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Mou Y, Chen H, Liu J, Lan Q, Wang J, Zhang C, Wang Y, Gu J, Zhao T, Jiang X, Shi W, Zhang C. Gate-Tunable Quantum Acoustoelectric Transport in Graphene. NANO LETTERS 2024; 24:4625-4632. [PMID: 38568748 DOI: 10.1021/acs.nanolett.4c00774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Transport probes the motion of quasi-particles in response to external excitations. Apart from the well-known electric and thermoelectric transport, acoustoelectric transport induced by traveling acoustic waves has rarely been explored. Here, by adopting hybrid nanodevices integrated with piezoelectric substrates, we establish a simple design of acoustoelectric transport with gate tunability. We fabricate dual-gated acoustoelectric devices based on hBN-encapsulated graphene on LiNbO3. Longitudinal and transverse acoustoelectric voltages are generated by launching a pulsed surface acoustic wave. The gate dependence of zero-field longitudinal acoustoelectric signal presents strikingly similar profiles to that of Hall resistivity, providing a valid approach for extracting carrier density without magnetic field. In magnetic fields, acoustoelectric quantum oscillations appear due to Landau quantization, which are more robust and pronounced than Shubnikov-de Haas oscillations. Our work demonstrates a feasible acoustoelectric setup with gate tunability, which can be extended to the broad scope of various van der Waals materials.
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Affiliation(s)
- Yicheng Mou
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Haonan Chen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jiaqi Liu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Qing Lan
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jiayu Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Chuanxin Zhang
- Department of Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Yuxiang Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jiaming Gu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Tuoyu Zhao
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Xue Jiang
- Department of Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Wu Shi
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
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2
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Lyons TP, Puebla J, Yamamoto K, Deacon RS, Hwang Y, Ishibashi K, Maekawa S, Otani Y. Acoustically Driven Magnon-Phonon Coupling in a Layered Antiferromagnet. PHYSICAL REVIEW LETTERS 2023; 131:196701. [PMID: 38000412 DOI: 10.1103/physrevlett.131.196701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Accepted: 09/25/2023] [Indexed: 11/26/2023]
Abstract
Harnessing the causal relationships between mechanical and magnetic properties of Van der Waals materials presents a wealth of untapped opportunity for scientific and technological advancement, from precision sensing to novel memories. This can, however, only be exploited if the means exist to efficiently interface with the magnetoelastic interaction. Here, we demonstrate acoustically driven spin-wave resonance in a crystalline antiferromagnet, chromium trichloride, via surface acoustic wave irradiation. The resulting magnon-phonon coupling is found to depend strongly on sample temperature and external magnetic field orientation, and displays a high sensitivity to extremely weak magnetic anisotropy fields in the few mT range. Our work demonstrates a natural pairing between power-efficient strain-wave technology and the excellent mechanical properties of Van der Waals materials, representing a foothold toward widespread future adoption of dynamic magnetoacoustics.
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Affiliation(s)
- Thomas P Lyons
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - Jorge Puebla
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - Kei Yamamoto
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
| | - Russell S Deacon
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Advanced Device Laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - Yunyoung Hwang
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Koji Ishibashi
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Advanced Device Laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - Sadamichi Maekawa
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
- Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yoshichika Otani
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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3
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Guerreiro AN, Costa IB, Vale AB, Braga MH. Distinctive Electric Properties of Group 14 Oxides: SiO 2, SiO, and SnO 2. Int J Mol Sci 2023; 24:15985. [PMID: 37958967 PMCID: PMC10649876 DOI: 10.3390/ijms242115985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2023] [Revised: 11/01/2023] [Accepted: 11/02/2023] [Indexed: 11/15/2023] Open
Abstract
The oxides of group 14 have been widely used in numerous applications in glass, ceramics, optics, pharmaceuticals, and food industries and semiconductors, photovoltaics, thermoelectrics, sensors, and energy storage, namely, batteries. Herein, we simulate and experimentally determine by scanning kelvin probe (SKP) the work functions of three oxides, SiO2, SiO, and SnO2, which were found to be very similar. Electrical properties such as electronic band structure, electron localization function, and carrier mobility were also simulated for the three crystalline oxides, amorphous SiO, and surfaces. The most exciting results were obtained for SiO and seem to show Poole-Frankel emissions or trap-assisted tunneling and propagation of surface plasmon polariton (SPP) with nucleation of solitons on the surface of the Aluminum. These phenomena and proposed models may also describe other oxide-metal heterojunctions and plasmonic and metamaterials devices. The SiO2 was demonstrated to be a stable insulator interacting less with the metals composing the cell than SnO2 and much less than SiO, configuring a typical Cu/SiO2/Al cell potential well. Its surface charge carrier mobility is small, as expected for an insulator. The highest charge carrier mobility at the lowest conduction band energy is the SnO2's and the most symmetrical the SiO's with a similar number of electron holes at the conduction and valence bands, respectively. The SnO2 shows it may perform as an n-type semiconductor.
