we propose metasurface-mediated graphene photodetectors with cascaded polarization-sensitive photoresponse under uniform illumination, mimicking an artificial BPVE. With the assistance of non-centrosymmetric metallic nanoantennas, the hot photocarriers in graphene gain a momentum upon their excitation and form a shift current which is nonlocal and directional. Thereafter, we demonstrate zero-bias uncooled mid-infrared photodetectors with three orders higher responsivity than conventional BPVE and a noise equivalent power of 0.12 nW Hz−1/2. Besides, we observe a vectorial photoresponse which allows us to detect the polarization angle of incident light with a single device. Our strategy opens up alternative possibilities for scalable, low-cost, multifunctional infrared photodetectors. Here, graphene-based plasmonic metamaterials are used to generate an artificial bulk photovoltaic effect, enabling the realization of mid-infrared photodetectors with enhanced responsivity and calibration-free polarization detection at room temperature.
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Affiliation(s)
- Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Ying Li
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Lin Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Wugang Liao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Chunxiang Zhu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore. .,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore.
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19
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Pal S, Swain AB, Biswas PP, Murugavel P. Linear bulk photovoltaic effect and phenomenological study in multi-phase co-existing ferroelectric system. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:485701. [PMID: 32750682 DOI: 10.1088/1361-648x/abac23] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2020] [Accepted: 08/04/2020] [Indexed: 06/11/2023]
Abstract
Ferroelectric systems with multi-phase co-existence are found to exhibit anomalous photovoltaic response. In this work, detailed photovoltaic studies are carried out under 405 nm light illumination on Ba1-x(Bi0.5Li0.5)xTiO3ferroelectric oxides having the co-existence of tetragonal and orthorhombic phases. The linear and sinusoidal photocurrent-dependence as a function of light intensity and polarization-direction, respectively elucidate the experimental evidence for linear bulk-photovoltaic effect. Importantly, the temperature-dependent photovoltaic studies display 2-fold enhancement in photovoltage near the ferroelectric transition temperature (TC). The observed features in photovoltage follow inverse temperature-dependence of the photoconductivity. The linear relationship between the calculated bulk-photovoltaic tensor component and the photocurrent established from the proposed phenomenological model is verified through their composition-dependent studies. These studies provide the desired design parameters to engineer the ferroelectric system for better photovoltaic characteristics suitable for device applications.
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Affiliation(s)
- Subhajit Pal
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Atal Bihari Swain
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
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20
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Kaner N, Wei Y, Jiang Y, Li W, Xu X, Pang K, Li X, Yang J, Jiang Y, Zhang G, Tian WQ. Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering. ACS OMEGA 2020; 5:17207-17214. [PMID: 32715206 PMCID: PMC7376894 DOI: 10.1021/acsomega.0c01319] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Accepted: 06/22/2020] [Indexed: 06/11/2023]
Abstract
Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in ferroelectricity, in the present work, the effect of equibiaxial strain on the band structure and shift currents in monolayer two-dimensional (2D) GeS and SnS has systematically been investigated using the first-principles calculations. The conduction bands of those materials are more responsive to strain than the valence bands. Increased equibiaxial compressive strain leads to a drastic reduction in the band gap and finally the occurrence of phase transition from semiconductor to metal at strains of -15 and -14% for GeS and SnS, respectively. On the other hand, tensile equibiaxial strain increases the band gap slightly. Similarly, increased equibiaxial compressive strain leads to a steady almost four times increase in the shift currents at a strain of -12% with direction change occurring at -8% strain. However, at phase transition from semiconductor to metal, the shift currents of the two materials completely vanish. Equibiaxial tensile strain also leads to increased shift currents. For SnS, shift currents do not change direction, just as the case of GeS at low strain; however, at a strain of +8% and beyond, direction reversal of shift currents beyond the band gap in GeS occur.
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Affiliation(s)
| | - Yadong Wei
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yingjie Jiang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Weiqi Li
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Xiaodong Xu
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Kaijuan Pang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Xingji Li
- Materials
Science and Engineering, Harbin Institute
of Technology, Harbin 150001, China
| | - Jianqun Yang
- Materials
Science and Engineering, Harbin Institute
of Technology, Harbin 150001, China
| | - YongYuan Jiang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Guiling Zhang
- School
of Materials Science and Engineering, Harbin
University of Science and Technology, Harbin 150080, China
| | - Wei Quan Tian
- Chongqing
Key Laboratory of Theoretical and Computational Chemistry, College
of Chemistry and Chemical Engineering, Chongqing
University, Huxi Campus, Chongqing 401331, China
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21
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Affiliation(s)
- Ilya Grinberg
- Department of Chemistry Bar Ilan University Ramat Gan Israel
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22
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Wang Q, Zhou C, Chai Y. Breaking symmetry in device design for self-driven 2D material based photodetectors. NANOSCALE 2020; 12:8109-8118. [PMID: 32236235 DOI: 10.1039/d0nr01326a] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The advent of graphene and other two-dimensional (2D) materials offers great potential for optoelectronic applications. Various device structures and novel mechanisms have been proposed to realize photodetectors with unique detecting properties. In this minireview, we focus on a self-driven photodetector that has great potential for low-power or even powerless operation required in the internet of things and wearable electronics. To address the general principle of self-driven properties, we propose and elaborate the concept of symmetry breaking in 2D material based self-driven photodetectors. We discuss various mechanisms of breaking symmetry for self-driven photodetectors, including asymmetrical contact engineering, field-induced asymmetry, PN homojunctions, and PN heterostructures. Typical device examples based on these mechanisms are reviewed and compared. The performance of current self-driven photodetectors is critically assessed and future directions are discussed towards the target application fields.
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Affiliation(s)
- Qi Wang
- South China University of Technology, Guangzhou, China.
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