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Affiliation(s)
- Antonio Nuno Guerreiro
- Engineering Physics Department, Engineering Faculty, University of Porto, 4200-465 Porto, Portugal;
- MatER—Materials for Energy Research Laboratory, Engineering Faculty, University of Porto, 4200-465 Porto, Portugal; (I.B.C.); (A.B.V.)
| | - Ilidio B. Costa
- MatER—Materials for Energy Research Laboratory, Engineering Faculty, University of Porto, 4200-465 Porto, Portugal; (I.B.C.); (A.B.V.)
- Metallurgical and Materials Engineering Department, Engineering Faculty, University of Porto, 4200-465 Porto, Portugal
| | - Antonio B. Vale
- MatER—Materials for Energy Research Laboratory, Engineering Faculty, University of Porto, 4200-465 Porto, Portugal; (I.B.C.); (A.B.V.)
- Metallurgical and Materials Engineering Department, Engineering Faculty, University of Porto, 4200-465 Porto, Portugal
| | - Maria Helena Braga
- Engineering Physics Department, Engineering Faculty, University of Porto, 4200-465 Porto, Portugal;
- MatER—Materials for Energy Research Laboratory, Engineering Faculty, University of Porto, 4200-465 Porto, Portugal; (I.B.C.); (A.B.V.)
- LAETA—INEGI, Institute of Science and Innovation in Mechanical and Industrial Engineering, 4200-465 Porto, Portugal
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Ma L, Wang X, Wang H, Wang X, Zou G, Guan Y, Guo S, Li H, Chen Q, Kang L, Zhang L, Wu P. van der Waals Self-Epitaxial Growth of Inch-Sized Superconducting Niobium Diselenide Films. NANO LETTERS 2023; 23:6892-6899. [PMID: 37470724 DOI: 10.1021/acs.nanolett.3c01283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Ultrathin superconducting films are the basis of superconductor devices. van der Waals (vdW) NbSe2 with noncentrosymmetry exhibits exotic superconductivity and shows promise in superconductor electronic devices. However, the growth of inch-scale NbSe2 films with layer regulation remains a challenge because vdW structural material growth is strongly dependent on the epitaxial guidance of the substrate. Herein, a vdW self-epitaxy strategy is developed to eliminate the substrate driving force in film growth and realize inch-sized NbSe2 film growth with thicknesses from 2.1 to 12.1 nm on arbitrary substrates. The superconducting transition temperature of 5.1 K and superconducting transition width of 0.30 K prove the top homogeneity and quality of superconductivity among all of the synthetic NbSe2 films. Coupled with a large area and substrate compatibility, this work paves the way for developing NbSe2 superconductor electronics.
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Affiliation(s)
- Liang Ma
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Xiaohan Wang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Hao Wang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
| | - Xiangyi Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Yanqiu Guan
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Shuya Guo
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Haochen Li
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Qi Chen
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Lin Kang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Labao Zhang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Peiheng Wu
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
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5
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Wang X, Wang H, Ma L, Zhang L, Yang Z, Dong D, Chen X, Li H, Guan Y, Zhang B, Chen Q, Shi L, Li H, Qin Z, Tu X, Zhang L, Jia X, Chen J, Kang L, Wu P. Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits. Nat Commun 2023; 14:4282. [PMID: 37463894 DOI: 10.1038/s41467-023-39997-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Accepted: 07/07/2023] [Indexed: 07/20/2023] Open
Abstract
Superconducting nanocircuits, which are usually fabricated from superconductor films, are the core of superconducting electronic devices. While emerging transition-metal dichalcogenide superconductors (TMDSCs) with exotic properties show promise for exploiting new superconducting mechanisms and applications, their environmental instability leads to a substantial challenge for the nondestructive preparation of TMDSC nanocircuits. Here, we report a universal strategy to fabricate TMDSC nanopatterns via a topotactic conversion method using prepatterned metals as precursors. Typically, robust NbSe2 meandering nanowires can be controllably manufactured on a wafer scale, by which a superconducting nanowire circuit is principally demonstrated toward potential single photon detection. Moreover, versatile superconducting nanocircuits, e.g., periodical circle/triangle hole arrays and spiral nanowires, can be prepared with selected TMD materials (NbS2, TiSe2, or MoTe2). This work provides a generic approach for fabricating nondestructive TMDSC nanocircuits with precise control, which paves the way for the application of TMDSCs in future electronics.
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Affiliation(s)
- Xiaohan Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Hao Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
| | - Liang Ma
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Labao Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
| | - Zhuolin Yang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Daxing Dong
- Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Xi Chen
- Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Haochen Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Yanqiu Guan
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Biao Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Qi Chen
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lili Shi
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Hui Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Zhi Qin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Xuecou Tu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lijian Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Xiaoqing Jia
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
- Hefei National Laboratory, Hefei, 230088, China
| | - Jian Chen
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lin Kang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
- Hefei National Laboratory, Hefei, 230088, China
| | - Peiheng Wu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
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6
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Fang Y, Xu Y, Kang K, Davaji B, Watanabe K, Taniguchi T, Lal A, Mak KF, Shan J, Ramshaw BJ. Quantum Oscillations in Graphene Using Surface Acoustic Wave Resonators. PHYSICAL REVIEW LETTERS 2023; 130:246201. [PMID: 37390413 DOI: 10.1103/physrevlett.130.246201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Accepted: 05/26/2023] [Indexed: 07/02/2023]
Abstract
Surface acoustic waves (SAWs) provide a contactless method for measuring wave-vector-dependent conductivity. This technique has been used to discover emergent length scales in the fractional quantum Hall regime of traditional, semiconductor-based heterostructures. SAWs would appear to be an ideal match for van der Waals heterostructures, but the right combination of substrate and experimental geometry to allow access to the quantum transport regime has not yet been found. We demonstrate that SAW resonant cavities fabricated on LiNbO_{3} substrates can be used to access the quantum Hall regime of high-mobility, hexagonal boron nitride encapsulated, graphene heterostructures. Our work establishes SAW resonant cavities as a viable platform for performing contactless conductivity measurements in the quantum transport regime of van der Waals materials.
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Affiliation(s)
- Yawen Fang
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - Yang Xu
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Kaifei Kang
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - Benyamin Davaji
- Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba 305-0044, Japan
| | | | - Amit Lal
- Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
| | - Kin Fai Mak
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - Jie Shan
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - B J Ramshaw
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
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7
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Nie X, Wu X, Wang Y, Ban S, Lei Z, Yi J, Liu Y, Liu Y. Surface acoustic wave induced phenomena in two-dimensional materials. NANOSCALE HORIZONS 2023; 8:158-175. [PMID: 36448884 DOI: 10.1039/d2nh00458e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Surface acoustic wave (SAW)-matter interaction provides a fascinating key for inducing and manipulating novel phenomena and functionalities in two-dimensional (2D) materials. The dynamic strain field and piezo-electric field associated with propagating SAWs determine the coherent manipulation and transduction between 2D excitons and phonons. Over the past decade, many intriguing acoustic-induced effects, including the acousto-electric effect, acousto-galvanic effect, acoustic Stark effect, acoustic Hall effect and acoustic exciton transport, have been reported experimentally. However, many more phenomena, such as the valley acousto-electric effect, valley acousto-electric Hall effect and acoustic spin Hall effect, were only theoretically proposed, the experimental verification of which are yet to be achieved. In this minireview, we attempt to overview the recent breakthrough of SAW-induced phenomena covering acoustic charge transport, acoustic exciton transport and modulation, and coherent acoustic phonons. Perspectives on the opportunities of the proposed SAW-induced phenomena, as well as open experimental challenges, are also discussed, attempting to offer some guidelines for experimentalists and theorists to explore the desired exotic properties and boost practical applications of 2D materials.
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Affiliation(s)
- Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
| | - Xiaoyue Wu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
| | - Yang Wang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
| | - Siyuan Ban
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
| | - Zhihao Lei
- Global Innovative Centre for Advanced Nanomaterials, College of Engineering, Science and Environment, The University of Newcastle, NSW, 2308, Australia
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, College of Engineering, Science and Environment, The University of Newcastle, NSW, 2308, Australia
| | - Ying Liu
- College of Jincheng, Nanjing University of Aeronautics and Astronautics, Nanjing 211156, China.
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
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8
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Parashar M, Bathla A, Shishir D, Gokhale A, Bandyopadhyay S, Saha K. Sub-second temporal magnetic field microscopy using quantum defects in diamond. Sci Rep 2022; 12:8743. [PMID: 35610314 PMCID: PMC9130321 DOI: 10.1038/s41598-022-12609-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Accepted: 05/05/2022] [Indexed: 11/09/2022] Open
Abstract
Wide field-of-view magnetic field microscopy has been realised by probing shifts in optically detected magnetic resonance (ODMR) spectrum of Nitrogen Vacancy (NV) defect centers in diamond. However, these widefield diamond NV magnetometers require few to several minutes of acquisition to get a single magnetic field image, rendering the technique temporally static in it's current form. This limitation prevents application of diamond NV magnetometers to novel imaging of dynamically varying microscale magnetic field processes. Here, we show that the magnetic field imaging frame rate can be significantly enhanced by performing lock-in detection of NV photo-luminescence (PL), simultaneously over multiple pixels of a lock-in camera. A detailed protocol for synchronization of frequency modulated PL of NV centers with fast camera frame demodulation, at few kilohertz frequencies, has been experimentally demonstrated. This experimental technique allows magnetic field imaging of sub-second varying microscale currents in planar microcoils with imaging frame rates in the range of 50-200 frames per s (fps). Our work demonstrates that widefield per-pixel lock-in detection of frequency modulated NV ODMR enables dynamic magnetic field microscopy.
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Affiliation(s)
- Madhur Parashar
- Information Processing Laboratory, Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal, 721302, India. .,School of Medical Science and Technology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal, 721302, India.
| | - Anuj Bathla
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra, 400076, India.,Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai, Maharashtra, 400076, India
| | - Dasika Shishir
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra, 400076, India
| | - Alok Gokhale
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra, 400076, India
| | - Sharba Bandyopadhyay
- Information Processing Laboratory, Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal, 721302, India
| | - Kasturi Saha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra, 400076, India.
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9
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Datta K, Li Z, Lyu Z, Deotare PB. Piezoelectric Modulation of Excitonic Properties in Monolayer WSe 2 under Strong Dielectric Screening. ACS NANO 2021; 15:12334-12341. [PMID: 34181857 DOI: 10.1021/acsnano.1c04269] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We investigate the interaction of excitons in monolayer WSe2 with the piezoelectric field of surface acoustic wave (SAW) at room temperature using photoluminescence (PL) spectroscopy and report a large in-plane exciton polarizability of 8.43 ± 0.18 × 10-6 Dm/V. Such large polarizability arises due to the strong dielectric screening from the piezoelectric substrate. In addition, we show that the exciton-piezoelectric field interaction and population distribution between neutral excitons and trions can be optically manipulated by controlling the field screening using photogenerated free carriers. Finally, we model the broadening of the exciton PL line width and report that the interaction is dominated by type-II band edge modulation, because of the in-plane electric field in the system. The results help understand the interaction of excitons in monolayer transition-metal dichalcogenides that will aid in controlled manipulation of excitonic properties for applications in sensing, detection, and on-chip communication.
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Affiliation(s)
- Kanak Datta
- Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Zidong Li
- Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Zhengyang Lyu
- Applied Physics Program, University of Michigan Ann Arbor, Michigan 48109, United States
| | - Parag B Deotare
- Applied Physics Program, University of Michigan Ann Arbor, Michigan 48109, United States
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